CN214458448U - Silicon carbide single crystal growth device - Google Patents
Silicon carbide single crystal growth device Download PDFInfo
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- CN214458448U CN214458448U CN202022899300.1U CN202022899300U CN214458448U CN 214458448 U CN214458448 U CN 214458448U CN 202022899300 U CN202022899300 U CN 202022899300U CN 214458448 U CN214458448 U CN 214458448U
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- crucible
- ring body
- middle ring
- cover
- crystal growth
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Abstract
The utility model discloses a carborundum single crystal growth device, including the crucible lid, middle ring body, at the bottom of the crucible and throat water conservancy diversion cover, be provided with the go-between around the bottom of throat water conservancy diversion cover, the go-between sets up along the horizontal direction, the top surface of go-between sets up with the bottom surface laminating of middle ring body, the bottom surface of go-between sets up with the top surface laminating at the bottom of the crucible, the outside of go-between is provided with the last installing sleeve that upwards extends and downwardly extending's lower installing sleeve, the installing sleeve is provided with the installation annular on the cooperation of middle ring body, the installing sleeve is provided with down the installation annular under the cooperation on the crucible bottom. The utility model provides a throat water conservancy diversion cover adopts novel mounting structure, has not only realized and has been connected with the location between the middle ring body and the crucible end, and easy to assemble can not appear influencing the condition of leakproofness because frequent dismouting wearing and tearing moreover again, structurally realized the absolute seal of junction at the bottom of middle ring body and the crucible, guaranteed the long-term stable use of carborundum single crystal growth device.
Description
Technical Field
The utility model relates to a carborundum growth technology field especially relates to a carborundum single crystal growth device.
Background
Silicon carbide as the third generation semiconductor has stable chemical properties, high thermal conductivity, small thermal expansion coefficient, good wear resistance, large forbidden bandwidth, high breakdown field strength, high saturation electron mobility and other excellent properties, and is widely applied to the fields of power electronics, radio frequency devices, photoelectronic devices and the like, the existing crystal growth method of silicon carbide single crystal is mainly a PVT method, in the method, a device for seed crystal growth is usually a graphite crucible, in the actual operation, the seed crystal is adhered to a crucible cover, raw materials at the bottom of the crucible are sublimated into gas under the sintering effect, the gas rises upwards and grows on the surface of the seed crystal, in the process, a part of gas is volatilized upwards and then returns to the surface of the raw materials, the lifting phenomenon of the raw materials occurs, further the sintering of the raw materials is unstable, and the volatilization stability of the gas is influenced, ultimately affecting the growth quality of the seed crystal.
In order to solve the above problems, the publication No. CN211713255U discloses a seed crystal growth device, the structure of which is shown in figure 1, comprising a crucible cover 1-1, an intermediate ring body 1-2 and a crucible bottom 1-3, the crucible cover 1-1 covers the top of the intermediate ring body 1-2, a necking guide sleeve 1-4 is arranged between the intermediate ring body 1-2 and the crucible bottom 1-3, a convex structure 1-5 corresponding to the top of the necking guide sleeve 1-4 is arranged at the bottom of the crucible cover 1-1, seed crystals are adhered on the convex structure 1-5, raw materials 1-6 are contained in the crucible bottom 1-3, when the seed crystal growth device is used, the raw materials are heated, the necking guide sleeve plays a role in controlling the flow direction of the gas after the raw materials are sublimated, so that the gas flows to the seed crystals on the convex structure, make turn back gas can not influence the sublimation of raw materials, and can not influence the growth of the structural seed crystal of arch, in foretell structure, though in order to guarantee the leakproofness, set up the bottom of throat water conservancy diversion cover into the structure of laminating mutually with the inner wall of middle ring body, but at frequent dismouting in-process, because reasons such as wearing and tearing can lead to the cooperation position clearance to appear, influence the result of use in later stage, and whole device is in the assembly at every turn, because the structure is fairly simple, so be difficult to once adorn in place, influence the result of use.
SUMMERY OF THE UTILITY MODEL
The utility model aims to avoid the defects of the prior art and provide a silicon carbide single crystal growth device, thereby effectively solving the defects existing in the prior art.
In order to achieve the above purpose, the utility model adopts the following technical scheme: the utility model provides a carborundum single crystal growth device, includes at the bottom of crucible cover, middle ring body, the crucible and throat water conservancy diversion cover, middle ring body sets up the top at the bottom of the crucible, and the crucible cover sets up at the top of middle ring body, and throat water conservancy diversion cover is located middle ring body, and the bottom of crucible cover is provided with the protruding structure that is used for pasting the seed crystal, be provided with the go-between around the bottom of throat water conservancy diversion cover, go-between along the horizontal direction setting, the top surface of go-between and the bottom surface laminating setting of middle ring body, the bottom surface of go-between and the top surface laminating setting at the bottom of the crucible, the outside of go-between is provided with the last installation cover that upwards extends and downwardly extending's lower installation cover, the installation cover is provided with the installation annular on the cooperation of middle ring body, and the installation cover is provided with down the installation annular under the cooperation on the crucible bottom.
Furthermore, the outer surface of the upper mounting sleeve is flush with the outer surface of the middle ring body, and the outer surface of the lower mounting sleeve is flush with the outer surface of the crucible bottom.
Furthermore, a positioning edge is arranged on the crucible cover, and a positioning ring groove is arranged on the middle ring body in a matched positioning way.
Further, the upper mounting sleeve and the lower mounting sleeve are equal in height.
Furthermore, the necking diversion sleeve, the connecting ring, the upper mounting sleeve and the lower mounting sleeve are of an integrated structure.
The above technical scheme of the utility model following beneficial effect has: the utility model provides a throat water conservancy diversion cover adopts novel mounting structure, has not only realized and has been connected with the location between the middle ring body and the crucible end, and easy to assemble can not appear influencing the condition of leakproofness because frequent dismouting wearing and tearing moreover again, structurally realized the absolute seal of junction at the bottom of middle ring body and the crucible for gaseous passage in the throat water conservancy diversion cover only can follow, guaranteed the long-term stable use of carborundum single crystal growth device.
Drawings
FIG. 1 is a schematic view showing the structure of a silicon carbide single crystal growth apparatus according to the prior art;
FIG. 2 is a schematic structural diagram of an embodiment of the present invention;
fig. 3 is a partially enlarged view of a portion a in fig. 2.
Detailed Description
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings and examples. The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention.
In the description of the present invention, "a plurality" means two or more unless otherwise specified; the terms "upper", "lower", "left", "right", "inner", "outer", "front", "rear", "head", "tail", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are merely for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 2-3, the silicon carbide single crystal growth apparatus described in this embodiment includes a crucible cover 1, an intermediate ring body 2, a crucible bottom 3 and a necking flow guide sleeve 4, a raw material 5 for sublimation by heating is contained in the crucible bottom 3, the intermediate ring body 2 is disposed on the top of the crucible bottom 3, the crucible cover 1 is disposed on the top of the intermediate ring body 2, the necking flow guide sleeve 4 is located in the intermediate ring body 2, a protrusion structure 101 for attaching a seed crystal is disposed on the bottom of the crucible cover 1, a connection ring 401 is disposed around the bottom of the necking flow guide sleeve 4, the connection ring 401 is disposed along a horizontal direction, the top surface of the connection ring 401 is attached to the bottom surface of the intermediate ring body 2, the bottom surface of the connection ring 401 is attached to the top surface of the crucible bottom 3, an upper mounting sleeve 402 extending upward and a lower mounting sleeve 403 extending downward are disposed on the outer side of the connection ring 401, an upper mounting ring 201 is disposed on the intermediate ring body 2 in cooperation with the upper mounting sleeve 402, the crucible bottom 3 is provided with a lower mounting ring groove 301 by matching with a lower mounting sleeve 403.
The outer surface of the upper mounting sleeve 402 is flush with the outer surface of the intermediate ring body 2, and the outer surface of the lower mounting sleeve 403 is flush with the outer surface of the crucible bottom 3.
The crucible cover 1 is provided with a positioning edge 102, and the middle ring body 2 is provided with a positioning ring groove matched with the positioning edge 102.
The upper mounting sleeve 402 and the lower mounting sleeve 403 are equal in height.
The necking diversion sleeve 4, the connecting ring 401, the upper mounting sleeve 402 and the lower mounting sleeve 403 are of an integrated structure.
The utility model provides a throat water conservancy diversion cover adopts novel mounting structure, has not only realized and has been connected with the location between the middle ring body and the crucible end, and easy to assemble can not appear influencing the condition of leakproofness because frequent dismouting wearing and tearing moreover again, structurally realized the absolute seal of junction at the bottom of middle ring body and the crucible for gaseous passage in the throat water conservancy diversion cover only can follow, guaranteed the long-term stable use of carborundum single crystal growth device.
The embodiments of the present invention have been presented for purposes of illustration and description, and are not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiment was chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.
Claims (5)
1. The utility model provides a carborundum single crystal growth device, includes at the bottom of crucible cover, middle ring body, crucible and throat water conservancy diversion cover, middle ring body sets up the top at the bottom of the crucible, and the crucible cover sets up at the top of middle ring body, and the throat water conservancy diversion cover is located middle ring body, and the bottom of crucible cover is provided with the protruding structure that is used for pasting the seed crystal, its characterized in that: be provided with the go-between around the bottom of throat water conservancy diversion cover, the go-between sets up along the horizontal direction, and the top surface of go-between sets up with the bottom surface laminating of middle ring body, and the bottom surface of go-between sets up with the top surface laminating at the bottom of the crucible, and the outside of go-between is provided with the last installation cover of upwards extending and downwardly extending's lower installation cover, the installation cover is provided with the installation annular on the cooperation on the middle ring body, and the installation cover is provided with down the installation annular under the cooperation on the crucible bottom.
2. A silicon carbide single crystal growth apparatus according to claim 1, wherein: the outer surface of the upper mounting sleeve is flush with the outer surface of the middle ring body, and the outer surface of the lower mounting sleeve is flush with the outer surface of the crucible bottom.
3. A silicon carbide single crystal growth apparatus according to claim 1, wherein: the crucible cover is provided with a positioning edge, and the middle ring body is provided with a positioning ring groove in a matching and positioning edge.
4. A silicon carbide single crystal growth apparatus according to claim 1, wherein: the upper mounting sleeve and the lower mounting sleeve are equal in height.
5. A silicon carbide single crystal growth apparatus according to claim 1, wherein: the necking diversion sleeve, the connecting ring, the upper mounting sleeve and the lower mounting sleeve are of an integrated structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022899300.1U CN214458448U (en) | 2020-12-07 | 2020-12-07 | Silicon carbide single crystal growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022899300.1U CN214458448U (en) | 2020-12-07 | 2020-12-07 | Silicon carbide single crystal growth device |
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| Publication Number | Publication Date |
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| CN214458448U true CN214458448U (en) | 2021-10-22 |
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| CN202022899300.1U Active CN214458448U (en) | 2020-12-07 | 2020-12-07 | Silicon carbide single crystal growth device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116516467A (en) * | 2023-04-13 | 2023-08-01 | 通威微电子有限公司 | Thermal field device for silicon carbide crystal growth |
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2020
- 2020-12-07 CN CN202022899300.1U patent/CN214458448U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116516467A (en) * | 2023-04-13 | 2023-08-01 | 通威微电子有限公司 | Thermal field device for silicon carbide crystal growth |
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