CN216134649U - Low-stress ceramic packaging substrate for metal dam - Google Patents

Low-stress ceramic packaging substrate for metal dam Download PDF

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Publication number
CN216134649U
CN216134649U CN202122063949.4U CN202122063949U CN216134649U CN 216134649 U CN216134649 U CN 216134649U CN 202122063949 U CN202122063949 U CN 202122063949U CN 216134649 U CN216134649 U CN 216134649U
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China
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layer
dam
ceramic
main part
metal
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CN202122063949.4U
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Chinese (zh)
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何浩波
郭晓泉
孔仕进
康为
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Jiangxi Jinghong New Material Technology Co ltd
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Jiangxi Jinghong New Material Technology Co ltd
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Abstract

The utility model discloses a low-stress ceramic packaging substrate for a metal dam, which comprises a ceramic base layer, a front circuit layer, a back circuit layer and a metal dam, wherein the front circuit layer is arranged on the ceramic base layer; the front surface circuit layer is formed on the front surface of the ceramic base layer; the back circuit layer is formed on the back of the ceramic base layer; the metal box dam is formed on the front surface of the ceramic base layer, the metal box dam is formed into an accommodating cavity, and the metal box dam comprises a bottom layer and a main body layer integrally extending upwards from the surface of the bottom layer. Through designing into the back taper with the main part layer, the width of bottom is greater than the width on main part layer, the surface runs through the first breach that is formed with a plurality of intervals and arranges about the outer peripheral edges of deuterogamy bottom, each first breach all is located the outside on main part layer, the inside wall and the lateral wall on main part layer are all concave to be equipped with the second breach, improve the cold and hot impact resistance ability of product, reduce and disperse the stress of box dam to ceramic substrate, thereby prevent ceramic substrate from the blind crack, and then prolong the life-span of UVC module and improve the reliability of UVC module.

Description

Low-stress ceramic packaging substrate for metal dam
Technical Field
The utility model relates to the technical field of substrates, in particular to a low-stress ceramic packaging substrate for a metal box dam.
Background
Along with the deepening of medical sterilization industry gradually, the service environment is diversified more, and the UVC sterilization packaging module has higher and higher requirements on heat dissipation of the ceramic base layer and cold and hot impact resistance.
The traditional encapsulation substrate for the UVC cancels the traditional Molidng process for anti-aging, adopts metal dam encapsulation, can avoid the aging problem, but the thermal expansion coefficient of metal and ceramic have great difference, and the stress of a base layer is overlarge in the encapsulation process, so that the base layer is dark and cracked, thereby the service life and the reliability of the UVC module are reduced. At present, how to reduce the stress of the ceramic substrate with the box dam structure and improve the cold and hot impact resistance of the ceramic substrate becomes a difficulty for improving the packaging yield of the UVC sterilization module. Therefore, there is a need for an improved metal dam package substrate.
SUMMERY OF THE UTILITY MODEL
In view of the above, the present invention is directed to the defects in the prior art, and a main object of the present invention is to provide a low-stress metal dam ceramic package substrate, which can effectively solve the problem that the lifetime and reliability of the UVC module are reduced due to the base layer being cracked due to an excessive stress of the base layer in the packaging process of the conventional metal dam ceramic package substrate.
In order to achieve the purpose, the utility model adopts the following technical scheme:
a low-stress ceramic packaging substrate of a metal dam comprises a ceramic base layer, a front circuit layer, a back circuit layer and the metal dam;
the upper and lower surfaces of the ceramic base layer are penetrated and formed with a via hole, and a via post is formed in the via hole;
the front surface circuit layer is formed on the front surface of the ceramic base layer and is in conduction connection with the upper end of the conduction column; the back circuit layer is formed on the back of the ceramic base layer and is in conduction connection with the lower end of the conduction column;
this metal box dam shaping is in ceramic substrate's front and be located the periphery on positive circuit layer, the metal box dam encloses the configuration and becomes a holding chamber, the metal box dam including the bottom with in the main part layer that the bottom surface upwards an organic whole extends, the width of this bottom is greater than the width on main part layer, the outer peripheral edge of bottom is run through from top to bottom the surface and is formed with the first breach that a plurality of intervals were arranged, each first breach all is located the outside on main part layer, this main part layer becomes the back taper, the inside wall and the lateral wall on main part layer are all concave to be equipped with the second breach.
As a preferable scheme, the back surface of the ceramic base layer is formed with two heat dissipation layers, the two back surface circuit layers are respectively located at two sides of the heat dissipation layer, and ink is filled between the two back surface circuit layers and the heat dissipation layer to form a solder mask.
Preferably, the via hole is a vertical via hole.
Preferably, the first notch is a circular hole.
As a preferred scheme, the second gap is an annular groove, and the second gap is a plurality of gaps arranged at intervals up and down.
Preferably, the inner periphery of the surface of the main body layer is recessed to form a embedding groove.
Compared with the prior art, the utility model has obvious advantages and beneficial effects, and specifically, the technical scheme includes that:
through designing into the back taper with the main part layer, the width of bottom is greater than the width on main part layer, the surface runs through the first breach that is formed with a plurality of intervals and arranges about the outer peripheral edges of deuterogamy bottom, each first breach all is located the outside on main part layer, the inside wall and the lateral wall on main part layer are all concave to be equipped with the second breach, improve the cold and hot impact resistance ability of product, reduce and disperse the stress of box dam to ceramic substrate, thereby prevent ceramic substrate from the blind crack, and then prolong the life-span of UVC module and improve the reliability of UVC module.
To more clearly illustrate the structural features and effects of the present invention, the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
Drawings
FIG. 1 is a cross-sectional view of a preferred embodiment of the present invention;
FIG. 2 is a top view of the preferred embodiment of the present invention.
The attached drawings indicate the following:
10. ceramic base layer 11, via hole
12. Conductive via 20, front surface circuit layer
30. Back side circuit layer 40 and metal dam
401. Bottom layer of the accommodation chamber 41
411. First gap 42, body layer
421. Second notch 422, embedding slot
50. Heat dissipation layer 60, solder mask.
Detailed Description
Referring to fig. 1 to 2, a specific structure of a preferred embodiment of the present invention is shown, which includes a ceramic substrate 10, a front circuit layer 20, a back circuit layer 30 and a metal dam 40.
A through hole 11 is formed through the upper and lower surfaces of the ceramic substrate 10, and a conductive via 12 is formed in the through hole 11; in this embodiment, a heat dissipation layer 50 is formed on the back surface of the ceramic substrate 11, and the via hole 11 is a vertical via hole.
The front surface circuit layer 20 is formed on the front surface of the ceramic substrate 10 and is conductively connected with the upper end of the conductive via 12; the back circuit layer 30 is formed on the back of the ceramic substrate 10 and is conductively connected with the lower end of the conductive via 12; in the present embodiment, there are two back surface circuit layers 30, which are respectively located on two sides of the heat dissipation layer 50, and the solder mask layer 60 is formed between the two back surface circuit layers 30 and the heat dissipation layer 50 by filling ink.
This metal box dam 40 shaping is in the front of ceramic substrate 10 and is located the periphery of positive circuit layer 20, metal box dam 40 encloses and forms a holding chamber 401, metal box dam 40 is including bottom 41 and the main part layer 42 that upwards extends in bottom 41 surface an organic whole, the width of this bottom 41 is greater than the width of main part layer 42, the outer peripheral edge upper and lower surface of bottom 41 runs through and is formed with the first breach 411 that a plurality of intervals were arranged, each first breach 411 all is located the outside of main part layer 42, this main part layer 42 becomes the back taper form, the inside wall and the lateral wall of main part layer 42 all are equipped with second breach 421 in the concave. In this embodiment, the first notch 411 is a circular hole, the second notch 421 is an annular groove, the second notches 421 are a plurality of notches arranged at intervals up and down, and the inner periphery of the surface of the main body layer 42 is recessed to form an embedding groove 422.
The manufacturing method of the embodiment is detailed as follows:
firstly, a via hole 11 penetrating through the upper and lower surfaces is formed in a ceramic base layer 10, a via 12 is formed in the via hole 11, then a front surface circuit layer 20 is formed on the front surface of the ceramic base layer 10, a back surface circuit layer 30 and a heat dissipation layer 50 are formed on the back surface, then a metal dam 30 is formed on the front surface of the ceramic base layer 10, the metal dam 30 is located on the periphery of the front surface circuit layer 20, and finally, ink is filled between the two back surface circuit layers 30 and the heat dissipation layer 50 to form a solder mask 60.
The design of the utility model is characterized in that:
through designing into the back taper with the main part layer, the width of bottom is greater than the width on main part layer, the surface runs through the first breach that is formed with a plurality of intervals and arranges about the outer peripheral edges of deuterogamy bottom, each first breach all is located the outside on main part layer, the inside wall and the lateral wall on main part layer are all concave to be equipped with the second breach, improve the cold and hot impact resistance ability of product, reduce and disperse the stress of box dam to ceramic substrate, thereby prevent ceramic substrate from the blind crack, and then prolong the life-span of UVC module and improve the reliability of UVC module.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the technical scope of the present invention, so that any minor modifications, equivalent changes and modifications made to the above embodiment according to the technical spirit of the present invention are within the technical scope of the present invention.

Claims (6)

1. The utility model provides a ceramic package substrate of metal box dam of low stress which characterized in that: comprises a ceramic base layer, a front circuit layer, a back circuit layer and a metal dam;
the upper and lower surfaces of the ceramic base layer are penetrated and formed with a via hole, and a via post is formed in the via hole;
the front surface circuit layer is formed on the front surface of the ceramic base layer and is in conduction connection with the upper end of the conduction column; the back circuit layer is formed on the back of the ceramic base layer and is in conduction connection with the lower end of the conduction column;
this metal box dam shaping is in ceramic substrate's front and be located the periphery on positive circuit layer, the metal box dam encloses the configuration and becomes a holding chamber, the metal box dam including the bottom with in the main part layer that the bottom surface upwards an organic whole extends, the width of this bottom is greater than the width on main part layer, the outer peripheral edge of bottom is run through from top to bottom the surface and is formed with the first breach that a plurality of intervals were arranged, each first breach all is located the outside on main part layer, this main part layer becomes the back taper, the inside wall and the lateral wall on main part layer are all concave to be equipped with the second breach.
2. The low stress ceramic package substrate with metal dam of claim 1, wherein: the back of ceramic substrate's shaping has the heat dissipation layer, and this back circuit layer is two, and it is located the both sides on heat dissipation layer respectively, all fills printing ink and is formed with the solder mask between two back circuit layers and the heat dissipation layer.
3. The low stress ceramic package substrate with metal dam of claim 1, wherein: the via holes are vertical via holes.
4. The low stress ceramic package substrate with metal dam of claim 1, wherein: the first gap is a round hole.
5. The low stress ceramic package substrate with metal dam of claim 1, wherein: the second breach is the annular groove, and the second breach is a plurality ofly that the interval set up from top to bottom.
6. The low stress ceramic package substrate with metal dam of claim 1, wherein: the periphery of the surface of the main body layer is recessed to form an embedding groove.
CN202122063949.4U 2021-08-30 2021-08-30 Low-stress ceramic packaging substrate for metal dam Active CN216134649U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202122063949.4U CN216134649U (en) 2021-08-30 2021-08-30 Low-stress ceramic packaging substrate for metal dam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202122063949.4U CN216134649U (en) 2021-08-30 2021-08-30 Low-stress ceramic packaging substrate for metal dam

Publications (1)

Publication Number Publication Date
CN216134649U true CN216134649U (en) 2022-03-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202122063949.4U Active CN216134649U (en) 2021-08-30 2021-08-30 Low-stress ceramic packaging substrate for metal dam

Country Status (1)

Country Link
CN (1) CN216134649U (en)

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