CN209389058U - A kind of light emitting diode - Google Patents
A kind of light emitting diode Download PDFInfo
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- CN209389058U CN209389058U CN201822190829.9U CN201822190829U CN209389058U CN 209389058 U CN209389058 U CN 209389058U CN 201822190829 U CN201822190829 U CN 201822190829U CN 209389058 U CN209389058 U CN 209389058U
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- 239000002184 metal Substances 0.000 claims abstract description 140
- 239000011347 resin Substances 0.000 claims abstract description 65
- 229920005989 resin Polymers 0.000 claims abstract description 65
- 239000000084 colloidal system Substances 0.000 claims description 57
- 238000003466 welding Methods 0.000 claims description 35
- 238000004806 packaging method and process Methods 0.000 claims description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 8
- 230000035699 permeability Effects 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 168
- 238000005538 encapsulation Methods 0.000 description 18
- 239000008393 encapsulating agent Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
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- Led Device Packages (AREA)
Abstract
The utility model discloses a kind of light emitting diode, which includes: the first metal layer, second metal layer, resin portion, reflective layer and at least one LED chip；Resin portion is connected between the first metal layer and second metal layer, at least one LED chip is installed on the upper surface of the first metal layer, and the surrounding that reflective layer is set at least one LED chip forms reflective bowl；The lower surface of the first metal layer is provided with the first weld metal layers, and the first weld metal layers are provided at least one first groove close to one end of resin portion；The lower surface of second metal layer is provided with the second weld metal layers, and the second weld metal layers are provided at least one second groove close to one end of resin portion.The light emitting diode of the utility model can effectively increase the connection yield of light emitting diode, improve the reliability of light emitting diode.
Description
Technical Field
The utility model relates to a LED technical field especially relates to a light emitting diode.
Background
The light emitting diode has been widely used in the fields of general illumination, backlight modules and the like because of its advantages of high luminous efficiency, long service life and the like. Fig. 1 is a schematic structural diagram of a conventional light emitting diode. The conventional light emitting diode includes a first metal layer 101, a second metal layer 102, a light reflecting layer 200, a resin portion 103, an LED chip 300, and a package glue layer 400, wherein the first metal layer 101, the second metal layer 102, and the resin portion 103 form a support, and the LED chip 300 is fixed on the first metal layer 101.
In the manufacturing process of the bracket, because the thermal expansion coefficients of the metal layer and the resin part are different, the metal layer and the resin part have gaps due to inconsistent heating processes; or, the bracket collides with the clamping jig, so that the bracket deforms, and a gap exists between the metal layer and the resin part. When a gap exists between the metal layer and the resin part, in the process of packaging the light emitting diode, the packaging silica gel is easy to leak from the gap and adhere to the back surface of the metal layer, and further poor connection of the light emitting diode is caused.
SUMMERY OF THE UTILITY MODEL
To the above problem, the utility model discloses a light emitting diode can effectively increase light emitting diode's connection yield, improves light emitting diode's reliability.
In order to solve the above technical problem, the utility model discloses a light emitting diode, include: the LED chip comprises a first metal layer, a second metal layer, a resin part, a light reflecting layer and at least one LED chip; wherein,
the resin part is connected between the first metal layer and the second metal layer, the at least one LED chip is arranged on the upper surface of the first metal layer, and the reflecting layer is arranged on the periphery of the at least one LED chip to form a reflecting bowl cup;
a first welding metal layer is arranged on the lower surface of the first metal layer, and at least one first groove is formed in one end, close to the resin part, of the first welding metal layer;
and a second welding metal layer is arranged on the lower surface of the second metal layer, and at least one second groove is formed in one end, close to the resin part, of the second welding metal layer.
Compared with the prior art, the utility model discloses an among the emitting diode, first metal level, second metal level and resin portion constitute the support, and wherein, first metal level is used for bearing at least one LED chip, and first metal level and second metal level have the heat conduction effect. Because the first groove is arranged on the first welding metal layer positioned on the lower surface of the first metal layer, the second groove is arranged on the second welding metal layer positioned on the lower surface of the second metal layer, and the first groove and the second groove are both close to the resin part, when a gap exists between the resin part and the first metal layer or the second metal layer, the first groove or the second groove can contain the packaging colloid leaked from the gap, the overlarge area of the packaging colloid layer attached to the back surface of the first welding metal layer or the back surface of the second welding metal layer is avoided, the connection yield of the light-emitting diode can be increased, and the reliability of the light-emitting diode is improved.
As an improvement of the above scheme, at least one first drainage groove is arranged on the first convex part of the first groove, and the first drainage groove is communicated with the first groove; the first convex part of the first groove is a convex part of the first groove close to the resin part;
the first convex part of the second groove is provided with at least one second drainage groove which is communicated with the second groove; the first convex portion of the second groove is a convex portion of the second groove close to the resin portion.
As a modification of the above, the first and second convex portions of the first groove and the first and second convex portions of the second groove are flush with the bottom surface of the resin portion; wherein the second convex part of the first groove is a convex part far away from the resin part, and the second convex part of the second groove is a convex part far away from the resin part.
As a modification of the above, the total area of the first groove and the second groove is less than 20% of the total area of the first solder metal layer and the second solder metal layer.
As an improvement of the scheme, at least a first packaging colloid layer and a second packaging colloid layer are sequentially laminated in the reflecting bowl from bottom to top; wherein the viscosity of the first packaging colloid layer is within 100-7000 mPa.s, and the moisture and oxygen permeability is 0cc/cm2·day/1mm～1000cc/cm2Day/1 mm; the viscosity of the first packaging colloid layer is smaller than that of the second packaging colloid layer, and the moisture and oxygen permeable layer rate of the first packaging colloid layer is smaller than that of the second packaging colloid layer.
As an improvement of the above scheme, a third encapsulation colloid layer is arranged on the second encapsulation colloid layer, and the moisture permeable oxygen permeability rate of the third encapsulation colloid layer is smaller than the moisture permeable oxygen permeability rate of the second encapsulation colloid layer.
As an improvement of the above scheme, the first package colloid layer includes a first YAG phosphor layer, the second package colloid layer includes a second YAG phosphor layer, and the third package colloid layer includes a KFS phosphor layer and a green phosphor layer.
As an improvement of the above scheme, a first metal reflective layer is disposed on the upper surface of the first metal layer, and a second metal reflective layer is disposed on the upper surface of the second metal layer.
As a modification of the above, the resin portion has an inverted T shape; a first fault is arranged at one end, close to the resin part, of the first metal layer, and a second fault is arranged at one end, close to the resin part, of the second metal layer; the first and second fracture surfaces are engaged with and closely connected to both ends of the resin portion, respectively.
The utility model also provides a manufacturing method of emitting diode is applicable to the support that has first welding metal level and second welding metal level, wherein, first welding metal level set up in the lower surface of first metal level, second welding metal level set up in the lower surface of second metal level, manufacturing method includes following step:
stamping at least one first groove at one end of the first welding metal layer close to the resin part and stamping at least one second groove at one end of the second welding metal layer close to the resin part by adopting a stamping process;
manufacturing a reflective layer on the bracket by adopting an in-mold injection molding process to form a reflective bowl cup;
fixing at least one LED chip at the bottom of the reflecting bowl cup and routing;
injecting a first packaging colloid into the reflective bowl cup and heating and curing to form a first packaging colloid layer;
and injecting a second packaging colloid into the reflective bowl cup and heating and curing.
Compared with the prior art, in the manufacturing method of the light emitting diode of the utility model, the first metal layer, the second metal layer and the resin part form a bracket, because the first groove is formed on the first welding metal layer positioned on the lower surface of the first metal layer by stamping, the second groove is formed on the second welding metal layer positioned on the lower surface of the second metal layer by stamping, and the first groove and the second groove are both close to the resin part, when a gap exists between the resin part and the first metal layer or the second metal layer, the gap can be filled by injecting the first packaging colloid into the reflector cup and heating and curing, and the redundant first packaging colloid is accommodated by the first groove or the second groove, the area of the packaging colloid attached to the back surface of the first welding metal layer or the second welding metal layer is too large, the connection yield of the light emitting diode is increased, the reliability of the light emitting diode is improved.
As an improvement of the above scheme, the method comprises the steps of respectively stamping at least one first groove on the first weld metal layer and stamping at least one second groove on the second weld metal layer by a stamping process, and further comprises the following steps:
stamping at least one first drainage groove on the first convex part of the first groove, wherein the first drainage groove is communicated with the first groove; the first convex part of the first groove is a convex part of the first groove close to the resin part;
stamping at least one second drainage groove on the first convex part of the second groove, wherein the second drainage groove is communicated with the second groove; the first convex portion of the second groove is a convex portion of the second groove close to the resin portion.
