CN212581528U - Integrated graphite base and electronic-grade polycrystalline silicon production system - Google Patents
Integrated graphite base and electronic-grade polycrystalline silicon production system Download PDFInfo
- Publication number
- CN212581528U CN212581528U CN202020990798.XU CN202020990798U CN212581528U CN 212581528 U CN212581528 U CN 212581528U CN 202020990798 U CN202020990798 U CN 202020990798U CN 212581528 U CN212581528 U CN 212581528U
- Authority
- CN
- China
- Prior art keywords
- graphite
- graphite base
- integrated
- polycrystalline silicon
- clamping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses an integral type graphite base and an electronic grade polycrystalline silicon production system. Wherein, integral type graphite base includes: body, card lamella structure, clearance and electrode configuration hole. The clamping petal structure is arranged at the upper part of the body and is of an integrated structure with the body; the clamping petal structure comprises a plurality of sub-clamping petals, and gaps are formed among the sub-clamping petals; the electrode configuration hole is arranged at the lower part of the body. The clamping flap structure and the graphite base body are of an integrated structure, so that the problem of graphite dust pollution generated during assembly of accessories of the split graphite base is avoided, and the problem of quality reduction of an electronic grade polycrystalline silicon product caused by introduction of graphite dust is avoided. Meanwhile, the requirement on the purity of the electronic grade polycrystalline silicon is extremely high, so that the recycling efficiency of the split graphite structure is required to be less than two times, the split graphite substrate has various processing procedures, and the integrated graphite base has obvious economic advantages through comprehensive analysis; in addition, the integrated graphite base also has excellent structural stability.
Description
Technical Field
The utility model relates to a polycrystalline silicon production technical field, particularly, the utility model relates to an integral type graphite base and electronic grade polycrystalline silicon production system.
Background
Polycrystalline silicon is a 'base stone' in the microelectronic industry and the photovoltaic industry, is the most basic raw material in the information industry and the new energy industry, is also a direct raw material for producing monocrystalline silicon, and is an electronic information base material of semiconductor devices such as modern artificial intelligence, automatic control, information processing, photoelectric conversion and the like. With the rapid development of new energy and photovoltaic industry, the polysilicon industry is growing at a high speed. The electronic grade polysilicon is used as a strategic raw material and is the foremost end of basic materials of semiconductor devices of integrated circuits.
However, electronic grade polysilicon production has long been focused on a few polysilicon enterprises in the U.S., germany and japan, where Hemlock in the U.S. produces about 11000 tons, Wacker in germany about 8000 tons, Tokuyama in japan about 5500 tons, sumitomo in japan about 2500 tons, mitsubishi in japan about 2000 tons, and REC about 844 tons. In 2018, the strength of supporting the development of the integrated circuit industry is increased in China, the demand of the electronic-grade polycrystalline silicon is further increased, the national high-level engineering and the investment fund of the integrated circuit industry support domestic manufacturers to devote on the localization research and industrialization of the electronic-grade polycrystalline silicon, and the localization supply of the electronic-grade polycrystalline silicon is gradually realized.
The purity requirement of electronic grade polysilicon products is extremely strict, at present, the electronic grade polysilicon is produced by adopting an improved Siemens method in China, a high-purity environment with strict requirement is adopted in the production process, and accessories with high purity and small specific area are used as far as possible in growth equipment so as to reduce the introduction of pollutants. The graphite base is used as a necessary connecting element between the bearing silicon core and the electrode, and is also one of approaches for introducing impurity carbon in the electronic grade polysilicon. The graphite base at present is mainly formed by combining 3 accessories: graphite card lamella, graphite cap, graphite base, during the use, pack graphite card lamella into graphite cap, then equipment graphite base and graphite cap, push up graphite card lamella tightly, graphite base and graphite cap pass through threaded connection. This structure has the following problems: 1. graphite dust is easily hidden in gaps among the fittings during threaded connection, so that electronic-grade polycrystalline silicon is polluted; 2. the specific surface area is large, and III group or V group impurities of the graphite piece volatilize to the silicon rod in the growth process of the polycrystalline silicon, so that the purity of the silicon rod is reduced; 3. water stains and other substances are easy to remain after treatment; 4. the strength and stability are not good enough. Therefore, it is very important to improve the structure of the graphite base.
SUMMERY OF THE UTILITY MODEL
The present invention aims at solving at least one of the technical problems in the related art to a certain extent. Therefore, the utility model aims to provide an integral type graphite pedestal and electronic grade polycrystalline silicon production system. The integrated graphite base is formed by integrating the clamping flap and the base body, so that the problems of low quality of electronic grade polycrystalline silicon products and poor stability and strength of the base, which are easily caused by the conventional graphite base, can be solved.
In one aspect of the present invention, the utility model provides an integral type graphite base. According to the utility model discloses an embodiment, this integral type graphite base includes: a body; the clamping petal structure is arranged on the upper part of the body and is of an integrated structure with the body; the clamping petal structure comprises a plurality of sub-clamping petals, and gaps are formed among the sub-clamping petals; and the electrode configuration hole is arranged at the lower part of the body.
According to the utility model discloses integral type graphite base, its graphite card lamella structure and graphite base body formula structure as an organic whole, the graphite dust pollution problem that produces when having avoided each accessory equipment of components of a whole that can function independently graphite base can not lead to the electron level polycrystalline silicon product decline problem that causes because of introducing the graphite dust. Meanwhile, the requirement on the purity of the electronic grade polycrystalline silicon is extremely high, so that the requirement on the recycling efficiency of the split graphite structure is less than two times, the split graphite substrate has various processing procedures, the graphite requirement is large, and the integrated graphite base has obvious economic advantages through comprehensive analysis; in addition, the integrated graphite base also has excellent structural stability.
Optionally, the plurality of subcard lobes are equally spaced.
Optionally, the daughter card petals include 4.
Optionally, the width of the gap is 0.5-1.5 mm.
Optionally, the depth of the gap is 30-55 mm.
Optionally, the inner diameter of the electrode configuration hole is 30-65 mm.
Optionally, the depth of the electrode configuration hole is 30-35 mm.
In another aspect of the present invention, the present invention provides an electronic grade polysilicon production system. According to the embodiment of the utility model, this electronic grade polycrystalline silicon production system includes: the integrated graphite susceptor of the above embodiment. The electronic grade polycrystalline silicon production system has better stability and reliability by adopting the integrated graphite base of the embodiment, and can produce electronic grade polycrystalline silicon products with better quality.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic cross-sectional view of a longitudinal section of an integrated graphite susceptor according to an embodiment of the present invention;
fig. 2 is a top view of an integrated graphite base according to an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present invention, and should not be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly, e.g., as meaning permanently connected, detachably connected, or integral to one another; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the present application, unless expressly stated or limited otherwise, the first feature may be directly on or directly under the second feature or indirectly via intermediate members. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
The inventor finds that in the research of producing the graphite base for electronic grade polysilicon, the current graphite base is mainly composed of 3 parts: graphite card lamella, graphite cap, graphite base, during the use, pack graphite card lamella into graphite cap, then equipment graphite base and graphite cap, push up graphite card lamella tightly, graphite base and graphite cap pass through threaded connection. This structure has the following problems: 1. graphite dust is easily hidden in gaps among the fittings during threaded connection, so that electronic-grade polycrystalline silicon is polluted; 2. the specific surface area is large, and III group or V group impurities of the graphite piece volatilize to the silicon rod in the growth process of the polycrystalline silicon, so that the purity of the silicon rod is reduced; 3. water stains and other substances are easy to remain after treatment; 4. the strength and stability are not good enough. Therefore, it is very important to improve the structure of the graphite base.
In view of this, in an aspect of the present invention, the utility model provides an integral type graphite base. According to the embodiment of the utility model, referring to fig. 1 and 2, this integral type graphite base includes: body 1, card lamella structure 2, clearance 3 and electrode configuration hole 4. The clamping valve structure 2 is arranged at the upper part of the body 1 and is of an integrated structure with the body 1; the card petal structure 2 comprises a plurality of sub card petals, and gaps 3 are formed among the sub card petals; an electrode arrangement hole 4 is provided in the lower portion of the body 1.
