CN214046190U - Film sensor insulating layer composite structure based on metal substrate - Google Patents
Film sensor insulating layer composite structure based on metal substrate Download PDFInfo
- Publication number
- CN214046190U CN214046190U CN202120316005.0U CN202120316005U CN214046190U CN 214046190 U CN214046190 U CN 214046190U CN 202120316005 U CN202120316005 U CN 202120316005U CN 214046190 U CN214046190 U CN 214046190U
- Authority
- CN
- China
- Prior art keywords
- layer
- metal substrate
- insulating layer
- insulating
- isolation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model discloses a film sensor insulating layer composite construction based on metal substrate, including the metal substrate layer, set up the adhesive linkage on the metal substrate layer, set up the first insulation layer on the adhesive linkage, set up the first isolation layer on the first insulation layer, set up the second insulating layer on the first isolation layer, the sensor circuit layer that sets up on the second insulating layer covers or does not cover the protective layer on second insulating layer and sensor circuit layer. The silicon nitride isolation layer of the utility model is not in direct contact with the metal substrate, thereby avoiding the possibility of reaction with the metal substrate in a high temperature environment; meanwhile, due to the isolation of the silicon nitride isolation layer, a pinhole in the aluminum oxide insulation layer is isolated, so that short circuit between the sensor circuit layer and the metal substrate is avoided, and the insulation capability of the film sensor based on the metal substrate in the use process in a high-temperature environment is ensured.
Description
Technical Field
The utility model relates to an use film sensor insulating layer composite construction based on metal substrate under high temperature environment belongs to film sensor technical field.
Background
With the upgrading of industrial internet and intelligent manufacturing industry, the real-time monitoring of the manufacturing process becomes more and more important, the product quality can be improved and the production efficiency can be improved by acquiring key process parameters in the manufacturing process, problems can be found in advance and timely intervention can be performed, and therefore the occurrence of serious accidents is avoided. The sensor plays an important role in acquiring data such as key process parameters, but the traditional sensor is difficult to approach a point to be measured due to large size, and even if the traditional sensor contacts the point to be measured in different installation modes, the traditional sensor has great damage to the original physical field, so that the detection authenticity is damaged; meanwhile, the traditional sensor has slow response and great hysteresis, so that the requirement of on-site real-time monitoring is difficult to meet. The thin film sensor can provide higher spatial resolution and time resolution by virtue of the characteristics of small size and quick response, so that the field monitoring is more real and timely. However, the conventional thin film sensor based on the silicon substrate is difficult to be applied to the occasions of high temperature, high pressure, large strain and corrosivity due to the defects of brittleness, non-high temperature resistance and the like of the substrate material.
In order to solve the above problems, a thin film sensor based on a metal substrate has been developed, but due to the particularity of the metal substrate, the substrate needs to be polished in a conventional processing environment where cleanliness is not high, and then transferred to an ultra clean room for manufacturing the sensor. In the subsequent process of manufacturing the sensor in an ultraclean room, the phenomenon of pinholes (pin holes) exists in the insulating layer manufactured by adopting an electron beam evaporation (E-beam evaporation) process, while the insulating layer manufactured by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) process does not have pinholes (pin holes), but the insulating layer can react with the metal substrate at high temperature, and the two phenomena can bring short circuit between a sensor circuit and the metal substrate and finally cause the failure of sensor manufacturing.
SUMMERY OF THE UTILITY MODEL
In order to overcome the defects of the prior art, the utility model provides a film sensor insulating layer composite construction based on metal substrate has guaranteed the reliability of insulating layer to realized the successful use of film sensor under high temperature environment based on metal substrate.
In order to realize the technical purpose, the utility model discloses a technical scheme is: the utility model provides a film sensor insulating layer composite construction based on metal substrate, includes the metal substrate layer, sets up the adhesive linkage on the metal substrate layer, sets up the first insulating layer on the adhesive linkage, sets up the first isolation layer on the first insulating layer, sets up the second insulating layer on the first isolation layer, the sensor circuit layer that sets up on the second insulating layer, cover or not cover the protective layer on second insulating layer and sensor circuit layer.
Furthermore, the bonding layer is a metal titanium layer with the thickness of 5-50 nm deposited on the metal substrate.
Furthermore, the first insulating layer is an alumina layer with the thickness of 0.2-5 um deposited on the bonding layer.
Furthermore, the first isolation layer is a silicon nitride layer which is deposited on the first insulation layer and is 0.5-5 um thick.
Furthermore, the second insulating layer is an alumina layer deposited on the first isolating layer and having a thickness of 0.2-5 um.
Furthermore, the protective layer is an alumina layer with the thickness of 0.2-5 um deposited on the second insulating layer, and the alumina layer does not cover the bonding pad of the sensor circuit layer.
