CN216039929U - Thermal field device and single crystal furnace - Google Patents
Thermal field device and single crystal furnace Download PDFInfo
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- CN216039929U CN216039929U CN202120853187.5U CN202120853187U CN216039929U CN 216039929 U CN216039929 U CN 216039929U CN 202120853187 U CN202120853187 U CN 202120853187U CN 216039929 U CN216039929 U CN 216039929U
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Abstract
The application discloses thermal field device and single crystal growing furnace relates to solar photovoltaic technology field. The thermal field apparatus may specifically include: the heat insulation device comprises a first heat insulation cylinder, an intermediate connecting piece and a second heat insulation cylinder; one end of a first heat-preserving cylinder is connected with one end of a second heat-preserving cylinder through an intermediate connecting piece, and the first heat-preserving cylinder, the second heat-preserving cylinder and the intermediate connecting piece are coaxially arranged and enclose to form a lifting channel for drawing a silicon rod; wherein, the inner diameter size of the first heat-preserving cylinder and the inner diameter size of the second heat-preserving cylinder are arranged in a preset proportion. In the embodiment of the application, the proportion between the inner diameter sizes of the first heat-preserving cylinder and the second heat-preserving cylinder is optimized, so that the flow direction of air flow in the lifting channel can be adjusted, the generation of cyclone in the lifting channel is avoided, more oxygen-containing waste gas is discharged in time, the oxygen content of a silicon rod is reduced, and the quality of monocrystalline silicon is improved.
Description
Technical Field
The application belongs to the technical field of solar photovoltaic, and particularly relates to a thermal field device and a single crystal furnace.
Background
With the development of photovoltaic technology, monocrystalline silicon is used as an important raw material for manufacturing solar cells, and the demand is increasing, so that higher and higher requirements on the quality of the monocrystalline silicon are provided.
In recent years, a production process of single crystal silicon is mainly Czochralski (CZ) method, but in the production process of single crystal silicon by czochralski method, oxygen impurities are inevitably introduced into a silicon rod due to the influence of factors such as distribution of a thermal field in a single crystal furnace and flow direction of gas flow in the thermal field, so that the oxygen content of the silicon rod is high, and the quality of the single crystal silicon is reduced.
SUMMERY OF THE UTILITY MODEL
The embodiment of the application aims to provide a thermal field device and a single crystal furnace, which can effectively reduce the problem of high oxygen content of a silicon rod.
In order to solve the technical problem, the present application is implemented as follows:
in a first aspect, an embodiment of the present application provides a thermal field apparatus, including: the heat insulation device comprises a first heat insulation cylinder, an intermediate connecting piece and a second heat insulation cylinder;
one end of the first heat-preserving cylinder is connected with one end of the second heat-preserving cylinder through the intermediate connecting piece, and the first heat-preserving cylinder, the second heat-preserving cylinder and the intermediate connecting piece are coaxially arranged and enclose to form a lifting channel for drawing a silicon rod;
the inner diameter of the first heat-insulating cylinder and the inner diameter of the second heat-insulating cylinder are arranged in a preset proportion.
Optionally, the preset ratio between the inner diameter of the first heat-preserving cylinder and the inner diameter of the second heat-preserving cylinder is 10: 9.7-10: 8.5.
Optionally, the inner diameter of the intermediate connecting piece is the same as that of the second heat-preserving cylinder;
and/or the outer diameter of the intermediate connecting piece is the same as that of the first heat-preserving cylinder.
Optionally, the inner diameter of the first heat-preserving cylinder is 3% to 18% larger than the inner diameter of the second heat-preserving cylinder, and the first heat-preserving cylinder is arranged below the second heat-preserving cylinder. .
Optionally, the thermal field apparatus further comprises: a heat preservation cover;
the heat-insulating cover is provided with a lifting through hole, at least part of the heat-insulating cover covers the other end of the second heat-insulating cylinder, and the lifting through hole is opposite to the lifting channel.
Optionally, one side of the heat preservation cover close to the second heat preservation cylinder is provided with a first groove, the first groove is close to the center of the heat preservation cover and extends along the circumferential direction of the heat preservation cover.
Optionally, in the direction from the second heat-preservation cylinder to the heat-preservation cover, the ratio of the depth of the first groove to the thickness of the heat-preservation cover is 1: 5-1: 2.
Optionally, a second groove is formed in the end face, close to the second heat-insulating cylinder, of the intermediate connecting piece, and the second groove is close to the center of the intermediate connecting piece and extends along the circumferential direction of the intermediate connecting piece;
one end of the second heat-preserving cylinder is arranged in the second groove.
Optionally, a third groove is formed in the end face, close to the first heat preservation cylinder, of the intermediate connection piece, and the third groove extends along the circumferential edge of the intermediate connection piece;
one end of the first heat-preserving cylinder is arranged in the third groove.
In a second aspect, the application also provides a single crystal furnace comprising the thermal field device.
In the embodiment of the application, the first heat-preserving cylinder, the second heat-preserving cylinder and the intermediate connecting piece are coaxially arranged and enclose to form a pulling channel for pulling the silicon rod, and the inner diameter of the first heat-preserving cylinder and the inner diameter of the second heat-preserving cylinder are arranged in a preset proportion, so that the temperature gradient in the heat-preserving cylinders can be adjusted by optimizing the proportion between the inner diameters of the first heat-preserving cylinder and the second heat-preserving cylinder, the gas flow direction in the pulling channel can be adjusted, the generation of cyclone in the pulling channel can be avoided, the time of gas staying in a thermal field can be shortened, more oxygen-containing waste gas generated in the crystal pulling process can be timely discharged, the oxygen content of the silicon rod can be reduced, and the quality of the monocrystalline silicon can be improved.
Drawings
FIG. 1 is a schematic structural diagram of a thermal field apparatus according to an embodiment of the present application;
FIG. 2 is a schematic cross-sectional view of an insulating cover according to an embodiment of the present disclosure;
FIG. 3 is a schematic cross-sectional view of an intermediate connector according to an embodiment of the present application;
FIG. 4 is a schematic cross-sectional view of a second thermal insulation cylinder according to an embodiment of the present application.
Description of reference numerals:
10: a first heat-preserving cylinder; 20: an intermediate connecting member; 30: a second heat-preserving cylinder; 40: a heat preservation cover; 50: a furnace barrel; 11: a pull channel; 41: a first groove; 42: pulling the through hole; 21: a second groove; 22: a third groove; 31: and a fourth groove.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms first, second and the like in the description and in the claims of the present application are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application are capable of operation in sequences other than those illustrated or described herein. In addition, "and/or" in the specification and claims means at least one of connected objects, a character "/" generally means that a preceding and succeeding related objects are in an "or" relationship.
The thermal field device and the single crystal furnace provided by the embodiments of the present application are described in detail below with reference to the accompanying drawings through specific embodiments and application scenarios thereof.
Referring to fig. 1, a schematic structural diagram of a thermal field apparatus according to an embodiment of the present application is shown. Referring to fig. 2, a schematic cross-sectional structure diagram of the heat preservation cover according to the embodiment of the present application is shown. Referring to fig. 3, a schematic cross-sectional structure of an intermediate connector according to an embodiment of the present application is shown. Referring to fig. 4, a schematic cross-sectional structure of a second heat-preservation cylinder according to an embodiment of the present application is shown.
In the embodiment of the present application, the thermal field device may specifically include: a first heat-insulating cylinder 10, an intermediate connecting piece 20 and a second heat-insulating cylinder 30; one end of the first heat-preserving cylinder 10 is connected with one end of the second heat-preserving cylinder 30 through an intermediate connecting piece 20, and the first heat-preserving cylinder 10, the second heat-preserving cylinder 30 and the intermediate connecting piece 20 are coaxially arranged and enclose to form a lifting channel 11 for drawing a silicon rod; wherein, the inner diameter of the first heat-preserving cylinder 10 and the inner diameter of the second heat-preserving cylinder 30 are arranged in a preset proportion.
In the embodiment of the application, the first heat-preserving cylinder 10, the second heat-preserving cylinder 30 and the intermediate connecting piece 20 are coaxially arranged and enclose to form the pulling channel 11 for pulling the silicon rod, and the inner diameter of the first heat-preserving cylinder 10 and the inner diameter of the second heat-preserving cylinder 30 are arranged in a preset proportion, so that the proportion between the inner diameters of the first heat-preserving cylinder 10 and the second heat-preserving cylinder 30 can be optimized, the temperature gradient in the heat-preserving cylinders can be adjusted, the flow direction of the air flow in the pulling channel 11 can be adjusted, the generation of cyclone in the pulling channel 11 can be avoided, the residence time of the air in a thermal field can be shortened, more oxygen-containing waste gas generated in the crystal pulling process can be timely discharged, the oxygen content of the silicon rod can be reduced, and the quality of monocrystalline silicon can be improved.
In the embodiment of the present application, the first heat-preserving cylinder 10 may also be referred to as a main heat-preserving cylinder, and the second heat-preserving cylinder 30 may also be referred to as an upper heat-preserving cylinder, wherein the main heat-preserving cylinder is disposed close to the crucible. In practical applications, the main thermal insulation cylinder is closer to the heating device such as the crucible and the heater, so that the temperature of the gas in the main thermal insulation cylinder is higher, and the high-temperature gas in the main thermal insulation cylinder generally rises toward the second thermal insulation cylinder 30. In the process of stretching the monocrystalline silicon, in order to reduce the content of oxygen-containing waste gas in the thermal field, argon gas and the like are generally filled in the thermal field, so that on one hand, the silicon rod can be protected to avoid the silicon rod from being polluted, on the other hand, the detention time of the gas in the thermal field can be shortened, more oxygen-containing waste gas generated in the crystal pulling process can be discharged in time, and further the oxygen content in the silicon rod is reduced.
In the embodiment of the present application, the intermediate connection member 20 may also be referred to as a transition plate, and functions to connect the first heat-preserving container 10 and the second heat-preserving container 30.
In practical applications, the inner diameter of the second thermal insulation cylinder 30 is generally smaller than the inner diameter of the first thermal insulation cylinder 10. In the embodiment of the application, the preset ratio of the inner diameter of the first heat-preserving cylinder 10 to the inner diameter of the second heat-preserving cylinder 30 is 10: 9.7-10: 8.5. In the embodiment of the application, by optimizing the ratio of the inner diameter of the second heat-insulating cylinder 30 to the inner diameter of the first heat-insulating cylinder 10, the overall flow direction of the gas path in the heat field of the single crystal furnace can be effectively changed, the probability of oxygen (oxygen-containing waste gas) discharge is increased, the cyclone airflow direction generated among the first heat-insulating cylinder 10, the second heat-insulating cylinder 30 and the intermediate connecting piece 20 is improved, the generation of cyclone is weakened or even avoided, so that more oxygen-containing waste gas is taken away by argon gas, and the purpose of reducing the oxygen content of the silicon rod is achieved.
Preferably, the preset ratio of the inner diameter size of the first heat-preservation cylinder 10 to the inner diameter size of the second heat-preservation cylinder 30 is 10: 9.6-10: 9. Or, the inner diameter of the second heat-preserving cylinder 30 may be 90% to 96% of the inner diameter of the first heat-preserving cylinder 10, so that the flow direction of the gas flow in the pulling channel 11 may be smoother, more oxygen-containing waste gas may be taken away, and the oxygen content in the silicon rod may be lower.
In the embodiment of the present application, the inner diameter of the first heat-preserving cylinder 10 is 3% to 18% larger than the inner diameter of the second heat-preserving cylinder 30, and the first heat-preserving cylinder 10 is disposed below the second heat-preserving cylinder 30. Namely, the lifting passage formed by the first heat-preserving cylinder 10, the intermediate connecting member 20 and the second heat-preserving cylinder 30 has a structure with a large lower part and a small upper part.
In the embodiment of the present application, in order to avoid the generation of the cyclone between the second heat-insulating cylinder 30 and the intermediate connecting member 20, the inner diameter of the intermediate connecting member 20 may be set to be the same as the inner diameter of the second heat-insulating cylinder 30, so that the air flow in the lifting channel 11 may be smoother, and the generation of an air flow dead angle region at the position where the second heat-insulating cylinder 30 is connected to the intermediate connecting member 20 due to a large difference in the inner diameters of the two heat-insulating cylinders is avoided.
Alternatively, the outer diameter of the intermediate connector 20 is the same as that of the first heat-insulating cylinder 10.
In the embodiment of the present application, the intermediate connector 20 may function to connect and support the first insulating cylinder 10 and the second insulating cylinder 30. In practical application, the outer diameter of the intermediate connector 20 is the same as that of the first heat-insulating cylinder 10, so that the volume of the intermediate connector 20 can be reduced, and the cost of the intermediate connector 20 can be reduced.
In practical applications, the materials of the first heat-preserving cylinder 10, the second heat-preserving cylinder 30 and the intermediate connecting member 20 may be the same or different. Specifically, the materials for manufacturing the first insulating cylinder 10, the second insulating cylinder 30 and the intermediate connecting member 20 may include, but are not limited to, carbon-carbon composite materials, graphite, and the like.
In the embodiment of the application, the thermal field can be insulated by using the first insulation cylinder 10 and the second insulation cylinder 30, so that the heat loss is reduced.
Optionally, the thermal field apparatus may further include: a heat-insulating cover 40; the heat preservation cover 40 is provided with a lifting through hole 42, the heat preservation cover 40 at least partially covers the other end of the second heat preservation cylinder 30, and the lifting through hole 42 is opposite to the lifting channel 11.
In practical applications, the heat-insulating cover 40 may also be understood as being disposed directly above the second heat-insulating cylinder 30 and disposed coaxially with the second heat-insulating cylinder 30, and the pulling through hole 42 may serve as a pulling through hole for the silicon rod, so as to ensure the quality of the silicon rod. The heat-insulating cover 40 is used for stabilizing the temperature of the thermal field in the single crystal furnace.
In the embodiment of the application, in order to increase the volume of the thermal field of the pulling channel above the crucible, a first groove 41 is arranged on one side of the heat-insulating cover 40 close to the second heat-insulating cylinder 30, and the first groove 41 is arranged close to the center of the heat-insulating cover 40 and extends along the circumferential direction of the heat-insulating cover 40. In practical applications, the first groove 41 may also be referred to as a first step structure. The arrangement of the first groove 41 can reduce the material consumption of the heat preservation cover 40, reduce the cost of the heat preservation cover 40, and reduce the weight of the heat preservation cover 40. Specifically, the ratio of the depth of the first groove 41 to the thickness of the heat-insulating cover 40 along the direction from the second heat-insulating cylinder 30 to the heat-insulating cover 40 is 1:5 to 1: 2. Preferably, the depth of the first groove 41 is one third of the thickness of the heat-insulating cover 40, so that the strength of the heat-insulating cover 40 can be ensured, and the volume of the thermal field of the lifting channel 11 can be effectively increased.
In the embodiment of the application, the first groove 41 is formed in the heat-insulating cover 40, so that the space of the thermal field can be effectively increased, the temperature gradient of the thermal field is optimized, the internal gas rotation of the thermal field is weakened, the gas flow direction of the thermal field is improved, the time of gas staying in the thermal field is shortened, more oxygen-containing waste gas generated in the crystal pulling process can be discharged in time, the oxygen content of the silicon rod is effectively reduced, and the quality of the silicon rod is improved.
Optionally, a second groove 21 is formed in the end surface of the intermediate connecting member 20 close to the second heat-insulating cylinder 30, and the second groove 21 is close to the center of the intermediate connecting member 20 and extends along the circumferential direction of the intermediate connecting member 20; one end of the second heat-preserving cylinder 30 is arranged in the second groove 21.
In the embodiment of the present application, the second groove 21 may be referred to as a second step structure. The size of the second groove 21 is matched with the outer diameter of the second heat-preserving cylinder 30. One end through with a second heat preservation section of thick bamboo 30 sets up in second recess 21, and second recess 21 can play spacing and guide's effect, can effectively reduce the difficulty of being connected of a middle connecting piece 20 and a second heat preservation section of thick bamboo 30, promotes the joint strength between a middle connecting piece 20 and a second heat preservation section of thick bamboo 30.
Optionally, the end surface of the intermediate connector 20 close to the first heat-insulating cylinder 10 is provided with a third groove 22, and the third groove 22 extends along the circumferential edge of the intermediate connector 20; one end of the first heat-preserving container 10 is arranged in the third groove 22.
In the embodiment of the present application, the third groove 22 may be referred to as a third step structure. The size of the third groove 22 matches the size of the outer diameter of the first heat-insulating cylinder 10. One end through with a heat preservation section of thick bamboo 10 sets up in third recess 22, and third recess 22 can play spacing and guide's effect, can effectively reduce the difficulty of being connected of intermediate junction spare 20 and a heat preservation section of thick bamboo 10, promotes the joint strength between intermediate junction spare 20 and a heat preservation section of thick bamboo 10.
In the embodiment of the present application, the intermediate connecting member 20 may be provided with the second groove 21 and the third groove 22 at the same time, so that the problem of reverse installation of the intermediate connecting member 20 can be avoided.
In the embodiment of the application, a fourth groove 31 is further formed in one side, close to the heat-insulating cover 40, of the second heat-insulating cylinder 30, and the fourth groove 31 is arranged close to the center of the second heat-insulating cylinder 30 and extends along the circumferential direction of the second heat-insulating cylinder 30; the heat preservation cover 40 is embedded in the fourth groove 31. In practical application, the fourth groove 31 is formed in the second heat-insulating cylinder 30, so that the heat-insulating cover 40 can be mounted more simply and conveniently.
In practical applications, for example, the 26-inch thermal field is taken as an example, the outer diameter of the first thermal insulation cylinder 10 may be equal to the outer diameter T7 of the intermediate connector 20, and specifically, the outer diameter or T7 of the first thermal insulation cylinder 10 may be any value from 820mm to 850 mm. Alternatively, the outer diameter of the first heat-preserving container 10 may be 820mm, 830mm, 834mm, 840mm, 850mm, etc. The wall thickness of the first heat-retaining tube 10 is set to any value within the range of 10mm to 15mm, for example, 10mm, 12mm, 15mm, or the like. It is understood that the inner diameter of the first heat-preserving cylinder 10 can also be obtained by the difference between the outer diameter of the first heat-preserving cylinder 10 and the wall thickness of the first heat-preserving cylinder 10. In practical application, the inner diameter of the first heat-preserving container 10 is greater than or equal to the dimension T6 of the third groove 22 on the middle connecting member 20, so that the first heat-preserving container 10 is more simply and conveniently embedded in the third groove 22. In the 26-inch thermal field, the inner diameter T8 of the second heat-preserving container 30 is equal to the inner diameter T5 of the intermediate connector 20, i.e., T8 is T5. In practical applications, T8(T5) may be any value in the range of 750mm to 800mm, for example, 750mm, 780mm, 790mm, 800mm, etc. The outer diameter T10 of the second heat-preserving cylinder 30 can be smaller than the dimension T4 of the second groove 21 on the intermediate connecting piece 20, i.e. T10 is less than or equal to T4, so that one end of the second heat-preserving cylinder 30 can be better embedded in the second groove 21. The dimension T9 of the fourth groove 31 on the second heat-preserving container 30 can be greater than or equal to the outer diameter dimension T2 of the heat-preserving cover 40, i.e. T9 is greater than or equal to T2, so that the heat-preserving cover 40 can be better embedded in the fourth groove 31. It is understood that the depth H3 of the fourth groove 31 may be equal to the thickness H1 of the thermal cover 40, i.e., H3 — H1, so that the end surface of the second thermal barrel 30 is flush with the outer surface of the thermal cover 40. In the embodiment of the present application, the height H2 of the second heat-preserving container 30 is not particularly limited, and can be set by a person skilled in the art according to actual situations. In the 26-inch thermal field, the thickness H1 of the thermal cover 40 may have any value within the range of 10mm to 25 mm. The size of the outer diameter T2 of the heat preservation cover can be any value within the range of 750 mm-800 mm. The inner diameter T1 of the heat preservation cover can be any value within the range of 560 mm-600 mm. The ratio of the depth of the first groove 41 on the thermal insulation cover 40 to the thickness H1 of the thermal insulation cover 40 is 1:5 to 1:2, so the depth of the first groove 41 can be any value within the range of 2mm to 12.5mm, and those skilled in the art can select the setting according to actual situations, which is not specifically limited in the embodiment of the present application.
It is understood that the embodiment of the present application only uses a 26-inch thermal field as an example to illustrate specific dimensions and size ratios of the first insulating cylinder 10, the intermediate connecting member 20, the second insulating cylinder 30 and the insulating cover 40, and should not be construed as a limitation thereof, and the thermal field device with the above size ratios can also be applied to other thermal fields.
In the embodiment of the application, the inner diameters of the intermediate connector 20 and the second heat-preserving cylinder 30 are increased, that is, the volume of the pulling channel 11 is increased, so that the gas circulation in the pulling channel 11 is smoother, the retention time of the gas in the pulling channel is reduced, more oxygen-containing waste gas generated in the crystal pulling process can be discharged in time, and further the oxygen content in the silicon rod is reduced.
Of course, it can be understood that a person skilled in the art may also set the specific size of the thermal field device in different thermal fields according to the actual situation, and other references may be performed, which is not described herein again in this embodiment of the present application.
In this embodiment, the thermal field apparatus may further include: the furnace tube 50 is sleeved outside the first heat-preserving tube 10, the intermediate piece and the second heat-preserving tube 30, and the furnace tube 50 and the first heat-preserving tube 10, the intermediate piece and the second heat-preserving tube 30 are arranged in a preset clearance mode. In practical applications, the furnace tube 50 is used to form an integral structure of the thermal field, and is isolated from the external environment to prevent heat loss from the thermal field.
In the embodiment of the application, the preset ratio of the inner diameter size of the first heat-preserving cylinder 10 to the inner diameter size of the second heat-preserving cylinder 30 is optimized, so that the gas flow direction of a thermal field in a single crystal furnace is changed, the oxygen content of a crystal bar is effectively reduced, a silicon rod with the oxygen content of less than 14ppma is improved by 25-30%, the oxygen content of the silicon rod is reduced by about 0.8-1.0 ppma, and the recovery of unqualified products caused by high oxygen content is reduced by 1.0-1.5%.
In the embodiment of the application, by optimizing the inner diameter of the first heat-preserving cylinder 10, the inner diameter of the second heat-preserving cylinder 30 and the inner and outer diameters of the intermediate connecting member 20, the volume of the pulling channel 11 formed by the first heat-preserving cylinder 10, the intermediate connecting member 20 and the second heat-preserving cylinder 30 can be effectively increased, and the first groove 41 is arranged on the heat-preserving cover 40, so that the volume of the pulling channel 11 is further increased, namely, the pulling space above the liquid level of the crucible is increased, the temperature of the position of the pulling channel 11 above the liquid level can be reduced, the temperature gradient of a single crystal pulling region is reduced, the stability of crystal pulling is more facilitated, the broken edge rate of a silicon rod is reduced, and the crystal pulling cost is reduced. In the embodiment of the application, the edge breakage rate can be reduced by 5% -10%.
In summary, the thermal field device according to the embodiment of the present application at least includes the following advantages:
in the embodiment of the application, the first heat-preserving cylinder, the second heat-preserving cylinder and the intermediate connecting piece are coaxially arranged and enclose to form a pulling channel for stretching the silicon rod, and the inner diameter of the first heat-preserving cylinder and the inner diameter of the second heat-preserving cylinder are arranged in a preset proportion, so that the proportion between the inner diameters of the first heat-preserving cylinder and the second heat-preserving cylinder can be optimized, the flow direction of air flow in the pulling channel can be adjusted, the generation of cyclone in the pulling channel is avoided, the retention time of gas in a thermal field is shortened, more oxygen-containing waste gas generated in the crystal pulling process can be timely discharged, the oxygen content of the silicon rod is reduced, and the quality of monocrystalline silicon is improved.
The embodiment of the application also provides a single crystal furnace, and the single crystal furnace can specifically comprise the thermal field device.
In practical application, because the inner diameter sizes of the first heat-preserving cylinder and the second heat-preserving cylinder in the thermal field device are set in a preset proportion, the airflow direction in the pulling channel can be adjusted by optimizing the proportion between the inner diameter sizes of the first heat-preserving cylinder and the second heat-preserving cylinder, the space of the thermal field is increased, the generation of cyclone in the pulling channel is reduced, the retention time of gas in the thermal field is shortened, more oxygen-containing waste gas generated in the crystal pulling process can be discharged in time, the oxygen content of the silicon rod is reduced, and the quality of the monocrystalline silicon is improved.
While the present embodiments have been described with reference to the accompanying drawings, it is to be understood that the invention is not limited to the precise embodiments described above, which are meant to be illustrative and not restrictive, and that various changes may be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A thermal field device, comprising: the heat insulation device comprises a first heat insulation cylinder, an intermediate connecting piece and a second heat insulation cylinder;
one end of the first heat-preserving cylinder is connected with one end of the second heat-preserving cylinder through the intermediate connecting piece, and the first heat-preserving cylinder, the second heat-preserving cylinder and the intermediate connecting piece are coaxially arranged and enclose to form a lifting channel for drawing a silicon rod;
the inner diameter of the first heat-insulating cylinder and the inner diameter of the second heat-insulating cylinder are arranged in a preset proportion.
2. The thermal field apparatus of claim 1, wherein the predetermined ratio between the inner diameter dimension of the first thermal insulation cylinder and the inner diameter dimension of the second thermal insulation cylinder is 10:9.7 to 10: 8.5.
3. The thermal field apparatus of claim 1, wherein an inner diameter dimension of the intermediate connection is the same as an inner diameter dimension of the second thermal cylinder;
and/or the outer diameter of the intermediate connecting piece is the same as that of the first heat-preserving cylinder.
4. The thermal field apparatus of claim 1, wherein the first thermal insulating cylinder has an inner diameter dimension that is 3% to 18% greater than an inner diameter dimension of the second thermal insulating cylinder, and the first thermal insulating cylinder is disposed below the second thermal insulating cylinder.
5. The thermal field device of claim 1, further comprising: a heat preservation cover;
the heat-insulating cover is provided with a lifting through hole, at least part of the heat-insulating cover covers the other end of the second heat-insulating cylinder, and the lifting through hole is opposite to the lifting channel.
6. The thermal field apparatus of claim 5, wherein a side of the thermal cover adjacent to the second thermal cylinder is provided with a first groove, and the first groove is disposed adjacent to a center of the thermal cover and extends along a circumferential direction of the thermal cover.
7. The thermal field apparatus of claim 6, wherein a ratio of a depth of the first groove to a thickness of the thermal cover in a direction from the second thermal cylinder to the thermal cover is 1:5 to 1: 2.
8. The thermal field apparatus of claim 1, wherein the end surface of the intermediate connector adjacent to the second thermal insulation cylinder is provided with a second groove, the second groove is adjacent to the center of the intermediate connector and extends along the circumference of the intermediate connector;
one end of the second heat-preserving cylinder is arranged in the second groove.
9. The thermal field apparatus of claim 1, wherein an end surface of the intermediate connection member adjacent to the first thermal insulation barrel is provided with a third groove extending along a circumferential edge of the intermediate connection member;
one end of the first heat-preserving cylinder is arranged in the third groove.
10. A single crystal furnace, comprising: a thermal field apparatus as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120853187.5U CN216039929U (en) | 2021-04-23 | 2021-04-23 | Thermal field device and single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120853187.5U CN216039929U (en) | 2021-04-23 | 2021-04-23 | Thermal field device and single crystal furnace |
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| Publication Number | Publication Date |
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| CN216039929U true CN216039929U (en) | 2022-03-15 |
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| CN202120853187.5U Active CN216039929U (en) | 2021-04-23 | 2021-04-23 | Thermal field device and single crystal furnace |
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2021
- 2021-04-23 CN CN202120853187.5U patent/CN216039929U/en active Active
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