CN202359191U - Clamp ring device of physical vapor deposition equipment - Google Patents
Clamp ring device of physical vapor deposition equipment Download PDFInfo
- Publication number
- CN202359191U CN202359191U CN2011202939694U CN201120293969U CN202359191U CN 202359191 U CN202359191 U CN 202359191U CN 2011202939694 U CN2011202939694 U CN 2011202939694U CN 201120293969 U CN201120293969 U CN 201120293969U CN 202359191 U CN202359191 U CN 202359191U
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- ring
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- ring device
- pressure ring
- pvd equipment
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Abstract
The utility model provides a clamp ring device of physical vapor equipment, including an annular body; at least one extension strip, which is fixedly disposed on an annular surface of the annular body and parallel to a plane where the annular body is positioned; and at least three protruding bodies, which are fixedly connected to an inner ring edge of the annular body and located on the same plane where the annular body is positioned. Compared with the prior art, parts are added on the inner ring of the annular body of the clamp ring device, the parts including at least one extension strip and at least three protruding bodies. Only the protruding bodies of the clamp ring device are in contact with a wafer, which decreases a contact area of the clamp ring device and the wafer, thus reducing phenomena of bonding. A position of the extension strip corresponds to an alignment mark of the wafer, and the alignment mark of the wafer being filled by deposits during a process of physical vapor deposition is blocked, and a problem of discrimination failure of the alignment mark, which is caused by the alignment mark of the wafer being filled by deposits, is further prevented.
Description
Technical field
The utility model relates to a kind of Pvd equipment, relates in particular to a kind of pressure ring device that can prevent the Pvd equipment of bonding die phenomenon.
Background technology
Metallization process is in chip manufacturing proces, depositing metal film on the dielectric film, and photoetching subsequently and etching form figure, and in figure, fill the process of the through hole that forms interconnected metal wire and unicircuit.In metallization process, aluminium is widely used in semiconductor technology as traditional interconnecting lead.
Physical vaporous deposition is the main method that deposit forms aluminum interconnecting in the semiconductor technology processing procedure; Its ultimate principle is in process cavity, to form plasma environment; Gaseous ion argon bombardment target with positively charged is directly passed to target atom (that is deposited material) to kinetic energy; Thereby target atom is overflowed, be deposited on the physical and chemical process on the wafer substrate material.The gaseous ion argon constantly bombards target atom, and target atom constantly is deposited on the wafer substrate material, in this process, can produce a large amount of heats, can cause process cavity to heat up.
In some processing procedures of physical vapor deposition aluminium interconnection line, owing to require big electric current to pass through, top layer aluminium interconnecting lead need be thickeied to 3～4 microns.Because aluminium is in the cavity of the high galvanic current of high temperature, to carry out sputter; When the process cavity running hours; Powerful plasma body (Plasma) can produce a large amount of heat; Cause the component of cavity, especially with pressure ring (Clamp Ring) device busy that wafer directly contacts in temperature continue to raise.Because the pressure ring device directly contacts with wafer; And both materials are different, and thermal expansivity differs that big (pressure ring is a stainless steel, and the coefficient of expansion is 14.4～16.0PPM/ ℃; Wafer is a silicon; The coefficient of expansion is 3.0PPM/ ℃), simultaneously the interior ring of pressure ring device contacts with the outer of wafer, under the high-power environment of high temperature, may cause because of the expansion amplitude difference to cause the bonding die phenomenon.Simultaneously, softening appears again in the aluminium that is formed on the wafer substrate, even the local phenomenon that thawing is arranged.If above-mentioned aluminium softening even that melt just in time is plated to the place that pressure ring contacts with wafer, the bonding die phenomenon will take place.For the wafer that bonding die has taken place, the lighter causes the yield of this wafer to reduce, and weight person causes the fragment of wafer.And the process cavity for bonding die takes place must quit work, and maintain and change component, has caused shortening the mean time between failures (MTBF) of equipment, has reduced the availability (Up time) of equipment, has directly influenced production schedule.
In addition,, on wafer, form a small gap or little groove usually, be referred to as alignment mark (Alignment Mark) for the accurate aligning of each technology in the semiconductor technology.In processes of physical vapor deposition; Physical gas-phase deposition (for example aluminium depositing technics) needs deposit 3～4 micron thick sometimes; Thicker deposited material (for example aluminium) can fill up the alignment mark of wafer; The alignment mark of wafer can't be distinguished, cause follow-up technologies such as photoetching can't accomplish normal technological process because of being difficult to aim at.
The utility model content
The problem that the utility model will solve provides a kind of pressure ring device of Pvd equipment, to reduce the bonding die phenomenon, avoids simultaneously depositing and fills up the alignment mark that gets into wafer and the problem that can't distinguish.
For addressing the above problem, the utility model provides a kind of pressure ring device of Pvd equipment, comprising: ring body; At least one stretches out bar, is fixedly set on the annular surface of said ring body, with the plane parallel at said ring body place; And at least three bossy bodies, be fixedly connected with the interior ring edge of said ring body, and be positioned on the same plane with said ring body.
Optional, said stretch out bar be shaped as ellipse or rectangle.
Optional, said bossy body be shaped as trapezoidal or rectangle.
Preferable, the said bar that stretches out is two, said bossy body is four.
Preferable, said two are stretched out the two ends that bar lays respectively at a diameter of ring in the ring body.
Preferable, said four bossy bodies are distributed on the interior ring edge of said ring body symmetrically.
Further, said pressure ring device also comprises guard ring, and said guard ring is fixedly connected with the outer shroud edge of said ring body, is fixed angle with plane, said ring body place.
Further, the scope of said fixed angle is 0～90 °.
Further, said guard ring, said bar, said bossy body and the said ring body of stretching out are formed in one.
Preferable, said length of stretching out bar is 5～15mm.
Further, the interior ring diameter of said ring body is 4～12 inches.
Preferable, the material of said pressure ring device is stainless steel or titanium.
The pressure ring device compared with prior art increases parts in the utility model on the interior ring of the annular body of pressure ring device, comprises that at least one stretches out bar and at least three bossy bodies.During work, the pressure ring device only has bossy body to contact with wafer, has reduced the contact area of pressure ring device and wafer, and then reduces the generation of bonding die phenomenon.Simultaneously; Said position of stretching out bar is corresponding with the alignment mark of wafer; When pressure ring device pressure is located at the wafer top, stretch out the top that bar 2 can be positioned at the alignment mark of wafer, stop that deposited material in the processes of physical vapor deposition (for example aluminium) is filled into the alignment mark of wafer; And then avoided making its problem that can't distinguish, and then protected the proper alignment of wafer in the subsequent optical carving technology because of deposited material in the processes of physical vapor deposition deposits the alignment mark that is full of wafer.In addition, on annular body, increase guard ring, be convenient to pressure ring Unit Installation and dismounting, avoid polluting wafer.
Description of drawings
Fig. 1 is the vertical view of the pressure ring device of Pvd equipment among the utility model one embodiment.
Fig. 2 is the side-view of the pressure ring device of Pvd equipment among the utility model one embodiment.
Embodiment
For the content that makes the utility model is clear more understandable,, the content of the utility model is described further below in conjunction with Figure of description.Certainly the utility model is not limited to this specific embodiment, and the general replacement that those skilled in the art knew also is encompassed in the protection domain of the utility model.
Secondly, the utility model utilizes synoptic diagram to carry out detailed statement, and when the utility model instance was detailed, for the ease of explanation, synoptic diagram did not amplify according to general ratio is local, should be with this as the qualification to the utility model.
The utility model provides a kind of pressure ring device of physical vapor deposition, is used for physical vapor deposition, especially is directed against the physical vapor deposition of aluminum interconnecting.The material of said pressure ring device can be metal, for example is stainless steel or titanium.Metal stainless steel or titanium fixed in shape, physical strength is high, and is not yielding under hot conditions, and can not produce contaminating impurity to wafer.Wherein the preferable material of pressure ring device is the lower titanium of the coefficient of expansion (coefficient of expansion of titanium is 10.8PPM/ ℃), and the titanium that the coefficient of expansion is low is out of shape little under hot conditions, can better contact with wafer.
Fig. 1 is the vertical view of the pressure ring device of Pvd equipment among the utility model one embodiment, and is as shown in Figure 1, and said pressure ring device comprises: ring body 1, and at least one stretches out bar 2 and at least three bossy bodies 3; Saidly stretch out bar 2 and be fixedly set on the annular surface of said ring body 1, and with the plane parallel at said ring body 1 place, said bossy body 3 is fixedly connected with the interior ring edge of said ring body 1, and is positioned on the same plane with said ring body 1.
In the present embodiment, the interior ring diameter of said ring body 1 equals the diameter of said wafer, so the physical size of the interior ring diameter of said ring body 1 is confirmed according to the wafer size that reality adopts.To 4～12 inches wafer common in the semiconductor technology, the preferable scope of the interior ring diameter of said ring body 1 is 4～12 inches, and for the wafer of other sizes, the size of the interior ring diameter of said ring body 1 can correspondingly change.In addition; In other embodiment; The interior ring diameter of ring body 1 can also be slightly larger than the diameter of wafer, as long as when the pressure ring device is positioned on the said wafer, bossy body 3 can with contact with wafer; And can play the size of the ring body 1 of fixedly wafer effect, all in the thought range of the utility model.
In the present embodiment, said stretching out on the annular surface that bar 2 is fixedly set in said ring body 1, the position is higher than said ring body 1, is used to block the alignment mark of wafer.When pressure ring device pressure is located at the wafer top; To stretch out bar 2 is adjusted to directly over the alignment mark that is positioned at wafer; Can stop in the processes of physical vapor deposition that deposited material is filled enters into alignment mark, avoids being full of the problem that the alignment mark of wafer can't be distinguished it because of deposited material; Therefore, can confirm said length of stretching out bar according to the length of the alignment mark of wafer, scope is at 5mm～15mm, and wherein preferable length is 10mm; In other embodiments; The said bar 2 that stretches out can also be the interior ring edge that is fixedly connected on said ring body 1; And be positioned at conplane position with said ring body 1, when blocking the alignment mark of wafer, substitute the part bossy body and play and the contacted effect of wafer.Said bossy body 3 is used for contacting with wafer, and a plurality of bossy bodies 3 are distributed on the interior ring of ring body 1 equably, helps the power uniform distribution between pressure ring device and the wafer.As shown in Figure 1, in the present embodiment, the pressure ring device comprises that two are stretched out bar 2 and four bossy bodies 3; Stretch out the ellipse that is shaped as of bar 2, bossy body 3 be shaped as rectangle, two to stretch out bar 2 positions symmetrical; Lay respectively on the annular surface of ring body 1, be positioned at the two ends of a diameter of ring, promptly; Like three among Fig. 1 and nine o'clock direction place; Four bossy bodies 3 are distributed on the interior ring edge of ring body 1 symmetrically, that is, and and like the two among Fig. 1, four, seven o'clock and eleven direction place.In addition, said shape and quantity of stretching out bar 2 and bossy body 3 is not limited, and the for example said bar 2 that stretches out can be one or three etc., and its shape can also be for rectangle etc., and said bossy body 3 has three or six etc., and its shape can also be for rectangle etc.; As long as in pressure ring device working process, stretch out the alignment mark that bar 2 can block wafer, the structure of the pressure ring device that bossy body 3 can contact with wafer well is all in the thought range of the utility model.
Fig. 2 is the side-view of the pressure ring device of Pvd equipment among the utility model one embodiment.In conjunction with Fig. 1 and Fig. 2; The pressure ring device also comprises guard ring 4; Said guard ring 4 is fixedly connected on the outer shroud of said ring body 1, and favours said ring body 1, promptly; Be fixed angle a between said set collar 4 and the said annular body 1, the scope of said fixed angle a is smaller or equal to 90 ° greater than 0 °.Said guard ring 4 utilizes extraneous machinery or manpower to pressure ring Unit Installation and dismounting, and the while can reduce extraneous machinery or manpower contacts with annular body 1, pollutes annular body 1, avoids further polluting wafer.In the present embodiment, said guard ring 4, said bar 2, said bossy body 3 and the said ring body 1 of stretching out are formed in one, one-body molded be convenient to make and rugged construction durable.
The pressure ring device compared with prior art increases on the interior ring of the annular body 1 of pressure ring device and comprises that at least one stretches out the parts of bar 2 and at least three bossy bodies 3 in the utility model.When work, the pressure ring device only has bossy body 3 to contact with wafer, has reduced the contact area of pressure ring device and wafer, and then has reduced the generation of bonding die phenomenon.Simultaneously; When pressure ring device pressure is located at the wafer top; Stretch out bar 2 and can be positioned at the alignment mark top of wafer; Stop the alignment mark of deposited material in the processes of physical vapor deposition (for example aluminium) filling wafer, the alignment mark of having avoided being full of wafer because of deposited material makes its problem that can't distinguish, and then has protected the proper alignment of wafer in the subsequent optical carving technology.In addition, on annular body 1, increase guard ring 4, be convenient to pressure ring Unit Installation and dismounting, avoid polluting wafer.
Above embodiment only is illustrative rather than definitive thereof the technical scheme of the utility model, does not break away from any modification or the local modification of the utility model spirit and scope, all should be encompassed in the middle of the claim scope of the utility model.
Claims (12)
1. the pressure ring device of a Pvd equipment is characterized in that, comprising:
Ring body;
At least one stretches out bar, is fixedly set on the annular surface of said ring body, with the plane parallel at said ring body place; And
At least three bossy bodies are fixedly connected with the interior ring edge of said ring body, and are positioned on the same plane with said ring body.
2. the pressure ring device of Pvd equipment as claimed in claim 1 is characterized in that, said stretch out bar be shaped as ellipse or rectangle.
3. the pressure ring device of Pvd equipment as claimed in claim 1 is characterized in that, said bossy body be shaped as trapezoidal or rectangle.
4. the pressure ring device of Pvd equipment as claimed in claim 1 is characterized in that, the said bar that stretches out is two, and said bossy body is four.
5. the pressure ring device of Pvd equipment as claimed in claim 4 is characterized in that, said two are stretched out the two ends that bar lays respectively at a diameter of ring in the ring body.
6. the pressure ring device of Pvd equipment as claimed in claim 4 is characterized in that, said four bossy bodies are distributed in the interior ring edge of said ring body symmetrically.
7. the pressure ring device of Pvd equipment as claimed in claim 1 is characterized in that, also comprises guard ring, and said guard ring is fixedly connected with the outer shroud edge of said ring body, is fixed angle with plane, said ring body place.
8. the pressure ring device of Pvd equipment as claimed in claim 7 is characterized in that, the scope of said fixed angle is 0～90 °.
9. the pressure ring device of Pvd equipment as claimed in claim 7 is characterized in that, said guard ring, said bar, said bossy body and the said ring body of stretching out are formed in one.
10. like the pressure ring device of any described Pvd equipment in the claim 1 to 9, it is characterized in that said length of stretching out bar is 5～15mm.
11. the pressure ring device like any described Pvd equipment in the claim 1 to 9 is characterized in that, the interior ring diameter of said ring body is 4～12 inches.
