CN115433905B - Josephson junction and method for producing same - Google Patents
Josephson junction and method for producing same Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title description 2
- 230000004888 barrier function Effects 0.000 claims abstract description 98
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 42
- 230000003647 oxidation Effects 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 24
- 230000001590 oxidative effect Effects 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 abstract description 30
- 230000008569 process Effects 0.000 description 13
- 238000005036 potential barrier Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
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Abstract
The invention discloses a Josephson junction and a preparation method thereof. The preparation method comprises the following steps: determining a first region and a second region on the substrate, the first region and the second region having an intersection region; forming a first superconducting layer in the first region; forming a first barrier layer on the first superconducting layer by oxidation; forming a second superconducting layer on the first barrier layer of the intersection region; converting the second superconducting layer as a whole into a second barrier layer by oxidation; a third superconducting layer is formed on the second barrier layer to obtain a josephson junction at the intersection region. The Josephson junction is obtained by the preparation method. Through the mode, the thickness of the barrier layer can be controlled under the condition of reducing the oxidation pressure of the barrier layer, and the Josephson junction with a large line width is further obtained.
Description
Technical Field
The invention relates to the technical field of semiconductor preparation, in particular to a Josephson junction and a preparation method thereof.
Background
Josephson junctions are key devices of superconducting quantum circuits, and are generally formed by sandwiching a very thin insulating layer (barrier layer) between two superconducting layers. An important parameter of a josephson junction is the critical current, which is determined by the area of the josephson junction, the larger the area the higher the critical current value. Increasing the area of the josephson junction can be achieved by increasing the linewidth of the superconductive layer.
However, the area of the josephson junction is inversely proportional to the resistance, and the resistance decreases as the area increases, which is not desirable. In the prior art, the barrier layer is usually obtained by oxidizing the surface of the superconducting layer once, in order to increase the linewidth of the superconducting layer and improve the resistance of the Josephson junction, the prior art adopts the method of increasing the oxidizing air pressure (generally above 500 torr) to increase the thickness of the barrier layer so as to improve the resistance, however, the larger the oxidizing air pressure is, the more difficult the control of the oxidizing process is, the uncontrollable thickness of the barrier layer is caused, and the resistance fluctuation is large, and even the performance failure of the Josephson junction is caused seriously.
Disclosure of Invention
The invention aims to provide a Josephson junction and a preparation method thereof, which are used for solving the problem that the oxidation pressure of a barrier layer is too large in the prior art, and controlling the thickness of the barrier layer under the condition of reducing the oxidation pressure of the barrier layer so as to obtain the Josephson junction with large linewidth.
In order to solve the technical problems, the invention provides a preparation method of a Josephson junction, which comprises the following steps:
determining a first region and a second region on a substrate, the first region and the second region having an intersection region;
forming a first superconducting layer in the first region;
forming a first barrier layer on the first superconducting layer by oxidation;
forming a second superconducting layer on the first barrier layer of the intersection region;
converting the second superconducting layer as a whole into a second barrier layer by oxidation;
a third superconducting layer is formed on the second barrier layer to obtain a josephson junction at the intersection region.
Preferably, the line widths of the first superconducting layer and the third superconducting layer are equal, and the thickness of the first superconducting layer or the thickness of the third superconducting layer is greater than the sum of the thicknesses of the first barrier layer and the second barrier layer.
Preferably, the thickness of the first barrier layer is below 2nm, the thickness of the second barrier layer is 0.1-1 nm, and the area of the intersection region is 0.64um 2 The above.
Preferably, the step of forming a first superconducting layer in the first region includes:
forming a first mask layer on the substrate;
etching a first window with the shape consistent with that of the first region on the first mask layer;
depositing superconducting material within the first window;
and stripping the first mask layer to form a first superconducting layer.
Preferably, the step of forming a first barrier layer on the first superconducting layer by oxidation includes:
and oxidizing the surface of the first superconducting layer to form a first barrier layer on the first superconducting layer.
Preferably, before the step of oxidizing the surface of the first superconducting layer to form a first barrier layer on the first superconducting layer, the step of forming the first barrier layer on the first superconducting layer by oxidation further includes:
and removing the natural oxide layer on the surface of the first superconducting layer.
Preferably, the natural oxide layer is removed by an ion beam etching method.
Preferably, the step of forming a second superconducting layer on the first barrier layer of the intersection region includes:
forming a second mask layer on the substrate;
etching a second window exposing the intersection area on the second mask layer;
depositing superconducting material within the second window;
and stripping the second mask layer to form a second superconducting layer.
Preferably, the oxidation pressure of the first barrier layer is 0.1-0.5 torr and the oxidation time is below 10min, and the oxidation pressure of the second barrier layer is 0.8-1 torr and the oxidation time is below 10 min.
Preferably, the superconducting material is deposited by adopting a direct evaporation or oblique evaporation coating process.
Preferably, the first window has a superconducting material deposition rate of
The second window has a superconducting material deposition rate of +.>
In order to solve the technical problems, the invention also provides the Josephson junction obtained by the preparation method according to any one of the above.
In contrast to the situation in the prior art, the preparation method of the josephson junction provided by the invention is characterized in that the first area and the second area with the intersection area are determined on the substrate, the first superconducting layer is formed on the first area, the first barrier layer is formed on the first superconducting layer through oxidization, then the second superconducting layer is formed on the first barrier layer of the intersection area, the second superconducting layer is integrally converted into the second barrier layer through oxidization, and finally the third superconducting layer is formed on the second barrier layer.
The Josephson junction provided by the invention is obtained by the preparation method of the Josephson junction, and belongs to the same conception as the preparation method of the Josephson junction, so that the Josephson junction has the same beneficial effects and is not repeated here.
Drawings
Fig. 1 is a schematic flow chart of a preparation method of a josephson junction according to embodiment 1 of the present invention.
Fig. 2 is a process diagram corresponding to the preparation method shown in fig. 1.
Fig. 3 is a schematic flow chart of forming a first superconducting layer in the preparation method of the josephson junction provided in embodiment 2 of the present invention.
Fig. 4 is a process diagram of the first superconducting layer forming process shown in fig. 3.
Fig. 5 is a schematic flow chart of forming a first barrier layer in the preparation method of the josephson junction provided in embodiment 3 of the present invention.
Fig. 6 is a schematic flow chart of forming a second superconducting layer in the preparation method of the josephson junction provided in embodiment 3 of the present invention.
Fig. 7 is a process diagram of the second superconducting layer forming process shown in fig. 6.
Detailed Description
Specific embodiments of the present invention will be described in more detail below with reference to the drawings. Advantages and features of the invention will become more apparent from the following description and claims. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", etc., are based on the directions or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
Example 1
Referring to fig. 1 and 2 in combination, embodiment 1 of the present invention provides a method for preparing josephson junctions, which comprises the following steps:
s1: a first region and a second region are defined on the substrate, the first region and the second region having an intersection region.
The first area and the second area may be elongated, and the intersecting manner may be perpendicular. As shown in fig. 2 (a), the first area a and the second area B have equal widths, and vertically intersect each other so that the intersection area has a square shape.
In this embodiment, the second region may have multiple sites, so that multiple josephson junctions can be fabricated at a time, as shown in fig. 2 (a), with two sites in the second region B.
S2: a first superconducting layer is formed on the first region.
Wherein, as shown in fig. 2 (b), the first region a is formed with a first superconductive layer A1.
S3: a first barrier layer is formed on the first superconducting layer by oxidation.
Wherein, as shown in fig. 2 (c), a first barrier layer A2 is formed on the first superconducting layer A1.
S4: a second superconducting layer is formed on the first barrier layer in the intersection region.
As shown in fig. 2 (d), the second superconducting layer B1 is formed on the first barrier layer A2. In order to simplify the process, the present embodiment forms the second superconducting layer B1 in other regions than the intersection region. That is, the second superconducting layer B1 is formed in the second region B to overlap with the first barrier layer A2.
S5: the second superconducting layer is entirely converted into a second barrier layer by oxidation.
As shown in fig. 2 (e), the second barrier layer B2 is converted from the second superconducting layer B1, and since the second barrier layer B2 and the first barrier layer A2 together form the barrier layer of the josephson junction, compared with the barrier layer obtained by oxidizing only once in the prior art, the first barrier layer A2 and the second barrier layer B2 are obtained by oxidizing respectively, so that the thicknesses of the first barrier layer A2 and the second barrier layer B2 are smaller than the barriers obtained in the prior art, the requirement on the oxidizing gas pressure is low, and the thickness controllability is easier to realize.
Meanwhile, since the thickness of the second superconducting layer B1 is small, the second superconducting layer B1 may implement overall oxidation instead of merely oxidizing the surface.
S6: a third superconducting layer is formed on the second barrier layer to obtain a josephson junction at the intersection region.
As shown in fig. 2 (f), the third superconducting layer B3 is formed on the second barrier layer B2, and the hierarchical structure of the third superconducting layer B is sequentially from bottom to top in the intersection region of the first region a and the second region B; the first superconductive layer A1, the first barrier layer A2, the second barrier layer B2 and the third superconductive layer A3 are integrated, and the first barrier layer A2 and the second barrier layer B2 form a superconductive layer-barrier layer-superconductive layer structure, so that the hierarchical structure forms a Josephson junction.
In this embodiment, the first superconducting layer and the second superconducting layer may be made of superconducting materials such as aluminum or titanium nitride. When the first superconducting layer and the second superconducting layer adopt aluminum, the first barrier layer and the second barrier layer are made of aluminum oxide.
In this embodiment, the line widths of the first superconducting layer and the third superconducting layer are equal, and the thickness of the first superconducting layer or the thickness of the third superconducting layer is greater than the sum of the thicknesses of the first barrier layer and the second barrier layer. Specifically, the thickness of the first barrier layer is below 2nm, the thickness of the second barrier layer is 0.1-1 nm, and the area of the intersection region is 0.64um 2 The above. In one practical application, the first barrier layer has a thickness of 2nm, the second barrier layer has a thickness of 0.6nm, and the area of the intersection region (i.e. the area of the Josephson junction) is 2.2um 2 The resistance of the Josephson junction is measured to be 5k omega-10 k omega, so that the application requirement is met.
Through the above manner, the preparation method of the embodiment prepares the potential barrier layer of the Josephson junction twice, and the thickness of the potential barrier layer prepared once is reduced, so that the requirement on oxidation pressure is reduced when preparing the potential barrier layer each time, the total thickness of the two potential barrier layers is controllable, the resistance of the Josephson junction is ensured to be in a target range, the thickness of the potential barrier layer can be controlled under the condition of reducing the oxidation pressure of the potential barrier layer, the resistance of the Josephson junction can be improved while the linewidth of the superconducting layer is increased, and the Josephson junction with a large linewidth is further obtained.
Example 2
The process of forming the first superconducting layer in the preparation method of the josephson junction provided in embodiment 2 of the present invention is schematically shown. The preparation method of the josephson junction of this embodiment is based on the preparation method of the josephson junction of embodiment 1, except that, referring to fig. 3 and fig. 4 in combination, in the preparation method of the josephson junction of this embodiment, the step of forming the first superconducting layer in the first region, that is, step S2 includes:
s21: a first mask layer is formed over a substrate.
Wherein, as shown in fig. 4 (a), a first mask layer A0 is formed on the substrate. Illustratively, one specific way to form the first mask layer is to apply a photoresist on the substrate to obtain the first mask layer.
S22: and etching a first window which is consistent with the shape of the first region on the first mask layer.
As shown in fig. 4 (b), a first window a01 having a shape consistent with that of the first region a is etched in the first mask layer A0. Illustratively, one specific way to etch the first window is to expose and develop the first mask layer to form the first window.
S23: a superconducting material is deposited within the first window.
Wherein, as shown in fig. 4 (c), the hatched portion in the figure indicates the deposited superconducting material, and the first superconducting layer A1 is formed after the superconducting material deposition is completed.
In this embodiment, the superconducting material may be deposited by a direct evaporation or oblique evaporation coating process, and the deposition rate of the superconducting material in the first window may be set to be
S24: and stripping the first mask layer to form a first superconducting layer.
After the first mask layer A0 is stripped, the first region a on the substrate forms a first superconductive layer A1 as shown in fig. 4 (d).
Example 3
The process of forming the first superconducting layer in the preparation method of the josephson junction provided in embodiment 3 of the present invention is schematically shown. The preparation method of the josephson junction of this embodiment is based on the preparation method of the josephson junction of embodiment 2, except that, referring to fig. 5, in the preparation method of the josephson junction of this embodiment, the step of forming the first barrier layer on the first superconducting layer by oxidation, that is, step S3 includes:
s31: and removing the natural oxide layer on the surface of the first superconducting layer.
In the process flow, when the oxidation is performed, a sample needs to be transferred from a vacuum transition cavity to an oxidation cavity of the process equipment, and in the transfer process, a natural oxidation layer is possibly formed on the surface because the first superconducting layer contacts with air, and the thickness of the natural oxidation layer is not controlled due to the natural oxidation, so that the controllable oxidation is performed after the natural oxidation layer on the surface of the first superconducting layer is removed.
In this embodiment, the native oxide layer is removed by Ion Beam Etching (IBE).
S32: oxidizing the surface of the first superconducting layer to form a first barrier layer on the first superconducting layer.
The thickness of the first barrier layer is required to be smaller, so that the oxidation pressure of the first barrier layer can be reduced, and the thickness of the first barrier layer is controllable. In this embodiment, the thickness of the first barrier layer can be controlled to be 2nm or less by controlling the oxidation pressure of the first barrier layer to be 0.1torr to 0.5torr and the oxidation time to be 10 minutes or less. Similarly, the thickness of the second barrier layer can be controlled to be 0.1nm to 1nm by controlling the oxidation pressure of the second barrier layer to be 0.8torr to 1torr and the oxidation time to be less than 10 minutes.
In some other embodiments, step S31 may not be required if it can be ensured that air is not contacted during the sample transfer. That is, step S3 may include only step S32.
Example 4
The process of forming the first superconducting layer in the preparation method of the josephson junction provided in embodiment 4 of the present invention is schematically shown. The preparation method of the josephson junction of this embodiment is based on the preparation method of the josephson junction of embodiment 2 or embodiment 3, except that in the preparation method of the josephson junction of this embodiment, referring to fig. 6 and fig. 7 in combination, the step of forming the second superconducting layer on the first barrier layer of the intersection region, that is, the step S4 includes:
s41: a second mask layer is formed over the substrate.
Wherein, as shown in fig. 7 (a), a second mask layer B0 is formed on the substrate. Illustratively, one specific way to form the second mask layer is to apply a photoresist on the substrate to obtain the second mask layer.
S42: a second window is etched in the second mask layer at an intersection with the exposed region.
As shown in fig. 7 (B), a second window B01 is etched in the second mask layer B0 at an area where the second window B01 intersects with the exposure. Illustratively, one specific way to etch the second window is to expose and develop the second mask layer to form the second window.
S43: a superconducting material is deposited within the second window.
Wherein, as shown in fig. 7 (c), the hatched portion in the second window in the figure indicates the deposited superconducting material, and the second superconducting layer B1 is formed after the superconducting material deposition is completed.
In this embodiment, the superconducting material may be deposited by a direct evaporation or oblique evaporation coating process, and the second window may be set to have a superconducting material deposition rate of
S44: and stripping the second mask layer to form a second superconducting layer.
As shown in fig. 7 (d), after the second mask layer B0 is stripped, the second superconductive layer B1 is formed in the second region B on the substrate.
It should be noted that, in this embodiment, the second mask layer is formed after the first barrier layer is formed, and in some other embodiments, the second mask layer may be formed after the first superconducting layer is formed and before the first barrier layer is formed, that is, steps S3 and S4 are not necessarily sequential, where the second window is required to simultaneously expose the first region. Specifically, after the first superconducting layer is formed, before oxidizing the surface of the first superconducting layer, a second mask layer is formed, then a second window exposing the first area is etched on the second mask layer, then the surface of the first superconducting layer in the first area is oxidized to form a first barrier layer, and finally a superconducting material is deposited in the second window to form a second superconducting layer. In order to facilitate the formation of the second and third superconducting layers and to enhance the deposition effect, the second window may simultaneously expose the first and second regions as shown in fig. 7 (c).
Example 5
Embodiment 5 of the invention also protects a josephson junction prepared by the method of preparing a josephson junction according to any of the previous embodiments.
The preparation method of the embodiment prepares the barrier layers twice, the thickness of the barrier layer prepared once is reduced, so that the requirement on oxidation air pressure is reduced when the barrier layers are prepared each time, the total thickness of the two barrier layers is controllable, the total thickness of the barrier layers of the Josephson junction can be adjusted by controlling the thickness of the first barrier layer and/or the second barrier layer, and the resistance of the Josephson junction is further ensured to be in a target range, so that the Josephson junction of the embodiment can obtain a larger area, and the resistance can be improved.
In the description of the present specification, a description of the terms "one embodiment," "some embodiments," "examples," or "particular examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments. Further, one skilled in the art can engage and combine the different embodiments or examples described in this specification.
The foregoing is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any person skilled in the art will make any equivalent substitution or modification to the technical solution and technical content disclosed in the invention without departing from the scope of the technical solution of the invention, and the technical solution of the invention is not departing from the scope of the invention.
Claims (12)
1. A method of preparing a josephson junction comprising:
determining a first region and a second region on a substrate, the first region and the second region having an intersection region;
forming a first superconducting layer in the first region;
forming a first barrier layer on the first superconducting layer by oxidation;
forming a second superconducting layer on the first barrier layer of the intersection region;
converting the second superconducting layer as a whole into a second barrier layer by oxidation;
a third superconducting layer is formed on the second barrier layer to obtain a josephson junction at the intersection region.
2. The method of claim 1, wherein the first superconducting layer and the third superconducting layer have equal line widths, and wherein the thickness of the first superconducting layer or the thickness of the third superconducting layer is greater than the sum of the thicknesses of the first barrier layer and the second barrier layer.
3. The method according to claim 2, wherein the first barrier layer has a thickness of 2nm or less, the second barrier layer has a thickness of 0.1nm to 1nm, and the area of the intersection region is 0.64um 2 The above.
4. The method of claim 3, wherein the step of forming a first superconducting layer in the first region comprises:
forming a first mask layer on the substrate;
etching a first window with the shape consistent with that of the first region on the first mask layer;
depositing superconducting material within the first window;
and stripping the first mask layer to form a first superconducting layer.
5. The method of claim 4, wherein the step of forming a first barrier layer on the first superconducting layer by oxidation comprises:
and oxidizing the surface of the first superconducting layer to form a first barrier layer on the first superconducting layer.
6. The method of claim 5, wherein prior to the step of oxidizing the surface of the first superconducting layer to form a first barrier layer on the first superconducting layer, the step of forming a first barrier layer on the first superconducting layer by oxidation further comprises:
and removing the natural oxide layer on the surface of the first superconducting layer.
7. The method of claim 6, wherein the native oxide layer is removed by ion beam etching.
8. The method of claim 5 or 6, wherein the step of forming a second superconducting layer on the first barrier layer in the intersection region comprises:
forming a second mask layer on the substrate;
etching a second window exposing the intersection area on the second mask layer;
depositing superconducting material within the second window;
and stripping the second mask layer to form a second superconducting layer.
9. The method according to claim 8, wherein the first barrier layer has an oxidation pressure of 0.1torr to 0.5torr and an oxidation time of 10 minutes or less, and the second barrier layer has an oxidation pressure of 0.8torr to 1torr and an oxidation time of 10 minutes or less.
10. The method of claim 8, wherein the superconducting material is deposited using a direct evaporation or oblique evaporation coating process.
11. The method of claim 10, wherein the first window has a superconducting material deposition rate of
The second window has a superconducting material deposition rate of +.>
12. A josephson junction obtainable by the method of any one of claims 1to 11.
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| JPS62232982A (en) * | 1986-04-03 | 1987-10-13 | Nec Corp | Josephson junction device |
| US6541789B1 (en) * | 1998-09-01 | 2003-04-01 | Nec Corporation | High temperature superconductor Josephson junction element and manufacturing method for the same |
| CN111969101A (en) * | 2020-08-26 | 2020-11-20 | 中国科学院上海微系统与信息技术研究所 | NbN-based Josephson junction and preparation method thereof |
| CN112670401A (en) * | 2020-12-21 | 2021-04-16 | 中国科学院上海微系统与信息技术研究所 | Josephson junction and superconducting device and preparation method thereof |
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