CN216086139U - Overcurrent protection circuit of frequency converter - Google Patents
Overcurrent protection circuit of frequency converter Download PDFInfo
- Publication number
- CN216086139U CN216086139U CN202121890866.6U CN202121890866U CN216086139U CN 216086139 U CN216086139 U CN 216086139U CN 202121890866 U CN202121890866 U CN 202121890866U CN 216086139 U CN216086139 U CN 216086139U
- Authority
- CN
- China
- Prior art keywords
- circuit
- triode
- resistor
- signal
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Power Conversion In General (AREA)
Abstract
The utility model relates to the technical field of frequency converters, and discloses an overcurrent protection circuit of a frequency converter, which has higher reliability and higher response speed, and is provided with the following components: the gate circuit is used for receiving the pulse signal; the amplifying circuit is used for amplifying the pulse signal so as to control the working state of the IGBT bridge arm; the detection circuit is used for detecting a current signal of the collector; the signal clamping circuit is used for receiving a current signal, the output end of the signal clamping circuit is connected with the input end of the gate circuit, the signal clamping circuit compares the input current signal with a preset value, and a level signal is output according to a comparison result; when the IGBT bridge arm is short-circuited, the signal clamping circuit outputs a high level, and the high level is used for clamping the potential of the gate circuit, so that the potential of the gate circuit is clamped in a low potential state.
Description
Technical Field
The utility model relates to the technical field of frequency converters, in particular to an overcurrent protection circuit of a frequency converter.
Background
Insulated Gate bipolar transistors (Insulated Gate bipolar 1ar Transistor-IGBT) are the more commonly used switching devices in frequency converters. At present, when a main circuit is short-circuited or overcurrent occurs due to overlarge load in the process of outputting inverter current by a frequency converter, an IGBT is broken down by spike current due to the slow response speed of an overcurrent protection circuit during long-term use.
Therefore, how to increase the response speed of the over-current protection circuit when an abnormal condition occurs is a technical problem that needs to be solved urgently by those skilled in the art.
SUMMERY OF THE UTILITY MODEL
The technical problem to be solved by the present invention is to provide an overcurrent protection circuit for a frequency converter, which has high reliability and high response speed, aiming at the defects that when the main circuit is short-circuited or overcurrent due to an excessive load, the response speed of the overcurrent protection circuit is slow, and the IGBT is broken down by a peak current after a long time use in the prior art.
The technical scheme adopted by the utility model for solving the technical problems is as follows: an overcurrent protection circuit for an inverter is configured, and the overcurrent protection circuit includes:
a gate circuit, which is arranged on the output side of the drive circuit, and is used for receiving the pulse signal;
the input end of the amplifying circuit is connected with the output end of the gate circuit and is used for amplifying the pulse signal so as to control the working state of an IGBT bridge arm;
the input end of the detection circuit is connected with the collector of the IGBT bridge arm and is used for detecting a current signal of the collector;
a signal clamping circuit, which is provided with a preset value,
the input end of the signal clamping circuit is connected with the output end of the detection circuit and is used for receiving the current signal,
the output end of the signal clamping circuit is connected with the input end of the gate circuit,
the signal clamping circuit compares the input current signal with the preset value and outputs a level signal according to a comparison result;
when the IGBT bridge arm is short-circuited, the signal clamping circuit outputs a high level, and the high level is used for clamping the electric potential of the gate circuit, so that the electric potential of the gate circuit is clamped in a low-potential state.
In some embodiments, the signal clamping circuit comprises a comparator and a fifth transistor,
the non-inverting terminal of the comparator is connected with the output terminal of the detection circuit,
the inverting terminal of the comparator is connected with the preset potential terminal,
the base of the fifth triode is coupled with the output end of the comparator,
the emitter of the fifth triode is connected with the common terminal,
the collector of the fifth triode is coupled to the signal input end of the gate circuit.
In some embodiments, the detection circuit includes a first diode, a sixth resistor, a seventh resistor, and a second transistor,
the cathode of the first diode is coupled to the collector of the IGBT leg,
the anode of the first diode is connected with one end of the sixth resistor,
the other end of the sixth resistor is respectively connected with the in-phase end of the comparator, the collector of the second triode, one end of the seventh resistor and the adjusting end,
the other end of the seventh resistor is connected with a power supply end,
and the base electrode of the second triode is connected with the output end of the gate circuit, and the emitting electrode of the second triode is connected with the common end.
In some embodiments, the gate circuit comprises a first resistor and an AND gate,
one end of the first resistor is connected with the output end of the driving circuit,
the other end of the first resistor is respectively connected with the input end of the AND gate and the collector of the fifth triode,
and the output end of the AND gate is connected with the input end of the isolation circuit.
In some embodiments, the isolation circuit includes a second resistor, a photo coupler, and a fourth resistor,
one end of the second resistor is coupled to the output end of the AND gate,
one input end of the photoelectric coupler is connected with the other end of the second resistor,
one end of the fourth resistor is connected with the other input end of the photoelectric coupler,
the other end of the fourth resistor is coupled to one end of the emitter follower,
and the output end of the photoelectric coupler is connected with the other end of the emitter follower.
In some embodiments, the emitter follower comprises a first transistor and a fifth resistor,
the base electrode of the first triode is connected with the other input end of the photoelectric coupler,
the collector of the first triode is respectively connected with one end of the fifth resistor and the input end of the amplifying circuit,
and the other ends of the emitter of the first triode and the fifth resistor are respectively connected with the output end of the photoelectric coupler.
In some embodiments, the amplifying circuit includes a third transistor and a fourth transistor,
the base electrodes of the third triode and the fourth triode are respectively connected with the emitting electrode of the first triode and one end of the fifth resistor,
the collector of the third triode is connected with the positive pole of the power supply, the collector of the fourth triode is connected with the negative pole of the power supply,
and the emitting electrodes of the third triode and the fourth triode are respectively connected with the gate poles of the IGBT bridge arms.
In some embodiments, the third transistor is an NPN transistor and the fourth transistor is a PNP transistor.
In some embodiments, a bidirectional voltage stabilizing circuit is further arranged between the gate and the emitter of the IGBT bridge arm.
The overcurrent protection circuit of the frequency converter comprises a gate circuit, an amplifying circuit, a detection circuit and a signal clamping circuit, wherein the gate circuit is used for receiving a pulse signal; when the IGBT bridge arm is short-circuited, the signal clamping circuit outputs a high level for clamping the electric potential of the gate circuit, so that the electric potential of the gate circuit is clamped in a low-potential state. Compared with the prior art, the overcurrent protection circuit has the advantages that the gate circuit for receiving the pulse signals and the signal clamping circuit for outputting the control level according to the comparison result are arranged, namely when the fed-back collector current signal is larger than the preset value of the signal clamping circuit, the high level output by the signal clamping circuit clamps the potential of the gate circuit in a low-potential state, so that the gate circuit always outputs a low level, and further the trigger pulse of an IGBT bridge arm is closed, and the problem that the IGBT is broken down by the peak current due to the fact that the response speed of the overcurrent protection circuit is low and the IGBT is used for a long time can be effectively solved.
Drawings
The utility model will be further described with reference to the accompanying drawings and examples, in which:
fig. 1 is a schematic circuit diagram of an embodiment of an overcurrent protection circuit of a frequency converter according to the present invention.
Detailed Description
For a more clear understanding of the technical features, objects and effects of the present invention, embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
As shown in fig. 1, in the first embodiment of the overcurrent protection circuit of the frequency converter of the present invention, the overcurrent protection circuit 100 of the frequency converter includes a gate circuit 101, an isolation circuit 102, an emitter follower 103, an amplification circuit 104, a detection circuit 105, and a signal clamp circuit 106.
The gate circuit 101 has a plurality of input ends and an output end; the output is high when all inputs are high (logic 1) at the same time, and low (logic 0) otherwise.
Specifically, the gate circuit 101 is configured to receive a pulse signal (i.e., a PWM pulse signal) output from a previous stage circuit (a driving circuit or a control circuit) and output the pulse signal to the amplifier circuit 104.
The input end of the amplifying circuit 104 is connected to the output end of the gate circuit 101, and is configured to receive and amplify the input pulse signal, so as to control the operating state of the IGBT bridge arm.
When the IGBT legs are turned on to output the inverter current, the detection circuit 105 disposed at the collectors of the IGBT legs detects a current signal at the collectors of the IGBT legs, and outputs the current signal to the signal clamp circuit 106.
The signal clamp circuit 106 is provided with a predetermined value or a reference value.
Specifically, an input terminal of the signal clamp circuit 106 is connected to an output terminal of the detection circuit 105 for receiving the current signal, and an output terminal of the signal clamp circuit 106 is connected to an input terminal of the gate circuit 101.
The signal clamp circuit 106 compares the input current signal with a preset value, and outputs a level signal (high level or low level) to the gate circuit 101 according to the comparison result.
When the IGBT bridge arm is short-circuited or over-current occurs, the current signal input by the detection circuit 105 is greater than the preset value of the signal clamp circuit 106, so that the signal clamp circuit 106 outputs a high level, and the high level is used for clamping the potential of the gate circuit 101 (referring to the potential of the signal input end), so that the potential of the gate circuit 101 is clamped in a low level state.
Specifically, when the IGBT leg is short-circuited or overcurrent occurs, the collector of the IGBT leg is desaturated, the potential at the point a is increased, and when the potential is higher than the potential B (i.e., a preset value), that is, when the current signal is greater than the preset value, the signal clamp circuit 106 is turned over to output a high level, so that the potential inputted by the signal of the gate circuit 101 (the potential corresponding to the point C) is clamped in a low level state, so that the gate circuit 101 always outputs a low level, that is, no matter whether the driving circuit/control circuit sends a high level or a low level, the signal inputted to the subsequent circuit is always a low level, so that the IGBT is turned off, and overcurrent protection is achieved.
By using the technical scheme, the gate circuit for receiving the pulse signal and the signal clamping circuit for outputting the control level according to the comparison result are arranged, namely when the fed-back collector current signal is greater than the preset value of the signal clamping circuit, the high level output by the signal clamping circuit clamps the potential of the gate circuit in a low-potential state, so that the gate circuit always outputs a low level, and further the trigger pulse of an IGBT bridge arm is closed, and the problem that the IGBT is broken down by the peak current due to the slow response speed of the overcurrent protection circuit in the prior art and the long-term use can be effectively solved.
In some embodiments, in order to improve the reliability of the over-current protection circuit, the comparator a102 and the fifth transistor VT105 may be disposed in the signal clamping circuit 106.
The comparator a102 has the functions of comparing signal signals and outputting control levels.
The fifth transistor VT105 has a switching function, and is an NPN transistor.
Specifically, the non-inverting terminal (corresponding to 2 pins) of the comparator a102 is connected to the output terminal of the detection circuit 105, and is configured to receive the current signal fed back by the detection circuit 105.
The inverting terminal (corresponding to pin 2) of the comparator a102 is connected to the preset potential terminal, specifically, the inverting terminal (corresponding to pin 2) of the comparator a102 is connected to the adjustment terminal of a ninth resistor R109, wherein one end of the ninth resistor R109 is connected to one end of an eighth resistor R108, the other end of the eighth resistor R108 is connected to the positive terminal (corresponding to +15V) of the power supply, the other end of the ninth resistor R109 is connected to one end of a tenth resistor R110, and the other end of the tenth resistor R110 is connected to the negative terminal (-5V) of the power supply.
The preset potential terminal is an adjustment terminal of the ninth resistor R109, and the voltage of the preset value is provided by the eighth resistor R108, the ninth resistor R109 and the tenth resistor R110.
Further, the base of the fifth transistor VT105 is connected to the output terminal of the comparator a102 through the twelfth resistor R112, the emitter of the fifth transistor VT105 is connected to the common terminal, and the collector of the fifth transistor VT105 is coupled to the signal input terminal (corresponding to the C terminal) of the gate circuit 101.
Specifically, when an overcurrent occurs, the collector of the IGBT desaturates, the potential at the point a (corresponding to the non-inverting terminal of the comparator a 102) rises, and when the potential is higher than the potential (preset value potential) at the point B (corresponding to the inverting terminal of the comparator a 102), that is, when the current signal exceeds the preset value, the comparator a102 inverts to output a high level, and the fifth transistor VT105 is turned on, so that the potential at the point C is clamped in a low level state, and the gate circuit 101 always outputs a low level.
In some embodiments, in order to improve the accuracy of detecting the current signal, a first diode VD101, a sixth resistor R106, a seventh resistor R107 and a second transistor VT102 may be disposed in the detection circuit 105, wherein the second transistor VT102 has a switching function and is an NPN-type transistor.
The first diode VD101 employs a fast recovery diode that prevents high voltage on its collector from channeling into the drive/control circuitry when the IGBT is turned off.
The sixth resistor R106 is a sampling resistor.
Specifically, the cathode of the first diode VD101 is coupled to the collector of the IGBT arm, and the anode of the first diode VD101 is connected to one end of the sixth resistor R106.
That is, the current signal at the collector of the IGBT is stepped down by the first diode VD101 and then input to the sixth resistor R106.
The other end of the sixth resistor R106 is connected to the non-inverting terminal (corresponding to pin 2) of the comparator a102, the collector of the second transistor VT102, one end of the seventh resistor R107, and the regulation terminal, the other end of the seventh resistor R107 is connected to the positive terminal (corresponding to +15V) of the power supply, the base of the second transistor VT102 is connected to the output terminal of the gate circuit 101, and the emitter of the second transistor VT102 is connected to the common terminal.
Specifically, when the circuit has a short-circuit fault, the voltage of +15V is almost applied to the IGBT when the upper and lower bridge is in a straight-through state, a large current is generated, the second transistor VT102 is turned off in the detection circuit 105, and the potential at the point a is determined by the divided voltage of the first diode VD101, the sixth resistor R106, and the seventh resistor R107.
When the main circuit normally works and the IGBT is turned on, the point a is kept at a low level so as to be lower than the potential at the point B, all the comparators a102 output a low level, at this time, the fifth transistor VT105 is turned off, and the point C is at a high level, so that signals input to the subsequent circuits (corresponding to the isolation circuit 102 and the emitter follower 103) are always kept the same as the output during normal work.
In some embodiments, in order to improve the reliability of the input driving pulse, a first resistor R101 and an and gate a101 may be disposed in the gate circuit 101, wherein one end of the first resistor R101 is connected to the output end of the driving circuit for receiving the pulse signal input by the driving circuit.
The other end of the first resistor R101 is connected to an input terminal (corresponding to the C terminal) of the and gate a101 and a collector of the fifth transistor VT105, respectively, and an output terminal of the and gate a101 is connected to an input terminal of the isolation circuit 102.
When the circuit is normal, the collector of the fifth triode VT105 is at the same potential as the input end (corresponding to the C end) of the and gate a 101;
when the circuit is over-current, the comparator a102 is turned over to output a high level, the fifth transistor VT105 is turned on, so that the potential at the point C is clamped in a low level state, the and gate a101 always outputs a low level, and the isolation circuit 102 is controlled to be turned off.
In some embodiments, in order to improve the safety of the over-current protection circuit, an isolation circuit 102 may be disposed in the over-current protection circuit, wherein the isolation circuit 102 is used to isolate the electrical signal input by the front end.
Specifically, the signal input terminal of the isolation circuit 102 is connected to the output terminal of the gate circuit 101, and is used for receiving and isolating the electrical signal output by the gate circuit 101.
The signal output terminal of the isolation circuit 102 is connected to the input terminal of the emitter follower 103.
Further, the isolation circuit 102 includes a second resistor R102, a photo coupler U101, and a fourth resistor R104, wherein the photo coupler U101 has an isolation function.
Specifically, one end of the second resistor R102 is coupled to the output end of the and gate a101, one input end (corresponding to the anode of the light emitting diode) of the photocoupler U101 is connected to the other end of the second resistor R102, one end of the fourth resistor R104 is connected to the other input end (corresponding to the collector of the triode) of the photocoupler U101, the other end of the fourth resistor R104 is coupled to one end of the emitter follower 103, and the output end of the photocoupler U101 is connected to the other end of the emitter follower 103.
In some embodiments, in order to improve the reliability of the over-current protection circuit, an emitter follower 103 may be provided in the over-current protection circuit, wherein the emitter follower 103 is used to provide a fast current source to reduce the on and off time of the IGBT.
Specifically, one end of the emitter follower 103 is connected to one end (corresponding to the collector of the transistor) of the isolation circuit 102, and the output end of the emitter follower 103 is connected to the input end of the amplification circuit 104.
The emitter follower 103 includes a first transistor VT101 and a fifth resistor R105, wherein the first transistor VT101 has a switching function.
Specifically, the base of the first transistor VT101 is connected to the other input terminal (corresponding to the collector of the transistor) of the photocoupler U101, and the collector of the first transistor VT101 is connected to one end of the fifth resistor R105 and the input terminal of the amplifying circuit 104, respectively.
The emitter of the first transistor VT101 and the other end of the fifth resistor R105 are respectively connected to the output terminal (corresponding to the emitter of the transistor) of the photocoupler U101.
In some embodiments, in order to ensure the reliability of the IGBT bridge arm during operation, a third transistor VT103 and a fourth transistor VT104 may be disposed in the amplifying circuit 104, wherein the third transistor VT103 is an NPN-type transistor, and the fourth transistor VT104 is a PNP-type transistor, which both have a switching function.
Specifically, the bases of the third transistor VT103 and the fourth transistor VT104 are respectively connected to the emitter of the first transistor VT101 and one end of the fifth resistor R105.
The collector of the third triode VT103 is connected with the positive electrode (corresponding to +15V) of the power supply, the collector of the fourth triode VT104 is connected with the negative electrode (corresponding to-5V) of the power supply, and the emitters of the third triode VT103 and the fourth triode VT104 are connected with the gate of the IGBT bridge arm through an eleventh resistor R111.
Specifically, in normal operation:
when a high-level signal is sent by the driving circuit, the photoelectric coupler U101 is conducted, the first triode VT101 and the second triode VT102 are cut off, the third triode VT103 is conducted, the fourth triode VT104 is cut off, and the driving circuit provides +15V driving starting voltage for the IBGT to turn on the IGBT;
when the control driving circuit sends a low level signal, the photocoupler U101 turns off, and the first transistor VT101 and the second transistor VT102 are turned on. The fourth transistor VT104 is turned on and the third transistor VT103 is turned off, and the driving circuit supplies a voltage of-5V to the IBGT, turning off the IGBT.
In some embodiments, in order to avoid the IGBT leg from being turned on by mistake, a bidirectional voltage stabilizing circuit may be further provided between the gate and the emitter of the IGBT leg.
The bidirectional voltage stabilizing circuit is formed by connecting a first voltage stabilizing diode VS101 and a second voltage stabilizing diode VS 102.
Specifically, the anode of the first zener diode VS101 is connected to the emitters of the third transistor VT103 and the fourth transistor VT104, the cathode of the first zener diode VS101 is connected to the cathode of the second zener diode VS102, and the anode of the second zener diode VS102 is connected to the emitter of the IGBT.
And a second capacitor C102 is also arranged between the common end and the-5V voltage end.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the utility model as defined in the appended claims.
Claims (9)
1. An overcurrent protection circuit for a frequency converter, comprising:
a gate circuit, which is arranged on the output side of the drive circuit, and is used for receiving the pulse signal;
the input end of the amplifying circuit is connected with the output end of the gate circuit and is used for amplifying the pulse signal so as to control the working state of an IGBT bridge arm;
the input end of the detection circuit is connected with the collector of the IGBT bridge arm and is used for detecting a current signal of the collector;
a signal clamping circuit, which is provided with a preset value,
the input end of the signal clamping circuit is connected with the output end of the detection circuit and is used for receiving the current signal,
the output end of the signal clamping circuit is connected with the input end of the gate circuit,
the signal clamping circuit compares the input current signal with the preset value and outputs a level signal according to a comparison result;
when the IGBT bridge arm is short-circuited, the signal clamping circuit outputs a high level, and the high level is used for clamping the electric potential of the gate circuit, so that the electric potential of the gate circuit is clamped in a low-potential state.
2. The overcurrent protection circuit of a frequency converter according to claim 1,
the signal clamping circuit comprises a comparator and a fifth triode,
the non-inverting terminal of the comparator is connected with the output terminal of the detection circuit,
the inverting terminal of the comparator is connected with the preset potential terminal,
the base of the fifth triode is coupled with the output end of the comparator,
the emitter of the fifth triode is connected with the common terminal,
the collector of the fifth triode is coupled to the signal input end of the gate circuit.
3. The overcurrent protection circuit of a frequency converter according to claim 2,
the detection circuit comprises a first diode, a sixth resistor, a seventh resistor and a second triode,
the cathode of the first diode is coupled to the collector of the IGBT leg,
the anode of the first diode is connected with one end of the sixth resistor,
the other end of the sixth resistor is respectively connected with the in-phase end of the comparator, the collector of the second triode, one end of the seventh resistor and the adjusting end,
the other end of the seventh resistor is connected with a power supply end,
and the base electrode of the second triode is connected with the output end of the gate circuit, and the emitting electrode of the second triode is connected with the common end.
4. The overcurrent protection circuit of the frequency converter according to claim 3,
the gate circuit comprises a first resistor and an AND gate,
one end of the first resistor is connected with the output end of the driving circuit,
the other end of the first resistor is respectively connected with the input end of the AND gate and the collector of the fifth triode,
and the output end of the AND gate is connected with the input end of the isolation circuit.
5. The overcurrent protection circuit of the frequency converter according to claim 4,
the isolation circuit comprises a second resistor, a photoelectric coupler and a fourth resistor,
one end of the second resistor is coupled to the output end of the AND gate,
one input end of the photoelectric coupler is connected with the other end of the second resistor,
one end of the fourth resistor is connected with the other input end of the photoelectric coupler,
the other end of the fourth resistor is coupled to one end of the emitter follower,
and the output end of the photoelectric coupler is connected with the other end of the emitter follower.
6. The overcurrent protection circuit of the frequency converter according to claim 5,
the emitter follower comprises a first triode and a fifth resistor,
the base electrode of the first triode is connected with the other input end of the photoelectric coupler,
the collector of the first triode is respectively connected with one end of the fifth resistor and the input end of the amplifying circuit,
and the other ends of the emitter of the first triode and the fifth resistor are respectively connected with the output end of the photoelectric coupler.
7. The overcurrent protection circuit of the frequency converter according to claim 6,
the amplifying circuit comprises a third triode and a fourth triode,
the base electrodes of the third triode and the fourth triode are respectively connected with the emitting electrode of the first triode and one end of the fifth resistor,
the collector of the third triode is connected with the positive pole of the power supply, the collector of the fourth triode is connected with the negative pole of the power supply,
and the emitting electrodes of the third triode and the fourth triode are respectively connected with the gate poles of the IGBT bridge arms.
8. The overcurrent protection circuit of the frequency converter according to claim 7,
the third triode is an NPN triode, and the fourth triode is a PNP triode.
9. The overcurrent protection circuit of the frequency converter according to any one of claims 1 to 7,
and a bidirectional voltage stabilizing circuit is also arranged between the gate and the emitter of the IGBT bridge arm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121890866.6U CN216086139U (en) | 2021-08-11 | 2021-08-11 | Overcurrent protection circuit of frequency converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121890866.6U CN216086139U (en) | 2021-08-11 | 2021-08-11 | Overcurrent protection circuit of frequency converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216086139U true CN216086139U (en) | 2022-03-18 |
Family
ID=80669544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121890866.6U Active CN216086139U (en) | 2021-08-11 | 2021-08-11 | Overcurrent protection circuit of frequency converter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216086139U (en) |
-
2021
- 2021-08-11 CN CN202121890866.6U patent/CN216086139U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107329071B (en) | Performance test circuit, device and method of IGBT driver | |
| WO2013174137A1 (en) | Drive circuit of insulated gate bipolar transistor | |
| CN210297240U (en) | IGBT short-circuit fault rapid protection circuit | |
| CN110572011B (en) | IGBT drive circuit soft switching device with short-circuit protection | |
| CN102097789A (en) | Over-current or short-circuit state detection circuit of insulated gate bipolar transistor (IGBT) | |
| CN108418187B (en) | Power conversion circuit, driving circuit thereof and output short circuit protection method | |
| CN113364249B (en) | Protection device and method for IGBT (insulated Gate Bipolar transistor) drive board and frequency converter | |
| CN112865767B (en) | Circuit for improving response speed of short circuit fault of SiC MOSFET device | |
| CN113765070B (en) | IGBT short-circuit protection circuit and method based on inductance current change rate | |
| CN216086139U (en) | Overcurrent protection circuit of frequency converter | |
| CN113676029B (en) | Active clamp circuit based on IGBT | |
| CN210201706U (en) | Inverter driving circuit for high-speed air compressor of fuel cell automobile | |
| CN210469160U (en) | Novel water pump motor control circuit | |
| CN209283196U (en) | The current foldback circuit of insulated gate bipolar transistor | |
| CN216774737U (en) | Semiconductor device short-circuit protection circuit | |
| CN109547001A (en) | The current foldback circuit of insulated gate bipolar transistor | |
| CN211266458U (en) | SiC IGBT driving and protecting system | |
| CN211530733U (en) | Output short-circuit overcurrent protection circuit of uninterrupted power supply | |
| CN109494970B (en) | IGBT (insulated Gate Bipolar transistor) driving circuit, control method thereof and converter | |
| CN216086140U (en) | Short-circuit protection circuit based on frequency converter | |
| CN215120553U (en) | Driving circuit for IGBT | |
| CN215531601U (en) | Overcurrent protection circuit based on electronic atomizer | |
| CN213960041U (en) | IGBT drive circuit and device | |
| CN213547475U (en) | Integrated circuit based on MOS pipe current detection | |
| CN212012457U (en) | Driving circuit based on frequency converter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |