CN105441896B - A kind of fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity - Google Patents
A kind of fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity Download PDFInfo
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- CN105441896B CN105441896B CN201410474897.1A CN201410474897A CN105441896B CN 105441896 B CN105441896 B CN 105441896B CN 201410474897 A CN201410474897 A CN 201410474897A CN 105441896 B CN105441896 B CN 105441896B
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- deposit cavity
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Abstract
The invention provides a kind of fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity, including fixture ring body and shielding portion, the shielding portion is arranged in pairs the both ends of the circle diameter where the inward flange of the fixture ring body, the fixture ring internal diameter is 192.77mm 193.05mm, and two are 190.64mm 190.94mm with respect to the shelter internal diameter between shielding portions.The fixture ring of the present invention is configured in the deposit cavity of metal sputtering machine can produce 0.35 and H30 metal carbonyl conducting layers first layer without special management and control deposit cavity watt level and effectively prevent the titanium spallation problems of crystal edge.
Description
Technical field
The present invention relates to wafer manufacture field, more particularly to a kind of fixture for metal sputtering machine aluminum manufacturing procedure deposit cavity
Ring.
Background technology
In the process of sputter coating is carried out to wafer using metal sputtering machine, because 0.35, H30 products crystal edge holds
Easily cause product wafer defect because titanium spallation problems form particulate, such resultant metal conductor layer first layer need to be in metal sputtering
Board is produced using the deposit cavity for the fixture ring that internal diameter is 194mm, but must using the deposit cavity for the fixture ring that internal diameter is 194mm
It must can be produced when device power is more than 200kwh (the normal service cycle is 425kwh).This results in metal sputtering machine production capacity
Allotment is complicated, such as then can not produce metal carbonyl conducting layer first layer product, it is necessary to whole less than 200kwh in deposit cavity device power
Device power is gone to more than 200kwh by platform shutdown with control wafer can just continue to produce.Which results in board complex management.By
Fixed in board quantity, its used fixture ring is divided into two kinds of internal diameter 194mm and 197mm, to the number of 194mm fixture ring demands
Amount influences whether the quantity of 197mm fixture rings, so as to influence whole metal sputtering machine production capacity.Need to unite daily in process of production
Each deposit cavity device power size is counted, production metal carbonyl conducting layer first layer product machine limit can be just opened more than 200kwh, result in
Machine limits complex management.
All parts of inside cavity, which include fixture ring, in sputtering process can all be sputtered to some aluminium films, when deposit cavity portion
When part power becomes larger, internal diameter is that the aluminium film that 194mm fixture ring edge is sputtered to is more and more thicker, fixture ring actual inner diameter
Then diminish, the diameter that wafer can be sputtered to also diminishes.Due to new its internal diameter of fixture ring is changed after maintenance also larger, such fixture
The wafer that ring is pushed down can sputter be relatively large in diameter, crystal edge is easier to be sputtered to aluminium film, plain conductor first layer produces at this moment
When can cause to produce titanium in follow-up process and peel off to form particle and produce product defects.
The content of the invention
For above-mentioned problems of the prior art, new it is used for metal sputtering machine aluminum the invention provides a kind of
The fixture ring of journey deposit cavity, it can produce 0.35 and H30 plain conductors without special management and control deposit cavity watt level
Layer first layer simultaneously effectively prevent the titanium spallation problems of crystal edge.To achieve these goals, the technical solution adopted in the present invention
It is as follows：
A kind of fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity, including fixture ring body and shielding portion, the screening
The portion of covering is arranged in pairs the both ends of the circle diameter where the inward flange of the fixture ring body, and the fixture ring internal diameter is
192.77mm-193.05mm, two are 190.64mm-190.94mm with respect to the shelter internal diameter between shielding portions；
Further, the fixture ring internal diameter is 192.77mm, and the shelter internal diameter is 190.64mm；
Further, the fixture ring internal diameter is 192.77mm, and the shelter internal diameter is 190.94mm；
Further, the fixture ring internal diameter is 193.05mm, and the shelter internal diameter is 190.64mm；
Further, the fixture ring internal diameter is 193.05mm, and the shelter internal diameter is 190.94mm；
Further, the fixture ring internal diameter is 192.80mm, and the shelter internal diameter is 190.80mm.
Having the beneficial effect that acquired by the present invention：
1. the internal diameter required for before effectively reducing is the configuration quantity of 194mm fixture rings, need to configure 7-8 before
The deposit cavity of internal diameter 194mm fixture rings only needs to configure 3-4 after employing the fixture ring that new internal diameter is 192.8mm,
Which adds the configuration quantity for the fixture ring that internal diameter is 197mm, facilitate production capacity to allocate and maximize production capacity, facilitate machine
Platform management and machine limit management.
2. using after new fixture ring, 0.35 can directly produce with H30 plain conductors first layer, and other layers are all in 197mm
Produced on fixture ring, greatly facilitate production capacity allotment, the management of machine limit and maintenance care.
3. needing deposit cavity power going to 200kwh with control wafer using existing fixture ring, there is aluminium target compared with billow
Take, use the expense that aluminium target can be greatly reduced after new fixture ring.
Brief description of the drawings
Fig. 1 is the structure chart of the fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity of the present invention.
Reference：1. fixture ring body；2. shielding portion
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, below in conjunction with the accompanying drawings, the present invention is entered
Row is further described.It should be appreciated that specific embodiment described herein is not used to limit only to explain the present invention
The present invention.
As shown in figure 1, the fixture ring of used deposit cavity is made up of fixture ring body 1 and shielding portion 2 in the prior art,
The shielding portion is arranged in pairs the both ends of the circle diameter where the inward flange of the fixture ring body, and the internal diameter of fixture ring is
194mm, the shelter internal diameter between relative two shielding portions is 192mm.Row metal is being entered to wafer using metal sputtering machine
It is 194mm by internal diameter during plated film, shelter internal diameter is that the high temperature that 192mm multiple fixture rings are arranged in deposit cavity is high uniformly
On the heater of degree, fixture ring pushes down wafer, avoids it from being blown afloat by back pressure, and its shelter can cover in wafer and add
The edge of hot device, makes crystal edge not be sputtered to aluminium film.In order to overcome the fixture ring using existing 194mm internal diameters in operation power
The defects of plain conductor first layer can not be produced during less than 200kwh, start run and go to the power in deposit cavity
200kwh, remove fixture ring and measure size, count the internal diameter of each fixture ring and the internal diameter of shielding portion to determine fixture ring
By the situation of sputter, as shown in table 1：
| Fixture ring (mm) | Completely newly | Fixture ring A | Fixture ring B | Fixture ring C |
| Power (kwh) | 0 | 200 | 200 | 207 |
| Shelter 1 | 192.20 | 190.66 | 190.90 | 190.65 |
| Shelter 2 | 192.28 | 190.68 | 190.91 | 190.70 |
| Shelter 3 | 192.24 | 190.76 | 190.94 | 190.64 |
| Internal diameter 1 | 194.20 | 192.80 | 193.05 | 192.77 |
| Internal diameter 2 | 194.22 | 192.80 | 193.04 | 192.79 |
| Internal diameter 3 | 194.28 | 192.84 | 193.04 | 192.80 |
Table 1
It can thus be seen that when being about 200kwh operations with power, by the fixture ring of 194mm internal diameters in sputtering process
Edge sputter has arrived aluminium film, and the internal diameter of fixture ring and the internal diameter of shelter for causing 194mm internal diameters all diminish, wherein fixture
Between ring internal diameter narrows down to 192.77mm-193.05mm, shelter internal diameter is narrowed down between 190.64-190.94.
According to this data, between the internal diameter of new fixture ring is arranged on into 192.77mm-193.05mm in the present invention, and
Between the internal diameter of shelter is arranged on into 190.64-190.94, then can avoid can not when power is below 200kwh operations
The problem of producing plain conductor first layer.It is preferably internal diameter to be run by upper machine by the diameter of the fixture ring of the present invention
192.77mm, shelter internal diameter 190.64mm, internal diameter 192.77mm, shelter internal diameter 190.94mm, internal diameter 193.05mm, masking
Locate internal diameter 190.64mm, internal diameter 193.05mm, shelter internal diameter 190.94mm and internal diameter 192.80mm, shelter internal diameter
Five kinds of 190.80mm.
The novel clamp ring of the present invention was tested on board in 2010 and completed, and it can be when power be below 200kwh
The sputter production of plain conductor first layer is carried out, is used comprehensively at present, and substitutes 194mm fixture rings, at present aluminum manufacturing procedure gold
Category sputtering machine table has all been allocated as the novel clamp ring of the present invention, and 0.35 can be direct with H30 resultant metal wire first layers
Produced in the deposit cavity of the novel clamp ring using the present invention, other metal carbonyl conducting layers are all using 197mm fixture rings
Produced in deposit cavity.
