CN213184238U - Silicon boat with chamfer on edge of groove tooth - Google Patents
Silicon boat with chamfer on edge of groove tooth Download PDFInfo
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- CN213184238U CN213184238U CN202022006010.XU CN202022006010U CN213184238U CN 213184238 U CN213184238 U CN 213184238U CN 202022006010 U CN202022006010 U CN 202022006010U CN 213184238 U CN213184238 U CN 213184238U
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Abstract
The utility model discloses an overcome among the prior art under the high temperature environment, with the easy technical problem who produces the fish tail phenomenon of the silicon chip of ditch tooth edge contact, provide a silicon boat of ditch tooth edge chamfer, including day board, flange and ditch stick, the ditch stick sets up between day board and flange, and ditch stick one end links to each other with the day board, and the other end and the flange of ditch stick link to each other, and the ditch stick includes body and ditch tooth, and the figure of ditch tooth is a plurality of and arranges along the length direction interval of body, and the ditch tooth is close to and is equipped with the contact boss on the terminal surface of day board, and the contact boss is close to the one end that the body was kept away from to the ditch tooth, the outer fringe of contact boss is equipped with the. This application silicon boat structure can reduce the area of contact of silicon chip and ditch tooth, reduces the emergence probability of silicon chip contact dislocation and back fish tail scheduling problem, can avoid ditch tooth border position fish tail silicon chip simultaneously.
Description
Technical Field
The utility model relates to a semiconductor element manufacturing tool technical field especially relates to a silicon boat of ditch tooth edge chamfer.
Background
The silicon chip is the main substrate material of the modern super-large scale integrated circuit, and is generally made into an integrated circuit grade semiconductor silicon chip by the processes of crystal pulling, slicing, chamfering, lapping, corrosion, back sealing, polishing, cleaning and the like. The heat treatment of silicon wafers is an important process in the process of manufacturing semiconductor devices or circuits, and the heat treatment comprises numerous processes such as CVD, oxidation, diffusion, annealing and the like, and occupies most of the process of manufacturing integrated circuits. At this time, a carrier for loading semiconductor silicon wafers is needed, the semiconductor silicon wafers are placed on the carrier and then put into a heat treatment furnace for treatment, and the carrier is called a silicon wafer boat in the industry. The boat commonly used for bearing silicon wafers in the market is made of high-purity quartz or silicon carbide. However, when the quartz boat is used as a carrier of a silicon wafer, the quartz boat may deform and soften after long-term use at a processing temperature of over 1000 ℃, which causes the process of placing the silicon wafer therein to be abnormal, and the quartz boat and the silicon wafer are made of different materials and have obviously inconsistent coefficients of expansion with heat and contraction with cold, and cold spots appear during temperature rise and fall, which causes lattice collapse and crystal grain dislocation, thereby affecting the quality of the silicon wafer. For the silicon carbide boat, along with the increase of the size of the silicon wafer, the fineness of an integrated circuit is higher and higher, the requirements of the production process are more and more strict, and oxidation reaction may occur in the high-temperature treatment process, which may affect the quality of the silicon wafer. Therefore, with the development of semiconductor technology, quartz boats or silicon carbide boats have become unable to meet the production requirements of high-standard silicon wafers. Instead, the high-purity silicon boat has good stability at high temperature, and has the same material as a silicon wafer, so that the crystal lattice defects caused by stress difference when the temperature is increased or decreased can be reduced. Although the silicon wafer is made of the same material as the silicon wafer, the common silicon boat still cannot avoid the same problem of a quartz boat and a silicon carbide boat, namely the scratch problem caused by the contact of the deformed silicon wafer and the edge of the groove tooth in a high-temperature environment.
Chinese patent publication No. CN209418473U, published as 09/20 in 2019, discloses "a trench-tooth silicon boat with a boss", which reduces the contact area between the silicon wafer and the trench tooth, but the problem of the edge of the trench tooth scratching the silicon wafer still exists.
Disclosure of Invention
The utility model discloses an overcome among the prior art under the high temperature environment, easily produce the technical problem of fish tail phenomenon with the silicon chip of ditch tooth edge contact, provide a silicon boat of ditch tooth edge chamfer, the area of contact of silicon chip and ditch tooth can be reduced to the structure, reduces the emergence probability of silicon chip contact dislocation and back fish tail scheduling problem, can avoid ditch tooth edge position fish tail silicon chip simultaneously.
In order to achieve the above purpose, the present invention adopts the following technical solution.
The utility model provides a silicon boat of ditch tooth edge chamfer, includes day board, flange and ditch stick, and the ditch stick sets up between day board and flange, and ditch stick one end links to each other with the day board, and the other end of ditch stick links to each other with the flange, and the ditch stick includes body and ditch tooth, and the figure of ditch tooth is a plurality of and arranges along the length direction interval of body, and the ditch tooth is close to and is equipped with the contact boss on the terminal surface of day board, and the contact boss is close to the one end that the body was kept away from to the ditch tooth, the outer fringe of contact boss is equipped with the chamfer. The groove teeth are equivalent to a bearing platform of a silicon wafer, the silicon wafer is usually directly placed on the platform in the prior art, but the contact area of the silicon wafer and the groove teeth is large in the bearing mode, the occurrence probability of the problems of silicon wafer contact dislocation, back scratch and the like is large, and in order to solve the problem, a contact boss is arranged on the end face of the groove teeth bearing the silicon wafer and lifts the silicon wafer, and the silicon wafer is placed on the contact boss; further, the chamfer has been laid in the outer fringe department of this application contacting the boss, with the passivation of the sharp type structure originally of contacting boss edge, smooth transition when the silicon chip is inserted and is got to can avoid ditch tooth edge position fish tail silicon chip.
Preferably, the projection shape of the groove teeth along the length direction of the body is like an isosceles trapezoid, the groove teeth comprise a large end and a small end along the length direction of the groove teeth, and the large end is connected with the body. The large end is connected with the body, and the purpose is to maintain the stability of the groove teeth on the silicon wafer support at a higher level, the projection of the groove teeth is in a similar isosceles trapezoid shape, namely the projection area of the groove teeth at the position of the contact boss on the horizontal plane is smaller, and the contact area of the silicon wafer and the groove teeth is synchronously reduced.
Preferably, an upper clamping groove is formed in the end face, close to the flange, of the top plate, a lower clamping groove is formed in the end face, close to the top plate, of the flange, the upper end of the channel bar is in matched clamping connection with the upper clamping groove, and the lower end of the channel bar is in matched clamping connection with the lower clamping groove. The structure can fix the channel bar with the top plate and the flange, and the fixing structure is stable.
Preferably, the thickness of the contact boss is 0.2mm to 0.3mm, and the projection area of the contact boss along the length direction of the body is 30mm2～50mm2. The size limitation can effectively avoid large-area contact between the silicon wafer and the groove teeth.
Preferably, the number of the groove rods is a plurality, the groove rods are arranged at intervals along the circumferential direction of the flange, the groove teeth on the groove rods are arranged in opposite directions, and a plurality of groove teeth at the same height are matched to bear the same silicon wafer.
Preferably, the chamfer is a fillet, and the chamfer part covers the outer edge of the end face of the groove tooth close to the top plate. When the silicon wafer is in a high-temperature working environment, the silicon wafer can deform, and the deformed silicon wafer is easily scratched with a sharp edge. And when the edge of the outer ring is a fillet, the deformed silicon wafer is in tangential contact with the edge, the contact condition is superior to that of a chamfer angle, and the fillet enables the deformed silicon wafer not to be scratched easily at the edge of the groove tooth. The length of the chamfer line is 2-3 times of the perimeter of the outer ring of the contact boss, the reasonable length of the chamfer line saves the processing time and reduces the processing cost.
Preferably, the top plate and the flange are both annular plates, the flange is in an annular plate-shaped structure, and the top plate is provided with a flat cut notch along the chord length direction of the top plate. In order to ensure that the silicon boat has good stability, the silicon wafer is inserted from bottom to top, the lower layer of gaps are larger, so that the silicon wafers can be freely inserted, and the upper layer of gaps can also be similarly designed to be larger, but the structural design can cause the quantity of the grooves on the lower groove rods with the same length to be reduced, and the quantity of the silicon wafers carried by the silicon boat is reduced. The upper clearance is minimum in this application, and this design can promote the upper limit that bears of silicon chip under the unchangeable condition of ditch stick length, and the truncation breach on the day board can avoid the day board to cause to be blockked the silicon chip cartridge that is close to the day board on the one hand, and on the other hand guarantees that the silicon chip cartridge is along the radial protrusion of day board, and efficiency is higher like this when top-down extracts the silicon chip, can not take place to be less than the inconvenient phenomenon of extraction that the day board size leads to because of the silicon chip size.
Preferably, the grooved bars include two front grooved bars and one rear grooved bar, the rear grooved bar being disposed normal to the flat cut gap. The corresponding groove teeth on the three groove rods form a silicon wafer accommodating groove with a large opening at one side and a small opening at the other two sides. The structure can make the silicon chip insert the storage tank easily to can utilize the manipulator to insert from the big one side of opening, the silicon chip is inserted and is established convenient and fast, and the holding security is good, and vapor deposition is even.
Preferably, the preparation material of the silicon boat is high-purity polysilicon. The silicon boat made of high-purity polysilicon has the characteristics of high melting point, high purity, thermal expansion coefficient consistent with that of a silicon wafer and the like, can effectively avoid warping of the silicon wafer and improve surface fault layers of the silicon wafer, and therefore the qualified rate of the silicon wafer is improved.
Preferably, the groove teeth and the body are integrally formed by groove cutting.
To sum up, the utility model discloses following beneficial effect has: (1) the contact area between the silicon chip and the groove teeth is reduced, and the problems of silicon chip contact dislocation, back scratch and the like are reduced; (2) the defects that the quartz boat is softened and deformed at high temperature, the silicon wafer is oxidized and polluted by the silicon carbide boat at high temperature, and the cost is high are overcome; (3) the chamfer is distributed at the outer edge of the contact boss, the original sharp structure at the edge of the contact boss is passivated, and the silicon wafer is in smooth transition during insertion and taking, so that the silicon wafer can be prevented from being scratched at the edge position of the groove teeth; (4) the manufacturing cost is reduced.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic structural view of the middle ditch rod of the present invention.
Fig. 3 is a sectional view taken along line a-a in fig. 2.
FIG. 4 is a partial schematic view of a deformed silicon wafer at a gullet tooth location.
Fig. 5 is a schematic structural view of the middle ceiling of the present invention.
Fig. 6 is a schematic structural view of the middle flange of the present invention.
In the figure:
the structure comprises a top plate 1, an upper clamping groove 1.1, a flat cut gap 1.2, a flange 2, a lower clamping groove 2.1, a groove rod 3, a front groove rod 3.1, a rear groove rod 3.2, groove teeth 3.3, a contact boss 3.4, a chamfer 3.5, a chamfer line 3.6 and a silicon chip 4.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships illustrated in the drawings, and are used merely for convenience of description and for simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1:
as shown in figures 1 to 6, the silicon boat with the chamfered edge of the groove teeth comprises a top plate 1, a flange 2 and a groove rod 3, wherein the groove rod is arranged between the top plate and the flange, one end of the groove rod is connected with the top plate, and the groove rod is connected with the top plateThe other end of the groove rod is connected with the flange, the groove rod comprises a body and a plurality of groove teeth 3.3, the number of the groove teeth is a plurality, the groove teeth are arranged at intervals along the length direction of the body, the end surface of the groove teeth, which is close to the top plate, is provided with a contact boss 3.4, the contact boss is close to one end, which is far away from the body, of the groove teeth, and the outer edge of the contact boss is provided with a chamfer 3.5; the projection shape of the groove teeth along the length direction of the body is similar to an isosceles trapezoid, the groove teeth comprise a large end and a small end along the length direction of the groove teeth, and the large end is connected with the body; an upper clamping groove 1.1 is arranged on the end face, close to the flange, of the top plate, a lower clamping groove 2.1 is arranged on the end face, close to the top plate, of the flange, the upper end of the channel bar is in matched clamping connection with the upper clamping groove, and the lower end of the channel bar is in matched clamping connection with the lower clamping groove; the thickness of the contact boss is 0.2 mm-0.3 mm, and the projection area of the contact boss along the length direction of the body is 30mm2～50mm2(ii) a The number of the groove rods is a plurality of, the groove rods are arranged at intervals along the circumferential direction of the flange, groove teeth on the groove rods are arranged in opposite directions, and a plurality of groove teeth at the same height are matched to bear the same silicon wafer 4; the chamfer is a fillet, and the chamfer partially covers the outer edge of the end face of the groove tooth close to the top plate; the top plate and the flange are both annular plates, the flange is in a circular-ring plate-shaped structure, and a flat cut gap 1.2 in the chord length direction of the top plate is formed in the top plate; the ditch stick includes two front ditch sticks 3.1 and one back ditch stick 3.2, the back ditch stick is arranged along the normal direction of the said level cut gap; the preparation material of the silicon boat is high-purity polysilicon; the groove teeth and the body are integrally formed in a groove cutting mode.
As shown in figure 1, a silicon boat of ditch tooth edge chamfer, top-down include day board, ditch stick and flange in proper order, and the ditch stick is perpendicular with day board, flange, and the ditch tooth is located the ditch stick inboard, and the cooperation of the ditch tooth that is located the different ditch sticks of same height bears same silicon chip. All be equipped with the contact boss on the up end of every ditch tooth, the ditch tooth is similar isosceles trapezoid along the projection of ditch excellent body length direction, and the ditch tooth includes main aspects and tip along its length direction, and the main aspects links to each other with the body, and the ditch stick is cut integrated into one piece through the ditch in this embodiment, and the contact boss is located the tip, and the thickness of contact boss is 0.2mm ~ 0.3mm, and the projection area of contact boss along this body length direction is 30mm2～50mm2. The silicon wafer is lifted by the contact boss and is placed on the contact bossThe area of the contact boss is smaller, so that compared with the prior art, the contact area of the silicon wafer and the groove teeth is greatly reduced, and the probability of problems such as contact dislocation of the silicon wafer and back scratch can be reduced. It can be seen in combination with fig. 3 and 4 that the edge of contact boss is equipped with the chamfer, and this chamfer part covers the edge of ditch tooth, and chamfer line 3.6 extends from the tip towards the main aspects, the chamfer is the fillet, can take place to warp under the operational environment that the silicon chip is in the high temperature, warp the silicon chip and produce the fish tail with sharp edge easily. And when the edge of the outer ring is a fillet, the deformed silicon wafer is in tangential contact with the edge, the contact condition is superior to that of a chamfer angle, and the fillet enables the deformed silicon wafer not to be scratched easily at the edge of the groove tooth. The length of the chamfer line is twice of the perimeter of the outer ring of the contact boss, the reasonable length of the chamfer line saves the processing time and reduces the processing cost.
The silicon boat material is high-purity polysilicon. The silicon boat made of the high-purity polycrystalline silicon has the characteristics of high melting point, high purity, thermal expansion coefficient consistent with that of a silicon wafer and the like, can effectively avoid warping of the silicon wafer and improve surface staggered layers of the silicon wafer, and therefore the qualified rate of the silicon wafer is improved.
Example 2:
on the basis of embodiment 1, the number of the groove rods is three, and the groove rods comprise two front groove rods and one rear groove rod, the front groove rods and the rear groove rods are vertically and uniformly distributed on the flange, corresponding groove teeth on the three groove rods are in one-to-one correspondence to form a group, and each group of groove teeth bears the same circular silicon wafer. The corresponding groove teeth on the three groove rods form a silicon wafer accommodating groove with a large opening at one side and a small opening at the other two sides. The structure can make the silicon chip insert the storage tank easily to can utilize the manipulator to insert from the big one side of opening, the silicon chip is inserted and is established convenient and fast, and the holding security is good, and vapor deposition is even.
The utility model has the advantages that: the contact area between the silicon chip and the groove teeth is reduced, and the problems of silicon chip contact dislocation, back scratch and the like are reduced; the defects that the quartz boat is softened and deformed at high temperature, the silicon wafer is oxidized and polluted by the silicon carbide boat at high temperature, and the cost is high are overcome; the chamfer is distributed at the outer edge of the contact boss, the original sharp structure at the edge of the contact boss is passivated, and the silicon wafer is in smooth transition during insertion and taking, so that the silicon wafer can be prevented from being scratched at the edge position of the groove teeth; the manufacturing cost is reduced.
Claims (10)
1. The utility model provides a silicon boat of ditch tooth edge chamfer, includes day board, flange and ditch stick, and the ditch stick sets up between day board and flange, and ditch stick one end links to each other with the day board, and the other end of ditch stick links to each other with the flange, and its characterized in that, the ditch stick includes body and ditch tooth, and the figure of ditch tooth is a plurality of and arranges along the length direction interval of body, and the ditch tooth is close to and is equipped with the contact boss on the terminal surface of day board, and the contact boss is close to the one end that the body was kept away from to the ditch tooth, the outer fringe of contact boss is equipped with the chamfer.
2. The silicon boat of claim 1, wherein the projection of the teeth along the length of the body is shaped like an isosceles trapezoid, the teeth having a major end and a minor end along the length, the major end being connected to the body.
3. The silicon boat with chamfered edge of groove tooth as claimed in claim 1, wherein the end surface of the top plate near the flange is provided with an upper slot, the end surface of the flange near the top plate is provided with a lower slot, the upper end of the groove rod is engaged with the upper slot, and the lower end of the groove rod is engaged with the lower slot.
4. The silicon boat of claim 1, wherein the thickness of the contact protrusion is 0.2mm to 0.3mm, and the projection area of the contact protrusion along the length direction of the body is 30mm2～50mm2。
5. The silicon boat of claim 1, 2, 3 or 4 wherein the number of the trench bars is several and the trench bars are arranged at intervals along the circumference of the flange, the trench teeth on the several trench bars are arranged in opposite directions, and the several trench teeth at the same height are matched to carry the same silicon wafer.
6. The silicon boat of claim 1, wherein the chamfer is a fillet, and the chamfer partially covers the outer edge of the end face of the tooth near the top plate.
7. The silicon boat of claim 1, 2, 3, 4 or 6 wherein the top plate and the flange are both annular plates, the flange is a circular plate structure, and the top plate is provided with a flat cut along the chord length direction.
8. The silicon boat of claim 7, wherein the trench bars include two front trench bars and one rear trench bar, the rear trench bar being disposed normal to the cut-to-level gap.
9. The silicon boat with chamfered edge of gullet teeth as claimed in claim 1, 2, 3, 4 or 6, wherein the prepared material of the silicon boat is high purity polysilicon.
10. The silicon boat of claim 1, 2, 3, 4 or 6 wherein said teeth are integrally gouged with said body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022006010.XU CN213184238U (en) | 2020-09-14 | 2020-09-14 | Silicon boat with chamfer on edge of groove tooth |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022006010.XU CN213184238U (en) | 2020-09-14 | 2020-09-14 | Silicon boat with chamfer on edge of groove tooth |
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| CN213184238U true CN213184238U (en) | 2021-05-11 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114920448A (en) * | 2022-05-06 | 2022-08-19 | 浙江富乐德石英科技有限公司 | Preparation method of quartz boat |
| CN115662928A (en) * | 2022-11-16 | 2023-01-31 | 杭州盾源聚芯半导体科技有限公司 | Silicon boat for reducing silicon wafer damage |
-
2020
- 2020-09-14 CN CN202022006010.XU patent/CN213184238U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114920448A (en) * | 2022-05-06 | 2022-08-19 | 浙江富乐德石英科技有限公司 | Preparation method of quartz boat |
| CN115662928A (en) * | 2022-11-16 | 2023-01-31 | 杭州盾源聚芯半导体科技有限公司 | Silicon boat for reducing silicon wafer damage |
| CN115662928B (en) * | 2022-11-16 | 2023-08-29 | 杭州盾源聚芯半导体科技有限公司 | Silicon boat for reducing silicon wafer damage |
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