According to the utility model discloses integral type graphite base, its graphite card lamella structure and graphite base body formula structure as an organic whole, the graphite dust pollution problem that produces when having avoided each accessory equipment of components of a whole that can function independently graphite base can not lead to the electron level polycrystalline silicon product decline problem that causes because of introducing the graphite dust. Meanwhile, the requirement on the purity of the electronic grade polycrystalline silicon is extremely high, so that the requirement on the recycling efficiency of the split graphite structure is less than two times, the split graphite substrate has various processing procedures, the graphite requirement is large, and the integrated graphite base has obvious economic advantages through comprehensive analysis; in addition, the integrated graphite base also has excellent structural stability.
The integrated graphite base according to the embodiment of the present invention is further described in detail below.
According to some embodiments of the present invention, the plurality of sub-locking flaps are distributed at equal intervals. Therefore, the stability of the whole structure of the graphite base can be further improved.
The specific number of the plurality of sub-card lobes is not particularly limited, and those skilled in the art can select the sub-card lobes according to actual needs. According to some embodiments of the present invention, referring to fig. 2, the sub-card lobes include 4 sub-card lobes (i.e., sub-card lobe 2a, sub-card lobe 2b, sub-card lobe 2c, and sub-card lobe 2 d). Therefore, the stability of the whole structure of the graphite base can be further improved.
According to some embodiments of the utility model, it is fixed to insert graphite base bottom electrode configuration hole 4 electrode during the use, later insert the silicon core into the clearance 3 that graphite base upper portion's sub-calorie lamella 2a, sub-card lamella 2b, sub-card lamella 2c, sub-card lamella 2d enclose and fix, can carry out next process.
According to some embodiments of the present invention, the width of the gap 3 may be 0.5-1.5 mm, such as 0.5mm, 0.75mm, 1.0mm, 1.25mm, 1.5mm, etc. Therefore, the fixing effect of the plurality of sub-clamping petals on the silicon chip can be further improved,
according to some embodiments of the present invention, the depth of the gap 3 may be 30-55 mm, for example, 30mm, 35mm, 40mm, 45mm, 50mm, 55mm, etc. Therefore, the fixing effect of the plurality of sub-clamping petals on the silicon chip can be further improved,
according to some embodiments of the present invention, the inner diameter of the electrode configuration hole 4 may be 30-65 mm, such as 30mm, 35mm, 40mm, 45mm, 50mm, 55mm, 60mm, 65mm, etc. This can further improve the effect of fixing the graphite susceptor to the electrode.
According to some embodiments of the present invention, the depth of the electrode configuration hole 4 may be 30-35 mm. This can further improve the effect of fixing the graphite susceptor to the electrode.
In another aspect of the present invention, the present invention provides an electronic grade polysilicon production system. According to the embodiment of the utility model, this electronic grade polycrystalline silicon production system includes: the integrated graphite susceptor of the above embodiment. The electronic grade polycrystalline silicon production system has better stability and reliability by adopting the integrated graphite base of the embodiment, and can produce electronic grade polycrystalline silicon products with better quality.
In addition, it should be noted that the electronic grade polysilicon production system has all the features and advantages described above for the integrated graphite base, and thus, the description thereof is omitted.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art without departing from the scope of the present invention.
Claims (8)
1. An integrated graphite susceptor, comprising:
a body;
the clamping petal structure is arranged on the upper part of the body and is of an integrated structure with the body; the clamping petal structure comprises a plurality of sub-clamping petals, and gaps are formed among the sub-clamping petals;
and the electrode configuration hole is arranged at the lower part of the body.
2. The one-piece graphite susceptor of claim 1, wherein the plurality of subcard lobes are equally spaced.
3. The one-piece graphite susceptor of claim 1, wherein the sub-clamping lobes comprise 4.
4. The integrated graphite susceptor of claim 1, wherein the gap has a width of 0.5 to 1.5 mm.
5. The integrated graphite susceptor of claim 1, wherein the gap has a depth of 30 to 55 mm.
6. The integrated graphite susceptor of claim 1, wherein the electrode arrangement holes have an inner diameter of 30 to 65 mm.
7. The integrated graphite susceptor of claim 1, wherein the electrode arrangement holes have a depth of 30 to 55 mm.
8. An electronic grade polysilicon production system, comprising: the one-piece graphite susceptor of any one of claims 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020990798.XU CN212581528U (en) | 2020-06-03 | 2020-06-03 | Integrated graphite base and electronic-grade polycrystalline silicon production system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020990798.XU CN212581528U (en) | 2020-06-03 | 2020-06-03 | Integrated graphite base and electronic-grade polycrystalline silicon production system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212581528U true CN212581528U (en) | 2021-02-23 |
Family
ID=74643603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020990798.XU Active CN212581528U (en) | 2020-06-03 | 2020-06-03 | Integrated graphite base and electronic-grade polycrystalline silicon production system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212581528U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111646475A (en) * | 2020-06-03 | 2020-09-11 | 洛阳中硅高科技有限公司 | Integrated graphite base and electronic-grade polycrystalline silicon production system |
-
2020
- 2020-06-03 CN CN202020990798.XU patent/CN212581528U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111646475A (en) * | 2020-06-03 | 2020-09-11 | 洛阳中硅高科技有限公司 | Integrated graphite base and electronic-grade polycrystalline silicon production system |
| CN111646475B (en) * | 2020-06-03 | 2024-06-11 | 洛阳中硅高科技有限公司 | Integrated graphite base and electronic grade polysilicon production system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102119444B (en) | Germanium-enriched silicon material for making solar cells | |
| US7955433B2 (en) | Method and system for forming a silicon ingot using a low-grade silicon feedstock | |
| CN210974929U (en) | Crucible for growing silicon carbide crystal and silicon carbide crystal growing apparatus | |
| CN101597793B (en) | Crucible for growing polysilicon ingot | |
| US9637391B2 (en) | Crystalline silicon ingot including nucleation promotion layer | |
| CN212581528U (en) | Integrated graphite base and electronic-grade polycrystalline silicon production system | |
| JP3181884U (en) | Crystalline silicon ingot and silicon wafer produced therefrom | |
| CN103774209B (en) | Silicon crucible for casting ingots and coating production thereof | |
| CN113120909B (en) | Preparation method of high-purity semi-insulating silicon carbide powder | |
| CN102574691A (en) | Core wire holder for producing polycrystalline silicon and method for producing polycrystalline silicon | |
| CN106435722B (en) | The manufacturing method and manufacturing device of silicon carbide epitaxy chip | |
| CN108315813A (en) | A kind of preparation method of polycrystalline silicon ingot casting | |
| US10825940B2 (en) | Polycrystalline silicon column and polycrystalline silicon wafer | |
| CN111646475A (en) | Integrated graphite base and electronic-grade polycrystalline silicon production system | |
| CN215856464U (en) | Novel furnace chassis structure | |
| CN204874813U (en) | A thermal shielding device for monocrystalline silicon is grown | |
| CN213519899U (en) | Novel integral type chute silicon boat | |
| CN103730188B (en) | A kind of preparation method of monocrystaline silicon solar cell front electrode silver slurry | |
| CN110517988A (en) | A kind of igbt chip and its processing technology and process equipment with compound grid structure | |
| CN212676229U (en) | Graphite boat suitable for photovoltaic super large silicon chip | |
| CN103422166A (en) | Quartz crucible for ingotting polycrystalline silicon solar cell, and spraying method thereof | |
| JP2003252617A (en) | Polycrystal silicon substrate and production method for solar cell | |
| US10087080B2 (en) | Methods of fabricating a poly-crystalline silcon ingot from a nucleation promotion layer comprised of chips and chunks of silicon-containing particles | |
| CN219239833U (en) | Ending shaping plate for ingot single crystal | |
| CN214203638U (en) | Film coating carrier plate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |