CN217010692U - IGBT wave-by-wave current-limiting drive circuit and drive device of multilevel inverter topology - Google Patents
IGBT wave-by-wave current-limiting drive circuit and drive device of multilevel inverter topology Download PDFInfo
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- CN217010692U CN217010692U CN202123082171.8U CN202123082171U CN217010692U CN 217010692 U CN217010692 U CN 217010692U CN 202123082171 U CN202123082171 U CN 202123082171U CN 217010692 U CN217010692 U CN 217010692U
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Abstract
The utility model discloses an IGBT wave-by-wave current-limiting driving circuit and a driving device of a multilevel inverter topology, wherein the IGBT wave-by-wave current-limiting driving circuit comprises a normal turn-on driving circuit for normally driving an IGBT, a normal turn-off driving circuit for normally turning off the IGBT, a wave-by-wave current-limiting turn-on driving circuit for driving the IGBT to be turned on when a wave-by-wave current-limiting signal is triggered, and a wave-by-wave current-limiting turn-off driving circuit for driving the IGBT to be turned off when the wave-by-wave current-limiting signal is triggered, wherein the output ends of the normal turn-on driving circuit, the normal turn-off driving circuit, the wave-by-wave current-limiting turn-on driving circuit and the wave-by-wave current-limiting turn-on turn-off circuit are all connected with the driving end of the IGBT. Compared with the prior art, the utility model can reduce the peak voltage during turn-off and solve the problem that the IGBT bears overvoltage damage during wave-by-wave current limiting.
Description
Technical Field
The utility model relates to the technical field of IGBT (insulated gate bipolar transistor) wave-by-wave current-limiting driving, in particular to an IGBT wave-by-wave current-limiting driving circuit and a driving device of a multilevel inverter topology.
Background
The wave-by-wave current limiting is an overcurrent protection mode, IGBT current limiting is carried out by detecting transient peak current, but the wave is not completely sealed, overcurrent is detected again, wave is sealed again, and the circulation is carried out all the time.
When the IGBT is turned off, the negative current rate of change-di/dt of the load current and the stray inductance L in the commutation loop cause the turn-off to generate an overvoltage.
As shown in fig. 1, in a three-level NPC (Neutral Point Clamped) topology (L1, L2, L3, L4, L5, and L6 are all stray inductances), when the ripple-by-ripple current limiting occurs in a positive half cycle, the Q1 is turned off first, and then the Q2 is turned off, stray inductances L2 and L5 exist in a commutation loop, and when the Q2 is turned off, the current abruptly changes in a very short time to generate a spike voltage: vpeak ═ L × di/dt, when the current is limited wave by wave, the IGBT is in an overcurrent state, the rate of change of current — di/dt is always large, and the generated peak voltage exceeds the maximum voltage that the IGBT can withstand, easily causing the IGBT to break down.
SUMMERY OF THE UTILITY MODEL
The utility model mainly aims to provide an IGBT wave-by-wave current-limiting driving circuit and a driving device of a multilevel inverter topology, and aims to solve the problem that the IGBT bears overvoltage damage when wave-by-wave current limiting occurs.
In order to achieve the purpose, the utility model provides an IGBT wave-by-wave current-limiting driving circuit, which comprises a normal turn-on driving circuit for normally driving an IGBT, a normal turn-off driving circuit for normally turning off the IGBT, a wave-by-wave current-limiting turn-on driving circuit for driving the IGBT to be turned on when a wave-by-wave current-limiting signal is triggered, and a wave-by-wave current-limiting turn-off driving circuit for driving the IGBT to be turned off when the wave-by-wave current-limiting signal is triggered, wherein the output ends of the normal turn-on driving circuit, the normal turn-off driving circuit, the wave-by-wave current-limiting turn-on driving circuit and the wave-by-wave current-limiting turn-on turn-off driving circuit are all connected with the driving end of the IGBT.
