CN105441896A - Clamp ring applied to aluminium-process deposition chamber of metal sputter - Google Patents
Clamp ring applied to aluminium-process deposition chamber of metal sputter Download PDFInfo
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- CN105441896A CN105441896A CN201410474897.1A CN201410474897A CN105441896A CN 105441896 A CN105441896 A CN 105441896A CN 201410474897 A CN201410474897 A CN 201410474897A CN 105441896 A CN105441896 A CN 105441896A
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- internal diameter
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- shelter
- deposit cavity
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Abstract
A provided clamp ring applied to aluminium-process deposition chamber of a metal sputter comprises a clamp ring body and shielding parts, and the shielding parts are pairwise arranged at two ends of a diameter of a circle at which the inner edge of the clamp ring body is disposed, the internal diameter of the clamping ring body is 192.77 mm-193.05 mm, and the shielding-position internal diameter of the two opposite shielding parts is 190.64 mm-190.94 mm. By arranging the clamp ring in the deposition chamber of the metal sputter, a first layer in 0.35 and H30 metal conductor layers can be produced without specially controlling the power of the deposition chamber, and titanium spalling problem at wafer edge is effectively avoided.
Description
Technical field
The present invention relates to wafer manufacture field, particularly relate to a kind of fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity.
Background technology
Carry out in the course of processing of sputter coating at use metal sputtering machine to wafer, due to 0.35, H30 product crystal edge easily causes product wafer defect because titanium spallation problems forms particulate, this type of resultant metal conductor layer the first layer need use the deposit cavity of the fixture ring that internal diameter is 194mm to produce at metal sputtering board, but uses the deposit cavity of the fixture ring that internal diameter is 194mm can must produce when device power is greater than 200kwh (the normal service cycle is 425kwh).It is complicated that this just causes metal sputtering machine production capacity to be allocated, such as, be less than 200kwh at deposit cavity device power and then cannot produce metal carbonyl conducting layer the first layer product, needs whole shutdown control wafer device power to be gone to more than 200kwh and just can continue to produce.Which results in board complex management.Because board quantity is fixed, the fixture ring that it uses is divided into internal diameter 194mm and 197mm two kinds, can have influence on the quantity of 197mm fixture ring to the quantity of 194mm fixture ring demand, thus affects whole metal sputtering machine production capacity.Need every day in process of production and add up each deposit cavity device power size, be greater than 200kwh and just can open production metal carbonyl conducting layer the first layer product machine limit, result in machine limit complex management.
In sputter process, all parts of inside cavity comprise fixture ring and all can be sputtered to some aluminium films, when deposit cavity device power becomes large gradually, internal diameter is that the aluminium film that the fixture ring edge of 194mm is sputtered to is more and more thicker, fixture ring actual inner diameter then diminishes, and the diameter that wafer can be sputtered to also diminishes.Also larger owing to changing new its internal diameter of fixture ring after maintenance, the wafer pushed down of such fixture ring can the diameter of sputter larger, crystal edge is easier to be sputtered to aluminium film, can cause producing titanium in follow-up flow process and peel off formation particle and produce product defects when plain conductor the first layer is produced at this moment.
Summary of the invention
For above-mentioned problems of the prior art, the invention provides a kind of novel fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity, can produce 0.35 and H30 metal carbonyl conducting layer the first layer effectively prevent the titanium spallation problems of crystal edge without the need to special management and control deposit cavity watt level.To achieve these goals, the technical solution adopted in the present invention is as follows:
A kind of fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity, comprise fixture ring body and shielding portion, described shielding portion is arranged on the two ends of the preglabellar field place circle diameter of described fixture ring body in couples, described fixture ring internal diameter is 192.77mm-193.05mm, and the shelter internal diameter between two relative shielding portions is 190.64mm-190.94mm;
Further, described fixture ring internal diameter is 192.77mm, and described shelter internal diameter is 190.64mm;
Further, described fixture ring internal diameter is 192.77mm, and described shelter internal diameter is 190.94mm;
Further, described fixture ring internal diameter is 193.05mm, and described shelter internal diameter is 190.64mm;
Further, described fixture ring internal diameter is 193.05mm, and described shelter internal diameter is 190.94mm;
Further, described fixture ring internal diameter is 192.80mm, and described shelter internal diameter is 190.80mm.
Beneficial effect acquired by the present invention is:
1. internal diameter required before effectively reducing is the configuration quantity of 194mm fixture ring, need the deposit cavity configuring 7-8 internal diameter 194mm fixture ring to have employed new internal diameter is only need configuration 3-4 after the fixture ring of 192.8mm before, which adds the configuration quantity that internal diameter is the fixture ring of 197mm, facilitate production capacity to allocate and production capacity is maximized, facilitating board management and the management of machine limit.
2. use after new fixture ring, 0.35 can direct production with H30 plain conductor the first layer, and other layers are all produced on 197mm fixture ring, greatly facilitate production capacity allotment, the management of machine limit and maintenance care.
3. use existing fixture ring to need deposit cavity power control wafer to go to 200kwh, have larger waste to aluminium target, after using new fixture ring, greatly can reduce the expense of aluminium target.
Accompanying drawing explanation
Fig. 1 is the structure iron of the fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity of the present invention.
Reference numeral: 1. fixture ring body; 2. shielding portion
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with accompanying drawing, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
As shown in Figure 1, the fixture ring of the deposit cavity used in prior art is made up of fixture ring body 1 and shielding portion 2, described shielding portion is arranged on the two ends of the preglabellar field place circle diameter of described fixture ring body in couples, the internal diameter of fixture ring is 194mm, and the shelter internal diameter between two relative shielding portions is 192mm.When using metal sputtering machine to carry out metal coating to wafer, be 194mm by internal diameter, shelter internal diameter is that multiple fixture rings of 192mm are arranged on the well heater of the high temperature high evenness in deposit cavity, fixture ring pushes down wafer, it is avoided to be blown afloat by back pressure, and its shelter can cover in the edge of wafer and well heater, crystal edge is made not to be sputtered to aluminium film.In order to overcome the defect using the fixture ring of existing 194mm internal diameter cannot produce plain conductor the first layer when service rating is less than 200kwh, start runs and the power in deposit cavity is gone to 200kwh, take off fixture ring and measurement size, add up the internal diameter of each fixture ring and the internal diameter of shielding portion to determine that fixture ring is by the situation of sputter, as shown in table 1:
| Fixture ring (mm) | Completely newly | Fixture ring A | Fixture ring B | Fixture ring C |
| Power (kwh) | 0 | 200 | 200 | 207 |
| Shelter 1 | 192.20 | 190.66 | 190.90 | 190.65 |
| Shelter 2 | 192.28 | 190.68 | 190.91 | 190.70 |
| Shelter 3 | 192.24 | 190.76 | 190.94 | 190.64 |
| Internal diameter 1 | 194.20 | 192.80 | 193.05 | 192.77 |
| Internal diameter 2 | 194.22 | 192.80 | 193.04 | 192.79 |
| Internal diameter 3 | 194.28 | 192.84 | 193.04 | 192.80 |
Table 1
Can see thus, when being approximately 200kwh with power and running, in sputter process, the fixture ring edge sputter of 194mm internal diameter is arrived aluminium film, the internal diameter of fixture ring and the internal diameter of shelter that cause 194mm internal diameter all diminish, wherein fixture ring internal diameter narrows down between 192.77mm-193.05mm, and shelter internal diameter narrows down between 190.64-190.94.
According to these data, in the present invention the internal diameter of new fixture ring is arranged between 192.77mm-193.05mm, and the internal diameter of shelter is arranged between 190.64-190.94, then can avoid power be below 200kwh run time cannot produce the problem of plain conductor the first layer.Run by upper machine and the diameter of fixture ring of the present invention is preferably internal diameter 192.77mm, shelter internal diameter 190.64mm, internal diameter 192.77mm, shelter internal diameter 190.94mm, internal diameter 193.05mm, shelter internal diameter 190.64mm, internal diameter 193.05mm, shelter internal diameter 190.94mm and internal diameter 192.80mm, shelter internal diameter 190.80mm five kinds.
Novel clamp ring of the present invention was tested on board in 2010, its sputter that can carry out plain conductor the first layer when power is below 200kwh is produced, use at present comprehensively, and substitute 194mm fixture ring, aluminum current processing procedure metal sputtering board has all been allocated as novel clamp ring of the present invention, 0.35 can directly produce with H30 resultant metal wire the first layer in the deposit cavity using novel clamp ring of the present invention, and other metal carbonyl conducting layers are all produced in the deposit cavity using 197mm fixture ring.
The above embodiment only have expressed embodiments of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (6)
1. the fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity, comprise fixture ring body and shielding portion, described shielding portion is arranged on the two ends of the preglabellar field place circle diameter of described fixture ring body in couples, it is characterized in that, described fixture ring internal diameter is 192.77mm-193.05mm, and the shelter internal diameter between two relative shielding portions is 190.64mm-190.94mm.
2., as claimed in claim 1 for the fixture ring of metal sputtering machine aluminum manufacturing procedure deposit cavity, it is characterized in that, described fixture ring internal diameter is 192.77mm, and described shelter internal diameter is 190.64mm.
3., as claimed in claim 1 for the fixture ring of metal sputtering machine aluminum manufacturing procedure deposit cavity, it is characterized in that, described fixture ring internal diameter is 192.77mm, and described shelter internal diameter is 190.94mm.
4., as claimed in claim 1 for the fixture ring of metal sputtering machine aluminum manufacturing procedure deposit cavity, it is characterized in that, described fixture ring internal diameter is 193.05mm, and described shelter internal diameter is 190.64mm.
5., as claimed in claim 1 for the fixture ring of metal sputtering machine aluminum manufacturing procedure deposit cavity, it is characterized in that, described fixture ring internal diameter is 193.05mm, and described shelter internal diameter is 190.94mm.
6., as claimed in claim 1 for the fixture ring of metal sputtering machine aluminum manufacturing procedure deposit cavity, it is characterized in that, described fixture ring internal diameter is 192.80mm, and described shelter internal diameter is 190.80mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410474897.1A CN105441896B (en) | 2014-09-17 | 2014-09-17 | A kind of fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410474897.1A CN105441896B (en) | 2014-09-17 | 2014-09-17 | A kind of fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105441896A true CN105441896A (en) | 2016-03-30 |
| CN105441896B CN105441896B (en) | 2018-04-10 |
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| CN201410474897.1A Active CN105441896B (en) | 2014-09-17 | 2014-09-17 | A kind of fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6171453B1 (en) * | 1998-12-02 | 2001-01-09 | Taiwan Semiconductor Manufacturing Co., Ltd | Alignment mark shielding ring and method of using |
| US20030196604A1 (en) * | 2002-04-22 | 2003-10-23 | Stmicroelectronics, Inc. | Padded clamp ring with edge exclusion for deposition of thick AlCu/AlSiCu/Cu metal alloy layers |
| CN101736290A (en) * | 2008-11-19 | 2010-06-16 | 和舰科技(苏州)有限公司 | Method for improving die bonding in process of deposition of aluminum metallic film |
| CN201708142U (en) * | 2010-03-15 | 2011-01-12 | 中芯国际集成电路制造(上海)有限公司 | Wafer placing tray in aluminum metal deposition process |
| CN202359191U (en) * | 2011-08-12 | 2012-08-01 | 上海集成电路研发中心有限公司 | Clamp ring device of physical vapor deposition equipment |
-
2014
- 2014-09-17 CN CN201410474897.1A patent/CN105441896B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6171453B1 (en) * | 1998-12-02 | 2001-01-09 | Taiwan Semiconductor Manufacturing Co., Ltd | Alignment mark shielding ring and method of using |
| US20030196604A1 (en) * | 2002-04-22 | 2003-10-23 | Stmicroelectronics, Inc. | Padded clamp ring with edge exclusion for deposition of thick AlCu/AlSiCu/Cu metal alloy layers |
| CN101736290A (en) * | 2008-11-19 | 2010-06-16 | 和舰科技(苏州)有限公司 | Method for improving die bonding in process of deposition of aluminum metallic film |
| CN201708142U (en) * | 2010-03-15 | 2011-01-12 | 中芯国际集成电路制造(上海)有限公司 | Wafer placing tray in aluminum metal deposition process |
| CN202359191U (en) * | 2011-08-12 | 2012-08-01 | 上海集成电路研发中心有限公司 | Clamp ring device of physical vapor deposition equipment |
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| Publication number | Publication date |
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| CN105441896B (en) | 2018-04-10 |
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