CN213519899U - Novel integral type chute silicon boat - Google Patents

Abstract

The utility model discloses an overcome among the prior art vertical cell type carrier can't satisfy the technical problem that silicon wafer stability required among the chemical deposition technology, a novel integral type chute silicon boat is provided, including silicon boat base member and the ditch tooth's socket of establishing on the silicon boat base member, silicon boat base member includes bottom plate and the curb plate that links to each other with the bottom plate, the one end that the bottom plate was kept away from to the curb plate is equipped with the locating part, the one end that the curb plate is close to the bottom plate is equipped with support piece, locating part and support piece all are located the curb plate inboard, the curb plate includes first curb plate and the second curb plate of symmetrical arrangement in the bottom plate both sides, the ditch tooth's socket includes spacing ditch tooth's socket and supports the ditch tooth's socket, the length direction interval arrangement of a plurality of spacing ditch tooth's socket along support piece, the spacing ditch. The silicon boat can still ensure the stability of the silicon wafer when the gas flow rate changes.

Description

Novel integral type chute silicon boat

Technical Field

The utility model relates to a semiconductor manufacturing technology field especially relates to a novel integral type chute silicon boat.

Background

The silicon chip is the main substrate material of the modern super-large scale integrated circuit, and the integrated circuit grade semiconductor silicon chip is generally manufactured by the processes of crystal pulling, slicing, chamfering, lapping, corrosion, back sealing, polishing, cleaning and the like. A chemical vapor deposition process for semiconductor is used as a main film-forming technology, wherein a silicon wafer is used as a substrate, one or more compounds containing film-forming elements and simple substance gas are introduced into a reaction chamber, and a reaction substance is subjected to chemical reaction under a gaseous condition, so that a reaction product is deposited on the surface of the silicon wafer to form a film. At present, the carrier used as a silicon wafer in the chemical vapor deposition process is mainly made of quartz or silicon carbide. The temperature in the chemical vapor deposition process of the silicon wafer often exceeds 1000 ℃ and even reaches 1250 ℃, if a quartz boat is used as a carrier for bearing the silicon wafer at such a high temperature, deformation and softening can occur after long-term use, the quartz boat and the silicon wafer are different in material, the coefficients of expansion with heat and contraction with cold are inconsistent, cold spots can occur during temperature rise and temperature fall, lattice collapse is caused, crystal grain dislocation is formed, and the above factors can influence the quality of the silicon wafer. For the silicon carbide boat, along with the increase of the size of the silicon wafer, the fineness of an integrated circuit is higher and higher, the requirements of the production process are also harsher, and oxidation reaction can occur in the high-temperature treatment process to influence the quality of the silicon wafer.

The Chinese patent with the application number of CN201822193700.3 discloses an integrated silicon boat which has the advantages of simple structure, stable support, difficult deformation and the like; the method has the problems that in the chemical deposition process, gas reactants need to be introduced to stably react on a substrate, and the flow rate of the introduced gas is taken as an important control parameter, so that the deposition quality on the surface of the silicon wafer is influenced. The stability of the silicon wafer in the reaction furnace can be influenced by the speed of the gas flow velocity, and the silicon wafer can shake due to the change of the flow velocity, so that the deposition quality on the surface of the silicon wafer is influenced. With the development of semiconductor technology, the vertical trough type carrier in the above patent has failed to meet the production requirements of higher specifications, so that it is necessary to develop a better carrier to solve these problems.

Disclosure of Invention

The utility model discloses an overcome among the prior art vertical cell type carrier can't satisfy the technical problem that silicon chip stability required among the chemical deposition technology, provide a novel integral type chute silicon boat, the silicon boat still can guarantee the stability of silicon chip when the gas velocity of flow changes.

In order to achieve the above purpose, the present invention adopts the following technical solution.

The utility model provides a novel integral type chute silicon boat, include silicon boat base member and establish the ditch tooth's socket on silicon boat base member, silicon boat base member includes bottom plate and the curb plate that links to each other with the bottom plate, the one end that the bottom plate was kept away from to the curb plate is equipped with the locating part, the one end that the curb plate is close to the bottom plate is equipped with support piece, locating part and support piece all are located the curb plate inboard, the curb plate includes first curb plate and the second curb plate of symmetrical arrangement in the bottom plate both sides, the ditch tooth's socket includes spacing ditch tooth's socket and support ditch tooth's socket, the length direction interval arrangement of locating part is followed to the spacing ditch tooth's socket of a plurality of, a plurality of supports ditch tooth. In the chemical deposition process, a gas reactant needs to be introduced to stably react on a substrate, a silicon wafer borne on a traditional straight-groove silicon boat is easy to shake when the gas flow rate changes, the stability of the silicon wafer is poor, and the deposition quality of the surface of the silicon wafer is poor. The application provides an integrated chute silicon boat, a plurality of groove tooth grooves on the silicon boat incline towards the same direction, a limiting groove tooth groove and a supporting groove tooth groove are matched to form a supporting groove for bearing a silicon wafer, the supporting groove is also obliquely arranged, the silicon wafer is obliquely inserted under the guiding action of the supporting groove, the acting force exerted on the silicon wafer by airflow is decomposed, the component force for driving the silicon wafer to shake is weakened, the stability of the silicon wafer is greatly improved, and the deposition quality on the surface of the silicon wafer is synchronously improved; further, first curb plate and second curb plate symmetrical arrangement are in the bottom plate both sides in this application, and the silicon boat is symmetrical structure promptly, and support piece on the curb plate plays the effect of stable support silicon chip, and the locating part on the curb plate plays the effect of fixed protection silicon chip.

Preferably, the cross section of the gully slot is Y-shaped, the gully slot comprises a placing section and a bearing section along the depth direction of the gully slot, the cross section of the placing section is horn-shaped, the placing section comprises a large end and a small end along the thickness direction of the side plate, and the small end is communicated with the bearing section. The placing section of the gully slot is horn-shaped, and the opening of the large end is larger, so that the silicon wafer can be conveniently and quickly plugged and pulled; the groove width of bearing the weight of the section is narrower, and the silicon chip cartridge only bears the weight of the cell wall and the silicon chip contact of section in ditch tooth's socket after, compare in traditional straight flute type ditch tooth's socket, and this application has effectively reduced the area of contact of silicon chip with the silicon boat, reduces the risk that the silicon chip bumps with the carrier when loading.

Preferably, the plurality of gully slots are arranged at equal intervals along the length direction of the side plate, and the included angle between the symmetrical center line of the gully slots and the normal of the side plate is alpha. The Y-shaped groove tooth socket structure can enable the center of gravity to incline towards one side when the silicon wafer is placed, the silicon wafer cannot shake left and right when the silicon wafer is influenced by flow velocity, the distance between the silicon wafers can be shortened, the loading quantity of the silicon wafers is increased, and therefore production efficiency and production quality are improved.

As the preferred, be equipped with the stabilizer blade on the terminal surface that the curb plate was kept away from to the bottom plate, be equipped with the constant head tank on the stabilizer blade, the stabilizer blade includes first stabilizer blade and second stabilizer blade, the plane of symmetry and the coincidence of the plane of symmetry of first curb plate, second curb plate of first stabilizer blade, second stabilizer blade. The support legs are used for positioning the silicon boat in the jig of the wafer guide machine, so that the height of the silicon wafer is lifted, and the risk of contamination of the silicon wafer is reduced; the support legs are provided with positioning grooves, the positioning grooves are used for positioning the silicon boat in a wafer loading mode on an inclined plane with an inclination angle alpha in the wafer guide machine, and the wafer guide machine can insert the silicon wafer into the silicon boat along the vertical direction through angle compensation.

Preferably, the side plate is provided with a hollow window, and the hollow window is located between the limiting part and the supporting part. The side plates are provided with the hollow windows, the bottom plate can be additionally provided with the hollow windows, and the hollow windows can enable the silicon wafer to fully contact with reaction gas when the chemical vapor deposition process is carried out, so that the surface film of the silicon wafer is more uniform.

Preferably, the preparation material of the silicon boat is high-purity Czochralski polysilicon. The high-purity czochralski method polysilicon has the characteristics of high melting point and high purity which are consistent with the thermal expansion coefficient of the silicon wafer, can effectively avoid the warping of the silicon wafer and improve the surface dislocation of the silicon wafer, thereby improving the qualification rate of the silicon wafer.

Preferably, the limiting member, the side plate, the supporting member and the bottom plate are of an integrally formed structure. The silicon boat is formed by processing a polycrystalline ingot casting material, and the silicon boat is firmer in structure due to the integrally formed structure.

Preferably, α is 3 °, and the opening angle of the placing section is 60 °.

To sum up, the utility model discloses following beneficial effect has: (1) the silicon boat stably supports the silicon wafer; (2) the contact area between the silicon wafer and the silicon boat is effectively reduced, so that the risk of collision between the silicon wafer and a carrier when the silicon wafer is loaded is reduced; (3) the Y-shaped design of the gully and gully slots ensures that the silicon wafer can be plugged and pulled conveniently and quickly; (4) the stability of the silicon chip can be still ensured when the gas flow rate changes; (5) the capability of the silicon boat for bearing the number of the silicon wafers is increased; (6) the hollow window can enable the silicon wafer to fully contact with reaction gas during chemical vapor deposition, so that the surface film of the silicon wafer is more uniform, and the quality of the silicon wafer is improved; (7) the silicon boat has the same thermal expansion coefficient with the silicon wafer, so that the silicon wafer is effectively prevented from warping, the surface staggered layer of the silicon wafer is improved, and the qualified rate of the silicon wafer is increased; (8) the integrated structure makes the silicon boat firm in structure.

Drawings

Fig. 1 is a side view of the present invention.

Fig. 2 is an isometric view of the present invention.

Fig. 3 is a bottom view of the present invention.

Fig. 4 is a plan view of the present invention.

Fig. 5 is a sectional view taken along a-a in fig. 4 according to the present invention.

Fig. 6 is a schematic view of the middle gully gullet of the present invention.

In the figure:

ditch tooth's socket 1, spacing ditch tooth's socket 1.1 supports ditch tooth's socket 1.2, places section 1a, bears section 1b, bottom plate 2, curb plate 3, first curb plate 3.1, second curb plate 3.2, locating part 4, support piece 5, stabilizer blade 6, first stabilizer blade 6.1, second stabilizer blade 6.2, constant head tank 7, fretwork window 8.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention.

In the description of the present invention, it is to be understood that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships illustrated in the drawings, and are used merely for convenience of description and for simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.

In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Example (b):

as shown in fig. 1 to fig. 1, a novel integrated chute silicon boat comprises a silicon boat base body and a trench tooth socket 1 arranged on the silicon boat base body, wherein the silicon boat base body comprises a bottom plate 2 and a side plate 3 connected with the bottom plate, a limiting part 4 is arranged at one end of the side plate far away from the bottom plate, a supporting part 5 is arranged at one end of the side plate close to the bottom plate, the limiting part and the supporting part are both positioned at the inner side of the side plate, the side plate comprises a first side plate 3.1 and a second side plate 3.2 which are symmetrically arranged at two sides of the bottom plate, the trench tooth socket comprises a limiting trench tooth socket 1.1 and a supporting trench tooth socket 1.2, a plurality of limiting trench tooth sockets are arranged at intervals along the length direction of the limiting part, a plurality of supporting trench tooth sockets are arranged at intervals; the section of the gully tooth groove is Y-shaped, the gully tooth groove comprises a placing section 1a and a bearing section 1b along the depth direction of the gully tooth groove, the section of the placing section is trumpet-shaped, the placing section comprises a large end and a small end along the thickness direction of the side plate, and the small end is communicated with the bearing section; the plurality of gully slots are arranged at equal intervals along the length direction of the side plate, and the included angle between the symmetrical center line of the gully slots and the normal of the side plate is alpha; the end face of the bottom plate, far away from the side plates, is provided with a support leg 6, the support leg is provided with a positioning groove 7 and comprises a first support leg 6.1 and a second support leg 6.2, and the symmetrical surfaces of the first support leg and the second support leg are superposed with the symmetrical surfaces of the first side plate and the second side plate; the side plate is provided with a hollow window 8 which is positioned between the limiting piece and the supporting piece; the preparation material of the silicon boat is high-purity Czochralski polysilicon; the limiting piece, the side plate, the supporting piece and the bottom plate are of an integrally formed structure; alpha is 3 degrees, and the opening angle of the placing section is 60 degrees.

As shown in fig. 1, the first side plate, the bottom plate and the second side plate are sequentially arranged from left to right, the first side plate and the second side plate are symmetrically arranged along the width direction of the bottom plate, an included angle between the first side plate and the second side plate is 90 ° in this embodiment, a first limiting part and a first supporting part are arranged on the right side surface of the first side plate, the first limiting part is located above the first supporting part, a second supporting part and a second limiting part are arranged on the left side surface of the second side plate, the second limiting part is located above the second supporting part, supporting legs are arranged on the lower end surface of the bottom plate, and the supporting legs include first supporting legs and second supporting legs which are arranged from left to.

As shown in fig. 2, all be equipped with spacing ditch tooth's socket on first locating part and the second locating part, all be equipped with the support ditch tooth's socket on first supporting part and the second supporting part, spacing ditch tooth's socket and support ditch tooth's socket all arrange along the length direction of silicon boat at equal intervals, be equipped with the fretwork window on the silicon boat, all be equipped with the fretwork window on first curb plate, second curb plate and the bottom plate in this embodiment, the silicon chip fully contacts reactant gas when carrying out the chemical vapor deposition technology for silicon chip surface film is more even.

As can be seen by combining fig. 2, 4, 5 and 6, the cross section of the gully-tooth slot is Y-shaped, the gully-tooth slot comprises an upper placing section and a lower bearing section, the cross section of the placing section is horn-shaped and comprises a large end and a small end, the opening angle of the placing section in the embodiment is 60 degrees, the groove depth of the placing section is 2mm, and the integral groove depth of the gully-tooth slot is 4 mm; the tip of placing the section with bear the weight of the section intercommunication, when leading-in silicon chip, place the section and play the guide effect, the great cartridge of being convenient for of opening bears the weight of the section and plays the supporting role, compare in the area of contact of traditional straight flute type ditch tooth's socket and silicon chip, bear the weight of the area of contact of section and silicon chip and reduce by a wide margin in this application to can effectively reduce the risk of colliding with the carrier when the silicon chip carries.

As shown in fig. 5, the gully slots are arranged obliquely, and the inclination angle of the gully slots is alpha, which is 3 ° in this embodiment, with reference to one end surface of the silicon boat along the length direction; the structural design of the gully slots can enable the center of gravity to incline towards one side when the silicon wafers are placed, the left and right shaking is avoided when the silicon wafers are influenced by the flow velocity, the distance between the silicon wafers can be shortened, the loading quantity of the silicon wafers is increased, and therefore the production efficiency and the production quality are improved.

The utility model has the advantages that: the silicon boat stably supports the silicon wafer; the contact area between the silicon wafer and the silicon boat is effectively reduced; the Y-shaped design of the notch enables the silicon chip to be conveniently and quickly plugged; the stability of the silicon chip can be ensured when the gas flow rate changes; the capability of the silicon boat for bearing the number of the silicon wafers is increased; the hollow window can enable the silicon wafer to fully contact with reaction gas during chemical vapor deposition, so that the surface film of the silicon wafer is more uniform, and the quality of the silicon wafer is improved; the silicon boat has the same thermal expansion coefficient with the silicon wafer, so that the silicon wafer is effectively prevented from warping, the surface staggered layer of the silicon wafer is improved, and the qualified rate of the silicon wafer is increased; the integrated structure makes the silicon boat firm in structure.

Claims (7)

1. A novel integrated chute silicon boat is characterized by comprising a silicon boat substrate and a trench tooth socket arranged on the silicon boat substrate, wherein the silicon boat substrate comprises a bottom plate and side plates connected with the bottom plate, each side plate comprises a first side plate and a second side plate which are symmetrically arranged on two sides of the bottom plate, one end of each side plate, far away from the bottom plate, is provided with a limiting part, one end, close to the bottom plate, of each side plate is provided with a supporting part, the limiting parts and the supporting parts are both positioned on the inner sides of the side plates, the trench tooth socket comprises a limiting trench tooth socket and a supporting trench tooth socket, the limiting trench tooth sockets are arranged at intervals along the length direction of the limiting parts, the supporting trench tooth sockets are arranged at intervals along the length direction of the supporting parts, the limiting trench tooth sockets and the supporting trench tooth sockets which incline towards the same direction are matched to form a supporting trench, the cross section of the trench tooth sockets is Y-shaped, the trench tooth sockets comprise a placing section, the small end is communicated with the bearing section.

2. The novel integrated chute silicon boat as claimed in claim 1, wherein a plurality of gully gullies are arranged at equal intervals along the length direction of the side plate, and the included angle between the symmetric center line of the gully gull.

3. The novel integrated silicon boat with inclined slots as claimed in claim 1, wherein the bottom plate has support legs on its end surface away from the side plates, the support legs have positioning grooves, the support legs include a first support leg and a second support leg, and the symmetry planes of the first and second support legs coincide with the symmetry planes of the first and second side plates.

4. The novel integrated silicon boat with inclined slots as claimed in claim 1, 2 or 3, wherein the side plate is provided with a hollow window, and the hollow window is located between the position-limiting member and the supporting member.

5. The novel integrated flume silicon boat as claimed in claim 1, 2 or 3, wherein the silicon boat is made of high purity Czochralski polysilicon.

6. The novel integrated silicon boat with inclined slots as claimed in claim 1, 2 or 3, wherein the position-limiting member, the side plate, the supporting member and the bottom plate are integrally formed.

7. The novel integrated chute silicon boat as claimed in claim 2, wherein α is 3 ° and the opening angle of the placing section is 60 °.

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