CN112601390A - Insulating layer structure of film sensor based on metal substrate - Google Patents

Insulating layer structure of film sensor based on metal substrate Download PDF

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Publication number
CN112601390A
CN112601390A CN202110152966.7A CN202110152966A CN112601390A CN 112601390 A CN112601390 A CN 112601390A CN 202110152966 A CN202110152966 A CN 202110152966A CN 112601390 A CN112601390 A CN 112601390A
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layer
insulating layer
metal substrate
protective layer
aluminum oxide
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CN202110152966.7A
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Chinese (zh)
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曹建峰
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Individual
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • H05K1/186—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or connecting to patterned circuits before or during embedding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/26—Cleaning or polishing of the conductive pattern

Abstract

The invention discloses an insulating layer structure of a film sensor based on a metal substrate, which comprises a metal substrate layer, an adhesive layer arranged on the metal substrate layer, an insulating layer arranged on the adhesive layer, and a sensor circuit layer arranged on the insulating layer, wherein the insulating layer is formed by depositing alumina layer by layer in different processes in different times. According to the invention, the aluminum oxide insulating layer is rapidly manufactured by using the electron beam evaporation process, and the aluminum oxide insulating layer prepared by using the step coverage capability of the atomic layer stacking process can cover the pinholes in the aluminum oxide insulating layer manufactured by using the electron beam evaporation process, so that short circuit between the sensor circuit layer and the metal substrate can be avoided; meanwhile, the thickness of the aluminum oxide insulating layer manufactured by the atomic layer stacking process is 10-500nm, so that a large amount of time and cost cannot be generated; the invention has simple structure, and solves the problem of short circuit when the film sensor based on the metal substrate is used under the condition of high temperature environment on the premise of not increasing time and cost.