Furthermore, a second isolation layer is further arranged on the protection layer, the second isolation layer is a silicon nitride layer which is deposited on the protection layer and is 0.5-5 um thick, and the silicon nitride layer does not cover the bonding pad of the sensor circuit layer.
Furthermore, still be provided with the second protective layer on the second isolation layer, the second protective layer is the deposited 0.2 ~ 5 um thick aluminium oxide layer on the second isolation layer, and the pad on sensor circuit layer is not covered to the aluminium oxide layer.
The preparation process of the thin film sensor insulating layer composite structure based on the metal substrate comprises the following steps:
cleaning a metal substrate by acetone, isopropanol and deionized water, and drying by nitrogen to finish substrate preparation;
depositing a 5-50 nm metal titanium (Ti) layer on the metal substrate through a sputtering process (sputtering) for improving the adhesion between a subsequent insulating layer and the metal substrate;
depositing a layer of 0.2-5 um aluminum oxide (Al) on the metal titanium (Ti) layer by an electron beam evaporation process (E-beam evaporation)2O3) An insulating layer;
step four, performing Plasma Enhanced Chemical Vapor Deposition (PECVD) on aluminum oxide (Al)2O3) Depositing a layer of 0.5-5 um silicon nitride (Si) on the insulating layer3N4) An isolation layer;
depositing an aluminum oxide insulating layer of 0.2-5 um on the silicon nitride isolating layer by an electron beam evaporation process;
sixthly, depositing a sensor circuit layer on the alumina insulating layer through photoetching, sputtering and stripping;
depositing a 0.2-5 um aluminum oxide protective layer on the region except the bonding pad of the sensor circuit layer by an electron beam evaporation process by using a metal mask, wherein the bonding pad of the sensor circuit is exposed and is not covered by the aluminum oxide protective layer;
depositing a silicon nitride isolation layer of 0.5-5 um on the alumina protective layer by a plasma enhanced chemical vapor deposition process by means of a metal mask, wherein a bonding pad of the sensor circuit is exposed and is not covered by the silicon nitride isolation layer;
and step eight, depositing a 0.2-5 um aluminum oxide protective layer on the silicon nitride isolation layer by means of a metal mask through an electron beam evaporation process, wherein the bonding pad of the sensor circuit is exposed and is not covered by the aluminum oxide protective layer.
The utility model has the beneficial technical effects that: the silicon nitride isolation layer is not contacted with the metal substrate, so that the possibility of reaction between the silicon nitride isolation layer and the metal substrate in a high-temperature environment is avoided; meanwhile, although a pinhole (pin hole) exists in the alumina insulation layer, the pinhole is blocked due to the isolation of the silicon nitride isolation layer, so that short circuit between the sensor circuit layer and the metal substrate is avoided, and the insulation capability of the thin film sensor based on the metal substrate in the use process under the high-temperature environment is ensured.
Drawings
The present invention will be further explained with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of embodiment 5 of the present invention;
fig. 2 is a schematic top view of embodiment 5 of the present invention.
In the figure: 1. metal substrate layer, 2, adhesive linkage, 3, first insulating layer, 4, first isolation layer, 5, second insulating layer, 6, protective layer, 7, sensor circuit layer, 8, second isolation layer, 9, second protective layer, 10, pad.
Detailed Description
Example 1
A film sensor insulating layer composite structure based on a metal substrate comprises a metal substrate layer 1, an adhesive layer 2 arranged on the metal substrate layer, a first insulating layer 3 arranged on the adhesive layer 2, a first isolating layer 4 arranged on the first insulating layer 3, a second insulating layer 5 arranged on the first isolating layer 4, and a sensor circuit layer 7 arranged on the second insulating layer 5.
Example 2
Preferably, the bonding layer 2 is a metallic titanium layer or a metallic chromium layer deposited on the metal substrate and having a thickness of 5-50 nm.
The first insulating layer 3 is an alumina layer with the thickness of 0.2-5 um deposited on the bonding layer 2.
The first isolation layer 4 is a silicon nitride layer deposited on the first insulation layer 3 and having a thickness of 0.5-5 um.
The second insulating layer 5 is an alumina layer deposited on the first isolating layer 4 and having a thickness of 0.2-5 um.
Example 3
Preferably, the second insulating layer 5 and the sensor circuit layer 7 are covered with a protective layer 6.
The protective layer 6 is an alumina layer with the thickness of 0.2-5 um deposited on the second insulating layer 5, and the alumina layer does not cover the bonding pad 10 of the sensor circuit layer.
The protective layer 6 serves to protect the sensor circuit layer from external scratches, abrasion, and other damages, and also has a certain insulating ability.
Example 4
As a further preferred design of embodiment 3, the protective layer 6 is further provided with a second isolation layer 8, the second isolation layer 8 is a silicon nitride layer deposited on the protective layer and having a thickness of 0.5 to 5 um, and the silicon nitride layer does not cover the pad 10 of the sensor circuit layer.
