CN215120553U - Driving circuit for IGBT - Google Patents
Driving circuit for IGBT Download PDFInfo
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- CN215120553U CN215120553U CN202022387167.1U CN202022387167U CN215120553U CN 215120553 U CN215120553 U CN 215120553U CN 202022387167 U CN202022387167 U CN 202022387167U CN 215120553 U CN215120553 U CN 215120553U
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Abstract
The utility model relates to a converter technical field discloses a stable and higher drive circuit for IGBT of security of output grid voltage possesses: the microcontroller is configured in the driving circuit and used for outputting the PWM pulse signal; the input end of the photoelectric coupler is coupled with the signal output end of the microcontroller and used for receiving the PWM pulse signal and isolating the PWM pulse signal; the input end of the push-pull circuit is connected with the output end of the photoelectric coupler and is used for receiving the PWM pulse signal isolated by the photoelectric coupler; the output end of the push-pull circuit is connected with the grid of the IGBT, and the PWM pulse signal is used for controlling the on-off of the IGBT.
Description
Technical Field
The utility model relates to a converter technical field, more specifically say, relate to a drive circuit for IGBT.
Background
The drive circuit is used for amplifying the power of the pulse output by the singlechip and providing proper forward and reverse grid voltage to ensure that the IGBT is reliably switched on and off. At present, when the positive bias voltage is increased, the on-state voltage drop and the turn-on loss of the IGBT are both reduced, and in the process, the load is easy to break down the IGBT or burn out a driving circuit due to the fact that the grid voltage UGE is overlarge.
Therefore, how to provide a proper gate voltage is a technical problem that needs to be solved by those skilled in the art.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model lies in, to prior art's above-mentioned when the positive bias voltage increase, IGBT on-state pressure drop all descends with the turn-on loss, because grid voltage UGE is too big, causes the load short circuit easily and punctures IGBT or burns out drive circuit's defect, provides a drive circuit for IGBT that output grid voltage is stable and the security is higher.
The utility model provides a technical scheme that its technical problem adopted is: a drive circuit for an IGBT is constructed, and is provided with:
the microcontroller is configured in the driving circuit and used for outputting the PWM pulse signal;
the input end of the photoelectric coupler is coupled with the signal output end of the microcontroller and used for receiving the PWM pulse signal and isolating the PWM pulse signal;
the input end of the push-pull circuit is connected with the output end of the photoelectric coupler and is used for receiving the PWM pulse signal isolated by the photoelectric coupler;
the output end of the push-pull circuit is connected with the grid electrode of the IGBT, and the PWM pulse signal is used for controlling the on-off of the IGBT.
In some embodiments, the push-pull circuit comprises at least one transistor or at least one MOS transistor,
the transistor comprises a first triode and a second triode,
the bases of the first triode and the second triode are respectively connected with the output end of the photoelectric coupler,
emitting electrodes of the first triode and the second triode are respectively connected with a grid electrode of the IGBT;
the MOS tube comprises a first MOS tube and a second MOS tube,
the grids of the first MOS tube and the second MOS tube are respectively connected with the output end of the photoelectric coupler,
and the source electrode of the first MOS tube and the drain electrode of the second MOS tube are respectively connected with the grid electrode of the IGBT.
In some embodiments, the first transistor is an NPN transistor, the second transistor is a PNP transistor,
the first MOS tube is an N-channel MOS tube, and the second MOS tube is a P-channel MOS tube.
In some embodiments, the transistor further comprises a third triode, wherein a collector of the third triode is connected with bases of the first triode and the second triode, or
And the collector electrode of the third triode is connected with the grid electrodes of the first MOS tube and the second MOS tube.
In some embodiments, further comprising a first and a second regulator tube connected in series,
the anode of the first voltage-regulator tube is connected with the grid of the IGBT;
and the anode of the second voltage-regulator tube is connected with the emitter of the IGBT.
In some embodiments, the circuit further comprises a second resistor, a third resistor and a fourth resistor,
one end of the second resistor and one end of the third resistor are respectively connected with the output end of the photoelectric coupler;
the other end of the third resistor is coupled to the gate of the third transistor,
the other end of the second resistor is connected with one end of the fourth resistor,
the other end of the fourth resistor is respectively connected with the collector of the third triode and the base electrodes of the first triode and the second triode.
The utility model discloses an among the drive circuit for IGBT, including the microcontroller that is used for exporting PWM pulse signal, photoelectric coupler and the push-pull circuit that are used for keeping apart PWM pulse signal; the input end of the push-pull circuit is connected with the output end of the photoelectric coupler and used for receiving the PWM pulse signal isolated by the photoelectric coupler; the output end of the push-pull circuit is connected with the grid of the IGBT, and the PWM pulse signal is used for controlling the on-off of the IGBT. Compared with the prior art, the problem that when the on-state voltage drop and the turn-on loss of the IGBT are reduced, the grid voltage UGE is too large, the load is easy to be shorted, the IGBT is broken down, or the driving circuit is burnt down can be solved by arranging the microcontroller for outputting the PWM pulse signal and the push-pull circuit capable of being conducted alternately.
Drawings
The invention will be further explained with reference to the drawings and examples, wherein:
fig. 1 is a driving circuit diagram of an embodiment of the driving circuit for the IGBT of the present invention;
fig. 2 is a push-pull circuit diagram of an embodiment of the driving circuit for IGBT of the present invention.
Detailed Description
In order to clearly understand the technical features, objects, and effects of the present invention, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
As shown in fig. 1, in the first embodiment of the driving circuit for IGBT of the present invention, the driving circuit 100 for IGBT includes a microcontroller MCU, a photocoupler VLC, a push-pull circuit 101 and an IGBT.
The microcontroller MCU is configured in the drive circuit and used for outputting the PWM pulse signal.
The VLC uses light as a medium to transmit electric signals, and has good isolation effect on input and output electric signals.
Specifically, an input end (corresponding to pin 1) of the VLC of the photocoupler is connected with a signal output end of the MCU through the first resistor R101, and is configured to receive the PWM pulse signal, isolate the PWM pulse signal, and output the PWM pulse signal to the push-pull circuit 101.
The push-pull circuit 101 adopts two transistors or MOS tubes with the same parameters, the transistors or MOS tubes exist in the circuit in a push-pull mode, each transistor is responsible for positive and negative half-cycle waveform amplification tasks, and when the circuit works, only one of the two symmetrical power switch tubes is conducted each time, so that the conduction loss is small, and the efficiency is high.
Specifically, the input terminal of the push-pull circuit 101 is connected to the output terminal (corresponding to 3 pins) of the photocoupler VLC, and is configured to receive the PWM pulse signal isolated by the photocoupler VLC, and the push-pull circuit 101 is alternately turned on by the PWM pulse signal.
The output end of the push-pull circuit 101 is connected with the gate of the IGBT, and the PWM pulse signal is used to control the on or off of the IGBT.
Specifically, when the microcontroller MCU inputs a control signal (PWM pulse signal), the photocoupler VLC is triggered to conduct, a transistor (corresponding to the first transistor VT101) or MOS (corresponding to the first MOS transistor VT101) in the push-pull circuit 101 is conducted, a +15V driving voltage is output, and the IGBT is triggered to conduct.
When the control signal (PWM pulse signal) input by the microcontroller MCU is zero, the photocoupler VLC is turned off, and the other transistor (corresponding to the second transistor VT102) or MOS (corresponding to the second MOS transistor VT102) in the push-pull circuit 101 is turned on, outputting a voltage of-10V, and controlling the IGBT to be turned off.
When the forward voltage driving voltage is increased, the on-resistance of the IGBT is reduced, so that the turn-on loss is reduced; if the forward driving voltage is too large, it is responsible for the short-circuit current I during short-circuitCFollowing VCEThe increase of the voltage is possible to cause the latching effect of the IGBT, so that the gating failure is caused, and the damage of the IGBT is caused; if the forward driving voltage is too small, the IGBT is out of saturation, so that a conducting region enters a linear amplification region, and the IGBT is damaged due to overheating; v is selected from the range of +10V to less than or equal to VCE≤+15V。
The negative bias voltage of the grid can prevent the IGBT from being conducted by mistake due to overlarge surge current when the IGBT is turned off, so the negative bias voltage is preferably-10V.
In order to reliably turn off the IGBT and prevent the locking effect, a negative bias voltage is applied to the grid electrode, so that a double power supply is adopted to supply power for the driving circuit.
By using the technical scheme, the microcontroller MCU outputs the PWM pulse signal to control the push-pull circuit 101 to be alternately switched on, so that the problem that when the on-state voltage drop and the turn-on loss of the IGBT are reduced, the grid voltage UGE is too large, the load is easy to be shorted, the IGBT is broken down or the driving circuit is burnt out can be avoided.
In some embodiments, in order to improve the timeliness of the on/off switching of the IGBT, at least one transistor or at least one MOS transistor may be disposed in the push-pull circuit 101, wherein the transistor includes a first transistor VT101 and a second transistor VT102, and the MOS transistor includes the first transistor VT101 and the second transistor VT 102.
Specifically, the bases of the first transistor VT101 and the second transistor VT102 are respectively connected to the output end (corresponding to 3 pins) of the photocoupler VLC, and the emitters of the first transistor VT101 and the second transistor VT102 are respectively connected to the gate of the IGBT.
As shown in fig. 2, the gates of the first MOS transistor VT101 and the second MOS transistor VT102 are respectively connected to the output end (corresponding to 3 pins) of the photocoupler VLC, and the source of the first MOS transistor VT101 and the drain of the second MOS transistor VT102 are respectively connected to the gate of the IGBT.
It should be noted that the first transistor VT101 is an NPN transistor, the second transistor VT102 is a PNP transistor, the first MOS transistor VT101 is an N-channel MOS transistor, and the second MOS transistor VT102 is a P-channel MOS transistor. The triode and the MOS tube have the function of a switch.
Specifically, when the control signal (PWM pulse signal) is at a high level, the first transistor VT101 or the first MOS transistor VT101 is turned on, the second transistor VT102 or the second MOS transistor VT102 is turned off, and the PWM pulse signal is output to control the IGBT to be turned on;
when the control signal (PWM pulse signal) is at a low level, the first transistor VT101 or the first MOS transistor VT101 is turned on and off, the second transistor VT102 or the second MOS transistor VT102 is turned on and off, and the IGBT is turned off.
In some embodiments, in order to improve the switching performance of the driving circuit, a third transistor VT103 may be disposed in the driving circuit, wherein the third transistor VT103 is an NPN transistor, which has a switching function.
Specifically, the collector of the third transistor VT103 is connected to the bases of the first transistor VT101 and the second transistor VT102, or
The collector of the third transistor VT103 is connected to the gates of the first MOS transistor VT101 and the second MOS transistor VT 102.
Specifically, when the third transistor VT103 is turned off, the first transistor VT101 or the first MOS transistor VT101 is turned on, and accordingly outputs a PWM pulse signal.
In some embodiments, in order to improve the safety of the IGBT operation, a first voltage regulator VS101 and a second voltage regulator VS102 connected in series may be provided in the driving circuit, wherein a cathode of the first voltage regulator VS101 is connected to a cathode of the second voltage regulator VS 102.
The anode of the first voltage regulator tube VS101 is connected with the gate of the IGBT, and the anode of the second voltage regulator tube VS102 is connected with the emitter of the IGBT.
Specifically, since the gate withstand voltage of the IGBT is generally about ± 18, a gate overvoltage protection circuit is provided at the output terminal of the drive circuit.
In some embodiments, the device further includes a second resistor R102, a third resistor R103, and a fourth resistor R104, wherein one end of the second resistor R102 and one end of the third resistor R103 are respectively connected to the output end of the photocoupler VLC, the other end of the third resistor R103 is coupled to the gate of the third transistor VT103, and the other end of the second resistor R102 is connected to one end of the fourth resistor R104.
The other end of the fourth resistor R104 is connected to the collector of the third transistor VT103, and the bases of the first transistor VT101 and the second transistor VT102, respectively.
After the VLC is isolated, one path of an output control signal of the photoelectric coupler is input into the first triode VT101 and the second triode VT102 through the second resistor R102; the other path is input to the third transistor VT103 through the third resistor R103.
While the embodiments of the present invention have been described with reference to the accompanying drawings, the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many modifications may be made by one skilled in the art without departing from the spirit and scope of the present invention as defined in the appended claims.
Claims (3)
1. A drive circuit for an IGBT is characterized by comprising:
the microcontroller is configured in the driving circuit and used for outputting the PWM pulse signal;
the input end of the photoelectric coupler is coupled with the signal output end of the microcontroller and used for receiving the PWM pulse signal and isolating the PWM pulse signal;
the input end of the push-pull circuit is connected with the output end of the photoelectric coupler and is used for receiving the PWM pulse signal isolated by the photoelectric coupler;
the output end of the push-pull circuit is connected with the grid of the IGBT, and the PWM pulse signal is used for controlling the on-off of the IGBT;
the push-pull circuit comprises at least one transistor or at least one MOS tube,
the transistor comprises a first triode and a second triode,
the bases of the first triode and the second triode are respectively connected with the output end of the photoelectric coupler,
emitting electrodes of the first triode and the second triode are respectively connected with a grid electrode of the IGBT;
the MOS tube comprises a first MOS tube and a second MOS tube,
the grids of the first MOS tube and the second MOS tube are respectively connected with the output end of the photoelectric coupler,
the source electrode of the first MOS tube and the drain electrode of the second MOS tube are respectively connected with the grid electrode of the IGBT;
the first triode is an NPN type triode, the second triode is a PNP type triode,
the first MOS tube is an N-channel MOS tube, and the second MOS tube is a P-channel MOS tube;
the collector of the third triode is connected with the base electrodes of the first triode and the second triode, or
And the collector electrode of the third triode is connected with the grid electrodes of the first MOS tube and the second MOS tube.
2. The drive circuit for an IGBT according to claim 1,
also comprises a first voltage-stabilizing tube and a second voltage-stabilizing tube which are connected in series,
the anode of the first voltage-regulator tube is connected with the grid of the IGBT;
and the anode of the second voltage-regulator tube is connected with the emitter of the IGBT.
3. The drive circuit for an IGBT according to claim 2,
also comprises a second resistor, a third resistor and a fourth resistor,
one end of the second resistor and one end of the third resistor are respectively connected with the output end of the photoelectric coupler;
the other end of the third resistor is coupled to the gate of the third transistor,
the other end of the second resistor is connected with one end of the fourth resistor,
the other end of the fourth resistor is respectively connected with the collector of the third triode and the base electrodes of the first triode and the second triode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022387167.1U CN215120553U (en) | 2020-10-23 | 2020-10-23 | Driving circuit for IGBT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022387167.1U CN215120553U (en) | 2020-10-23 | 2020-10-23 | Driving circuit for IGBT |
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| Publication Number | Publication Date |
|---|---|
| CN215120553U true CN215120553U (en) | 2021-12-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022387167.1U Active CN215120553U (en) | 2020-10-23 | 2020-10-23 | Driving circuit for IGBT |
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| CN (1) | CN215120553U (en) |
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- 2020-10-23 CN CN202022387167.1U patent/CN215120553U/en active Active
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