CN216311765U

CN216311765U - Low-loss silicon carbide diode

Info

Publication number: CN216311765U
Application number: CN202122530245.3U
Authority: CN
Inventors: 何海洋; 胡健峰; 彭强
Original assignee: Wuxi Ciao Microelectronics Technology Co ltd
Current assignee: Wuxi Ciao Microelectronics Technology Co ltd
Priority date: 2021-10-20
Filing date: 2021-10-20
Publication date: 2022-04-15
Anticipated expiration: 2031-10-20

Abstract

The utility model belongs to the technical field of diodes, and particularly relates to a low-loss silicon carbide diode which comprises an L-shaped base, wherein a placing groove is formed in the inner bottom wall of the L-shaped base, two groups of conductive pin assemblies are symmetrically arranged on the inner bottom wall of the placing groove, a silicon carbide chip is arranged in each conductive pin assembly, a heat dissipation assembly is arranged at the top of the silicon carbide chip and comprises a concave heat dissipation plate, the concave heat dissipation plate is connected to the inner bottom wall of the L-shaped base, heat dissipation fins are symmetrically arranged on two sides of the concave heat dissipation plate, and the inner top wall of the concave heat dissipation plate is attached to the top of the silicon carbide chip. According to the utility model, the concave heat dissipation plate is contacted with the top of the silicon carbide chip, and the heat dissipation plates are positioned on two sides of the concave heat dissipation plate, so that when the silicon carbide chip generates heat during working, the concave heat dissipation plate and the heat dissipation plates can effectively dissipate the heat of the silicon carbide chip, and the silicon carbide chip can be ensured to realize excellent performance with low loss.

Description

Low-loss silicon carbide diode

Technical Field

The utility model relates to the technical field of diodes, in particular to a low-loss silicon carbide diode.

Background

The silicon carbide diode has two packaging forms, namely a lead type packaging form and a patch type packaging form, and the structure of the patch type packaging is more and more widely applied along with the prevalence of flat light electronic products.

In the prior art, the silicon carbide diode generates heat in the working process, the power loss generated by the silicon carbide diode working at a high temperature state is large, particularly the power loss formed by a diode packaging device packaged with more than one silicon carbide diode chip is more serious, and therefore, the silicon carbide diode with low loss is provided.

SUMMERY OF THE UTILITY MODEL

Technical problem to be solved

Aiming at the defects of the prior art, the utility model provides a low-loss silicon carbide diode, which solves the problem that the silicon carbide diode generates heat in the working process, so that the power loss is large.

(II) technical scheme

The utility model specifically adopts the following technical scheme for realizing the purpose:

the utility model provides a low-loss silicon carbide diode, includes L type base, the inner diapire of L type base is equipped with the standing groove, the inner diapire symmetry of standing groove is equipped with two sets of electrically conductive stitch subassemblies, be equipped with silicon carbide chip among the electrically conductive stitch subassembly, silicon carbide chip's top is equipped with radiator unit, radiator unit includes concave type heating panel, concave type heating panel is connected on the interior diapire of L type base, the bilateral symmetry of concave type heating panel is equipped with the fin, the interior roof of concave type heating panel is laminated with silicon carbide chip's top each other, the top laminating of concave type heating panel has the insulating closing cap of concave type form, insulating closing cap is connected on the interior diapire of L type base.

Further, electrically conductive stitch subassembly includes L type fixed plate, the top of L type fixed plate is connected with the bottom of carborundum chip, L type fixed plate is connected in the interior diapire of L type base, one side of L type fixed plate is connected with the holding down plate, the holding down plate keeps parallel with the bottom of L type base.

Furthermore, the openings of the concave heat dissipation plate and the insulating sealing cover are both vertical and downward, and the top of the insulating sealing cover and the top of the L-shaped base keep the same horizontal plane.

Furthermore, the bottom of the insulating sealing cover is symmetrically connected with two clamping blocks, the clamping blocks are located between the inner side walls of the L-shaped fixing plates and the L-shaped base, a sealing plate is arranged between the L-shaped fixing plates in a sealing mode, and the sealing plate is connected to the bottom of the insulating sealing cover.

Furthermore, the insulating sealing covers are hermetically clamped at two sides of the concave heat dissipation plate, and the insulating sealing covers are mutually kept on the same horizontal plane corresponding to one side outside the L-shaped base.

Furthermore, the top of the insulating sealing cover and the inner bottom wall of the L-shaped base are both provided with matched threaded holes, and the inner wall of each threaded hole is in threaded connection with a positioning screw rod.

(III) advantageous effects

Compared with the prior art, the utility model provides a low-loss silicon carbide diode, which has the following beneficial effects:

according to the utility model, the concave heat dissipation plate is contacted with the top of the silicon carbide chip, and the heat dissipation plates are positioned on two sides of the concave heat dissipation plate, so that when the silicon carbide chip generates heat during working, the concave heat dissipation plate and the heat dissipation plates can effectively dissipate the heat of the silicon carbide chip, and the silicon carbide chip can be ensured to realize excellent performance with low loss.

Drawings

FIG. 1 is an overall exploded view of the present invention;

FIG. 2 is a top view of the L-shaped base of the present invention coupled to an insulating cover;

FIG. 3 is a schematic view of the connection structure of the L-shaped base and the conductive pin assembly according to the present invention.

In the figure: 1. an L-shaped base; 2. a placement groove; 3. a conductive pin assembly; 301. an L-shaped fixing plate; 302. a lower pressing plate; 4. a silicon carbide chip; 5. a heat dissipating component; 501. a concave heat dissipation plate; 502. a heat sink; 6. an insulating cover; 7. a clamping block; 8. closing the plate; 9. a threaded hole; 10. and (5) positioning the screw rod.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Examples

As shown in fig. 1-3, a low-loss silicon carbide diode according to an embodiment of the present invention includes an L-shaped base 1, a placement groove 2 is disposed on an inner bottom wall of the L-shaped base 1, two sets of conductive pin assemblies 3 are symmetrically disposed on the inner bottom wall of the placement groove 2, a silicon carbide chip 4 is disposed in each conductive pin assembly 3, a heat dissipation assembly 5 is disposed on a top of the silicon carbide chip 4, the heat dissipation assembly 5 includes a concave heat dissipation plate 501, the concave heat dissipation plate 501 is connected to an inner bottom wall of the L-shaped base 1, heat dissipation plates 502 are symmetrically disposed on two sides of the concave heat dissipation plate 501, an inner top wall of the concave heat dissipation plate 501 and a top of the silicon carbide chip 4 are attached to each other through the concave heat dissipation plate 501, the heat dissipation plates 502 are disposed on two sides of the concave heat dissipation plate 501, and the heat dissipation assembly 5 with such unique properties can effectively improve the heat dissipation performance of the silicon carbide chip 4, therefore, when the silicon carbide chip 4 works, the low-loss excellent performance can be realized, the concave heat dissipation plate 501 is attached with the concave insulating sealing cover 6 at the top, and the insulating sealing cover 6 is connected to the inner bottom wall of the L-shaped base 1.

As shown in fig. 3, in some embodiments, the conductive pin assembly 3 includes an L-shaped fixing plate 301, a top of the L-shaped fixing plate 301 is connected to a bottom of the silicon carbide chip 4, the L-shaped fixing plate 301 is connected to an inner bottom wall of the L-shaped base 1, one side of the L-shaped fixing plate 301 is connected to a lower pressing plate 302, the lower pressing plate 302 is parallel to the bottom of the L-shaped base 1, wherein an upper and lower L-shaped structure is formed between the L-shaped fixing plate 301 and the lower pressing plate 302, so as to improve the bending resistance of the conductive pin assembly 3, and ensure that the conductive pin assembly 3 has a longer service life.

As shown in fig. 1, in some embodiments, the openings of the concave heat sink 501 and the insulating cover 6 are both vertically downward, the top of the insulating cover 6 and the top of the L-shaped base 1 maintain the same horizontal plane, because the openings of the concave heat sink 501 and the insulating cover 6 are both vertically downward, the concave heat sink 501 can be in close contact with the silicon carbide chip 4, and the heat dissipation effect of the silicon carbide chip 4 can be improved, and the insulating cover 6 can be in contact with the concave heat sink 501, so that the connection between the insulating cover 6 and the L-shaped base 1 is more compact during packaging.

As shown in fig. 1, in some embodiments, two fixture blocks 7 are symmetrically connected to the bottom of the insulating cover 6, the fixture block 7 is located between the L-shaped fixing plate 301 and the inner sidewall of the L-shaped base 1, a sealing plate 8 is hermetically disposed between the two L-shaped fixing plates 301, the sealing plate 8 is connected to the bottom of the insulating cover 6, the fixture block 7 is designed according to a gap reserved between the L-shaped fixing plate 301 and the inner sidewall of the L-shaped base 1, the sealing plate 8 is designed according to a distance between the two L-shaped fixing plates 301, when the insulating cover 6 is fixed between two sides of the two concave heat dissipation plates 501, it can be ensured that the insulating cover 6 is hermetically connected to the L-shaped base 1, and the silicon carbide chip 4 inside can be effectively protected.

As shown in fig. 2, in some embodiments, the insulating covers 6 are sealingly connected to two sides of the concave heat sink 501, and one sides of the insulating covers 6 corresponding to the outside of the L-shaped base 1 keep the same horizontal plane, so that the concave heat sink 501 is located at the center of the inner bottom wall of the L-shaped base 1, so that the same gap is left between the two sides of the L-shaped base 1 and the concave heat sink 501, and the insulating covers 6 are designed according to the position of the concave heat sink 501 in the L-shaped base 1, so as to ensure that the insulating covers 6 can be connected between the two sides of the concave heat sink 501.

As shown in fig. 2, in some embodiments, the top of the insulating cover 6 and the inner bottom wall of the L-shaped base 1 are both provided with a matching threaded hole 9, the inner wall of the threaded hole 9 is connected with a positioning screw rod 10 in a threaded manner, and the insulating cover 6 can be conveniently mounted and dismounted on and from the L-shaped base 1 by matching the positioning screw rod 10 with the threaded hole 9.

Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the utility model. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A low-loss silicon carbide diode comprises an L-shaped base (1), and is characterized in that: the utility model discloses a solar energy heat dissipation device, including L type base (1), inner diapire of L type base (1) is equipped with standing groove (2), the inner diapire symmetry of standing groove (2) is equipped with two sets of electrically conductive stitch subassembly (3), be equipped with silicon carbide chip (4) in electrically conductive stitch subassembly (3), the top of silicon carbide chip (4) is equipped with radiator unit (5), radiator unit (5) are including concave type heating panel (501), concave type heating panel (501) are connected on the interior diapire of L type base (1), the bilateral symmetry of concave type heating panel (501) is equipped with fin (502), the interior roof of concave type heating panel (501) is laminated with the top of silicon carbide chip (4) each other, the top laminating of concave type heating panel (501) has insulating closing cap (6) of concave type form, insulating closing cap (6) are connected on the interior diapire of L type base (1).

2. A low loss silicon carbide diode according to claim 1 wherein: electrically conductive stitch subassembly (3) are including L type fixed plate (301), the top of L type fixed plate (301) is connected with the bottom of carborundum chip (4), L type fixed plate (301) are connected in the inner diapire of L type base (1), one side of L type fixed plate (301) is connected with holding down plate (302), holding down plate (302) are parallel with the bottom of L type base (1).

3. A low loss silicon carbide diode according to claim 1 wherein: the openings of the concave heat dissipation plate (501) and the insulating sealing cover (6) are both vertical and downward, and the top of the insulating sealing cover (6) and the top of the L-shaped base (1) keep the same horizontal plane.

4. A low loss silicon carbide diode according to claim 1 wherein: the bottom symmetric connection of insulating closing cap (6) has two fixture blocks (7), fixture block (7) are located between the inside wall of L type fixed plate (301) and L type base (1), two sealed shrouding (8) that are equipped with between L type fixed plate (301), the bottom at insulating closing cap (6) is connected in shrouding (8).

5. A low loss silicon carbide diode according to claim 1 wherein: the insulating sealing covers (6) are hermetically clamped at two sides of the concave heat dissipation plate (501), and the insulating sealing covers (6) are opposite to one side of the outer part of the L-shaped base (1) and mutually keep the same horizontal plane.

6. A low loss silicon carbide diode according to claim 1 wherein: the top of the insulating sealing cover (6) and the inner bottom wall of the L-shaped base (1) are both provided with screw holes (9) matched with each other, and the inner wall of each screw hole (9) is in threaded connection with a positioning screw rod (10).