CN217214721U - Bias voltage modulation quantum dot imaging device, imaging array and imaging device - Google Patents
Bias voltage modulation quantum dot imaging device, imaging array and imaging device Download PDFInfo
- Publication number
- CN217214721U CN217214721U CN202220065312.0U CN202220065312U CN217214721U CN 217214721 U CN217214721 U CN 217214721U CN 202220065312 U CN202220065312 U CN 202220065312U CN 217214721 U CN217214721 U CN 217214721U
- Authority
- CN
- China
- Prior art keywords
- diode
- quantum dot
- imaging device
- dot layer
- diodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Light Receiving Elements (AREA)
Abstract
The present disclosure relates to a bias modulated quantum dot imaging device, an imaging array and an imaging apparatus, the imaging device comprising: the photodiode is made of quantum dot photosensitive materials and is arranged in a stacked mode; the photodiode comprises at least one first diode and at least two second diodes, and the first diode and the second diodes are sequentially arranged at intervals; each first diode is conducted under the voltage of a first direction, and each second diode is conducted under the voltage of a second direction; the first direction voltage and the second direction voltage are one of a forward direction voltage and a reverse direction voltage, respectively. Therefore, the imaging device takes the photodiodes which are arranged in a stacked mode as the light path, the imaging light path system and the later software processing process are greatly simplified, the pixel loss rate and the alignment deviation are reduced, and the switching of fusion detection of different wave bands can be achieved only by modulating the bias direction.
Description
Technical Field
The present disclosure relates to the field of photoelectric sensor technology, and in particular, to a bias-modulated quantum dot imaging device, an imaging array, and an imaging apparatus.
Background
The infrared detection and imaging technology has wide and important application in military fields such as infrared reconnaissance and infrared guidance and civilian fields such as epidemic prevention and control and automatic driving. In many infrared detector types, a two-color detector can separately and independently detect two different infrared bands or two different wavelengths of the same band. Compared with the traditional single-waveband infrared photoelectric detector, the double-color detector system provides two waveband information, can inhibit the complex background of a target, can provide better target identification, and improves the anti-interference capability of the detection system and the detection capability under the complex environment. In addition, the double short wave infrared detector has very important application value in the aspects of gas sensing and analysis, humidity and carbon dioxide monitoring and spectral imaging of water-containing molecular objects. In addition, the dual-band fusion imaging can display the information of two bands of the imaging target on the same picture, and more information of the target can be acquired more effectively, quickly and accurately.
In the related technology, the multiband fusion imaging technology is to collect images of each waveband of a target object by using a plurality of single-waveband detectors respectively and fuse the plurality of images by using an algorithm. However, because the pixels of the single-band detectors are not matched, the use of the algorithm to fuse the images can cause pixel resolution loss; and the light path that passes when every wave band is imaged is different, thereby causes each wave band image shooting angle to have deviation, needs to distinguish the image characteristic point when the image fuses and draws, carries out image stack after the image correction again, and it is difficult to realize the pixel level and aims at the deviation to appear easily.
SUMMERY OF THE UTILITY MODEL
To solve the above technical problem or at least partially solve the above technical problem, the present disclosure provides a bias voltage modulated quantum dot imaging device, an imaging array and an imaging apparatus.
The present disclosure provides a bias modulated quantum dot imaging device, comprising: the photodiode is made of quantum dot photosensitive materials and is arranged in a stacked mode;
the photodiode comprises at least one first diode and at least two second diodes, and the first diode and the second diodes are sequentially arranged at intervals;
each first diode is conducted under a first direction voltage, and each second diode is conducted under a second direction voltage; the first direction voltage and the second direction voltage are respectively one of a forward direction voltage and a reverse direction voltage.
In some embodiments, the response bands of all the first diodes are different;
the response wave bands of all the second diodes are different.
In some embodiments, the response bands of all of the photodiodes are different.
In some embodiments, the number of second diodes is greater than the number of first diodes;
for each first diode, the response waveband of one second diode is the same as that of the first diode.
In some embodiments, the second diode having the same response band as the first diode is adjacent to the first diode.
In some embodiments, the stacked arrangement of diodes is on a first type of conductive substrate;
the first diode comprises a first photosensitive quantum dot layer and a second type doped quantum dot layer which are arranged in a stacked mode; in the first diode, the first photosensitive quantum dot layer is positioned on one side of the second type doped quantum dot layer, which faces away from the first type conductive substrate;
the second diode comprises a second photosensitive quantum dot layer and another second type doped quantum dot layer which are stacked; in the second diode, the second photosensitive quantum dot layer is positioned on one side of the second type doped quantum dot layer facing the first type conductive substrate;
the first type and the second type are respectively one of a P type and an N type.
In some embodiments, the same layer of second-type-doped quantum dots is shared by the first and second diodes that are adjacent.
The present disclosure also provides a bias modulated quantum dot imaging array comprising any of the above-described imaging devices;
the imaging devices are arranged in an array.
In some embodiments, the imaging array further comprises a pixel electrode and a common ground electrode;
the common ground electrode is a full-face electrode, and the stacked photodiodes are positioned between the common ground electrode and the pixel electrode;
or the common ground electrode is a grid electrode, and each pixel electrode is respectively positioned in a grid of the grid electrode, and the grid electrode and the pixel electrode are positioned on the same side of the stacked photodiodes.
The present disclosure also provides an imaging device comprising any of the above imaging arrays, further comprising an external power supply;
the external power supply is used for providing the first direction voltage or the second direction voltage for the imaging array.
Compared with the prior art, the technical scheme provided by the embodiment of the disclosure has the following advantages:
the quantum dot imaging device, the imaging array and the imaging device provided by the embodiment of the disclosure have the following advantages: the photodiode is made of quantum dot photosensitive materials and is arranged in a stacked mode; the photodiode comprises at least one first diode and at least two second diodes, and the first diode and the second diodes are sequentially arranged at intervals; each first diode is conducted under the voltage of a first direction, and each second diode is conducted under the voltage of a second direction; the first direction voltage and the second direction voltage are one of a forward direction voltage and a reverse direction voltage, respectively. Therefore, the imaging device takes the stacked photodiodes as the light path, the imaging light path system and the post-software processing process are greatly simplified, the pixel loss rate and the alignment deviation are reduced, and the switching of fusion detection of different wave bands can be realized only by modulating the bias direction.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure.
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present disclosure, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.
Fig. 1 is a schematic structural diagram of an imaging device provided in an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of an imaging device provided in an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of another imaging device provided in an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of another imaging device provided in an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of another imaging device provided in an embodiment of the present disclosure;
fig. 6 is a schematic structural diagram of still another imaging device provided in an embodiment of the present disclosure;
fig. 7 is a schematic structural diagram of still another imaging device provided in an embodiment of the present disclosure;
fig. 8 is a schematic diagram illustrating an operating principle of an imaging device according to an embodiment of the present disclosure;
fig. 9 is a schematic structural diagram of an imaging array according to an embodiment of the present disclosure.
110, a first type conductive substrate layer; 120. a first diode; 121. a first photosensitive quantum dot layer; 130. a second diode; 131. a second photosensitive quantum dot layer; 132. a second type doped quantum dot layer; 140. a metal top electrode; 150. a pixel electrode; 160. a common ground electrode.
Detailed Description
In order that the above objects, features and advantages of the present disclosure may be more clearly understood, aspects of the present disclosure will be further described below. It should be noted that the embodiments and features of the embodiments of the present disclosure may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced in other ways than those described herein; it is to be understood that the embodiments disclosed in the specification are only a few embodiments of the present disclosure, and not all embodiments.
In the related technology, the multiband fusion imaging technology is to collect images of each waveband of a target object by using a plurality of single-waveband detectors respectively and fuse the plurality of images by using an algorithm. However, because the pixels of the single-band detectors are not matched, the use of the algorithm to fuse the images can cause pixel resolution loss; and the light path that each wave band passes when imaging is different to lead to each wave band image shooting angle to have a deviation, need carry out image superposition after discerning the extraction, image correction to image feature point when the image fusion, it is difficult to realize pixel level alignment, alignment deviation appears easily.
In order to improve at least one of the above defects, the embodiments of the present disclosure provide a bias-modulated quantum dot imaging device, an imaging array and an imaging apparatus, where the imaging device includes: the photodiode is made of quantum dot photosensitive materials and is arranged in a stacked mode; the photodiode comprises at least one first diode and at least two second diodes, and the first diode and the second diodes are sequentially arranged at intervals; each first diode is conducted under the voltage in the first direction, and each second diode is conducted under the voltage in the second direction; the first direction voltage and the second direction voltage are one of a forward direction voltage and a reverse direction voltage, respectively. Therefore, the imaging device takes the photodiodes which are arranged in a stacked mode as the light path, the imaging light path system and the later software processing process are greatly simplified, the pixel loss rate and the alignment deviation are reduced, and the switching of fusion detection of different wave bands can be achieved only by modulating the bias direction.
The bias voltage modulated quantum dot imaging device, the imaging array and the imaging device provided by the embodiment of the disclosure are exemplarily described below with reference to fig. 1 to 9.
In some embodiments, as shown in fig. 1 or fig. 2, a schematic structural diagram of an imaging device provided in an embodiment of the present disclosure is shown. Referring to fig. 1, the imaging device includes: the photodiode is made of quantum dot photosensitive materials and is arranged in a stacked mode; the photodiode comprises at least one first diode 120 and at least two second diodes 130, and the first diode 120 and the second diodes 130 are sequentially arranged at intervals; each first diode 120 is turned on at a first directional voltage, and each second diode 130 is turned on at a second directional voltage; the first direction voltage and the second direction voltage are one of a forward direction voltage and a reverse direction voltage, respectively.
The number of the first diodes 120 and the number of the second diodes 130 may be equal or unequal. When the number of the first diodes 120 is equal to that of the second diodes 130, the number of the first diodes 120 is greater than or equal to two; when the numbers of the first diode 120 and the second diode 130 are not equal, the number relationship therebetween satisfies: the number of first diodes is equal to the number of first diodes-1.
When the first diode 120 is turned on under the first direction voltage, the first diode 120 works, the second diode 130 does not work, and at this time, the imaging device is in the first working mode; when the second diode 130 is turned on at the second direction voltage, the second diode 130 works, the first diode 120 does not work, and at this time, the imaging device is in the second working mode; the switching between the two detection modes can be realized by modulating the bias direction.
Illustratively, as shown in fig. 1, the imaging device includes two first diodes 120 and two second diodes 130, wherein the first diodes 120 and the second diodes 130 are sequentially disposed at intervals, and the conductive base layer 110, the first second diodes 130, the first diodes 120, the second diodes 130, and the metal top electrode 140 are sequentially disposed from bottom to top. By modulating the bias direction, the switching of two detection modes of single-band and dual-band fusion can be realized.
Illustratively, as shown in fig. 2, the imaging device includes two first diodes 120 and two second diodes 130, the first diodes 120 and the second diodes 130 are sequentially disposed at intervals; the conductive substrate layer 110, the first and second diodes 130, the first and first diodes 120, the second and second diodes 130, the second and first diodes 120, and the metal top electrode 140 are sequentially arranged from bottom to top. By modulating the bias direction, the switching between two detection modes of dual-band fusion and dual-band fusion can be realized.
Illustratively, the imaging device includes M first diodes 120 and N second diodes 130, the first diodes 120 and the second diodes 130 being sequentially disposed at intervals; wherein M, N is an integer, M is more than or equal to 1, and N is more than or equal to 2. By modulating the bias direction, the switching of two detection modes of M-band fusion and N-band fusion can be realized.
It can be understood that fig. 1 only exemplarily shows that the imaging device includes one first diode 120 and two second diodes 130, and fig. 2 only exemplarily shows that the imaging device includes two first diodes 120 and two second diodes 130, but does not constitute a limitation on a method for manufacturing the imaging device provided by the embodiment of the present disclosure. In other embodiments, the number of the first diode 120 and the second diode 130 may also be three, four or more, and may also be flexibly set according to the requirement of the imaging device, which is not limited herein.
The quantum dot imaging device comprises photodiodes which are made of quantum dot photosensitive materials and are arranged in a stacked mode; the photodiode comprises at least one first diode and at least two second diodes, and the first diode and the second diodes are sequentially arranged at intervals; each first diode is conducted under the voltage in the first direction, and each second diode is conducted under the voltage in the second direction; the first direction voltage and the second direction voltage are one of a forward direction voltage and a reverse direction voltage, respectively. Therefore, the imaging device takes the stacked photodiodes as the light path, the imaging light path system and the post-software processing process are greatly simplified, the pixel loss rate and the alignment deviation are reduced, and the switching of two detection modes can be realized only by modulating the bias direction.
In some embodiments, the response bands of all the first diodes are different; the response bands of all the second diodes are different from each other.
By means of the arrangement, the switching of the two different wave band fusion detection modes can be achieved by modulating the bias voltage direction.
In some embodiments, the response bands of all photodiodes are different.
By the arrangement, the imaging device can realize detection of more different wave bands.
In some embodiments, the number of second diodes is greater than the number of first diodes; for each first diode, the response waveband of a second diode is the same as that of the first diode.
So set up, the wave band scope that the second diode detected has included the wave band that the first diode detected, because first diode and the range upon range of setting of second diode, the light path of the two is the same basically, and the angular deviation and the alignment deviation of formation of image are less, can realize the contrast and detect.
In some embodiments, a second diode having the same response band as the first diode is adjacent to the first diode.
The second diode having the same response band as the first diode may be disposed on the upper side of the first diode, or may be disposed on the lower side of the first diode, which is not limited herein.
So set up, the same first diode of response wave band sets up with the second diode is adjacent, and the light path of the two is the same basically, and the angular deviation and the alignment deviation of formation of image are less, can realize more accurate contrast and survey.
In some embodiments, as shown in fig. 3, a schematic structural diagram of another imaging device provided for embodiments of the present disclosure is shown. Referring to fig. 3, the diodes are stacked on the first type conductive base layer 110; the first diode 120 includes a first photosensitive quantum dot layer 121 and a second type-doped quantum dot layer 132 which are stacked; in the first diode 120, the first photosensitive quantum dot layer 121 is located on the side of the second-type doped quantum dot layer 132 facing away from the first-type conductive base layer 110; the second diode 130 includes a second photosensitive quantum dot layer 131 and another second-type doped quantum dot layer 132 which are stacked; in the second diode 130, the second photosensitive quantum dot layer 131 is located on the side of the second-type doped quantum dot layer 132 facing the first-type conductive base layer 110; the first type and the second type are respectively one of a P type and an N type.
The first type conductive substrate layer 110 may be disposed as a P type, and may also be disposed as an N type, which is not limited herein. The N-type conductive substrate layer 110 is formed of Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Indium Gallium Oxide (IGO), Gallium Zinc Oxide (GZO), zinc oxide (ZnO), indium oxide (In) 2 O 3 ) One or more of Aluminum Zinc Oxide (AZO) and carbon nano tube. The P-type conductive base layer may be provided with any conductive base material known to those skilled in the art, and is not limited thereto.
The second-type doped quantum dot layer 132 may be disposed as a P-type, and may also be disposed as an N-type, which is not limited herein. When the electrical base layer 110 is set to N-type, the second-type doped quantum dot layer 132 is set to P-type; when the electrical base layer 110 is set to the P-type, the second-type doped quantum dot layer 132 is set to the N-type. When the second-type doped quantum dot layer 132 is P-type, it can be silver telluride (Ag) 2 Te) nanoparticles, zinc oxide (ZnO) nanoparticles or tin oxide (SnO) 2 ) One or more of the nanoparticles. The N-type doped quantum dot layer may be provided as any quantum dot material known to those skilled in the art, and is not limited thereto.
Wherein, the first photosensitive quantum dot layer 121 is one of HgTe, HgSe, CdSe, CdTe, PbS, PbSe, and PbTe; the second photosensitive quantum dot layer 131 is one of HgTe, HgSe, CdSe, CdTe, PbS, PbSe, PbTe and has a non-response band different from that of the first photosensitive quantum dot layer 121.
The metal top electrode 140 may be one of gold (Au), silver (Ag), aluminum (Al), nickel (Ni), and nichrome, or other conductive material known to those skilled in the art, and is not limited thereto.
Illustratively, as shown in fig. 3, the imaging device is, from bottom to top, a first type conductive base layer 110, a first second diode 130, a first diode 120, a second diode 130, and a metal top electrode 140; in the first diode 120, the first photosensitive quantum dot layer 121 is located on the side of the second-type doped quantum dot layer 132 facing away from the first-type conductive base layer 110; in the two second diodes 130, the second photosensitive quantum dot layer 131 is located on the side of the second-type doped quantum dot layer 132 facing the first-type conductive base layer 110; thus, the second-type doped quantum dot layer 132 of the first second diode 130 is adjacent to the second-type doped quantum dot layer 132 of the first diode 120, and the first photosensitive quantum dot layer 121 of the first diode 120 is adjacent to the second photosensitive quantum dot layer 131 of the second diode 130.
In some embodiments, as shown in fig. 4 or fig. 5, a schematic structural diagram of another imaging device provided in the embodiments of the present disclosure is shown. Referring to fig. 4 or 5, the same second-type doped quantum dot layer 132 is shared by the adjacent first and second diodes 120 and 130.
Illustratively, as shown in fig. 4 or 5, the imaging device is, from bottom to top, a first type conductive base layer 110, a first second diode 130, a first diode 120, a second diode 130, and a metal top electrode 140; the first second diode 130 and the first diode 120 share the same second-type doped quantum dot layer 132.
Illustratively, as shown in fig. 5, the imaging device is an ITO substrate in which the first type conductive substrate layer 110 is an N type in order from bottom to top; the first second photosensitive quantum dot layer 131 is an a-type HgTe quantum dot, the first photosensitive quantum dot layer 121 is a B-type HgTe quantum dot, and the second photosensitive quantum dot layer 131 is a C-type HgTe quantum dot; the first second type doped quantum dot layer 132 and the second type doped quantum dot layer 132 are of P-type Ag 2 A Te doped quantum dot layer; the metal top electrode 140 is a gold electrode. Wherein, the first photosensitive quantum dot layer 121 of the first diode 120 is a B-type HgTe quantum dot, the response band thereof is a medium wave infrared, and the cutoff wavelength is 3-5 μm; first of the first second diodes 130The two photosensitive quantum dot layers 131 are A type HgTe quantum dots, the response wave band of the A type HgTe quantum dots is short wave infrared, and the cutoff wavelength is 2-2.5 mu m; the second photosensitive quantum dot layer 131 of the second diode 130 is a C-type HgTe quantum dot with a response band of near infrared with a cutoff wavelength of 1.5-2 μm. By modulating the bias direction, the switching of the single-band (medium wave infrared) and dual-band (near infrared/short wave infrared) fusion detection modes can be realized.
It can be understood that fig. 5 only exemplarily shows that the first photosensitive quantum dot layer 121 is disposed as a B-type HgTe quantum dot, the first second photosensitive quantum dot layer 131 is disposed as an a-type HgTe quantum dot layer, and the second photosensitive quantum dot layer 131 is disposed as a C-type HgTe quantum dot layer, but does not constitute a limitation of the embodiments of the present disclosure. In other embodiments, the first photosensitive quantum dot layer and the second photosensitive quantum dot layer may be further configured with other photosensitive materials known to those skilled in the art, and are not limited herein.
In some embodiments, as shown in fig. 6 or fig. 7, a schematic structural diagram of another imaging device provided in the embodiments of the present disclosure is shown. Referring to fig. 6 or 7, the same first photosensitive quantum dot layer 121 is shared by two adjacent second-type doped quantum dot layers 132.
Illustratively, as shown in fig. 6 or fig. 7, the imaging device is, from bottom to top, a first type conductive substrate layer 110, a second photosensitive quantum dot layer 131, a first second type doped quantum dot layer 132, a first photosensitive quantum dot layer 121, a second type doped quantum dot layer 132, and a metal top electrode 140. Wherein the second photosensitive quantum dot layer 131 and the first second type doped quantum dot layer 132 form a first second diode 130, the first second type doped quantum dot layer 132 and the first diode 120 formed by the first photosensitive quantum dot layer 121, the first photosensitive quantum dot layer 121 and the second type doped quantum dot layer 132 form a second diode 130, i.e. the first second diode 130 and the first diode 120 share one second type doped quantum dot layer 132, and the first diode 120 and the second diode 130 share one first photosensitive quantum dot layer 121.
Illustratively, the imaging device is bottom-up, as shown in fig. 7Sequentially comprises the following steps: the first type conductive substrate layer 110 is an N-type ITO substrate; the second photosensitive quantum dot layer 131 is an a-type HgTe quantum dot, and the first photosensitive quantum dot layer 121 is a B-type HgTe quantum dot; the first second type doped quantum dot layer 132 and the second type doped quantum dot layer 132 are of P-type Ag 2 A Te doped quantum dot layer; the metal top electrode 140 is a gold (Au) electrode. Wherein the first diode 120 and the second diode 130 share a first photosensitive quantum dot layer 121, the first photosensitive quantum dot layer 121 is a B-type HgTe quantum dot, the response wavelength band of which is medium-wave infrared and the cutoff wavelength is 3-5 μm; the second photosensitive quantum dot layer 131 of the first and second diodes 130 is a type a HgTe quantum dot with a response band of short wavelength infrared with a cutoff wavelength of 2-2.5 μm. By modulating the bias direction, the switching of the single-band (medium wave infrared) and dual-band (short wave/medium wave infrared) fusion detection modes can be realized; the response wave band of the second diode is the same as that of the first diode, and contrast detection can be realized.
Exemplarily, as shown in fig. 8, a schematic diagram of an operating principle of an imaging device provided in an embodiment of the present disclosure is shown. Referring to fig. 8, the imaging device is, from bottom to top, a first type conductive substrate layer 110, a second photosensitive quantum dot layer 131, a first second type doped quantum dot layer 132, a first photosensitive quantum dot layer 121, a second type doped quantum dot layer 132, and a metal top electrode 140 in this order. The left side of the figure is an equivalent circuit diagram of the imaging device, wherein the second photosensitive quantum dot layer 131 and the first second type doped quantum dot layer 132 are equivalent to the first second diode 130, the first second type doped quantum dot layer 132 and the first photosensitive quantum dot layer 121 are equivalent to the first diode 120, the first photosensitive quantum dot layer 121 and the second type doped quantum dot layer 132 are equivalent to the second diode 130, and the conduction directions of the first diode 120 and the second diode 130 are different. When the bias direction of the two ends of the imaging device is forward bias, the first second diode 130 and the second diode 130 are located in a reverse bias region, the two second diodes 130 are in a working state, and the imaging device is in a fusion detection working mode at this time; when the bias direction of the two ends of the imaging device is reverse bias, the middle first diode 120 is located in the reverse bias region, the first diode 120 is in the working state, and the imaging device is in the single-band detection working mode at this time. By modulating the bias direction, the switching between two detection modes of dual-band fusion and dual-band fusion can be realized.
Based on the same inventive concept, the embodiment of the present disclosure further provides a bias-modulated quantum dot imaging array, where the imaging array includes any of the above imaging devices, and the imaging device array arrangement has corresponding beneficial effects, and the same points may be understood with reference to the above description, and are not described in detail hereinafter.
In some embodiments, as shown in fig. 9, a schematic structural diagram of an imaging array provided in the embodiments of the present disclosure is shown. Referring to fig. 9, the imaging array further includes a pixel electrode 150 and a common ground electrode 160; the common ground electrode 160 is a full-surface electrode, and the stacked photodiodes are located between the common ground electrode 160 and the pixel electrode 150; or the common ground electrode is a grid electrode, each pixel electrode is positioned in the grid of the grid electrode, and the grid electrode and the pixel electrode are positioned on the same side of the stacked photodiodes.
The pixel electrode 150 is formed of one or more of Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Indium Gallium Oxide (IGO), Gallium Zinc Oxide (GZO), zinc oxide (ZnO), indium oxide (In2O3), Aluminum Zinc Oxide (AZO), and a carbon nanotube.
Wherein, the common ground electrode is a grid electrode, and each pixel electrode 150 is respectively positioned in the grid of the grid electrode; since the pixel electrode is surrounded by the lattice of the grid-like common ground electrode, which corresponds to the pixel electrode being surrounded by the ground electrode on the circumference, the direction of the electric field directed from the pixel electrode to the ground electrode is directed divergently from the pixel electrode to the ground electrode on the circumference thereof.
The common ground electrode 160 is one of gold (Au), silver (Ag), aluminum (Al), nickel (Ni), and nichrome electrodes, or other conductive materials known to those skilled in the art, and is not limited thereto.
Exemplarily, as shown in fig. 9, the imaging array is, from bottom to top, a conductive substrate layer 110, a pixel electrode 150, a second photosensitive quantum dot layer 131, a first second type doped quantum dot layer 132, a first photosensitive quantum dot layer 121, a second type doped quantum dot layer 132, and a common ground electrode 160; the stacked photodiodes (including the second photosensitive quantum dot layer 131, the first second-type doped quantum dot layer 132, the first photosensitive quantum dot layer 121, and the second-type doped quantum dot layer 132) are located between the common ground electrode 160 and the pixel electrode 150; the common ground electrode 160 is a full-surface electrode, and is connected to the conductive base layer 110 and grounded.
The embodiment of the present disclosure also provides an imaging device, which includes any one of the above imaging arrays, and further includes an external power supply; the external power supply is used for supplying a first direction voltage or a second direction voltage to the imaging array; by modulating the bias direction of the external power supply, the switching between the two detection modes can be realized.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The foregoing are merely exemplary embodiments of the present disclosure, which enable those skilled in the art to understand or practice the present disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A bias-modulated quantum dot imaging device, comprising: the photodiode is made of quantum dot photosensitive materials and is arranged in a stacked mode;
the photodiode comprises at least one first diode and at least two second diodes, and the first diode and the second diode are sequentially arranged at intervals;
each first diode is conducted under a first direction voltage, and each second diode is conducted under a second direction voltage; the first direction voltage and the second direction voltage are respectively one of a forward direction voltage and a reverse direction voltage.
2. The imaging device according to claim 1, wherein response bands of all the first diodes are different from each other;
the response wave bands of all the second diodes are different.
3. The imaging device according to claim 1 or 2, wherein response bands of all the photodiodes are different from each other.
4. The imaging device according to claim 2, wherein the number of the second diodes is larger than the number of the first diodes;
for each first diode, the response waveband of one second diode is the same as that of the first diode.
5. The imaging device of claim 4, wherein the second diode having the same response band as the first diode is adjacent to the first diode.
6. The imaging device of claim 1, wherein the stacked diode is on a first type of conductive substrate;
the first diode comprises a first photosensitive quantum dot layer and a second type doped quantum dot layer which are arranged in a stacked mode; in the first diode, the first photosensitive quantum dot layer is positioned on one side of the second type doped quantum dot layer, which faces away from the first type conductive substrate;
the second diode comprises a second photosensitive quantum dot layer and another second type doped quantum dot layer which are stacked; in the second diode, the second photosensitive quantum dot layer is positioned on one side of the second type doped quantum dot layer facing the first type conductive substrate;
the first type and the second type are respectively one of a P type and an N type.
7. The imaging device of claim 6, wherein the same layer of second-type doped quantum dots is shared by adjacent first and second diodes.
8. A bias-modulated quantum dot imaging array comprising the imaging device of any one of claims 1-7;
the imaging devices are arranged in an array.
9. The imaging array of claim 8, further comprising a pixel electrode and a common ground electrode;
the common ground electrode is a full-face electrode, and the stacked photodiodes are positioned between the common ground electrode and the pixel electrode;
or the common ground electrode is a grid electrode, and each pixel electrode is respectively positioned in a grid of the grid electrode, and the grid electrode and the pixel electrode are positioned on the same side of the stacked photodiodes.
10. An imaging device comprising the imaging array of claim 8 or 9, further comprising an external power source;
the external power supply is used for providing the first direction voltage or the second direction voltage for the imaging array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220065312.0U CN217214721U (en) | 2022-01-11 | 2022-01-11 | Bias voltage modulation quantum dot imaging device, imaging array and imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220065312.0U CN217214721U (en) | 2022-01-11 | 2022-01-11 | Bias voltage modulation quantum dot imaging device, imaging array and imaging device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217214721U true CN217214721U (en) | 2022-08-16 |
Family
ID=82790820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220065312.0U Active CN217214721U (en) | 2022-01-11 | 2022-01-11 | Bias voltage modulation quantum dot imaging device, imaging array and imaging device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217214721U (en) |
-
2022
- 2022-01-11 CN CN202220065312.0U patent/CN217214721U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112055893B (en) | Display panel and manufacturing method thereof | |
| US11126274B2 (en) | Display apparatus | |
| KR101638974B1 (en) | Optical modulator, methods of manufacturing and operating the same and optical apparatus comprising optical modulator | |
| CN110366780B (en) | Photodetector array | |
| US20100044822A1 (en) | Luminous radiation colour photosensitive structure | |
| EP3151542B1 (en) | Multispectral imaging device for range estimation | |
| US10230016B2 (en) | Color imaging using array of wavelength-selective optoelectronic elements as light-field image or sensor | |
| KR102523974B1 (en) | Photoelelctronic device including charge barrier | |
| US20130043372A1 (en) | Multi-Band Position Sensitive Imaging Arrays | |
| EP1961048A2 (en) | Multi colour photon detectors | |
| US20110101483A1 (en) | Two colour photon detector | |
| Li et al. | A filterless organic photodetector electrically switchable between visible and infrared detection | |
| CN114520243B (en) | Infrared focal plane detector and preparation method thereof | |
| CN217214719U (en) | Multiband super-pixel infrared focal plane detector | |
| US20160118444A1 (en) | Organic p-n junction based infrared detection device and manufacturing method thereof and infrared image detector using same | |
| CN217214721U (en) | Bias voltage modulation quantum dot imaging device, imaging array and imaging device | |
| KR101786765B1 (en) | Nanostructure optoelectronic device having sidewall electrical contact | |
| US9685477B2 (en) | Two-terminal multi-mode detector | |
| CN105487724B (en) | Display device, method of operating the same, and method of manufacturing optical sensing array therein | |
| CN114551486A (en) | Imaging device, manufacturing method thereof, imaging array and manufacturing method thereof | |
| CN108230930B (en) | Display panel, driving method thereof and display device | |
| TWI703716B (en) | Image sensor | |
| EP3792975A1 (en) | Display apparatus | |
| CN111512445A (en) | Image sensor with a plurality of pixels | |
| US20230128236A1 (en) | Photodiode and electronic device including the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |