CN218414513U - Crystal boat and diffusion equipment - Google Patents

Abstract

The application discloses a wafer boat and diffusion equipment, and relates to the technical field of semiconductors, wherein the wafer boat comprises a plurality of support columns, a first support plate and a second support plate, wherein the support columns are arranged between the first support plate and the second support plate and are connected with the first support plate and the second support plate; each supporting column is provided with a plurality of bearing parts, the bearing parts on the same horizontal plane on each supporting column bear wafers, and the wafers comprise product wafers and control wafer wafers; the bearing part comprises a plurality of product bearing parts and a plurality of control wafer bearing parts, the width of the control wafer bearing part in the direction perpendicular to the support columns is smaller than the width of the product bearing part in the direction perpendicular to the support columns, and/or the distance between every two adjacent control wafer bearing parts is smaller than the distance between every two adjacent product bearing parts. This application is through above mode, improves because the width and the interval homogeneous phase of bearing the weight of portion on the wafer boat are the same, leads to the control wafer membrane thick inconsistent with actual product, influences the problem that the rete detected the precision.

Description

Crystal boat and diffusion equipment

Technical Field

The application relates to the technical field of semiconductor electronics, in particular to a wafer boat and diffusion equipment.

Background

Polysilicon plays an important role in the semiconductor field, and is mainly used as a gate material, so the quality of the silicon gate growth determines the performance of the whole semiconductor device. The growth of the polysilicon is influenced by the manufacturing conditions, the spacing and the modeling of the wafer boat,

at present, all traditional crystal boats are in the same shape (the groove width and the groove spacing are kept consistent), in the actual production process, because the reaction of a wafer is the thermal decomposition of silane, polycrystalline silicon (dust) is generated and deposited on the surface of the wafer, the surface of a control wafer is a flat surface, and a product is in a shape with an isolation groove filler after photoetching and alignment, the actual thickness of the product is larger than the thickness of the control wafer, and in the traditional crystal boat type, the width of a bearing part for bearing the wafer is kept consistent with the spacing design, so that the thickness data of a monitoring wafer film for monitoring process parameters after deposition is about 40-60A thicker than the actual deposition film of the product, and the accuracy of the process parameters is influenced.

Therefore, how to improve the problem that the thickness of the control wafer film is inconsistent with the actual product due to the same width and spacing of the carrying parts on the wafer boat, which affects the precision of the process parameters, becomes a problem to be solved in the art.

SUMMERY OF THE UTILITY MODEL

The purpose of the embodiment of the application is to provide a wafer boat and diffusion equipment, effectively improve because the width and the interval homogeneous phase of bearing part are the same on the wafer boat, lead to the control wafer membrane thick inconsistent with actual product, influence the problem of rete detection precision.

The application discloses a wafer boat which comprises a plurality of supporting columns, a first supporting plate and a second supporting plate, wherein the plurality of supporting columns are arranged between the first supporting plate and the second supporting plate and are connected with the first supporting plate and the second supporting plate; each supporting column is provided with a plurality of bearing parts, the bearing parts on the same horizontal plane on each supporting column bear wafers, and the wafers comprise product wafers and control wafer wafers; the bearing part comprises a plurality of product bearing parts and a plurality of control wafer bearing parts, the product bearing parts are used for bearing the product wafers, and the control wafer bearing parts are used for bearing the control wafer; the width of the control wafer bearing part perpendicular to the direction of the supporting column is smaller than the width of the product bearing part perpendicular to the direction of the supporting column, and/or the distance between two adjacent control wafer bearing parts is smaller than the distance between two adjacent product bearing parts.

Optionally, the width of the product bearing portion perpendicular to the supporting column direction is L1, the width of the control wafer bearing portion perpendicular to the supporting column direction is L2, and L1 satisfies the following relation: l1 is more than or equal to 1mm and less than or equal to 1.2mm; l2 satisfies the following relation: l1 is more than or equal to 845 μm and less than or equal to 855 μm.

Optionally, the width of the product bearing portion perpendicular to the support column direction is 1.1 mm, and the width of the control wafer bearing portion perpendicular to the support column direction is 850 micrometers.

Optionally, the distance between two adjacent product bearing parts is X1, and the distance between two adjacent control wafer bearing parts is X2; x1 and X2 are in the relation: 2 < X1/X2 < 3.

Optionally, a width of the control wafer carrying portion in a direction perpendicular to the support column is smaller than a width of the product carrying portion in a direction perpendicular to the support column, and a distance between two adjacent control wafer carrying portions is equal to a distance between two adjacent product carrying portions.

Optionally, a width of the control wafer carrying portion in a direction perpendicular to the support column is equal to a width of the product carrying portion in a direction perpendicular to the support column, and a distance between two adjacent control wafer carrying portions is smaller than a distance between two adjacent product carrying portions.

Optionally, a width of the control wafer bearing part perpendicular to the support column direction is smaller than a width of the product bearing part perpendicular to the support column direction, and a distance between two adjacent control wafer bearing parts is smaller than a distance between two adjacent product bearing parts.

Optionally, a protrusion is disposed on the product bearing portion, and an end surface of one end of the protrusion, which is far away from the product bearing portion, is a plane.

Optionally, a first through hole is formed in the middle of the protrusion, a second through hole is formed in the product bearing portion, and the first through hole is arranged corresponding to the second through hole.

The application also discloses diffusion equipment, including the furnace body, diffusion equipment still includes: the boat is arranged in the furnace body.

The method aims at the length of the control wafer bearing part perpendicular to the support column and the distance between two adjacent control wafer bearing parts, the width of the control wafer bearing part or the distance between two adjacent control wafer bearing parts is adjusted, at least one of the two sizes is correspondingly smaller than the width of the product bearing part or the distance between two adjacent product bearing parts, when the width of the control wafer bearing part or the distance between two adjacent control wafer bearing parts is smaller than the product bearing part, the circulation of reaction gas at the control wafer bearing part can be effectively reduced, the reaction time of the reaction gas and a control wafer on the control wafer bearing part is delayed, the speed of generating a deposition film by the control wafer is reduced, the thickness difference of the actual deposition film of the control wafer and the product wafer is improved, and the thicknesses of the deposition films formed by the control wafer and the product wafer tend to be consistent. The problem that the film thickness of a control wafer is not consistent with an actual product due to the fact that the width and the distance of the bearing part on the wafer boat are the same is effectively solved, the film detection precision is affected, and the wafer detection precision of a product is further improved.

Drawings

The accompanying drawings, which are included to provide a further understanding of the embodiments of the application, are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:

FIG. 1 is a schematic view of a wafer boat according to a first embodiment of the present application;

FIG. 2 is a schematic view of a second embodiment of a boat according to the present application;

FIG. 3 is a schematic view of a third embodiment of a boat according to the present application;

FIG. 4 is a schematic view of a fourth embodiment of a boat according to the present application;

FIG. 5 is a schematic view of a fifth embodiment of a boat according to the present application;

FIG. 6 is a schematic view of an embodiment of a diffusion device of the present application.

10, diffusion equipment; 100. a wafer boat; 110. a first support plate; 120. a second support plate; 130. a support pillar; 131. a bearing part; 132. a control wafer bearing part; 133. a product carrying portion; 134. clamping and supporting; 135. a protrusion; 136. a first through hole; 137. a second through hole; 200. a furnace body; 300. a wafer; 310. a control wafer; 320. and (5) producing the wafer.

Detailed Description

It is to be understood that the terminology, the specific structural and functional details disclosed herein are for the purpose of describing particular embodiments only, and are representative, but that the present application may be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.

In the description of the present application, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating relative importance or as implicitly indicating the number of technical features indicated. Thus, unless otherwise specified, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature; "plurality" means two or more. The terms "comprises" and "comprising," and any variations thereof, are intended to cover a non-exclusive inclusion, such that one or more other features, integers, steps, operations, elements, components, and/or combinations thereof may be present or added.

Further, terms of orientation or positional relationship indicated by "center", "lateral", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, are described based on the orientation or relative positional relationship shown in the drawings, are simply for convenience of description of the present application, and do not indicate that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present application.

Furthermore, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly and may include, for example, fixed connections, removable connections, and integral connections; can be mechanically or electrically connected; either directly or indirectly through intervening media, or through both elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.

The present application is described in detail below with reference to the figures and alternative embodiments.

Fig. 1 is a schematic view of a first embodiment of a boat according to the present application, and as shown in fig. 1, the present application discloses a boat 100 comprising a plurality of support columns 130, a first support plate 110 and a second support plate 120, wherein the plurality of support columns 130 are disposed between the first support plate 110 and the second support plate 120 and connected to the first support plate 110 and the second support plate 120; each support column 130 is provided with a plurality of carrying parts 131, the carrying parts 131 corresponding to the support columns 130 carry the wafer 300 together, and the wafer 300 comprises a product wafer 320 and a control wafer 310; the carrier 131 includes a plurality of product carriers 133 and a plurality of wafer carriers 132, wherein the product carriers 133 are used for carrying the product wafers 320, and the wafer carriers 132 are used for carrying the wafer wafers 310; the width of the control wafer bearing parts 132 in the direction perpendicular to the support columns 130 is smaller than the width of the product bearing parts 133 in the direction perpendicular to the support columns 130, and/or the distance between two adjacent control wafer bearing parts 132 is smaller than the distance between two adjacent product bearing parts 133.

The application adjusts the width of the control wafer bearing part 132 perpendicular to the supporting column 130 and the distance between two adjacent control wafer bearing parts 132, and at least one of the two dimensions is correspondingly smaller than the width of the product bearing part 133 or the distance between two adjacent product bearing parts 133, when the width of the control wafer bearing part 132 or the distance between two adjacent control wafer bearing parts 132 is smaller than the product bearing part 133, the circulation of the reaction gas at the control wafer bearing part 132 can be effectively reduced, the reaction time of the reaction gas and the control wafer 310 on the control wafer bearing part 132 is delayed, the speed of generating the deposition layer of the control wafer 310 is reduced, the thickness difference of the actual deposition layers of the control wafer 310 and the product wafer 320 is improved, and the thickness of the deposition layers formed by the control wafer 310 and the product wafer 320 tends to be consistent. The problem that the film detection accuracy is affected due to the fact that the thickness of the control wafer film is inconsistent with the actual product because the width and the distance of the bearing part 131 on the wafer boat 100 are the same is effectively solved, and the detection accuracy of the product wafer 320 is further improved.

It should be noted that, in the present application, the control wafer carrying portions 132 and the product carrying portions 133 may be both card slots recessed from the supporting columns 130, or both the control wafer carrying portions 132 and the product carrying portions 133 may be card holders 134 protruding from the supporting columns 130, which is not limited in particular, and the present application only exemplifies that the control wafer carrying portions 132 and the product carrying portions 133 are both the card holders 134, when the control wafer carrying portions 132 and the product carrying portions 133 are both the card holders 134, the control wafer 310 and the product wafer 320 are both placed in the card holders 134 of the plurality of supporting columns 130, the card holders 134 corresponding to the plurality of supporting columns 130 form a common support for the control wafer 310 and the product wafer 320, wherein each supporting column 130 generally has three control wafer carrying portions 132, and the three control wafer carrying portions 132 are generally disposed corresponding to the upper, middle, and lower three portions of the supporting portions, and the plurality of carrying portions 131 between two control wafer carrying portions 132 are all the product carrying portions 133.

Specifically, the width of the control wafer bearing portions 132 in the direction perpendicular to the support columns 130 is smaller than the width of the product bearing portions 133 in the direction perpendicular to the support columns 130, and the distance between two adjacent control wafer bearing portions 132 is equal to the distance between two adjacent product bearing portions 133.

In this embodiment, the width of the control wafer bearing part 132 in the direction perpendicular to the support columns 130 is reduced in a targeted manner, without changing the distance between the control wafer bearing parts 132, and the space of the control wafer bearing part 132 is reduced by reducing the width of the control wafer bearing part 132, so that when the reaction gas is introduced into the control wafer bearing part 132, the circulation of the reaction gas is reduced due to the smaller space of the control wafer bearing part 132, the reaction rate between the reaction gas and the control wafer 310 on the control wafer bearing part 132 is delayed, and the speed of forming a deposition layer by the control wafer 310 is reduced; when the reaction gas is introduced into the product bearing part 133 and the wafer control bearing part 132 at the same time, the gas fluidity at the product bearing part 133 is better than that at the wafer control bearing part 132, and the reaction gas is more fully contacted with the product wafer 320 on the product bearing part 133; even if the product wafer 320 needs to form a polysilicon film layer in a photolithography groove (usually, the surface of the product wafer 320 needs to be photolithographically formed into a groove, which is called a photolithography groove), the photolithography groove will reduce the speed of producing the polysilicon film layer, but because the reaction gas has better circulation, the reaction speed with the product wafer 320 is increased accordingly, the required polysilicon film layer can be rapidly generated on the product wafer 320, and the gas mobility of the reaction gas on the wafer carrier 132 is significantly weaker than that of the reaction gas on the wafer carrier 133, so the reaction speed of the reaction gas with the wafer 310 on the wafer carrier 132 is slower, and the speed of forming a deposition layer is also slower.

Namely, by improving the wafer carrying portion 132, the reaction rate of the product wafer 320 which originally reacts with the reaction gas at a slower rate is relatively increased, the reaction rate of the wafer 310 which originally reacts with the reaction gas at a faster rate is reduced, so that the reaction rate and the reaction rate tend to be balanced, the influence of the lower reaction rate caused by the photoetching grooves is effectively improved, the thickness of the final product wafer 320 tends to be consistent with that of the wafer 310, the problem of the influence on the film detection accuracy caused by the inconsistency between the thickness of the wafer and the actual product due to the same width and spacing of the carrying portion 131 on the wafer boat 100 is effectively improved, and the detection accuracy of the product wafer 320 is further improved.

In order to further improve the gas fluidity of the reaction gas in the product bearing portion 133 and reduce the gas fluidity of the reaction gas in the control wafer bearing portion 132, the present application also defines the dimensions of the product bearing portion 133 and the control wafer bearing portion 132, the width of the product bearing portion 133 perpendicular to the direction of the support columns 130 is L1, the width of the control wafer bearing portion 132 perpendicular to the direction of the support columns 130 is L2, and L1 satisfies the following relational expression: l1 is more than or equal to 1mm and less than or equal to 1.2mm; l2 satisfies the following relation: l1 is more than or equal to 845 μm and less than or equal to 855 μm.

In practical production, the width of the product bearing portion 133 in the wafer boat 100 of the present application in the direction perpendicular to the supporting columns 130 may be 1.1 mm, and the width of the wafer control bearing portion 132 is 850 μm. By adopting the size design, the problem that the film thickness of the control wafer is inconsistent with the actual product due to the fact that the width and the distance of the bearing part 131 on the wafer boat 100 are the same, the detection precision of the film layer is influenced is effectively solved, and the detection precision of the wafer 320 is further improved.

Fig. 2 is a schematic view of a second embodiment of the boat of the present application, as shown in fig. 2, the width of the wafer control loading portions 132 in the direction perpendicular to the supporting columns 130 is equal to the width of the product loading portions 133 in the direction perpendicular to the supporting columns 130, and the distance between two adjacent wafer control loading portions 132 is smaller than the distance between two adjacent product loading portions 133.

The difference between this embodiment and the previous embodiment is that the distance between the monitor wafer carrying portions 132 is reduced, without changing the width of the monitor wafer carrying portions 132, and the space of the monitor wafer carrying portions 132 is reduced by reducing the monitor wafer carrying portions 132, so that when the reaction gas is introduced into the monitor wafer carrying portions 132, the space of the monitor wafer carrying portions 132 is smaller, the circulation of the reaction gas is reduced, the reaction rate between the reaction gas and the monitor wafer 310 on the monitor wafer carrying portions 132 is delayed, and the speed of forming the deposition layer by the monitor wafer 310 is reduced; when the reaction gas is introduced into the product bearing portion 133 and the wafer control bearing portion 132 at the same time, the gas fluidity at the product bearing portion 133 is better than that at the wafer control bearing portion 132, and the reaction gas is in contact with the product wafer 320 on the product bearing portion 133 more sufficiently; the gas fluidity of the reaction gas on the wafer carrying portion 132 is obviously weaker than the gas fluidity of the reaction gas on the product carrying portion 133, so the reaction speed of the reaction gas and the wafer 310 on the wafer carrying portion 132 is slower, the speed of forming a deposition layer is also slower, the influence of the lower reaction speed caused by the photoetching grooves is effectively improved, the thickness of the final product wafer 320 tends to be consistent with that of the wafer 310, the problem that the film thickness of the wafer is inconsistent with the actual product due to the fact that the width and the distance of the carrying portions 131 on the wafer boat 100 are the same, the detection accuracy of the wafer 320 is influenced is effectively improved, and the detection accuracy of the wafer 320 is further improved.

Specifically, the distance between two adjacent product bearing portions 133 is X1, and the distance between two adjacent control wafer bearing portions 132 is X2; x1 and X2 are in the relation: 2 < X1/X2 < 3.

By adopting the above ratio, the distance between two adjacent product bearing parts 133 is obviously larger than the distance between two adjacent control wafer bearing parts 132, the fluidity of the reaction gas at the product bearing parts 133 is obviously better than that at the control wafer bearing parts 132, when the reaction gas is introduced into the product bearing parts 133 and the control wafer bearing parts 132 at the same time, the gas fluidity at the product bearing parts 133 is better, and the reaction gas is more fully contacted with the product wafers 320 on the product bearing parts 133; the gas fluidity of the reaction gas on the wafer carrying portion 132 is obviously lower than the gas fluidity of the reaction gas on the product carrying portion 133, so that the reaction speed of the reaction gas and the wafer 310 on the wafer carrying portion 132 is lower, the speed of forming a deposition layer is also lower, the influence of the lower reaction speed caused by the photoetching grooves is effectively improved, the thickness of the final product wafer 320 tends to be consistent with that of the wafer 310, the problem that the film thickness of the wafer is inconsistent with the actual product due to the fact that the width and the distance of the carrying portions 131 on the wafer boat 100 are the same, the detection accuracy of the film layer is influenced is effectively solved, and the detection accuracy of the wafer 320 is further improved.

Fig. 3 is a schematic view of a third embodiment of the boat of the present application, as shown in fig. 3, the width of the wafer control loading portions 132 in the direction perpendicular to the supporting columns 130 is smaller than the width of the product loading portions 133 in the direction perpendicular to the supporting columns 130, and the distance between two adjacent wafer control loading portions 132 is smaller than the distance between two adjacent product loading portions 133.

Different from the previous embodiment, in order to further reduce the reaction efficiency between the control wafer carrying part 132 and the reaction gas, the present embodiment adopts a design of simultaneously reducing the width of the control wafer carrying part 132 and the space between the plurality of control wafer carrying parts 132, and further reduces the flow space of the reaction gas at the control wafer carrying part 132, so that the reaction efficiency of the reaction gas reacting with the control wafer 310 on the control wafer carrying part 132 is reduced, and the rate of generating the deposition layer on the control wafer 310 is further delayed, so that when a standard-compliant polysilicon film layer is formed on the product wafer 320, the thickness of the deposition layer on the control wafer 310 is not too thick, the thicknesses of the control wafer 310 and the product wafer 320 tend to be more consistent, and the detection accuracy of the product wafer 320 is improved.

Fig. 4 is a schematic view of a fourth embodiment of the boat of the present application, and the embodiment shown in fig. 4 is based on the improvement of fig. 1, as shown in fig. 4, a protrusion 135 is disposed on the product bearing portion 133, one end of the protrusion 135 is connected to the upper surface of the product bearing portion 133, the other end extends in a direction away from the product bearing portion 133, and an end surface of one end of the protrusion 135 away from the product bearing portion 133 is a plane.

In order to enable the reaction rate of the product wafer 320 to be increased when the product wafer 320 reacts with the reaction gas on the product bearing portion 133, the protrusion 135 is disposed on the product bearing portion 133, so that the product wafer 320 first contacts with the protrusion 135 when being placed on the product bearing portion 133, the protrusion 135 lifts the product wafer 320 by a certain height, and a gap is formed between the product wafer 320 and the product bearing portion 133, so that when the reaction gas flows into the product bearing portion 133, circulation is formed between the product wafer 320 and the product bearing portion 133, and the fluidity of the reaction gas is effectively increased, so that the product wafer 320 can react with the reaction gas more sufficiently, the rate of generating a polysilicon film on the product wafer 320 is increased, and the thickness difference between the actual deposition layers of the control wafer 310 and the product wafer 320 is reduced, so that the thicknesses of the deposition layers formed by the control wafer 310 and the product wafer 320 tend to be consistent. The problem that the film detection accuracy is affected due to the fact that the thickness of the control wafer film is inconsistent with the actual product because the width and the distance of the bearing part 131 on the wafer boat 100 are the same is effectively solved, and the detection accuracy of the product wafer 320 is further improved.

Fig. 5 is a schematic diagram of a fifth embodiment of the boat of the present application, and the embodiment shown in fig. 5 is a modification based on fig. 4, as shown in fig. 5, a first through hole 136 is disposed in the middle of the protrusion 135, a second through hole 137 is disposed on the product bearing portion 133, and the first through hole 136 is disposed at a position corresponding to the second through hole 137.

Different from the previous embodiment, in the present embodiment, through holes, that is, the first through hole 136 and the second through hole 137, are respectively opened in the middle of the protrusion 135 and the product bearing portion 133, and the positions of the first through hole 136 and the second through hole 137 are corresponding, so that the first through hole 136 and the second through hole 137 form a coaxial overlapping hole, and the space at the lower side of the product bearing portion 133 and the space formed by the protrusion 135 between the product bearing portion 133 and the wafer 300 are opened.

When the reaction gas is introduced into the product bearing part 133, the reaction gas flows in through the second through holes 137 of the product bearing part 133 and flows out from the first through holes 136 of the protrusions 135 to merge with the reaction gas introduced into the space between the product bearing part 133 and the wafer 300, so that the flow rate of the reaction gas can be accelerated, the fluidity of the reaction gas can be effectively increased, the product wafer 320 can more sufficiently react with the reaction gas, the rate of the product wafer 320 to form a polysilicon film can be increased, the product wafer 320 can form more polysilicon films in unit time, and the thickness difference between the actual deposition layers of the control wafer 310 and the product wafer 320 can be reduced, so that the thickness of the deposition layers formed by the control wafer 310 and the product wafer 320 tends to be consistent. The problem that the film detection accuracy is affected due to the fact that the thickness of the control wafer film is inconsistent with the actual product because the width and the distance of the bearing part 131 on the wafer boat 100 are the same is effectively solved, and the detection accuracy of the product wafer 320 is further improved.

Fig. 6 is a schematic diagram of an embodiment of the diffusion apparatus of the present application, and as shown in fig. 6, the present application further discloses a diffusion apparatus 10, which includes a furnace body 200, and the diffusion apparatus 10 further includes: in the boat 100, the boat 100 is disposed in the furnace body 200.

The diffusion apparatus 10 in the present application may be not only a vertical process furnace, but also a horizontal process furnace or other furnace body 200, in which the present embodiment takes a vertical process furnace as an example for illustration, and all the process furnaces mentioned in the present application are vertical process furnaces. The reaction chamber of the vertical process furnace equipment is an inner tube and an outer tube of quartz, and a silicon carbide or other boat 100 with high temperature resistance.

The general structure of the diffusion device 10 in the operating state is shown in fig. 6, in the practical application scenario, the devices are all inserted into the air inlet at the bottom of the furnace body 200 through a single air inlet pipe, air is introduced from the bottom of the furnace body 200, the air flow direction is roughly from the lower part of the furnace body 200 to the upper part of the furnace body 200, from the left part of the furnace body 200 to the right part of the furnace body 200, from the upper right of the furnace body 200 to the lower right of the furnace body 200, and finally is discharged through the air outlet at the lower part of the furnace body 200.

When the wafer carried by the wafer boat is heated in the furnace body in a reaction manner, the wafer boat is driven to rotate through the rotating shaft to uniformly heat, under the condition that the temperature is 350-650 ℃, the used wafer boat is made of quartz materials, in the actual production process, polycrystalline silicon is generated through the thermal decomposition of silane, and is deposited on the surface of the wafer, the surface of the wafer is a flat surface, the product is in a shape with a photoetching groove filler, so that the specific surface area of the product is larger than that of the wafer, and because the polycrystalline silicon film of the product wafer is mainly formed in the photoetching groove, the reaction of the reaction gas in the photoetching groove is slow, if a polycrystalline silicon film conforming to the standard is formed, more time is needed, the photoetching groove reacts with the reaction gas, and the surface of the wafer is a flat surface, and can directly react with the reaction gas, so that the generated polycrystalline silicon film is thicker when the photoetching groove of the product wafer forms the polycrystalline silicon film in a sufficient time, the film formed by the wafer is thicker, and the monitoring data of the wafer is probably about 40-60A thicker than the thickness of the actual deposited layer.

Based on the above problems, the present application improves the diffusion apparatus 10, and particularly improves the boat 100 in the diffusion apparatus 10 as follows:

the present application adjusts the width of the control wafer bearing portion 132 and the distance between the plurality of control wafer bearing portions 132, and the width of the control wafer bearing portion 132 or the distance between the plurality of control wafer bearing portions 132, at least one of the two dimensions being correspondingly smaller than the width of the product bearing portion 133 or the distance between the plurality of product bearing portions 133, when the width of the control wafer bearing portion 132 or the distance between the plurality of control wafer bearing portions 132 is smaller than the product bearing portion 133, the circulation of the reaction gas at the control wafer bearing portion 132 can be effectively reduced, the reaction time between the reaction gas and the control wafer 310 on the control wafer bearing portion 132 can be delayed, the deposition rate of the control wafer 310 is slowed down, the thickness difference between the actual deposition layers of the control wafer 310 and the product wafer 320 can be improved, so that the deposition layer thicknesses formed by the control wafer 310 and the product wafer 320 tend to be consistent. The problem that the film detection accuracy is affected due to the fact that the thickness of the control wafer film is inconsistent with the actual product because the width and the distance of the bearing part 131 on the wafer boat 100 are the same is effectively solved, and the detection accuracy of the product wafer 320 is further improved.

It should be noted that the inventive concept of the present application can form many embodiments, but the present application has a limited space and cannot be listed one by one, so that, on the premise of no conflict, any combination between the above-described embodiments or technical features can form a new embodiment, and after the embodiments or technical features are combined, the original technical effect will be enhanced.

The foregoing is a more detailed description of the present application in connection with specific alternative embodiments, and the specific implementations of the present application are not to be considered limited to these descriptions. For those skilled in the art to which the present application pertains, several simple deductions or substitutions may be made without departing from the concept of the present application, and all should be considered as belonging to the protection scope of the present application.

Claims (10)

1. A wafer boat comprises a plurality of supporting columns, a first supporting plate and a second supporting plate, wherein the supporting columns are arranged between the first supporting plate and the second supporting plate and are connected with the first supporting plate and the second supporting plate; each supporting column is provided with a plurality of bearing parts, the bearing parts on the same horizontal plane on each supporting column bear wafers,

the method is characterized in that the wafer comprises a product wafer and a control wafer; the bearing part comprises a plurality of product bearing parts and a plurality of control wafer bearing parts, the product bearing parts are used for bearing the product wafers, and the control wafer bearing parts are used for bearing the control wafer;

the width of the control wafer bearing part perpendicular to the direction of the supporting column is smaller than the width of the product bearing part perpendicular to the direction of the supporting column, and/or the distance between two adjacent control wafer bearing parts is smaller than the distance between two adjacent product bearing parts.

2. The wafer boat according to claim 1, wherein the width of the product carrier portion perpendicular to the support posts is L1, the width of the wafer carrier portion perpendicular to the support posts is L2, and L1 satisfies the following relation: l1 is more than or equal to 1mm and less than or equal to 1.2mm; l2 satisfies the following relation: l1 is more than or equal to 845 μm and less than or equal to 855 μm.

3. The wafer boat of claim 2, wherein the width of the product carrier perpendicular to the support posts is 1.1 mm, and the width of the wafer carrier perpendicular to the support posts is 850 μm.

4. The wafer boat according to claim 1, wherein a distance between two adjacent ones of the product bearing portions is X1, and a distance between two adjacent ones of the control wafer bearing portions is X2; x1 and X2 are in the relation formula: 2 < X1/X2 < 3.

5. The wafer boat of claim 1, wherein the width of the wafer carrying portions perpendicular to the supporting columns is smaller than the width of the product carrying portions perpendicular to the supporting columns, and the distance between two adjacent wafer carrying portions is equal to the distance between two adjacent product carrying portions.

6. The wafer boat of claim 2, wherein the width of the wafer carrying portions perpendicular to the supporting columns is equal to the width of the product carrying portions perpendicular to the supporting columns, and the distance between two adjacent wafer carrying portions is smaller than the distance between two adjacent product carrying portions.

7. The wafer boat of claim 6, wherein the width of the wafer carrying portions perpendicular to the supporting posts is smaller than the width of the product carrying portions perpendicular to the supporting posts, and the distance between two adjacent wafer carrying portions is smaller than the distance between two adjacent product carrying portions.

8. The wafer boat of claim 1, wherein the product carrier has a protrusion thereon, and an end surface of the protrusion, which is far from an end of the product carrier, is a flat surface.

9. The wafer boat according to claim 8, wherein a first through hole is formed at a central portion of the protrusion, and a second through hole is formed at the product bearing portion, and the first through hole is formed at a position corresponding to the second through hole.

10. A diffusion device comprising a furnace body, characterized in that the diffusion device further comprises: the substrate boat of any of claims 1 to 9, disposed within the furnace body.

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