Description

Insulating layer structure of film sensor based on metal substrate
Technical Field
The invention relates to an insulating layer structure of a thin film sensor based on a metal substrate, and belongs to the technical field of thin film sensors.
Background
With the upgrading of industrial internet and intelligent manufacturing industry, the real-time monitoring of the manufacturing process becomes more and more important, the product quality can be improved and the production efficiency can be improved by acquiring key process parameters in the manufacturing process, problems can be found in advance and timely intervention can be performed, and therefore the occurrence of serious accidents is avoided. The sensor plays an important role in acquiring data such as key process parameters, but the traditional sensor is difficult to approach a point to be measured due to large size, and even if the traditional sensor contacts the point to be measured in different installation modes, the traditional sensor has great damage to the original physical field, so that the detection authenticity is damaged; meanwhile, the traditional sensor has slow response and great hysteresis, so that the requirement of on-site real-time monitoring is difficult to meet. The thin film sensor can provide higher spatial resolution and time resolution by virtue of the characteristics of small size and quick response, so that the field monitoring is more real and timely. However, the conventional thin film sensor based on the silicon substrate is difficult to be applied to the occasions of high temperature, high pressure, large strain and corrosivity due to the defects of brittleness, non-high temperature resistance and the like of the substrate material.
In order to solve the above problems, a thin film sensor based on a metal substrate has been developed, but due to the particularity of the metal substrate, the substrate needs to be polished in a conventional processing environment with low cleanliness, and then transferred to an ultra-clean room for manufacturing the sensor, and the substrate is very likely to have contaminants such as particles, which causes problems in subsequent processes. Such as: in the preparation process of an insulating material aluminum oxide based on a metal substrate film sensor under the condition of a high-temperature environment, a pin hole (pin hole) is easy to appear in an aluminum oxide insulating layer through an electron beam evaporation (E-beam evaporation) process of Physical Vapor Deposition (PVD), so that a short circuit exists between a sensor circuit layer and a metal substrate, and insulation failure is caused. The Atomic Layer Deposition (ALD) process is used, the covering capability is strong, no pin hole exists in the prepared aluminum oxide insulating layer, but due to the low deposition efficiency of the process, a large amount of time and cost are needed for manufacturing the insulating layer with a certain thickness meeting the requirement of the insulating capability under the high-temperature condition. Therefore, the problems of the prior art are not well solved.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides an insulating layer structure of a metal substrate-based thin film sensor, and provides a novel alumina insulating layer structure on the premise of not increasing time and cost, which is used for solving the problem of short circuit when the metal substrate-based thin film sensor is used under the high-temperature environment condition.
In order to achieve the technical purpose, the invention adopts the technical scheme that: the insulating layer structure of the film sensor based on the metal substrate comprises the metal substrate layer, an adhesive layer arranged on the metal substrate layer, an insulating layer arranged on the adhesive layer and a sensor circuit layer arranged on the insulating layer, wherein the insulating layer is formed by depositing alumina layer by layer in different processes in different times.
The bonding layer is a metal titanium layer or a metal chromium layer with the thickness of 5-50 nm deposited on the metal substrate.
The insulating layer is formed by depositing three layers of aluminum oxide layer by layer in a grading manner, and a protective layer is arranged or not arranged on the insulating layer and the sensor circuit layer; the first layer of the insulating layer is a layer of alumina with the thickness of 0.2-5 um deposited on the bonding layer through electron beam evaporation; the second layer of the insulating layer is a layer of alumina with the thickness of 10-500nm deposited on the first layer through atomic layer accumulation; the third layer of the insulating layer is a layer of alumina with the thickness of 0.2-5 um deposited on the second layer through electron beam evaporation.
The protective layer includes first protective layer, and first protective layer is through the one deck aluminium oxide of deposited thickness 0.2 ~ 5 um of electron beam evaporation on the third layer of insulating layer, and first protective layer does not cover the pad on sensor circuit layer.
The protective layer further comprises a second protective layer, the second protective layer is a layer of alumina deposited on the first protective layer through atomic layer deposition and is 10-500nm thick, and the second protective layer does not cover a bonding pad of the sensor circuit layer.
The protective layer still includes the third protective layer, and the third protective layer is through the one deck aluminium oxide of deposited thickness 0.2 ~ 5 um of electron beam evaporation on the second protective layer, and the pad on sensor circuit layer is not covered to the third protective layer.
