CN110429060A - A kind of method making air bridges and its structure and application - Google Patents
A kind of method making air bridges and its structure and application Download PDFInfo
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- CN110429060A CN110429060A CN201910696634.8A CN201910696634A CN110429060A CN 110429060 A CN110429060 A CN 110429060A CN 201910696634 A CN201910696634 A CN 201910696634A CN 110429060 A CN110429060 A CN 110429060A
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- air bridges
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- photoresist
- protective layer
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/7688—Filling of holes, grooves or trenches, e.g. vias, with conductive material by deposition over sacrificial masking layer, e.g. lift-off
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a kind of methods for making air bridges, comprising the following steps: step 1: the first photoresist layer, photoetching is coated on wafer, development makes air bridges pier pattern；Step 2: protective layer is formed on the first photoresist layer；Step 3: being coated with the second photoresist layer, photoetching on the protection layer, and development forms chamfering pattern, makes air bridges bridge floor figure；Step 4: evaporation metal；Step 5: metal-stripping is carried out according to air bridges figure, the second photoresist layer and the first photoresist layer is removed, ultimately forms air bridges.The invention also discloses a kind of structure of air bridges, including bridge floor and bridge pier, bridge pier surface covers a protective layer, and the protective layer is metal material, specially titanium tungsten, nickel vanadium or titanium nitride.The present invention not only can solve golden problem of rough, but also can obtain more preferably air bridges pattern, reduce the damage caused by device in manufacturing process.
Description
Technical field
The present invention relates to the technical field of semiconductor devices manufacture more particularly to a kind of method for making air bridges and its knots
Structure and application.
Background technique
With the raising of semiconductor device technology level and integrated level, circuit structure becomes increasingly complex, the connection in circuit
Also it becomes more and more important, thus the production of air bridges is also more and more important.
Currently, there are two ways to commonly making air bridges, first is that using manufacturing air bridge by composite glue electric-plating, air bridges
It is formed by electroplating technology, but electroplating technology has that gold is coarse, may cause the bad problem of packaging and routing, will affect
The yield of product.Second is that doing the sacrificial layer of air-bridge process using photoresist, sacrificial layer is toasted, such as patent
Disclosed in 200710064859.9 it is a kind of using photosensitive glue-line production air bridges method, to formed air bridges support substrate into
Row baking keeps the corner for sacrificing glue (sacrificial layer) round and smooth and solidifies, and still, because baking is will to sacrifice glue integrally to harden, is easy
It is to be easy to produce very much abnormal defect, to cause to damage to device so that sacrificing glue deformation.Moreover, photoresist is resistant to high temperatures
Limited capacity, temperature is excessively high when high-temperature baking will cause carbonization, cause subsequent sacrificial layer to go when removing unclean, if baking
Temperature is not high enough, and sacrificial layer will photosensitive and developed liquid erosion table when arriving subsequent production metal electrode graph exposure step
Air bridges metal lead wire uneven surface is caused in face.
Therefore, the present inventor makes further research this, develops a kind of method for making air bridges and its structure and answers
With thus this case generates.
Summary of the invention
Technical problem to be solved by the present invention lies in a kind of method for making air bridges and its structure and application is provided, no
But it can solve golden problem of rough, but also more preferably air bridges pattern can be obtained, reduce in manufacturing process and device is caused
Damage.
In order to solve the above technical problems, the technical solution of the invention is as follows:
A method of making air bridges, comprising the following steps:
Step 1: being coated with the first photoresist layer, photoetching on wafer, and development makes air bridges pier pattern；
Step 2: protective layer is formed on the first photoresist layer；
Step 3: being coated with the second photoresist layer, photoetching on the protection layer, and development forms chamfering pattern, makes air bridges bridge floor figure
Shape；
Step 4: in evaporation metal；
Step 5: metal-stripping is carried out according to air bridges figure, the second photoresist layer and the first photoresist layer is removed, ultimately forms
Air bridges.
Further, in step 2, the protective layer is metal material.
Further, metal material is specially titanium tungsten, nickel vanadium or titanium nitride.
Further, in step 5, the metal removal on the second photoresist layer reveals after then removing the second photoresist layer
The protective layer of part out, and by wet etching, remove partial protection layer and the first photoresist layer.
