TW200810141A - Light-light conversion device - Google Patents

Light-light conversion device Download PDF

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TW200810141A
TW200810141A TW096120633A TW96120633A TW200810141A TW 200810141 A TW200810141 A TW 200810141A TW 096120633 A TW096120633 A TW 096120633A TW 96120633 A TW96120633 A TW 96120633A TW 200810141 A TW200810141 A TW 200810141A
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Taiwan
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light
optical
conversion device
electrode
layer
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TW096120633A
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Chinese (zh)
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Shin-Ya Tanaka
Shinichi Morishima
Masaaki Yokoyama
Kenichi Nakayama
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Sumitomo Chemical Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/141—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being without a potential-jump barrier or surface barrier
    • H01L31/143—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being without a potential-jump barrier or surface barrier the light source being a semiconductor device with at least one potential-jump barrier or surface barrier, e.g. light emitting diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/145—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being characterised by at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/901—Assemblies of multiple devices comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

To provide a layered light-to-light conversion device having an intermediate electrode inserted between a light reception unit and a light emission unit and having a high spatial resolution. An intermediate electrode is arranged between a light reception unit formed by a photo current amplification element and a light emission unit formed by an organic EL layer. The intermediate electrode is electrically isolated. Thus, it is possible to obtain a light-to-light conversion device having a high light-to-light conversion efficiency and an excellent spatial resolution.

Description

200810141 (1) 九、發明說明 【發明所屬之技術領域】 本發明係有關光-光轉換裝置，尤其有關在受光部與 發光部之間具有中間電極的光一光轉換裝置。 * 【先前技術】 先前，報告有若使金屬層接觸特定之有機半導體，在 Φ 施加有電壓之狀態下對上述半導體與金屬層之接觸部照射 光線，則會觀測到比入射光子數量更高數量之電子造成的 光電流，所謂光電流倍增現象（非專利文件1，專利文件 η 。這是一種光照射造成與金屬層之邊界面附近的有機 半導體會蓄積電洞，此電洞所形成之高電場造成大量電子 從金屬層穿隧注入有機半導體的現象。 使用此種現象之有機半導體與金屬層的組合，在本發 明書中稱爲「光電流倍增元件」。 Φ 有關此光電流倍增元件中之有機半導體材料的製造方 法，除了依靠有機顏料或低分子化合物之真空蒸鍍來成膜 _ 之外，也報告有將顯示上述光電流倍增現象之有機半導體 _ 材料分散於樹脂中，使光電流倍增元件大面積化，且容易 製造的方法（專利文件2);或是以只有在照射兩道光線 時才會引起光電流倍增現象之方式，在絕緣體層兩側配置 光電流倍增層的構造（專利文件3)。 將此光電流倍增元件與包含觀察到有機電場發光現象 (有機EL現象）之有機電場發光體的發光層，加以層積 -5- 200810141BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical-to-optical conversion device, and more particularly to an optical-to-optical conversion device having an intermediate electrode between a light-receiving portion and a light-emitting portion. * [Prior Art] Previously, it was reported that if a metal layer was brought into contact with a specific organic semiconductor, the contact portion of the semiconductor and the metal layer was irradiated with light at a voltage of Φ, and a higher number of incident photons was observed. The photocurrent caused by the electrons, the so-called photocurrent multiplication phenomenon (Non-Patent Document 1, Patent Document η. This is a kind of light that causes an organic semiconductor near the boundary surface of the metal layer to accumulate holes, and the hole is formed. The electric field causes a phenomenon in which a large amount of electrons are tunneled into the organic semiconductor from the metal layer. The combination of the organic semiconductor and the metal layer using this phenomenon is referred to as "photocurrent multiplication element" in the present invention. Φ About this photocurrent multiplication element In the method of producing an organic semiconductor material, in addition to vacuum deposition by an organic pigment or a low molecular compound to form a film, an organic semiconductor material exhibiting the photocurrent multiplication phenomenon is also dispersed in a resin to cause photocurrent. Multiplying components that are large in area and easy to manufacture (Patent Document 2); or The structure of the photocurrent multiplication layer is disposed on both sides of the insulator layer in the manner of the light ray multiplication phenomenon (Patent Document 3). The photocurrent multiplication element and the observed organic electric field luminescence phenomenon (organic EL phenomenon) The luminescent layer of the organic electric field illuminator is laminated -5 - 200810141

的光-光轉換裝置也已經被報告出來（例如非專利文件2 )。第5圖表示其構造例。第5圖中符號12爲光電流倍 增層，13爲配置於光入射側之第1電極，14爲發光層， 1 5爲電洞輸送層，1 8爲照射於光電流倍增層之入射光， 1 9爲出射光。又，1 6爲玻璃基板，於其上設置另一邊之 電極。此種構造中，藉由對光電流倍增層1 2照射入射光 ，光電流倍增現象所造成之電子會從第1電極注入到光電 流倍增層1 2，到達發光層14。藉此發光層1 4會發光，得 到出射光1 9。另外電洞輸送層1 5，係針對發光層1 4，提 供發光之際用來與電子結合的電洞。 此光-光轉換裝置中，可得到增幅光線之效果與轉換 波長之效果。前者之光增幅效果，係有比入射光子數量更 多之電子因爲光電流倍增效果而注入有機EL層，因有機 EL層之發光而放出之光子數量比射入光電流倍增層之光 子數量更多。後者之波長轉換效果，係因爲有機EL層所 發光之光線波長，無關於入射光波長而相關於有機EL層 的材料。 做爲光-光轉換裝置之構造，也已經知道有將光倍增 元件與有機EL元件並排放置於同一塊基板上的元件，或 加以層積的元件（非專利文件3 )。更且層積此等之情況 下，爲了遮蔽入射光之目的或提高特性，也已知有於光-光轉換部分與發光部分之黏接部插入中間電極（專利文件 4 ) 〇 然而使用中間電極之情況下，有機EL元件會全面發 -6- 200810141 (3) 光，而被指出其空間解能會消失。 專利文件1 日本特開2002-34 1 395號公報 專利文件2 日本特開2002-76430號公報 專利文件3 日本特開2002-1 00797號公報 專利文件4 日本特開2 0 0 0 - 9 1 6 2 3號公報 非專利文件 1 M. Hiramoto，T. Imahigasi Yokoyama ： Applied Physics Letters, Vol. 64 1 87 ( φ 非專利文件2 「應用物理」Vol· 64 ( 1 995 ) 非專利文件3 日本第49次應用物理學會哥 會演講草稿集28p-M-l〇 【發明內容】 發明所欲解決之課題 本發明之目的，係針對具有插入在受光部與 間之中間電極的層積型光-光轉換裝置，提供一 局空間分解能的光一光轉換裝置。 本發明者等，爲了解決上述課題而精心檢討 完成了本發明。亦即本發明係提供一種光一光轉 其於同一塊基板上，在藉由光照射而引起光電流 之具有包含光導電性有機半導體之層的受光部， 流注入而發光之具有包含有機電場發光體之層的 間，具有電氣分離的中間電極。 用以解決課題之手段 and Μ 1 994 ) ，1036 合演講 光部之 具有較 結果， 裝置， 增現象 藉由電 光部之 -7- 200810141 (4) 然後爲了達成上述目的，本發明係做爲一種光-光轉 換裝置，其特徵係層積有：射入有來自外部之光的第1電 極，和將射入上述第1電極之上述光轉換爲電氣的受光部 ，和藉由上述受光部中所轉換之電氣來發光的發光部，和 ' 設置於上述發光部中與上述受光部相反側的第2電極；而 ‘ 且上述受光部與上述發光部之間設置有中間電極，該中間 電極係被分隔爲電氣分離之複數胞。 φ 上述光-光轉換裝置中，上述中間電極之複數胞中最 大胞的面積，可以第1電極及第2電極中較小一方的電極 面積以下。 本發明之光一光轉換裝置，藉由將中間電極作電氣分 離，各個中間電極中只有受光了入射光之部分會得到來自 有機EL元件的發光，故針對對應中間電極圖案之EL元 件的發光，可以達成空間分解能。更且本發明之光-光轉 換裝置，藉由插入中間電極，從發光部所得到之發光會被 φ 中間電極反射，而不會被受光部再次吸收，故具有較高光 -光轉換效率。又，本發明之光-光轉換裝置係在中間電 極之複數胞之間層積具有使光散射之功能的層，藉此不只 可以抑制從胞彼此之間所洩漏之入射光，即使對於微弱入 射光也更容易以受光部檢測出來，進而可高效率地將來自 發光部之發光取出到外部，故可達成更高的光-光轉換效 率。更且本發明之光-光轉換裝置，藉由將具有選擇入射 光與EL發光之波長之功能的層，靠近或碰觸於受光部、 發光部，可實現一倂具有波長分解能的裝置，故可理想使 -8 - 200810141 (5) 用爲將光-光轉換裝置配列爲矩陣狀的顯示器 發明之光-光轉換裝置配置爲矩陣狀者。另外 器裝置），或是影像增輝器、光增幅元件、光 測器、可撓性薄片顯示器裝置（例如將本發明 換裝置使用於有可撓性之基板上面者）。 本發明之上述目的及優點會參考附加圖示 據以下實施例應可更加了解。 【實施方式】 以下詳細說明本發明。本說明書中，將「 「電洞」。 (實施方式1 ) 第6圖係本發明之第1實施方式中，表示 裝置其基本構造之一例的剖面圖。此實施方式 換裝置，係層積有：設置在玻璃等材質所構成 1表面上的第1電極2，和形成在第1電極2 送層6，和對於電洞輸送層6與第1電極2形 的發光層5，和對發光層5與電洞輸送層6形 的中間電極4，和對中間電極4與發光層5形 並將入射到裝置之光線轉換爲電氣的受光部3 光部3設置於與中間電極4相反側的第2電極 方式中，第1電極2、第2電極7 —般係使用 、金屬硫化物或金屬等最少一種或此等所組合 (例如將本 也稱爲顯示 開關、光感 之光-光轉 來說明。依 hole」稱爲 光-光轉換 之光-光轉 之基底基板 上的電洞輸 成於相反側 成於相反側 成於相反側 ，和對於受 7。此實施 金屬氧化物 而成的材質 -9- (6) (6)200810141 。上述受光部3 ’ 一般係藉由光照射而引起光電流倍增現 象者。又，發光層5與電洞輸送層6係構成發光部10。又 ，設置於受光部3與發光層5之間的中間電極4，係被分 隔爲電氣分離的複數胞。在此’上述中間電極一般係以金 屬層所構成。 第2圖係表示中間電極4被分隔爲複數胞之一例的俯 視圖。此例子中，藉由將方形狀之胞22配置爲複數矩陣 狀而構成中間電極4。 本發明之光-光轉換裝置中，即使上述中間電極之複 數胞的個別尺寸不同亦可’但是就空間分解能提升及光一 光轉換效率提升的觀點來看，最大之胞面積，以第1電極 及第2電極中較小一方的電極面積以下爲佳，又對於第1 電極及第2電極中較小一方的電極面積，以50%以下（尤 其10%以下）更佳；一般來說，下限爲0.000025%。此時 藉由適當調整胞之尺寸與胞之間隔’不只可以提高空間分 解能、光-光轉換效率，還可以抑制從胞彼此之間洩漏出 來之入射光，改善入射光與出射光的對比。上述胞尺寸雖 無特別限定，但是就空間分解能提高之觀點來看，胞直徑 以5mm以下爲佳，1mm以下更佳，下限通常爲Ιμιη，理 想爲1 Ομιη。又，相鄰胞彼此之間的間隔雖無特別限定， 但是就入射光之透過造成與出射光之對比的觀點來看，胞 間隔以1 mm以下爲佳，μπι以下更佳，下限通常爲 1 μπι，理想爲 5 μπι。 上述光一光轉換裝置中，中間電極4可圖案化爲任意 -10- 200810141 (7) 形狀。若進行此種圖案化，則無關於入射光而於中間電極 4流動有光電轉換後之電流的情況下，會符合中間電極4 之形狀而從發光部1 0照射輸出光。做爲圖案之形狀，可 以舉出圓形、橢圓形、矩形（亦即正方形、長方形）、菱 形、蜂巢形等，而就提高本發明之光-光轉換裝置之空間 分解能的觀點來看，以能夠提高中間電極之像素密度的矩 形、蜂巢形、菱形爲佳，而蜂巢形尤其理想。此等形狀亦 φ 包含稍微歪曲者或有凹凸者。 上述光一光轉換裝置中構成中間電極4的胞22，可以 配置爲點矩陣狀，而當入射光之路徑在點上時，只有該點 範圍正上方之發光部10的部分會發光。從而配合入射光 之圖案形狀之中間電極4的點才會發光，而可重現入射光 的圖案形狀。又，也可將中間電極4之點的尺寸縮小，藉 由提高密度來提高空間分解能（解析度），使入射光之圖 案的重現性更加提高。又，也可覆蓋構成中間電極4之胞 φ 22的各胞彼此之間（依據情況可以是各個胞之外邊部、及 該胞彼此之間），來層積具有使光散射之功能的層（參考 第7圖）。藉由採取該構造，不只可以抑制從胞彼此之間 所洩漏之入射光，即使對於微弱入射光也更容易以受光部 3檢測出來，進而可高效率地將來自發光部1 〇之發光取出 到外部，故可達成更高的光-光轉換效率。 上述受光部、發光部中最少一方含有高分子，就元件 製作處理之觀點，或是因爲可提高受光部、發光部與中間 電極之界面的密合性，而就元件生產率之觀點來看都較理 -11 - (8) (8)200810141 想。 (實施方式2 ) 第3圖係表示本發明第2實施方式中光一光轉換裝置 之基本構造的剖面圖。此實施方式之光-光轉換裝置，與 上述第1實施方式之光一光轉換裝置具有基本上相同的構 造。與第1實施方式的不同點，係具有波長選擇層8，其 具有選擇入射光、出射光之波長（顏色）的功能。藉由此 波長選擇層8，來提高波長分解能。 接近或碰觸上述受光部3來設置具有選擇入射光波長 之功能的層時，可達成對入射光的波長選擇。例如使用僅 選擇性透過綠色之波長選擇層的情況下，就只有在射入綠 色光時，才可得到出射光。 又，接近或碰觸上述發光部1〇來設置具有選擇出射 光波長之功能的層時，可達成對出射光的波長選擇。例如 使用僅選擇性透過綠色之波長選擇層的情況下，就只有來 自發光部10之發光爲綠色時，才可得到出射光。 更且，上述具有選擇入射光波長之功能的層，可以分 別接近或碰觸上述受光部3與上述發光部10雙方來設置 〇 又，此波長選擇層8也與中間電極4之情況一樣可以 圖案化。此時，在被圖案化之中間電極4的兩側或最少一 邊側，對準受光部3側及發光部1 〇側中波長選擇層8之 圖案座標，加以層積即可。又，將位於相同座標位置之受 -12- (9) (9)200810141 光部3側與發光部1 0側中被波長選擇的波長（顏色）做 爲相同者，將相當於RGB各色之像素作規則配列即可。 此時，例如輸入光爲全彩畫像，則可以從發光部1〇輸出 與配合中間電極4之解析度之輸入光相似的全彩畫像，故 可製作一倂具有空間分解能與波長分解能的光-光轉換裝 置° 藉由設置波長選擇層8，射入受光部3之光線中只有 被波長選擇層8所選擇的光線，會被取入受光部3。例如 上述彩色濾光片爲紅色、藍色、綠色等三色作相同配列者 ;該彩色濾光片之面內，各色像素之位置與中間電極4之 胞位置一致的情況下，紅色、藍色、綠色之混合光若做爲 入射光照射於該彩色濾光片，則透過該彩色濾光片之光線 只會被波長分解爲所透過之彩色濾光片的像素顏色，以對 應入射光各色之光強度的強度，被取入受光部3。本發明 之光-光轉換裝置的光增幅功能，係相關於入射到受光部 3之光的強度，故從發光部1 0出射之光線的強度也會同步 變化。 上述波長選擇層8，係由彩色濾光片、千擾濾光片、 無機螢光體、有機螢光體、微共振器、稜鏡、繞射光柵等 所構成。此時，被波長選擇層8所選擇之波長並無特別限 制，但是以紅外線、可見光、近紫外線範圍等爲佳。 更且，將受光部3接近或碰觸中間電極4來設置時， 做爲受光部3可以將吸收波長不同之材料加以圖案化而層 積。此時，受光部3也具有波長選擇層的功能。 -13- 200810141 (10) 又，做爲發光部1 ο，也可在中間電極4中與受光部3 的相反側，將發光顏色不同之材料加以圖案化而層積。此 時，發光部1 〇也具有波長選擇層的功能。 (實施方式3) 第1圖係表示本發明之第3實施方式中光一光轉換裝 置之基本構造的剖面圖。此實施方式中之光-光轉換裝置 φ ，與上述第1實施方式之光-光轉換裝置具有基本上相同 的構造。與第1實施方式的不同點，係受光部3與發光部 1 〇相反。此時，從外部對第1電極、第2電極施加的電壓 極性也必須相反。 (其他實施方式） 做爲本發明之其他實施方式，可舉出將上述光-光轉 換裝置在同一塊基板上設置2個以上，最少一部份裝置之 發光部之發光色與其他裝置之發光部之發光色不同的構造 。此實施方式，只要將光-光轉換裝置多數並排配置就可 以構築大型裝置，就裝置製作處理的觀點來說較理想。 其次，說明構成本發明之光-光轉換裝置之中各功能 部的材質（材料）。 本發明之光-光轉換裝置中，做爲基底基板1，只要 在形成此等電極及層之際不會變化者即可，可例舉出玻璃 、塑膠、高分子薄膜、矽基板等。此基板爲不透明時，對 發光部1 〇位於與該基底基板1相反側的電極，以透明或 -14- (11) 200810141 半透明者爲佳。 本發明之光-光轉換裝置中，做爲接近或接觸基底基 板1之第1電極2，或是在與第1電極2之間挾持受光部 3及發光部10的第2電極7，可以適當利用透明或半透明 而透過率較高，或是電氣傳導度較高之金屬氧化物、金屬 硫化物、金屬的薄膜，並依據所使用之有機層來適當選擇 使用。具體來說係使用氧化銦、氧化鋅、氧化錫，及該等 φ 之複合體亦即銦錫氧化物（ITO )、銦鋅氧化物等所構成 之導電性玻璃來製作的膜（NESA等）；或是使用金、白 金、銀、銅等，而以ITO、銦鋅氧化物、氧化錫爲佳。做 爲製作方法，可舉出真空蒸鍍法、濺鍍法、離子塗佈法、 鍍法等。 第1電極2及第2電極7之膜厚，係可考慮光之透過 性與電氣傳導度來適當選擇，例如爲1 Onm〜1 Ομπι，理想爲 2 0 n m〜1 μ m，更理想爲5 0 n m〜500nm。 〔有機EL層之說明〕 . 本發明之光-光轉換裝置中工作爲發光部10之有機 E L層，係例舉有用於低分子型有機E L元件之電荷輸送材 料或發光材料，或是有用於高分子型有機EL元件之高分 子發光材料。做爲發光色，除了紅、藍、綠三原色的發光 之外，也力舉有中間色或白色發光。 做爲低分子型有機E L元件用的材料，係使用「有機 EL顯不器」（時任靜夫、安達千波矢、村田英幸合著 -15- (12) 200810141 16年刊物第1版第1刷發 頁，1〇1頁〜120頁所記載之螢 送材料、電子阻擋材料、電洞 並以真空蒸鍍法等製造方法來 曰本OHM有限公司 平成 行）17頁〜48頁，83頁〜99 光或燐光發光材料、電洞輸 阻擋材料、電子輸送材料，A light-to-light conversion device has also been reported (for example, Non-Patent Document 2). Fig. 5 shows a structural example thereof. In Fig. 5, reference numeral 12 is a photocurrent multiplication layer, 13 is a first electrode disposed on the light incident side, 14 is a light emitting layer, 15 is a hole transport layer, and 18 is incident light irradiated to the photocurrent multiplication layer. 1 9 is the outgoing light. Further, 16 is a glass substrate on which the other electrode is placed. In such a configuration, by irradiating the photocurrent multiplication layer 12 with incident light, electrons caused by the photocurrent multiplication phenomenon are injected from the first electrode to the photocurrent multiplication layer 12 to reach the light-emitting layer 14. Thereby, the luminescent layer 14 emits light, and the outgoing light 19 is obtained. Further, the hole transport layer 15 is a hole for providing a light-emitting layer 14 to be combined with electrons for the light-emitting layer 14. In this light-to-light conversion device, the effect of the amplified light and the effect of converting the wavelength can be obtained. The light-amplifying effect of the former is that more electrons than the number of incident photons are injected into the organic EL layer due to the photocurrent multiplication effect, and the number of photons emitted by the organic EL layer is more than the number of photons injected into the photocurrent multiplication layer. . The wavelength conversion effect of the latter is due to the wavelength of the light emitted by the organic EL layer, and is related to the material of the organic EL layer irrespective of the wavelength of the incident light. As a configuration of the light-to-light conversion device, an element in which the photomultiplying element and the organic EL element are discharged on the same substrate or a layered element (Non-Patent Document 3) is also known. Further, in the case of merging, etc., in order to shield the incident light or to improve the characteristics, it is also known that the bonding portion of the light-light conversion portion and the light-emitting portion is inserted into the intermediate electrode (Patent Document 4), but the intermediate electrode is used. In this case, the organic EL element will emit a full range of light, but it is pointed out that its spatial solution will disappear. Patent Document 1 Japanese Patent Laid-Open Publication No. 2002-34 No. 395 Patent Document No. JP-A-2002-76430 Patent Document 3 Japanese Patent Laid-Open Publication No. 2002-1 00797 Patent Document 4 Japanese Special Opening 2 0 0 0 - 9 1 6 2 No. 3 Bulletin Non-Patent Document 1 M. Hiramoto, T. Imahigasi Yokoyama : Applied Physics Letters, Vol. 64 1 87 ( φ Non-patent Document 2 "Applied Physics" Vol. 64 ( 1 995 ) Non-Patent Document 3 Japan No. 49 OBJECT OF THE INVENTION The object of the present invention is to provide a laminated optical-optical conversion device having an intermediate electrode interposed between a light receiving portion and a portion. The present inventors have carefully reviewed the present invention in order to solve the above problems. The present invention provides a light-to-light conversion on the same substrate by light irradiation. And a light-receiving portion having a photocurrent organic semiconductor-containing layer, which is injected and emits light, has a layer including an organic electric field illuminator, and has an electrically separated intermediate portion The means to solve the problem, Μ 1 994 ) , 1036 combined with the light department has a higher result, the device, the phenomenon of increase by the electro-optical department -7- 200810141 (4) and then in order to achieve the above purpose, the present invention is An optical-to-optical conversion device characterized in that: a first electrode that emits light from the outside; a light-receiving portion that converts the light that has entered the first electrode into an electric light, and the light-receiving portion a light-emitting portion that emits light electrically converted from the medium, and a second electrode that is disposed on a side opposite to the light-receiving portion of the light-emitting portion; and an intermediate electrode is provided between the light-receiving portion and the light-emitting portion, and the intermediate electrode The cells are separated into electrical cells that are electrically separated. φ In the above optical-to-optical conversion device, the area of the largest cell among the plurality of cells of the intermediate electrode may be equal to or smaller than the area of the smaller one of the first electrode and the second electrode. In the light-to-optical conversion device of the present invention, by electrically separating the intermediate electrodes, only the portion of each of the intermediate electrodes that receives the incident light can emit light from the organic EL element, so that the light emission of the EL element corresponding to the intermediate electrode pattern can be Achieve spatial decomposition energy. Further, in the optical-optical conversion device of the present invention, by inserting the intermediate electrode, the light emitted from the light-emitting portion is reflected by the φ intermediate electrode and is not absorbed again by the light-receiving portion, so that the light-light conversion efficiency is high. Further, the optical-optical conversion device of the present invention laminates a layer having a function of scattering light between the plurality of cells of the intermediate electrode, whereby not only the incident light leaking from the cells but also the incident light can be suppressed. Light is also more easily detected by the light-receiving portion, and the light emitted from the light-emitting portion can be efficiently taken out to the outside, so that higher light-to-light conversion efficiency can be achieved. Further, the optical-optical conversion device of the present invention can realize a device having wavelength decomposition energy by bringing a layer having a function of selecting the wavelength of the incident light and the EL light emission to or close to the light-receiving portion and the light-emitting portion. It is preferable to use -8 - 200810141 (5) as a light-to-light conversion device in which the optical-optical conversion device is arranged in a matrix form. Further, the device is an image enhancer, an optical amplifying element, a photodetector, or a flexible sheet display device (for example, the device of the present invention is used on a flexible substrate). The above objects and advantages of the present invention will become more apparent from the following examples. [Embodiment] Hereinafter, the present invention will be described in detail. In this manual, ""holes" will be used. (Embodiment 1) FIG. 6 is a cross-sectional view showing an example of a basic structure of a device according to a first embodiment of the present invention. In the embodiment, the first electrode 2 provided on the surface 1 of the material such as glass is laminated, and the first electrode 2 is provided on the layer 6, and the hole transport layer 6 and the first electrode 2 are laminated. The light-emitting layer 5, and the intermediate electrode 4 in the shape of the light-emitting layer 5 and the hole transport layer 6, and the light-receiving portion 3 which is formed by the pair of the intermediate electrode 4 and the light-emitting layer 5 and converting the light incident on the device into electricity In the second electrode method provided on the opposite side to the intermediate electrode 4, the first electrode 2 and the second electrode 7 are generally used, at least one of metal sulfide or metal, or the like (for example, this is also referred to as a display). The light of the switch, the light of the light-light is explained. The hole on the base substrate, which is called the light-to-light conversion light-light conversion, is formed on the opposite side and is formed on the opposite side to the opposite side, and 7. The material of the metal oxide is -9-(6) (6) 200810141. The light-receiving portion 3' is generally caused by light irradiation to cause a phenomenon of photocurrent multiplication. Further, the light-emitting layer 5 and the hole are transported. The layer 6 constitutes the light-emitting portion 10. Further, it is disposed between the light-receiving portion 3 and the light-emitting layer 5 The pole 4 is divided into a plurality of electrically separated cells. Here, the intermediate electrode is generally formed of a metal layer. Fig. 2 is a plan view showing an example in which the intermediate electrode 4 is divided into a plurality of cells. In this example, The intermediate electrode 4 is configured by arranging the square-shaped cells 22 in a plurality of matrix shapes. In the optical-to-optical conversion device of the present invention, even if the individual cells of the intermediate electrode have different individual sizes, the spatial decomposition can be improved and the light can be lighted. From the viewpoint of improvement in conversion efficiency, the largest cell area is preferably equal to or less than the area of the smaller one of the first electrode and the second electrode, and the area of the electrode of the smaller one of the first electrode and the second electrode is 50% or less (especially 10% or less) is more preferable; in general, the lower limit is 0.000025%. At this time, by appropriately adjusting the size of the cell and the cell spacing, it is possible not only to improve the spatial decomposition energy, the light-to-light conversion efficiency, but also to suppress The incident light leaking from the cells improves the contrast between the incident light and the emitted light. The cell size is not particularly limited, but from the viewpoint that the spatial decomposition can be improved, The cell diameter is preferably 5 mm or less, more preferably 1 mm or less, and the lower limit is usually Ιμιη, ideally 1 Ομιη. Further, although the interval between adjacent cells is not particularly limited, the incident light is transmitted in comparison with the emitted light. From the viewpoint of the above, the cell spacing is preferably 1 mm or less, more preferably μπι or less, and the lower limit is usually 1 μπι, ideally 5 μπι. In the above optical-to-optical conversion device, the intermediate electrode 4 can be patterned into any-10-200810141 ( 7) Shape: When such a patterning is performed, when a current after photoelectric conversion flows to the intermediate electrode 4 without incident light, the output light is irradiated from the light-emitting portion 10 in accordance with the shape of the intermediate electrode 4. Examples of the shape of the pattern include a circular shape, an elliptical shape, a rectangular shape (that is, a square shape, a rectangular shape), a rhombus shape, a honeycomb shape, and the like, and from the viewpoint of improving the spatial decomposition energy of the optical-optical conversion device of the present invention, A rectangular shape, a honeycomb shape, a diamond shape which improves the pixel density of the intermediate electrode is preferable, and a honeycomb shape is particularly preferable. These shapes also include φ that are slightly distorted or have bumps. The cells 22 constituting the intermediate electrode 4 in the above-described light-to-optical conversion device may be arranged in a dot matrix shape, and when the path of the incident light is at a point, only a portion of the light-emitting portion 10 directly above the dot range emits light. Thereby, the point of the intermediate electrode 4 matching the pattern shape of the incident light is illuminated, and the pattern shape of the incident light can be reproduced. Further, the size of the dot of the intermediate electrode 4 can be reduced, and the spatial resolution energy (resolution) can be improved by increasing the density, and the reproducibility of the pattern of the incident light can be further improved. Further, it is also possible to cover each of the cells constituting the cell φ 22 of the intermediate electrode 4 (which may be a peripheral portion of each cell and between the cells depending on the case) to laminate a layer having a function of scattering light ( Refer to Figure 7). By adopting this configuration, it is possible to suppress not only the incident light leaking from the cells, but also the light incident portion 3 is more easily detected by the light receiving portion 3, and the light emitted from the light emitting portion 1 can be efficiently taken out to Externally, higher light-to-light conversion efficiency can be achieved. At least one of the light-receiving portion and the light-emitting portion contains a polymer, and the device manufacturing process is improved, or the interface between the light-receiving portion and the light-emitting portion and the intermediate electrode can be improved, and the device productivity is improved. -11 - (8) (8) 200810141 Think. (Embodiment 2) FIG. 3 is a cross-sectional view showing a basic structure of an optical-to-optical conversion device according to a second embodiment of the present invention. The optical-to-optical conversion device of this embodiment has substantially the same configuration as the optical-to-optical conversion device of the first embodiment. The difference from the first embodiment is that the wavelength selective layer 8 has a function of selecting the wavelength (color) of the incident light and the emitted light. The wavelength decomposing energy can be improved by the wavelength selective layer 8. When the light-receiving portion 3 is brought close to or touched to provide a layer having a function of selecting the wavelength of incident light, wavelength selection of incident light can be achieved. For example, in the case of using a wavelength selective layer that selectively passes through green, the emitted light can be obtained only when green light is incident. Further, when a layer having a function of selecting a wavelength of emitted light is provided in proximity to or in contact with the above-described light-emitting portion 1A, wavelength selection of the emitted light can be achieved. For example, when a wavelength selective layer that selectively passes through green is used, only when the light emitted from the light-emitting portion 10 is green, the emitted light can be obtained. Further, the layer having the function of selecting the wavelength of the incident light may be provided close to or in contact with the light-receiving portion 3 and the light-emitting portion 10, and the wavelength selective layer 8 may be patterned as in the case of the intermediate electrode 4. Chemical. At this time, on both sides or at least one side of the patterned intermediate electrode 4, the pattern coordinates of the wavelength selective layer 8 in the light-receiving portion 3 side and the light-emitting portion 1 side may be aligned and laminated. Further, the wavelengths (colors) selected by the -12-(9) (9) 200810141 light portion 3 at the same coordinate position and the wavelength selected by the light-emitting portion 10 side are the same, and are equivalent to pixels of RGB colors. Just make the rules match. In this case, for example, if the input light is a full-color image, a full-color image similar to the input light of the resolution of the intermediate electrode 4 can be output from the light-emitting portion 1A, so that a light having spatial decomposition energy and wavelength decomposition energy can be produced - The light conversion device is provided with the wavelength selection layer 8, and only the light selected by the wavelength selection layer 8 among the light rays incident on the light receiving portion 3 is taken into the light receiving portion 3. For example, the color filter is made of three colors of red, blue, green, etc.; in the plane of the color filter, the position of each color pixel is consistent with the position of the cell of the intermediate electrode 4, red, blue If the mixed light of the green light is incident on the color filter as the incident light, the light transmitted through the color filter is only decomposed into the pixel color of the transmitted color filter to correspond to the color of the incident light. The intensity of the light intensity is taken into the light receiving unit 3. The optical amplification function of the optical-to-optical conversion device of the present invention is related to the intensity of the light incident on the light-receiving portion 3, so that the intensity of the light emitted from the light-emitting portion 10 also changes in synchronization. The wavelength selective layer 8 is composed of a color filter, a interference filter, an inorganic phosphor, an organic phosphor, a microresonator, a ruthenium, a diffraction grating, or the like. In this case, the wavelength selected by the wavelength selective layer 8 is not particularly limited, but is preferably infrared rays, visible light, or near ultraviolet rays. Further, when the light-receiving portion 3 is placed close to or in contact with the intermediate electrode 4, the light-receiving portion 3 can be patterned by laminating materials having different absorption wavelengths. At this time, the light receiving unit 3 also has a function of a wavelength selection layer. -13- 200810141 (10) Further, as the light-emitting portion 1, a material having a different light-emitting color may be patterned and laminated on the side opposite to the light-receiving portion 3 of the intermediate electrode 4. At this time, the light-emitting portion 1 also functions as a wavelength selective layer. (Embodiment 3) FIG. 1 is a cross-sectional view showing a basic structure of a light-to-optical conversion device according to a third embodiment of the present invention. The optical-to-optical conversion device φ in this embodiment has substantially the same structure as the optical-to-optical conversion device according to the first embodiment described above. The difference between the first embodiment and the first embodiment is that the light receiving unit 3 is opposite to the light emitting unit 1 . At this time, the polarity of the voltage applied to the first electrode and the second electrode from the outside must also be reversed. (Other Embodiments) As another embodiment of the present invention, the light-emitting color of the light-emitting portion of the at least one portion of the optical-optical conversion device and the light-emitting portion of the other device may be provided on the same substrate. The structure of the illuminating color of the part is different. In this embodiment, it is preferable to construct a large-sized device by arranging a plurality of optical-to-optical conversion devices in parallel, and it is preferable from the viewpoint of device fabrication processing. Next, the materials (materials) constituting each functional portion of the optical-to-optical conversion device of the present invention will be described. In the light-to-optical conversion device of the present invention, the base substrate 1 may be a glass, a plastic, a polymer film, a tantalum substrate or the like as long as it does not change when the electrodes and layers are formed. When the substrate is opaque, the light-emitting portion 1 is located on the opposite side of the base substrate 1, and is preferably transparent or -14- (11) 200810141 translucent. In the optical-to-optical conversion device of the present invention, the first electrode 2 that is close to or in contact with the base substrate 1 or the second electrode 7 that sandwiches the light-receiving portion 3 and the light-emitting portion 10 between the first electrode 2 can be appropriately used. A film of a metal oxide, a metal sulfide, or a metal having a high transmittance or a high electrical conductivity, which is transparent or translucent, is appropriately selected depending on the organic layer to be used. Specifically, a film made of indium oxide, zinc oxide, tin oxide, or a conductive glass made of indium tin oxide (ITO) or indium zinc oxide, which is a composite of such φ, is used (NESA, etc.). Or use gold, platinum, silver, copper, etc., and ITO, indium zinc oxide, tin oxide is preferred. Examples of the production method include a vacuum deposition method, a sputtering method, an ion coating method, and a plating method. The film thickness of the first electrode 2 and the second electrode 7 can be appropriately selected in consideration of light transmittance and electrical conductivity, and is, for example, 1 Onm to 1 Ομπι, preferably 20 nm to 1 μm, more preferably 5 0 nm to 500 nm. [Description of Organic EL Layer] The organic EL layer which functions as the light-emitting portion 10 in the optical-to-optical conversion device of the present invention is exemplified by a charge transport material or a light-emitting material for a low molecular organic EL device, or is used for A polymer light-emitting material of a polymer type organic EL element. As the illuminating color, in addition to the illuminating of the three primary colors of red, blue and green, there is also an intermediate color or white illuminating. As a material for the low-molecular-weight organic EL device, the "organic EL display device" is used. (Mr. Jingfu, Anda Qianbo, and Murata Yoshiyuki -15- (12) 200810141 16-year publication, first edition, first brush From page 1 to page 1 to page 120, the materials for the transmission of materials, electronic barrier materials, and holes are manufactured by vacuum evaporation method. The OHM Co., Ltd. is a flat sheet of 17 pages, 48 pages, 83 pages. 99 light or neon luminescent materials, hole blocking materials, electron transport materials,

製作。更具體來說，做爲該電洞輸送材料，係例舉有日本 特開昭63 -7025 7號公報、日本特開昭63_ 1 7586〇號公報、 日本特開平2- 1 3 5 3 59號公報、日本特開平八1 3 53 6 1號公 報、日本特開平2-20998 8號公報、日本特開平2_311591 號公報、日本特開平3-37992號公報、日本特開平3_ 1 52 1 84號公報、日本特開平n_3 5687號公報、日本特開 平1 1 · 2 1 7 3 9 2號公報、日本特開2000-80 1 67號公報所記載 者等。 做爲燐光發光材料可進一步舉出三重項發光錯合物， 具體來說可例舉出以銦爲中心金屬之Ir ( ppy ) 3、Btp2 Ir (acac )，以白金爲金屬中心之PtOEP，以銪爲中心金屬 之Eu ( TTA ) 3 phen等。做爲其他具體例子，例如記載於 以下文件。Production. More specifically, the material for transporting the hole is exemplified by Japanese Laid-Open Patent Publication No. Sho 63-7025, Japanese Laid-Open Patent Publication No. SHO 63_1 7586 No., and Japanese Patent Laid-Open No. 2-135. Japanese Unexamined Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Japanese Unexamined Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Further, as the luminescent material, a triple-light luminescent complex may be further exemplified, specifically, Ir (ppy) 3 and Btp2 Ir (acac) having indium as a center metal, and PtOEP having platinum as a metal center.铕 is the central metal Eu ( TTA ) 3 phen and so on. As other specific examples, for example, it is described in the following documents.

Nature, ( 1 99 8 ) 5 3 95，1 5 1 Appl. Phys. Lett. ( 1 999 ) ,75 ( 1 )，4 Proc. SPIE-Int· Soc. Opt· Eng. ( 2001 ) ，4105 (Nature, ( 1 99 8 ) 5 3 95,1 5 1 Appl. Phys. Lett. ( 1 999 ) , 75 ( 1 ), 4 Proc. SPIE-Int· Soc. Opt· Eng. ( 2001 ) , 4105 (

Organic Light-Emitting Materials and Devices IV)，119 J . A m . C h e m · S o c .，（ 2 0 0 1 )，1 2 3，4 3 0 4 Appl. Phys. Lett., ( 1997 )，71 ( 18)，25 96 Syn· Met·，（ 1 998 )，94 ( 3 )，245 -16- 200810141 (13)Organic Light-Emitting Materials and Devices IV), 119 J . A m . C hem · S oc ., ( 2 0 0 1 ), 1 2 3, 4 3 0 4 Appl. Phys. Lett., ( 1997 ), 71 (18),25 96 Syn· Met·, ( 1 998 ), 94 ( 3 ), 245 -16- 200810141 (13)

Syn· Met”（ 1 999 )，99 ( 2 )，127Syn· Met” ( 1 999 ), 99 ( 2 ), 127

Adv· Mater·，（ 1 999 ) ,1 1 ( 1 0 )，852Adv· Mater·, ( 1 999 ) , 1 1 ( 1 0 ), 852

Jpn· J. Appl. Phys·，34，1 8 83 ( 1 995 ) 做爲各層之厚度，係以發光效率或驅動電壓成爲期望 値的方式來適當選擇，一般爲5〜20 Onm。做爲電洞輸送層 ，係例舉1 0〜1 OOnm，理想爲2 0〜8 Onm。做爲發光層，係 例舉1 0〜1 OOnm，理想爲20〜80nm。電洞阻擋層，係例舉 φ 5〜5〇nm，理想爲10〜3〇nm。作爲電子注入層，係例舉 1 0〜1 OOnm，理想爲20〜8〇nm。做爲此等層之成膜方法，除 了真空蒸鍍、叢晶蒸鍍、分子線蒸鍍等真空處理之外，可 形成溶解性或乳膠狀者，則例舉有使用後述之塗佈法或印 刷法來成膜的方法。 高分子型有機EL元件用材料，例舉有「高分子EL 材料」（大西敏博、小山珠美合著共立出版 2004年刊 物初版第1刷發行）3 3頁〜5 8頁所記載之材料，以與電 φ 荷注入層或電荷輸送層層積的構造，可構築有機電激發光 兀件。更具體來說，做爲高分子化合物之電洞輸送性材料 、電子輸送性材料及發光材料，例舉有W099/1 3692號公 開說明書、WO99/48 1 60號公開說明書、GB2340304A、 WOOO/5 3 65 6號公開說明書、WO0 1/1 9834號公開說明書、 WOOO/55927 號公開說明書、GB23483 1 6、WOOO/4632 1 號 公開說明書、WO00/06665號公開說明書、W099/54943號 公開說明書、W099/543 85號公開說明書、US 5777070、 W098/ 06773號公開說明書、WO97/05 1 84號公開說明書 -17- (14) (14)200810141 、WOOO/3 5987號公開說明書、WOOO/53 655號公開說明書 、WO0 1/34722號公開說明書、W099/24526號公開說明書 、WO00/22027號公開說明書、WO00/22026號公開說明書 、W098/271 36 號公開說明書、US573 63 6、W098/21262 號公開說明書、US5741921、WO9 7/09394號公開說明書、 W096/29356號公開說明書、WO96/1 06 1 7號公開說明書、 EP 0707020、WO95/07955號公開說明書、日本特開2001 -181618號公報、日本特開2001-123156號公報、日本特開 2001-3045號公報、日本特開2000-351967號公報、日本 特開2 0 0 0 - 3 0 3 0 6 6號公報、日本特開2 0 〇 0 - 2 9 9 1 8 9號公報 、日本特開2000-252065號公報、日本特開2000-136379 號公報、曰本特開2000-104057號公報、日本特開2000-80167號公報、日本特開平10-324870號公報、日本特開 平10-114891號公報、曰本特開平9-11123 3號公報、日本 特開平9 - 4 5 4 7 8號公報等所揭示的莽、其衍生物及共聚物 ’聚亞芳基、其衍生物及共聚物，聚亞芳基乙烯基、其衍 生物及共聚物，芳香族胺及其衍生物的（共）聚合物。發 光材料或電荷輸送材料，也可以混合上述低分子型有機 EL元件用發光材料或電荷輸送材料來使用。做爲高分子 發光層之厚度’例如5〜3 00nm，理想爲30〜200nm，更理 想爲4 0〜1 5 0 n m。 做爲電荷注入層之具體例，可舉出含導電性高分子之 層；設置於陽極與電洞輸送層之間，具有陽極材料與電洞 輸送層所包含之電洞輸送性材料之中間値的離子化電勢， -18- 200810141 (15) 而包含此種材料的層；設置於陰極與電子輸送層之間’具 有陰極材料與電子輸送層所包含之電子輸送性材料之中間 値的電子親和力，而包含此種材料的層等。 上述電荷注入層包含導電性高分子的情況下’該層係 最少在一邊之電極與發光層之間，鄰接該電極而設置。該 導電性高分子之電氣傳導度，以1〇-7 s/cm以上1〇3 S/cm 以下爲佳，而爲了減少發光像素間之洩漏電流’以1 0_5 φ S/cm 以上 1 02 S/cm 以下較佳，以 1 〇·5 S/cm 以上 1 01 S/cm 以下更佳。一*般爲了將該導電性局分子之電热傳導度做爲 1(T7 S/cm以上1〇3 s/cm以下，係對該導電性高分子佈植 適量離子。所佈植之離子種類’若是電洞注入層則爲陰離 子，若是電子注入層則爲陽離子。做爲陰離子的例子，可 舉出聚乙烯楓酸離子、烷基苯楓酸離子、樟腦楓酸離子等 ;做爲陽離子的例子，可舉出鋰離子、鈉離子、鉀離子、 四丁基銨離子等。做爲電荷注入層之膜厚，例如1〜15 Onm H ，理想爲2〜1 0 0 n m。 電荷注入層所使用之材料’只要依據與電極或所接觸 之層的關係來適當選擇即可，例如有：聚苯胺及其衍生物 ，聚吩及其衍生物，聚吡咯及其衍生物，聚亞苯基乙燃及 其衍生物，聚噻吩及其衍生物，聚喹啉及其衍生物，聚喹 喔啉及其衍生物，在主鏈或側鏈包含芳香族胺之聚合物等 導電性高分子；金屬酞菁（酞菁銅等）；碳等。 以容易注入電荷爲目的’而可接觸陰極及/或陽極來 設置之絕緣層（一般爲l〇nm以下）的材料，可舉出金屬 -19- (16) 200810141 氟化物或金屬氧化物、或有機絕緣材料等；以鹼金屬或鹼 土金屬等之金屬氟化物或金屬氧化物爲佳。Jpn·J. Appl. Phys·, 34, 1 8 83 (1955) The thickness of each layer is appropriately selected so that the luminous efficiency or the driving voltage becomes a desired enthalpy, and is generally 5 to 20 Onm. As a hole transport layer, the system is exemplified by 10 to 1 00 nm, and ideally 2 to 8 to 8 Onm. As the light-emitting layer, it is exemplified by 10 to 100 nm, and preferably 20 to 80 nm. The hole blocking layer is exemplified by φ 5 to 5 〇 nm, and preferably 10 to 3 〇 nm. The electron injecting layer is exemplified by 10 to 100 nm, preferably 20 to 8 Å. In order to form a film forming method for such a layer, in addition to vacuum treatment such as vacuum vapor deposition, crystal deposition, or molecular vapor deposition, a solubility or a latex may be formed, and a coating method described later or A method of film formation by printing. The material for the polymer type organic EL device is exemplified by the material of the "polymer EL material" (the first print of the first edition of the publication of the 2004 publication of the publication of the publication of the publication of the publication of the publication of the publication of the publication of the publication of the publication of the publication of A structure in which an electric φ charge injection layer or a charge transport layer is laminated can construct an organic electroluminescence element. More specifically, as the hole transporting material, the electron transporting material, and the luminescent material of the polymer compound, there are exemplified by W099/1 3692, WO99/48 1 60, GB2340304A, WOOO/5 3, 65, the disclosure of the specification, WO0 1/1 9834, the specification of WOOO/55927, the publication of GB23483, the publication of WOOO/4632, the publication of WO00/06665, the publication of WO99/54943, the publication of W099 /543 No. 85, the disclosure of the specification, US Pat. No. 5,777,070, the disclosure of the specification of WO 97/05 1 84, the disclosure of WO 97/05 1 84, and the disclosure of WOOO/3 5987, WOOO/53 655 The specification, WO0 1/34722 publication specification, WO99/24526 publication specification, WO00/22027 publication specification, WO00/22026 publication specification, W098/271 36 publication specification, US573 63 6 and W098/21262 publication specification, US Pat. No. 5,719, 921, WO 9 7 394 394, and WO 096/29356, and WO 96/1 06 177, the disclosure of which is incorporated herein by reference. Japanese Laid-Open Patent Publication No. 2001-123156, Japanese Laid-Open Patent Publication No. 2001-3045, Japanese Laid-Open Patent Publication No. 2000-351967, Japanese Patent Publication No. 2000-300, and Japanese Patent Publication No. 2 0 〇 0 - 2 9 9 1 8 9th, Japanese Laid-Open Patent Publication No. 2000-252065, Japanese Laid-Open Patent Publication No. 2000-136379, Japanese Laid-Open Patent Publication No. 2000-104057, Japanese Laid-Open Patent Publication No. 2000-80167, Japanese Unexamined Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. And copolymer 'polyarylene, derivatives and copolymers thereof, polyarylene vinyl, derivatives and copolymers thereof, (co)polymers of aromatic amines and derivatives thereof. The luminescent material or the charge transporting material may be used by mixing the luminescent material or the charge transporting material for the low molecular organic EL device. The thickness of the polymer light-emitting layer is, for example, 5 to 300 nm, preferably 30 to 200 nm, more preferably 4 0 to 150 nm. As a specific example of the charge injection layer, a layer containing a conductive polymer may be mentioned; and it is provided between the anode and the hole transport layer, and has an intermediate between the anode material and the hole transporting material contained in the hole transport layer. Ionization potential, -18- 200810141 (15) A layer containing such a material; disposed between the cathode and the electron transport layer 'having electron affinities between the cathode material and the electron transporting material contained in the electron transporting layer And a layer containing such a material, and the like. When the charge injection layer contains a conductive polymer, the layer is provided between the electrode and the light-emitting layer at least on one side, and is adjacent to the electrode. The electrical conductivity of the conductive polymer is preferably 1 〇 -7 s/cm or more and 1 〇 3 S/cm or less, and the leakage current between the luminescent pixels is reduced by 1 0_5 φ S/cm or more. Preferably, it is preferably 1 〇·5 S/cm or more and 1 01 S/cm or less. In order to make the electrothermal conductivity of the conductive local molecule 1 (T7 S/cm or more and 1 〇 3 s/cm or less, an appropriate amount of ions is implanted on the conductive polymer. 'If the hole injection layer is an anion, if it is an electron injection layer, it is a cation. Examples of the anion include polyethylene maple acid ion, alkyl phenate acid ion, camphoric acid ion, etc.; Examples thereof include lithium ions, sodium ions, potassium ions, tetrabutylammonium ions, etc. The film thickness of the charge injection layer is, for example, 1 to 15 Onm H , preferably 2 to 1 0 0 nm. The material to be used 'may be appropriately selected depending on the relationship with the electrode or the layer to be contacted, for example, polyaniline and its derivatives, polyphenylene and its derivatives, polypyrrole and its derivatives, polyphenylene B Combustion and its derivatives, polythiophene and its derivatives, polyquinoline and its derivatives, polyquinoxaline and its derivatives, conductive polymers such as polymers containing aromatic amines in the main chain or side chain; Phthalocyanine (copper phthalocyanine, etc.); carbon, etc. The material of the insulating layer (generally less than 10 nm) which can be placed in contact with the cathode and/or the anode is exemplified by metal -19-(16) 200810141 fluoride or metal oxide, or organic insulating material; A metal fluoride or a metal oxide such as an alkali metal or an alkaline earth metal is preferred.

具有至此所述之材料的層（發光層或電荷輸送層）、 不包含該聚合物之發光層或電荷輸送層及電荷注入層，作 爲其成膜方法，例如有使用塗佈法或印刷法從溶液成膜的 方法；只要塗佈此溶液之後加以乾燥來去除溶媒即可，又 ，在混合有電荷輸送材料或發光材料之情況下也可使用相 同手法，在製造上非常有利。做爲從溶液成膜的方法，可 使用旋轉塗佈法、模鑄法、微凹版塗佈法、凹版塗佈法、 棒狀塗佈法、輥塗佈法、線棒塗佈法、浸泡塗佈法、噴塗 法、網版印刷法、韌性印刷法、補償印刷法、微管塗佈法 、噴嘴塗佈法、噴墨列印法等塗佈法。又，電荷注入材料 爲乳膠狀而可分散於水或乙醇者，也可用相同方法成膜。 高分子材料與溶媒一同使用時，做爲該溶媒並無特別 限制’以可均勻分散該高分子材料者爲佳。該高分子材料 可溶於非極性溶媒時，該溶媒可例舉出：三氯甲烷、氯化 甲；k、~氯乙院等氯系溶媒；四氫化呋喃等醚系溶媒；甲 苯、二甲苯、四氫化萘、苯甲醚、η-己基苯、環己基苯等 芳香族碳氫系溶媒；十氫化萘、二環己基等脂肪族碳氫系 溶媒·’丙酮、甲基乙基酮、2_庚酮等酮系溶媒；醋酸乙酯 '醋酸丁酯、乙基賽路蘇乙酸酯、丙烯乙二醇單甲基醚乙 酸酯等酯系溶劑。 其次’爲了更容易從中間電極4對發光部1 0輸送電 子而設置電子輸送層的情況下，做爲該電子輸送性材料， -20- (17) (17)200810141 只要是從電極注入電子而輸送的高分子材料則無特別限制 ’可適當使用在高分子中包含7Γ或α共軛系高分子或電子 輸送性基的高分子材料。更具體來說，可利用記載有上述 電洞輸送性高分子之文件所記載的材料。更且也包含合併 使用低分子的電子輸送性材料。 做爲本發明中電子輸送層之膜厚，依據所使用材料其 取ί土値會不同’只要运擇爲驅動電壓與發光效率成爲適當 的値即可，例如Inm〜1 μπι，理想爲2〜500nm，更理想爲 5 nm〜2 0 Onm 〇 本發明所使用之電洞輸送性材料或電子輸送性材料除 了電荷的輸送之外，也可適當利用具有發光機構者，可以 將發光材料佈植於此等層來使用。 層積有機層之情況下，爲了防止上下層混合，係使一 開始形成之層不溶化爲佳。做爲此不溶化處理，例如有使 用具有可溶性前驅體或可溶基的高分子，藉由熱處理將前 驅體轉換爲共轭系高分子，或將可溶基分解來降低溶解性 而不溶化的方法；或是使用分子內具有架橋基之電洞輸送 性高分子的方法；或是混合一種藉由熱、光、電子束等而 產生架橋反應的寡聚物或巨集體的方法等。 做爲架橋基，例如有側鏈具有乙烯基、（甲基）丙烯 酸基、氧環丁烷基、環丁二烯基、二烯基等的高分子。此 等基之導入率，只要對電子輸送性高分子成膜時所使用之 溶媒爲不溶化者，則無特別限制。例如0.0 1 wt%〜3 Owt%， 理想爲〇.5wt%〜20wt%，更理想爲lwt%〜10wt%。 -21 - (18) 200810141 又，產生架橋反應之寡聚物或巨集體中，例如有聚苯 乙烯換算之重量平均分子量2000以下的化合物，有兩個 以上乙烯基、（甲基）丙烯酸基、氧環丁烷基、環丁二烯 基、二烯基者。更且，也例如有酸無水物基或桂皮酸等在 分子間會得到架橋反應的化合物。做爲此等之例子，可適 當使用「υν·ΕΒ硬化技術之現狀與展望」（市村國宏 編修，CMC有限公司出版 2002年刊物第1版第1刷發 φ 行 第2章）所記載者。 本發明之光-光轉換裝置中，於發光部使用高分子材 料時，該純度會影響電荷輸送特性或發光特性等元件性能 ，故在聚合之前將寡聚物蒸餾、昇華提煉、再結晶等，以 管柱層析法提煉之後再聚合爲佳。又，聚合後藉由酸洗淨 、鹼洗淨、中和、水洗淨、有機溶媒洗淨、再沉澱、離心 分離、抽出、管柱層析法、透析等慣用的分離操作、提煉 操作、乾燥等其他操作來進行純化處理。 〔光電流倍增層之說明〕 其次說明本發明之光-光轉換裝置中，構成工作爲受 光部3之光電流倍增層的材料。做爲此光電流倍增層之材 料，例如有3,4,9，10 -芘四羧3,4,9，10 -二（甲基醯亞胺）（ 簡稱 Me-PTC) ，3,4,9，10-芘四羧 3,4,9，10-二（苯基乙基 醯亞胺），3,4,9，10-芘四羧酸二無水物，咪唑•芘，酞菁銅 ’氧鈦基酞菁，氧釩基酞菁，酞菁鎂，無金屬酞菁，萘酞 菁，萘，2,9-二甲基喹吖啶酮，無置換喹吖啶酮，並五苯 -22- 200810141 (19) ’ 6,13-並五苯醌，5，7,12,14 -並五苯特多龍等，或該等之 衍生物等低分子材料。更且可使用將上述材料分散於聚碳 酸酯或聚乙烯丁醛等樹脂的樹脂分散型材料。做爲此等材 料所構成之光電流倍增層的製造方法，例如有真空蒸鍍、 叢晶蒸鍍、分子線蒸鍍等真空處理，而上述材料中可形成 溶解性或乳膠狀者或樹脂分散型材料，則例舉有使用上述 塗佈法或印刷法來成膜的方法。 φ 做爲光電流倍增層之膜厚，一般爲50〜l〇〇〇nm，理想 爲100〜800nm，更理想爲200〜500nm。 〔中間電極之說明〕 本發明之光一光轉換裝置中的中間電極4，可以由一 層來構成，但是因爲可以分別引出受光部3及發光部！ 〇 的性能，故以組合2種以上，尤其3種以上的材料爲佳。 中間電極4之中，作爲與受光部3接觸之側的材料， φ 係以使受光部3與中間電極4之邊界面由非常細微之凹凸 來構成的方式’而可在成膜時使用由微粒子集合體所形成 者；例如可舉出金、銀’但是從提筒將受光邰3之光轉換 爲電氣之效率的觀點來看’以金爲佳。又可在中間電極4 上層積鋁（A1 )等不同種金屬。做爲此中間電極之膜厚， 以1〜lOOnm爲佳，3〜80nm較佳’ 5〜50nm更佳。 中間電極4之中，作爲與發光部1 0接觸之側的材料 ，以工作函數較小之材料爲佳。例如鋰、鈉、鉀、_、铯 、鈹、鎂、鈣、緦、鋇、鋁、銃、釩、鋅、釔、銦、鈽、 -23- (20) (20)200810141 釤、銪、铽、鏡等金屬，及該等之中兩種以上的合金，或 該等之中一種以上與金、銀、錳、鈦、鈷、鎳、鎢、錫中 一種以上的合金、石墨或石墨層間化合物等。做爲合金例 子’可舉出鎂—銀合金、鎂-銦合金、鎂-銘合金、銦-銀合 金、鋰·鋁合金、鋰-鎂合金、鋰-銦合金、鈣-鋁合金等， 而從提高發光部發光效率的觀點來看，以鈣、鋇、鎂-鋁 合金爲佳。也可做爲2層以上之層積構造。組合兩種以上 來做爲上述中間電極的材料時，該材料係從接觸受光部3 側往接觸發光部1 0側的順序，做爲（1 )鎂-銀合金/鋰/鈣 /鋇’ （2 )銀/鋁/鎳，（3 )金/銀爲佳。如此一來，能夠 更佳有效地引發出售光部3及發光部1 〇個別的性能。其 膜厚可考慮電氣傳導度及耐久性來適當選擇，例如 10nm〜ΙΟμπχ，理想爲20nm〜Ιμιη，更理想爲30nm〜500nm。 更且如第7圖所示，在中間電極之複數胞之間，層積具有 使光線散射之功能的層9時，具有使光線散射之功能的層 9其材料，可使用將折射率不同之2種以上化合物加以混 合的材料。作爲其具體例子，可以將氧化鈦、氧化鋁等金 屬氧化物、金屬複合氧化物等高折射率化合物，與樹脂等 低折射率之化合物的組合；或是將丙烯酸酯、異丁烯酸酯 '苯乙烯等寡聚物聚合而得到之球狀中空微粒子、多孔質 微粒子、核心•襯套構造等多層構造微粒子，氟樹脂微粒 子或中空玻璃微粒子等低折射率化合物，與有機鈦等高折 射率化合物的組合。爲了形成具有使光線散射之功能的層 ’可使用例如凹版塗佈法、噴塗佈法、網版印刷法、靭性 -24- 200810141 (21) 印刷法 '補償印刷法等印刷方法。又，具有使光線散射之 功能的之層的材料，係如光阻劑般具有感光性的情況下， 則可以由光來圖案化。此外，本發明之光一光轉換裝置也 可以具有第1電極、受光部、發光部、第2電極、以及中 間電極以外的層。 實施例 φ &lt;實施例1〉 以下’在實施例1中說明第6圖所示之本發明實施方 式1之光-光轉換裝置120的製造工程。第4圖係槪略說 明本發明之光一光轉換裝置之製造工程之一例的立體圖。 光-光轉換裝置1 2 0，係在基底基板1上形成被圖案 化之ITO透明電極來做爲第1電極2。然後在第1電極2 上，真空蒸鍍酞菁銅l〇nm，4,4，-二·〔N-(l-萘基）-N-苯 基胺基〕二苯基（NPD) 50nm成膜爲電洞輸送層6。 • 其次在電洞輸送層6上，真空蒸鍍有三（8 -喹啉）鋁 (Alq ) 7 0nm而成膜爲發光層5。在此，將電洞輸送層6 與發光層5 (將此等層合倂爲發光部1 0 )成膜之際，係以 一次真空吸引來依序成膜。 其次如第4圖所示，使用開口部爲〇 · 5mm見方、間隔 0.5mm之陰影遮罩’在發光層5上真空蒸鍍銘30nm之後 ，不移動陰影遮罩再真空蒸鍍金1 ’而成膜中間電極4 〇 其次，在中間電極4上，做爲由有機半導體材料構成 -25- 200810141 (22) 而工作爲受光部3的光電流倍增層，係將3,4,9,10-芘四羧 酸二無水物（NTCDA)成膜800nm，在其上藉由真空蒸鍍 法成膜金30nm做爲第2電極7，而製作出光-光轉換裝 置 120。 &lt;實施例2&gt; 接下來，實施例2中係說明第1圖所示之本發明實施 方式3，其中光一光轉換裝置1〇〇的製造工程。 實施例2之光-光轉換裝置，與實施例1之光-光轉 換裝置1 20所示的受光部3與發光部1 0，其位置不同。於 基底基板1上被圖案化爲第1電極2的ITO透明電極上， 做爲由有機半導體材料所構成而工作爲受光部3的光電流 倍增層，係將3，4，9，10-芘四羧酸二無水物（NTCDA)成 膜 8 0 Onm 〇 其次，使用與實施例1相同之陰影遮罩，在受光部3 上做爲中間電極4而藉由真空蒸鍍來蒸鍍金5nm，接著不 移動陰影遮罩一起蒸鍍鎂與銀45nm。其次在中間電極4 上，依序成膜三（8-喹啉）鋁（Alq) 70nm做爲發光層5 ，和4,4’-二〔N- ( 1-萘基）-N-苯基胺基〕二苯基（NPD )5 Onm做爲電洞輸送層6，來形成發光部1 〇 ;之後以真 空蒸鍍法成膜金30nm做爲第2電極7，而製作出光一光 轉換裝置100。 〈比較例1&gt; -26- (23) 200810141 更且除了不設置中間電極4之外，與實施例2 —樣製 作出光-光轉換裝置。 &lt;測定•算出方法&gt; 實施例1、實施例2及比較例1中，所製作之光-光 轉換裝置的特性，係在從受光部3照射波長400nm、光強 度5 6pW/cm2之雷射光的狀態下，施加外部電壓（20V ) ，以輝度計（日本TOPCON公司製造，品名：BM-8 )測 定此時從發光部1 0射出的光線輝度，最後換算出出射光 子數量對入射光子數量的比，藉此算出光一光轉換效率。 實施例1、實施例2及比較例1中之光-光轉換裝置 的光-光轉換效率，其測定•算出結果表示於第1表。 〔第' 1表〕 實施例1 實施例2 比較例1 光—光轉換效率 50倍 1〇倍 3倍 &lt;評價&gt; 如第1表所示，實施例1及實施例2之光-光轉換裝 置，比較起比較例1，確認到顯示了較高光-光轉換效率 。又，實施例1之光-光轉換裝置，係可透過ITO透明電 極觀測到來自發光部的發光，確認到比實施例2之光-光 轉換裝置表現出更高的光-光轉換效率。更且實施例1及 實施例2之光-光轉換裝置，任一個都是只有從構成中間 電極之胞所存在的部分才能觀測到發光，而確認到具有較 -27- (24) 200810141 高的空間分解能。 產業上之可利用性 以上，本發明之光一光轉換裝置，係藉由將被分隔爲 電氣分離之複數胞的中間電極，設置於受光部與發光部之 間，而具有較高的空間分解能及光-光轉換效率。又，本 發明之光一光轉換裝置，係藉由在中間電極之複數胞之間 φ ，層積具有使光線散射之功能的層，而可達成更高的光一 光轉換效率。此種本發明之光-光轉換裝置，可以理想使 用做爲將光-光轉換裝置配列爲矩陣狀的顯示器裝置，或 是影像增輝器、光增幅元件、光開關、光感測器、可撓性 薄片顯示器裝置。 本發明雖依據圖示所示之實施例來說明，但若是相關 業者，明顯可輕易改變及變更此發明，此種變更部分也包 含於發明範圍內。 【圖式簡單說明】 〔第1圖〕本發明之第3實施方式中’表示具有中間 電極，同時將此中間電極圖案化後之光一光轉換裝置其基 本構造之一例的剖面圖 〔第2圖〕本發明之光-光轉換裝置中’表示中間電 極之圖案化之一例的俯視圖 〔第3圖〕本發明之第2實施方式中’表示插入波長 選擇層之光-光轉換裝置其基本構造的剖面圖 -28- 200810141 (25) 〔第4圖〕說明本發明之光一光轉換裝置之製造工程 之一例的立體圖 〔第5圖〕表示先前之光-光轉換裝置之構造例的一 面圖 〔第6圖〕本發明之第1實施方式中，表示具有中間 _ 電極，同時將此中間電極圖案化後之光一光轉換裝置其基 本構造之一例的剖面圖 φ 〔第7圖〕表示在構成中間電極之胞之間，層積具胃 使光散射之功能之層，此種光-光轉換裝置之一例（（a )、（b ))的剖面圖（符號1、2、6、7、10省略） 【主要元件符號說明】 1 :基底基板 2 :第1電極 3 :受光部 • 4 :中間電極 5 :發光層 6 :電洞輸送層 7 :第2電極 8 =波長選擇層 9 :層 1 〇 :發光部 1 2 :光電流倍增層 13 :第1電極 -29- 200810141 (26) 1 4 :發光層 1 5 :電洞輸送層 1 6 :玻璃基板 18 :入射光 1 9 :出射光 _ 22 :胞 1〇〇 :光一光轉換裝置 . 110:光—光轉換裝置 120 :光一光轉換裝置A layer (light-emitting layer or charge transport layer) having a material as described herein, a light-emitting layer or a charge transport layer and a charge injection layer not including the polymer, and a film forming method thereof, for example, using a coating method or a printing method A method of forming a solution into a film; if the solution is applied and dried to remove the solvent, the same method can be used in the case where the charge transporting material or the luminescent material is mixed, which is very advantageous in terms of production. As a method of forming a film from a solution, a spin coating method, a die casting method, a micro gravure coating method, a gravure coating method, a bar coating method, a roll coating method, a wire bar coating method, a dipping coating method can be used. Coating methods such as cloth method, spray coating method, screen printing method, ductile printing method, compensation printing method, micro tube coating method, nozzle coating method, and ink jet printing method. Further, if the charge injection material is in the form of a latex and can be dispersed in water or ethanol, it can be formed by the same method. When the polymer material is used together with the solvent, there is no particular limitation as the solvent. It is preferred that the polymer material can be uniformly dispersed. When the polymer material is soluble in a non-polar solvent, the solvent may, for example, be chloroform or chlorinated methyl; a chlorine-based solvent such as k or chloroethene; or an ether-based solvent such as tetrahydrofuran; toluene or xylene , an aromatic hydrocarbon-based solvent such as tetrahydronaphthalene, anisole, η-hexylbenzene or cyclohexylbenzene; an aliphatic hydrocarbon-based solvent such as decalin or dicyclohexyl, 'acetone, methyl ethyl ketone, 2 a ketone-based solvent such as heptanone; an ester solvent such as ethyl acetate 'butyl acetate, ethyl sir. acetate, or propylene glycol monomethyl ether acetate. Next, in the case where the electron transport layer is more easily transported from the intermediate electrode 4 to the light-emitting portion 10, as the electron transporting material, -20-(17)(17)200810141 is as long as electrons are injected from the electrode. The polymer material to be transported is not particularly limited. A polymer material containing 7 Å or an α conjugated polymer or an electron transporting group in the polymer can be suitably used. More specifically, the material described in the document describing the above-mentioned hole transporting polymer can be used. It also includes the use of low molecular weight electron transport materials. As the film thickness of the electron transport layer in the present invention, depending on the material used, the ί soil 値 will be different. 'As long as the driving voltage and the light-emitting efficiency are appropriate, for example, Inm~1 μπι, ideally 2~ 500 nm, more preferably 5 nm to 2 0 Onm 电 The hole transporting material or electron transporting material used in the present invention can be used in addition to the transfer of electric charge, and the luminescent material can be implanted in the illuminating material. These layers are used. In the case of laminating an organic layer, in order to prevent mixing of the upper and lower layers, it is preferred that the layer formed at the beginning is insolubilized. For this insolubilization treatment, for example, a method of using a polymer having a soluble precursor or a soluble group, converting a precursor into a conjugated polymer by heat treatment, or decomposing a soluble group to reduce solubility without melting; Or a method of using a hole transporting polymer having a bridging group in a molecule; or a method of mixing an oligomer or a giant group which generates a bridging reaction by heat, light, electron beam or the like. As the bridging group, for example, a polymer having a vinyl group, a (meth)acrylic acid group, an oxycyclobutane group, a cyclobutadienyl group, a dienyl group or the like may be used. The introduction rate of these groups is not particularly limited as long as the solvent used for film formation of the electron transporting polymer is insolubilized. For example, 0.01% by weight to 3% by weight, desirably from 5% to 5% by weight, more preferably from 1% by weight to 10% by weight. -21 - (18) 200810141 Further, in the oligomer or macrogen which generates a bridging reaction, for example, a compound having a weight average molecular weight of 2,000 or less in terms of polystyrene has two or more vinyl groups, (meth)acrylic groups, Oxycyclocycloalkyl, cyclobutadienyl, dienyl. Further, for example, there are compounds such as an acid anhydride group or cinnamic acid which have a bridging reaction between molecules. For the example of this, you can use the "Current Status and Prospects of υν·ΕΒ Hardening Technology" (Edited by Shimura Kokuhiro, CMC Co., Ltd., published in the first edition of the 2002 edition, the first edition of the φ line, Chapter 2) . In the light-to-optical conversion device of the present invention, when a polymer material is used in the light-emitting portion, the purity affects device performance such as charge transport characteristics and light-emitting characteristics. Therefore, the oligomer is distilled, sublimed, recrystallized, etc. before polymerization. It is preferred to re-polymerize after column chromatography. Further, after the polymerization, the conventional separation operation, refining operation, such as acid washing, alkali washing, neutralization, water washing, organic solvent washing, reprecipitation, centrifugation, extraction, column chromatography, dialysis, etc. Other operations such as drying are carried out for purification. [Description of Photocurrent Multiplication Layer] Next, a material constituting the photocurrent multiplication layer of the light receiving unit 3 in the optical-optical conversion device of the present invention will be described. The material for the photocurrent multiplication layer is, for example, 3,4,9,10-tetracarboxylic acid 3,4,9,10-bis(methyl quinone imine) (Me-PTC for short), 3, 4, 9,10-decanetetracarboxylic acid 3,4,9,10-di(phenylethyl quinone imine), 3,4,9,10-decanetetracarboxylic acid di-anhydride, imidazole • hydrazine, copper phthalocyanine Oxytitanium phthalocyanine, vanadyl phthalocyanine, magnesium phthalocyanine, metal-free phthalocyanine, naphthalocyanine, naphthalene, 2,9-dimethylquinacridone, non-substituted quinacridone, pentacene- 22- 200810141 (19) '6,13- pentacene quinone, 5,7,12,14- pentacene trodone, etc., or low molecular materials such as these derivatives. Further, a resin dispersion type material in which the above materials are dispersed in a resin such as polycarbonate or polyvinyl butyral can be used. A method for producing a photocurrent multiplication layer composed of such materials may be, for example, a vacuum treatment such as vacuum deposition, cluster vapor deposition, or molecular vapor deposition, or a solvent or a resin dispersion may be formed in the above materials. As the type of material, a method of forming a film by the above coating method or printing method is exemplified. φ is used as the film thickness of the photocurrent multiplication layer, and is generally 50 to 10 nm, preferably 100 to 800 nm, more preferably 200 to 500 nm. [Description of the intermediate electrode] The intermediate electrode 4 in the optical-to-optical conversion device of the present invention may be constituted by one layer, but the light-receiving portion 3 and the light-emitting portion can be separately led out! The performance of 〇 is preferably two or more kinds, and particularly three or more types of materials. Among the intermediate electrodes 4, as a material on the side in contact with the light-receiving portion 3, φ is formed such that the boundary surface between the light-receiving portion 3 and the intermediate electrode 4 is formed by very fine unevenness, and the fine particles can be used in film formation. The person formed by the aggregate; for example, gold or silver is used. However, from the viewpoint of converting the light of the light source 3 into electrical efficiency, it is preferable to use gold. Further, different kinds of metals such as aluminum (A1) may be laminated on the intermediate electrode 4. The film thickness of the intermediate electrode is preferably 1 to 100 nm, more preferably 3 to 80 nm, and more preferably 5 to 50 nm. Among the intermediate electrodes 4, as the material on the side in contact with the light-emitting portion 10, a material having a small work function is preferable. For example, lithium, sodium, potassium, _, strontium, barium, magnesium, calcium, strontium, barium, aluminum, strontium, vanadium, zinc, antimony, indium, antimony, -23- (20) (20) 200810141 钐, 铕, 铽a metal such as a mirror, or an alloy of two or more of these, or one or more of the alloys of at least one of gold, silver, manganese, titanium, cobalt, nickel, tungsten, and tin, graphite or graphite intercalation compounds Wait. Examples of the alloys include magnesium-silver alloys, magnesium-indium alloys, magnesium-aluminum alloys, indium-silver alloys, lithium aluminum alloys, lithium-magnesium alloys, lithium-indium alloys, calcium-aluminum alloys, and the like. From the viewpoint of improving the luminous efficiency of the light-emitting portion, calcium, barium, magnesium-aluminum alloy is preferred. It can also be used as a laminated structure of two or more layers. When two or more materials are used as the material of the above-mentioned intermediate electrode, the material is in the order of contacting the light-receiving portion 3 side toward the side of the light-emitting portion 10 as (1) magnesium-silver alloy/lithium/calcium/钡' 2) Silver/aluminum/nickel, (3) gold/silver is preferred. As a result, the performance of the light-emitting unit 3 and the light-emitting unit 1 can be more effectively and efficiently generated. The film thickness can be appropriately selected in consideration of electrical conductivity and durability, for example, 10 nm to ΙΟμπχ, preferably 20 nm to Ιμηη, more preferably 30 nm to 500 nm. Further, as shown in Fig. 7, when the layer 9 having the function of scattering light is laminated between the plurality of cells of the intermediate electrode, the material of the layer 9 having a function of scattering light can be used, and the refractive index can be different. A material in which two or more compounds are mixed. Specific examples thereof include a combination of a high refractive index compound such as a metal oxide such as titanium oxide or aluminum oxide or a metal composite oxide, and a compound having a low refractive index such as a resin; or an acrylate or methacrylate styrene. A multi-layer structure microparticle such as a spherical hollow microparticle, a porous microparticle, a core or a liner structure obtained by polymerization of an oligomer, a low refractive index compound such as a fluororesin microparticle or a hollow glass microparticle, and a combination of a high refractive index compound such as an organic titanium. . In order to form a layer having a function of scattering light, a printing method such as a gravure coating method, a spray coating method, a screen printing method, or a toughness-24-200810141 (21) printing method 'compensation printing method can be used. Further, when a material having a function of scattering light is photosensitive as a photoresist, it can be patterned by light. Further, the optical-to-optical conversion device of the present invention may have a layer other than the first electrode, the light-receiving portion, the light-emitting portion, the second electrode, and the intermediate electrode. [Embodiment] φ &lt;Example 1> Hereinafter, in the first embodiment, the manufacturing process of the optical-optical conversion device 120 of the first embodiment of the present invention shown in Fig. 6 will be described. Fig. 4 is a perspective view showing an example of a manufacturing process of the optical-to-optical conversion device of the present invention. The optical-to-optical conversion device 120 forms a patterned ITO transparent electrode on the base substrate 1 as the first electrode 2. Then, on the first electrode 2, vacuum-deposited copper phthalocyanine l〇nm, 4,4,-di-[N-(l-naphthyl)-N-phenylamino]diphenyl (NPD) 50 nm The film is a hole transport layer 6. • Next, on the hole transport layer 6, a light-emitting layer 5 is formed by vacuum-depositing tris(8-quinoline)aluminum (Alq) 70 nm. Here, when the hole transport layer 6 and the light-emitting layer 5 (the layers are laminated to form the light-emitting portion 10) are formed, the film is sequentially formed by vacuum suction. Next, as shown in Fig. 4, a shadow mask having an opening of 〇·5 mm square and a gap of 0.5 mm is used. After vacuum deposition of 30 nm on the light-emitting layer 5, the shadow mask is not moved and the gold is evaporated by vacuum 1 '. The film intermediate electrode 4 is next, and on the intermediate electrode 4, it is composed of an organic semiconductor material -25-200810141 (22) and operates as a photocurrent multiplication layer of the light receiving portion 3, which is 3, 4, 9, 10-芘The tetracarboxylic acid dihydrate (NTCDA) was formed into a film of 800 nm, and 30 nm of gold was formed as a second electrode 7 by a vacuum deposition method to prepare a photo-optical conversion device 120. &lt;Embodiment 2&gt; Next, in the second embodiment, the third embodiment of the present invention shown in Fig. 1 will be described, in which the optical-optical conversion device 1 is manufactured. The light-to-light conversion device of the second embodiment differs from the light-receiving portion 3 and the light-emitting portion 10 shown in the optical-optical conversion device 1 of the first embodiment in the position. The ITO transparent electrode patterned on the base substrate 1 as the first electrode 2 is a photocurrent multiplication layer which is formed of an organic semiconductor material and operates as the light receiving portion 3, and is 3, 4, 9, 10-芘The tetracarboxylic acid dihydrate (NTCDA) was formed into a film of 80 onm. Next, using the same shadow mask as in Example 1, the gold was deposited by vacuum evaporation on the light-receiving portion 3 as the intermediate electrode 4, followed by evaporation of gold by 5 nm. Magnesium and silver are evaporated together at 45 nm without moving the shadow mask. Next, on the intermediate electrode 4, a film of tris(8-quinoline)aluminum (Alq) 70 nm is sequentially formed as the light-emitting layer 5, and 4,4'-bis[N-(1-naphthyl)-N-phenyl group Amino]diphenyl (NPD) 5 Onm is used as the hole transport layer 6 to form the light-emitting portion 1 〇; then, 30 nm of gold is formed as a second electrode 7 by vacuum evaporation to produce a light-to-light conversion device. 100. <Comparative Example 1> -26- (23) 200810141 An optical-optical conversion device was produced in the same manner as in Example 2 except that the intermediate electrode 4 was not provided. &lt;Measurement and Calculation Method&gt; In the first, second and comparative examples 1, the characteristics of the optical-optical conversion device produced were that the light-receiving portion 3 was irradiated with a light having a wavelength of 400 nm and a light intensity of 5 6 pW/cm 2 . In the light-emitting state, an external voltage (20 V) was applied, and the luminance of the light emitted from the light-emitting portion 10 at this time was measured by a luminance meter (manufactured by TOPCON, Japan, product name: BM-8), and finally, the number of emitted photons and the number of incident photons were converted. The ratio is used to calculate the light-to-light conversion efficiency. The light-to-light conversion efficiencies of the optical-optical conversion devices of Example 1, Example 2, and Comparative Example 1 are shown in the first table. [Table 1] Example 1 Example 2 Comparative Example 1 Light-to-light conversion efficiency 50 times 1 time 3 times &lt;Evaluation&gt; As shown in Table 1, the light-light of Example 1 and Example 2 The conversion device was compared with Comparative Example 1, and it was confirmed that high light-to-light conversion efficiency was exhibited. Further, in the optical-optical conversion device of the first embodiment, the light emitted from the light-emitting portion was observed through the ITO transparent electrode, and it was confirmed that the light-to-light conversion device of the second embodiment exhibited higher light-to-light conversion efficiency. Further, in the light-to-optical conversion devices of the first embodiment and the second embodiment, any one of the cells constituting the intermediate electrode can be observed to emit light, and it is confirmed that the light is higher than -27-(24) 200810141. Spatial decomposition can. INDUSTRIAL APPLICABILITY The light-to-optical conversion device of the present invention has a high spatial decomposition energy by providing an intermediate electrode that is divided into a plurality of electrically separated intermediate electrodes between the light-receiving portion and the light-emitting portion. Light-to-light conversion efficiency. Further, in the optical-to-optical conversion device of the present invention, a layer having a function of scattering light is formed by φ between the plurality of cells of the intermediate electrode, whereby a higher light-to-light conversion efficiency can be achieved. The light-to-light conversion device of the present invention can be preferably used as a display device in which a light-to-light conversion device is arranged in a matrix, or an image enhancer, an optical amplification device, an optical switch, a photo sensor, and a flexible device. Sex sheet display device. The present invention has been described with reference to the embodiments shown in the drawings, and it is obvious that the invention can be easily changed and changed by those skilled in the art, and such modifications are also included in the scope of the invention. [Brief Description of the Drawings] [Fig. 1] A cross-sectional view showing an example of a basic structure of a light-to-optical conversion device having an intermediate electrode and an intermediate electrode in the third embodiment of the present invention (Fig. 2) In the light-to-optical conversion device of the present invention, a plan view showing an example of patterning of the intermediate electrode (Fig. 3) shows a basic structure of the optical-optical conversion device in which the wavelength selective layer is inserted in the second embodiment of the present invention. Section -28-200810141 (25) [Fig. 4] A perspective view showing an example of the manufacturing process of the optical-to-optical conversion device of the present invention (Fig. 5) showing a side view of the structure of the conventional light-to-light conversion device. In the first embodiment of the present invention, a cross-sectional view φ [Fig. 7] showing an example of a basic structure of a light-to-optical conversion device having an intermediate electrode and patterning the intermediate electrode is shown to constitute an intermediate electrode. Between the cells, a layer having a function of scattering light by the stomach is laminated, and a cross-sectional view of one example ((a), (b)) of such a light-to-light conversion device is omitted (symbols 1, 2, 6, 7, 10) ) [main element DESCRIPTION OF REFERENCE NUMERALS 1 : Base substrate 2 : First electrode 3 : Light-receiving portion • 4 : Intermediate electrode 5 : Light-emitting layer 6 : Hole transport layer 7 : Second electrode 8 = Wavelength selective layer 9 : Layer 1 〇 : Light-emitting portion 1 2: photocurrent multiplication layer 13: first electrode -29- 200810141 (26) 1 4 : light-emitting layer 15: hole transport layer 1 6 : glass substrate 18: incident light 1 9 : outgoing light _ 22 : cell 1 〇 〇: light-to-light conversion device. 110: light-to-light conversion device 120: light-to-light conversion device

Claims (1)

(1) (1)200810141 十、申請專利範圍 1· 一種光-光轉換裝置，其特徵係層積有： 射入有來自外部之光的第1電極， 和將射入上述第1電極之上述光轉換爲電氣的受光部 和藉由上述受光部中所轉換之電氣來發光的發光部， 和設置於上述發光部中與上述受光部相反側的第2電 極； 而且上述受光部與上述發光部之間設置有中間電極， 該中間電極係被分隔爲電氣分離之複數胞。 2·如申請專利範圍第1項所記載之光-光轉換裝置 ，其中，上述中間電極之複數胞中最大胞的面積，係第1 電極及第2電極中較小一方的電極面積以下。 3 ·如申請專利範圍第1項所記載之光一光轉換裝置 ，其中，上述中間電極係以金屬層所構成。 4·如申請專利範圍第1項所記載之光-光轉換裝置 ，其中，上述中間電極之複數胞中最大胞的面積，對於第 1電極及第2電極中較小一方的電極面積，係5 0%以下。 5. 如申請專利範圍第1項所記載之光一光轉換裝置 ，其中，上述中間電極之複數胞之間，層積有具有使光散 射之功能的層。 6. 如申請專利範圍第1項所記載之光一光轉換裝置 ，其中，上述受光部係藉由光照射，而引起光電流倍增現 象。 -31 - (2) (2)200810141 7. 如申請專利範圍第1項所記載之光-光轉換裝置 ，其中，靠近或接觸於上述受光部，係設置有具有選擇入 射光波長之功能的層。 8. 如申請專利範圍第1項所記載之光-光轉換裝置 ，其中，靠近或接觸於上述發光部，係設置有具有選擇出 射光波長之功能的層。 9. 如申請專利範圍第1項所記載之光-光轉換裝置 ，其中，上述受光部、發光部之最少一方，係含有高分子 〇 10. 如申請專利範圍第1項所記載之光-光轉換裝置 ，其中，於第1電極、第2電極係使用金屬氧化物、金屬 硫化物或金屬等最少一種或此等所組合而成的材質。 1 1. 一種光-光轉換裝置，其特徵係將申請專利範圍 第1項所記載之光-光轉換裝置在同一塊基板上設置2個 以上，使最少一部份裝置之發光部的發光色，與其他裝置 之發光部的發光色不同。 1 2 . —種顯示裝置，其特徵係將申請專利範圍第1項 所記載之光-光轉換裝置配置爲矩陣狀。 1 3 · —種影像增輝器，其特徵係使用申請專利範圍第 1項所記載之光-光轉換裝置。 1 4. 一種光增幅元件，其特徵係使用申請專利範圍第 1項所記載之光-光轉換裝置。 1 5 · —種光開關，其特徵係使用申請專利範圍第1項 所記載之光-光轉換裝置。 -32- 200810141 (3) 1 6. —種光感測器，其特徵係使用申請專利範圍第1 項所記載之光-光轉換裝置。 1 7. —種可撓性薄片顯示器裝置，其特徵係將申請專 利範圍第1項所記載之光-光轉換裝置使用於具有可撓性 的基板上。(1) (1) 200810141 X. Patent Application No. 1. An optical-to-optical conversion device characterized in that: a first electrode into which light from the outside is incident, and the above-mentioned first electrode are incident on the first electrode a light-receiving portion electrically converted into an electric light-receiving portion and a light-emitting portion that emits light by the electric light converted by the light-receiving portion, and a second electrode provided on the opposite side of the light-receiving portion in the light-emitting portion; and the light-receiving portion and the light-emitting portion An intermediate electrode is provided between the intermediate electrodes, which are separated into electrically separated plural cells. The optical-optical conversion device according to the first aspect of the invention, wherein the area of the largest cell in the plurality of cells of the intermediate electrode is equal to or smaller than the area of the smaller one of the first electrode and the second electrode. The optical-to-optical conversion device according to the first aspect of the invention, wherein the intermediate electrode is formed of a metal layer. The optical-optical conversion device according to the first aspect of the invention, wherein the area of the largest cell in the plurality of cells of the intermediate electrode is the area of the electrode of the smaller one of the first electrode and the second electrode. 0% or less. 5. The light-to-optical conversion device according to claim 1, wherein a layer having a function of scattering light is laminated between the plurality of cells of the intermediate electrode. 6. The light-to-optical conversion device according to claim 1, wherein the light-receiving portion is caused by light irradiation to cause photocurrent multiplication. The optical-optical conversion device according to the first aspect of the invention, wherein the light-receiving unit is provided with a layer having a function of selecting a wavelength of incident light. . 8. The optical-to-optical conversion device according to claim 1, wherein a layer having a function of selecting a wavelength of emitted light is provided in proximity to or in contact with the light-emitting portion. 9. The light-to-light conversion device according to the first aspect of the invention, wherein the light-receiving unit and the light-emitting unit are at least one of the light-emitting units. In the conversion device, at least one of a metal oxide, a metal sulfide, or a metal, or a combination thereof, is used for the first electrode and the second electrode. 1 1. An optical-to-optical conversion device characterized in that the light-to-optical conversion device according to the first aspect of the invention is provided on the same substrate by two or more, so that the illuminating color of the light-emitting portion of at least a part of the device is provided. It is different from the illuminating color of the light-emitting portion of other devices. A display device characterized in that the optical-optical conversion devices described in claim 1 are arranged in a matrix. 1 3 - An image enhancer characterized by using the optical-optical conversion device described in claim 1 of the patent application. 1 4. An optical amplification element characterized by using the optical-optical conversion device described in claim 1 of the patent application. 1 5 - An optical switch characterized by using the optical-optical conversion device described in claim 1 of the patent application. -32- 200810141 (3) 1 6. A type of photosensor characterized by using the optical-optical conversion device described in claim 1 of the patent application. A flexible sheet display device characterized in that the optical-optical conversion device according to the first aspect of the invention is applied to a flexible substrate. -33--33-
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