CN112601368A - Film sensor insulating layer composite structure based on metal substrate - Google Patents

Film sensor insulating layer composite structure based on metal substrate Download PDF

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Publication number
CN112601368A
CN112601368A CN202110152953.XA CN202110152953A CN112601368A CN 112601368 A CN112601368 A CN 112601368A CN 202110152953 A CN202110152953 A CN 202110152953A CN 112601368 A CN112601368 A CN 112601368A
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layer
insulating layer
metal substrate
protective layer
sensor circuit
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CN202110152953.XA
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Chinese (zh)
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曹建峰
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • H05K1/186—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or connecting to patterned circuits before or during embedding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/26—Cleaning or polishing of the conductive pattern

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Sensors (AREA)

Abstract

The invention discloses a thin film sensor insulating layer composite structure based on a metal substrate, which comprises a metal substrate layer, an adhesive layer arranged on the metal substrate layer, a first insulating layer arranged on the adhesive layer, a second insulating layer arranged on the first insulating layer, a third insulating layer arranged on the second insulating layer, a sensor circuit layer arranged on the third insulating layer, and a protective layer arranged or not arranged on the third insulating layer and covering the third insulating layer and the sensor circuit layer. The silicon nitride insulating layer is not contacted with the metal substrate, so that the possibility of reaction between the silicon nitride insulating layer and the metal substrate in a high-temperature environment is avoided; meanwhile, due to the isolation of the silicon nitride insulating layer, a pinhole in the aluminum oxide insulating layer is blocked, so that short circuit between the sensor circuit layer and the metal substrate is avoided, and the insulating capability of the thin film sensor based on the metal substrate in the use process in a high-temperature environment is ensured.

Description

Film sensor insulating layer composite structure based on metal substrate
Technical Field
The invention relates to a metal substrate-based thin film sensor insulating layer composite structure applied to a high-temperature environment, and belongs to the technical field of thin film sensors.
Background
With the upgrading of industrial internet and intelligent manufacturing industry, the real-time monitoring of the manufacturing process becomes more and more important, the product quality can be improved and the production efficiency can be improved by acquiring key process parameters in the manufacturing process, problems can be found in advance and timely intervention can be performed, and therefore the occurrence of serious accidents is avoided. The sensor plays an important role in acquiring data such as key process parameters, but the traditional sensor is difficult to approach a point to be measured due to large size, and even if the traditional sensor contacts the point to be measured in different installation modes, the traditional sensor has great damage to the original physical field, so that the detection authenticity is damaged; meanwhile, the traditional sensor has slow response and great hysteresis, so that the requirement of on-site real-time monitoring is difficult to meet. The thin film sensor can provide higher spatial resolution and time resolution by virtue of the characteristics of small size and quick response, so that the field monitoring is more real and timely. However, the conventional thin film sensor based on the silicon substrate is difficult to be applied to the occasions of high temperature, high pressure, large strain and corrosivity due to the defects of brittleness, non-high temperature resistance and the like of the substrate material.
In order to solve the above problems, a thin film sensor based on a metal substrate has been developed, but due to the particularity of the metal substrate, the substrate needs to be polished in a conventional processing environment where cleanliness is not high, and then transferred to an ultra clean room for manufacturing the sensor. In the subsequent process of manufacturing the sensor in an ultraclean room, the phenomenon of pinholes (pin holes) exists in the insulating layer manufactured by adopting an electron beam evaporation (E-beam evaporation) process, while the insulating layer manufactured by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) process does not have pinholes (pin holes), but the insulating layer can react with the metal substrate at high temperature, and the two phenomena can bring short circuit between a sensor circuit and the metal substrate and finally cause the failure of sensor manufacturing.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a thin film sensor insulating layer composite structure based on a metal substrate, which ensures the reliability of the insulating layer, thereby realizing the successful use of the thin film sensor based on the metal substrate in a high-temperature environment.
In order to achieve the technical purpose, the invention adopts the technical scheme that: the utility model provides a film sensor insulating layer composite construction based on metal substrate, includes the metal substrate layer, sets up the adhesive linkage on the metal substrate layer, sets up the first insulating layer on the adhesive linkage, sets up the second insulating layer on the first insulating layer, sets up the third insulating layer on the second insulating layer, the sensor circuit layer that sets up on the third insulating layer, sets up or not sets up the protective layer that covers third insulating layer and sensor circuit layer on the third insulating layer.
Furthermore, the bonding layer is a metal titanium layer or a metal chromium layer with the thickness of 5-50 nm deposited on the metal substrate through a sputtering process, and is used for improving the bonding property between the subsequent insulating layer and the metal substrate.
Furthermore, the first insulating layer is an alumina insulating layer with the thickness of 0.2-5 um deposited on the bonding layer through an electron beam evaporation process.
Furthermore, the second insulating layer is a silicon nitride insulating layer with the thickness of 0.5-5 um deposited on the first insulating layer through a plasma enhanced chemical vapor deposition process.
Furthermore, the third insulating layer is an alumina insulating layer with the thickness of 0.2-5 um deposited on the second insulating layer through an electron beam evaporation process.
Furthermore, the protective layer is an alumina layer with the thickness of 0.2-5 um deposited on the region except the bonding pad of the sensor circuit layer through an electron beam evaporation process by means of a metal mask, and the alumina layer does not cover the bonding pad of the sensor circuit layer.
Furthermore, a second protective layer is further arranged on the protective layer, the second protective layer is a silicon nitride layer which is deposited on the protective layer through a plasma enhanced chemical vapor deposition process and is 0.5-5 um thick by means of a metal mask, and the silicon nitride layer does not cover a bonding pad of the sensor circuit layer.
Furthermore, a third protective layer is further arranged on the second protective layer, the third protective layer is an alumina layer which is deposited on the second protective layer through an electron beam evaporation process and is 0.2-5 um thick by means of a metal mask, and the alumina layer does not cover a bonding pad of the sensor circuit layer.
The preparation process of the thin film sensor insulating layer composite structure based on the metal substrate comprises the following steps:
cleaning a metal substrate by acetone, isopropanol and deionized water, and drying by nitrogen to finish substrate preparation;
depositing a 5-50 nm metal titanium layer on the metal substrate by a sputtering process;
depositing an alumina insulating layer of 0.2-5 um on the metal titanium layer by an electron beam evaporation process;
depositing a silicon nitride insulating layer of 0.5-5 um on the aluminum oxide insulating layer by a plasma enhanced chemical vapor deposition process;
depositing an aluminum oxide insulating layer of 0.2-5 um on the silicon nitride insulating layer by an electron beam evaporation process;
sixthly, depositing a sensor circuit layer on the alumina insulating layer through photoetching, sputtering and stripping;
depositing a 0.2-5 um aluminum oxide protective layer on the region except the bonding pad of the sensor circuit layer by an electron beam evaporation process by means of a metal mask, wherein the aluminum oxide protective layer does not cover the bonding pad of the sensor circuit;
depositing a silicon nitride protective layer of 0.5-5 um on the aluminum oxide protective layer by a plasma enhanced chemical vapor deposition process with the help of a metal mask, wherein the silicon nitride protective layer does not cover the bonding pad of the sensor circuit;
and step nine, depositing a 0.2-5 um aluminum oxide protective layer on the silicon nitride protective layer by an electron beam evaporation process by means of a metal mask, wherein the aluminum oxide protective layer does not cover the bonding pad of the sensor circuit.
The beneficial technical effects of the invention are as follows: the silicon nitride insulating layer is not contacted with the metal substrate, so that the possibility of reaction between the silicon nitride insulating layer and the metal substrate in a high-temperature environment is avoided; meanwhile, although a pin hole (pin hole) exists in the aluminum oxide insulating layer, the pin hole is blocked due to the isolation of the middle silicon nitride insulating layer, so that short circuit between the sensor circuit layer and the metal substrate is avoided, and the insulating capability of the thin film sensor based on the metal substrate in the use process in a high-temperature environment is ensured.
Drawings
The invention is further described below with reference to the accompanying drawings.
FIG. 1 is a schematic structural diagram of example 5 of the present invention;
fig. 2 is a schematic top view of embodiment 5 of the present invention.
In the figure: 1. metal substrate layer, 2, adhesive layer, 3, first insulating layer, 4, second insulating layer, 5, third insulating layer, 6, protective layer, 7, sensor circuit layer, 8, second protective layer, 9, third protective layer, 10, pad.
Detailed Description
Example 1
A composite structure of a metal substrate-based thin film sensor insulating layer comprises a metal substrate layer 1, an adhesive layer 2 arranged on the metal substrate layer 1, a first insulating layer 3 arranged on the adhesive layer 2, a second insulating layer 4 arranged on the first insulating layer 3, a third insulating layer 5 arranged on the second insulating layer 4, and a sensor circuit layer 7 arranged on the third insulating layer 5.
Example 2
Preferably, the bonding layer 2 is a metal titanium layer or a metal chromium layer deposited on the metal substrate by a sputtering process and having a thickness of 5-50 nm, and is used for improving the bonding property between the subsequent insulating layer and the metal substrate.
The first insulating layer 3 is an alumina insulating layer with the thickness of 0.2-5 um deposited on the bonding layer through an electron beam evaporation process.
The second insulating layer 4 is a silicon nitride insulating layer with the thickness of 0.5-5 um deposited on the first insulating layer through a plasma enhanced chemical vapor deposition process.
The third insulating layer 5 is an alumina insulating layer with the thickness of 0.2-5 um deposited on the second insulating layer through an electron beam evaporation process.
Example 3
Preferably, a protective layer 6 covering the third insulating layer 5 and the sensor circuit layer 7 is provided on the third insulating layer 5.
The protective layer 6 is an alumina layer with the thickness of 0.2-5 um deposited on the region except the bonding pad of the sensor circuit layer by means of a metal mask plate through an electron beam evaporation process, and the alumina layer does not cover the bonding pad of the sensor circuit layer.
The protective layer 6 serves to protect the sensor circuit layer from external scratches, abrasion, and other damages, and also has a certain insulating ability.
Example 4
As a preference for embodiment 3, the protective layer 6 is further provided with a second protective layer 8, the second protective layer 8 is a silicon nitride layer deposited on the protective layer 6 by a plasma enhanced chemical vapor deposition process with the help of a metal mask, and the silicon nitride layer has a thickness of 0.5-5 um and does not cover the bonding pad of the sensor circuit layer.
The second protective layer 8 serves to cover the pinholes in the protective layer 6, so that when the sensor protective layer contacts the metal, short circuit between the sensor circuit and the metal still does not occur, and the mechanical strength of the whole protective layer is also increased.
Example 5
As shown in fig. 1 and 2, the second protective layer 8 is further provided with a third protective layer 9, the third protective layer 9 is an alumina layer deposited on the second protective layer 8 by an electron beam evaporation process with a thickness of 0.2 to 5 um by means of a metal mask, and the alumina layer does not cover the pad of the sensor circuit layer.
The third protective layer 9 serves to further increase the insulating ability and mechanical strength of the protective layer against the external severe conditions.
Example 6
The preparation process of the thin film sensor insulating layer composite structure based on the metal substrate comprises the following steps:
cleaning a metal substrate by acetone, isopropanol and deionized water, and drying by nitrogen to finish substrate preparation;
depositing a 5-50 nm metal titanium (Ti) layer on the metal substrate through a sputtering process (sputtering) for improving the adhesion between a subsequent insulating layer and the metal substrate;
step three, coating a metal titanium (Ti) layer by an electron beam evaporation process (E-beam evaporation)A layer of 0.2-5 um aluminum oxide (Al) is deposited on the surface2O3) An insulating layer;
step four, performing Plasma Enhanced Chemical Vapor Deposition (PECVD) on aluminum oxide (Al)2O3) Depositing a layer of 0.5-5 um silicon nitride (Si) on the insulating layer3N4) An insulating layer;
fifthly, silicon nitride (Si) is subjected to electron beam evaporation (E-beam evaporation)3N4) A layer of 0.2-5 um aluminum oxide (Al) is deposited on the insulating layer2O3) An insulating layer;
step six, carrying out photoetching, sputtering, stripping and other processes on aluminum oxide (Al)2O3) Depositing a sensor circuit layer on the insulating layer;
step seven, depositing a layer of 0.2-5 um aluminum oxide (Al) on the area except the bonding pad of the sensor circuit layer by an electron beam evaporation process (E-beam evaporation) by means of a metal mask2O3) A protective layer;
eighthly, depositing a layer of 0.5-5 um silicon nitride (Si) on the aluminum oxide protective layer by means of a metal mask through a Plasma Enhanced Chemical Vapor Deposition (PECVD) process3N4) A protective layer (the pads of the sensor circuit should be exposed and not covered by the silicon nitride protective layer);
and step nine, depositing a 0.2-5 um aluminum oxide protective layer (the bonding pad of the sensor circuit should be exposed and not covered by the aluminum oxide protective layer) on the silicon nitride protective layer by an electron beam evaporation process (E-beam evaporation) by means of a metal mask.
The structure not only solves the problem of aluminum oxide (Al) which is deposited by adopting electron beam evaporation (E-beam evaporation) only2O3) The silicon nitride (Si) serving as an insulating layer is easy to generate pinholes (pin holes) and cannot realize the insulating function, and simultaneously, the silicon nitride (Si) deposited by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) process is solved3N4) The insulating material is easy to react with a metal substrate under high-temperature use conditions to cause the problem of insulation failure.
CompoundingSelection of materials for the insulating layers in the structure, e.g. aluminium oxide (Al)2O3) And silicon nitride (Si)3N4). The material chosen for such composite structures must satisfy two points: (1) the insulating property is strong, namely the breakdown field strength is high, otherwise, the insulating property is easily reduced or even lost under the high-temperature condition; (2) the thermal expansion coefficients of the insulating layers are close to those of the metal substrate, and cannot be different too much, and the thermal expansion coefficients are close to each other, which may cause the insulating layers to crack under high temperature conditions to reduce the insulating performance.
The silicon nitride insulating layer is not contacted with the metal substrate, so that the possibility of reaction between the silicon nitride insulating layer and the metal substrate in a high-temperature environment is avoided; meanwhile, although a pin hole (pin hole) exists in the aluminum oxide insulating layer, the pin hole is blocked due to the isolation of the middle silicon nitride insulating layer, so that short circuit between the sensor circuit layer and the metal substrate is avoided, and the insulating capability of the thin film sensor based on the metal substrate in the use process in a high-temperature environment is ensured.
Can realize silicon nitride (Si) under high temperature condition3N4) The insulating layer is made of silicon nitride (Si) at high temperature3N4) The insulating layer reacts with the metal substrate to cause insulation failure; can realize alumina (Al)2O3) Used as an insulating layer in a high-temperature environment, even alumina (Al)2O3) Pinholes (pin holes) exist in the insulating layer, and the insulating function can not fail by adopting the structure of the invention.
The above embodiments are only used for explaining the technical solution of the present invention, and are not used for limiting the technical solution of the present invention, and all the simple modifications based on the present invention belong to the protection scope of the present invention.

Claims (9)

1. The utility model provides a film sensor insulating layer composite construction based on metal substrate which characterized in that: the sensor circuit layer comprises a metal basal layer, an adhesive layer arranged on the metal basal layer, a first insulating layer arranged on the adhesive layer, a second insulating layer arranged on the first insulating layer, a third insulating layer arranged on the second insulating layer, a sensor circuit layer arranged on the third insulating layer, and a protective layer arranged on or not arranged on the third insulating layer and covering the third insulating layer and the sensor circuit layer.
2. The metal substrate-based thin film sensor insulator layer composite structure of claim 1, wherein: the bonding layer is a metal titanium layer or a metal chromium layer with the thickness of 5-50 nm deposited on the metal substrate.
3. The metal substrate-based thin film sensor insulator layer composite structure of claim 1, wherein: the first insulating layer is an alumina insulating layer with the thickness of 0.2-5 um deposited on the bonding layer through an electron beam evaporation process.
4. The metal substrate-based thin film sensor insulator layer composite structure of claim 1, wherein: the second insulating layer is a silicon nitride insulating layer with the thickness of 0.5-5 um deposited on the first insulating layer through a plasma enhanced chemical vapor deposition process.
5. The metal substrate-based thin film sensor insulator layer composite structure of claim 1, wherein: the third insulating layer is an alumina insulating layer with the thickness of 0.2-5 um deposited on the second insulating layer through an electron beam evaporation process.
6. The metal substrate-based thin film sensor insulator layer composite structure of claim 1, wherein: the protective layer is an alumina layer with the thickness of 0.2-5 um deposited on the region except the bonding pad of the sensor circuit layer by means of a metal mask plate through an electron beam evaporation process, and the alumina layer does not cover the bonding pad of the sensor circuit layer.
7. The metal substrate-based thin film sensor insulator layer composite structure of claim 6, wherein: still be provided with the second protective layer on the protective layer, the second protective layer is through the deposited silicon nitride layer of thickness 0.5 ~ 5 um of plasma enhanced chemical vapor deposition technology on the protective layer with the help of metal mask version, and the silicon nitride layer does not cover the pad of sensor circuit layer.
8. The metal substrate-based thin film sensor insulator layer composite structure of claim 7, wherein: still be provided with the third protective layer on the second protective layer, the third protective layer is through the deposited 0.2 ~ 5 um thick aluminium oxide layer of electron beam evaporation process on the second protective layer with the help of metal mask version, and the pad on sensor circuit layer is not covered to the aluminium oxide layer.
9. The metal substrate-based thin film sensor insulating layer composite structure according to claim 1, wherein the preparation process comprises the following steps:
cleaning a metal substrate by acetone, isopropanol and deionized water, and drying by nitrogen to finish substrate preparation;
depositing a 5-50 nm metal titanium layer on the metal substrate by a sputtering process;
depositing an alumina insulating layer of 0.2-5 um on the metal titanium layer by an electron beam evaporation process;
depositing a silicon nitride insulating layer of 0.5-5 um on the aluminum oxide insulating layer by a plasma enhanced chemical vapor deposition process;
depositing an aluminum oxide insulating layer of 0.2-5 um on the silicon nitride insulating layer by an electron beam evaporation process;
sixthly, depositing a sensor circuit layer on the alumina insulating layer through photoetching, sputtering and stripping;
depositing a 0.2-5 um aluminum oxide protective layer on the region except the bonding pad of the sensor circuit layer by an electron beam evaporation process by means of a metal mask, wherein the aluminum oxide protective layer does not cover the bonding pad of the sensor circuit;
depositing a silicon nitride protective layer of 0.5-5 um on the aluminum oxide protective layer by a plasma enhanced chemical vapor deposition process with the help of a metal mask, wherein the silicon nitride protective layer does not cover the bonding pad of the sensor circuit;
and step nine, depositing a 0.2-5 um aluminum oxide protective layer on the silicon nitride protective layer by an electron beam evaporation process by means of a metal mask, wherein the aluminum oxide protective layer does not cover the bonding pad of the sensor circuit.
CN202110152953.XA 2021-02-04 2021-02-04 Film sensor insulating layer composite structure based on metal substrate Pending CN112601368A (en)

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Application Number Priority Date Filing Date Title
CN202110152953.XA CN112601368A (en) 2021-02-04 2021-02-04 Film sensor insulating layer composite structure based on metal substrate

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113755793A (en) * 2021-08-27 2021-12-07 电子科技大学 Anti-oxidation self-repairing protective layer for thin film sensor and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113755793A (en) * 2021-08-27 2021-12-07 电子科技大学 Anti-oxidation self-repairing protective layer for thin film sensor and preparation method thereof

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