Further, in step 5, the metal removal on the second photoresist layer reveals after then removing the second photoresist layer
The protective layer of part out, and by dry etching, partial protection layer is removed, the first photoresist layer is finally removed.
Further, in step 2, ion bombardment solidification, the first photoresist layer are carried out with gas on the first photoresist layer
Surface hardened layer forms protective layer.
Further, the gas is inert gas.
Further, inert gas is specially SF6、N2, one of Ar or a variety of.
Further, in step 5, by the metal removal on the second photoresist layer, the second photoresist layer is then removed, most
After remove the first photoresist layer.
Further, the first photoresist layer and the second photoresist layer are same photoresist or are photoresist not of the same race.
A kind of structure of air bridges, including bridge floor and bridge pier, bridge pier surface cover a protective layer, and the protective layer is gold
Belong to material, specially titanium tungsten, nickel vanadium or titanium nitride.
A kind of structure of air bridges, the protective layer are located at bridge pier bottom.
A kind of application of air bridges, the air bridges are applied on power device.
The invention has the following advantages that
1, the present invention uses protective layer structure between the first photoresist layer and the second photoresist layer, can protect the first photoetching
The pattern of glue-line then makes air bridges pattern more excellent, can reduce abnormal defect and generate；
2, using the structure of protective layer, it may not be necessary to consider the problems of to dissolve each other between the first photoresist layer and the second photoresist layer,
Cost is reduced, technique is more simple；
3, using metal evaporation, it can solve the bad problem of the coarse caused routing of electroplating gold, improve the yield of product.
Detailed description of the invention
Fig. 1 is flow diagram of the invention；
Fig. 2 is the schematic diagram of the embodiment of the present invention one；
Fig. 3 is the schematic diagram of the embodiment of the present invention two.
Label declaration
12 first photoresist layer of front layer metal of wafer, 3 protective layer 4
Second photoresist layer, 5 metal, 6 bridge floor, 61 bridge pier 62.
Specific embodiment
The invention will be further described in the following with reference to the drawings and specific embodiments.As shown in Figure 1, a kind of production air bridges
Method, comprising the following steps: step 1: being coated with the first photoresist layer on wafer, photoetching, and development makes air bridges bridge pier
Figure；Step 2: protective layer is formed on the first photoresist layer；Step 3: it is coated with the second photoresist layer, light on the protection layer
It carves, development forms chamfering pattern, makes air bridges bridge floor figure；Step 4: in evaporation metal；Step 5: according to air bridges figure
Shape carries out metal-stripping, removes the second photoresist layer and the first photoresist layer, ultimately forms air bridges.First photoresist layer and
Two photoresist layers are same photoresist or are photoresist not of the same race, can be selected according to different actual conditions.
As shown in Fig. 2, be the first embodiment of the present invention, a method of making air bridges, comprising the following steps: step
One: front layer metal 2 being deposited on wafer 1, the first photoresist layer 3, in the present embodiment, the first photoresist are coated on wafer 1
AZ4620, photoetching are selected, development makes air bridges pier pattern；Step 2: forming protective layer 4 on the first photoresist layer 3,
The protective layer 4 is with the metal material of protection 3 effect of the first photoresist layer, and metal material is specially titanium in the present embodiment
Tungsten；Step 3: being coated with the second photoresist layer 5 on protective layer 4, and in the present embodiment, the second photoresist selects AZ4620, light
It carves, development forms chamfering pattern, makes air bridges bridge floor figure；Step 4: in evaporation metal 6；Step 5: according to air bridges
Figure removes the metal 6 on the second photoresist layer 5, then removes the protective layer 4 of exposed portion after the second photoresist layer 5, and
By wet etching, partial protection layer 4 and the first photoresist layer 3 are removed, air bridges are ultimately formed.The air bridges, including bridge
Face 61 and bridge pier 62 cover one layer of titanium tungsten (i.e. protective layer 4) on 621 surface of the bottom of bridge pier 62.Because of the characteristic of wet etching,
4 major part of protective layer positioned at 62 surface of bridge pier will follow the first photoresist layer 3 to be removed together, only in 62 bottom of bridge pier
Protective layer 4 at 621 is retained.
As shown in figure 3, be the second embodiment of the present invention, a method of making air bridges, comprising the following steps: step
One: depositing front layer metal 2 on wafer 1, the first photoresist layer 3, in the present embodiment, the first photoresist are coated on wafer 1
SPR220, photoetching are selected, development makes air bridges pier pattern；Step 2: forming protective layer 4 on the first photoresist layer 3,
The protective layer 4 is with the metal material of protection 3 effect of the first photoresist layer, and metal material is specially nitrogen in the present embodiment
Change titanium；Step 3: being coated with the second photoresist layer 5 on protective layer 4, and in the present embodiment, the second photoresist selects AZ4620, light
It carves, development forms chamfering pattern, makes air bridges bridge floor figure；Step 4: in evaporation metal 6；Step 5: according to air bridges
Figure removes the metal 6 on the second photoresist layer 5, then removes the protective layer 4 of exposed portion after the second photoresist layer 5, and
By dry etching, partial protection layer 4 is removed, the first photoresist layer 3 is finally removed, ultimately forms air bridges.The air bridges,
Including bridge floor 61 and bridge pier 62, one layer of titanium nitride (i.e. protective layer 4) is covered on the surface of bridge pier 62.Because of the characteristic of dry etching,
Protective layer 4 positioned at 62 surface of bridge pier will be retained, and will be removed by the protective layer 4 that bridge pier 62 covers.
Protective layer 4 is using metal material to protect the first photoresist layer 3, on the one hand, is selecting the second photoresist layer 5
When, it can not have to consider the problem of dissolving each other between photoresist, reduce production cost；On the other hand, so that the first photoresist layer 3
The making technology of removal is more simple, reduces photoresist removal difficulty, reduces the cost of removing photoresistance.
Meanwhile the present invention can solve the bad problem of the coarse caused routing of electroplating gold by the way of evaporation metal 6,
Improve the yield of product.
In another embodiment of the invention, a method of making air bridges, comprising the following steps: step 1: in crystalline substance
Front layer metal 2 is made on circle 1, the first photoresist layer 3, photoetching are coated on wafer 1, and development makes air bridges pier pattern；Step
Rapid two: carrying out ion bombardment solidification with gas on the first photoresist layer 3,3 Surface hardened layer of the first photoresist layer forms protective layer
4；Step 3: being coated with the second photoresist layer 5, photoetching on the protection layer, and development forms chamfering pattern, makes air bridges bridge floor figure
Shape；Step 4: in evaporation metal 6；Step 5: the metal 6 on the second photoresist layer 5 is removed according to air bridges figure, then
The second photoresist layer 5 is removed, the first photoresist layer 3 is finally removed, ultimately forms air bridges.
In the present embodiment, it because only carrying out gas hardening processing on the surface of the first photoresist layer 3, avoids existing
It is led to the problem of in technology because of whole hardening deforming, it is possible to reduce abnormal defect, reduction cause to damage to device.
Further, the gas is inert gas, and inert gas is specially SF6、N2, one of Ar or a variety of.Indifferent gas
Depending on the selection of body can be according to device property to be prepared be needed, the applicable different power device of different gas.
A kind of structure of air bridges, including bridge floor 61 and bridge pier 62,62 surface of bridge pier cover a protective layer 4, the guarantor
Sheath 4 is metal material, specially titanium tungsten (TiW), nickel vanadium (NiV) or titanium nitride (TiN).
A kind of structure of air bridges, the protective layer 4 are located at 62 bottom 621 of bridge pier.
The invention also discloses a kind of applications of air bridges, and the air bridges are applied on power device, widely applicable.
The foregoing is only a preferred embodiment of the present invention, but the design concept of the present invention is not limited to this,
Anyone skilled in the art in the technical scope disclosed by the present invention, using this design carries out the present invention non-
Substantive change belongs to the behavior for invading the scope of the present invention.
Claims (13)
1. a kind of method for making air bridges, it is characterised in that: the following steps are included:
Step 1: being coated with the first photoresist layer, photoetching on wafer, and development makes air bridges pier pattern；
Step 2: protective layer is formed on the first photoresist layer；
Step 3: being coated with the second photoresist layer, photoetching on the protection layer, and development forms chamfering pattern, makes air bridges bridge floor figure
Shape；
Step 4: evaporation metal；
Step 5: metal-stripping is carried out according to air bridges figure, the second photoresist layer and the first photoresist layer is removed, ultimately forms
Air bridges.
2. a kind of method for making air bridges according to claim 1, it is characterised in that: in step 2, the protection
Layer is metal material.
3. a kind of method for making air bridges according to claim 2, it is characterised in that: metal material be specially titanium tungsten,
Nickel vanadium or titanium nitride.
4. a kind of method for making air bridges according to claim 2, it is characterised in that: in step 5, by the second light
Metal removal on photoresist layer then removes the protective layer of exposed portion after the second photoresist layer, and passes through wet etching, removal
Partial protection layer and the first photoresist layer.
5. a kind of method for making air bridges according to claim 2, it is characterised in that: in step 5, by the second light
Metal removal on photoresist layer then removes the protective layer of exposed portion after the second photoresist layer, and passes through dry etching, removal
Partial protection layer finally removes the first photoresist layer.
6. a kind of method for making air bridges according to claim 1, it is characterised in that: in step 2, in the first light
Ion bombardment solidification is carried out with gas on photoresist layer, the first photoresist layer Surface hardened layer forms protective layer.
7. a kind of method for making air bridges according to claim 6, it is characterised in that: the gas is inert gas.
8. a kind of method for making air bridges according to claim 7, it is characterised in that: inert gas is specially SF6、N2、
One of Ar or a variety of.
9. a kind of method for making air bridges according to claim 6, it is characterised in that: in step 5, by the second light
Metal removal on photoresist layer, then removes the second photoresist layer, finally removes the first photoresist layer.
10. a kind of method for making air bridges according to claim 1, it is characterised in that: the first photoresist layer and second
Photoresist layer is same photoresist or is photoresist not of the same race.
11. the structure that one kind prepares air bridges method according to claim 1, it is characterised in that: including bridge floor and bridge pier, bridge
Pier surface covers a protective layer, and the protective layer is metal material, specially titanium tungsten, nickel vanadium or titanium nitride.
12. a kind of structure of air bridges according to claim 11, it is characterised in that: the protective layer is located at bridge pier bottom
Portion.
13. a kind of application of air bridges according to claim 11, it is characterised in that: the air bridges are applied in power device
On.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910696634.8A CN110429060A (en) | 2019-07-30 | 2019-07-30 | A kind of method making air bridges and its structure and application |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910696634.8A CN110429060A (en) | 2019-07-30 | 2019-07-30 | A kind of method making air bridges and its structure and application |
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| CN110429060A true CN110429060A (en) | 2019-11-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115700217A (en) * | 2021-07-21 | 2023-02-07 | 合肥本源量子计算科技有限责任公司 | Preparation method of air bridge and superconducting quantum device |
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|---|---|---|---|---|
| EP0501407A1 (en) * | 1991-02-25 | 1992-09-02 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit having wirings |
| CN1532632A (en) * | 2003-03-21 | 2004-09-29 | 旺宏电子股份有限公司 | Method for forming double layer photoresist and its use |
| CN101561628A (en) * | 2008-04-16 | 2009-10-21 | 中国科学院微电子研究所 | Method for manufacturing air bridge |
| CN101718801A (en) * | 2009-11-27 | 2010-06-02 | 中北大学 | Micro-accelerometer based on high electron mobility transistor (HEMT) |
| US20130056875A1 (en) * | 2011-09-01 | 2013-03-07 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing the same |
-
2019
- 2019-07-30 CN CN201910696634.8A patent/CN110429060A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0501407A1 (en) * | 1991-02-25 | 1992-09-02 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit having wirings |
| CN1532632A (en) * | 2003-03-21 | 2004-09-29 | 旺宏电子股份有限公司 | Method for forming double layer photoresist and its use |
| CN101561628A (en) * | 2008-04-16 | 2009-10-21 | 中国科学院微电子研究所 | Method for manufacturing air bridge |
| CN101718801A (en) * | 2009-11-27 | 2010-06-02 | 中北大学 | Micro-accelerometer based on high electron mobility transistor (HEMT) |
| US20130056875A1 (en) * | 2011-09-01 | 2013-03-07 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115700217A (en) * | 2021-07-21 | 2023-02-07 | 合肥本源量子计算科技有限责任公司 | Preparation method of air bridge and superconducting quantum device |
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Application publication date: 20191108 |