CN117174663B - Metal box dam ceramic packaging substrate and preparation method and application thereof - Google Patents
Metal box dam ceramic packaging substrate and preparation method and application thereof Download PDFInfo
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- CN117174663B CN117174663B CN202311449320.0A CN202311449320A CN117174663B CN 117174663 B CN117174663 B CN 117174663B CN 202311449320 A CN202311449320 A CN 202311449320A CN 117174663 B CN117174663 B CN 117174663B
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- 239000000758 substrate Substances 0.000 title claims abstract description 137
- 239000000919 ceramic Substances 0.000 title claims abstract description 117
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 60
- 239000002184 metal Substances 0.000 title claims abstract description 60
- 238000004806 packaging method and process Methods 0.000 title abstract description 19
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 184
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 184
- 238000009713 electroplating Methods 0.000 claims abstract description 59
- 150000003839 salts Chemical class 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 21
- 230000000149 penetrating effect Effects 0.000 claims abstract description 6
- 238000005507 spraying Methods 0.000 claims description 20
- UBILRPVXFRDZQT-UHFFFAOYSA-M sodium 1-(4,5-dihydro-1,3-thiazol-2-yl)propyl-oxido-bis(sulfanylidene)-lambda6-sulfane Chemical compound S1C(=NCC1)C(CC)S(=S)(=S)[O-].[Na+] UBILRPVXFRDZQT-UHFFFAOYSA-M 0.000 claims description 11
- -1 tetraalkylammonium halide Chemical class 0.000 claims description 11
- 238000011282 treatment Methods 0.000 claims description 10
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 7
- 229910052708 sodium Inorganic materials 0.000 claims description 7
- 239000011734 sodium Substances 0.000 claims description 7
- 230000005496 eutectics Effects 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- FPAFDBFIGPHWGO-UHFFFAOYSA-N dioxosilane;oxomagnesium;hydrate Chemical compound O.[Mg]=O.[Mg]=O.[Mg]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O FPAFDBFIGPHWGO-UHFFFAOYSA-N 0.000 claims description 4
- 235000010215 titanium dioxide Nutrition 0.000 claims description 4
- 229910016747 AlCl3—NaCl—KCl Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 150000001252 acrylic acid derivatives Chemical class 0.000 claims description 3
- 125000003261 o-tolyl group Chemical group [H]C1=C([H])C(*)=C(C([H])=C1[H])C([H])([H])[H] 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 8
- 238000012858 packaging process Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 238000005429 filling process Methods 0.000 abstract description 4
- 238000007747 plating Methods 0.000 description 44
- 229910000679 solder Inorganic materials 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 13
- 229910052802 copper Inorganic materials 0.000 description 13
- 239000010949 copper Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 230000008719 thickening Effects 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 6
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000012467 final product Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- LAQFLZHBVPULPL-UHFFFAOYSA-N methyl(phenyl)silicon Chemical compound C[Si]C1=CC=CC=C1 LAQFLZHBVPULPL-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- BUKHSQBUKZIMLB-UHFFFAOYSA-L potassium;sodium;dichloride Chemical compound [Na+].[Cl-].[Cl-].[K+] BUKHSQBUKZIMLB-UHFFFAOYSA-L 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
The invention provides a metal box dam ceramic packaging substrate and a preparation method and application thereof, and belongs to the technical field of substrate packaging. The metal dam ceramic package substrate includes: the ceramic substrate comprises a ceramic substrate body, an upper circuit layer, a lower circuit layer, at least one conducting column, an aluminum dam base layer and an aluminum dam; the lower circuit layer is arranged on the lower surface of the ceramic substrate body; the upper circuit layer and the aluminum surrounding dam base layer are arranged on the upper surface of the ceramic substrate body, and the aluminum surrounding dam base layer is arranged on the periphery of the upper circuit layer in a surrounding manner; at least one conducting column is arranged on the ceramic substrate body in a penetrating way, and two ends of the conducting column are respectively and electrically connected with the upper circuit layer and the lower circuit layer; the aluminum box dam is arranged on the aluminum box dam substrate layer, and is formed by high-speed electroplating of aluminum through molten salt, so that a good hole filling process on a ceramic substrate is realized, a good front and back conduction effect is achieved, stress generated in the packaging process is reduced, and the problems of breakage, dark crack and the like generated in the substrate packaging and working process are reduced.
Description
Technical Field
The invention belongs to the technical field of substrate packaging, and particularly relates to a metal box dam ceramic packaging substrate, and a preparation method and application thereof.
Background
The existing packaging substrate is often packaged by a metal dam to replace the traditional injection molding process so as to improve the ageing resistance of the packaging module. However, most of the current metal dams are made of copper, and copper is electroplated on the ceramic substrate in a common electroplating mode, so that the thickness of the formed metal dams is small; secondly, because the metal copper and the ceramic base layer have different thermal expansion coefficients, excessive stress can be generated in the packaging process, and the problem of dark crack of the ceramic base layer is caused. In addition, the copper dam has larger weight, the cold and hot shock resistance of copper is poor, the ceramic substrate is continuously changed at-40-300 ℃ under the use scene of high-frequency current on-off, and the ceramic substrate is easy to break. The above problems reduce the yield of the package substrate, and also reduce the service life and reliability of the ceramic substrate, so that the ceramic substrate cannot be qualified for the application scenario of high-frequency current on-off variation.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a metal box dam ceramic packaging substrate, a preparation method and application thereof.
In one aspect of the present invention, a metal dam ceramic package substrate is provided, including: the ceramic substrate comprises a ceramic substrate body, an upper circuit layer, a lower circuit layer, at least one conducting column, an aluminum dam base layer and an aluminum dam; wherein,
the lower circuit layer is arranged on the lower surface of the ceramic substrate body;
the upper circuit layer and the aluminum surrounding dam base layer are arranged on the upper surface of the ceramic substrate body, and the aluminum surrounding dam base layer is arranged on the periphery of the upper circuit layer in a surrounding manner;
the at least one conducting column penetrates through the ceramic substrate body, and two ends of the at least one conducting column are respectively and electrically connected with the upper circuit layer and the lower circuit layer;
the aluminum surrounding dam is arranged on the aluminum surrounding dam substrate layer, and is formed by high-speed aluminum electroplating through molten salt.
Optionally, the thickness of the aluminum dam ranges from 550 μm to 650 μm.
Optionally, the aluminum dams include a first aluminum dam and a second aluminum dam stacked in sequence.
In another aspect of the present invention, a method for preparing the metal dam ceramic package substrate described above is provided, the method comprising:
forming a through hole penetrating through the thickness of the ceramic substrate body;
forming metal layers on the upper and lower surfaces of the ceramic substrate body and the inner wall of the through hole;
and spraying high-temperature-resistant ink on the metal layer for multiple times, exposing and developing, and carrying out high-speed aluminum electroplating by using molten salt to form an upper circuit layer, a lower circuit layer, a conducting column for connecting the upper circuit layer and the lower circuit layer, and an aluminum dam substrate layer and an aluminum dam which are arranged on the outer side of the upper circuit layer in a surrounding manner.
Optionally, spray high temperature resistant printing ink, exposure develop and molten salt high-speed electrofacing aluminum are sprayed many times on the metal layer, form upper circuit layer, lower circuit layer, connect upper circuit layer with the conduction post of lower circuit layer to and enclose and establish the aluminium box dam in the upper circuit layer outside, include:
spraying high-temperature-resistant ink on the metal layer for the first time, exposing and developing, and carrying out high-speed aluminum electroplating by molten salt to form an upper circuit layer, a first lower circuit layer, a conducting column which is positioned in the through hole and connects the upper circuit layer with the first lower circuit layer, and an aluminum surrounding dam substrate layer which is arranged on the outer side of the upper circuit layer in a surrounding manner;
leveling the upper circuit layer, the lower circuit layer and the aluminum surrounding dam substrate layer;
spraying high-temperature-resistant ink on the ceramic substrate body after leveling treatment for the second time, exposing and developing, and carrying out molten salt high-speed aluminum electroplating to sequentially form a first aluminum surrounding dam and a second lower circuit layer on the surfaces of the aluminum surrounding dam base layer and the first lower circuit layer;
and spraying high-temperature resistant ink on the upper surface of the ceramic substrate body for the third time, exposing and developing, and carrying out high-speed aluminum electroplating by using molten salt to form a second aluminum dam on the first aluminum dam.
Optionally, the plating solution used for the molten salt high-speed aluminum plating comprises AlCl 3 -NaCl-KCl eutectic molten salt and accelerator.
Optionally, the accelerator comprises sodium thiazolinyl dithiopropane sulfonate.
Optionally, the accelerator further comprises sodium N, N-dimethyl-dithiocarbonyl propane sulfonate and/or a tetraalkylammonium halide.
Optionally, the high temperature resistant ink comprises nano SiO 2 、Al 2 O 3 Titanium white, talcum powder and ZrO 2 Methyl phenyl silicone and acrylates.
In another aspect of the present invention, an application of a metal dam ceramic package substrate is provided, and the metal dam ceramic package substrate is applied to IGBT, MOSFET and UVC devices.
The invention provides a metal box dam ceramic packaging substrate, a preparation method and application thereof, wherein the metal box dam ceramic packaging substrate comprises the following components: the ceramic substrate comprises a ceramic substrate body, an upper circuit layer, a lower circuit layer, at least one conducting column, an aluminum dam base layer and an aluminum dam; the lower circuit layer is arranged on the lower surface of the ceramic substrate body; the upper circuit layer and the aluminum surrounding dam base layer are arranged on the upper surface of the ceramic substrate body, and the aluminum surrounding dam base layer is arranged on the periphery of the upper circuit layer in a surrounding manner; at least one conducting column is arranged on the ceramic substrate body in a penetrating way, and two ends of the conducting column are respectively and electrically connected with the upper circuit layer and the lower circuit layer; the aluminum surrounding dam is arranged on the aluminum surrounding dam substrate layer, and is formed by high-speed electroplating of aluminum through molten salt. The invention adopts high-speed molten salt to plate aluminum to form the aluminum surrounding dam made of aluminum, realizes a good hole filling process on the ceramic substrate, further realizes a good front and back conduction effect, is beneficial to reducing the weight of a final product, has better plasticity, generates smaller stress in the packaging process, and greatly reduces the problems of breakage and dark crack generated during the substrate packaging and working.
Drawings
FIG. 1 is a schematic view of a metal dam ceramic package substrate according to an embodiment of the present invention;
FIG. 2 is a block flow diagram of a method for manufacturing a ceramic package substrate of a metal dam according to another embodiment of the present invention;
FIG. 3 is a schematic diagram of the plating circuit of the upper independent circuit and the aluminum dam base layer in the first preset plating circuit according to another embodiment of the present invention;
FIG. 4 is a schematic diagram of plating lines of a first lower independent line among first preset plating lines according to another embodiment of the present invention;
FIG. 5 is a schematic diagram of a plating line of a first aluminum dam in a second predetermined plating line according to another embodiment of the invention;
FIG. 6 is a schematic diagram of a plating line of a second lower independent line of a second predetermined plating line according to another embodiment of the present invention;
FIG. 7 is a schematic diagram of a plating line of a second aluminum dam in a third predetermined plating line according to another embodiment of the invention;
FIG. 8 is a schematic diagram of a solder mask according to another embodiment of the present invention;
FIG. 9 is a graph showing the plating thickness of the aluminum dam according to the plating rate in example 1 of the present invention.
Detailed Description
The present invention will be described in further detail below with reference to the drawings and detailed description for the purpose of better understanding of the technical solution of the present invention to those skilled in the art. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without creative efforts, based on the described embodiments of the present invention belong to the protection scope of the present invention.
Unless specifically stated otherwise, technical or scientific terms used herein should be defined in the general sense as understood by one of ordinary skill in the art to which this invention belongs. The use of "including" or "comprising" and the like in the present invention does not limit the shape, number, step, operation and/or group thereof mentioned nor excludes the presence or addition of one or more other different shapes, numbers, steps, operations and/or groups thereof. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or order of the indicated features. And, the terms "length", "width", "thickness", "upper", "lower", "top", "bottom", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, and are used only to indicate a relative positional relationship, which may be changed when the absolute position of the object to be described is changed accordingly.
As shown in fig. 1, in one aspect of the present invention, a metal dam ceramic package substrate 100 is provided, including: ceramic substrate body 110, upper wiring layer 120, lower wiring layer 130, aluminum dam base layer 140, and aluminum dam 150; the lower circuit layer 130 is disposed on the lower surface of the ceramic substrate body 110, the upper circuit layer 120 and the aluminum dam 150 are disposed on the upper surface of the ceramic substrate body 110, the aluminum dam base layer 140 is disposed around the upper circuit layer 120, the conductive posts are disposed on the ceramic substrate body 110 in a penetrating manner, and two ends of the conductive posts are respectively electrically connected with the upper circuit layer 120 and the lower circuit layer 130 so as to conduct the upper circuit layer 120 and the lower circuit layer 130; an aluminum dam 150 is disposed above the aluminum dam base layer 140, and obviously, the aluminum dam is also disposed around the periphery of the upper wiring layer 120, and the aluminum dam 150 is formed by high-speed aluminum plating with molten salt.
It should be understood that in this embodiment, a metal layer is further disposed on the ceramic substrate body, and the thickness of the metal layer is generally 0.08 μm to 0.12 μm, so as to improve the electrical connection performance of the ceramic substrate body, that is, the metal layer is disposed on the upper surface, the lower surface and the inner wall of the through hole of the ceramic substrate body, the upper circuit layer and the aluminum dam base layer are disposed on the metal layer on the upper surface of the ceramic substrate body, and the lower circuit layer is disposed on the metal layer on the lower surface of the ceramic substrate body.
Unlike electrolytic copper plating, aluminum cannot be plated by an aqueous solution, so it is difficult to industrially achieve electrolytic aluminum plating, and in this embodiment, a metal dam made of aluminum is formed on a ceramic substrate by a molten salt high-speed electrolytic aluminum plating method.
In the embodiment, the whole metal surrounding dam is formed by adopting an aluminum material, compared with copper, the aluminum material has excellent cold and hot shock resistance, no obvious fracture and damage are found after 1000 times of circulation under the thermal circulation condition of minus 40 ℃ to 300 ℃, and the copper-containing surrounding dam ceramic substrate in the prior art can be broken and damaged after 600 times of circulation; secondly, only one third of the copper based on the density of aluminum contributes to weight reduction of the final product; furthermore, based on the mode that this embodiment adopted molten salt to electroplate forms aluminium box dam, do benefit to the thickness that increases the aluminium box dam, and can set up the conduction post that is used for connecting upper circuit layer and lower circuit layer on ceramic substrate body, realized good ceramic substrate positive and negative and conducted the effect.
Further, the plating solution used in the molten salt high-speed aluminum plating process comprises AlCl 3 The NaCl-KCl eutectic molten salt and accelerator can realize high-speed electroplating in the molten salt. Among them, the accelerator may be a sodium thiazolinyl dithiopropane sulfonate, and the content thereof may be preferably 10%. Of course, the accelerator may also be a mixture of sodium thiazolinyl dithiopropane sulfonate with other materials, for example, in some preferred embodiments, the accelerator is a 5% sodium thiazolinyl dithiopropane sulfonate with 5% sodium N, N-dimethyl-dithiocarbonyl propane sulfonate; in other preferred embodiments, the accelerator is a 5% sodium thiazolinyl dithiopropane sulfonate in combination with 5% tetraalkylammonium halide; in other preferred embodiments, the accelerator is a mixture of 10% sodium thiazolinyl dithiopropane sulfonate, 5% sodium N, N-dimethyl-dithiocarbonyl propane sulfonate, and 5% tetraalkylammonium halide.
It should be understood that in the molten salt plating process, a solder mask layer is also required to be formed by spraying high temperature resistant ink to be matched with molten salt of aluminum to plate aluminum on the ceramic substrate body, in this embodiment, the high temperature resistant ink is added with acrylic ester, so that the spraying thickness of the ink can be about 400 μm, the ink can be kept stable at high temperature, and the process of plating aluminum is facilitated.
Further, in the present embodiment, as shown in fig. 1, the aluminum dam 150 includes a first aluminum dam 151 and a second aluminum dam 152 stacked in order, and the thickness of the aluminum dam formed by stacking the two aluminum layers ranges from 550 μm to 650 μm, for example, 600 μm, and is larger.
It should be noted that, the above-mentioned aluminum dam base layer, the first aluminum dam and the second aluminum dam are all annular structures, and the specific shape of the annular structures may be set according to actual needs, which is not limited in particular. The peripheral black area shown in fig. 3 is the annular structural shape of the aluminum dam base layer, the peripheral black area shown in fig. 5 is the annular structural shape of the first aluminum dam, and the peripheral black area shown in fig. 7 is the annular structural shape of the second aluminum dam.
In some preferred embodiments, as shown in FIG. 1, the top wall of the first aluminum dam 151 forms a stepped surface with the inner side wall of the second aluminum dam 152, which forms a package chamber with the ceramic substrate body and forms an integral connection structure.
Further, in the present embodiment, as shown in fig. 1, the lower circuit layer 130 includes a first lower circuit layer 131 and a second lower circuit layer 132, wherein the first lower circuit layer 131 and the upper circuit layer 120 have the same thickness and are formed by synchronous electroplating, and the second lower circuit layer 132 and the first aluminum dam 151 are formed by synchronous electroplating.
In this embodiment, two lower circuit layers are disposed on the lower surface of the ceramic substrate body, so as to increase the heat dissipation effect, and simultaneously match the expansion degrees of the upper and lower surfaces of the ceramic substrate body, so as to avoid the warpage of the ceramic substrate.
It should be noted that, in this embodiment, the upper circuit layer and the lower circuit layer each include a plurality of independent circuits arranged at intervals, and a plurality of through holes are provided on the ceramic substrate body, a conductive post is provided in each through hole, and two ends of each conductive post are connected with the upper independent circuit and the lower independent circuit respectively.
Further, in the present embodiment, as shown in fig. 1, a solder mask 160 is further disposed on the ceramic substrate body 110, and the solder mask is formed by high temperature resistant ink and is used for soldering other structures in the subsequent packaging process, so as to prevent solder diffusion, protect the circuit and insulate.
The ceramic substrate body and the metal surrounding dam form an integrated connection structure, the thickness of the aluminum surrounding dam can reach 600 mu m, the aluminum surrounding dam has the advantages of light product quality, no dark crack phenomenon in the packaging process and the like, and the surface of the aluminum surrounding dam has no obvious change after 1000 times of thermal cycles at-40-300 ℃, and can be used for application scenes of high-frequency current on-off change.
As shown in fig. 2, in another aspect of the present invention, a method S100 for preparing a metal dam ceramic package substrate is provided, which includes steps S110 to S130:
s110, forming a through hole penetrating through the thickness of the ceramic substrate body.
Specifically, a through hole having a diameter ranging from 120 μm to 160 μm is formed in the ceramic substrate body by laser processing.
And S120, forming metal layers on the upper surface and the lower surface of the ceramic substrate body and on the inner wall of the through hole.
Specifically, the surface of the ceramic substrate body is subjected to film metallization by adopting a magnetron sputtering mode to form a metal layer, wherein the thickness range is 0.08-0.12 mu m.
S130, spraying high-temperature resistant ink on the metal layer for many times, exposing and developing, and carrying out high-speed aluminum electroplating by molten salt to form an upper circuit layer, a lower circuit layer, a conducting column which is positioned in the through hole and connects the upper circuit layer and the lower circuit layer, and an aluminum dam substrate layer and an aluminum dam which are arranged on the outer side of the upper circuit layer in a surrounding manner.
Specifically, step S130 includes step S1301 of fabricating a circuit layer and an aluminum dam base layer, step S1302 of leveling, and step S1303 of electroplating and thickening to fabricate a first aluminum dam and a second aluminum dam.
Step S1301, manufacturing a circuit layer and an aluminum dam base layer, including: the method comprises the steps of spraying high-temperature resistant ink on a metal layer for the first time to form a first solder mask layer, exposing and developing for the first time to form a first preset electroplating circuit, and electroplating aluminum at a high speed by using first molten salt to form an upper circuit layer, a first lower circuit layer, a conducting column which is positioned in a through hole and is used for connecting the upper circuit layer and the first lower circuit layer, and an aluminum surrounding dam substrate layer which is arranged on the outer side of the upper circuit layer. That is, the upper circuit layer, the lower circuit layer and the aluminum surrounding dam base layer are manufactured on the upper surface and the lower surface of the ceramic substrate body in a mode of film metallization, ink spraying and aluminum electroplating, through holes are formed between the upper circuit layer and the lower circuit layer on the upper surface and the lower surface of the ceramic substrate body to realize vertical electric connection, the through holes are filled with metal to form a conducting column, the upper circuit layer and the lower circuit layer are conducted through the conducting column, and the ceramic substrate body, the upper circuit layer, the lower circuit layer and the aluminum surrounding dam base layer form a ceramic base.
The aluminum dam base layer has an annular structure, that is, an annular aluminized layer is electroplated on the periphery of the upper circuit layer to form the aluminum dam base layer.
It should be further noted that, the upper circuit layer includes a plurality of upper independent circuits disposed at intervals, the first lower circuit layer includes a plurality of first lower independent circuits disposed at intervals, that is, the plurality of independent circuits are spaced apart, and the aluminum dam base layer is also spaced apart from the plurality of upper independent circuits.
It should be still noted that, the first preset plating line includes a front line and a back line, where the front line corresponds to the plating line of the upper line layer and the aluminum dam base layer, as shown in fig. 3, the peripheral black ring-shaped area is the plating line of the aluminum dam base layer, and the middle four black areas are the plating lines of the plurality of upper independent lines. Next, the reverse-side circuit corresponds to the plating circuit of the first lower circuit layer, as shown in fig. 4, the black block-shaped area is a plurality of plating circuits of the first lower independent circuits, and the middle circular black area is a plating circuit of the conductive post.
It should be understood that the white area in fig. 3 and 4 is a solder mask formed by the high temperature resistant ink, wherein the high temperature resistant ink of the present embodiment is added with acrylic ester to increase stability of the ink, so that the ink is sprayed at high temperature, and the thickness of the solder mask reaches 350 μm to 450 μm, so that the solder mask is kept stable in the high temperature molten salt.
In some preferred embodiments, the high temperature resistant ink comprises nano SiO 2 、Al 2 O 3 Titanium white, talcum powder and ZrO 2 Methyl phenyl silicone and acrylates.
As a further advantageAlternative embodiments, nano SiO in high temperature resistant ink 2 Is 2% of Al 2 O 3 2% of titanium dioxide, 2% of talcum powder and 2% of ZrO 2 2%, 10% of acrylic ester and 80% of methyl phenyl silicone resin.
Further, the plating solution for high-speed molten salt aluminum plating comprises AlCl 3 In the present embodiment, high-speed aluminum electroplating in molten salt can be realized by adding an accelerator to the eutectic molten salt, and the thickness of the aluminum plating layer is increased
In some preferred embodiments, alCl in eutectic molten salt 3 The mass ratio of NaCl to KCl can be preferably 8:1:1, the current density in electroplating is 8-12ASD, the temperature of molten salt is 220-260 ℃, and the thickness of the formed aluminum dam substrate layer is 40-60 mu m.
In other preferred embodiments, the accelerator comprises sodium thiazolinyl dithiopropane sulfonate.
In other preferred embodiments, the accelerator further comprises sodium N, N-dimethyl-dithiocarbonyl propane sulfonate, that is, the accelerator may be a mixture of sodium thiazolinyl dithiopropane sulfonate and sodium N, N-dimethyl-dithiocarbonyl propane sulfonate.
In other preferred embodiments, the accelerator further comprises a tetraalkylammonium halide, that is, the accelerator may also be a mixture of sodium thiazolinyl dithiopropane sulfonate and a tetraalkylammonium halide.
In other preferred embodiments, the accelerator may also be a mixture of sodium thiazolinyl dithiopropane sulfonate, sodium N, N-dimethyl-dithiocarbonyl propane sulfonate, and a tetraalkylammonium halide.
Step S1302, leveling the ceramic substrate body with the circuit layer and the aluminum dam base layer.
Step S1303, performing two times of electroplating thickening treatment, forming a first aluminum surrounding dam and a second lower circuit layer through the first time of electroplating thickening treatment, and forming a second aluminum surrounding dam through the second time of electroplating thickening treatment, wherein the specific process is as follows:
spraying high-temperature resistant ink on the ceramic substrate body after leveling treatment for the second time to form a second solder mask layer, forming a second preset electroplating circuit through the second exposure and development, and forming a first aluminum surrounding dam and a second lower circuit layer on the surfaces of the aluminum surrounding dam base layer and the first lower circuit layer in sequence through molten salt high-speed electroplating aluminum. And then, spraying high-temperature resistant ink on the upper surface of the ceramic substrate body for the third time to form a third solder mask layer, forming a third preset electroplating circuit through third exposure and development, and then, electroplating aluminum at a high speed through third molten salt to form a second aluminum surrounding dam on the first aluminum surrounding dam. That is, the aluminum dam is formed by thickening the aluminum dam base layer to a desired height by electroplating. And the side wall of the second aluminum surrounding dam and the top wall of the first aluminum surrounding dam form a step surface, so that the design is beneficial to improving the air tightness of the cavity of the metal surrounding dam during packaging.
It should be noted that the second lower circuit layer also includes a plurality of second lower independent circuits disposed at intervals.
It should be further noted that the second preset plating line includes a front line and a back line, where the front line corresponds to the plating line of the first aluminum dam, as shown in fig. 5, and the peripheral black ring area is the plating line of the first aluminum dam. Next, the opposite-side circuit corresponds to the plating circuit of the second lower circuit layer, as shown in fig. 6, and the black block-shaped area is a plurality of plating circuits of the second lower independent circuits, which are the same as the plating circuits of the first lower independent circuits, that is, the second lower independent circuits are stacked on the first lower independent circuits.
It should be still noted that, the third preset plating line includes a plating line of the second aluminum dam, as shown in fig. 7, the peripheral black ring area is a plating line of the second aluminum dam, and its area is smaller than that of the plating line of the first aluminum dam, so that the first aluminum dam protrudes from the second aluminum dam, that is, the inner side wall of the second aluminum dam and the top wall of the first aluminum dam form a step surface.
It should be noted that, a schematic diagram of the solder mask formed by the high temperature resistant ink on the lower surface of the ceramic substrate body is shown in fig. 8, and the black area is a solder mask formed by spraying the high temperature resistant ink, that is, the black area does not need to be electroplated with aluminum, which corresponds to the solder mask in the white area in fig. 6.
In the second electroplating thickening treatment, the high-temperature resistant ink used for forming the solder mask layer and the electroplating solution used in electroplating are the same as those used in the first electroplating thickening treatment, the high-temperature resistant ink is matched with molten salt of aluminum to realize that a thick aluminum layer with the thickness of more than 0.2mm is electroplated at the temperature of 250 ℃, and the aluminum dam with the thickness of 600 mu m is formed through the two thickening electroplating treatments.
In the present embodiment, besides the method of spraying high-temperature ink, exposing and developing, and electroplating aluminum, the method of etching may be used to obtain separate lines and aluminized dams, and the steps of gold or silver surface treatment may be performed on the separate lines and aluminized dams.
Unlike copper, in this embodiment, aluminum cannot be electroplated by an aqueous solution, so it is industrially difficult to achieve electroplating of aluminum, and thus, this embodiment forms a thick metal dam made of aluminum as a whole by a method of high-speed molten salt electroplating of aluminum; in addition, in the preparation process, a good hole filling process on the ceramic substrate body is realized by reasonably preparing an electroplating process of metal aluminum and selecting proper electroplating liquid, so that a good front and back side conduction effect is realized. In addition, the ceramic substrate formed by the embodiment has smaller stress in the packaging process, so that the occurrence of cracks on the ceramic substrate can be reduced, and the yield, the service life and the reliability of the packaging substrate are greatly improved.
In another aspect of the invention, an application of a metal dam ceramic package substrate is provided, wherein the metal dam ceramic package substrate is applied to IGBT, MOSFET and UVC devices.
The ceramic package substrate of the metal surrounding dam has excellent cold and hot shock resistance, and can be applied to high-power and high-frequency equipment, such as controllers of products of electric automobiles, solar generators, radars, medical sterilization equipment and the like, for example, high-power or high-frequency devices of IGBT (insulated gate bipolar transistor), MOSFET (metal-oxide-semiconductor field effect transistor), UVC (ultraviolet light source diode) modules and the like.
The preparation method and the performance of the metal box dam ceramic package substrate are further described below with reference to specific examples:
example 1
The preparation method of the metal box dam ceramic package substrate in the example comprises the following steps:
s1, laser drilling is adopted on an AlN ceramic substrate body, and the diameter of a through hole is 150 mu m.
S2, plating metal Ti on the ceramic substrate body with the through holes by magnetron sputtering, wherein the thickness of the metal Ti is 0.1 mu m, and forming metal layers on the upper surface and the lower surface of the ceramic substrate body and the inner walls of the through holes.
S3, manufacturing an AlN ceramic substrate body into a first preset electroplating circuit by spraying high-temperature-resistant ink, wherein the thickness of the sprayed ink is 400 mu m, and then manufacturing an upper circuit layer, a lower circuit layer, an annular aluminum surrounding dam base layer and a conducting column by electroplating aluminum with molten salt on a metal layer, wherein the molten salt electroplating aluminum adopts AlCl 3 -NaCl-KCl eutectic salt (AlCl) 3 The mass ratio of NaCl to KCl is 8:1:1), the current density is 10ASD, the molten salt temperature is 250 ℃, and the plating thickness is about 50 μm. And then, etching to remove the ink solder mask.
S4, leveling the surface of the ceramic substrate body with the independent circuit and the annular aluminum surrounding dam base layer.
S5, repeatedly spraying high-temperature-resistant ink on the ceramic substrate body subjected to the leveling treatment, and electroplating with molten salt to thicken the annular aluminum surrounding dam substrate layer on the periphery of the upper independent circuit to 600 mu m through electroplating, so as to form the aluminum-plated surrounding dam.
Further, the aluminum-plated box dam and the ceramic substrate body of the embodiment form a packaging cavity and form an integrated connection structure, and by observing the ceramic packaging substrate of the aluminum box dam, the surface coating is complete, the filling holes are complete and defect-free, and the aluminum-plated box dam and the ceramic substrate body are subjected to 1000 times of thermal cycles at the temperature of-40 ℃ to 300 ℃, so that no obvious change is found on the surface of the aluminum-plated box dam. As shown in FIG. 9, the surface electroplating rate of the ceramic substrate body can reach 200 μm/h, and the thickness of the aluminum dam can reach 600 μm. Compared with common electroplating, the thickness of the aluminum dam obtained by adopting the high-speed electroplating method of the embodiment is larger under the same electroplating rate condition.
The invention provides a metal box dam ceramic packaging substrate and a preparation method and application thereof, which have the following beneficial effects compared with the prior art:
firstly, the invention adopts the high-speed molten salt to plate the aluminum surrounding dam, and realizes a good hole filling process on the ceramic substrate by reasonably preparing the electroplating process and the electroplating solution of metal aluminum, thereby further realizing a good front and back side conduction effect of the ceramic substrate.
Secondly, compared with the copper dam ceramic substrate, the aluminum material used for the aluminum dam ceramic substrate has the density of only one third of copper, so that the weight is obviously lighter, and the weight of a final product is reduced; and secondly, the aluminum box dam ceramic substrate has better plasticity, and simultaneously has smaller stress generated in the packaging process, so that the problems of breakage and dark crack generated in the substrate packaging and working process are greatly reduced.
Third, the ceramic substrate of the invention has improved cold and hot shock resistance, no obvious fracture and damage after 1000 times of circulation under the thermal circulation condition of-40 ℃ to 300 ℃, and better performance compared with the copper dam ceramic substrate in the prior art. .
Fourth, the preparation method of the invention has high electroplating speed and large primary electroplating thickness: high-speed aluminum electroplating in molten salt electrolysis can be realized by adding an accelerator into the molten salt, and the thickness of the aluminum is 600 mu m.
Fifth, the present invention can spray ink 400 μm thick and remain stable in high temperature molten salt by adding acrylic ester to the ink.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (8)
1. A metal dam ceramic package substrate, comprising: the ceramic substrate comprises a ceramic substrate body, an upper circuit layer, a lower circuit layer, at least one conducting column, an aluminum dam base layer and an aluminum dam; wherein,
the lower circuit layer is arranged on the lower surface of the ceramic substrate body;
the upper circuit layer and the aluminum surrounding dam base layer are arranged on the upper surface of the ceramic substrate body, and the aluminum surrounding dam base layer is arranged on the periphery of the upper circuit layer in a surrounding manner;
the at least one conducting column penetrates through the ceramic substrate body, and two ends of the at least one conducting column are respectively and electrically connected with the upper circuit layer and the lower circuit layer;
the aluminum surrounding dam is arranged on the aluminum surrounding dam substrate layer, the upper circuit layer, the lower circuit layer, the aluminum surrounding dam substrate layer and the aluminum surrounding dam are formed by high-speed molten salt aluminum electroplating, and the electroplating liquid used for the high-speed molten salt aluminum electroplating comprises AlCl 3 -NaCl-KCl eutectic molten salt with an accelerator comprising sodium thiazolinyl dithiopropane sulfonate.
2. The metal dam ceramic package substrate of claim 1, wherein the thickness of the aluminum dam ranges from 550 μm to 650 μm.
3. The metal dam ceramic package substrate of claim 1, wherein the aluminum dams comprise a first aluminum dam and a second aluminum dam stacked in sequence.
4. A method of making the metal dam ceramic package substrate of any one of claims 1 to 3, comprising:
forming a through hole penetrating through the thickness of the ceramic substrate body;
forming metal layers on the upper and lower surfaces of the ceramic substrate body and the inner wall of the through hole;
and spraying high-temperature-resistant ink on the metal layer for multiple times, exposing and developing, and carrying out high-speed aluminum electroplating by using molten salt to form an upper circuit layer, a lower circuit layer, a conducting column for connecting the upper circuit layer and the lower circuit layer, and an aluminum dam substrate layer and an aluminum dam which are arranged on the outer side of the upper circuit layer in a surrounding manner.
5. The method of claim 4, wherein spraying the high temperature resistant ink, exposing and developing, and high speed electroplating molten salt aluminum onto the metal layer a plurality of times to form an upper circuit layer, a lower circuit layer, via posts connecting the upper circuit layer and the lower circuit layer, and an aluminum dam surrounding the outer side of the upper circuit layer, comprises:
spraying high-temperature-resistant ink on the metal layer for the first time, exposing and developing, and carrying out high-speed aluminum electroplating by molten salt to form an upper circuit layer, a first lower circuit layer, a conducting column which is positioned in the through hole and connects the upper circuit layer and the first lower circuit layer, and an aluminum surrounding dam substrate layer which is arranged on the outer side of the upper circuit layer in a surrounding manner;
leveling the upper circuit layer, the first lower circuit layer and the aluminum surrounding dam substrate layer;
spraying high-temperature-resistant ink on the ceramic substrate body after leveling treatment for the second time, exposing and developing, and carrying out molten salt high-speed aluminum electroplating to sequentially form a first aluminum surrounding dam and a second lower circuit layer on the surfaces of the aluminum surrounding dam base layer and the first lower circuit layer;
and spraying high-temperature resistant ink on the upper surface of the ceramic substrate body for the third time, exposing and developing, and carrying out high-speed aluminum electroplating by using molten salt to form a second aluminum dam on the first aluminum dam.
6. The method of claim 5, wherein the accelerator used for high-speed electroplating of aluminum with molten salt further comprises sodium N, N-dimethyl-dithio carbonyl propane sulfonate and/or tetraalkylammonium halide.
7. The method of claim 4, wherein the high temperature resistant ink comprises nano SiO 2 、Al 2 O 3 Titanium white, talcum powder and ZrO 2 Methyl phenyl silicone and acrylates.
8. Use of a metal dam ceramic package substrate according to any one of claims 1 to 3 in IGBTs, MOSFETs and UVC devices.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102330095A (en) * | 2011-08-29 | 2012-01-25 | 中国科学院合肥物质科学研究院 | Preparation method of Al2O3 coating on surface of steel-matrix material |
| CN108899406A (en) * | 2018-07-02 | 2018-11-27 | 江西科技师范大学 | A kind of highly reliable large power ultraviolet LED integrated encapsulation method |
| CN216133874U (en) * | 2021-08-30 | 2022-03-25 | 江西晶弘新材料科技有限责任公司 | Ceramic packaging substrate of low-stress metal dam |
| CN216133873U (en) * | 2021-08-30 | 2022-03-25 | 江西晶弘新材料科技有限责任公司 | Metal dam ceramic packaging substrate with excellent cold and hot impact resistance |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102330095A (en) * | 2011-08-29 | 2012-01-25 | 中国科学院合肥物质科学研究院 | Preparation method of Al2O3 coating on surface of steel-matrix material |
| CN108899406A (en) * | 2018-07-02 | 2018-11-27 | 江西科技师范大学 | A kind of highly reliable large power ultraviolet LED integrated encapsulation method |
| CN216133874U (en) * | 2021-08-30 | 2022-03-25 | 江西晶弘新材料科技有限责任公司 | Ceramic packaging substrate of low-stress metal dam |
| CN216133873U (en) * | 2021-08-30 | 2022-03-25 | 江西晶弘新材料科技有限责任公司 | Metal dam ceramic packaging substrate with excellent cold and hot impact resistance |
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