CN214588803U - Silicon chip strutting arrangement and chemical bath - Google Patents

Abstract

The utility model discloses a silicon chip strutting arrangement and chemical bath relates to the silicon chip and makes technical field. The silicon wafer supporting device comprises two supporting guide rails which are oppositely arranged and a lifting guide rail which is arranged between the two supporting guide rails, the supporting surfaces of the two supporting guide rails are oppositely arranged, supporting grooves are arranged on the supporting surfaces, the groove bottoms of the supporting grooves are arc-shaped, the edges of the silicon wafers are wrapped by the groove bottoms of the supporting grooves so as to support the silicon wafers, and the lifting guide rail drives the silicon wafers to lift or is separated from the silicon wafers under the state that the silicon wafers are borne in the supporting grooves. The silicon wafer supporting device has the advantages that the supporting guide rail is in tight contact with the silicon wafer, the swinging of the silicon wafer in the processing process is effectively reduced, the damage of the silicon wafer is reduced, the damage of the silicon wafer to the supporting guide rail is also reduced, in addition, the lifting guide rail of the silicon wafer supporting device can be separated from the silicon wafer, and the damage of the lifting guide rail caused by the damage of the silicon wafer is reduced.

Description

Silicon chip strutting arrangement and chemical bath

Technical Field

The utility model relates to a silicon chip makes technical field, particularly, relates to a silicon chip strutting arrangement and chemical bath.

Background

In a semiconductor wet process, a silicon wafer is usually placed in a chemical tank, and a chemical solution of 120-160 ° is used to remove an excess silicon oxide film on the surface of the silicon wafer and to remove a photoresist. In the existing chemical tank for wet process, a linear support guide rail is usually used for supporting one half of a silicon wafer, and a silicon wafer lifting guide rail is adopted for lifting the silicon wafer at the edge of the silicon wafer, so that the silicon wafer moves up and down in the chemical tank.

However, the contact between the conventional linear support guide rail and the silicon wafer is not tight enough, and the silicon wafer swings in a wet process, thereby damaging the silicon wafer. In addition, in the wet process, the silicon wafer is processed in a high-temperature acid environment, the high-temperature acid environment can cause certain damage to the silicon wafer, and the silicon wafer can also cause internal damage and even breakage in the process of carrying out multiple processes on the silicon wafer, and the damage to the silicon wafer can cause the damage to the linear support guide rail and the silicon wafer lifting guide rail.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a silicon chip strutting arrangement and chemical bath to among the solution prior art, the silicon chip is in the technical problem of wet-type technology fragile supporting guide and lifting guide.

The embodiment of the utility model is realized like this:

the embodiment of the utility model provides an aspect provides a silicon chip strutting arrangement, including two supporting guide and the lifting guide of setting between two supporting guide that set up relatively, two supporting guide's holding surface set up relatively, are equipped with on the holding surface and support the groove, and the tank bottom that supports the groove is the arc, and the tank bottom parcel silicon chip that supports the groove is marginal in order to support the silicon chip, and lifting guide drives the silicon chip and goes up and down or bear in the silicon chip and support under the state in the inslot with the silicon chip separation.

Optionally, the support rail is provided with a plurality of support grooves, and the plurality of support grooves are arranged in parallel along the extending direction of the support rail.

Optionally, the extending direction of the lifting guide rail is the same as the extending direction of the support guide rail, and the length of the lifting guide rail is greater than or equal to the length of the support guide rail.

Optionally, the surface of the lifting guide rail facing the support guide rail is provided with a lifting groove, and the lifting groove is arranged corresponding to the support groove.

Optionally, the bottom of the lifting groove is V-shaped, and two slopes of the bottom of the lifting groove are tangential to the edge of the silicon wafer.

Optionally, an included angle between the two inclined planes is 90 ° to 120 °.

Optionally, the bottom of the lifting groove is arc-shaped, and the bottom of the lifting groove wraps the edge of the silicon wafer.

Optionally, the diameter of the bottom of the lifting groove is equal to the diameter of the silicon wafer.

Optionally, the width of the support groove is the same as the thickness of the silicon wafer.

The utility model discloses on the other hand of embodiment provides a chemical tank, including cell body and the foretell silicon chip strutting arrangement of setting inside the cell body, two supporting guide of silicon chip strutting arrangement are connected with two lateral walls of cell body respectively.

The utility model discloses beneficial effect includes:

the embodiment of the utility model provides a silicon chip strutting arrangement is including relative two supporting guide that set up and the lifting guide of setting between two supporting guide, and two supporting guide's holding surface sets up relatively, is equipped with on the holding surface and supports the groove, and the tank bottom that supports the groove is the arc, supports the tank bottom parcel silicon chip in groove the edge in order to support the silicon chip, and lifting guide drives the silicon chip and goes up and down or hold in the silicon chip and separate with the silicon chip under the state that supports the inslot. The two support guide rails are arranged oppositely, the support surfaces of the two support guide rails are close to each other, and the support surfaces are provided with support grooves which are used for containing silicon wafers. The bottom of the supporting groove is in contact with the edge of the silicon wafer to support the silicon wafer, and two opposite side walls of the supporting groove are in contact with the surface of the silicon wafer to prevent the silicon wafer from inclining. The tank bottom of supporting the groove is the arc, and the curved tank bottom is laminated with the edge of silicon chip mutually, has improved the compactness of contact between tank bottom and the silicon chip, simultaneously, has increased the area of contact between tank bottom and the silicon chip for the tank bottom is more stable to the support of silicon chip, only leans on two support guide rails to support the silicon chip, and can not cause the swing of silicon chip, need not other mechanisms and assists. The lifting guide rail is arranged between the two supporting guide rails and can move up and down along the two supporting guide rails to be close to or far away from the silicon wafer. When the silicon wafer is loaded in the supporting groove, the lifting guide rail descends and is separated from the silicon wafer, and the damage of the silicon wafer to the lifting guide rail is avoided. When the silicon wafer needs to be lifted to be away from the supporting guide rail, the lifting guide rail rises to lift the silicon wafer. The silicon wafer supporting device has the advantages that the supporting guide rail is in tight contact with the silicon wafer, the swinging of the silicon wafer in the processing process is effectively reduced, the damage of the silicon wafer is reduced, the damage of the silicon wafer to the supporting guide rail is also reduced, in addition, the lifting guide rail of the silicon wafer supporting device can be separated from the silicon wafer, and the damage of the lifting guide rail caused by the damage of the silicon wafer is reduced.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

FIG. 1 is a schematic structural diagram of a silicon wafer fixing and moving device in the prior art;

FIG. 2 is a second schematic structural diagram of a silicon wafer fixing and moving device in the prior art;

fig. 3 is a schematic structural diagram of a silicon wafer supporting device according to an embodiment of the present invention;

fig. 4 is a schematic structural diagram of a support guide rail in the silicon wafer support device according to an embodiment of the present invention;

FIG. 5 is a cross-sectional view A-A of FIG. 4;

fig. 6 is a schematic structural view of a lifting guide rail in the silicon wafer supporting device according to an embodiment of the present invention;

fig. 7 is a second schematic structural view of a silicon wafer supporting device according to an embodiment of the present invention;

fig. 8 is a schematic structural diagram of a chemical tank according to an embodiment of the present invention.

Icon: 10-silicon wafer fixing and moving device; 11-linear support rails; 12-silicon chip lifting guide rails; 20-a silicon wafer support means; 21-a support rail; 211-a support surface; 212-support slots; 22-a lifting guide rail; 221-a lifting groove; 30-a chemical tank; 31-a trough body; 40-silicon chip.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the accompanying drawings, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

In the description of the present invention, it should be noted that the terms "center", "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention. The terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Referring to fig. 1 and 2, in a wet semiconductor process, a silicon wafer 40 is usually placed in a chemical bath 30, and a chemical solution of 120 ° to 160 ° is used to remove an excess silicon oxide film and remove photoresist on the surface of the silicon wafer 40. Be equipped with fixed and mobile device 10 of silicon chip in chemical tank 30, including linear support guide rail 11 and silicon chip lifting guide rail 12, linear support guide rail 11 includes two, support silicon chip 40 at the both ends of silicon chip 40 diameter respectively, silicon chip lifting guide rail 12 sets up between two linear support guide rails 11, with two linear support guide rail 11 cooperations, support silicon chip 40 in the bottom of silicon chip 40, prevent that silicon chip 40 from dropping, simultaneously, can also drive silicon chip 40 up-and-down motion in chemical tank 30.

However, the contact between the conventional linear support rail 11 and the silicon wafer 40 is not tight enough, and the silicon wafer 40 swings (see the dotted line in fig. 1) during the process of processing the silicon wafer 40, and the silicon wafer 40 is damaged due to the forward and backward swinging of the silicon wafer 40. In addition, the high-temperature acidic environment of the wet process and the multiple processing processes may further cause internal damage or even breakage of the silicon wafer 40, and damage to the silicon wafer 40 may cause damage to the linear support guide rail 11 and the silicon wafer lifting guide rail 12. In view of this, the present application is specifically made.

Referring to fig. 3 to 5, the embodiment provides a silicon wafer supporting device 20, which includes two supporting rails 21 disposed opposite to each other and a lifting rail 22 disposed between the two supporting rails 21, wherein the supporting surfaces 211 of the two supporting rails 21 are disposed opposite to each other, a supporting groove 212 is disposed on the supporting surface 211, a groove bottom of the supporting groove 212 is arc-shaped, an edge of a silicon wafer 40 is wrapped by the groove bottom of the supporting groove 212 to support the silicon wafer 40, and the lifting rail 22 drives the silicon wafer 40 to lift or separate from the silicon wafer 40 in a state where the silicon wafer 40 is carried in the supporting groove 212.

The two support rails 21 are disposed opposite to each other, the support surfaces 211 of the two support rails are close to each other, and the support surfaces 211 are provided with support grooves 212, wherein the support grooves 212 are used for accommodating the silicon wafers 40. The bottom of the support groove 212 contacts the edge of the silicon wafer 40 to support the silicon wafer 40, and the opposite sidewalls of the support groove 212 contact the surface of the silicon wafer 40 to prevent the silicon wafer 40 from tilting. The groove bottom of the supporting groove 212 is arc-shaped, the arc-shaped groove bottom is attached to the edge of the silicon wafer 40, the contact tightness between the groove bottom and the silicon wafer 40 is improved, meanwhile, the contact area between the groove bottom and the silicon wafer 40 is increased, the groove bottom supports the silicon wafer 40 more stably, the silicon wafer 40 can be supported only by the two supporting guide rails 21, the silicon wafer 40 cannot swing, and other mechanisms are not needed for assistance.

The elevating guide 22 is disposed between the two support guides 21 and can move up and down between the two support guides 21 to approach or separate from the silicon wafer 40. When the silicon wafer 40 is loaded in the supporting groove 212, the lifting guide rail 22 descends to be separated from the silicon wafer 40, so that the damage of the silicon wafer 40 to the lifting guide rail 22 is avoided. When the silicon wafer 40 needs to be lifted up and separated from the support rail 21, the lift rail 22 is raised to lift the silicon wafer 40.

In summary, the silicon wafer supporting device 20 includes two supporting rails 21 disposed oppositely and a lifting rail 22 disposed between the two supporting rails 21, the supporting surfaces 211 of the two supporting rails 21 are disposed oppositely, a supporting groove 212 is disposed on the supporting surface 211, a groove bottom of the supporting groove 212 is arc-shaped, the groove bottom of the supporting groove 212 wraps the edge of the silicon wafer 40 to support the silicon wafer 40, and the lifting rail 22 drives the silicon wafer 40 to lift or separate from the silicon wafer 40 in a state that the silicon wafer 40 is supported in the supporting groove 212. The supporting guide rail 21 of the silicon wafer supporting device 20 is in tight contact with the silicon wafer 40, so that the swinging of the silicon wafer 40 in the processing process is effectively reduced, the damage of the silicon wafer 40 is further reduced, the damage of the silicon wafer 40 to the supporting guide rail 21 is also reduced, in addition, the lifting guide rail 22 of the silicon wafer supporting device 20 can be separated from the silicon wafer 40, and the damage of the lifting guide rail 22 caused by the damage of the silicon wafer 40 is reduced.

Referring to fig. 3 and 4, optionally, a plurality of support grooves 212 are provided, and the plurality of support grooves 212 are disposed in parallel along the extending direction of the support rail 21.

The support rail 21 extends in a direction perpendicular to the surface of the silicon wafer 40 in fig. 3. The plurality of support grooves 212 are arranged in the extending direction of the support rail 21, and the plurality of support grooves 212 are parallel to each other, so that the support rail 21 can simultaneously support a plurality of silicon chips 40, and mutual noninterference between two adjacent silicon chips 40 is ensured.

Alternatively, the extending direction of the lifting rail 22 is the same as the extending direction of the support rail 21 and the length of the lifting rail 22 is greater than or equal to the length of the support rail 21.

The extension direction of the elevation guide 22 coincides with the extension direction of the support guide 21 to control the silicon wafer 40 on the support guide 21 to ascend and descend. Meanwhile, the length of the lifting guide rail 22 is greater than or equal to that of the support guide rail 21, so that the lifting guide rail 22 can be simultaneously contacted with or separated from all the silicon wafers 40 on the support guide rail 21 in the lifting and descending processes, and the phenomenon that individual silicon wafers 40 are not lifted due to the fact that the lifting guide rail 22 is not long enough and cannot extend to the positions of the silicon wafers 40 is avoided.

Referring to fig. 4 and fig. 6, optionally, the surface of the lifting rail 22 facing the support rail 21 is provided with a lifting groove 221, and the lifting groove 221 is disposed corresponding to the support groove 212.

The surface of the lifting guide rail 22 is provided with a lifting groove 221, the lifting groove 221 is used for accommodating and fixing the silicon wafer 40, the groove bottom of the support groove 212 is used for lifting the silicon wafer 40, and the two opposite side walls are used for shielding the silicon wafer 40 so as to prevent the silicon wafer 40 from toppling over after the lifting guide rail 22 lifts the silicon wafer 40 and is separated from the support guide rail 21.

The lifting grooves 221 on the lifting guide rail 22 correspond to the supporting grooves 212 on the supporting guide rail 21 one by one, and the number, the size and the arrangement position of the lifting grooves and the supporting grooves are the same along the linear direction vertical to the surface of the silicon wafer 40, so that the lifting guide rail 22 can simultaneously control the lifting of the silicon wafers 40 on the supporting guide rail 21.

Referring to fig. 3 and 6, alternatively, the bottom of the lifting groove 221 is V-shaped, and two slopes of the bottom of the lifting groove 221 are simultaneously tangent to the edge of the silicon wafer 40.

The bottom of the lifting groove 221 is formed by connecting two inclined planes, the two inclined planes are arranged oppositely and have the same inclination angle, and are respectively tangent to the silicon wafer 40 at two sides of the silicon wafer 40 to apply upward supporting force to the silicon wafer 40 and clamp the silicon wafer 40 in the horizontal direction.

Optionally, the included angle between the two inclined planes is 90 ° to 120 °.

If the included angle between the two inclined planes is too small, the space for accommodating the silicon wafer 40 at the bottom of the lifting groove 221 is narrow, the silicon wafer 40 cannot be better supported from two sides of the silicon wafer 40, and the silicon wafer 40 is easy to roll; if the included angle between the two inclined planes is too large, the bottom of the lifting groove 221 is close to a plane, and the silicon wafer 40 is likely to roll on the bottom of the groove. When the included angle between the two inclined planes is 90-120 degrees, the lifting groove 221 has the best supporting effect on the silicon wafer 40, and the silicon wafer 40 is not easy to shake in the lifting process.

Referring to fig. 7, optionally, the bottom of the lifting groove 221 is arc-shaped, and the bottom of the lifting groove 221 wraps the edge of the silicon wafer 40.

The bottom of the lifting groove 221 is arc-shaped, and the contact surface between the lifting groove 221 and the silicon wafer 40 is an arc surface, so that the edge of the silicon wafer 40 can be wrapped and the shaking of the silicon wafer 40 at the bottom of the groove in the lifting process can be limited.

Alternatively, the diameter of the bottom of the lifting groove 221 is equal to the diameter of the silicon wafer 40.

The diameter of the bottom of the lifting groove 221 is equal to that of the silicon wafer 40, so that the bottom of the lifting groove 221 can be completely attached to the edge of the silicon wafer 40 in the process of controlling the lifting of the silicon wafer 40 by the lifting guide rail 22, the stability of the silicon wafer 40 can be improved, and the swing of the silicon wafer 40 can be reduced.

Alternatively, the width of the support groove 212 is the same as the thickness of the silicon wafer 40.

The width of the supporting groove 212 is equal to the thickness of the silicon wafer 40, and when the silicon wafer 40 is loaded in the supporting groove 212, the two side walls of the supporting groove 212 are completely attached to the two side walls of the silicon wafer 40, so that the silicon wafer 40 is further prevented from swinging in the supporting groove 212, the probability of damage to the silicon wafer 40 is reduced, and the damage of the silicon wafer 40 to the supporting guide rail 21 is also reduced.

Referring to fig. 8, the present embodiment further provides a chemical tank 30, which includes a tank body 31 and the silicon wafer supporting device 20 disposed inside the tank body 31, wherein two supporting rails 21 of the silicon wafer supporting device 20 are respectively connected to two sidewalls of the tank body 31.

In the wet process, the silicon wafer 40 is set in the chemical bath 30, and the excess silicon oxide film and the photoresist on the surface of the silicon wafer 40 are removed by using the chemical solution of 120 ° to 160 ° in the chemical bath 30. The silicon wafer supporting device 20 is disposed in the chemical bath 30 to support the silicon wafer 40 and control the up-and-down movement of the silicon wafer 40 during the processing. The chemical bath 30 can effectively prevent the silicon wafer 40 from swinging, reduce damage to the silicon wafer 40, and reduce damage to the silicon wafer support device 20 due to damage to the silicon wafer 40.

In the foregoing explanation of the silicon wafer supporting device 20, the operation manner, the operation principle, and the like of the silicon wafer supporting device 20 disposed in the chemical bath 30 have been described in detail, and are not described again.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. The utility model provides a silicon chip strutting arrangement which characterized in that, including relative two support guide that set up and setting two lift guide between the support guide, two the holding surface of support guide sets up relatively, be equipped with on the holding surface and prop up the groove, the tank bottom that props up the groove is the arc, prop up the tank bottom parcel silicon chip of groove the edge in order right the silicon chip supports, the lift guide drive the silicon chip goes up and down or the silicon chip bear in prop up under the inslot state with the silicon chip separation.

2. The silicon wafer support device of claim 1, wherein the support grooves are plural, and the plural support grooves are arranged in parallel along the extending direction of the support rail.

3. The silicon wafer support device of claim 2, wherein the direction of extension of the lift rail is the same as the direction of extension of the support rail and the length of the lift rail is greater than or equal to the length of the support rail.

4. The silicon wafer supporting device according to claim 2, wherein the surface of the lifting guide rail facing the supporting guide rail is provided with lifting grooves, and the lifting grooves are provided corresponding to the supporting grooves.

5. The silicon wafer support device of claim 4, wherein the bottom of the lifting groove is V-shaped, and the two slopes of the bottom of the lifting groove are simultaneously tangent to the edge of the silicon wafer.

6. The silicon wafer support apparatus of claim 5, wherein the included angle between the two inclined surfaces is 90 ° to 120 °.

7. The silicon wafer support device of claim 4, wherein the bottom of the lifting groove is rounded and wraps around the edge of the silicon wafer.

8. The wafer support apparatus of claim 7, wherein the bottom of the lift slot has a diameter equal to the diameter of the wafer.

9. The silicon wafer support apparatus of claim 1, wherein the support groove has a width that is the same as a thickness of the silicon wafer.

10. A chemical tank, comprising a tank body and a silicon wafer supporting device as claimed in any one of claims 1 to 9 arranged inside the tank body, wherein two supporting rails of the silicon wafer supporting device are respectively connected with two side walls of the tank body.

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