CN106277816B - Coating film production line multistage atmosphere isolation device - Google Patents
Coating film production line multistage atmosphere isolation device Download PDFInfo
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- CN106277816B CN106277816B CN201610616844.8A CN201610616844A CN106277816B CN 106277816 B CN106277816 B CN 106277816B CN 201610616844 A CN201610616844 A CN 201610616844A CN 106277816 B CN106277816 B CN 106277816B
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- atmosphere
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
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- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to a kind of coating film production line multistage atmosphere isolation devices, for the work atmosphere of adjacent two coating chamber to be isolated in coating film production line, the vacuum pump for being connected to setting is corresponded with the isolation ward including at least two successively adjacent and isolation wards being mutually separated with partition and at least two, it is additionally provided with the narrow-gap channel that both ends are respectively communicated with adjacent two isolation ward in the middle part of the partition, the both ends of the channel siding of the two sides up and down of the narrow-gap channel are from the partition definite length extended into two isolation wards that the narrow-gap channel is connected to respectively.The present invention is on traditional air pocket isolation method basis, increase the series of air pocket isolation, also cooperation connects adjacent isolation ward using narrow-gap channel and realizes the better slit isolation of isolation effect simultaneously, to make the gas isolating effect promoting of entire isolating device, the gas isolating demand that high-precision requirement can effectively be met is especially suitable for needing the coating process of the synchronous continuous work of kinds of processes atmosphere such as IMITO.
Description
Technical field
The present invention relates to substrate film coating production technical fields more particularly to a kind of coating film production line multistage gas isolating to fill
It sets.
Background technique
Glass substrate plated film production in, IMITO technique (disappear shadow ITO) by introducing optical film layer (AR film) come so that
The reflectivity that sensor layers of ITO is equal to AR film layer, so that naked eyes can not identify sensor layers of ITO, reaches " disappear shadow "
Effect.IMITO process requirements plating membrane production equipment has SiO2+ ITO connection plating function, still, the SiO in PVD equipment2At
Film atmosphere differs huge with ITO, joins plating function to realize, it is necessary to be equipped with efficient atmosphere isolation device.
There are mainly two types of existing atmosphere isolation devices: rotating room's gentle trap type of (Rotary chamber) isolating device every
From device.Wherein, rotating room's isolating device can play good gas isolating effect, and still, this isolating device is specific to
AR film plated film type, cost are excessively high；And air pocket formula isolating device is although low in cost, still, gas isolating effect is limited, nothing
Method meets the production requirement of IMITO technique.
Summary of the invention
Technical problem to be solved by the present invention lies in provide a kind of coating film production line multistage atmosphere isolation device, to mention
Rise gas isolating effect.
In order to solve the above technical problems, the invention provides the following technical scheme: a kind of coating film production line multistage gas isolating
Device, for being isolated the work atmosphere of adjacent two coating chamber in coating film production line, including at least two it is successively adjacent and with every
The isolation ward and at least two that plate is mutually separated correspond the vacuum pump for being connected to setting with the isolation ward, in the partition
Portion is additionally provided with the narrow-gap channel that both ends are respectively communicated with adjacent two isolation ward, the conduit wall of the two sides up and down of the narrow-gap channel
The both ends of plate are from the partition definite length extended into two isolation wards that the narrow-gap channel is connected to respectively.
Further, the isolation ward positioned at both ends at least two isolation ward is respectively equipped with plates with corresponding one
The slit through slot that film room connects, it is predetermined that the cell wall plate of the two sides up and down of the slit through slot is respectively facing isolation ward internal stretch
Length.
Further, the range of the length to height ratio of the narrow-gap channel is 54:500~58:500.
It further, is 70:600~80:600 positioned at the range of the length to height ratio of the slit through slot of entrance side；It is located at
The range of the length to height ratio of the slit through slot of outlet side is 54:600~58:600.
After adopting the above technical scheme, the present invention at least has the following beneficial effects: that the present invention passes through setting at least two
Adjacent isolation ward, and connect vacuum pump correspondingly for each isolation ward to carry out vacuumize process, realize multistage gas
Trap type isolation, twisted molecular layer atmosphere diffusion path reach gas isolating effect；Moreover, also passing through between adjacent isolation ward
Narrow-gap channel is connected, and slit isolation can more efficiently limit atmosphere diffusion.The present invention is in traditional air pocket isolation method base
On plinth, increase the series of air pocket isolation, while also cooperation connects adjacent isolation ward using narrow-gap channel and realizes isolation effect
The better slit isolation of fruit, to keep the gas isolating effect of entire isolating device good, can effectively meet the gas of high-precision requirement
Atmosphere isolation requirement is especially suitable for needing the coating process of the synchronous continuous work of kinds of processes atmosphere such as IMITO.
Detailed description of the invention
Fig. 1 is the principle schematic diagram of coating film production line atmosphere isolation device of the present invention.
Specific embodiment
The application is described in further detail in the following with reference to the drawings and specific embodiments.It should be appreciated that signal below
Property embodiment and explanation be only used to explain the present invention, it is not as a limitation of the invention, moreover, in the absence of conflict,
The features in the embodiments and the embodiments of the present application can be combined with each other.
The embodiment of the present invention provides a kind of coating film production line multistage atmosphere isolation device, for being isolated in coating film production line
The work atmosphere of adjacent two coating chamber, such as: it is set to SiO2Between coating chamber and ITO coating chamber, to avoid SiO2Coating chamber and
The work atmosphere of ITO coating chamber interpenetrates, to guarantee SiO2The plating film quality of plated film and ITO plated film.
As shown in Figure 1, the coating film production line multistage atmosphere isolation device successively abuts and including at least two with partition
The isolation ward 1 and at least two being mutually separated correspond the vacuum pump 2 for being connected to setting with the isolation ward 1.As shown in Figure 1
Embodiment in, the isolation ward 1 altogether be equipped with 4, it is to be understood that the quantity of isolation ward 1 can be according to actual needs
And it is increased and decreased, but usually less than 2.It is additionally provided with both ends in the middle part of the partition and is respectively communicated with the narrow of adjacent two isolation ward 1
Channel 12 is stitched, the both ends of the channel siding 14,16 of the two sides up and down of the narrow-gap channel 12 are from the partition respectively to described narrow
Definite length extended in adjacent two isolation ward 1 that seam channel 12 is connected to.Optionally, the model of the length to height ratio of the narrow-gap channel 12
It encloses for 54:500~58:500.Generally, the ratio that grows tall of narrow-gap channel 12 is bigger, and gas isolating effect is better.And in reality
When implementation, the height of the narrow-gap channel 12, which may be designed as meeting, to be installed corresponding conveyer belt and guarantees that workpiece can be with conveyer belt one
The minimum constructive height for passing unopposed through the narrow-gap channel 12 is acted, thus to promote gas isolating effect.
It can be to be moved inside isolation ward 1 in the also settable heating device array 15 in the top of each isolation ward 1
Glass substrate is heated, mainly as the hot heat output of glass substrate in the way of heat radiation and slight heat transfer, effectively to protect
The temperature of glass substrate is held in suitable range.
At least two isolation ward 1 is sequentially connected in series setting, wherein the isolation ward 1 positioned at both ends be respectively equipped with
The cell wall plate 18 of the slit through slot 17 that a corresponding coating chamber 3,4 connects, the two sides up and down of the slit through slot 17 is distinguished
Towards 1 internal stretch predetermined length of isolation ward.The slit through slot 18 is substantially identical with the principle of the narrow-gap channel 12,
Play the role of gas isolating between isolation ward and the coating chamber in the external world.Positioned at the length to height ratio of the slit through slot 18 of entrance side
Range be 70:600~80:600；Range positioned at the length to height ratio of the slit through slot 18 of outlet side is 54:600~58:
600。
The present invention connects very correspondingly by least two adjacent isolation wards 1 of setting, and for each isolation ward 1
Sky pumps 2 to carry out vacuumize process, realizes multistage air pocket formula isolation, and twisted molecular layer atmosphere diffusion path reaches gas isolating
Effect；Moreover, being also connected by narrow-gap channel 12 between adjacent isolation ward 1, slit isolation can more efficiently limit gas
Atmosphere diffusion.The present invention increases the series of air pocket isolation, while cooperating using slit on traditional air pocket isolation method basis
Channel 12 connects adjacent isolation ward 1 and realizes the better slit isolation of isolation effect, to make the atmosphere of entire isolating device
Isolation effect is more preferable, can effectively meet the gas isolating demand of high-precision requirement.It can also be further in isolation ward 1 and corresponding plating
Also slit through slot 18 is designed between film room, and can further promote gas isolating effect.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention are defined by the appended claims and their equivalents.
Claims (4)
1. a kind of coating film production line multistage atmosphere isolation device, for the work of adjacent two coating chamber to be isolated in coating film production line
Atmosphere, which is characterized in that the atmosphere isolation device include at least four it is successively adjacent and with isolation ward that partition is mutually separated with
And at least four correspond the vacuum pump for be connected to and being arranged with each isolation ward respectively, to be taken out to each isolation ward
It is vacuum-treated, the narrow-gap channel that both ends are respectively communicated with adjacent two isolation ward, the slit is additionally provided in the middle part of the partition
The both ends of the channel siding of the two sides up and down in channel are from the partition respectively into two isolation wards that the narrow-gap channel is connected to
Definite length extended.
2. coating film production line multistage atmosphere isolation device as described in claim 1, which is characterized in that at least four isolation
The isolation ward positioned at both ends in room is respectively equipped with the slit through slot to connect with a corresponding coating chamber, the slit through slot
The cell wall plates of two sides up and down be respectively facing isolation ward internal stretch predetermined length.
3. coating film production line multistage atmosphere isolation device as described in claim 1, which is characterized in that the length of the narrow-gap channel
The range of high ratio is 54:500~58:500.
4. coating film production line multistage atmosphere isolation device as claimed in claim 2, which is characterized in that described in entrance side
The range of the length to height ratio of slit through slot is 70:600~80:600；Positioned at the range of the length to height ratio of the slit through slot of outlet side
For 54:600~58:600.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610616844.8A CN106277816B (en) | 2016-07-29 | 2016-07-29 | Coating film production line multistage atmosphere isolation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610616844.8A CN106277816B (en) | 2016-07-29 | 2016-07-29 | Coating film production line multistage atmosphere isolation device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106277816A CN106277816A (en) | 2017-01-04 |
| CN106277816B true CN106277816B (en) | 2019-08-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610616844.8A Active CN106277816B (en) | 2016-07-29 | 2016-07-29 | Coating film production line multistage atmosphere isolation device |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113774354B (en) * | 2021-08-24 | 2024-04-26 | 中国建材国际工程集团有限公司 | Novel gas isolation device and magnetron sputtering continuous coating line and working method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4369730A (en) * | 1981-03-16 | 1983-01-25 | Energy Conversion Devices, Inc. | Cathode for generating a plasma |
| EP0076426A2 (en) * | 1981-09-28 | 1983-04-13 | Energy Conversion Devices, Inc. | Multiple chamber deposition and isolation system and method |
| CN2067711U (en) * | 1989-05-06 | 1990-12-19 | 中科院上海硅酸盐研究所 | Gas seperating device for continuous processing equipment with multi-chamber |
| US5946587A (en) * | 1992-08-06 | 1999-08-31 | Canon Kabushiki Kaisha | Continuous forming method for functional deposited films |
| CN101428973A (en) * | 2008-11-19 | 2009-05-13 | 苏州新爱可镀膜设备有限公司 | Magnetic controlled film coating chamber for film coating glass |
| CN101962755A (en) * | 2010-09-30 | 2011-02-02 | 深圳市金凯新瑞光电有限公司 | Continuous multiple sputter coating chamber atmosphere isolation system |
| CN102534538A (en) * | 2010-12-17 | 2012-07-04 | 上海空间电源研究所 | Atmosphere isolation device between vacuum chambers |
| TW201447008A (en) * | 2013-06-03 | 2014-12-16 | Adpv Technology Ltd | Gas reaction continuous chamber and gas reaction method |
-
2016
- 2016-07-29 CN CN201610616844.8A patent/CN106277816B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4369730A (en) * | 1981-03-16 | 1983-01-25 | Energy Conversion Devices, Inc. | Cathode for generating a plasma |
| EP0076426A2 (en) * | 1981-09-28 | 1983-04-13 | Energy Conversion Devices, Inc. | Multiple chamber deposition and isolation system and method |
| CN2067711U (en) * | 1989-05-06 | 1990-12-19 | 中科院上海硅酸盐研究所 | Gas seperating device for continuous processing equipment with multi-chamber |
| US5946587A (en) * | 1992-08-06 | 1999-08-31 | Canon Kabushiki Kaisha | Continuous forming method for functional deposited films |
| CN101428973A (en) * | 2008-11-19 | 2009-05-13 | 苏州新爱可镀膜设备有限公司 | Magnetic controlled film coating chamber for film coating glass |
| CN101962755A (en) * | 2010-09-30 | 2011-02-02 | 深圳市金凯新瑞光电有限公司 | Continuous multiple sputter coating chamber atmosphere isolation system |
| CN102534538A (en) * | 2010-12-17 | 2012-07-04 | 上海空间电源研究所 | Atmosphere isolation device between vacuum chambers |
| TW201447008A (en) * | 2013-06-03 | 2014-12-16 | Adpv Technology Ltd | Gas reaction continuous chamber and gas reaction method |
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| CN106277816A (en) | 2017-01-04 |
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Effective date of registration: 20201214 Address after: 201100 4a, building 1, No.1000 Qishen Road, Minhang District, Shanghai Patentee after: Aifake (China) Investment Co.,Ltd. Address before: 518000 2nd floor, Haowei building, Langshan No.2 Road, North District, Nanshan District, Shenzhen City, Guangdong Province Patentee before: ULVAC HIVAC OPTOELECTRONIC FILMS (SHENZHEN) Co.,Ltd. |
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