The utility model further adopts the technical scheme that the wave-by-wave current-limiting turn-off driving circuit comprises an inverter (U4-C), a switching tube (Q9), an optocoupler (U6), at least one switching tube (Q10), a diode (D9) and a resistor (R19), wherein the input end of the inverter (U4-C) is used for accessing a first turn-off signal, the output end of the inverter (U4-C) is connected with the driving end of the switching tube (Q9), the second input and output end of the switching tube (Q9) is connected with the input end PIN2 of the optocoupler (U6), the output ends PIN6 and PIN7 of the optocoupler U6 are connected with the driving end of each switching tube (Q10), the second input and output ends of each switching tube (Q10) are connected with the cathode of the diode (D9) through the resistor (R19), and the anode of the diode (D9) is connected with the driving end of the IGBT, the first input and output end of each switching tube (Q10) is connected with a first negative power supply, and the resistor (R19) is used for prolonging the turn-off time so as to reduce the spike voltage during turn-off.
The utility model further provides a normal turn-off driving circuit, which comprises an inverter (U4-A), a switching tube (Q6), an optical coupler (U5), at least one switching tube (Q7) and a diode (D6), wherein an input end of the inverter (U4-A) is used for connecting a second turn-off signal, an output end of the inverter is connected with a driving end of the switching tube (Q6), a second input/output end of the switching tube (Q6) is connected with an input end PIN2 of the optical coupler (U5), output ends PIN6 and PIN7 of the optical coupler (U5) are connected with a driving end of the switching tube (Q7), a second input/output end of the switching tube (Q7) is connected with an anode of the diode (D6), a cathode of the diode (D6) is connected with a driving end of the IGBT, a first input/output end of the switching tube (Q7) is connected with a second negative power supply, and the second negative power supply is used for driving the IGBT (Q7) and the diode (D6) to turn off.
The further technical scheme of the utility model is that the first turn-off signal and the second turn-off signal work at intervals.
The normal turn-off driving circuit further comprises a switching tube (Q8), and the switching tube (Q8) is connected with the switching tube (Q7) in parallel.
The utility model further adopts the technical scheme that the wave-by-wave current-limiting turn-on driving circuit comprises an inverter (U2-C), a switching tube (Q4), an optocoupler (U3), a switching tube (Q5) and a diode (D5), wherein an input end of the inverter (U2-C) inputs a first turn-on signal, an output end of the inverter (U2-C) is connected with a driving end of the switching tube (Q4), a second input and output end of the switching tube (Q4) is connected with an input end PIN2 of the optocoupler (U3), output ends PIN6 and PIN7 of the optocoupler (U3) are connected with a driving end of the switching tube (Q5), a second input and output end of the switching tube (Q5) is connected with an anode of the diode (D5), a cathode of the diode (D5) is connected with a first positive power supply, a first input and output end of the switching tube (Q5) is connected with a driving end of the IGBT, the voltage of the first positive power supply is lower than the positive gate voltage at which the IGBT turns on normally.
The utility model further adopts the technical scheme that the first turn-off signal and the first turn-on signal are two PWM signals with complementary time sequences.
The utility model further adopts the technical scheme that the normal turn-on driving circuit comprises an inverter (U2-D), a switching tube (Q2), an optocoupler (U1), at least one switching tube (Q1) and a diode (D2), wherein a second turn-on signal is input at the input end of the inverter (U2-D), the output end of the inverter (U2-D) is connected with the driving end of the switching tube (Q2), the first input and output end of the switching tube (Q2) is connected with a second positive power supply, the second input and output end of the switching tube (Q2) is connected with an input end PIN2 of the optocoupler (U1), the output ends PIN6 and PIN7 of the optocoupler (U2) are connected with the driving end of the switching tube (Q1), the second input and output end of the switching tube (Q1) is connected with the driving end of the diode (D2), and the cathode of the diode (D2) is connected with the driving end of the IGBT, the voltage of the second positive power supply is higher than the voltage of the first positive power supply.
The utility model further adopts the technical scheme that the normal turn-on driving circuit also comprises at least one switching tube (Q3) connected with the switching tube (Q1) in parallel.
In order to achieve the above object, the present invention further provides a driving apparatus for a multi-level inverter topology, where the multi-level inverter topology includes an inner bridge arm and an outer bridge arm, and the driving apparatus includes: the multiple IGBT wave-by-wave current-limiting driving circuits are connected with one IGBT tube of the inner bridge arm.
The IGBT wave-by-wave current-limiting drive circuit and the drive device of the multilevel inverter topology have the advantages that: according to the technical scheme, the IGBT normally-on driving circuit comprises a normally-on driving circuit for normally driving the IGBT, a normally-off driving circuit for normally turning off the IGBT, a wave-by-wave current-limiting turn-on driving circuit for driving the IGBT to be turned on when a wave-by-wave current-limiting signal is triggered, and a wave-by-wave current-limiting turn-off driving circuit for driving the IGBT to be turned off when the wave-by-wave current-limiting signal is triggered, wherein the output ends of the normally-on driving circuit, the normally-off driving circuit, the wave-by-wave current-limiting turn-on driving circuit and the wave-by-wave current-limiting turn-on and turn-off driving circuit are connected with the driving end of the IGBT, peak voltage during turn-off can be reduced, and the problem that the IGBT is damaged by overvoltage when wave-by current limiting occurs is solved.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the embodiments or technical solutions of the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic diagram of a prior art three-level NPC topology;
FIG. 2 is a schematic circuit diagram of a ripple-by-ripple current-limiting turn-off driving circuit;
FIG. 3 is a schematic circuit diagram of a normal shutdown driving circuit;
FIG. 4 is a schematic diagram of a circuit structure of a wave-by-wave current-limiting turn-on driving circuit;
FIG. 5 is a schematic diagram of a circuit configuration of a normally-on driving circuit;
FIG. 6 is a schematic diagram of the sequential logic of the current-limiting turn-off driving circuit according to the present invention.
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
The technical scheme adopted by the utility model is mainly to reduce di/dt in the turn-off process so as to reduce the turn-off peak voltage to a reasonable value. On one hand, the method comprises the following steps: when the IGBT is turned off, the grid voltage is not directly reduced to 0V or negative voltage, but is converted to positive grid voltage lower than normal turn-on in a short time; another aspect is: the turn-off time is prolonged by increasing the turn-off resistance in a series resistance mode, so that the peak voltage during turn-off is reduced.
Specifically, the preferred embodiment of the present invention includes a normal turn-on driving circuit for normally driving the IGBT, a normal turn-off driving circuit for normally turning off the IGBT, a wave-by-wave current-limiting turn-on driving circuit for driving the IGBT to turn on when a wave-by-wave current-limiting signal is triggered, and a wave-by-wave current-limiting turn-off driving circuit for driving the IGBT to turn off when a wave-by-wave current-limiting signal is triggered, wherein output terminals of the normal turn-on driving circuit, the normal turn-off driving circuit, the wave-by-wave current-limiting turn-on driving circuit, and the wave-by-wave current-limiting turn-on and turn-off driving circuit are all connected to a driving terminal of the IGBT.
In this embodiment, the normal on drive circuit, the normal off drive circuit, the wave-by-wave current-limiting on drive circuit, and the wave-by-wave current-limiting off drive circuit complement each other, and during normal operation, the normal on drive circuit and the normal off drive circuit operate, and the wave-by-wave current-limiting on drive circuit and the wave-by-wave current-limiting off drive circuit do not operate, that is, the IGBT is driven to be normally on and off; when wave-by-wave current limiting is triggered, the normal on drive circuit and the normal off drive circuit do not work, the wave-by-wave current limiting on drive circuit and the wave-by-wave current limiting off drive circuit work, the gate voltage is converted to a positive gate voltage lower than the normal on gate voltage, and the off resistance is increased in a series resistance mode to prolong the off time, so that the peak voltage during off is reduced, and the IGBT is prevented from being damaged due to over voltage.
More specifically, in a preferred embodiment of the present invention, the wave-by-wave current-limiting turn-OFF driving circuit includes an inverter U4-C, a switch tube Q9, an optocoupler U6, at least one switch tube Q10, a diode D9, and a resistor R19, wherein an input end of the inverter U4-C is configured to access a first turn-OFF signal DRV3_ OFF2, an output end of the inverter U4-C is connected to a driving end of the switch tube Q9, a second input/output end of the switch tube Q9 is connected to an input end PIN2 of the optocoupler U6, output ends PIN6 and PIN7 of the optocoupler U6 are connected to the driving ends of the switch tubes Q10, a second input/output end of each switch tube Q10 is connected to a negative electrode of the diode D9 through the resistor R19, a positive electrode of the diode D9 is connected to the driving end of the IGBT, a first input/output end of each switch tube Q10 is connected to a first negative power supply, the resistor R19 is used for prolonging the turn-off time, thereby reducing the spike voltage during turn-off.
When the IGBT triggers a wave-by-wave current-limiting signal, the first turn-OFF signal DRV3_ OFF2 is input to the wave-by-wave current-limiting turn-OFF circuit, the first turn-OFF signal DRV3_ OFF2 is active at a low level, the first turn-OFF signal DRV3_ OFF2 passes through the inverter U4-C, the switching tube Q9 is controlled to be in an OFF state, the photodiode of the optocoupler U6 is driven to be turned OFF, the output terminals PIN6 and PIN7 of the optocoupler U6 are at a low level, the switching tube Q10 is turned on, and the first negative power supply V3_ -10V drives the IGBT to be turned OFF in a delayed manner through the switching tube Q10, the resistor R19 and the diode D9.
As shown in fig. 2, fig. 2 is a schematic circuit structure diagram of the wave-by-wave current-limiting turn-OFF driving circuit, when a wave-by-wave current-limiting signal is triggered, a first turn-OFF signal DRV3_ OFF2 is input at a low level and is active, the switching tube Q9 is turned OFF through the inverter U4-C, the photodiode of the optocoupler U6 is driven to be turned OFF, the output terminals PIN6 and PIN7 of the optocoupler U6 are at a low level, the switching tube Q10 is turned on, and the first negative power supply V3_ 10V (-10V) drives the IGBT to be turned OFF through the anti-reflection diode D2. Compared with the normal turn-off driving circuit, the wave-by-wave current-limiting turn-off driving circuit is provided with more resistors R19, namely, the turn-off time is prolonged by increasing the turn-off resistors in a series resistor mode, so that the peak voltage during turn-off is reduced.
It should be noted that, in the ripple-by-ripple current-limiting turn-off driving circuit shown in fig. 2, the positive power supply +15V is not limited to +10 to +20V, and the first negative power supply V3_ -10V is not limited to-10V to-20V; the switching tubes Q9 and Q10 may be PNP triodes or P-MOS tubes, where the switching tubes Q9 and Q10 in fig. 2 use PNP triodes as examples, the base of the PNP triode is the driving end of the switching tube, the collector of the PNP triode is the first input/output end of the switching tube, and the emitter of the PNP triode is the second input/output end of the switching tube; the switching tube Q10 is not limited to a plurality of parallel connections.
Further, in this embodiment, the normal turn-OFF driving circuit includes an inverter U4-a, a switching tube Q6, an optical coupler U5, at least one switching tube Q7, and a diode D6, wherein an input end of the inverter U4-a is configured to access a second turn-OFF signal DRV3_ OFF1, an output end of the inverter U4-a is connected to a driving end of the switching tube Q6, a second input/output end of the switching tube Q6 is connected to the input end PIN2 of the optical coupler U5, output ends PIN6 and PIN7 of the optical coupler U5 are connected to the driving end of the switching tube Q7, a second input/output end of the switching tube Q7 is connected to an anode of the diode D6, a cathode of the diode D6 is connected to the driving end of the IGBT, and the second negative power source V3 — 10V is configured to drive the IGBT to turn OFF through the switching tube Q7 and the diode D6.
In this embodiment, the normally-off driving circuit may further include a switching tube Q8, and the switching tube Q8 is connected in parallel with the switching tube Q7.
In this embodiment, the first shutdown signal DRV3_ OFF2 and the second shutdown signal DRV3_ OFF1 operate at intervals. The second turn-OFF signal DRV3_ OFF1 is active at a low level, when the second turn-OFF signal DRV3_ OFF1 is at a low level, the second turn-OFF signal DRV3_ OFF1 controls the switching tube Q6 to be in an OFF state through the inverter U4-a, the photodiode of the optocoupler U5 is driven to be turned OFF, the output terminals PIN6 and PIN7 of the optocoupler U5 are at a low level, the switching tube Q7 and the switching tube Q8 are turned on, and the second negative power supply V3_ 10V drives the IGBT to be turned OFF through the diode D6.
As shown in fig. 3, fig. 3 is a schematic circuit structure diagram of a normal turn-OFF driving circuit, a low level of an input second turn-OFF signal DRV3_ OFF1 is active, the switching tube Q6 is turned OFF through the inverter U4-a, the photodiode of the optocoupler U5 is driven to be turned OFF, the output terminals PIN6 and PIN7 of the optocoupler U5 are at a low level, the switching tube Q7 and the switching tube Q8 are turned on, the IGBT is turned OFF at a second negative power supply V3_ -10V (-10V), and the diode D6 drives the IGBT to be turned OFF, where the diode D6 is an anti-reverse diode.
Note that, in the normal off drive circuit shown in fig. 3, the positive power supply +15V is not limited to +10 to +20V, and the second negative power supply V3 — 10V is not limited to-10V to-20V; the switching tubes Q6, Q7, and Q8 are PNP triodes or P-MOS tubes, wherein the switching tubes Q6, Q7, and Q8 in fig. 3 use PNP triodes as examples, the base of the PNP triode is the driving end of the switching tube, the collector of the PNP triode is the first input/output end of the switching tube, and the emitter of the PNP triode is the second input/output end of the switching tube; the normally-off driving circuit further comprises a switching tube Q8, and the switching tube Q8 is connected in parallel with the switching tube Q7, and in a specific implementation, is not limited to one or more switching tubes connected in parallel.
Further, in this embodiment, the wave-by-wave current-limiting turn-on driving circuit includes an inverter U2-C, a switching tube Q4, an optocoupler U3, a switching tube Q5, and a diode D5, wherein the input end of the inverter U2-C inputs a first opening signal DRV3_ ON2, the output end of the inverter U2-C is connected with the driving end of the switch tube Q4, the second input and output end of the switch tube Q4 is connected with the input end PIN2 of the optocoupler U3, the output ends PIN6 and PIN7 of the optocoupler U3 are connected with the driving end of the switching tube Q5, the second input/output end of the switch tube Q5 is connected to the anode of the diode D5, the cathode of the diode D5 is connected to the first positive power supply V3_ +12V, the first input and output end of the switching tube Q5 is connected to the driving end of the IGBT, and the voltage of the first positive power supply V3_ +12V is lower than the positive gate voltage of the IGBT which is normally turned on.
In this embodiment, the first OFF signal DRV3_ OFF2 and the first ON signal DRV3_ ON2 are two PWM signals with complementary timing sequences.
The first opening signal DRV3_ ON2 is effective at a low level, when the IGBT triggers a wave-by-wave current-limiting signal, the first opening signal DRV3_ ON2 is input into the wave-by-wave current-limiting opening drive circuit, the first opening signal DRV3_ ON2 passes through the inverter U2-C to control the switching tube Q4 to be opened to drive the photodiode of the optocoupler U3 to be conducted, the output ends PIN6 and PIN7 of the optocoupler U3 are at a high level, and the switching tube Q5 is opened, namely, the grid voltage is converted to a positive grid voltage lower than the normal opening voltage.
As shown in fig. 4, fig. 4 is a schematic circuit structure diagram of a wave-by-wave current-limiting turn-ON driving circuit, when a wave-by-wave current-limiting signal is triggered, a low level of an input DRV3_ ON2 is active, the switching tube Q4 is turned ON through the inverter U2-C to drive the photodiode of the optocoupler U3 to be turned ON, the output terminals PIN6 and PIN7 of the optocoupler U3 are at a high level, the switching tube Q5 is turned ON, and an IGBT driving voltage is pulled to a first positive power supply V3_ +12V (+12V), that is, the gate voltage is converted to a positive gate voltage lower than a normally turned-ON voltage.
It should be noted that, in the wave-by-wave current-limiting turn-on driving circuit shown in fig. 4, the second positive power supply V3_ +15V is not limited to +10 to +20V, the negative power supply is not limited to-10V to-20V, the first positive power supply V3_ +12V is not limited to +9V to +13V, but is guaranteed to be lower than the second positive power supply V3_ + 15V; the switching tubes Q4 and Q5 are NPN triodes or N-MOS tubes, wherein the switching tubes Q4 and Q5 in fig. 4 use NPN triodes as examples, a base of the NPN triode is a driving end of the switching tube, a collector of the NPN triode is a first input/output end of the switching tube, and an emitter of the NPN triode is a second input/output end of the switching tube; the switching tube Q5 is not limited to a plurality of parallel connections.
Further, in this embodiment, the normally-on driving circuit includes an inverter U2-D, a switching tube Q2, an optocoupler U1, at least one switching tube Q1, and a diode D2, wherein the input end of the inverter U2-D inputs a second ON signal DRV3_ ON1, the output end of the inverter U2-D is connected with the driving end of the switch tube Q2, the first input and output end of the switch tube Q2 is connected with a second positive power supply V3_ +15V, the second input and output end of the switching tube Q2 is connected with the input end PIN2 of the optocoupler U1, the output ends PIN6 and PIN7 of the optocoupler U2 are connected with the driving end of the switching tube Q1, a second input/output end of the switching tube Q1 is connected to the anode of the diode D2, the cathode of the diode D2 is connected to the driving end of the IGBT, the voltage of the second positive power supply V3_ +15V is higher than the voltage of the first positive power supply V3_ + 12V.
The input second turn-ON signal DRV3_ ON1 is active at a low level, the second turn-ON signal DRV3_ ON1 passes through the inverter U2-D, the switch tube Q2 is turned ON to drive the photodiode of the optocoupler U1 to be turned ON, the output end PIN6 of the optocoupler U1 and the PIN7 are driven at a high level to drive the switch tube Q1 to be turned ON, and the second positive power supply V3_ +15V drives the IGBT to be turned ON through the diode D2.
As shown in fig. 5, fig. 5 is a schematic circuit structure diagram of a normal turn-ON driving circuit, a second turn-ON signal DRV3_ ON1 is input with effective low level, the switch tube Q2 is turned ON through the inverter U2-D to drive the photodiode of the optical coupler U1 to be turned ON, the output end PIN6 and the PIN7 of the optical coupler U1 with high level drive the switch tube Q1 to be turned ON, and 15V drives the IGBT to be turned ON through the anti-reflection diode D2.
The normally-on driving circuit shown in fig. 5 further includes at least one switching tube Q3 connected in parallel with the switching tube Q1. The positive power supply +15V is not limited to +10 to +20V, and the negative power supply is not limited to-10V to-20V; the switching tubes Q1, Q2, and Q3 are PNP triodes or P-MOS tubes, wherein the switching tubes Q1, Q2, and Q3 in fig. 5 use PNP triodes as examples, the base of the PNP triode is the driving end of the switching tube, the collector of the PNP triode is the first input/output end of the switching tube, and the emitter of the PNP triode is the second input/output end of the switching tube; the normally-on driving circuit may further include a switching tube Q3 connected in parallel with the switching tube Q1, and in a specific implementation, the normally-on driving circuit is not limited to one or more parallel connections.
It is worth mentioning that, in the present embodiment, each switch tube may adopt a corresponding triode or MOS tube.
Referring to fig. 6, fig. 6 is a schematic timing logic diagram of the wave-by-wave current-limiting turn-off driving circuit of the present invention.
The high level of the current limiting signal Limit _ H is effective, the normal working state is carried out at the moment a-b, the second turn-ON signal DRV3_ ON1 and the second turn-OFF signal DRV3_ OFF1 drive wave generation, the time sequence signals are complementary, and the first turn-ON signal DRV3_ ON2 and the first turn-OFF signal DRV3_ OFF2 do not work; triggering the current limiting signal at the b-c moment, enabling the second ON signal DRV3_ ON1 and the second OFF signal DRV3_ OFF1 to be inoperative, driving the wave generation by the first ON signal DRV3_ ON2 and the first OFF signal DRV3_ OFF2, and complementing the timing signals; the current-limiting signal disappears at the moment c, and the working state at the moments c-d is the same as that at the moments a-b.
The IGBT wave-by-wave current-limiting drive circuit has the beneficial effects that: according to the technical scheme, the IGBT normally-on driving circuit comprises a normally-on driving circuit for normally driving the IGBT, a normally-off driving circuit for normally turning off the IGBT, a wave-by-wave current-limiting turn-on driving circuit for driving the IGBT to be turned on when a wave-by-wave current-limiting signal is triggered, and a wave-by-wave current-limiting turn-off driving circuit for driving the IGBT to be turned off when the wave-by-wave current-limiting signal is triggered, wherein the output ends of the normally-on driving circuit, the normally-off driving circuit, the wave-by-wave current-limiting turn-on driving circuit and the wave-by-wave current-limiting turn-on and turn-off driving circuit are connected with the driving end of the IGBT, peak voltage during turn-off can be reduced, and the problem that the IGBT is damaged by overvoltage when wave-by current limiting occurs is solved.
In order to achieve the above object, the present invention further provides a driving apparatus for a multi-level inverter topology, where the multi-level inverter topology includes an inner bridge arm and an outer bridge arm, the driving apparatus includes multiple paths of the IGBT wave-by-wave current-limiting driving circuits according to the above embodiments, and one IGBT wave-by-wave current-limiting driving circuit is connected to one IGBT tube of the inner bridge arm. The structure and the operating principle of the IGBT wave-by-wave current-limiting driving circuit are believed to be described above, and are not described here.
In one embodiment, in the three-level NPC topology shown in fig. 1, the IGBT Q2 and the IGBT Q3 are inner arms of the three-level NPC topology, and accordingly, the driving device includes two paths of the IGBT wave-by-wave current-limiting driving circuits as described above, one IGBT wave-by-wave current-limiting driving circuit is connected with the IGBT Q2, and one IGBT wave-by-wave current-limiting driving circuit is connected with the IGBT Q3.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. The IGBT wave-by-wave current-limiting driving circuit is characterized by comprising a normal turn-on driving circuit for normally driving an IGBT, a normal turn-off driving circuit for normally turning off the IGBT, a wave-by-wave current-limiting turn-on driving circuit for driving the IGBT to be turned on when a wave-by-wave current-limiting signal is triggered, and a wave-by-wave current-limiting turn-off driving circuit for driving the IGBT to be turned off when the wave-by-wave current-limiting signal is triggered, wherein the output ends of the normal turn-on driving circuit, the normal turn-off driving circuit, the wave-by-wave current-limiting turn-on driving circuit and the wave-by-wave current-limiting turn-on turn-off driving circuit are connected with the driving end of the IGBT.
2. The IGBT wave-by-wave current-limiting drive circuit according to claim 1, characterized in that the wave-by-wave current-limiting turn-off drive circuit comprises an inverter U4-C, a switching tube Q9, an optocoupler U6, at least one switching tube Q10, a diode D9 and a resistor R19, wherein an input end of the inverter U4-C is used for accessing a first turn-off signal, an output end of the inverter U4-C is connected with a drive end of the switching tube Q9, a second input and output end of the switching tube Q9 is connected with an input end PIN2 of the optocoupler U6, output ends PIN6 and PIN7 of the optocoupler U6 are connected with the drive end of each switching tube Q10, a second input and output end of each switching tube Q10 is connected with a cathode of the diode D9 through the resistor R19, an anode of the diode D9 is connected with the drive end of the IGBT, a first input and output end of each switching tube Q10 is connected with a first negative power source, the resistor R19 is used for prolonging the turn-off time, and further reducing the spike voltage during turn-off.
3. The IGBT ripple current limit drive circuit of claim 2, the normal turn-off driving circuit comprises an inverter U4-A, a switching tube Q6, an optocoupler U5, at least one switching tube Q7 and a diode D6, wherein, the input end of the inverter U4-A is used for connecting a second turn-off signal, the output end is connected with the driving end of the switch tube Q6, a second input end and a second output end of the switching tube Q6 are connected with an input end PIN2 of the optocoupler U5, the output ends PIN6 and PIN7 of the optocoupler U5 are connected with the driving end of the switching tube Q7, a second input/output end of the switching tube Q7 is connected to the anode of the diode D6, the cathode of the diode D6 is connected to the driving end of the IGBT, the first input and output end of the switching tube Q7 is connected with a second negative power supply, and the second negative power supply is used for driving the IGBT to be turned off through the switching tube Q7 and the diode D6.
4. The IGBT ripple-through current-limiting drive circuit of claim 3, wherein the first turn-off signal and the second turn-off signal operate at intervals.
5. The IGBT ripple-through current-limiting drive circuit of claim 3, wherein the normally-off drive circuit further comprises a switch transistor Q8, and the switch transistor Q8 is connected in parallel with the switch transistor Q7.
6. The IGBT ripple current limit drive circuit of claim 3, the wave-by-wave current-limiting turn-on driving circuit comprises an inverter U2-C, a switching tube Q4, an optocoupler U3, a switching tube Q5 and a diode D5, wherein, the input end of the inverter U2-C inputs a first opening signal, the output end of the inverter U2-C is connected with the driving end of the switch tube Q4, the second input and output end of the switching tube Q4 is connected with the input end PIN2 of the optocoupler U3, the output ends PIN6 and PIN7 of the optocoupler U3 are connected with the driving end of the switching tube Q5, the second input/output end of the switch tube Q5 is connected to the anode of the diode D5, the cathode of the diode D5 is connected to the first positive power supply, the first input and output end of the switching tube Q5 is connected with the driving end of the IGBT, and the voltage of the first positive power supply is lower than the positive gate voltage of the IGBT which is normally turned on.
7. The IGBT ripple-through current-limiting drive circuit of claim 6, wherein the first turn-off signal and the first turn-on signal are two PWM signals with complementary timing.
8. The IGBT ripple-through current-limiting drive circuit of claim 6, the normally-on driving circuit comprises an inverter U2-D, a switching tube Q2, an optocoupler U1, at least one switching tube Q1 and a diode D2, wherein, the input end of the inverter U2-D inputs a second turn-on signal, the output end of the inverter U2-D is connected with the driving end of the switch tube Q2, the first input and output end of the switching tube Q2 is connected with the second positive power supply, the second input and output end of the switching tube Q2 is connected with the input end PIN2 of the optocoupler U1, the output ends PIN6 and PIN7 of the optocoupler U2 are connected with the driving end of the switching tube Q1, a second input/output end of the switching tube Q1 is connected to the anode of the diode D2, the cathode of the diode D2 is connected to the driving end of the IGBT, and the voltage of the second positive power supply is higher than that of the first positive power supply.
9. The IGBT ripple-through current-limiting driver circuit of claim 8, wherein the normally-on driver circuit further comprises at least one switching transistor Q3 connected in parallel with the switching transistor Q1.
10. A driving apparatus for a multilevel inverter topology, the multilevel inverter topology comprising an inner leg and an outer leg, the driving apparatus comprising:
the multiple paths of IGBT wave-by-wave current-limiting driving circuits according to any one of claims 1-9, wherein one IGBT wave-by-wave current-limiting driving circuit is connected with one IGBT tube of the inner bridge arm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024108910A1 (en) * | 2022-11-24 | 2024-05-30 | 阳光电源股份有限公司 | Igct converter, power supply system, and overcurrent protection method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024108910A1 (en) * | 2022-11-24 | 2024-05-30 | 阳光电源股份有限公司 | Igct converter, power supply system, and overcurrent protection method |
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