CN116516467A - Thermal field device for silicon carbide crystal growth - Google Patents
Thermal field device for silicon carbide crystal growth Download PDFInfo
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- CN116516467A CN116516467A CN202310393840.8A CN202310393840A CN116516467A CN 116516467 A CN116516467 A CN 116516467A CN 202310393840 A CN202310393840 A CN 202310393840A CN 116516467 A CN116516467 A CN 116516467A
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- crucible
- silicon carbide
- thermal field
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- 239000013078 crystal Substances 0.000 title claims abstract description 82
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 45
- 230000000903 blocking effect Effects 0.000 claims abstract description 42
- 238000009413 insulation Methods 0.000 claims abstract description 24
- 238000004321 preservation Methods 0.000 claims abstract description 20
- 239000007789 gas Substances 0.000 claims description 60
- 238000007789 sealing Methods 0.000 claims description 38
- 230000004888 barrier function Effects 0.000 claims description 32
- 210000000078 claw Anatomy 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005452 bending Methods 0.000 description 27
- 239000012495 reaction gas Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000008093 supporting effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a silicon carbide crystal growth thermal field device, which relates to the technical field of silicon carbide crystal growth, and comprises a growth crucible, a seed crystal carrier, a blocking cover body and an insulating layer, wherein the growth crucible is used for placing silicon carbide powder; the seed crystal carrier is arranged on the growth crucible and used for fixing seed crystals; the blocking cover body is covered outside the growth crucible and the seed crystal carrier; the heat preservation layer is arranged outside the blocking cover body; the inner side wall of the blocking cover body is spaced from the outer side wall of the growth crucible, so that a buffer cavity is formed between the blocking cover body and the growth crucible, buffer gas is filled in the buffer cavity, and the blocking cover body is used for blocking the gas in the buffer cavity from contacting with the heat insulation layer. Compared with the prior art, the silicon carbide crystal growth thermal field device provided by the invention can effectively inhibit the corrosion of gas to the heat preservation layer, ensure the integrity of the heat preservation layer, and further ensure the repeatability and stability of the internal thermal field, thereby ensuring the quality and performance of the growth of the silicon carbide crystal.
Description
Technical Field
The invention relates to the technical field of silicon carbide crystal growth, in particular to a thermal field device for silicon carbide crystal growth.
Background
Silicon carbide (SiC) is used as an emerging third-generation semiconductor core material, has the advantages of wide forbidden band, high critical breakdown electric field intensity, high electron mobility, good irradiation resistance, good chemical stability and the like, becomes an important substrate wafer material for wide application, and has good application prospect in the fields of aviation devices, new energy automobiles, rail transit, household appliances and the like.
At present, a physical gas phase transport method is mainly used for growing silicon carbide crystals, however, the inventor researches that the heat preservation felt in the prior art is easy to be corroded by reaction gas in the process of growing the silicon carbide crystals, thereby influencing the repeatability and the stability of a thermal field and further seriously influencing the performance of the grown silicon carbide crystals.
Disclosure of Invention
The invention aims to provide a silicon carbide crystal growth thermal field device which can effectively inhibit corrosion of gas to a thermal insulation felt and ensure the repeatability and the stability of a thermal field.
Embodiments of the invention may be implemented as follows:
the embodiment of the invention provides a silicon carbide crystal growth thermal field device, which comprises:
the growth crucible is used for placing silicon carbide powder;
the seed crystal carrier is arranged on the growth crucible and used for fixing seed crystals;
the blocking cover body is covered outside the growth crucible and the seed crystal carrier;
the heat preservation layer is arranged outside the blocking cover body;
the inner side wall of the blocking cover body is spaced from the outer side wall of the growth crucible, so that a buffer cavity is formed between the blocking cover body and the growth crucible, buffer gas is filled in the buffer cavity, and the blocking cover body is used for blocking the gas in the buffer cavity from contacting with the heat insulation layer.
In an alternative embodiment, the buffer gas includes at least one of argon, nitrogen, hydrogen, helium.
In an alternative embodiment, the gas pressure in the buffer chamber is between 1 and 800 mbar.
In an alternative embodiment, the growth crucible is placed in the blocking cover body, a placement opening is formed in the blocking cover body, a sealing cover is movably arranged on the placement opening, and the sealing cover is used for opening or closing the placement opening.
In an alternative embodiment, a placement table is further arranged on the bottom wall of the blocking cover body, a fixing structure is arranged on the placement table, and the growth crucible is placed on the placement table and detachably connected with the fixing structure.
In an alternative embodiment, the fixing structure comprises a plurality of movable claws, the movable claws are distributed on the placing table along a circumferential direction, and each movable claw is clamped at the bottom edge of the growth crucible so as to fix the growth crucible on the placing table.
In an optional embodiment, the sealing cover is further provided with a first gas pipe and a second gas pipe which are both communicated with the buffer cavity, the first gas pipe is used for introducing the buffer gas into the buffer cavity, and the second gas pipe is used for pumping out the gas in the buffer cavity.
In an alternative embodiment, the buffer chamber has a width that is greater than the width of the growth crucible and the buffer chamber has a width that is less than 10 times the width of the growth crucible.
In an alternative embodiment, the growth crucible comprises a crucible body and a growth ring arranged on the inner side of the crucible body, wherein the crucible body is used for placing the silicon carbide powder, the seed crystal carrier is arranged on the top end of the crucible body, one end of the growth ring is connected to the inner side of the crucible body, and the other end of the growth ring extends obliquely towards the seed crystal carrier and is used for extending to the edge of the seed crystal.
In an alternative embodiment, a first sealing convex ring is arranged at the inner edge of the top end of the crucible body, a second sealing convex ring is arranged at the outer edge of the bottom end of the seed crystal carrier, and the first sealing convex ring and the second sealing convex ring are buckled with each other, so that a labyrinth sealing structure is formed between the top end of the crucible body and the bottom end of the seed crystal carrier.
The beneficial effects of the embodiment of the invention include, for example:
according to the silicon carbide growing device provided by the embodiment of the invention, the seed crystal carrier is arranged on the growing crucible to realize the effect of fixing the seed crystal, meanwhile, the outer covers of the growing crucible and the seed crystal carrier are provided with the blocking cover body, and the insulating layer is arranged outside the blocking cover body, wherein the inner side wall of the blocking cover body is spaced from the outer side wall of the growing crucible, so that a buffer cavity is formed between the blocking cover body and the growing crucible, and the blocking cover body is used for blocking gas in the buffer cavity to contact with the insulating layer. During actual growth, the growth crucible is heated by an external heat source, silicon carbide powder in the growth crucible sublimates to form gas, and the reaction gas which escapes from the growth crucible slightly is blocked by the blocking cover body due to the existence of the buffer cavity and the blocking cover body, so that the reaction gas is inhibited from corroding an external heat preservation layer, and the integrity of the heat preservation layer can be ensured. Compared with the prior art, the silicon carbide crystal growth thermal field device provided by the invention can effectively inhibit the corrosion of gas to the heat preservation layer, ensure the integrity of the heat preservation layer, and further ensure the repeatability and stability of the internal thermal field, thereby ensuring the quality and performance of the growth of the silicon carbide crystal.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an assembled structure of a silicon carbide growth apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of the barrier shield of FIG. 1 from another perspective;
FIG. 3 is a schematic view of the assembly structure of the movable jaw of FIG. 2;
FIG. 4 is a schematic view of a part of a silicon carbide growth apparatus according to an embodiment of the present invention;
fig. 5 is an enlarged partial view of v in fig. 4.
Icon: a 100-silicon carbide crystal growth thermal field device; 110-growing a crucible; 111-a crucible body; 113-growth ring; 115-a first sealing collar; 117-a second sealing collar; 130-seed carrier; 150-a barrier cover; 151-sealing cover; 1511-a first gas tube; 1513-a second gas tube; 1515-a first one-way valve; 1517-a second one-way valve; 153-placing table; 155-movable jaws; 1551-a first bending spring piece; 1553-second bending spring pieces; 157-a spindle; 159-connecting slots; 170-an insulating layer; 190-buffer chamber; 200-inoculating crystal; 300-silicon carbide powder.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present invention and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
In the silicon carbide growth process, the PVT method is generally utilized for growth, a growth device is generally of a crucible structure, a seed crystal cover is required to be arranged at the top end of the crucible, seed crystals are adhered to the inner side of the seed crystal cover, so that the fixation of the seed crystals is realized, a tiny gap is easy to appear between the seed crystal cover and the crucible, thereby the reaction gas in the crucible is caused to escape outwards, meanwhile, the crucible is generally made of a graphite material, and the situation that a small amount of reaction gas escapes easily occurs at the joint.
As disclosed in the background art, since the outside of the crucible in the conventional art is generally coated with a thermal insulation felt, such as a carbon felt, gas escaping from the crucible in the prior art is easy to corrode the thermal insulation felt, and the integrity of the thermal insulation felt is easily damaged after long-term use, so that the thermal insulation effect is affected, and further the thermal field inside the crucible is affected, the repeatability and stability of the thermal field are reduced, which is not beneficial to growing silicon carbide crystals.
In addition, the insulation is realized through the cladding of the insulation felt in the conventional technology, and the insulation felt is aged or damaged due to cladding errors, uneven gluing thickness and the like or due to long-term use, and the insulation capability of the insulation felt is different everywhere, so that uniform insulation cannot be realized, and the internal thermal field is influenced.
In order to solve the above-mentioned problems, the present invention provides a novel silicon carbide crystal growth thermal field device 100, and it should be noted that the features of the embodiments of the present invention may be combined with each other without collision.
Referring to fig. 1, the invention provides a silicon carbide growing device, which can effectively inhibit the corrosion of gas to a thermal insulation felt, and promote the thermal insulation uniformity of the carbon felt, thereby ensuring the repeatability and stability of a thermal field and being beneficial to the growth of silicon carbide crystals.
The embodiment provides a thermal field device 100 for growing silicon carbide crystals, which comprises a growth crucible 110, a seed crystal carrier 130, a blocking cover body 150 and an insulating layer 170, wherein the growth crucible 110 is used for placing silicon carbide powder 300; a seed carrier 130 is provided on the growth crucible 110 for fixing the seed 200; the barrier shield 150 is disposed outside the growth crucible 110 and the seed carrier 130; the heat preservation layer 170 is arranged outside the barrier cover body; wherein, the inner side wall of the blocking cover body 150 is spaced from the outer side wall of the growth crucible 110, so that a buffer cavity 190 is formed between the blocking cover body 150 and the growth crucible 110, the buffer cavity 190 is filled with buffer gas, and the blocking cover body 150 is used for blocking the gas in the buffer cavity 190 from contacting with the heat insulation layer 170.
In the present embodiment, the thermal field device 100 for silicon carbide crystal growth is mainly used for PVT growth of silicon carbide crystal, and can provide a stable and reliable thermal field structure, thereby ensuring the growth quality of silicon carbide crystal. Wherein, the heat preservation layer 170 can be a conventional heat preservation felt structure, such as carbon felt, and can play a role in preserving heat inside the barrier cover 150, and the heat preservation layer 170 is attached to the barrier cover 150 and can be spaced from the growth crucible 110.
In the thermal field device 100 for growing silicon carbide crystals in this embodiment, a barrier cover body 150 is arranged on the outer cover of the growth crucible 110 and the seed crystal carrier 130, and a thermal insulation layer 170 is arranged outside the barrier cover body 150, wherein the inner side wall of the barrier cover body 150 is spaced from the outer side wall of the growth crucible 110, so that a buffer cavity 190 is formed between the barrier cover body 150 and the growth crucible 110. During actual growth, the growth crucible 110 is heated by using an external heat source, silicon carbide powder 300 in the growth crucible 110 sublimates to form gas, and a small amount of reaction gas escaping from the growth crucible 110 is blocked by the blocking cover 150 due to the existence of the buffer cavity 190 and the blocking cover 150, so that the reaction gas is inhibited from corroding the external heat preservation layer 170, the integrity of the heat preservation layer 170 can be ensured, and the repeatability and the stability of an internal thermal field can be further ensured. In addition, the buffer chamber 190 is filled with buffer gas, so that the effect of uniform temperature can be achieved, the temperature of the periphery of the growth crucible 110 is more uniform, and the repeatability and stability of an internal thermal field are further ensured.
It should be noted that, in this embodiment, the buffer gas includes at least one of argon, nitrogen, hydrogen and helium, and when actually assembling, the air in the buffer cavity 190 may be first pumped out, and specifically the vacuum pumping technique may be used to pump the buffer cavity 190Empty, so that the pressure of the buffer chamber 190 is 5×10 -6 Below mbar, a buffer gas, such as nitrogen, is then introduced into the buffer chamber 190, which prevents reaction with silicon carbide and also serves as a soak for thermal insulation.
In this embodiment, the gas pressure in the buffer chamber 190 is between 1-800 mbar. Specifically, the gas pressure in the buffer cavity 190 may be 700mbar, so that the buffer cavity 190 can play a role in buffering, and a small amount of gas in the growth crucible 110 can escape to the buffer cavity 190 and be mixed into the buffer gas, so as to inhibit the gas in the growth crucible 110 from bursting through the barrier cover 150 and diffusing outwards.
In this embodiment, the blocking cover 150 may have a cylindrical shape, a rectangular block shape, or the like, and is not particularly limited herein. Preferably, the barrier shield 150 may be cylindrical to facilitate placement of the insulation 170.
Referring to fig. 2 to 5 in combination, in the present embodiment, the growth crucible 110 is placed in the barrier cover 150, a placement opening is formed in the barrier cover 150, a sealing cover 151 is movably disposed on the placement opening, and the sealing cover 151 is used for opening or closing the placement opening. Specifically, the growth crucible 110 is placed at the center of the blocking cover 150, so that the width of the buffer cavity 190 at the periphery of the growth crucible 110 is uniform, and uniformity of heat conduction capability is further ensured, thereby avoiding variation of internal thermal field caused by inconsistent local heat conduction capability of the growth crucible 110. Meanwhile, the placement opening can be formed in the top end of the barrier cover body 150, the placement opening is formed, the growth crucible 110 can be conveniently placed in or taken out of the barrier cover body 150, and the sealing cover 151 is arranged to be helpful to ensure the sealing performance of the barrier cover body 150.
In the case where the sealing cover 151 closes the placement opening, the barrier cover 150 is in a closed state, and the growth crucible 110 and the seed carrier 130 are placed on the inner bottom wall of the barrier cover 150 after being assembled, so that the outward diffusion of the gas can be blocked in a plurality of directions. In addition, the edge of the sealing cover 151 is further provided with a sealing ring, and the sealing of the opening is realized by using the sealing ring, and the specific sealing structure can refer to the sealing structure of the existing reaction chamber, and will not be described in detail herein.
In this embodiment, a placement table 153 is further provided on the bottom wall of the barrier cover 150, a fixing structure is provided on the placement table 153, and the growth crucible 110 is placed on the placement table 153 and detachably connected with the fixing structure. Specifically, the placement table 153 is located at the center of the bottom wall of the barrier cover 150, and fixes the bottom of the growth crucible 110 through a fixing structure, so that the growth crucible 110 can be kept stable during the growth process, and the crystal growth quality can be improved. In other preferred embodiments of the present invention, the growth crucible 110 may be disposed at other locations of the barrier enclosure 150 and secured by other means, not specifically limited herein.
The fixing structure includes a plurality of movable claws 155, the plurality of movable claws 155 are distributed on the placing table 153 in a circumferential direction, and each movable claw 155 is caught at the bottom edge of the growth crucible 110 to fix the growth crucible 110 on the placing table 153. Specifically, each movable claw 155 can be switched between the open state and the buckling state relative to the placing table 153, when the growth crucible 110 leaves the placing table 153, the movable claws 155 can be driven to open so as to avoid the movable claws 155 from affecting the action of the growth crucible 110, and when the growth crucible 110 is placed, the growth crucible 110 can drive the movable claws 155 to buckle, so that the growth crucible 110 is fixed on the placing table 153, and the stability of the growth crucible 110 in the growth process is ensured.
In this embodiment, each movable claw 155 includes a first bending elastic piece 1551 and a second bending elastic piece 1553, the first bending elastic piece 1551 and the second bending elastic piece 1553 are integrally bent, an included angle between the first bending elastic piece 1551 and the second bending elastic piece 1553 is 75 ° -85 °, and the second bending elastic piece 1553 is closer to the center of the placement table 153. A rotating shaft 157 is disposed at the connection position of the first bending elastic piece 1551 and the second bending elastic piece 1553, and the rotating shaft 157 is rotatably connected to the edge of the placement table 153, so that the first bending elastic piece 1551 and the second bending elastic piece 1553 can rotate freely relative to the placement table 153. Specifically, the edge of the placement table 153 is provided with a connection groove 159, the connection groove 159 is inclined to penetrate the side surface and the top surface of the placement table 153, and shaft holes are formed in opposite side walls of the connection groove 159, and both ends of the rotation shaft 157 are rotatably assembled in the shaft holes, thereby realizing free rotation between the movable claws 155 and the placement table 153.
When the growth crucible 110 is actually placed, the plurality of movable claws 155 are arranged in the growth crucible 110 from top to bottom, the second bending elastic piece 1553 of each movable claw 155 is firstly contacted with the bottom side of the growth crucible 110, the second bending elastic piece 1553 is downwards folded under the supporting of the growth crucible 110 to drive the first bending elastic piece 1551 to upwards fold and support the side wall of the growth crucible 110, after the growth crucible 110 is lowered in place, the first bending elastic piece 1551 can firmly support the outer side wall of the growth crucible 110, the limiting effect on the growth crucible 110 is realized in the horizontal direction, and the relative fixation between the growth crucible 110 and the placement table 153 is ensured. When the growth crucible 110 needs to be taken out, the growth crucible 110 only needs to be taken out upwards, at this time, the growth crucible 110 is separated from the second bending elastic sheet 1553, the first bending elastic sheet 1551 can be folded outwards under the supporting action of the side wall, and the second bending elastic sheet 1553 is driven to be folded upwards and separated from the side wall of the growth crucible 110, so that the growth crucible 110 is conveniently taken out.
It should be noted that, in this embodiment, the first bending elastic piece 1551 and the second bending elastic piece 1553 may be made of high temperature resistant metal or alloy and have a certain elasticity, so that the first bending elastic piece 1551 can be driven to abut against the side wall of the growth crucible 110 when the growth crucible 110 presses the second bending elastic piece 1553.
It should be noted that, in order to further enable the movable claw 155 to recover to the open state when the growth crucible 110 is removed from the placement table 153, in this embodiment, a torsion spring may be disposed on the rotating shaft 157, and the torsion spring may provide an elastic force for opening the movable claw 155, that is, in a natural state, the torsion spring may provide a certain elastic force, so that the first bending elastic piece 1551 is turned outwards, and the second bending elastic piece 1553 is turned upwards. Of course, the spring force provided by the torsion spring needs to be much less than the weight of the growth crucible 110 and greater than the weight of the first and second bending springs 1551 and 1553.
In this embodiment, the sealing cover 151 is further provided with a first gas pipe 1511 and a second gas pipe 1513, which are both in communication with the buffer chamber 190, the first gas pipe 1511 is used for introducing buffer gas into the buffer chamber 190, and the second gas pipe 1513 is used for extracting gas in the buffer chamber 190. Specifically, a first check valve 1515 is provided on the first gas pipe 1511, a second check valve 1517 is provided on the second gas pipe 1513, the first gas pipe 1511 is connected to an external gas source, so that the buffer chamber 190 can be filled with the buffer gas in one direction, and the second gas pipe 1513 is connected to an external evacuating device, so that the air in the buffer chamber 190 can be evacuated in one direction.
In this embodiment, the first check valve 1515 and the second check valve 1517 are opened alternatively, and can effectively prevent the reverse flow of the gas, so as to ensure the vacuumizing effect and the air supplying effect.
In this embodiment, the width of the buffer chamber 190 is greater than the width of the growth crucible 110, and the width of the buffer chamber 190 is less than 10 times the width of the growth crucible 110. Specifically, the width of the buffer chamber 190 is 1-10 times the width of the growth crucible 110, and preferably, the width of the buffer chamber 190 is 2 times the width of the growth crucible 110. In addition, the buffer chamber 190 also needs to be greater in height than the growth crucible 110 and seed carrier 130 so that the upper side is also spaced from the barrier enclosure 150.
The growth crucible 110 includes a crucible body 111 and a growth ring 113 disposed inside the crucible body 111, the crucible body 111 is used for placing silicon carbide powder 300, the seed crystal carrier 130 is disposed at the top end of the crucible body 111, one end of the growth ring 113 is connected to the crucible body 111, and the other end extends obliquely toward the seed crystal carrier 130 and is used for extending to the edge of the seed crystal 200. Wherein openings are formed at both ends of the growth ring 113, and the opening size of the end of the growth ring 113 near the seed carrier 130 is smaller than the opening size of the end of the growth ring 113 near the silicon carbide powder 300.
In this embodiment, a first sealing convex ring 115 is disposed at an inner edge of a top end of the crucible body 111, a second sealing convex ring 117 is disposed at an outer edge of a bottom end of the seed crystal carrier 130, and the first sealing convex ring 115 and the second sealing convex ring 117 are fastened to each other, so that a labyrinth sealing structure is formed between the top end of the crucible body 111 and the bottom end of the seed crystal carrier 130. Specifically, the second sealing convex ring 117 is convexly disposed at the bottom edge of the seed crystal carrier 130, and when in actual assembly, the seed crystal carrier 130 can be fastened to the crucible body 111, so that the first sealing convex ring 115 and the second sealing convex ring 117 are fastened to each other, thereby ensuring tightness between the seed crystal carrier 130 and the crucible body 111.
In actual assembly, the silicon carbide powder 300 may be first loaded into the growth crucible 110, then the seed crystal 200 is adhered to the seed crystal carrier 130, then the seed crystal carrier 130 is assembled on the growth crucible 110, then the assembled growth crucible 110 is loaded into the barrier cover body 150 through the placement opening, the sealing cover 151 is covered, and finally the insulation layer 170 is coated around the barrier cover body 150, so as to form the complete silicon carbide crystal growth thermal field device 100. After the assembly is completed, the second check valve 1517 may be opened, the air in the buffer chamber 190 may be drawn out by the second gas pipe, and then the first check valve 1515 may be opened, and the buffer gas may be introduced into the buffer chamber 190 by the first gas pipe 1511. And then the growth crucible 110 is heated by a heat source, such as a water-cooled induction coil, so that the temperature in the growth crucible 110 reaches 1800-2300 ℃, at this time, the silicon carbide powder 300 in the growth crucible 110 sublimates into gas, and flows from a high temperature region to a low temperature region along a temperature gradient, silicon carbide single crystals are deposited on the growth surface of the seed crystal 200, and a small amount of reaction gas escaping from the growth crucible 110 flows into the buffer cavity 190 for buffer dilution, and is blocked by the blocking cover 150, so that the reaction gas is prevented from corroding the external heat insulation layer 170, and the stability and repeatability of a thermal field are ensured.
In summary, in the thermal field device 100 for growing silicon carbide crystals provided in this embodiment, the seed crystal carrier 130 is disposed on the growth crucible 110 to fix the seed crystal 200, and the barrier cover 150 is disposed outside the growth crucible 110 and the seed crystal carrier 130, and the insulation layer 170 is disposed outside the barrier cover 150, where the inner sidewall of the barrier cover 150 is spaced from the outer sidewall of the growth crucible 110, so that the buffer cavity 190 is formed between the barrier cover 150 and the growth crucible 110, and the barrier cover 150 is used to block the gas in the buffer cavity 190 from contacting with the insulation layer 170. In actual growth, the growth crucible 110 is heated by an external heat source, silicon carbide powder 300 in the growth crucible 110 sublimates to form gas, and a small amount of reaction gas escaping from the growth crucible 110 is blocked by the blocking cover 150 due to the buffer cavity 190 and the blocking cover 150, so that the reaction gas is inhibited from corroding the external heat preservation layer 170, and the integrity of the heat preservation layer 170 can be ensured. Compared with the prior art, the silicon carbide crystal growth thermal field device 100 provided by the embodiment can effectively inhibit the corrosion of the gas to the heat preservation layer 170, ensure the integrity of the heat preservation layer 170, and further ensure the repeatability and stability of the internal thermal field, thereby ensuring the quality and performance of the silicon carbide crystal growth.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A silicon carbide crystal growth thermal field device, comprising:
the growth crucible is used for placing silicon carbide powder;
the seed crystal carrier is arranged on the growth crucible and used for fixing seed crystals;
the blocking cover body is covered outside the growth crucible and the seed crystal carrier;
the heat preservation layer is arranged outside the blocking cover body;
the inner side wall of the blocking cover body is spaced from the outer side wall of the growth crucible, so that a buffer cavity is formed between the blocking cover body and the growth crucible, and the blocking cover body is used for blocking gas in the buffer cavity from contacting with the heat insulation layer.
2. The silicon carbide crystal growth thermal field device according to claim 1, wherein the buffer chamber is filled with a buffer gas comprising at least one of argon, nitrogen, hydrogen, and helium.
3. A silicon carbide crystal growth thermal field device according to claim 2, wherein the gas pressure in the buffer chamber is between 1 and 800 mbar.
4. The silicon carbide crystal growth thermal field device according to claim 2, wherein the growth crucible is disposed in the barrier cover body, a placement opening is formed in the barrier cover body, and a sealing cover is movably disposed on the placement opening and is used for opening or closing the placement opening.
5. The silicon carbide crystal growth thermal field device according to claim 4, wherein the bottom wall of the shielding cover is further provided with a placement table, a fixing structure is provided on the placement table, and the growth crucible is placed on the placement table and detachably connected with the fixing structure.
6. The silicon carbide crystal growth thermal field device according to claim 5, wherein the fixing structure comprises a plurality of movable claws, the plurality of movable claws are circumferentially distributed on the placing table, and each movable claw is caught at a bottom edge of the growth crucible to fix the growth crucible on the placing table.
7. The silicon carbide crystal growth thermal field device according to claim 4, wherein the sealing cover is further provided with a first gas tube and a second gas tube which are both in communication with the buffer chamber, the first gas tube is used for introducing the buffer gas into the buffer chamber, and the second gas tube is used for pumping out the gas in the buffer chamber.
8. The silicon carbide crystal growth thermal field device according to claim 1, wherein the buffer chamber has a width greater than the width of the growth crucible and a width less than 10 times the width of the growth crucible.
9. The silicon carbide crystal growth thermal field device according to claim 1, wherein the growth crucible comprises a crucible body for holding the silicon carbide powder and a growth ring disposed inside the crucible body, wherein the seed carrier is disposed at a top end of the crucible body, one end of the growth ring is connected to the inside of the crucible body, and the other end of the growth ring extends obliquely toward the seed carrier and is configured to extend to an edge of the seed crystal.
10. The silicon carbide crystal growth thermal field device according to claim 9, wherein a first sealing collar is provided on an inner edge of the top end of the crucible body, a second sealing collar is provided on an outer edge of the bottom end of the seed carrier, and the first sealing collar and the second sealing collar are engaged with each other to form a labyrinth seal structure between the top end of the crucible body and the bottom end of the seed carrier.
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