12. the pressure ring device like any described Pvd equipment in the claim 1 to 9 is characterized in that, the material of said pressure ring device is stainless steel or titanium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202939694U CN202359191U (en) | 2011-08-12 | 2011-08-12 | Clamp ring device of physical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202939694U CN202359191U (en) | 2011-08-12 | 2011-08-12 | Clamp ring device of physical vapor deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202359191U true CN202359191U (en) | 2012-08-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202939694U Expired - Lifetime CN202359191U (en) | 2011-08-12 | 2011-08-12 | Clamp ring device of physical vapor deposition equipment |
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| Country | Link |
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| CN (1) | CN202359191U (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104746024A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deposition method for preventing sparking generation in reaction chamber and reaction chamber thereof |
| CN104851832A (en) * | 2014-02-18 | 2015-08-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Fixing device, reaction cavity and plasma processing device |
| CN105441896A (en) * | 2014-09-17 | 2016-03-30 | 和舰科技(苏州)有限公司 | Clamp ring applied to aluminium-process deposition chamber of metal sputter |
| CN105506570A (en) * | 2014-10-16 | 2016-04-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Compression ring component and physical vapor deposition equipment |
| CN105568244A (en) * | 2014-10-14 | 2016-05-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Physical vapor deposition method |
| CN106282956A (en) * | 2015-05-21 | 2017-01-04 | 汉磊科技股份有限公司 | workpiece holder |
| CN106876316A (en) * | 2015-12-14 | 2017-06-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pressure ring and semiconductor processing equipment |
| CN111793786A (en) * | 2020-06-23 | 2020-10-20 | 重庆中科渝芯电子有限公司 | Shielding ring device for preventing sticking of physical vapor deposition equipment |
-
2011
- 2011-08-12 CN CN2011202939694U patent/CN202359191U/en not_active Expired - Lifetime
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104746024B (en) * | 2013-12-29 | 2017-09-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Prevent the deposition process and reaction chamber struck sparks in reaction chamber |
| CN104746024A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Deposition method for preventing sparking generation in reaction chamber and reaction chamber thereof |
| CN104851832A (en) * | 2014-02-18 | 2015-08-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Fixing device, reaction cavity and plasma processing device |
| CN104851832B (en) * | 2014-02-18 | 2018-01-19 | 北京北方华创微电子装备有限公司 | A kind of fixing device, reaction chamber and plasma processing device |
| CN105441896A (en) * | 2014-09-17 | 2016-03-30 | 和舰科技(苏州)有限公司 | Clamp ring applied to aluminium-process deposition chamber of metal sputter |
| CN105441896B (en) * | 2014-09-17 | 2018-04-10 | 和舰科技(苏州)有限公司 | A kind of fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity |
| CN105568244A (en) * | 2014-10-14 | 2016-05-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Physical vapor deposition method |
| CN105568244B (en) * | 2014-10-14 | 2018-07-06 | 北京北方华创微电子装备有限公司 | A kind of physical gas-phase deposite method |
| CN105506570A (en) * | 2014-10-16 | 2016-04-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Compression ring component and physical vapor deposition equipment |
| CN105506570B (en) * | 2014-10-16 | 2018-11-06 | 北京北方华创微电子装备有限公司 | A kind of pressure ring assembly and Pvd equipment |
| CN106282956A (en) * | 2015-05-21 | 2017-01-04 | 汉磊科技股份有限公司 | workpiece holder |
| WO2017101543A1 (en) * | 2015-12-14 | 2017-06-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Compression ring and semiconductor processing equipment |
| CN106876316A (en) * | 2015-12-14 | 2017-06-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pressure ring and semiconductor processing equipment |
| CN111793786A (en) * | 2020-06-23 | 2020-10-20 | 重庆中科渝芯电子有限公司 | Shielding ring device for preventing sticking of physical vapor deposition equipment |
| CN111793786B (en) * | 2020-06-23 | 2022-06-14 | 重庆中科渝芯电子有限公司 | Shielding ring device for preventing sticking of physical vapor deposition equipment |
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Granted publication date: 20120801 |
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| CX01 | Expiry of patent term |