The insulating layer structure of the film sensor based on the metal substrate comprises the following preparation process steps:
cleaning a metal substrate by acetone, isopropanol and deionized water, and drying by nitrogen to finish substrate preparation;
depositing a 5-50 nm metal titanium (Ti) layer on the metal substrate through a sputtering process (sputtering) for improving the adhesion between a subsequent insulating layer and the metal substrate;
depositing a layer of 0.2-5 um aluminum oxide (Al) on the metal titanium (Ti) layer by an electron beam evaporation process (E-beam evaporation)2O3) An insulating layer;
depositing a 10-500nm aluminum oxide insulating layer on the aluminum oxide insulating layer deposited in the previous step by an Atomic Layer Deposition (ALD) process;
depositing an aluminum oxide insulating layer of 0.2-5 um on the insulating layer in the fourth step by an electron beam evaporation process;
depositing a sensor circuit layer on the alumina insulating layer through photoetching, sputtering and stripping processes;
depositing a 0.2-5 um aluminum oxide protective layer on the region except the bonding pad of the sensor circuit layer by an electron beam evaporation process by means of a metal mask;
depositing a 10-500nm aluminum oxide protective layer on the aluminum oxide protective layer deposited in the previous step through an atomic layer stacking process by means of a metal mask, wherein a bonding pad of the sensor circuit is exposed and is not covered by the protective layer;
and step nine, depositing a 0.2-5 um aluminum oxide protective layer on the eight protective layers by an electron beam evaporation process by means of a metal mask, wherein the bonding pad of the sensor circuit is exposed and is not covered by the aluminum oxide protective layer.
The beneficial technical effects of the invention are as follows: an electron beam evaporation process is utilized to rapidly manufacture an aluminum oxide insulating layer, the aluminum oxide insulating layer prepared by means of the step covering capability of the atomic layer stacking process can cover the pin hole, and short circuit between the sensor circuit layer and the metal substrate is ensured not to occur; meanwhile, the thickness of the aluminum oxide insulating layer manufactured by the atomic layer stacking process is 10-500nm, so that a large amount of time and cost cannot be generated; the invention has simple structure, and solves the problem of short circuit when the film sensor based on the metal substrate is used under the condition of high temperature environment on the premise of not increasing time and cost.
Drawings
The invention is further described below with reference to the accompanying drawings.
FIG. 1 is a schematic structural diagram of example 5 of the present invention;
fig. 2 is a schematic top view of embodiment 5 of the present invention.
In the figure: 1. metal substrate layer, 2, titanium metal layer, 3, insulating layer, 31, first layer, 32, second layer, 33, third layer, 34, first protective layer, 35, second protective layer, 36, third protective layer, 4, sensor circuit layer, 5, pad.
Detailed Description
Example 1
The insulating layer structure of the film sensor based on the metal substrate comprises a metal substrate layer 1, an adhesive layer 2 arranged on the metal substrate layer, an insulating layer 3 arranged on the adhesive layer, and a sensor circuit layer 4 arranged on the insulating layer 3, wherein the insulating layer 3 is formed by depositing alumina layer by layer in different processes in different times.
Example 2
As a preferable design, the bonding layer 2 is a metal titanium layer deposited on the metal substrate and having a thickness of 5-50 nm.
The insulating layer 3 is formed by depositing three layers of aluminum oxide layer by layer in a grading manner.
The first layer 31 of the insulating layer 3 is a layer of alumina with the thickness of 0.2-5 um deposited on the titanium metal layer through electron beam evaporation.
The second layer 32 of the insulating layer 3 is a layer of alumina deposited on the first insulating layer 31 by atomic layer deposition and having a thickness of 10-500 nm.
The third layer 33 of the insulating layer 3 is a layer of alumina with a thickness of 0.2-5 um deposited on the second insulating layer 32 by electron beam evaporation.
Example 3
As a preferred configuration, a protective layer may also be provided on top of the insulating layer 3. The first protective layer 34 is a layer of alumina with a thickness of 0.2 to 5 um deposited on the third insulating layer 33 by electron beam evaporation, and does not cover the pad 5 of the sensor circuit layer.
The first protective layer 34 serves to protect the sensor circuit layer from external damage such as scratches and abrasion, and also has a certain insulating ability.
Example 4
As a preferable design for embodiment 3, the protective layer is provided in two layers, the second protective layer 35 is a layer of alumina deposited by atomic layer deposition on the first protective layer 34 and having a thickness of 10 to 500nm, and the second protective layer does not cover the pad 5 of the sensor circuit layer.
The second protective layer 35 serves to cover the pin holes in the first protective layer 34, so that when the sensor protective layer contacts the metal, short circuit between the sensor circuit and the metal does not occur, and the mechanical strength of the entire protective layer is also increased.
Example 5
