CN216133856U - Low-stress metal dam ceramic packaging substrate with special structure - Google Patents

Low-stress metal dam ceramic packaging substrate with special structure Download PDF

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Publication number
CN216133856U
CN216133856U CN202122061978.7U CN202122061978U CN216133856U CN 216133856 U CN216133856 U CN 216133856U CN 202122061978 U CN202122061978 U CN 202122061978U CN 216133856 U CN216133856 U CN 216133856U
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ceramic
metal
dam
base
layer
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CN202122061978.7U
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何浩波
郭晓泉
孔仕进
康为
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Jiangxi Jinghong New Material Technology Co ltd
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Jiangxi Jinghong New Material Technology Co ltd
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Abstract

The utility model discloses a low-stress metal dam ceramic packaging substrate with a special structure, which comprises a ceramic base layer, a front circuit layer, a back circuit layer and a metal dam, wherein the ceramic base layer is arranged on the front surface of the ceramic base layer; the upper surface and the lower surface of the ceramic base layer are penetrated to form a through groove, and the through groove is filled with metal slurry and solidified to form a base; the front surface circuit layer is formed on the front surface of the ceramic base layer; the back circuit layer is formed on the back of the ceramic base layer; the metal box dam is formed on the front face of the base and located on the periphery of the front face circuit layer, and the metal box dam forms an accommodating cavity. Through running through the upper and lower surface at ceramic substrate and being formed with logical groove, it is formed with the base to fill metal thick liquids and solidification in leading to the groove, deuterogamies the metal box dam shaping in the front of base, and the metal box dam does not have direct stress to ceramic substrate, makes the stress that ceramic substrate received reduce, improves the anti cold and hot impact property of product to prevent ceramic substrate dark split, and then the life-span of extension UVC module and the reliability that improves the UVC module.

Description

Low-stress metal dam ceramic packaging substrate with special structure
Technical Field
The utility model relates to the technical field of substrates, in particular to a low-stress metal dam ceramic packaging substrate with a special structure.
Background
Along with the deepening of medical sterilization industry gradually, the service environment is diversified more, and the UVC sterilization packaging module has higher and higher requirements on the heat dissipation of the ceramic substrate and the cold and hot impact resistance.
The traditional encapsulation substrate for the UVC cancels the traditional molidng process for anti-aging, adopts metal dam encapsulation, can avoid the aging problem, but the thermal expansion coefficient of metal and ceramic have great difference, and the stress of a base layer is overlarge in the encapsulation process, so that the base layer is dark and cracked, thereby the service life and the reliability of the UVC module are reduced. At present, how to reduce the stress of the ceramic substrate with the box dam structure and improve the cold and hot impact resistance of the ceramic substrate becomes a difficulty for improving the packaging yield of the UVC sterilization module. Therefore, there is a need for an improved metal dam package substrate.
SUMMERY OF THE UTILITY MODEL
In view of the above, the present invention is directed to the defects in the prior art, and a main object of the present invention is to provide a low-stress metal dam ceramic package substrate with a special structure, which can effectively solve the problem that the lifetime and reliability of the UVC module are reduced due to the base layer being cracked due to an excessive stress of the base layer in the packaging process of the conventional metal dam ceramic package substrate.
In order to achieve the purpose, the utility model adopts the following technical scheme:
a low-stress metal dam ceramic packaging substrate with a special structure comprises a ceramic base layer, a front circuit layer, a back circuit layer and a metal dam; the upper surface and the lower surface of the ceramic base layer are penetrated and formed with a via hole and a through groove, a via post is formed in the via hole, the through groove is positioned at the periphery of the via hole, and the through groove is filled with metal slurry and solidified to form a base; the front surface circuit layer is formed on the front surface of the ceramic base layer and is in conduction connection with the upper end of the conduction column; the back circuit layer is formed on the back of the ceramic base layer and is in conduction connection with the lower end of the conduction column; the metal box dam is formed on the front face of the base and located on the periphery of the front face circuit layer, and the metal box dam forms an accommodating cavity.
Preferably, the front surface of the base is flush with the front surface of the ceramic substrate.
Preferably, the back surface of the base is flush with the back surface of the ceramic substrate.
As a preferable scheme, the back surface of the ceramic base layer is formed with two heat dissipation layers, the two back surface circuit layers are respectively located at two sides of the heat dissipation layer, and ink is filled between the two back surface circuit layers and the heat dissipation layer to form a solder mask.
Preferably, the via hole is a vertical via hole.
Preferably, the inner periphery of the surface of the metal dam is recessed to form a embedding groove.
Preferably, the width of the base is the same as the width of the metal dam.
As a preferable scheme, the metal paste is copper paste, and the base is filled and molded by printing.
Compared with the prior art, the utility model has obvious advantages and beneficial effects, and specifically, the technical scheme includes that:
through running through the upper and lower surface at ceramic substrate and being formed with logical groove, it is formed with the base to fill metal thick liquids and solidification in leading to the groove, deuterogamies the metal box dam shaping in the front of base, and the metal box dam does not have direct stress to ceramic substrate, makes the stress that ceramic substrate received reduce, improves the anti cold and hot impact property of product to prevent ceramic substrate dark split, and then the life-span of extension UVC module and the reliability that improves the UVC module.
To more clearly illustrate the structural features and effects of the present invention, the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
Drawings
FIG. 1 is a cross-sectional view of a preferred embodiment of the present invention.
The attached drawings indicate the following:
10. ceramic base layer 11, via hole
12. Through groove 13 and conduction column
14. Base 20, front side circuit layer
30. Back side circuit layer 40 and metal dam
41. Accommodating cavity 42, embedding groove
50. Heat dissipation layer 60, solder mask.
Detailed Description
Referring to fig. 1, a specific structure of a preferred embodiment of the present invention is shown, which includes a ceramic substrate 10, a front circuit layer 20, a back circuit layer 30 and a metal dam 40.
A through hole 11 and a through groove 12 are formed through the upper and lower surfaces of the ceramic base layer 10, a through via 13 is formed in the through hole 11, the through groove 12 is located at the periphery of the through hole 13, and a base 14 is formed by filling metal slurry and curing the through groove 12; in this embodiment, the front surface of the base 14 is flush with the front surface of the ceramic substrate 10; the back of the base 14 is flush with the back of the ceramic substrate 10; a heat dissipation layer 50 is formed on the back surface of the ceramic substrate 10; the via hole 11 is a vertical via hole; the metal paste is copper paste, and the base 14 is formed by filling in a printing mode.
The front surface circuit layer 20 is formed on the front surface of the ceramic base layer 10 and is conductively connected with the upper end of the conductive via 13; the back circuit layer 30 is formed on the back of the ceramic substrate 10 and is conductively connected with the lower end of the conductive via 13; in this embodiment, there are two back circuit layers 30 respectively located at two sides of the heat dissipation layer 50, and the solder mask layer 60 is formed between the two back circuit layers 30 and the heat dissipation layer 50 by filling ink.
The metal dam 40 is formed on the front surface of the base 14 and located at the periphery of the front surface circuit layer 20, and the metal dam 40 forms an accommodating cavity 41; in this embodiment, the inner periphery of the surface of the metal dam 40 is recessed to form a recessed groove 42, and the width of the base 14 is the same as the width of the metal dam 40.
The manufacturing method of the embodiment is detailed as follows:
firstly, a via hole 11 and a through groove 12 penetrating through the upper and lower surfaces are formed on a ceramic base layer 10 by means of laser or CNC, a via hole 13 is formed in the via hole 11, a base 14 is formed by filling metal slurry in the through groove 12 and curing, then, a front surface circuit layer 20 is formed on the front surface of the ceramic base layer 10, a back surface circuit layer 30 and a heat dissipation layer 50 are formed on the back surface, then, a metal dam 30 is formed on the front surface of the base 14, the metal dam 30 is located on the periphery of the front surface circuit layer 20, and finally, ink is filled between the two back surface circuit layers 30 and the heat dissipation layer 50 to form a solder mask layer 60.
The design of the utility model is characterized in that:
through running through the upper and lower surface at ceramic substrate and being formed with logical groove, it is formed with the base to fill metal thick liquids and solidification in leading to the groove, deuterogamies the metal box dam shaping in the front of base, and the metal box dam does not have direct stress to ceramic substrate, makes the stress that ceramic substrate received reduce, improves the anti cold and hot impact property of product to prevent ceramic substrate dark split, and then the life-span of extension UVC module and the reliability that improves the UVC module.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the technical scope of the present invention, so that any minor modifications, equivalent changes and modifications made to the above embodiment according to the technical spirit of the present invention are within the technical scope of the present invention.

Claims (8)

1. The utility model provides a ceramic package substrate of metal box dam of low stress of special construction which characterized in that: comprises a ceramic base layer, a front circuit layer, a back circuit layer and a metal dam; the upper surface and the lower surface of the ceramic base layer are penetrated and formed with a via hole and a through groove, a via post is formed in the via hole, the through groove is positioned at the periphery of the via hole, and the through groove is filled with metal slurry and solidified to form a base; the front surface circuit layer is formed on the front surface of the ceramic base layer and is in conduction connection with the upper end of the conduction column; the back circuit layer is formed on the back of the ceramic base layer and is in conduction connection with the lower end of the conduction column; the metal box dam is formed on the front face of the base and located on the periphery of the front face circuit layer, and the metal box dam forms an accommodating cavity.
2. The specially structured low stress metal dam ceramic package substrate according to claim 1, wherein: the front surface of the base is flush with the front surface of the ceramic base layer.
3. The specially structured low stress metal dam ceramic package substrate according to claim 1, wherein: the back of base and ceramic substrate's back parallel and level.
4. The specially structured low stress metal dam ceramic package substrate according to claim 1, wherein: the back of ceramic substrate's shaping has the heat dissipation layer, and this back circuit layer is two, and it is located the both sides on heat dissipation layer respectively, all fills printing ink and is formed with the solder mask between two back circuit layers and the heat dissipation layer.
5. The specially structured low stress metal dam ceramic package substrate according to claim 1, wherein: the via holes are vertical via holes.
6. The specially structured low stress metal dam ceramic package substrate according to claim 1, wherein: and an embedding groove is formed in the concave inner periphery of the surface of the metal box dam.
7. The specially structured low stress metal dam ceramic package substrate according to claim 1, wherein: the width of the base is the same as that of the metal box dam.
8. The specially structured low stress metal dam ceramic package substrate according to claim 1, wherein: the metal slurry is copper slurry, and the base is filled and molded in a printing mode.
CN202122061978.7U 2021-08-30 2021-08-30 Low-stress metal dam ceramic packaging substrate with special structure Active CN216133856U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202122061978.7U CN216133856U (en) 2021-08-30 2021-08-30 Low-stress metal dam ceramic packaging substrate with special structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202122061978.7U CN216133856U (en) 2021-08-30 2021-08-30 Low-stress metal dam ceramic packaging substrate with special structure

Publications (1)

Publication Number Publication Date
CN216133856U true CN216133856U (en) 2022-03-25

Family

ID=80772109

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202122061978.7U Active CN216133856U (en) 2021-08-30 2021-08-30 Low-stress metal dam ceramic packaging substrate with special structure

Country Status (1)

Country Link
CN (1) CN216133856U (en)

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