Embodiment described above only expresses embodiments of the present invention, and its description is more specific and detailed, but can not
Therefore it is interpreted as the limitation to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art,
Without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection model of the present invention
Enclose.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (6)
1. a kind of fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity, including fixture ring body and shielding portion, the masking
Portion is arranged in pairs the both ends of the circle diameter where the inward flange of the fixture ring body, it is characterised in that the fixture ring
Internal diameter is 192.77mm-193.05mm, and two are 190.64mm-190.94mm with respect to the shelter internal diameter between shielding portions.
2. it is used for the fixture ring of metal sputtering machine aluminum manufacturing procedure deposit cavity as claimed in claim 1, it is characterised in that the fixture
Ring internal diameter is 192.77mm, and the shelter internal diameter is 190.64mm.
3. it is used for the fixture ring of metal sputtering machine aluminum manufacturing procedure deposit cavity as claimed in claim 1, it is characterised in that the fixture
Ring internal diameter is 192.77mm, and the shelter internal diameter is 190.94mm.
4. it is used for the fixture ring of metal sputtering machine aluminum manufacturing procedure deposit cavity as claimed in claim 1, it is characterised in that the fixture
Ring internal diameter is 193.05mm, and the shelter internal diameter is 190.64mm.
5. it is used for the fixture ring of metal sputtering machine aluminum manufacturing procedure deposit cavity as claimed in claim 1, it is characterised in that the fixture
Ring internal diameter is 193.05mm, and the shelter internal diameter is 190.94mm.
6. it is used for the fixture ring of metal sputtering machine aluminum manufacturing procedure deposit cavity as claimed in claim 1, it is characterised in that the fixture
Ring internal diameter is 192.80mm, and the shelter internal diameter is 190.80mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410474897.1A CN105441896B (en) | 2014-09-17 | 2014-09-17 | A kind of fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410474897.1A CN105441896B (en) | 2014-09-17 | 2014-09-17 | A kind of fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105441896A CN105441896A (en) | 2016-03-30 |
| CN105441896B true CN105441896B (en) | 2018-04-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410474897.1A Active CN105441896B (en) | 2014-09-17 | 2014-09-17 | A kind of fixture ring for metal sputtering machine aluminum manufacturing procedure deposit cavity |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6171453B1 (en) * | 1998-12-02 | 2001-01-09 | Taiwan Semiconductor Manufacturing Co., Ltd | Alignment mark shielding ring and method of using |
| CN101736290A (en) * | 2008-11-19 | 2010-06-16 | 和舰科技(苏州)有限公司 | Method for improving die bonding in process of deposition of aluminum metallic film |
| CN201708142U (en) * | 2010-03-15 | 2011-01-12 | 中芯国际集成电路制造(上海)有限公司 | Wafer placing tray in aluminum metal deposition process |
| CN202359191U (en) * | 2011-08-12 | 2012-08-01 | 上海集成电路研发中心有限公司 | Clamp ring device of physical vapor deposition equipment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7927424B2 (en) * | 2002-04-22 | 2011-04-19 | Stmicroelectronics, Inc. | Padded clamp ring with edge exclusion for deposition of thick AlCu/AlSiCu/Cu metal alloy layers |
-
2014
- 2014-09-17 CN CN201410474897.1A patent/CN105441896B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6171453B1 (en) * | 1998-12-02 | 2001-01-09 | Taiwan Semiconductor Manufacturing Co., Ltd | Alignment mark shielding ring and method of using |
| CN101736290A (en) * | 2008-11-19 | 2010-06-16 | 和舰科技(苏州)有限公司 | Method for improving die bonding in process of deposition of aluminum metallic film |
| CN201708142U (en) * | 2010-03-15 | 2011-01-12 | 中芯国际集成电路制造(上海)有限公司 | Wafer placing tray in aluminum metal deposition process |
| CN202359191U (en) * | 2011-08-12 | 2012-08-01 | 上海集成电路研发中心有限公司 | Clamp ring device of physical vapor deposition equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105441896A (en) | 2016-03-30 |
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Address after: 215123 333 Xinghua street, Suzhou Industrial Park, Jiangsu Patentee after: Warship chip manufacturing (Suzhou) Limited by Share Ltd Address before: 215025 Xinghua street, Suzhou Industrial Park, Suzhou, Jiangsu 333 Patentee before: Hejian Technology (Suzhou) Co., Ltd. |