As shown in fig. 1 and 2, as a preferred design for embodiment 4, the protective layer in this embodiment is provided with three layers. The third protective layer 36 is a layer of alumina with a thickness of 0.2-5 um deposited on the second protective layer 35 by electron beam evaporation, and the third protective layer does not cover the pad 5 of the sensor circuit layer.
The third protective layer 36 serves to further increase the insulating ability and mechanical strength of the protective layer against the external severe conditions.
Example 6
The preparation process of the insulating layer structure of the film sensor based on the metal substrate comprises the following steps:
cleaning a metal substrate by acetone, isopropanol and deionized water, and drying by nitrogen to finish substrate preparation;
depositing a 5-50 nm metal titanium (Ti) layer on the metal substrate through a sputtering process (sputtering) for improving the adhesion between a subsequent insulating layer and the metal substrate;
depositing a layer of 0.2-5 um titanium (Ti) on the metal titanium (Ti) layer by an electron beam evaporation process (E-beam evaporation)Alumina (Al)2O3) An insulating layer;
depositing a 10-500nm aluminum oxide insulating layer on the aluminum oxide insulating layer deposited in the previous step by an Atomic Layer Deposition (ALD) process;
depositing an aluminum oxide insulating layer of 0.2-5 um on the insulating layer in the fourth step by an electron beam evaporation process;
depositing a sensor circuit layer on the alumina insulating layer through photoetching, sputtering and stripping processes;
depositing a 0.2-5 um aluminum oxide protective layer on the area except the sensor circuit pad by an electron beam evaporation process by means of a metal mask;
depositing a 10-500nm aluminum oxide protective layer on the aluminum oxide protective layer deposited in the previous step through an atomic layer stacking process by means of a metal mask, wherein a bonding pad of the sensor circuit is exposed and is not covered by the protective layer;
and step nine, depositing a 0.2-5 um aluminum oxide protective layer on the eight protective layers by an electron beam evaporation process by means of a metal mask, wherein the bonding pad of the sensor circuit is exposed and is not covered by the aluminum oxide protective layer.
In the above process, although there may be a pinhole (pin hole) in the alumina (Al 2O 3) insulating layer fabricated by the electron beam evaporation (E-beam evaporation), the pinhole (pin hole) may be covered by the alumina insulating layer fabricated by the Atomic Layer Deposition (ALD) process with a strong step coverage capability, thereby ensuring that no short circuit occurs between the sensor circuit layer and the metal substrate. Meanwhile, the thickness (10-500 nm) of the aluminum oxide insulating layer or the aluminum oxide protective layer manufactured by the Atomic Layer Deposition (ALD) process is also in a normal range, and a large amount of time and cost cannot be generated.
The invention does not exclude the use value of the alumina insulation layer prepared by the electron beam evaporation process due to the existence of the pinholes, and even if the pinholes exist in the alumina insulation layer prepared by the electron beam evaporation process, the insulation can be realized due to the coverage of the alumina prepared by the atomic layer stacking process; so that the alumina insulating layer prepared by the electron beam evaporation process plays a due role in the preparation of the thin film sensor based on the metal substrate.
The method solves the problems of long time and high cost for depositing an insulating layer with enough thickness by an atomic layer stacking process in order to meet the use requirement under the high-temperature condition. The insulating layer deposited by the atomic layer deposition process is mainly used for covering pinholes in the alumina insulating layer prepared by the electron beam evaporation process and does not need to be deposited to the thickness same as that of the alumina insulating layer prepared by the electron beam evaporation process.
The invention has three key innovation points: the insulating layer structure solves the problem that the insulating function can not be realized because the aluminum oxide which is simply subjected to electron beam evaporation deposition is taken as the insulating layer and pinholes are easy to appear. Meanwhile, the problems of a large amount of time and cost for depositing an insulating layer with a certain thickness by only adopting atomic layer deposition under the condition of meeting high temperature are solved. The thickness of 10-500nm for depositing alumina by atomic layer deposition is within the normal range and is acceptable; the preparation environment temperature of the insulating layers is low, the preparation of the two insulating layers is carried out in the environment below 200 ℃, and the physical properties such as strength and the like of the sensor circuit and the metal substrate are not reduced; the insulating layer materials in the structure are all alumina, so that the defect that the insulating property of different insulating materials is influenced by cracks between layers due to different thermal expansion coefficients is avoided.
The above embodiments are only used for explaining the technical solution of the present invention, and are not used for limiting the technical solution of the present invention, and all the simple modifications based on the present invention belong to the protection scope of the present invention.

