CN214612842U - 一种生长氟化锂单晶的装置 - Google Patents
一种生长氟化锂单晶的装置 Download PDFInfo
- Publication number
- CN214612842U CN214612842U CN202120742841.5U CN202120742841U CN214612842U CN 214612842 U CN214612842 U CN 214612842U CN 202120742841 U CN202120742841 U CN 202120742841U CN 214612842 U CN214612842 U CN 214612842U
- Authority
- CN
- China
- Prior art keywords
- crucible
- inner crucible
- lithium fluoride
- single crystal
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202120742841.5U CN214612842U (zh) | 2021-04-13 | 2021-04-13 | 一种生长氟化锂单晶的装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202120742841.5U CN214612842U (zh) | 2021-04-13 | 2021-04-13 | 一种生长氟化锂单晶的装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN214612842U true CN214612842U (zh) | 2021-11-05 |
Family
ID=78401485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202120742841.5U Active CN214612842U (zh) | 2021-04-13 | 2021-04-13 | 一种生长氟化锂单晶的装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN214612842U (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116676668A (zh) * | 2023-08-03 | 2023-09-01 | 北京奇峰蓝达光学科技发展有限公司 | 一种用于生长大尺寸紫外级氟化钙晶体的提拉法单晶炉 |
-
2021
- 2021-04-13 CN CN202120742841.5U patent/CN214612842U/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116676668A (zh) * | 2023-08-03 | 2023-09-01 | 北京奇峰蓝达光学科技发展有限公司 | 一种用于生长大尺寸紫外级氟化钙晶体的提拉法单晶炉 |
CN116676668B (zh) * | 2023-08-03 | 2023-12-12 | 北京奇峰蓝达光学科技发展有限公司 | 一种用于生长大尺寸紫外级氟化钙晶体的提拉法单晶炉 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN113061980A (zh) | 一种生长氟化锂单晶的装置及生长方法 | |
CA1261715A (en) | Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique | |
CN103938270B (zh) | 镓重掺杂低位错锗单晶的生长方法 | |
CN110923810A (zh) | 大尺寸单晶硅等径生长过程中调控液面位置的装置及工艺 | |
CN102260900B (zh) | 提高单晶硅纵向电阻率一致性的装置及其处理工艺 | |
CN104372399A (zh) | 一种单晶硅收尾方法及单晶硅制备方法 | |
CN106637402A (zh) | 单晶硅平收尾方法及制备方法 | |
KR101153907B1 (ko) | 결정 성장 장치 및 결정 성장 방법 | |
CN214612842U (zh) | 一种生长氟化锂单晶的装置 | |
CN202989351U (zh) | 基于多加热器的铸锭炉热场结构 | |
JPWO2018003386A1 (ja) | 単結晶製造装置および単結晶製造方法 | |
KR101563221B1 (ko) | 단결정 제조장치 및 단결정의 제조방법 | |
WO2017019453A1 (en) | Systems and methods for low-oxygen crystal growth using a double-layer continuous czochralski process | |
CN103147119B (zh) | 一种氟化镁晶体的制备方法及生长设备 | |
KR101271649B1 (ko) | 단결정 실리콘 시드를 이용한 고품질 다결정 실리콘 잉곳의 제조방법 | |
CN202144523U (zh) | 一种提高单晶硅纵向电阻率一致性的装置 | |
KR101596550B1 (ko) | 잉곳성장장치 및 잉곳성장방법 | |
EP3572560A1 (en) | Single crystal manufacturing device and single crystal manufacturing method | |
EP2955252A1 (en) | Method for preparing solar grade silicon single crystal using czochralski zone melting method | |
WO2010071614A1 (en) | Process for producing multicrystalline silicon ingots by the induction method and apparatus for carrying out the same | |
JP5136278B2 (ja) | シリコン単結晶の製造方法 | |
CN114232075A (zh) | 一种rcz直拉法大热场拉多晶工艺 | |
CN211036174U (zh) | 一种晶体生长装置 | |
JP4461699B2 (ja) | 単結晶の製造方法 | |
KR20130007354A (ko) | 실리콘 결정 성장장치 및 그를 이용한 실리콘 결정 성장방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: A device for growing lithium fluoride single crystal Effective date of registration: 20220207 Granted publication date: 20211105 Pledgee: Changjiang Technology sub branch of Qinhuangdao Bank Co.,Ltd. Pledgor: INTRINIC CRYSTAL TECHNOLOGY CO.,LTD. Registration number: Y2022980001386 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230202 Granted publication date: 20211105 Pledgee: Changjiang Technology sub branch of Qinhuangdao Bank Co.,Ltd. Pledgor: INTRINIC CRYSTAL TECHNOLOGY CO.,LTD. Registration number: Y2022980001386 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right |