CN216488025U

CN216488025U - High temperature resistant chip in a poor light

Info

Publication number: CN216488025U
Application number: CN202121470158.7U
Authority: CN
Inventors: 肖华军
Original assignee: Huangshan Akent Semiconductor Technology Co ltd
Current assignee: Huangshan Akent Semiconductor Technology Co ltd
Priority date: 2021-06-30
Filing date: 2021-06-30
Publication date: 2022-05-10
Anticipated expiration: 2031-06-30

Abstract

The utility model discloses a high-temperature-resistant backlight chip which comprises a chip base, a first supporting block, a sealing plate and a radiating fin, wherein a first salient point is connected to the upper side of the chip base in a sticking mode, a P electrode is connected to the upper side of the first salient point in a sticking mode, a second heat-conducting fin is connected to the bottom of the P electrode in a sticking mode, P-type gallium nitride is connected to the upper side of the P electrode in a sticking mode, a multi-quantum well is connected to the upper side of the P-type gallium nitride in a sticking mode, N-type gallium nitride is connected to the upper side of the multi-quantum well in a sticking mode, and a semiconductor wafer is connected to the upper side of the N-type gallium nitride. This high temperature resistant chip in a poor light, the first conducting strip that accessible graphite alkene was made and second conducting strip can be siphoned away the heat that this chip in a poor light produced, transmit the heat to the fin top in the shrouding outside by the heat-conducting plate after that, avoid the inside condition emergence that produces the higher temperature influence chip of this chip to improve this chip in a poor light's high temperature resistant ability, make this chip in a poor light's practicality higher.

Description

High temperature resistant chip in a poor light

Technical Field

The utility model relates to the technical field of backlight chips, in particular to a high-temperature-resistant backlight chip.

Background

The backlight chip is a semiconductor device, can convert annual energy into light energy, can be applied to a lighting device or an LED lamp, has good lighting performance or decorative effect, is widely selected by people to be used in various industries, but the backlight chip on the current market still has the following problems:

1. when the existing backlight chip is installed and used, higher temperature can not be easily generated inside the chip, the using effect of the chip is easily deteriorated, and even the chip is burnt, so that the high-temperature resistant effect of the backlight chip is deteriorated, and the practicability of the chip is not improved;

2. conventional backlight chip, in the installation use, to the protection effect of chip relatively poor, can not effectual protection chip not receive the loss when receiving vibrations to reduce the security of chip, be unfavorable for backlight chip's long-term use.

Aiming at the problems, the novel design is carried out on the basis of the original backlight chip.

SUMMERY OF THE UTILITY MODEL

The utility model aims to provide a high-temperature-resistant backlight chip, and aims to solve the problems that the conventional high-temperature-resistant backlight chip in the market, which is proposed in the background art, cannot generate high temperature easily inside the chip when being installed and used, so that the using effect of the chip is easily poor, and even the chip is burnt, so that the high-temperature-resistant effect of the backlight chip is poor, the practicability of the chip is not improved, the protection effect on the chip is poor in the installation and use process, and the chip cannot be effectively protected from being lost when being vibrated, so that the safety of the chip is reduced, and the long-term use of the backlight chip is not facilitated.

In order to achieve the purpose, the utility model provides the following technical scheme: the utility model provides a high temperature resistant chip in a poor light, includes chip base, first supporting shoe, shrouding and fin, the top of chip base is pasted and is connected with first bump, and first bump prevents that the top is pasted and is connected with the P electrode to the bottom of P electrode is pasted and is connected with the second conducting strip, the top of P electrode is pasted and is connected with P type gallium nitride, and the top of P type gallium nitride is connected with the multiple quantum well, the top of multiple quantum well is pasted and is connected with N type gallium nitride, and the top of N type gallium nitride is connected with semiconductor wafer, the top left side of chip base is pasted and is connected with first supporting shoe, and the top middle part of chip base is connected with the second supporting shoe, the shrouding of chip base, and the outside of shrouding is connected with the fin.

Preferably, the lower part of the left side of the N-type gallium nitride is pasted and connected with an N electrode, a second salient point is pasted and connected with the lower part of the N electrode, and the second salient point and the chip base form a vertical structure.

Preferably, the first supporting block is connected with the N electrode in a sticking mode, arc-shaped grooves are uniformly formed above the first supporting block, and the shapes of the upper parts of the first supporting block and the second supporting block are the same.

Preferably, the side surface of the second supporting block is connected with a first heat-conducting fin in a sticking manner, the first heat-conducting fin is arranged above the chip base in a staggered manner, and the outer side of the first heat-conducting fin is connected with a heat-conducting plate in a sticking manner.

Preferably, the second supporting blocks are symmetrically arranged above the chip base, the second supporting blocks and the first supporting blocks are made of the same material, and the first supporting blocks, the second supporting blocks and the chip base are arranged in an integrated structure.

Preferably, the heat-conducting plate through connection is in the shrouding, and the outside of heat-conducting plate closely laminates with the inboard of fin to the side of heat-conducting plate is "L" shape structure setting, and the heat-conducting plate is even symmetric distribution setting about the axis of chip base moreover.

Compared with the prior art, the utility model has the beneficial effects that: the high-temperature resistant backlight chip comprises a substrate,

1. the first heat conducting fin and the second heat conducting fin made of graphene can absorb heat generated by the backlight chip, and then the heat conducting plate transmits the heat to the upper part of the radiating fin outside the sealing plate, so that the situation that the chip is influenced by higher temperature generated inside the chip is avoided, the high temperature resistance of the backlight chip is improved, and the practicability of the backlight chip is higher;

2. the first supporting block and the second supporting block which are made of polyethylene support the inside of the chip, and under the action of the arc-shaped grooves formed above the first supporting block and the second supporting block, the anti-seismic effect of the backlight chip is better, so that the chip is more stable and safer when in use, and the long-term use of the backlight chip is facilitated.

Drawings

FIG. 1 is a schematic view of the overall front view of the present invention;

FIG. 2 is a schematic overall side-view cross-sectional configuration of the present invention;

FIG. 3 is a schematic view of a connection structure of a chip base and a first supporting block according to the present invention;

FIG. 4 is an enlarged view of the structure at A in FIG. 2 according to the present invention.

In the figure: 1. a chip base; 2. a first bump; 3. a P electrode; 4. p-type gallium nitride; 5. A multiple quantum well; 6. n-type gallium nitride; 7. an N electrode; 8. a second bump; 9. a first support block; 10. a second support block; 11. a first thermally conductive sheet; 12. a second thermally conductive sheet; 13. a heat conducting plate; 14. closing the plate; 15. a heat sink; 16. a semiconductor wafer.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Referring to fig. 1-4, the present invention provides a technical solution: a high temperature resistant backlight chip comprises a chip base 1, a first supporting block 9, a sealing plate 14 and a radiating fin 15, in order to make the backlight chip capable of resisting high temperature, a first salient point 2 is pasted and connected on the upper part of the chip base 1, a P electrode 3 is pasted and connected on the upper part of the first salient point 2, a second heat conducting fin 12 is pasted and connected on the bottom of the P electrode 3, the heat generated by the work of the P electrode 3 can be conducted away, the normal and continuous work of the P electrode 3 is favorably kept, a P type gallium nitride 4 is pasted and connected on the upper part of the P electrode 3, a multi-quantum well 5 is connected on the upper part of the P type gallium nitride 4, an N type gallium nitride 6 is pasted and connected on the upper part of the N type gallium nitride 6, a semiconductor wafer 16 is connected on the upper part of the N type gallium nitride 6, an N electrode 7 is pasted and connected on the lower part of the left side of the N type gallium nitride 6, and the lower part of the N electrode 7 is adhered and connected with a second salient point 8, the second salient point 8 and the chip base 1 form a vertical structure, gaps can be generated on two sides of the second salient point 8, which is beneficial to improving the heat conduction effect of the first heat conducting fin 11, a sealing plate 14 of the chip base 1 and the outer side of the sealing plate 14 are connected with radiating fins 15, the chip can be reinforced and sealed through the sealing plate 14 symmetrically arranged above the chip base 1, the stability of the chip can be improved, the chip is not easy to deform, the side surface of the second supporting block 10 is adhered and connected with the first heat conducting fin 11, the first heat conducting fins 11 are arranged above the chip base 1 in a staggered distribution manner, the outer side of the first heat conducting fin 11 is adhered and connected with a heat conducting plate 13, the first heat conducting fins 11 are arranged above the chip base 1 in a staggered distribution manner, can evenly lead away fast the temperature that this chip of being shaded inside operation produced, reduce the operational risk that this chip high temperature produced, heat-conducting plate 13 through connection is in shrouding 14, and the outside of heat-conducting plate 13 is closely laminated with the inboard of fin 15, and the side of heat-conducting plate 13 is "L" shape structure setting, and heat-conducting plate 13 is even symmetric distribution setting about the axis of chip base 1, after the heat that first conducting plate 11 absorbed the chip and produced, the heat of first conducting plate 11 top can be led to fin 15 top by even symmetric distribution's heat-conducting plate 13, set up through "L" shape structure of heat-conducting plate 13, can improve the heat conduction efficiency of heat-conducting plate 13 to fin 15, thereby make the high temperature resistant effect of this chip better, be favorable to the continuous operation of this chip and improve the practicality of this chip.

Referring to fig. 1-3, in order to make the chip more stable and safe, a first supporting block 9 is adhesively connected to the left side of the upper portion of the chip base 1, a second supporting block 10 is connected to the middle portion of the upper portion of the chip base 1, the first supporting block 9 is connected to the N electrode 7 in an adhesive manner, arc-shaped grooves are uniformly formed above the first supporting block 9, the first supporting block 9 and the second supporting block 10 have the same shape, the second supporting block 10 is symmetrically arranged above the chip base 1, the second supporting block 10 is made of the same material as the first supporting block 9, the second supporting block 10 and the chip base 1 are integrally formed, the stability of the chip can be improved by the second supporting block 10 symmetrically arranged above the chip base 1, and since the second supporting block 10 is made of the same material as the first supporting block 9, the anti-seismic effect of the chip can be better through the arc-shaped grooves uniformly formed above the first supporting block 9 and the second supporting block 10, so that the chip is more stable and safe after being installed, and the long-term use work of the backlight chip is facilitated.

The working principle is as follows: according to fig. 1-4, when the backlight chip is installed and used, because the second conducting strip 12 and the first conducting strips 11 distributed in a staggered manner are arranged above the chip base 1, heat generated by the operation inside the backlight chip can be uniformly and quickly absorbed by the first conducting strips 11 and the second conducting strips 12, so that the using effect of the chip is better, then the heat generated by the chip absorbed by the first conducting strips 11 and the second conducting strips 12 can be transmitted to the upper part of the radiating fins 15 by the heat conducting plates 13 of the L-shaped structures uniformly and symmetrically distributed on the outer sides of the first conducting strips 11, and the temperature heat inside the chip is radiated to the outside through the radiating fins 15, so that the continuous heat conduction of the first conducting strips 11 and the second conducting strips 12 is ensured, the high-temperature resistant effect of the chip is better, and the practicability of the chip is improved;

according to fig. 1-3, after the chip is mounted, the interior of the chip can be more stable under the action of the first supporting block 9 and the second supporting block 10 which are symmetrically arranged above the chip base 1, and the risk of loosening of the interior of the chip can be reduced.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.

Claims

1. The utility model provides a high temperature resistance chip in a poor light, includes chip base (1), first supporting block (9), shrouding (14) and fin (15), its characterized in that: a first salient point (2) is pasted and connected on the upper part of the chip base (1), a P electrode (3) is pasted and connected on the upper part of the first salient point (2), the bottom of the P electrode (3) is connected with a second heat-conducting fin (12) in a sticking way, the upper part of the P electrode (3) is connected with a P-type gallium nitride (4) in a sticking way, and the upper part of the P-type gallium nitride (4) is connected with a multi-quantum well (5), the upper part of the multi-quantum well (5) is connected with an N-type gallium nitride (6) in a sticking way, a semiconductor wafer (16) is connected above the N-type gallium nitride (6), a first supporting block (9) is adhered and connected on the left side above the chip base (1), and the middle part of the upper part of the chip base (1) is connected with a second supporting block (10), the chip base is characterized in that a sealing plate (14) of the chip base (1) is arranged, and a cooling fin (15) is connected to the outer side of the sealing plate (14).

2. The high temperature resistant backlight chip of claim 1, wherein: the lower portion of the left side of the N-type gallium nitride (6) is connected with an N electrode (7) in a sticking mode, a second salient point (8) is connected to the lower portion of the N electrode (7) in a sticking mode, and the second salient point (8) and the chip base (1) form a vertical structure.

3. The high temperature resistant backlight chip of claim 1, wherein: the first supporting block (9) is connected with the N electrode (7) in a sticking mode, arc-shaped grooves are uniformly formed in the upper portion of the first supporting block (9), and the shapes of the upper portions of the first supporting block (9) and the second supporting block (10) are the same.

4. The high temperature resistant backlight chip of claim 1, wherein: the side of the second supporting block (10) is connected with a first heat-conducting fin (11) in a sticking mode, the first heat-conducting fins (11) are distributed above the chip base (1) in a staggered mode, and the outer side of each first heat-conducting fin (11) is connected with a heat-conducting plate (13) in a sticking mode.

5. The high temperature resistant backlight chip of claim 1, wherein: the second supporting blocks (10) are symmetrically arranged above the chip base (1), the second supporting blocks (10) are made of the same material as the first supporting blocks (9), and the first supporting blocks (9), the second supporting blocks (10) and the chip base (1) form an integrated structure.

6. The high temperature resistant backlight chip of claim 4, wherein: heat-conducting plate (13) through connection is in shrouding (14), and the outside of heat-conducting plate (13) closely laminates with the inboard of fin (15) to the side of heat-conducting plate (13) is "L" shape structure setting, and heat-conducting plate (13) is even symmetric distribution setting about the axis of chip base (1) moreover.