CN216133873U - Metal dam ceramic packaging substrate with excellent cold and hot impact resistance - Google Patents
Metal dam ceramic packaging substrate with excellent cold and hot impact resistance Download PDFInfo
- Publication number
- CN216133873U CN216133873U CN202122062020.XU CN202122062020U CN216133873U CN 216133873 U CN216133873 U CN 216133873U CN 202122062020 U CN202122062020 U CN 202122062020U CN 216133873 U CN216133873 U CN 216133873U
- Authority
- CN
- China
- Prior art keywords
- layer
- ceramic
- metal
- dam
- metal box
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Structure Of Printed Boards (AREA)
Abstract
The utility model discloses a metal dam ceramic packaging substrate with excellent cold and hot impact resistance, which comprises a ceramic base layer, a front circuit layer, a back circuit layer and a metal dam, wherein the ceramic base layer is arranged on the front surface of the metal dam; this metal box dam shaping is in ceramic substrate's upper surface and is located the periphery on positive circuit layer, and metal box dam encloses the configuration and becomes a holding chamber, and this holding chamber is the taper structure, and the metal box dam is including the bottom and in the main part layer of the upwards integrative extension in bottom surface, and the width of this bottom is greater than the width on main part layer, and this main part layer is the back taper. The width through setting up bottom in the metal box dam is greater than the width on main part layer, and the cooperation sets up the main part layer of back taper structure, can reduce the stress of metal box dam to ceramic substrate to make the metal box dam ceramic packaging substrate of this kind of special structural design have good cold and hot shock resistance, can not lead to the fracture because of stress concentration, can improve the life-span and the reliability of UVC module, and improve UVC module encapsulation yield that disinfects, satisfy current demand.
Description
Technical Field
The utility model relates to the technical field of ceramic packaging substrates, in particular to a metal dam ceramic packaging substrate with excellent cold and hot impact resistance.
Background
The ceramic base layer means that the copper foil is directly bonded to alumina (Al) at a high temperature2O3) Or aluminum nitride (AlN) ceramic substrates, have become the basic material for high power electronic circuit construction and interconnection technologies.
Along with the deepening of medical sterilization industry gradually, the service environment is diversified more, and the UVC sterilization packaging module has higher and higher requirements on heat dissipation of the ceramic base layer and cold and hot impact resistance. In the prior art, the traditional encapsulation substrate for the UVC eliminates the traditional molding process for anti-aging, adopts metal dam encapsulation to avoid the aging problem, but the thermal expansion coefficient of metal and the thermal expansion coefficient of ceramic are very different, the problem of ceramic base layer dark crack caused by overlarge stress of the ceramic base layer can occur in the encapsulation process, the cold and hot impact resistance is poor, so that the service life and the reliability of the UVC module are reduced, and the encapsulation yield of the UVC sterilization module is low. Therefore, there is a need for an improved ceramic package substrate.
SUMMERY OF THE UTILITY MODEL
In view of the above, the present invention is directed to the defects in the prior art, and the main objective of the present invention is to provide a metal dam ceramic package substrate with excellent cold and heat impact resistance, which can effectively solve the problems of substrate dark cracking and poor cold and heat impact resistance caused by excessive stress in the conventional ceramic package substrate.
In order to achieve the purpose, the utility model adopts the following technical scheme:
a metal box dam ceramic packaging substrate with excellent cold and hot impact resistance comprises a ceramic base layer, a front circuit layer, a back circuit layer and a metal box dam; the upper surface and the lower surface of the ceramic base layer are penetrated and formed with a through hole, and a conduction column is formed in the through hole; the front circuit layer is formed on the upper surface of the ceramic base layer and is in conductive connection with the upper end of the conductive column; the back circuit layer is formed on the lower surface of the ceramic base layer and is in conduction connection with the lower end of the conduction column; this metal box dam shaping is in ceramic substrate's upper surface and is located the periphery on positive circuit layer, and metal box dam encloses the configuration and becomes a holding chamber, and this holding chamber is the taper structure, and the metal box dam is including the bottom and in the main part layer of the upwards integrative extension in bottom surface, and the width of this bottom is greater than the width on main part layer, and this main part layer is the back taper.
Preferably, the through hole is formed by micro-etching or machining by laser or CNC.
Preferably, the through hole is a vertical through hole.
Preferably, the through hole is provided in plurality, and correspondingly, the conduction column is provided in plurality, and the conduction columns are respectively located in the through hole.
As a preferable scheme, the front circuit layer and the back circuit layer are formed by plating, preplating, depositing copper, pressing a dry film, exposing, developing and electroplating.
As a preferable scheme, the metal box dam is manufactured and formed by coating, preplating, copper deposition, dry film pressing, exposure and development and electroplating.
Preferably, the upper surface of the main body layer is recessed at the inner periphery to form a embedding groove.
Preferably, the center of the lower surface of the ceramic base layer is formed with two heat dissipation layers, the two back circuit layers are respectively located at two sides of the heat dissipation layer, and ink is filled between two sides of the heat dissipation layer and the corresponding back circuit layer to form a solder mask.
Compared with the prior art, the utility model has obvious advantages and beneficial effects, and specifically, the technical scheme includes that:
the width through setting up bottom in the metal box dam is greater than the width on main part layer, and the cooperation sets up the main part layer of back taper structure, can reduce the stress of metal box dam to ceramic substrate to make the metal box dam ceramic packaging substrate of this kind of special structural design have good cold and hot shock resistance, can not lead to the fracture because of stress concentration, can improve the life-span and the reliability of UVC module, and improve UVC module encapsulation yield that disinfects, satisfy current demand.
To more clearly illustrate the structural features and effects of the present invention, the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
Drawings
FIG. 1 is a cross-sectional view of a preferred embodiment of the present invention.
The attached drawings indicate the following:
10. ceramic base layer 11, through-hole
20. Front surface circuit layer 30 and back surface circuit layer
40. Metal box dam 41, bottom layer
42. Body layer 401, accommodating cavity
402. Embedding groove 50 and conduction column
60. Heat sink layer 70, solder mask.
Detailed Description
Referring to fig. 1, a specific structure of a preferred embodiment of the present invention is shown, which includes a ceramic substrate 10, a front circuit layer 20, a back circuit layer 30 and a metal dam 40.
The upper and lower surfaces of the ceramic substrate 10 are formed with through holes 11, the through holes 11 are formed with conductive columns 50, and the through holes 11 are formed by micro-etching, laser or CNC and other processing; in the present embodiment, the through hole 11 is a vertical through hole, the through hole 11 is plural, correspondingly, the conductive via 50 is plural, and the plural conductive vias 50 are respectively located in the through holes 11.
The front circuit layer 20 is formed on the upper surface of the ceramic substrate 10 and is conductively connected with the upper end of the conductive via 50; the back circuit layer 30 is formed on the lower surface of the ceramic substrate 10 and is conductively connected with the lower end of the conductive via 50; the front circuit layer 20 and the back circuit layer 30 are formed by coating, preplating, depositing copper, pressing a dry film, exposing, developing and electroplating.
The metal dam 40 is formed on the upper surface of the ceramic substrate 10 and located at the periphery of the front circuit layer 20, the metal dam 40 is formed to form an accommodating cavity 401, the accommodating cavity 401 is in a tapered structure, the metal dam 40 includes a bottom layer 41 and a main body layer 42 integrally extending from the surface of the bottom layer 41, the width of the bottom layer 41 is greater than that of the main body layer 42, and the main body layer 42 is in an inverted cone shape, so that the metal dam ceramic package substrate with the special structural design has excellent cold and hot shock resistance. In the present embodiment, the metal dam 40 is also formed by plating, pre-plating, depositing copper, pressing dry film, exposing, developing, and electroplating, and the inner periphery of the upper surface of the main body layer 42 is recessed to form an embedding groove 402.
And a heat dissipation layer 60 is formed at the center of the lower surface of the ceramic substrate 10, two back circuit layers 30 are respectively located at two sides of the heat dissipation layer 60, and ink is filled between the two sides of the heat dissipation layer 60 and the corresponding back circuit layer 30 to form a solder resist layer 70.
Detailed description the manufacturing process of this embodiment is as follows:
firstly, machining and molding a through hole 11 on a ceramic base layer 10 in a micro-etching or laser or CNC (computerized numerical control) mode and the like; then, the ceramic substrate 10 is formed into the front circuit layer 20, the back circuit layer 30, the metal dam 40 (the bottom layer 41 and the inverted cone-shaped main body layer 42), the conductive via 50 and the heat dissipation layer 60 by plating, pre-plating, copper deposition, dry film pressing, exposure, development and electroplating, and the solder resist layer 70 is formed by filling ink between the two sides of the heat dissipation layer 60 and the corresponding back circuit layer 30.
The design of the utility model is characterized in that:
the width through setting up bottom in the metal box dam is greater than the width on main part layer, and the cooperation sets up the main part layer of back taper structure, can reduce the stress of metal box dam to ceramic substrate to make the metal box dam ceramic packaging substrate of this kind of special structural design have good cold and hot shock resistance, can not lead to the fracture because of stress concentration, can improve the life-span and the reliability of UVC module, and improve UVC module encapsulation yield that disinfects, satisfy current demand.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the technical scope of the present invention, so that any minor modifications, equivalent changes and modifications made to the above embodiment according to the technical spirit of the present invention are within the technical scope of the present invention.
Claims (8)
1. A metal box dam ceramic packaging substrate with excellent cold and hot impact resistance comprises a ceramic base layer, a front circuit layer, a back circuit layer and a metal box dam; the upper surface and the lower surface of the ceramic base layer are penetrated and formed with a through hole, and a conduction column is formed in the through hole; the front circuit layer is formed on the upper surface of the ceramic base layer and is in conductive connection with the upper end of the conductive column; the back circuit layer is formed on the lower surface of the ceramic base layer and is in conduction connection with the lower end of the conduction column; this metal box dam shaping is at ceramic substrate's upper surface and is located the periphery on positive circuit layer, and metal box dam encloses the configuration and becomes a holding chamber, its characterized in that: the holding cavity is in a conical structure, the metal box dam comprises a bottom layer and a main body layer integrally extending upwards from the surface of the bottom layer, the width of the bottom layer is larger than that of the main body layer, and the main body layer is in an inverted cone shape.
2. The ceramic package substrate for metal dam according to claim 1, wherein: the through holes are formed by micro-etching or machining in a laser or CNC mode.
3. The ceramic package substrate for metal dam according to claim 1, wherein: the through holes are vertical through holes.
4. The ceramic package substrate for metal dam according to claim 1, wherein: the through holes are multiple, correspondingly, the conduction columns are multiple, and the conduction columns are respectively located in the through holes.
5. The ceramic package substrate for metal dam according to claim 1, wherein: the front circuit layer and the back circuit layer are manufactured and formed in a film coating mode, a pre-plating mode, a copper deposition mode, a dry film pressing mode, an exposure developing mode and an electroplating mode.
6. The ceramic package substrate for metal dam according to claim 1, wherein: the metal box dam is manufactured and formed through the modes of film coating, pre-plating, copper deposition, dry film pressing, exposure and development and electroplating.
7. The ceramic package substrate for metal dam according to claim 1, wherein: the periphery of the upper surface of the main body layer is recessed downwards to form an embedding groove.
8. The ceramic package substrate for metal dam according to claim 1, wherein: the ceramic substrate is characterized in that the heat dissipation layer is formed in the center of the lower surface of the ceramic substrate, the two back surface circuit layers are respectively located on two sides of the heat dissipation layer, and ink is filled between the two sides of the heat dissipation layer and the corresponding back surface circuit layers to form a solder mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122062020.XU CN216133873U (en) | 2021-08-30 | 2021-08-30 | Metal dam ceramic packaging substrate with excellent cold and hot impact resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122062020.XU CN216133873U (en) | 2021-08-30 | 2021-08-30 | Metal dam ceramic packaging substrate with excellent cold and hot impact resistance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216133873U true CN216133873U (en) | 2022-03-25 |
Family
ID=80772108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122062020.XU Active CN216133873U (en) | 2021-08-30 | 2021-08-30 | Metal dam ceramic packaging substrate with excellent cold and hot impact resistance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216133873U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117174663A (en) * | 2023-11-02 | 2023-12-05 | 江苏博睿光电股份有限公司 | Metal box dam ceramic packaging substrate and preparation method and application thereof |
-
2021
- 2021-08-30 CN CN202122062020.XU patent/CN216133873U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117174663A (en) * | 2023-11-02 | 2023-12-05 | 江苏博睿光电股份有限公司 | Metal box dam ceramic packaging substrate and preparation method and application thereof |
| CN117174663B (en) * | 2023-11-02 | 2024-02-02 | 江苏博睿光电股份有限公司 | Metal box dam ceramic packaging substrate and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI729301B (en) | Power semiconductor integrated ceramic module for semiconductor chip packaging and fabrication method | |
| US7948076B2 (en) | Semiconductor chip assembly with post/base heat spreader and vertical signal routing | |
| US8378372B2 (en) | Semiconductor chip assembly with post/base heat spreader and horizontal signal routing | |
| TWI515930B (en) | Light-emitting diode submount, light-emitting diode package and fabrication method thereof | |
| US20100071936A1 (en) | Thermally-Efficient Metal Core Printed Circuit Board With Selective Electrical And Thermal Connectivity | |
| CN110071206B (en) | COB aluminum-based packaging plate and preparation process thereof | |
| CN103208577B (en) | With the preparation method of recessed cup LED aluminium nitride ceramics support | |
| CN216133873U (en) | Metal dam ceramic packaging substrate with excellent cold and hot impact resistance | |
| CN107863436A (en) | A kind of three-dimensional ceramic substrate containing metallic cavity and preparation method thereof | |
| US8415703B2 (en) | Semiconductor chip assembly with post/base/flange heat spreader and cavity in flange | |
| CN108541134A (en) | A kind of soft or hard combination package substrate of high heat conduction and preparation method thereof | |
| CN201887040U (en) | QFN/DFN (quad flat non-lead/dual flat non-lead) packaged integrated circuit using PCB (printed circuit board) as substrate | |
| CN216133874U (en) | Ceramic packaging substrate of low-stress metal dam | |
| CN102437267A (en) | Light-emitting chip packaging structure of metal substrate | |
| CN103094126A (en) | Preparation method of subtle stereoscopic conducting circuit of ceramic element | |
| CN102237481B (en) | Surface mounted type power light-emitting diode (LED) bracket manufacturing method and product manufactured thereby | |
| CN117334795A (en) | Preparation and application of high-power LED packaging structure based on ceramic surrounding dam | |
| CN201853742U (en) | Surface pasting type power light emitting diode (LED) support frame structure | |
| JP2011096830A (en) | Semiconductor device | |
| CN110838475A (en) | Chip assembly and manufacturing method thereof | |
| CN104124213B (en) | The method and DBC plate encapsulating structures of a kind of balance DBC plate upper stresses | |
| CN216133856U (en) | Low-stress metal dam ceramic packaging substrate with special structure | |
| CN202651188U (en) | High power LED device glass metal packaging base | |
| CN204614772U (en) | Novel Fingerprint Lock encapsulating structure | |
| CN202758927U (en) | Power-type LED device ceramic packaging pedestal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |