CN215418217U - Wafer heat radiation structure - Google Patents
Wafer heat radiation structure Download PDFInfo
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- CN215418217U CN215418217U CN202121659854.2U CN202121659854U CN215418217U CN 215418217 U CN215418217 U CN 215418217U CN 202121659854 U CN202121659854 U CN 202121659854U CN 215418217 U CN215418217 U CN 215418217U
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- silica gel
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Abstract
The utility model discloses a chip heat dissipation structure, and relates to the technical field of light emitting components. The wafer comprises a wafer body, a high-temperature-resistant silica gel sleeve, a heat-conducting silica gel sheet, a copper pasting plate, heat-radiating fins and a fixing clamp, wherein the heat-conducting silica gel sheet is located in the high-temperature-resistant silica gel sleeve, one surface of the heat-conducting silica gel sheet is pasted on the wafer body, the other surface of the heat-conducting silica gel sheet is pasted on the copper pasting plate, and a concave wave valley structure is arranged on one surface of the heat-conducting silica gel sheet, which is pasted on the copper pasting plate. This wafer heat radiation structure utilizes heat conduction silica gel piece as the hot-medium to laminate wafer body and copper flitch, and it has good electrical insulation, compressibility, ageing-resistant etc., and because be equipped with concave wave valley structure and convex wave valley structure on heat conduction silica gel piece and the copper flitch respectively, the area of multiplicable heat of integration and heat exchange surface through both structures makes the heat conduction thermal resistance reduce, the heat conduction efficiency that corresponds obtains promoting by a wide margin to make its radiating effect better.
Description
Technical Field
The utility model relates to the technical field of light-emitting components, in particular to a wafer heat dissipation structure.
Background
The wafer is one of the main raw materials of the LED, is the light-emitting part and the core part of the LED, the quality of the wafer directly determines the performance of the LED, the wafer is composed of III and V group compound semiconductor substances, and when the LED is packaged, the wafer materials are arranged on the wafer film in order.
The conventional high-power light-emitting chip has very large heat productivity, and when the high-power light-emitting chip is used, the conventional method is to contact the pole pins of the light-emitting chip with a heat sink to dissipate heat, but the heat dissipation effect is very limited, in order to improve the overheating condition of the chip, a heat sink is additionally arranged outside the chip to reduce the temperature of the chip, and the additional heat sink causes the overall volume to be huge, so that the high-power light-emitting chip cannot be applied to electronic devices which are light and thin.
SUMMERY OF THE UTILITY MODEL
The utility model provides a chip heat dissipation structure, which has the advantages of improving heat transfer efficiency and ensuring better heat dissipation effect, so as to solve the problem that the heat dissipation effect is limited when the pole pins of a light-emitting chip are contacted with a heat dissipation sheet for heat dissipation.
In order to realize the purposes of improving the heat transfer efficiency and ensuring the better heat dissipation effect, the utility model provides the following technical scheme: the utility model provides a wafer heat radiation structure, includes wafer body, high temperature resistant silica gel cover, heat conduction silica gel piece, copper flitch, heat radiation fins and fixation clamp, the heat conduction silica gel piece is located high temperature resistant silica gel cover, the one side of heat conduction silica gel piece is laminated on the wafer body, and another side laminating on the copper flitch, the one side of heat conduction silica gel piece and the laminating of copper flitch is equipped with the concave wave valley structure, the one side of copper flitch and the laminating of heat conduction silica gel piece is equipped with convex wave valley structure, another side laminating of copper flitch is on heat radiation fins, the fixation clamp is installed on the copper flitch to with wafer body suit.
As a preferred technical scheme of the utility model, two surfaces of the high-temperature-resistant silica gel sleeve are respectively bonded with the wafer body and the copper pasting plate in a bonding mode, and the high-temperature-resistant silica gel sleeve is of a hollow structure.
As a preferred technical solution of the present invention, the copper plate is bonded to the wafer body by using a heat conductive silicone sheet as a thermal interface, and the heat conductive silicone sheet is in a soft solid form.
As a preferred technical solution of the present invention, the copper attachment plate is soldered to the heat dissipation fins by soldering, and the heat dissipation fins are made of copper.
As a preferable technical scheme of the utility model, the cross section of the fixing clamp is U-shaped, and the upper part of the fixing clamp is of a hollow structure.
In a preferred embodiment of the present invention, the fixing clip is located at a lower portion of the wafer body, and the lower portion of the fixing clip is fixed to the copper plate by a screw.
Compared with the prior art, the utility model provides a wafer heat dissipation structure, which has the following beneficial effects:
this wafer heat radiation structure utilizes heat conduction silica gel piece as the hot-medium to laminate wafer body and copper flitch, and it has good electrical insulation, compressibility, ageing-resistant etc., and because be equipped with concave wave valley structure and convex wave valley structure on heat conduction silica gel piece and the copper flitch respectively, the area of multiplicable heat of integration and heat exchange surface through both structures makes the heat conduction thermal resistance reduce, the heat conduction efficiency that corresponds obtains promoting by a wide margin to make its radiating effect better.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a top view of the present invention;
fig. 3 is a partially enlarged view of the present invention.
In the figure: 1. a wafer body; 2. a high temperature resistant silica gel sleeve; 3. a heat-conducting silica gel sheet; 4. copper pasting plates; 5. heat dissipation fins; 6. a fixing clip; 7. a valley structure; 8. a convex wave valley structure.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-3, the present invention discloses a wafer heat dissipation structure, which includes a wafer body 1, a high temperature resistant silicone sleeve 2, a heat conductive silicone sheet 3, a copper plate 4, heat dissipation fins 5 and a fixing clip 6, wherein the heat conductive silicone sheet 3 is located in the high temperature resistant silicone sleeve 2, one surface of the heat conductive silicone sheet 3 is attached to the wafer body 1, the other surface of the heat conductive silicone sheet 3 is attached to the copper plate 4, one surface of the heat conductive silicone sheet 3 attached to the copper plate 4 is provided with a concave-concave structure 7, one surface of the copper plate 4 attached to the heat conductive silicone sheet 3 is provided with a convex-concave structure 8, the other surface of the copper plate 4 is attached to the heat dissipation fins 5, the fixing clip 6 is mounted on the copper plate 4 and is sleeved with the wafer body 1, and the wafer body 1 and the copper plate 4 are attached by using the heat conductive silicone sheet 3 as a heat medium, and have good electrical insulation property, Compressibility, ageing-resistant etc. and because be equipped with concave wave valley structure 7 and convex wave valley structure 8 on heat conduction silica gel piece 3 and the copper flitch 4 respectively, the area of multiplicable heat of integration through both structures and heat exchange surface makes heat conduction thermal resistance reduce, and the corresponding heat conduction efficiency obtains promoting by a wide margin to it is better to make its radiating effect.
Specifically, two surfaces of the high temperature resistant silicone sleeve 2 are respectively bonded with the wafer body 1 and the copper pasting plate 4 in a bonding mode, and the high temperature resistant silicone sleeve 2 is of a hollow structure.
In this embodiment, the high temperature resistant silicone sleeve 2 can avoid material loss of the heat-conducting silicone sheet 3 in the compression process.
Specifically, the copper pasting plate 4 is pasted with the wafer body 1 by taking the heat-conducting silica gel sheet 3 as a thermal interface, and the heat-conducting silica gel sheet 3 is in a soft solid state.
In the embodiment, the soft heat-conducting silica gel sheet 3 is good in insulativity, the electrical insulation index of 1MM thickness is more than 4000V, the two surfaces of the sheet are slightly sticky, and the operability is strong.
Specifically, the copper attachment plate 4 is welded on the heat dissipation fins 5 in a soldering manner, and the heat dissipation fins 5 are made of copper.
In this embodiment, the heat sink fins 5 absorb heat conducted from the wafer body 1 and dissipate the heat in the form of convection.
Specifically, the cross section of the fixing clip 6 is U-shaped, and the upper part of the fixing clip 6 is of a hollow structure.
In the present embodiment, the fixing clip 6 is used for positioning and fixing the assembly of the wafer body 1 and the heat dissipation portion.
Specifically, the fixing clip 6 is located at the lower part of the wafer body 1, and the lower part of the fixing clip 6 is locked on the copper pasting board 4 through a screw.
In this embodiment, the wafer body 1 can be firmly fixed on the copper pasting board 4 by the action of the fixing clip 6, thereby ensuring the connectivity of the two.
The working principle and the using process of the utility model are as follows: when using, utilize heat conduction silica gel piece 3 to laminate wafer body 1 and copper flitch 4 as hot medium, it has good electrical insulation, compressibility, ageing-resistant etc., and because be equipped with concave wave valley structure 7 and convex wave valley structure 8 on heat conduction silica gel piece 3 and the copper flitch 4 respectively, the area of multiplicable heat and the heat exchange surface of fusion through both structures makes the heat conduction thermal resistance reduce, corresponding heat conduction efficiency is promoted by a wide margin, thereby it is better to make its radiating effect.
In conclusion, this wafer heat radiation structure utilizes heat conduction silica gel piece 3 to laminate wafer body 1 and copper flitch 4 as the hot-medium, and it has good electrical insulation, compressibility, ageing-resistant etc., and because be equipped with concave wave valley structure 7 and convex wave valley structure 8 on heat conduction silica gel piece 3 and the copper flitch 4 respectively, can increase the area of heat and heat exchange surface through the integration of both structures, makes heat conduction thermal resistance reduce, and corresponding heat transfer efficiency obtains promoting by a wide margin to it is better to make its radiating effect.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. The utility model provides a wafer heat radiation structure, includes wafer body (1), high temperature resistant silica gel cover (2), heat conduction silica gel piece (3), copper flitch (4), heat radiation fins (5) and fixation clamp (6), its characterized in that: heat conduction silica gel piece (3) are arranged in high temperature resistant silica gel cover (2), the one side of heat conduction silica gel piece (3) is laminated on wafer body (1), and another side is laminated on copper flitch (4), the one side of heat conduction silica gel piece (3) and the laminating of copper flitch (4) is equipped with concave trough structure (7), the one side of copper flitch (4) and the laminating of heat conduction silica gel piece (3) is equipped with protruding ripples valley structure (8), another side laminating of copper flitch (4) is on heat radiation fins (5), fixation clamp (6) are installed on copper flitch (4) to with wafer body (1) suit.
2. A wafer heat dissipation structure as recited in claim 1, wherein: two surfaces of the high-temperature-resistant silica gel sleeve (2) are respectively bonded with the wafer body (1) and the copper pasting plate (4) in a bonding mode, and the high-temperature-resistant silica gel sleeve (2) is of a hollow structure.
3. A wafer heat dissipation structure as recited in claim 1, wherein: the copper pasting plate (4) is pasted with the wafer body (1) through a heat-conducting silica gel sheet (3) as a thermal interface, and the heat-conducting silica gel sheet (3) is in a soft solid state.
4. A wafer heat dissipation structure as recited in claim 1, wherein: the copper flitch (4) is welded on the heat dissipation fins (5) in a tin soldering mode, and the heat dissipation fins (5) are made of copper materials.
5. A wafer heat dissipation structure as recited in claim 1, wherein: the cross section of the fixing clamp (6) is U-shaped, and the upper part of the fixing clamp (6) is of a hollow structure.
6. A wafer heat dissipation structure as recited in claim 1, wherein: the fixing clamp (6) is positioned at the lower part of the wafer body (1), and the lower part of the fixing clamp (6) is locked on the copper pasting plate (4) through a screw.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121659854.2U CN215418217U (en) | 2021-07-20 | 2021-07-20 | Wafer heat radiation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121659854.2U CN215418217U (en) | 2021-07-20 | 2021-07-20 | Wafer heat radiation structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215418217U true CN215418217U (en) | 2022-01-04 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121659854.2U Active CN215418217U (en) | 2021-07-20 | 2021-07-20 | Wafer heat radiation structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215418217U (en) |
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2021
- 2021-07-20 CN CN202121659854.2U patent/CN215418217U/en active Active
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