Claims (10)

1. An insulating layer structure of a film sensor based on a metal substrate is characterized in that: the sensor comprises a metal basal layer, an adhesive layer arranged on the metal basal layer, an insulating layer arranged on the adhesive layer and a sensor circuit layer arranged on the insulating layer, wherein the insulating layer is formed by depositing alumina layer by layer in different processes.
2. The insulating layer structure of the metal substrate-based thin film sensor according to claim 1, wherein: the bonding layer is a metal titanium layer or a metal chromium layer with the thickness of 5-50 nm deposited on the metal substrate.
3. The insulating layer structure of the metal substrate-based thin film sensor according to claim 1, wherein: the insulating layer is formed by depositing three layers of aluminum oxide layer by layer in a grading manner, and a protective layer is arranged or not arranged on the insulating layer and the sensor circuit layer.
4. The insulating layer structure of the metal substrate-based thin film sensor according to claim 3, wherein: the first layer of the insulating layer is a layer of alumina with the thickness of 0.2-5 um deposited on the bonding layer through electron beam evaporation.
5. The insulating layer structure of the metal substrate-based thin film sensor according to claim 3, wherein: the second layer of the insulating layer is a layer of alumina with the thickness of 10-500nm deposited on the first layer through atomic layer accumulation.
6. The insulating layer structure of the metal substrate-based thin film sensor according to claim 3, wherein: the third layer of the insulating layer is a layer of alumina with the thickness of 0.2-5 um deposited on the second layer through electron beam evaporation.
7. The insulating layer structure of the metal substrate-based thin film sensor according to claim 3, wherein: the protective layer includes first protective layer, and first protective layer is through the one deck aluminium oxide of deposited thickness 0.2 ~ 5 um of electron beam evaporation on the third layer of insulating layer, and first protective layer does not cover the pad on sensor circuit layer.
8. The insulating layer structure of the metal substrate-based thin film sensor according to claim 7, wherein: the protective layer further comprises a second protective layer, the second protective layer is a layer of alumina deposited on the first protective layer through atomic layer deposition and is 10-500nm thick, and the second protective layer does not cover a bonding pad of the sensor circuit layer.
9. The insulating layer structure of the metal substrate-based thin film sensor according to claim 8, wherein: the protective layer still includes the third protective layer, and the third protective layer is through the one deck aluminium oxide of deposited thickness 0.2 ~ 5 um of electron beam evaporation on the second protective layer, and the pad on sensor circuit layer is not covered to the third protective layer.
10. The insulating layer structure of the metal substrate-based thin film sensor according to claim 1, wherein the preparation steps are as follows:
cleaning a metal substrate by acetone, isopropanol and deionized water, and drying by nitrogen to finish substrate preparation;
depositing a 5-50 nm metal titanium layer on the metal substrate through a sputtering process, wherein the titanium layer is used for improving the adhesion between a subsequent insulating layer and the metal substrate;
depositing an alumina insulating layer of 0.2-5 um on the metal titanium layer by an electron beam evaporation process;
depositing a 10-500nm aluminum oxide insulating layer on the aluminum oxide insulating layer deposited in the previous step through an atomic layer stacking process;
depositing an aluminum oxide insulating layer of 0.2-5 um on the insulating layer in the fourth step by an electron beam evaporation process;
depositing a sensor circuit layer on the alumina insulating layer through photoetching, sputtering and stripping processes;
depositing a 0.2-5 um aluminum oxide protective layer on the region except the bonding pad of the sensor circuit layer by an electron beam evaporation process by means of a metal mask;
depositing a 10-500nm aluminum oxide protective layer on the aluminum oxide protective layer deposited in the previous step through an atomic layer stacking process by means of a metal mask, wherein a bonding pad of the sensor circuit is exposed and is not covered by the protective layer;
and step nine, depositing a 0.2-5 um aluminum oxide protective layer on the eight protective layers by an electron beam evaporation process by means of a metal mask, wherein the bonding pad of the sensor circuit is exposed and is not covered by the aluminum oxide protective layer.
CN202110152966.7A 2021-02-04 2021-02-04 Insulating layer structure of film sensor based on metal substrate Pending CN112601390A (en)

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CN202110152966.7A CN112601390A (en) 2021-02-04 2021-02-04 Insulating layer structure of film sensor based on metal substrate

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Application Number Priority Date Filing Date Title
CN202110152966.7A CN112601390A (en) 2021-02-04 2021-02-04 Insulating layer structure of film sensor based on metal substrate

Publications (1)

Publication Number Publication Date
CN112601390A true CN112601390A (en) 2021-04-02

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