The second isolation layer 8 is used for covering the pinholes in the protection layer 6, so that when the sensor protection layer contacts metal, short circuit between a sensor circuit and the metal still can not occur, and the mechanical strength of the whole protection layer is also increased. The second isolation layer 8 also functions as a protective layer.
Example 5
As a further preferable design of embodiment 4, as shown in fig. 1 and 2, a second protective layer 9 is further disposed on the second isolation layer 8, the second protective layer 9 is an aluminum oxide layer deposited on the second isolation layer and having a thickness of 0.2 to 5 um, and the aluminum oxide layer does not cover the pad 10 of the sensor circuit layer.
The second protective layer 9 serves to further increase the insulating ability and mechanical strength of the protective layer against the external harsh conditions.
Example 6
The preparation process of the thin film sensor insulating layer composite structure based on the metal substrate comprises the following steps:
cleaning a metal substrate by acetone, isopropanol and deionized water, and drying by nitrogen to finish substrate preparation;
depositing a 5-50 nm metal titanium (Ti) layer on the metal substrate through a sputtering process (sputtering) for improving the adhesion between a subsequent insulating layer and the metal substrate;
step three, passing electronsDepositing a layer of 0.2-5 um aluminum oxide (Al) on the metal titanium (Ti) layer by using an E-beam evaporation process2O3) An insulating layer;
step four, performing Plasma Enhanced Chemical Vapor Deposition (PECVD) on aluminum oxide (Al)2O3) Depositing a layer of 0.5-5 um silicon nitride (Si) on the insulating layer3N4) An isolation layer;
depositing an aluminum oxide insulating layer of 0.2-5 um on the silicon nitride isolating layer by an electron beam evaporation process;
sixthly, depositing a sensor circuit layer on the alumina insulating layer through photoetching, sputtering, stripping and other processes;
depositing a 0.2-5 um aluminum oxide protective layer on the region except the bonding pad of the sensor circuit layer by an electron beam evaporation process by using a metal mask, wherein the bonding pad of the sensor circuit is exposed and is not covered by the aluminum oxide protective layer;
depositing a silicon nitride isolation layer of 0.5-5 um on the alumina protective layer by a plasma enhanced chemical vapor deposition process by means of a metal mask, wherein a bonding pad of the sensor circuit is exposed and is not covered by the silicon nitride isolation layer;
and step eight, depositing a 0.2-5 um aluminum oxide protective layer on the silicon nitride isolation layer by means of a metal mask through an electron beam evaporation process, wherein the bonding pad of the sensor circuit is exposed and is not covered by the aluminum oxide protective layer.
The structure not only solves the problem of aluminum oxide (Al) which is deposited by adopting electron beam evaporation (E-beam evaporation) only2O3) The silicon nitride (Si) serving as an insulating layer is easy to generate pinholes (pin holes) and cannot realize the insulating function, and simultaneously, the silicon nitride (Si) deposited by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) process is solved3N4) The insulating material is easy to react with a metal substrate under high-temperature use conditions to cause the problem of insulation failure.
Selection of materials for the insulating layers in the composite structure, e.g. aluminium oxide (Al)2O3) And nitrogenSilicon (Si)3N4). The material chosen for such composite structures must satisfy two points: (1) the insulating property is strong, namely the breakdown field strength is high, otherwise, the insulating property is easily reduced or even lost under the high-temperature condition; (2) the thermal expansion coefficients of the insulating layers are close to those of the metal substrate, and cannot be different too much, and the thermal expansion coefficients are close to each other, which may cause the insulating layers to crack under high temperature conditions to reduce the insulating performance.
The silicon nitride insulating layer of the utility model is not contacted with the metal substrate, thereby avoiding the possibility of reaction with the metal substrate in high temperature environment; meanwhile, although a pin hole (pin hole) exists in the aluminum oxide insulating layer, the pin hole is blocked due to the isolation of the middle silicon nitride insulating layer, so that short circuit between the sensor circuit layer and the metal substrate is avoided, and the insulating capability of the thin film sensor based on the metal substrate in the use process in a high-temperature environment is ensured.
Can realize silicon nitride (Si) under high temperature condition3N4) The insulating layer is made of silicon nitride (Si) at high temperature3N4) The insulating layer reacts with the metal substrate to cause insulation failure; can realize alumina (Al)2O3) Used as an insulating layer in a high-temperature environment, even alumina (Al)2O3) Pinholes (pin holes) exist in the insulating layer, and the insulating function can not fail by adopting the structure of the invention.
Above-mentioned embodiment is only as right the utility model discloses technical scheme's explanation can not be as right the utility model discloses technical scheme's restriction, all are in the utility model discloses simple improvement on the basis all belongs to the utility model discloses a protection scope.
Claims (8)
1. The utility model provides a film sensor insulating layer composite construction based on metal substrate which characterized in that: the sensor comprises a metal substrate layer, an adhesive layer arranged on the metal substrate layer, a first insulating layer arranged on the adhesive layer, a first isolating layer arranged on the first insulating layer, a second insulating layer arranged on the first isolating layer, a sensor circuit layer arranged on the second insulating layer, and a protective layer which is covered or uncovered on the second insulating layer and the sensor circuit layer.
2. The metal substrate-based thin film sensor insulator layer composite structure of claim 1, wherein: the bonding layer is a metal titanium layer with the thickness of 5-50 nm deposited on the metal substrate.
3. The metal substrate-based thin film sensor insulator layer composite structure of claim 1, wherein: the first insulating layer is an alumina layer with the thickness of 0.2-5 um deposited on the bonding layer.
4. The metal substrate-based thin film sensor insulator layer composite structure of claim 1, wherein: the first isolation layer is a silicon nitride layer which is deposited on the first insulation layer and is 0.5-5 um thick.
5. The metal substrate-based thin film sensor insulator layer composite structure of claim 1, wherein: the second insulating layer is an alumina layer deposited on the first isolating layer and having a thickness of 0.2-5 um.
6. The metal substrate-based thin film sensor insulator layer composite structure of claim 1, wherein: the protective layer is an alumina layer with the thickness of 0.2-5 um deposited on the second insulating layer, and the alumina layer does not cover the bonding pad of the sensor circuit layer.
7. The metal substrate-based thin film sensor insulator layer composite structure of claim 6, wherein: still be provided with the second isolation layer on the protective layer, the second isolation layer is the deposited silicon nitride layer of thickness 0.5 ~ 5 um on the protective layer, and the pad on sensor circuit layer is not covered to the silicon nitride layer.
8. The metal substrate-based thin film sensor insulator layer composite structure of claim 7, wherein: still be provided with the second protective layer on the second isolation layer, the second protective layer is the deposited 0.2 ~ 5 um thick aluminium oxide layer on the second isolation layer, and the pad on sensor circuit layer is not covered to the aluminium oxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120316005.0U CN214046190U (en) | 2021-02-04 | 2021-02-04 | Film sensor insulating layer composite structure based on metal substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120316005.0U CN214046190U (en) | 2021-02-04 | 2021-02-04 | Film sensor insulating layer composite structure based on metal substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214046190U true CN214046190U (en) | 2021-08-24 |
Family
ID=77348468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120316005.0U Active CN214046190U (en) | 2021-02-04 | 2021-02-04 | Film sensor insulating layer composite structure based on metal substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214046190U (en) |
-
2021
- 2021-02-04 CN CN202120316005.0U patent/CN214046190U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20190092579A (en) | Thin film packaging structure, manufacturing method thereof and display device having same | |
| CN112601368A (en) | Film sensor insulating layer composite structure based on metal substrate | |
| CN214046190U (en) | Film sensor insulating layer composite structure based on metal substrate | |
| CN214046208U (en) | Insulating layer structure of film sensor based on metal substrate | |
| CN112601390A (en) | Insulating layer structure of film sensor based on metal substrate | |
| US5821174A (en) | Passivation layer of semiconductor device and method for forming the same | |
| CN214173409U (en) | Embedded thin film sensor structure based on ceramic substrate | |
| JP2836474B2 (en) | Magnetoresistive element and manufacturing method thereof | |
| US4686559A (en) | Topside sealing of integrated circuit device | |
| CN101311802A (en) | Silicon based LCD device, silicon based LCD device reflector and manufacture method | |
| CN112601354A (en) | Embedded film sensor | |
| US20020155719A1 (en) | Semiconductor device and manufacturing method thereof | |
| JPH05249061A (en) | Gas sensor and manufacture thereof | |
| CN214797457U (en) | Embedded piezoelectric sensor based on metal substrate | |
| US5788767A (en) | Method for forming single sin layer as passivation film | |
| JPS61140185A (en) | Manufacture of josephson ic | |
| JPH0237747A (en) | Manufacture of semiconductor device | |
| JPH03161932A (en) | Structure of surface protective film of semiconductor device and forming method of same surface protective film | |
| CN212676237U (en) | Multilayer medium isolation structure | |
| KR100702301B1 (en) | Method for forming fuse box of semiconductor devices | |
| JPS6097680A (en) | Manufacture of photoelectric conversion element | |
| JPS63164344A (en) | Semiconductor device | |
| JPH09186067A (en) | Transmission mask for charged beam gang exposure | |
| CN101106097A (en) | Semiconductor part with protective compound layer and its making method | |
| CN101399213A (en) | Method for making metal pad capable of enhancing performance |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |