CN211045392U - Horizontal type silicon boat of concatenation formula - Google Patents
Horizontal type silicon boat of concatenation formula Download PDFInfo
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- CN211045392U CN211045392U CN201921994587.7U CN201921994587U CN211045392U CN 211045392 U CN211045392 U CN 211045392U CN 201921994587 U CN201921994587 U CN 201921994587U CN 211045392 U CN211045392 U CN 211045392U
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Abstract
The utility model discloses a spliced horizontal silicon boat, which comprises two side plates, wherein a middle ditch rod and two side ditch rods are arranged between the two side plates, the middle ditch rod is arranged between the two side ditch rods, and the middle ditch rod and the two side ditch rods are arranged in a V shape; clamping bulges are arranged at two ends of the middle channel rod, and clamping counter bores matched with the clamping bulges are arranged at the lower parts of the side walls of the side plates close to the other side plate; clamping chutes are arranged at two ends of the side plates, and clamping grooves which are matched with the clamping chutes and clamped with the clamping chutes are arranged at two ends of the side channel rods; the two ends of the side plate are respectively clamped with the two side plates. The utility model provides a horizontal type silicon boat of concatenation formula, the independent processing of part, the shaping is efficient, and each part can splice fast, and does not use glue to pollute for a short time to the silicon chip.
Description
Technical Field
The utility model belongs to the technical field of the semiconductor manufacturing technique and specifically relates to a horizontal type silicon boat of concatenation formula is related to.
Background
The silicon chip is the main substrate material of the modern super-large scale integrated circuit, and the integrated circuit grade semiconductor silicon chip is generally manufactured by the processes of crystal pulling, slicing, chamfering, lapping, corrosion, back sealing, polishing, cleaning and the like. The heat treatment of the silicon wafer is an important process in the processing process of the silicon device substrate, and the heat treatment can enable oxygen in the silicon wafer to form deposition, so that the resistivity of the silicon wafer is stabilized, and the silicon wafer has very important influence on the preparation performance of an integrated circuit. During heat treatment, a carrier for loading the semiconductor silicon wafer is needed, the semiconductor silicon wafer is placed on the carrier, and then the carrier is placed in a heat treatment furnace. The supports commonly used on the market today for carrying silicon wafers are made of quartz or silicon carbide. The temperature in the heat treatment process of the silicon wafer often exceeds 1000 ℃, even reaches 1250 ℃, if a quartz boat is used as a carrier for bearing the silicon wafer at such a high temperature, deformation and softening can occur after long-time use, the quartz boat and the silicon wafer are different in material and inconsistent in coefficient of expansion with heat and contraction with cold, cold spots can occur during temperature rise and temperature fall, lattice collapse is caused, crystal grain dislocation is formed, and the quality of the silicon wafer can be influenced by the factors. For the silicon carbide boat, along with the increase of the size of the silicon wafer, the fineness of an integrated circuit is higher and higher, the requirements of the production process are also harsher, and oxidation reaction can occur in the high-temperature treatment process to influence the quality of the silicon wafer. There is also a silicon boat which is assembled and welded together by a plurality of parts, and the welding method used at present is to weld and combine the parts at high temperature by glue. Because the material of glue itself is different with the material of silicon boat, glue spills over easily and pollutes the silicon chip in the use under high temperature, also has the hidden danger of coming unstuck disintegration when each part of silicon boat is used simultaneously. As the development of semiconductor technology has become unable to meet the production requirements of high-standard silicon wafers, better silicon boats have to be developed to solve these problems.
Disclosure of Invention
The utility model discloses an overcome among the prior art not enough that silicon boat glue pollutes the silicon chip easily, provide a horizontal type silicon boat of concatenation formula, the independent processing of part, the shaping is efficient, and each part can splice fast, and does not use glue to pollute the silicon chip for a short time.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
a spliced horizontal silicon boat comprises two side plates, wherein a middle trench rod and two side trench rods are arranged between the two side plates, the middle trench rod is arranged between the two side trench rods, and the middle trench rod and the two side trench rods are arranged in a V shape; clamping bulges are arranged at two ends of the middle channel rod, and clamping counter bores matched with the clamping bulges are arranged at the lower parts of the side walls of the side plates close to the other side plate; clamping chutes are arranged at two ends of the side plates, and clamping grooves which are matched with the clamping chutes and clamped with the clamping chutes are arranged at two ends of the side channel rods; the two ends of the side plate are respectively clamped with the two side plates.
In the technical scheme, the silicon boat is made of high-purity czochralski polysilicon. The high-purity czochralski method polycrystalline silicon has the characteristics of high melting point and high purity and the thermal expansion coefficient consistent with that of a silicon wafer, can effectively avoid the warping of the silicon wafer and improve the surface fault layer of the silicon wafer, thereby improving the qualification rate of the silicon wafer. The horizontal silicon boat can be spliced quickly, each part is processed independently, and the forming efficiency is high. The left side ditch stick, the rear side board, the middle ditch stick and the front side board are sequentially connected end to form a first hollow window; the right side ditch stick, the rear side plate, the middle ditch stick and the front side plate are sequentially connected end to form a second hollow window. The two hollow windows can enable the silicon wafer to have more uniform gas and temperature distribution in a vapor deposition process or a high-temperature annealing process, and the quality of the silicon wafer is improved.
Preferably, the clamping chute is obliquely arranged, and an opening of the clamping chute faces obliquely upwards. The joint chute can make things convenient for the quick concatenation of side ditch stick and curb plate, during the concatenation, only need aim at the joint recess on the side ditch stick the joint chute gently block in can. After the clamping grooves at the two ends of the side channel bar are respectively clamped with the two side plates, the positioning and fixing in the length direction of the side channel bar can be realized. The clamping chute is obliquely arranged, so that the stability of clamping can be still ensured even if silicon wafers are placed on the silicon boat.
Preferably, the bottom of the clamping chute is provided with a positioning bottom surface and a positioning side surface, and the positioning bottom surface is perpendicular to the positioning side surface. The positioning bottom surface and the positioning side surface can position the side ditch rod from the horizontal direction and the vertical direction, and the mounting accuracy and stability are ensured.
Preferably, the clamping counter bore is of a square structure, and an arc angle is arranged at the edge of the clamping counter bore. The clamping counter bore with the square structure is convenient for limiting the middle ditch rod, and the relative side plate can not rotate after the middle ditch rod is clamped. The arc angle can reduce the processing difficulty and can also avoid colliding with the corner of the middle ditch rod.
Preferably, one diagonal line of the square of the clamping counter bore is coincident with the vertical plane. The structure enables two side surfaces of the lower part of the clamping counter bore to form a V-shaped structure, so that the middle ditch rod can be positioned, and the installation precision of the middle ditch rod is ensured.
Preferably, the arc angle at the bottom of the clamping counter bore is communicated with the outside downwards. The structure is convenient to process.
Preferably, the middle groove rod and the two side groove rods are provided with V-shaped tooth grooves, and the V-shaped tooth grooves on the middle groove rod and the two side groove rods correspond to each other one by one. A plurality of silicon chips can be placed on the silicon boat in a one-to-one correspondence mode through the V-shaped tooth grooves, and the notches are designed into V-shaped silicon chips to be conveniently and quickly inserted and pulled.
Preferably, the bottom surface of the V-shaped tooth groove is of an inverted U-shaped structure. The bottom reverse U-shaped structure can enable the silicon wafer to be in three-point linear contact with the boat body, so that the contact area is greatly reduced, the pollution to the silicon wafer is reduced, and the quality of the silicon wafer is improved. The V-shaped tooth grooves are short teeth, so that the contact area of the silicon wafer and the silicon boat can be effectively reduced through the design of the short teeth, and the effective silicon wafer bearing capacity of the silicon boat cannot be reduced.
The utility model has the advantages that: (1) parts are independently processed, and the forming efficiency is high; (2) the side surface of the tooth groove is of a V-shaped structure, the bottom of the V-shaped tooth groove is of a reverse U-shaped design, three-point linear contact is formed, and the contact area is small; (3) the notch is V-shaped, and the silicon chip is convenient and quick to insert and pull; (4) the silicon boat is fixed through the clamping groove, so that the silicon boat is convenient to assemble and disassemble and occupies no space for storage; (5) the silicon boat has the same thermal expansion coefficient with the silicon wafer, so that the silicon wafer is effectively prevented from warping, the surface staggered layer of the silicon wafer is improved, and the qualified rate of the silicon wafer is increased; (6) the splicing structure avoids the pollution of glue at the joint; (7) the hollow window can enable the silicon wafer to have more uniform gas and temperature distribution in a vapor deposition process or a high-temperature annealing process, and the quality of the silicon wafer is improved.
Drawings
Fig. 1 is a schematic structural diagram of the present invention;
FIG. 2 is a schematic structural view of a side plate of the present invention;
FIG. 3 is a schematic structural view of the middle channel bar of the present invention;
FIG. 4 is a schematic structural view of the middle gutter bar of the present invention;
fig. 5 is a schematic structural view of the V-shaped tooth socket of the present invention.
In the figure: the clamping structure comprises a side plate 1, a clamping counter bore 1.1, a clamping chute 1.2, a positioning bottom surface 1.2.1, a positioning side surface 1.2.2, a side groove rod 2, a clamping groove 2.1, a middle groove rod 3, a clamping bulge 3.1 and a V-shaped tooth groove 4.
Detailed Description
The invention is further described with reference to the accompanying drawings and specific embodiments.
Example 1:
as shown in fig. 1, a spliced horizontal silicon boat comprises two side plates 1, a middle trench rod 3 and two side trench rods 2 are arranged between the two side plates 1, the middle trench rod 3 is arranged between the two side trench rods 2, and the middle trench rod 3 and the two side trench rods 2 are arranged in a V shape; the two side channel bars 2 are symmetrically arranged, and the symmetrical surfaces of the two side channel bars 2 are superposed with the symmetrical surface of the middle channel bar 3; the two side plates 1, the middle groove rod 3 and the two side groove rods 2 are made of high-purity Czochralski polysilicon. The left side ditch stick 2, the rear side plate 1, the middle ditch stick 3 and the front side plate 1 are sequentially connected end to enclose a first hollow window; the right side ditch stick 2, the rear side plate 1, the middle ditch stick 3 and the front side plate 1 are sequentially connected end to enclose a second hollow window. The two hollow windows can enable the silicon wafer to have more uniform gas and temperature distribution in a vapor deposition process or a high-temperature annealing process, and the quality of the silicon wafer is improved.
As shown in fig. 5, the middle groove rod 3 and the two side groove rods 2 are provided with V-shaped tooth grooves 4, the opening angle of the V-shaped tooth grooves 4 is 20 degrees, the groove depth of the V-shaped tooth grooves 4 on the side groove rods 2 is 2.74mm, and the groove depth of the V-shaped tooth grooves 4 on the middle groove rod 3 is 3.00 mm; the middle groove rod 3 corresponds to the V-shaped tooth grooves 4 on the two side groove rods 2 one by one; the bottom surface of the V-shaped tooth groove 4 is of a reverse U-shaped structure. The V-shaped tooth groove 4 enables the silicon wafer to be plugged and pulled more conveniently and quickly, the holding safety is better, and the problem that the square groove is blocked easily due to the fact that the contact surface is too large is avoided. The bottom reverse U-shaped structure can make the silicon wafer and the boat body in three-point linear contact, so that the contact area is greatly reduced, the pollution to the silicon wafer is reduced, and the quality of the silicon wafer is improved. The gullet tooth grooves are short teeth, so that the contact area of the silicon wafer and the silicon boat can be effectively reduced by the design of the short teeth, but the effective silicon wafer bearing capacity of the silicon boat can not be reduced.
As shown in fig. 2 and 3, clamping protrusions 3.1 are arranged at two ends of the middle channel rod 3, and clamping counter bores 1.1 matched with the clamping protrusions 3.1 are arranged at the lower parts of the side walls of the side plates 1 close to the other side plate 1; the clamping counter bore 1.1 is of a square structure, an arc angle is arranged at the corner of the clamping counter bore 1.1, and one diagonal line of the square of the clamping counter bore 1.1 is superposed with a vertical surface, so that two side surfaces at the lower part of the clamping counter bore 1.1 form a V-shaped structure; the arc angle at the bottom of the clamping counter bore 1.1 is communicated with the outside downwards. The clamping counter bore 1.1 with the square structure is convenient for limiting the middle ditch rod 3, and the middle ditch rod 3 can be prevented from rotating relative to the side plate 1 after being clamped. The arc angle can reduce the processing difficulty and can also avoid colliding with the corner of the middle ditch rod 3. The V-shaped structure formed by the two side surfaces at the lower part of the clamping counter bore 1.1 can position the middle ditch rod 3 and ensure the installation precision.
As shown in fig. 2 and 4, two ends of the side plate 1 are provided with clamping chutes 1.2, and two ends of the side channel bar 2 are provided with clamping grooves 2.1 which are matched with and clamped with the clamping chutes 1.2; two ends of the side plate 1 are respectively clamped with the two side groove rods 2; the clamping chute 1.2 is obliquely arranged, and an opening of the clamping chute 1.2 faces obliquely upwards; the bottom of the clamping chute 1.2 is provided with a positioning bottom surface 1.2.1 and a positioning side surface 1.2.2, and the positioning bottom surface 1.2.1 is vertical to the positioning side surface 1.2.2. Joint chute 1.2 can make things convenient for side ditch stick 2 and curb plate 1's quick concatenation, during the concatenation, only need with the joint recess 2.1 on the side ditch stick 2 aim at joint chute 1.2 gently the card go into can. After the clamping grooves 2.1 at the two ends of the side ditch rod 2 are respectively clamped with the two side plates 1, the positioning and fixing in the length direction of the side ditch rod 2 can be realized. The clamping chute 1.2 is obliquely arranged, so that the stability of clamping can be still ensured even if silicon wafers are put into the silicon boat. The positioning bottom surface 1.2.1 and the positioning side surface 1.2.2 can position the lateral ditch rod 2 from the horizontal direction and the vertical direction, and the mounting accuracy and stability are ensured.
In the technical scheme, the silicon boat is made of high-purity czochralski polysilicon. The high-purity czochralski method polycrystalline silicon has the characteristics of high melting point and high purity and the thermal expansion coefficient consistent with that of a silicon wafer, can effectively avoid the warping of the silicon wafer and improve the surface fault layer of the silicon wafer, thereby improving the qualification rate of the silicon wafer.
The utility model has the advantages that: parts are independently processed, and the forming efficiency is high; the side surface of the tooth groove is of a V-shaped structure, the bottom of the V-shaped tooth groove is of a reverse U-shaped design, three-point linear contact is formed, and the contact area is small; the notch is V-shaped, and the silicon chip is convenient and quick to insert and pull; the silicon boat is fixed through the clamping groove, so that the silicon boat is convenient to assemble and disassemble and occupies no space for storage; the silicon boat has the same thermal expansion coefficient with the silicon wafer, so that the silicon wafer is effectively prevented from warping, the surface staggered layer of the silicon wafer is improved, and the qualified rate of the silicon wafer is increased; the splicing structure avoids the pollution of glue at the joint; the hollow window can enable the silicon wafer to have more uniform gas and temperature distribution in a vapor deposition process or a high-temperature annealing process, and the quality of the silicon wafer is improved.
Claims (8)
1. A spliced horizontal silicon boat is characterized by comprising two side plates, wherein a middle ditch rod and two side ditch rods are arranged between the two side plates, the middle ditch rod is arranged between the two side ditch rods, and the middle ditch rod and the two side ditch rods are arranged in a V shape; clamping bulges are arranged at two ends of the middle channel rod, and clamping counter bores matched with the clamping bulges are arranged at the lower parts of the side walls of the side plates close to the other side plate; clamping chutes are arranged at two ends of the side plates, and clamping grooves which are matched with the clamping chutes and clamped with the clamping chutes are arranged at two ends of the side channel rods; the two ends of the side plate are respectively clamped with the two side plates.
2. The spliced horizontal silicon boat as claimed in claim 1, wherein the clamping chute is disposed obliquely with the opening of the clamping chute facing obliquely upward.
3. The spliced horizontal silicon boat as claimed in claim 2, wherein the bottom of the clamping chute is provided with a positioning bottom surface and a positioning side surface, and the positioning bottom surface is perpendicular to the positioning side surface.
4. The spliced horizontal silicon boat as claimed in claim 1, 2 or 3, wherein the clamping counter bore is square, and the corner of the clamping counter bore is provided with a circular arc angle.
5. The spliced horizontal silicon boat as claimed in claim 4, wherein one diagonal line of the square of the clamping counter bore coincides with the vertical plane.
6. The spliced horizontal silicon boat as claimed in claim 5, wherein the circular arc angle at the bottom of the clamping counter bore is downward communicated with the outside.
7. The spliced horizontal silicon boat as claimed in claim 1, 2 or 3, wherein the middle and two side trench rods are provided with V-shaped tooth grooves, and the V-shaped tooth grooves on the middle and two side trench rods are in one-to-one correspondence.
8. The spliced horizontal silicon boat as claimed in claim 7, wherein the bottom surface of the V-shaped tooth groove is of an inverted U-shaped structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921994587.7U CN211045392U (en) | 2019-11-18 | 2019-11-18 | Horizontal type silicon boat of concatenation formula |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921994587.7U CN211045392U (en) | 2019-11-18 | 2019-11-18 | Horizontal type silicon boat of concatenation formula |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211045392U true CN211045392U (en) | 2020-07-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921994587.7U Active CN211045392U (en) | 2019-11-18 | 2019-11-18 | Horizontal type silicon boat of concatenation formula |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211045392U (en) |
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2019
- 2019-11-18 CN CN201921994587.7U patent/CN211045392U/en active Active
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201218 Address after: Building C, no.668 BINKANG Road, Binjiang District, Hangzhou City, Zhejiang Province Patentee after: Hangzhou dunyuan poly core semiconductor technology Co., Ltd Address before: 310053 668, 777, BINKANG Road, Binjiang District, Hangzhou, Zhejiang. Patentee before: HANGZHOU DAHE THERMO-MAGNETICS Co.,Ltd. |