Drawings
Fig. 1 is a schematic structural diagram of a conventional light emitting diode.
Fig. 2 is a schematic structural diagram of a light emitting diode according to embodiment 1 of the present invention.
Fig. 3 is a back structure view of the first and second solder metal layers in embodiment 1 of the present invention.
Fig. 4 is a schematic structural diagram of a light emitting diode according to embodiment 2 of the present invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The invention can be embodied in many other forms without departing from the spirit or essential characteristics thereof, and it should be understood that the invention is not limited to the specific embodiments disclosed below.
The technical solution of the present invention is clearly and completely described with reference to the specific embodiments and the accompanying drawings.
Example 1
Fig. 2 is a schematic structural diagram of a light emitting diode according to embodiment 1 of the present invention.
As shown in fig. 2, the light emitting diode includes: a first metal layer 11, a second metal layer 12, a resin part 13, a light reflecting layer 2 and at least one LED chip 3; the resin part 13 is connected between the first metal layer 11 and the second metal layer 12, the at least one LED chip 3 is arranged on the upper surface of the first metal layer 11, and the reflecting layer 2 is arranged around the at least one LED chip 3 to form a reflecting bowl cup; the lower surface of the first metal layer 11 of the encapsulation colloid layer 4 in the reflector is provided with a first welding metal layer 51, and one end of the first welding metal layer 51 close to the resin part 13 is provided with at least one first groove 511; the lower surface of the second metal layer 12 is provided with a second solder metal layer 52, and one end of the second solder metal layer 52 near the resin portion 13 is provided with at least one second groove 521.
Compared with the prior art, in the light emitting diode of the present invention, the first metal layer 11, the second metal layer 12 and the resin portion 13 constitute a support, wherein the first metal layer 11 is used for bearing at least one LED chip 3, and the first metal layer 11 and the second metal layer 12 have a heat conducting function. Because the first groove 511 is formed in the first bonding metal layer 51 located on the lower surface of the first metal layer 11, the second groove 521 is formed in the second bonding metal layer 52 located on the lower surface of the second metal layer 12, and both the first groove 511 and the second groove 521 are close to the resin portion 13, when a gap exists between the resin portion 13 and the first metal layer 11 or the second metal layer 12, the first groove 511 or the second groove 521 can accommodate the encapsulant leaking from the gap, so that the problem that the area of the encapsulant layer attached to the back surface of the first bonding metal layer 51 or the second bonding metal layer 52 is too large is avoided, the connection yield of the light emitting diode can be increased, and the reliability of the light emitting diode is improved.
Further, as shown in fig. 2 and 3, in order to facilitate the encapsulant in the gap to flow into the first groove 511 or the second groove 521, so that the encapsulant forms an encapsulant layer with a uniform thickness in the first groove 511 or the second groove 521, at least one first drainage groove 512 is formed in a first convex portion of the first groove 511, and the first drainage groove 512 is communicated with the first groove 511; the first convex portion of the first concave groove 511 is a convex portion of the first concave groove 511 close to the resin portion 13; at least one second drainage groove 522 is formed in the first convex part of the second groove 521, and the second drainage groove 522 is communicated with the second groove 521; the first convex portion of second concave groove 521 is a convex portion of second concave groove 521 near resin portion 13.
Preferably, as shown in fig. 2, in order to facilitate the encapsulant to flow into the first recess 511 or the second recess 521, the first and second protrusions of the first recess 511 and the first and second protrusions of the second recess 521 are flush with the bottom surface of the resin part 13; wherein the second convex portion of the first concave groove 511 is a convex portion away from the resin portion 13, and the second convex portion of the second concave groove 521 is a convex portion away from the resin portion 13.
Preferably, in the light emitting diode, the total area of the first and second grooves 511 and 521 is less than 20% of the total area of the first and second solder metal layers 51 and 52, so that the first and second solder metal layers 51 and 52 have a large contact area when a subsequent packaging process is performed. For example, the total area of the first and second grooves 511 and 521 may be 10% or 1% of the total area of the first and second solder metal layers 51 and 52.
Example 2
Fig. 4 is a schematic structural diagram of a light emitting diode according to embodiment 2 of the present invention.
As shown in fig. 4, except that the light emitting diode includes all the components in embodiment 1, the encapsulation colloid layer of the light emitting diode includes a first encapsulation colloid layer 41 and a second encapsulation colloid layer 42, and the first encapsulation colloid layer 41 and the second encapsulation colloid layer 42 are sequentially stacked from bottom to top in the reflective bowl; wherein the viscosity of the first packaging colloid layer 41 is within 100-7000 mPas, and the moisture and oxygen permeability is 0cc/cm2·day/1mm～1000cc/cm2Day/1 mm; the viscosity of the first packaging colloid layer 41 is less than that of the second packaging colloid layer 42, and the moisture and oxygen permeable layer rate of the first packaging colloid layer 41 is less than that of the second packaging colloid layer 42.
In this embodiment, since the first encapsulant layer 41 is located within 100 to 7000mPa · s, and has a low viscosity and a high fluidity, the first encapsulant layer 41 is easily filled in the gap between the first metal layer 11 or the second metal layer 12 and the resin portion 13 in the process of forming the encapsulant layer; meanwhile, since a small amount of the first encapsulation colloid layer 41 is arranged at the bottom of the reflective bowl cup, excessive colloid can be prevented from leaking into the first groove 511 or the second groove 521 under the condition of filling the gap, the excessive colloid is prevented from being adhered to the first welding metal layer 51 or the second welding metal layer 52, and the connection yield of the first welding metal layer 51 or the second welding metal layer 52 can be further improved; in addition, since the second encapsulant layer 42 is stacked on the first encapsulant layer 41, oxygen and moisture can be further prevented from entering the first encapsulant layer 41 and the LED chip 3 from the upper portion of the reflective cup, thereby protecting the reflective cup. In addition, the moisture and oxygen permeability of the first packaging colloid layer 41 is 0cc/cm2·day/mm～1000cc/cm2Within day/mm, the moisture and oxygen permeability is low, and moisture and oxygen can be prevented from permeating into the bracket and the reflective bowl cup through gaps, so that the first packaging adhesive layer 41 can effectively protect the bracket and the reflective bowl cup, and the service life of the light-emitting diode is prolonged.
Preferably, in order to increase the strength of the light emitting diode, a third encapsulation colloid layer 43 is disposed on the second encapsulation colloid layer 42, and the moisture and oxygen permeable rate of the third encapsulation colloid layer 43 is less than that of the second encapsulation colloid layer 42, so as to further play a role in moisture and oxygen resistance.
Preferably, in order to increase the light emitting efficiency of the light emitting diode, the first encapsulation colloid layer 41 includes a first YAG phosphor layer, the second encapsulation colloid layer 42 includes a second YAG phosphor layer, and the third encapsulation colloid layer 43 includes a KFS phosphor layer and a green phosphor layer.
Optionally, in order to further increase the light emitting efficiency of the light emitting diode, a first metal reflective layer 41 is disposed on the upper surface of the first metal layer 11, and a second metal reflective layer 42 is disposed on the upper surface of the second metal layer 12, so as to reflect light rays in the reflective bowl, and improve the light emitting intensity of the light emitting diode.
Preferably, as shown in fig. 4, in the light emitting diode, the resin portion 13 has an inverted T shape; a first fault is arranged at one end of the first metal layer 11 close to the resin part 13, and a second fault is arranged at one end of the second metal layer 12 close to the resin part 13; the first fault and the fault are respectively engaged and tightly connected with two ends of the resin part 13, so that the combination path between the first metal layer 11 or the second metal layer 12 and the resin part 13 can be effectively increased to accommodate more first packaging colloid layers 41, and the excessive first packaging colloid layers 41 are prevented from being attached to the first welding metal layer 51 and the second welding metal layer 52; meanwhile, since the bonding path between the first metal layer 11 or the second metal layer 12 and the resin part 13 is increased, the path for moisture and oxygen to permeate is increased, and the ability of the light emitting diode to block moisture and oxygen from permeating can be improved.
It should be noted that, as shown in fig. 4, when the light emitting diode of the present invention is used for SMT welding, since the first groove 511 or the second groove 521 can accommodate the package colloid leaking from the gap, the coverage area of the package colloid layer 41 formed on the first welding metal layer 51 or the second welding metal layer 52 is prevented from being too large, and then deviation during SMT welding can be prevented, thereby improving the yield of SMT welding.
In the above embodiments, the first encapsulant layer 41 or the second encapsulant layer 42 includes one or more combinations of silicone, and epoxy.
Optionally, the first package glue layer 41 or the second package glue layer 42 is a phosphor layer with phosphor.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any form, so that any simple modification, equivalent change and modification made by the technical entity of the present invention to the above embodiments without departing from the technical solution of the present invention all fall within the scope of the technical solution of the present invention.
Claims (9)
1. A light emitting diode, comprising: the LED chip comprises a first metal layer, a second metal layer, a resin part, a light reflecting layer and at least one LED chip; wherein,
the resin part is connected between the first metal layer and the second metal layer, the at least one LED chip is arranged on the upper surface of the first metal layer, and the reflecting layer is arranged on the periphery of the at least one LED chip to form a reflecting bowl cup;
a first welding metal layer is arranged on the lower surface of the first metal layer, and at least one first groove is formed in one end, close to the resin part, of the first welding metal layer;
and a second welding metal layer is arranged on the lower surface of the second metal layer, and at least one second groove is formed in one end, close to the resin part, of the second welding metal layer.
2. The light-emitting diode according to claim 1, wherein at least one first drainage groove is provided at the first convex portion of the first groove, the first drainage groove communicating with the first groove; the first convex part of the first groove is a convex part of the first groove close to the resin part;
the first convex part of the second groove is provided with at least one second drainage groove which is communicated with the second groove; the first convex portion of the second groove is a convex portion of the second groove close to the resin portion.
3. The light-emitting diode according to claim 2, wherein the first convex portion and the second convex portion of the first groove, and the first convex portion and the second convex portion of the second groove are flush with a bottom surface of the resin portion; wherein the second convex part of the first groove is a convex part far away from the resin part, and the second convex part of the second groove is a convex part far away from the resin part.
4. The light-emitting diode of claim 2, wherein the total area of the first recess and the second recess is less than 20% of the total area of the first solder metal layer and the second solder metal layer.
5. The light-emitting diode according to claim 1, wherein at least a first encapsulating glue layer and a second encapsulating glue layer are sequentially laminated from bottom to top in the light-reflecting bowl cup; wherein the viscosity of the first packaging colloid layer is within 100-7000 mPas, and the moisture and oxygen permeability is 0cc/cm2·day/1mm～1000cc/cm2Day/1 mm; the viscosity of the first packaging colloid layer is smaller than that of the second packaging colloid layer, and the moisture and oxygen permeable layer rate of the first packaging colloid layer is smaller than that of the second packaging colloid layer.
6. The light-emitting diode according to claim 5, wherein a third encapsulating colloid layer is disposed on the second encapsulating colloid layer, and the moisture-permeable oxygen-permeable layer rate of the third encapsulating colloid layer is smaller than the moisture-permeable oxygen-permeable rate of the second encapsulating colloid layer.
7. The light emitting diode of claim 6, wherein the first encapsulating glue layer comprises a first YAG phosphor layer, the second encapsulating glue layer comprises a second YAG phosphor layer, and the third encapsulating glue layer comprises a KFS phosphor layer and a green phosphor layer.
8. The led of claim 1, wherein the first metal layer has a first metal reflective layer on an upper surface thereof, and the second metal layer has a second metal reflective layer on an upper surface thereof.
9. The light-emitting diode according to claim 1, wherein the resin portion has an inverted T shape; a first fault is arranged at one end, close to the resin part, of the first metal layer, and a second fault is arranged at one end, close to the resin part, of the second metal layer; the first and second fracture surfaces are engaged with and closely connected to both ends of the resin portion, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822190829.9U CN209389058U (en) | 2018-12-25 | 2018-12-25 | A kind of light emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822190829.9U CN209389058U (en) | 2018-12-25 | 2018-12-25 | A kind of light emitting diode |
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| Publication Number | Publication Date |
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| CN209389058U true CN209389058U (en) | 2019-09-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109817785A (en) * | 2018-12-25 | 2019-05-28 | 广东晶科电子股份有限公司 | A kind of light emitting diode and preparation method thereof |
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- 2018-12-25 CN CN201822190829.9U patent/CN209389058U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109817785A (en) * | 2018-12-25 | 2019-05-28 | 广东晶科电子股份有限公司 | A kind of light emitting diode and preparation method thereof |
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