CN115700217A - Preparation method of air bridge and superconducting quantum device - Google Patents
Preparation method of air bridge and superconducting quantum device Download PDFInfo
- Publication number
- CN115700217A CN115700217A CN202110823371.XA CN202110823371A CN115700217A CN 115700217 A CN115700217 A CN 115700217A CN 202110823371 A CN202110823371 A CN 202110823371A CN 115700217 A CN115700217 A CN 115700217A
- Authority
- CN
- China
- Prior art keywords
- layer
- bridge
- sub
- etching
- air bridge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 100
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000007788 liquid Substances 0.000 claims abstract description 27
- 238000005260 corrosion Methods 0.000 claims abstract description 10
- 230000007797 corrosion Effects 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims 1
- 239000000243 solution Substances 0.000 description 34
- 230000008569 process Effects 0.000 description 17
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 239000012086 standard solution Substances 0.000 description 6
- 239000011259 mixed solution Substances 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Abstract
The application discloses a preparation method of an air bridge, belongs to the field of quantum information, and particularly relates to the technical field of quantum computing. The method comprises the following steps: providing a substrate formed with an epitaxial layer, wherein the epitaxial layer comprises a first sub-layer and a second sub-layer which are separated; forming a bridge support layer between the first sublayer and the second sublayer; forming a metal layer on the surface of the substrate on one side of the bridge support layer, wherein the metal layer comprises an air bridge which covers the bridge support layer and is connected with the first sub-layer and the second sub-layer; forming a resist layer covering the air bridge; etching and removing the exposed metal layer by using first etching liquid and second etching liquid in sequence, wherein the concentration of the second etching liquid is less than that of the first etching liquid; and removing the corrosion resistant layer and the bridge supporting layer to obtain the air bridge. The scheme can prepare the air bridge connecting the separated first sublayer and the second sublayer, and the epitaxial layer is not easily damaged.
Description
Technical Field
The application belongs to the field of quantum information, particularly relates to the technical field of quantum computing, and particularly relates to a preparation method of an air bridge and a superconducting quantum device.
Background
With the continuous reduction in the size and increase in the integration density of components integrated on a quantum chip, the wiring strategy of the quantum chip has become a very critical issue. The air bridge is a suspended structure capable of connecting two or more devices, and provides an alternative for realizing flexible wiring.
However, when the air bridge is formed on the epitaxial layer of the substrate, a metal deposition process is usually required to form an air bridge pattern, and then the residual metal outside the air bridge pattern is removed by etching, and the epitaxial layer is easily damaged in the process of removing the residual metal on the epitaxial layer by etching in the preparation process.
Summary of the invention
The application aims to provide a preparation method of an air bridge and a superconducting quantum device, so as to solve the defects in the prior art, and the air bridge can accurately control an etching end point in the process of preparing the air bridge and is not easy to damage and influence an epitaxial layer.
One aspect of the present invention provides a method for preparing an air bridge, comprising:
providing a substrate formed with an epitaxial layer, wherein the epitaxial layer comprises a first sub-layer and a second sub-layer which are separated;
forming a bridge support layer between the first sublayer and the second sublayer;
forming a metal layer on the surface of the substrate on one side of the bridge support layer, wherein the metal layer comprises an air bridge which covers the bridge support layer and is connected with the first sub-layer and the second sub-layer;
forming a corrosion resistant layer to cover the air bridge;
etching and removing the exposed metal layer by using first etching liquid and second etching liquid in sequence, wherein the concentration of the second etching liquid is less than that of the first etching liquid;
and removing the corrosion resistant layer and the bridge supporting layer to obtain the air bridge.
In some embodiments, the step of forming a bridge support between the first and second sub-layers comprises:
coating photoresist on the epitaxial layer to obtain a photoresist layer;
patterning the photoresist layer to obtain the bridge support layer between the first sub-layer and the second sub-layer.
In some embodiments, shielding layers are formed on two sides of the bridge support layer, a first window for exposing a portion of the first sub-layer and a second window for exposing a portion of the second sub-layer are defined between the bridge support layer and the shielding layers, the first window is used for defining a connection end for forming the air bridge and the first sub-layer, and the second window is used for defining a connection end for forming the air bridge and the second sub-layer.
In some embodiments, the first window and the second window have a cross-sectional size of no more than 15um x 15um.
In some embodiments, the height of the barrier layer is greater than the height of the bridge support layer.
In some embodiments, before the step of forming the metal layer on the surface of the substrate on the side of the bridge support layer, the method further includes: filleting corners of the bridge support layer.
In some embodiments, the epitaxial layer and the metal layer are of the same superconducting metal material.
In some embodiments, the epitaxial layer and the metal layer are both aluminum.
In some embodiments, the step of removing the exposed metal layer by sequentially using the first etching solution and the second etching solution includes: etching and removing the exposed first thickness part of the metal layer by using first etching liquid; etching and removing the second thickness part of the exposed metal layer by using second etching liquid; wherein the first thickness portion is 50% -80% of the thickness of the metal layer, and the second thickness portion is 20% -50% of the thickness of the metal layer.
Another aspect of the present invention provides a superconducting quantum device including an air bridge prepared according to the preparation method.
Compared with the prior art, the scheme of the invention is that a bridge supporting layer is formed between a first sublayer and a second sublayer on a substrate on which an epitaxial layer comprising the first sublayer and the second sublayer which are separated is formed; then, forming a metal layer on the surface of the substrate on one side of the bridge support layer, wherein the metal layer comprises an air bridge which covers the bridge support layer and connects the first sublayer and the second sublayer; then forming a corrosion resistant layer to cover the air bridge; etching and removing the exposed metal layer by sequentially using first etching liquid and second etching liquid, wherein the concentration of the second etching liquid is less than that of the first etching liquid; and finally, removing the etching resistant layer and the bridge supporting layer to obtain the air bridge, namely preparing the air bridge connecting the separated first sublayer and the second sublayer, wherein in the embodiment, a part of the exposed metal layer is etched and removed by using first etching liquid, and then the rest part of the exposed metal layer is etched and removed by using second etching liquid with the concentration smaller than that of the first etching liquid, so that when the residual metal on the epitaxial layer is removed, the etching progress is controllable, the over-etching is not easy to occur, and the damage to the epitaxial layer can be avoided.
Drawings
Fig. 1 is a schematic structural diagram of a substrate according to an embodiment of the present disclosure;
FIG. 2 is a schematic flow chart illustrating steps of a method for manufacturing an air bridge according to an embodiment of the present disclosure;
FIG. 3 is a flow chart of a method for manufacturing an air bridge according to an embodiment of the present disclosure;
fig. 4 is a schematic flow chart illustrating steps of another method for manufacturing an air bridge according to an embodiment of the present disclosure.
Description of reference numerals:
1-substrate, 2-epitaxial layer, 3-photoresist layer, 4-metal layer, 5-resist layer,
21-first sublayer, 22-second sublayer, 31-bridge support layer, 32-barrier layer, 33-first window, 34-second window, 41-air bridge.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present application clearer, the embodiments of the present application will be described in detail below with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that in the examples of the present application, numerous technical details are set forth in order to provide a better understanding of the present application. However, the technical solutions claimed in the present application can be implemented without these technical details and various changes and modifications based on the following embodiments. The following embodiments are divided for convenience of description, and should not constitute any limitation to the specific implementation manner of the present application, and the embodiments may be mutually incorporated and referred to without contradiction.
It should be noted that the terms "comprises" and "comprising," and any variations thereof, in the description and claims of this application and the above-described drawings, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In addition, it will be understood that when a layer (or film), region, pattern, or structure is referred to as being "on" a substrate, layer (or film), region, and/or pattern, it can be directly on the other layer or substrate, and/or intervening layers may also be present. In addition, it will be understood that when a layer is referred to as being "under" another layer, it can be directly under the other layer, and/or one or more intervening layers may also be present. In addition, references to "on" and "under" layers may be made based on the drawings.
Fig. 1 is a schematic structural diagram of a coplanar waveguide transmission line according to an embodiment of the present application, schematically illustrating a three-dimensional structure of a section of the coplanar waveguide transmission line on a quantum chip.
In the quantum chip of superconductive system, the substrate has reading signal line, reading resonant cavity, quantum bit regulating signal line, ground and other structures formed on it, and the reading signal line, the reading resonant cavity and the quantum bit regulating signal line are all constituted by coplanar waveguide transmission line. For example, referring to fig. 1, an epitaxial layer 2 formed on a substrate 1 is divided by a coplanar waveguide transmission line and other structures to form a first sublayer 21 and a second sublayer 22 which are divided, and the division causes the first sublayer 21 and the second sublayer 22 on both sides of the transmission line to have a potential difference when a signal is input to the quantum chip, so that a parasitic slot line mode is excited and coherence of a qubit is affected. The air bridge is a three-dimensional metal wire which can connect the first sublayer 21 and the second sublayer 22 divided on a two-dimensional plane to balance the potential.
In the related art, when the air bridge is prepared on the epitaxial layer 2 of the substrate 1, a metal deposition process is often required to be performed to form the air bridge connecting the first sub-layer 21 and the second sub-layer 22, and then etching is performed to remove residual metal outside the air bridge, and when the residual metal on the epitaxial layer is removed, the epitaxial layer is easily damaged.
Fig. 2 a to f are schematic flow charts illustrating steps of a method for manufacturing an air bridge according to an embodiment of the present disclosure.
Fig. 3 is a flowchart of a method for manufacturing an air bridge according to an embodiment of the present disclosure.
Fig. 4 a to F are schematic flow charts illustrating steps of another method for manufacturing an air bridge according to an embodiment of the present disclosure.
It should be noted that fig. 2 and fig. 4 are schematic diagrams of MN cross-sections in the flow of steps of the method for preparing an air bridge according to the embodiment of the present invention.
Referring to fig. 2, fig. 3 and fig. 4 in combination with fig. 1, an embodiment of the present application provides a method for preparing an air bridge, including steps S100 to S600, where:
s100, providing a substrate 1 formed with an epitaxial layer 2, where the epitaxial layer 2 includes a first sub-layer 21 and a second sub-layer 22 separated, for example, the first sub-layer 21 and the second sub-layer 22 are separated by a coplanar waveguide transmission line, and in a specific implementation, the first sub-layer 21 and the second sub-layer 22 are not limited thereto, for example, the first sub-layer 21 and the second sub-layer 22 may also be separated by a slot or other components, and it is understood that the epitaxial layer 2 may be formed on the substrate 1 by using a deposition, plating, or other processes.
S200, forming a bridge supporting layer 31 between the first sub-layer 21 and the second sub-layer 22, it is understood that in this step, the bridge supporting layer 31 is used to support a structure defining an air bridge, the height and width of the bridge supporting layer 31 are adjusted according to the design size of the air bridge, and the material of the bridge supporting layer 31 may be selected according to the requirement, for example, may be SiO 2 Photoresist (e.g., S1813 photoresist, etc.), and the like.
S300, forming a metal layer 4 on a surface of the substrate 1 on one side of the bridge support layer 31, wherein the metal layer 4 includes an air bridge 41 covering the bridge support layer 31 and connecting the first sublayer 21 and the second sublayer 22, and it is understood that the air bridge 41 includes an air bridge deck on the surface of the bridge support layer 31 and an air bridge abutment respectively connecting the air bridge deck and the first sublayer 21 and the second sublayer 22, illustratively, a metal material may be deposited on the substrate 1 by using a metal deposition process, the surface of the substrate 1 on one side of the bridge support layer 31 forms the metal layer 4, and the air bridge 41 connecting the first sublayer 21 and the second sublayer 22 is formed by a support limiting function of the bridge support layer 31; in order to enhance the strength of the air bridge abutment of the air bridge 41, the oblique evaporation process may be used to increase the thickness of the air bridge abutment of the air bridge 41, i.e., the lateral thickness of the metal coated on the bridge supporting layer, when the metal layer 4 is formed.
S400, forming a corrosion resistant layer 5 to cover the air bridge 41 so as to form corrosion resistant protection for the air bridge 41.
S500, sequentially etching and removing the exposed metal layer 4 by using a first etching solution and a second etching solution, wherein the concentration of the second etching solution is less than that of the first etching solution, it can be understood that, in this step, a part of the exposed metal layer 4 is etched and removed by using the first etching solution, and then the remaining part of the exposed metal layer 4 is etched and removed by using the second etching solution, and in the etching and removing process, the air bridge 41 is retained due to the anti-corrosion protection of the anti-corrosion layer 5 on the air bridge 41.
S600, removing the corrosion-resistant layer 5 and the bridge support layer 31 to obtain the air bridge 41.
In the embodiment of the present invention, steps S100 to S600 are performed by forming a bridge support layer 31 between a first sub-layer 21 and a second sub-layer 22 on a substrate 1 on which an epitaxial layer 2 including the separated first sub-layer 21 and second sub-layer 22 is formed; then, forming a metal layer 4 on a surface of the substrate 1 on the side of the bridge support layer 31, wherein the metal layer 4 includes an air bridge 41 covering the bridge support layer 31 and connecting the first sub-layer 21 and the second sub-layer 22; forming a resist layer 5 to cover the air bridge 41; then, etching and removing the exposed metal layer 4 by using a first etching solution and a second etching solution in sequence, wherein the concentration of the second etching solution is less than that of the first etching solution; finally, the air bridge 41 is obtained by removing the etching resistant layer 5 and the bridge supporting layer 31, that is, the air bridge 41 connecting the separated first sublayer 21 and the second sublayer 22 can be prepared, and in this embodiment, a part of the exposed metal layer 4 is etched and removed by using a first etching solution, and then the remaining part of the exposed metal layer 4 is etched and removed by using a second etching solution with a concentration smaller than that of the first etching solution, so that when the residual metal on the epitaxial layer 2 is removed, the etching progress is controllable, the etching end point is easy to confirm, and over-etching is not easy to form, thereby avoiding damage to the epitaxial layer 2.
As some embodiments of the present invention, the step of forming the bridge support layer 31 between the first sub-layer 21 and the second sub-layer 22 in step S200 includes: firstly, spin-coating S1813 photoresist on the epitaxial layer 2 to obtain the photoresist layer 3, it is understood that the embodiment of the present invention is not limited to the above type of photoresist; and patterning the photoresist layer 3 by processes such as exposure and development to obtain the bridge support layer 31 located between the first sublayer 21 and the second sublayer 22, wherein a photoresist is used to form a desired pattern structure.
In one embodiment, after the photoresist layer 3 is patterned by processes such as exposure and development, the shielding layers 32 are formed on two sides of the bridge support layer 31, a first window 33 and a second window 34 are defined between the bridge support layer 31 and the shielding layers 32, a portion of the surface of the first sub-layer 21 is exposed through the first window 33, a portion of the surface of the second sub-layer 22 is exposed through the second window 34, the first window 33 is used for defining a connection end for forming the air bridge 41 and the first sub-layer 21, and the second window 34 is used for defining a connection end for forming the air bridge 41 and the second sub-layer 22. Illustratively, the cross-sectional sizes of the first window 33 and the second window 34 are not more than 15um × 15um, and it can be understood that the first window 33 and the second window 34 are used to define a bridge pier for forming the air bridge 41 when the metal layer 4 is formed, and controlling the cross-sectional sizes of the first window 33 and the second window 34 can control the thickness of the exposed metal layer 4 on the epitaxial layer 2, thereby being helpful to reduce damage to the epitaxial layer in the etching removal process in step S500.
In order to reduce adhesion between the air bridge 41 and other parts of the metal layer 4, facilitate etching to remove the exposed metal layer 4, and remove the resist layer 5 and the bridge support layer 31, in an embodiment, a height H of the shielding layer 32 relative to the surface of the substrate 1 is greater than a height H of the bridge support layer 31 relative to the surface of the substrate 1, and for example, H is greater than or equal to 1.5H and less than or equal to 3H; in order to make the height of the shielding layer 32 greater than the height of the bridge supporting layer 31, before patterning the photoresist layer 3 through processes such as exposure and development, a directional removal process may be performed on the formed photoresist layer 3 with respect to a region where the bridge supporting layer 31 is to be formed, so that the height of the region is smaller than the height of other regions on the photoresist layer 3, and then the photoresist layer 3 is subjected to processes such as exposure and development to be patterned.
In order to prevent the edge of the photoresist layer 3 on the contact surface with the epitaxial layer 2 from tilting when the exposed metal layer 4 is removed by etching with the first etching solution and the second etching solution, which further causes the etching solution to form undercuts on the epitaxial layer 2 and form pits on the surface of the epitaxial layer 2, before the step of spin-coating the photoresist layer S1813 on the substrate 1 to obtain the photoresist layer 3, a layer of tackifier is coated on the surface of the epitaxial layer 2 to enhance the adhesion between the photoresist layer S1813 and the epitaxial layer 2, so that the edge of the contact surface of the photoresist layer 3 with the epitaxial layer 2 from tilting is avoided.
As some embodiments of the present invention, before the step of forming the metal layer 4 on the surface of the substrate 1 on the side of the bridge support layer 31, the method further includes:
referring to fig. 4, and shown in a comparative manner by referring to fig. 2, in view of that the air bridge 41 defined and formed by the bridge support layer 31 having the break angle also has the break angle, and the break angle structure makes the structural stability of the air bridge 41 poor and is prone to collapse, after the corner of the bridge support layer 31 is subjected to the filleting treatment, the air bridge 41 defined and formed by the bridge support layer 31 also has the fillet, which is beneficial to reducing stress and improving structural stability, thereby reducing the risk that the air bridge 41 is prone to collapse after the bridge support layer 31 is removed.
In order to control the etching progress and prevent the epitaxial layer 2 from being damaged when the exposed metal layer 4 is removed by etching with the first etching solution and the second etching solution, when the etching resistant layer 5 is formed to cover the air bridge 41, the etching resistant layer 5 covers the first window 33 and the second window 34, that is, the etching resistant layer 5 formed after the metal layer 4 is formed not only covers the air bridge 41 but also completely fills the residual space of the first window 33 and the second window 34, and when the first etching solution and the second etching solution are used for etching, the etching solution is etched along the metal between the etching resistant layer 5 and the shielding layer 32, and the etching solution etching channel is strictly limited, thereby being beneficial to controlling the etching progress and avoiding the epitaxial layer 2 from being damaged by over-etching.
As some embodiments of the present invention, the epitaxial layer 2 and the metal layer 4 are both made of a superconducting metal material to adapt to a quantum chip of a superconducting system, and for example, the same superconducting metal material is used for the epitaxial layer 2 and the metal layer 4 to improve signal transmission characteristics, for example, both the epitaxial layer 2 and the metal layer 4 are made of aluminum.
As some embodiments of the present invention, the step of removing the exposed metal layer 4 by sequentially etching with the first etching solution and the second etching solution in step S500 includes: etching and removing the exposed first thickness part of the metal layer 4 by using first etching liquid; etching and removing the exposed second thickness part of the metal layer 4 by using second etching liquid; wherein the first thickness portion is 50% -80% of the thickness of the metal layer 4, and the second thickness portion is 20% -50% of the thickness of the metal layer 4. Illustratively, the first etching solution is a mixed solution of acetic acid, phosphoric acid and nitric acid, and the second etching solution is a mixed solution of the diluted first etching solution, for example, the first etching solution is a mixed solution of an acetic acid standard solution, a phosphoric acid standard solution and a nitric acid standard solution with a volume ratio of 77% to 19% to 4%, and the second etching solution is a mixed solution of the first etching solution and deionized water with a volume ratio of 1: 1, wherein the average molecular weight of the adopted acetic acid standard solution is 60.05, the average molecular weight of the phosphoric acid standard solution is 63.01, and the average molecular weight of the nitric acid standard solution is 9800. In order to ensure that the etching speed is controllable, the first etching liquid and the second etching liquid are etched at constant temperature.
Embodiments of the present invention also provide a superconducting quantum device, e.g., a quantum chip of a superconducting system, including an air bridge fabricated according to the fabrication method in embodiments of the present invention.
It should be noted that, in the related art of the air bridge preparation at present, most of the methods are methods for transferring a desired pattern to another sacrificial layer by using a photoresist to manufacture an air bridge, and this process uses a plurality of photoresists.
The construction, features and functions of the present application are described in detail in the embodiments illustrated in the drawings, which are only preferred embodiments of the present application, but the present application is not limited by the drawings, and all equivalent embodiments that can be modified or changed according to the idea of the present application are within the scope of the present application without departing from the spirit of the present application.
Claims (10)
1. A method for preparing an air bridge is characterized by comprising the following steps:
providing a substrate formed with an epitaxial layer, wherein the epitaxial layer comprises a first sub-layer and a second sub-layer which are separated;
forming a bridge support layer between the first sublayer and the second sublayer;
forming a metal layer on the surface of the substrate on one side of the bridge support layer, wherein the metal layer comprises an air bridge which covers the bridge support layer and is connected with the first sub-layer and the second sub-layer;
forming a resist layer covering the air bridge;
etching and removing the exposed metal layer by using first etching liquid and second etching liquid in sequence, wherein the concentration of the second etching liquid is less than that of the first etching liquid;
and removing the corrosion resistant layer and the bridge supporting layer to obtain the air bridge.
2. The method of claim 1, wherein the step of forming a bridge support layer between the first and second sub-layers comprises:
coating photoresist on the epitaxial layer to obtain a photoresist layer;
patterning the photoresist layer to obtain the bridge support layer between the first sub-layer and the second sub-layer.
3. The preparation method according to claim 2, wherein shielding layers are formed on two sides of the bridge support layer, a first window for exposing a part of the first sub-layer and a second window for exposing a part of the second sub-layer are defined between the bridge support layer and the shielding layers, wherein the first window is used for defining a connection end for forming the air bridge and the first sub-layer, and the second window is used for defining a connection end for forming the air bridge and the second sub-layer.
4. The method of claim 3, wherein the first window and the second window have a cross-sectional size of no more than 15um x 15um.
5. The method of claim 3, wherein the height of the masking layer is greater than the height of the bridge support layer.
6. The method according to any one of claims 1 to 5, further comprising, before the step of forming a metal layer on the surface of the substrate on the side of the bridge support layer:
filleting corners of the bridge support layer.
7. The method of any one of claims 1-5, wherein the epitaxial layer and the metal layer are of the same superconducting metal material.
8. The method of claim 7, wherein the epitaxial layer and the metal layer are both aluminum.
9. The method according to claim 1, wherein the step of removing the exposed metal layer by sequentially using a first etching solution and a second etching solution comprises:
etching and removing the exposed first thickness part of the metal layer by using first etching liquid;
etching and removing the second thickness part of the exposed metal layer by using second etching liquid;
wherein the first thickness portion is 50% -80% of the thickness of the metal layer, and the second thickness portion is 20% -50% of the thickness of the metal layer.
10. A superconducting quantum device comprising an air bridge produced by the production method according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110823371.XA CN115700217A (en) | 2021-07-21 | 2021-07-21 | Preparation method of air bridge and superconducting quantum device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110823371.XA CN115700217A (en) | 2021-07-21 | 2021-07-21 | Preparation method of air bridge and superconducting quantum device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115700217A true CN115700217A (en) | 2023-02-07 |
Family
ID=85120414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110823371.XA Pending CN115700217A (en) | 2021-07-21 | 2021-07-21 | Preparation method of air bridge and superconducting quantum device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115700217A (en) |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4857481A (en) * | 1989-03-14 | 1989-08-15 | Motorola, Inc. | Method of fabricating airbridge metal interconnects |
| CN1725505A (en) * | 2004-07-21 | 2006-01-25 | 索尼株式会社 | Bipolar transistor and fabrication method of the same |
| CN101276778A (en) * | 2007-03-28 | 2008-10-01 | 中国科学院微电子研究所 | Method for preparing air bridge using photosensitive subbing |
| CN102832162A (en) * | 2011-06-13 | 2012-12-19 | 中芯国际集成电路制造(上海)有限公司 | Air bridge three-dimensional circuit and manufacturing method thereof |
| CN103107074A (en) * | 2011-11-11 | 2013-05-15 | 中芯国际集成电路制造(上海)有限公司 | Metal grid forming method |
| CN103367394A (en) * | 2012-03-29 | 2013-10-23 | 中国科学院微电子研究所 | Semiconductor device and manufacturing method |
| CN103681859A (en) * | 2013-08-27 | 2014-03-26 | 厦门天睿电子有限公司 | A silicon carbide semiconductor device and a manufacturing method thereof |
| CN104078414A (en) * | 2013-03-28 | 2014-10-01 | 中芯国际集成电路制造(上海)有限公司 | Silicon through hole and formation method |
| CN106024702A (en) * | 2016-06-21 | 2016-10-12 | 中山德华芯片技术有限公司 | Manufacturing method of air bridge with inverted trapezoidal pier |
| CN109216505A (en) * | 2018-09-26 | 2019-01-15 | 上海神舟新能源发展有限公司 | The preparation method for having the crystal-silicon solar cell of polysilicon passivating film |
| CN109279572A (en) * | 2018-11-19 | 2019-01-29 | 中国科学技术大学 | Superconductor Vacuum bridge and preparation method thereof |
| CN109473391A (en) * | 2018-11-12 | 2019-03-15 | 苏州汉骅半导体有限公司 | Air bridges manufacturing method |
| CN109545738A (en) * | 2018-11-12 | 2019-03-29 | 苏州汉骅半导体有限公司 | Air bridges manufacturing method |
| CN109597250A (en) * | 2018-12-26 | 2019-04-09 | 深圳市华星光电技术有限公司 | The production method of the production method and its stereo electrod of blue-phase liquid crystal panel |
| CN110429060A (en) * | 2019-07-30 | 2019-11-08 | 厦门市三安集成电路有限公司 | A kind of method making air bridges and its structure and application |
-
2021
- 2021-07-21 CN CN202110823371.XA patent/CN115700217A/en active Pending
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4857481A (en) * | 1989-03-14 | 1989-08-15 | Motorola, Inc. | Method of fabricating airbridge metal interconnects |
| CN1725505A (en) * | 2004-07-21 | 2006-01-25 | 索尼株式会社 | Bipolar transistor and fabrication method of the same |
| CN101276778A (en) * | 2007-03-28 | 2008-10-01 | 中国科学院微电子研究所 | Method for preparing air bridge using photosensitive subbing |
| CN102832162A (en) * | 2011-06-13 | 2012-12-19 | 中芯国际集成电路制造(上海)有限公司 | Air bridge three-dimensional circuit and manufacturing method thereof |
| CN103107074A (en) * | 2011-11-11 | 2013-05-15 | 中芯国际集成电路制造(上海)有限公司 | Metal grid forming method |
| CN103367394A (en) * | 2012-03-29 | 2013-10-23 | 中国科学院微电子研究所 | Semiconductor device and manufacturing method |
| CN104078414A (en) * | 2013-03-28 | 2014-10-01 | 中芯国际集成电路制造(上海)有限公司 | Silicon through hole and formation method |
| CN103681859A (en) * | 2013-08-27 | 2014-03-26 | 厦门天睿电子有限公司 | A silicon carbide semiconductor device and a manufacturing method thereof |
| CN106024702A (en) * | 2016-06-21 | 2016-10-12 | 中山德华芯片技术有限公司 | Manufacturing method of air bridge with inverted trapezoidal pier |
| CN109216505A (en) * | 2018-09-26 | 2019-01-15 | 上海神舟新能源发展有限公司 | The preparation method for having the crystal-silicon solar cell of polysilicon passivating film |
| CN109473391A (en) * | 2018-11-12 | 2019-03-15 | 苏州汉骅半导体有限公司 | Air bridges manufacturing method |
| CN109545738A (en) * | 2018-11-12 | 2019-03-29 | 苏州汉骅半导体有限公司 | Air bridges manufacturing method |
| CN109279572A (en) * | 2018-11-19 | 2019-01-29 | 中国科学技术大学 | Superconductor Vacuum bridge and preparation method thereof |
| CN109597250A (en) * | 2018-12-26 | 2019-04-09 | 深圳市华星光电技术有限公司 | The production method of the production method and its stereo electrod of blue-phase liquid crystal panel |
| CN110429060A (en) * | 2019-07-30 | 2019-11-08 | 厦门市三安集成电路有限公司 | A kind of method making air bridges and its structure and application |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7911034B2 (en) | Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers | |
| EP0602607A1 (en) | Method for fabricating multi-level interconnection structure for semiconductor device | |
| CN114256407B (en) | Method for producing two josephson junctions connected in parallel to each other and a qubit device | |
| JPS63107119A (en) | Manufacture of integrated circuit with stepped insulating layer | |
| JPH0482263A (en) | Semiconductor storage device | |
| EP0145272B1 (en) | Metal/semiconductor deposition | |
| CN115700217A (en) | Preparation method of air bridge and superconducting quantum device | |
| CN115433905B (en) | Josephson junction and method for producing same | |
| EP1182468A2 (en) | Method for forming grating pattern on glass substrate | |
| JPH0249017B2 (en) | ||
| JPS59202648A (en) | Manufacture of semiconductor device | |
| JPS59148350A (en) | Manufacture of semiconductor device | |
| JP2570735B2 (en) | Multi-layer wiring formation method | |
| JP2985204B2 (en) | Method for manufacturing semiconductor device | |
| JP4534763B2 (en) | Manufacturing method of semiconductor device | |
| CN116761499A (en) | Air bridge and manufacturing method thereof and superconducting quantum device | |
| JPS6254427A (en) | Manufacture of semiconductor device | |
| JPS5854651A (en) | Manufacture of semiconductor device | |
| KR100609222B1 (en) | Formation Method of Fine Metal Wiring in Semiconductor Manufacturing Process | |
| JPH0794794A (en) | Manufacture of superconducting josephson device | |
| JPS63161645A (en) | Manufacture of semiconductor device | |
| CN116978781A (en) | Photoetching patterning method, structure and metal patterning method in chip manufacturing | |
| KR920007186B1 (en) | Removing method of remains at cleaning process | |
| JP2872298B2 (en) | Method for manufacturing semiconductor device | |
| JPH04133315A (en) | Manufacture of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 230088 6th floor, E2 building, phase II, innovation industrial park, 2800 innovation Avenue, Hefei high tech Zone, Hefei City, Anhui Province Applicant after: Benyuan Quantum Computing Technology (Hefei) Co.,Ltd. Address before: 230088 6th floor, E2 building, phase II, innovation industrial park, 2800 innovation Avenue, Hefei high tech Zone, Hefei City, Anhui Province Applicant before: ORIGIN QUANTUM COMPUTING COMPANY, LIMITED, HEFEI |
|
| CB02 | Change of applicant information |