CN213570822U - Vapor deposition platform - Google Patents
Vapor deposition platform Download PDFInfo
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- CN213570822U CN213570822U CN202022455240.4U CN202022455240U CN213570822U CN 213570822 U CN213570822 U CN 213570822U CN 202022455240 U CN202022455240 U CN 202022455240U CN 213570822 U CN213570822 U CN 213570822U
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- quartz ceiling
- vapor deposition
- roughness
- quartz
- ceiling
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Abstract
The utility model discloses a vapor deposition platform, which comprises a stainless steel platform, wherein the stainless steel platform is provided with an installation column, a quartz ceiling is arranged on the installation column, and the end part of the installation column is provided with a snap ring for clamping the quartz ceiling; and a sand blasting layer which is deposited in a crystalline phase and is used for increasing the surface roughness is arranged on the quartz ceiling. The roughness when the crystalline phase deposits is strengthened through the design of sandblast layer, prolongs the replacement cycle time of quartz ceiling, and the compound of deposit is more firm on the sandblast layer, reduce cost.
Description
Technical Field
The utility model relates to a MOCVD equipment technical field especially relates to a vapor deposition platform to on horizontal MOCVD equipment.
Background
MOCVD (metal organic source chemical vapor deposition equipment) is equipment for performing compound deposition by using a vapor phase source in a high-temperature chamber. The method is characterized in that a substrate (such as sapphire, silicon wafers and the like) is placed on a graphite plate, and III/V group gas of a periodic table of chemical elements is introduced at a certain temperature and under a certain pressure, so that the III/V group gas can synthesize a compound on the surface of the substrate, and the compound can deposit along a substrate crystalline phase (commonly called epitaxial growth).
The quartz ceiling used by a vapor deposition platform on the existing horizontal MOCVD equipment has a smooth surface, a compound is not easy to deposit in the epitaxial growth process, even if the compound is deposited, the formed deposit is not firm, and in the subsequent growth process, some particles can fall on the surface of the substrate (the particles can influence the photoelectric property of a product), so that generally, the quartz ceiling needs to be detached for cleaning every 5 furnaces. However, such frequent replacement of the quartz ceiling is required to prolong the life of the quartz ceiling, because the quartz ceiling is easily damaged, and the growth process parameters are difficult to maintain stably.
SUMMERY OF THE UTILITY MODEL
In order to overcome the defects, the utility model aims to provide a vapor deposition platform, which makes the surface of a quartz ceiling board to be roughened, increases the roughness of the quartz surface, is favorable for compound deposition and ensures that the deposited compound is firmer.
In order to achieve the above purpose, the utility model discloses a technical scheme is: a vapor deposition platform comprises a stainless steel platform, wherein an installation column is arranged on the stainless steel platform, a quartz ceiling is arranged on the installation column, and a clamping ring for clamping the quartz ceiling is arranged at the end part of the installation column; and a sand blasting layer which is deposited in a crystalline phase and is used for increasing the surface roughness is arranged on the quartz ceiling.
Further, the roughness of sandblast layer is 2.5 ~ 4um, and the change cycle of quartz ceiling is 12 stoves this moment.
Further, the roughness of sandblast layer is 4 ~ 6um, and the change cycle of quartz ceiling is 18 stoves this moment.
Further, the roughness of sandblast layer is 6 ~ 8um, and the change cycle of quartz ceiling is 35 stoves this moment.
It follows that the roughness goes from small to large, and the replacement cycle becomes longer as the roughness becomes larger. The replacement period is effectively and greatly improved, the method is more economical, and the most important is stable process conditions. The quartz ceiling above 8um was not tested because the breakage rate of the quartz ceiling after sandblasting was too high.
Compared with the prior art, the utility model discloses a roughness when the design of sandblast comes the reinforcing crystalline phase deposit prolongs quartz ceiling's change cycle time, and the sedimentary compound is more firm on the sandblast layer, reduce cost.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention.
In the figure:
1-a stainless steel platform; 11-mounting posts; 2-quartz ceiling panels; 3-a snap ring; and 4, blasting a sand layer.
Detailed Description
The following detailed description of the preferred embodiments of the present invention will be provided in conjunction with the accompanying drawings, so as to enable those skilled in the art to more easily understand the advantages and features of the present invention, and thereby define the scope of the invention more clearly and clearly.
Examples
Referring to fig. 1, the vapor deposition platform in the embodiment includes a stainless steel platform 1, a mounting column 11 is disposed on the stainless steel platform 1, a quartz ceiling 2 is disposed on the mounting column 11, and a clamping ring 3 for clamping the quartz ceiling 2 is disposed at an end of the mounting column 11. The above structure is identical to the existing vapor deposition platform, except that in this document a crystalline phase deposited sandblasted layer 4 increasing the surface roughness is provided on the quartz ceiling 2.
Test 1
When the surface roughness of the sand blasting layer is 2.5-4 um, the quartz ceiling can be continuously used for 12 furnaces in the actual use process, namely the replacement period of the quartz ceiling is 12 furnaces.
Test 2
When the surface roughness of the sand blasting layer is 4-6 um, the quartz ceiling can be continuously used for 12 furnaces in the actual use process, namely the replacement period of the quartz ceiling is 18 furnaces.
Test 3
When the surface roughness of the sand blasting layer is 6-8 um, the quartz ceiling can be continuously used for 12 furnaces in the actual use process, namely the replacement period of the quartz ceiling is 35 furnaces.
It follows that the roughness goes from small to large, and the replacement cycle becomes longer as the roughness becomes larger. The replacement period is effectively and greatly improved, the method is more economical, and the most important is stable process conditions. The quartz ceiling above 8um was not tested because the breakage rate of the quartz ceiling after sandblasting was too high.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, so as not to limit the protection scope of the present invention, and all equivalent changes or modifications made according to the spirit of the present invention should be covered in the protection scope of the present invention.
Claims (4)
1. A vapor deposition platform comprises a stainless steel platform, wherein an installation column is arranged on the stainless steel platform, a quartz ceiling is arranged on the installation column, and a clamping ring for clamping the quartz ceiling is arranged at the end part of the installation column; the method is characterized in that: and a sand blasting layer which is deposited in a crystalline phase and is used for increasing the surface roughness is arranged on the quartz ceiling.
2. A vapor deposition platform according to claim 1, wherein: the roughness of sandblast layer is 2.5 ~ 4 um.
3. A vapor deposition platform according to claim 1, wherein: the roughness of sandblast layer is 4 ~ 6 um.
4. A vapor deposition platform according to claim 1, wherein: the roughness of sandblast layer is 6 ~ 8 um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022455240.4U CN213570822U (en) | 2020-10-29 | 2020-10-29 | Vapor deposition platform |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022455240.4U CN213570822U (en) | 2020-10-29 | 2020-10-29 | Vapor deposition platform |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213570822U true CN213570822U (en) | 2021-06-29 |
Family
ID=76531842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022455240.4U Active CN213570822U (en) | 2020-10-29 | 2020-10-29 | Vapor deposition platform |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213570822U (en) |
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2020
- 2020-10-29 CN CN202022455240.4U patent/CN213570822U/en active Active
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