CN214173409U - Embedded thin film sensor structure based on ceramic substrate - Google Patents
Embedded thin film sensor structure based on ceramic substrate Download PDFInfo
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- CN214173409U CN214173409U CN202120506072.9U CN202120506072U CN214173409U CN 214173409 U CN214173409 U CN 214173409U CN 202120506072 U CN202120506072 U CN 202120506072U CN 214173409 U CN214173409 U CN 214173409U
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Abstract
The utility model discloses an embedded film sensor structure based on ceramic substrate, including ceramic substrate and ceramic upper cover, set up the adhesive linkage on the ceramic substrate, set up the sensor circuit layer on the adhesive linkage, the thickness of ceramic upper cover is greater than 1 um. The utility model discloses embedded encapsulation of film sensor based on ceramic substrate imbeds the sensor in upper and lower two-layer pottery, has carried out complete protection to the sensor, can deal with various adverse conditions in the external environment well, is showing the life-span that has promoted film sensor; the ceramic upper cover is thick, has high strength and is not limited by the type of ceramic materials; and a stable and firm joint area is formed between the ceramic substrate and the ceramic upper cover through mutual diffusion among the middle layer, the ceramic substrate and the ceramic upper cover.
Description
Technical Field
The utility model relates to an embedded film sensor structure based on ceramic substrate belongs to film sensor technical field.
Background
With the industrial upgrading of industrial internet and intelligent manufacturing, the real-time monitoring of the manufacturing process becomes more and more important, on one hand, the product quality can be improved and the production efficiency can be improved by obtaining key process parameters in the manufacturing process, and meanwhile, problems can be found in advance and timely intervention can be carried out, so that the occurrence of serious accidents is avoided. The sensor plays an important role in acquiring data such as key process parameters, but the traditional sensor is difficult to approach a point to be measured due to large size, and even if the traditional sensor contacts the point to be measured in different installation modes, the traditional sensor has great damage to the original physical field, so that the detection authenticity is damaged; meanwhile, the traditional sensor has slow response and great hysteresis, so that the requirement of on-site real-time monitoring is difficult to meet.
The thin film sensor can provide higher spatial resolution and time resolution by virtue of the characteristics of small size and quick response, so that the field monitoring is more real and timely. However, the conventional silicon substrate-based thin film sensor is difficult to be applied to high temperature, high pressure and corrosive occasions due to the defects of brittleness, no high temperature resistance, no corrosion resistance and the like of the substrate material.
In order to solve the above problems, a thin film sensor based on a ceramic substrate has been developed, and in order to deal with the damages such as scratch, abrasion, etc. in the external environment, the sensor needs to be protected, and a ceramic protective layer is deposited on the sensor by using a Physical Vapor Deposition (PVD) or Chemical Vapor Deposition (CVD) process. However, due to the limitations of the process, the deposition efficiency is low, the deposited protective layer is thin, and the kinds of materials of the ceramic protective layer are limited, so that it is difficult to cope with various severe conditions.
SUMMERY OF THE UTILITY MODEL
In order to overcome the not enough of above-mentioned prior art, the utility model provides an embedded film sensor structure based on ceramic substrate, the ceramic protective layer material is thicker, intensity is higher to do not receive the restriction of ceramic material kind, solved above-mentioned problem well, thereby realized the normal use of film sensor in adverse circumstances.
In order to realize the technical purpose, the utility model discloses a technical scheme is: the utility model provides an embedded film sensor structure based on ceramic substrate, includes ceramic substrate and ceramic upper cover, sets up the adhesive linkage on the ceramic substrate, sets up sensor circuit layer on the adhesive linkage, and the ceramic upper cover sets up on sensor circuit layer, and thickness is greater than 1um, and the ceramic upper cover covers the part of sensor circuit layer except the pad.
The sensor circuit layer is embedded into the ceramic substrate and the ceramic upper cover, the sensor is completely protected by utilizing the connection between the ceramic substrate and the ceramic upper cover, various severe conditions in the external environment can be well coped with, and the service life of the thin film sensor is remarkably prolonged. The thickness of the ceramic upper cover is far higher than that of the ceramic upper cover prepared by the prior art, the strength is high, the ceramic upper cover is not limited by the types of ceramic materials, and the problem that the traditional ceramic protective layer is thin is solved.
As a specific design, an intermediate layer is arranged between the ceramic substrate and the ceramic upper cover and outside the sensor circuit layer, or the intermediate layer is arranged between the ceramic substrate and the ceramic upper cover and in the area covering the sensor circuit layer, and the intermediate layer does not cover the bonding pad of the sensor circuit layer.
The middle layer mainly has the function that when the subsequent ceramic upper cover is connected with the ceramic substrate, a firm joint area is easily formed between the ceramic substrate and the ceramic upper cover through mutual diffusion among the middle layer, the ceramic substrate and the ceramic upper cover; if there is a direct connection between the ceramic substrate and the ceramic top cover, no intermediate layer is required.
As a specific design, the middle layer is a metal middle layer, and a gap is reserved between the edge of the metal middle layer and the edge of the sensor circuit layer. And a stable and firm joint area is formed between the ceramic substrate and the ceramic upper cover through mutual diffusion among the middle layer, the ceramic substrate and the ceramic upper cover.
The intermediate layer is a ceramic intermediate layer, and the ceramic intermediate layer is positioned between the ceramic substrate and the ceramic upper cover and covers the sensor circuit layer except for the bonding pad.
Specifically, the bonding layer is a metal titanium layer or a chromium layer with the thickness of 5-100 nm.
As a specific design, the middle layer is a metal layer or a ceramic layer with the thickness of 0.05-500 um.
Preferably, the metal of the metal intermediate layer is cobalt or aluminum.
The preparation method of the embedded thin film sensor structure based on the ceramic substrate comprises the following steps:
step one, cleaning a ceramic substrate and a ceramic upper cover with acetone, isopropanol and deionized water, drying the surface with nitrogen, and heating and drying to finish the preparation of the substrate;
depositing a 5-100 nm thick metal titanium or chromium bonding layer on the ceramic substrate through photoetching, sputtering and stripping processes, and improving the bonding property between a subsequent sensor circuit layer and the ceramic substrate; the bonding layer and the sensor circuit layer have the same plane shape, so that short circuit of the sensor circuit is avoided;
depositing a sensor circuit layer on the bonding layer through photoetching, sputtering and stripping processes;
depositing a 0.05-500 um metal intermediate layer such as cobalt/aluminum and the like around the sensor circuit layer through photoetching, sputtering and stripping processes, or directly covering the area except the sensor circuit (including a bonding pad) on the ceramic substrate by using 0.05-500 um metal foil such as cobalt/aluminum and the like;
or depositing a 0.05-500 um ceramic intermediate layer such as aluminum oxide on the sensor circuit layer by photoetching, electron beam evaporation and stripping processes, wherein the intermediate layer covers the whole area including the sensor circuit (except a bonding pad) on the ceramic substrate;
and step five, covering the ceramic upper cover on the intermediate layer completed in the step four, wherein the ceramic upper cover does not cover the circuit pad of the sensor, applying pressure to the upper ceramic substrate, the lower ceramic substrate and the ceramic upper cover through solid-phase diffusion welding, heating the interface area, connecting the ceramic upper cover and the ceramic substrate together, and completing the embedded packaging of the sensor.
The utility model has the beneficial technical effects that:
the thin film sensor is embedded and packaged based on the ceramic substrate, the sensor is embedded into the upper layer of ceramic and the lower layer of ceramic, the sensor is completely protected, various severe conditions in the external environment can be well met, and the service life of the thin film sensor is remarkably prolonged;
the ceramic upper cover is thick, has high strength and is not limited by the type of ceramic materials;
and a stable and firm joint area is formed between the ceramic substrate and the ceramic upper cover through mutual diffusion among the middle layer, the ceramic substrate and the ceramic upper cover.
Drawings
The present invention will be further explained with reference to the accompanying drawings.
Fig. 1 is a schematic structural view of a thin film sensor of a metal intermediate layer according to the present invention;
FIG. 2 is a schematic structural view of a thin film sensor of the ceramic intermediate layer according to the present invention;
fig. 3 is a schematic top view of the structure of the present invention.
In the figure: 1. ceramic substrate, 2, adhesive layer, 3, sensor circuit layer, 4, intermediate layer, 5, ceramic upper cover, 6 and bonding pad.
Detailed Description
Example 1
The utility model provides an embedded film sensor structure based on ceramic substrate, includes ceramic substrate 1 and ceramic upper cover 5, sets up adhesive linkage 2 on ceramic substrate 1, sets up sensor circuit layer 3 on adhesive linkage 2, imbeds ceramic substrate 1 and ceramic upper cover 5 with sensor circuit layer 3 in, has carried out complete protection to the sensor, can deal with various adverse conditions among the external environment well, is showing the life-span that has promoted film sensor.
The thickness of the ceramic upper cover 5 is 1um larger. The ceramic upper cover is thick, the strength is high, the ceramic upper cover is not limited by the types of ceramic materials, and the problem that the traditional ceramic protective layer is thin is solved.
An intermediate layer 4 is arranged between the ceramic substrate 1 and the ceramic upper cover 5 and outside the sensor circuit layer 3 or covering the area except the bonding pad of the sensor circuit layer.
Example 2
An intermediate layer is arranged between the ceramic substrate 1 and the ceramic upper cover 5 and outside the sensor circuit layer 3 or covering the area except the bonding pad of the sensor circuit layer.
The middle layer 4 is a metal middle layer or a ceramic middle layer, wherein a gap is reserved between the edge of the metal middle layer and the edge of the sensor circuit layer. And a stable and firm joint area is formed between the ceramic substrate and the ceramic upper cover through mutual diffusion among the middle layer, the ceramic substrate and the ceramic upper cover.
The bonding layer 2 is a metal titanium layer or a chromium layer with the thickness of 5-100 nm.
Example 3
As shown in fig. 1, the intermediate layer 4 is a metal intermediate layer, and a safety gap is left between the edge of the intermediate layer and the edge of the sensor circuit layer to prevent short circuit. The middle layer is a cobalt layer and an aluminum layer with the thickness of 0.05-500 um.
The preparation method comprises the following steps:
firstly, cleaning a ceramic substrate and a ceramic upper cover, drying the surfaces of the ceramic substrate and the ceramic upper cover by blowing, and heating and drying to finish substrate preparation;
depositing a 5-100 nm thick metal titanium or chromium bonding layer on the ceramic substrate through photoetching, sputtering and stripping processes, and improving the bonding property between a subsequent sensor circuit layer and the ceramic substrate; the bonding layer and the sensor circuit layer have the same plane shape, so that short circuit of the sensor circuit is avoided;
depositing a sensor circuit layer on the metal titanium (Ti)/chromium (Cr) bonding layer through photoetching, sputtering, stripping and other processes;
depositing a 0.05-500 um middle layer, such as cobalt (Co)/aluminum (Al) and the like, around the sensor circuit layer through photoetching, sputtering and stripping processes, wherein the middle layer covers the area of the ceramic substrate except the sensor circuit (including the bonding pad 6);
and step five, covering the ceramic upper cover on the intermediate layer completed in the step four, wherein the ceramic upper cover does not cover the circuit pad of the sensor, applying pressure to the upper ceramic substrate, the lower ceramic substrate and the ceramic upper cover through solid-phase diffusion welding, heating the interface area, and connecting the ceramic upper cover and the ceramic substrate for a certain time to complete the embedded packaging of the sensor.
The middle layer mainly has the main function that when the subsequent ceramic upper cover is connected with the ceramic substrate, a firm joint area is easily formed between the ceramic substrate and the ceramic upper cover through mutual diffusion among the middle layer, the ceramic substrate and the ceramic upper cover; if there is a direct connection between the ceramic substrate and the ceramic top cover, no intermediate layer is required.
Example 4
The difference from the embodiment 3 is that, as shown in fig. 2, the intermediate layer 4 is an alumina layer with a thickness of 0.05-500 um. In the fourth step, a 0.05-500 um aluminum oxide intermediate layer is deposited on the sensor circuit layer through the processes of photoetching, electron beam evaporation (E-beam evaporation), stripping and the like, and the intermediate layer covers the whole area including the sensor circuit (except the bonding pad) on the ceramic substrate.
Fig. 3 is a top view of fig. 1 and 2.
Above-mentioned embodiment is only as right the utility model discloses technical scheme's explanation can not be as right the utility model discloses technical scheme's restriction, all are in the utility model discloses simple improvement on the basis all belongs to the utility model discloses a protection scope.
Claims (7)
1. An embedded thin film sensor structure based on a ceramic substrate, characterized in that: including ceramic substrate and ceramic upper cover, set up the adhesive linkage on the ceramic substrate, set up sensor circuit layer on the adhesive linkage, the ceramic upper cover sets up on sensor circuit layer, and thickness is greater than 1um, and the ceramic upper cover covers the part of sensor circuit layer except that the pad.
2. The ceramic substrate-based embedded thin film sensor structure of claim 1, wherein: and an intermediate layer is arranged between the ceramic substrate and the ceramic upper cover and in the area outside the sensor circuit layer, or is arranged between the ceramic substrate and the ceramic upper cover and in the area covering the sensor circuit layer, and the intermediate layer does not cover the bonding pad of the sensor circuit layer.
3. The ceramic substrate-based embedded thin film sensor structure of claim 2, wherein: the middle layer is a metal middle layer, and a gap is reserved between the edge of the metal middle layer and the edge of the sensor circuit layer; and a stable and firm joint area is formed between the ceramic substrate and the ceramic upper cover through mutual diffusion among the middle layer, the ceramic substrate and the ceramic upper cover.
4. The ceramic substrate-based embedded thin film sensor structure of claim 2, wherein: the middle layer is a ceramic middle layer, and the ceramic middle layer is positioned between the ceramic substrate and the ceramic upper cover and covers the area of the sensor circuit layer except the bonding pad.
5. The ceramic substrate-based embedded thin film sensor structure of claim 1, wherein: the bonding layer is a metal titanium layer or a chromium layer with the thickness of 5-100 nm.
6. The ceramic substrate-based embedded thin film sensor structure of claim 2, wherein: the middle layer is a metal layer or a ceramic layer with the thickness of 0.05-500 um.
7. The ceramic substrate-based embedded thin film sensor structure of claim 6, wherein: the metal layer of the middle layer is a cobalt layer or an aluminum layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120506072.9U CN214173409U (en) | 2021-03-10 | 2021-03-10 | Embedded thin film sensor structure based on ceramic substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120506072.9U CN214173409U (en) | 2021-03-10 | 2021-03-10 | Embedded thin film sensor structure based on ceramic substrate |
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| CN214173409U true CN214173409U (en) | 2021-09-10 |
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| CN202120506072.9U Active CN214173409U (en) | 2021-03-10 | 2021-03-10 | Embedded thin film sensor structure based on ceramic substrate |
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2021
- 2021-03-10 CN CN202120506072.9U patent/CN214173409U/en active Active
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