CN213401121U - Silicon boat for CVD process - Google Patents
Silicon boat for CVD process Download PDFInfo
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- CN213401121U CN213401121U CN202022005370.8U CN202022005370U CN213401121U CN 213401121 U CN213401121 U CN 213401121U CN 202022005370 U CN202022005370 U CN 202022005370U CN 213401121 U CN213401121 U CN 213401121U
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Abstract
The utility model discloses an overcome that traditional silicon boat can't be applied to the CVD technology, and the chemical cleaning liquid causes structural damage's technical problem to the silicon boat easily, provide a silicon boat for CVD technology, including day board, flange and ditch stick, be equipped with the ditch tooth on the ditch stick, the one end of day board is equipped with first butt fusion groove, the one end that the flange is close to day board is equipped with second butt fusion groove, the one end of ditch stick is equipped with the first butt fusion head that matches with first butt fusion groove, the other end of ditch stick is equipped with the second butt fusion head that matches with second butt fusion groove, first butt fusion head and first butt fusion groove pass through the hot melt and connect fixedly continuous, second butt fusion head and second butt fusion groove pass through the hot melt and connect fixedly continuous, the silicon boat surface is equipped with the oxide film. The silicon boat can be applied to a CVD (chemical vapor deposition) process, an oxide film on the surface of the silicon boat carries out chemical corrosion resistance protection on the silicon boat, chemical cleaning liquid in the cleaning operation cannot cause structural damage to the silicon boat, and the silicon boat can be recycled.
Description
Technical Field
The utility model relates to a semiconductor silicon material makes technical field, especially relates to a silicon boat for CVD technology.
Background
CVD process, i.e. chemical vapor deposition, is an important and common process in the processing of silicon wafers, and is mainly used to complete the deposition of solid films, such as poly-Si and SiO on the surface of silicon wafers by means of vapor phase chemical reactions2) And silicon nitride (Si)3N4) And the like. In the process of film deposition, silicon wafers are carried by a wafer boat and enter a deposition furnace for silicon wafer treatment.
Because the wafer boat can generate self film deposition along with the film deposition on the surface of the silicon wafer in the use process, when the self film deposition reaches a certain thickness, the film can generate fine cracking due to the internal stress of the film, and the film desorption phenomenon is generated. The desorbed tiny film particles can be mixed with reaction gas and deposited on the silicon wafer to cause the failure of a circuit or a device; therefore, the wafer boat for the CVD process needs to be cleaned after being used for a certain time, and can be used again after the surface deposition layer is removed.
The silicon carbide boat can be corroded by high-concentration acid liquor due to good acid and alkali resistance, so that the surface deposition layer is only needed to be corroded by mixed acid, and the deposition layer is simpler to treat. However, since silicon carbide boats are expensive and their supply is monopolized abroad, the supply of domestic silicon carbide boats has a great gap, and thus a good substitute for silicon carbide boats is urgently needed. Silicon boats have higher material purity and a thermal expansion coefficient closer to that of silicon wafers than silicon carbide boats, and therefore silicon boats have been used more and more widely in silicon wafer processing in recent years, particularly in high-temperature processing processes such as oxidation, annealing and the like.
Chinese patent with application number CN201721825746.1 and publication date of 2018, 11 and 23 discloses a silicon boat for supporting and insulating silicon wafers in the heat treatment process, which is characterized in that: the silicon boat comprises a flange and an upper plate which are arranged in parallel and correspond to each other, a plurality of silicon tooth rods used for supporting the silicon wafers are arranged between the flange and the upper plate, a plurality of equidistant and mutually parallel groove teeth are arranged on the inner sides of the silicon tooth rods, and the silicon wafers are inserted into and placed on the groove teeth; the cross section of the silicon toothed bar is triangular, the top end of the triangle faces the inner side, and the bottom edge of the triangle faces the outer side; the silicon tooth bars are three in number and comprise two front groove bars and a rear groove bar, groove teeth on the front groove bars and the rear groove bar are arranged at the top ends of the triangles on the inner sides of the silicon tooth bars, corresponding groove teeth on the three silicon tooth bars form silicon wafer accommodating grooves on the same plane, the tooth bottom space corresponding to the groove teeth on the two front groove bars is larger than the width of the silicon wafer, the tooth top space corresponding to the groove teeth on the two front groove bars is smaller than the width of the silicon wafer, and the silicon wafer is inserted into the corresponding silicon wafer accommodating grooves and is placed on the groove teeth.
The patent provides a silicon boat which is reliable in support and good in heat insulation effect, and has the problems that due to the gaps among a groove rod, a top plate and a flange, when a deposited film on the surface of the silicon boat is cleaned, the deposited film in the gaps is difficult to be completely removed, and when the film in the gaps which are not cleaned is subjected to a film desorption phenomenon, although the silicon boat is not large in size, the silicon boat still can cause the failure of a circuit or a device due to the extremely high requirement of silicon wafer processing on precision; in addition, when the above patent is directly applied to the CVD process, the silicon boat is not protected, and the chemical cleaning solution during the cleaning operation may cause structural damage to the silicon boat.
Disclosure of Invention
The utility model discloses an overcome that traditional silicon boat can't be applied to the CVD technology to and chemical cleaning liquid causes structural damage's technical problem to the silicon boat easily, provide a silicon boat for the CVD technology, the silicon boat can be used in the CVD technology, and the oxide film on silicon boat surface carries out anti chemical corrosion protection to the silicon boat, and chemical cleaning liquid when cleaning operation can not cause structural damage to the silicon boat, and the silicon boat can recycle.
In order to achieve the above purpose, the present invention adopts the following technical solution.
The utility model provides a silicon boat for CVD technology, including day board, flange and ditch stick, be equipped with the ditch tooth on the ditch stick, the one end of day board is equipped with first butt fusion groove, the one end that the flange is close to day board is equipped with second butt fusion groove, the one end of ditch stick is equipped with the first butt fusion head that matches with first butt fusion groove, the other end of ditch stick is equipped with the second butt fusion head that matches with second butt fusion groove, first butt fusion head and first butt fusion groove pass through the hot melt and connect fixedly and link to each other, second butt fusion head and second butt fusion groove pass through the hot melt and connect fixedly and link to each other, silicon boat surface is equipped with the oxide film.
Ditch stick and sky board, flange are connected through the fastener realization mostly in traditional silicon boat to realize easy dismounting's technological effect, but be applied to the silicon boat of CVD technology, for the too big film desorption phenomenon that produces of the deposit film thickness of avoiding silicon boat surface, and then cause this technical problem of inefficacy of circuit or device, silicon boat is after using the certain time for the CVD technology, must carry out cleaning treatment, just can put into use once more after waiting to get rid of the surface deposition layer. The problem is that the gap exists in the connecting position of the groove rod, the top plate and the flange of the traditional fastener assembly type silicon boat, the gap is narrow, the deposited layer in the gap is difficult to be completely cleaned when the silicon boat is cleaned, and when the film in the gap is not cleaned completely and the film desorption phenomenon occurs, although the quantity is not large, the circuit or device can still be caused to lose efficacy due to the extremely high requirement on the precision of silicon wafer processing. The application provides a silicon boat for a CVD (chemical vapor deposition) process, a ditch rod, a top plate and a flange are fixed through thermal welding, welding materials are filled in the connecting positions of a first welding head, a first welding groove, a second welding head and a second welding groove, and no gap exists in the connecting positions of the ditch rod, the top plate and the flange after the silicon boat is assembled, so that deposited layers on the silicon boat can be completely removed during cleaning operation, and further the film desorption phenomenon is effectively avoided; further, silicon boat surface is equipped with the oxide film in this application, and the oxide film plays anti chemical corrosion guard action to the silicon boat base member when wasing the silicon boat, and the chemical cleaning liquid when the cleaning operation can not cause structural damage to the silicon boat, so the silicon boat can recycle.
Preferably, the ditch stick includes the body, and the number of ditch tooth is a plurality of and along body length direction interval arrangement, and the cross-section of ditch tooth is the rectangle, and the end rounding that the body was kept away from to the ditch tooth. The cross-section of ditch tooth is the rectangle, and its one side is connected with ditch stick body, and two most advanced of opposite side have the fillet, and the ditch tooth sectional area of short tooth structure is less in this application, and this kind of structure can reduce the effective area of ditch tooth and ditch stick, and when the film deposition was to certain thickness, the probability that the film granule that reduces to peel off led to the fact the pollution to the silicon chip.
Preferably, the trench bars comprise a first front trench bar, a second front trench bar and a rear trench bar, trench teeth on the first front trench bar, the second front trench bar and the rear trench bar face inwards, and trench teeth at the same height on the first front trench bar, the second front trench bar and the rear trench bar are matched to bear the same silicon wafer. The groove teeth under the same height plane form a silicon wafer accommodating groove with a large opening on one side and a small opening on the other two sides for bearing the silicon wafer, and the silicon wafer inserting and taking operation is high in convenience.
Preferably, the top plate and the flange are parallel annular silicon plates, the top plate is provided with a flat cut notch along the chord length direction of the top plate, and the rear groove rod is perpendicular to the flat cut notch space.
Preferably, the body is provided with a first gap section and a second gap section, the first gap section is positioned between the groove tooth and the first welding head, the second gap section is positioned between the groove tooth and the second welding head, and the length of the first gap section is smaller than that of the second gap section. When the silicon boat is vertically placed, the flange is arranged below, the top plate is arranged above, in order to ensure that the stability of the silicon boat is good, the silicon wafer is inserted from bottom to top, in the application, the second gap section is close to the flange, the longer second gap section ensures sufficient dispersion of air flow while realizing convenient insertion of the silicon wafer, the first gap end can also be designed to be larger, but the number of groove teeth on the groove rods with the same length is reduced, and the bearing capacity of the silicon boat is reduced; for the bearing capacity who promotes the silicon boat, this application reduces first clearance section, and it is inconvenient to insert for avoiding leading to being close to the silicon chip of day board because of first clearance section undersize simultaneously, and this application sets up the truncation breach on the day board, and silicon chip part protrusion day board to guarantee inserting fast of silicon chip and get.
Preferably, the preparation material of the silicon boat is high-purity polysilicon. The high-purity polysilicon is similar to silicon wafers in the aspects of hardness, thermal expansion coefficient, purity and the like, can effectively avoid exogenous pollution, and can effectively reduce the contact damage of silicon wafer materials.
Preferably, the surface roughness of the silicon boat is 2um or more. The rough surface of the silicon boat can increase the adsorption strength of the deposited film, reduce the internal stress of the film and reduce the probability of particle pollution caused by film cracking.
Preferably, the welding materials for hot welding and fixing are high-temperature-resistant glue and quartz powder, and the high-temperature-resistant glue is clean glue for special semiconductor grades. The high temperature welded mode is for accomplishing 10 hours's welding process under 1100 ℃ through special high temperature resistant glue and quartz powder in this application, and high temperature resistant glue can bear the high temperature more than 1000 ℃ and do not take place serious decomposition for special semiconductor grade uses clean glue to the stability of butt fusion structure has been guaranteed.
Preferably, the particle size of the quartz powder is 1200 meshes. The quartz powder with the mesh number has larger specific surface area, and can be more fully combined with glue, thereby increasing the welding strength.
Preferably, the oxide film has a thickness of not less than
The thickness limitation of the oxide film can ensure that the surface of the silicon boat has enough corrosion resistance when the chemical treatment is carried out for a long time.
To sum up, the utility model discloses following beneficial effect has: (1) the silicon boat can be applied to a CVD process; (2) the oxidation film on the surface of the silicon boat carries out chemical corrosion resistance protection on the silicon boat, chemical cleaning liquid in the cleaning operation can not cause structural damage to the silicon boat, and the silicon boat can be recycled; (3) the silicon boat with the rough surface can increase the adsorption strength of the deposited film, reduce the internal stress of the film and reduce the probability of particle pollution caused by film cracking; (4) the silicon chip inserting and taking device reduces the first gap, and meanwhile, in order to avoid inconvenience in inserting and taking of the silicon chip close to the top plate due to the fact that the first gap is too small, a flat cutting notch is formed in the top plate, and the silicon chip partially protrudes out of the top plate, so that rapid inserting and taking of the silicon chip is guaranteed; (5) the ditch tooth sectional area of short tooth structure is less in this application, and this kind of structure can reduce the effective area of ditch tooth and ditch stick, when the film deposits certain thickness, reduces the film granule of peeling off and causes the probability of polluting the silicon chip.
Drawings
Fig. 1 is a schematic view of the whole of the present invention.
Fig. 2 is a schematic view of the middle channel rod of the present invention.
Fig. 3 is another schematic view of the inventive bar.
Fig. 4 is a schematic view of the middle ceiling of the present invention.
Fig. 5 is a schematic view of a flange according to the present invention.
Fig. 6 is a schematic view of the welding position in the present invention.
FIG. 7 is a schematic diagram of the structure of the silicon boat of the present invention after CVD deposition.
In the figure:
the structure comprises a top plate 1, a flange 2, a groove rod 3, a first front groove rod 3.1, a second front groove rod 3.2, a rear groove rod 3.3, groove teeth 4, a first welding groove 5, a second welding groove 6, a first welding head 7, a second welding head 8, an oxide film 9, a body 10, a first gap section 10.1, a second gap section 10.2, a flat cutting gap 11, a welding material 12, a polycrystalline silicon film 13 and a silicon boat substrate 14.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships illustrated in the drawings, and are used merely for convenience of description and for simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1:
as shown in fig. 1 to 7, a silicon boat for CVD process comprises a top plate 1, a flange 2 and a groove rod 3, wherein the groove rod is provided with groove teeth 4, one end of the top plate is provided with a first welding groove 5, one end of the flange close to the top plate is provided with a second welding groove 6, one end of the groove rod is provided with a first welding head 7 matched with the first welding groove, the other end of the groove rod is provided with a second welding head 8 matched with the second welding groove, the first welding head and the first welding groove are fixedly connected through thermal welding, the second welding head and the second welding groove are fixedly connected through thermal welding, and the surface of the silicon boat is provided with an oxide film 9; the groove rod comprises a body 10, a plurality of groove teeth are arranged at intervals along the length direction of the body, the cross sections of the groove teeth are rectangular, and the end parts of the groove teeth, far away from the body, are rounded; the groove bars comprise a first front groove bar 3.1, a second front groove bar 3.2 and a rear groove bar 3.3, groove teeth on the first front groove bar, the second front groove bar and the rear groove bar face towards the inner side, and groove teeth at the same height on the first front groove bar, the second front groove bar and the rear groove bar are matched to bear the same silicon wafer; the top plate and the flange are parallel annular silicon plates, a flat cut gap 11 along the chord length direction of the top plate is arranged on the top plate, and the rear groove rod is perpendicular to the flat cut gap space; the body is provided with a first gap section 10.1 and a second gap section 10.2, the first gap section is positioned between the groove tooth and the first welding head, the second gap section is positioned between the groove tooth and the second welding head, and the length of the first gap section is smaller than that of the second gap section; the preparation material of the silicon boat is high-purity polysilicon; the surface roughness of the silicon boat is more than or equal to 2 um; the welding materials for hot welding and fixing are high-temperature-resistant glue and quartz powder, and the high-temperature-resistant glue is clean glue for special semiconductor grades; the granularity of the quartz powder is 1200 meshes; the thickness of the oxide film is more than or equal to
As shown in fig. 1 to 5, in this embodiment, a silicon boat for CVD process includes, from top to bottom, a top plate, three groove rods and a flange, wherein the top plate and the flange are parallel to each other, three first welding grooves are formed in a lower end surface of the top plate, three second welding grooves are formed in an upper end surface of the flange, the three groove rods are all three, the three groove rods have the same structure, a first welding head matched with the first welding groove is arranged at an upper end of the groove rod, a second welding head matched with the second welding groove is arranged at a lower end of the groove rod, the first welding head is embedded in the first welding groove, the second welding head is embedded in the second welding groove, and the three groove rods are parallel to and perpendicular to the top plate and the flange after the groove rod is embedded. The groove rods are provided with a certain number of groove teeth, and the groove teeth with the same height on the three groove rods are matched to form a plane for bearing the silicon wafer. And (3) matching the assembled silicon boat, sequentially injecting welding materials 9 into welding grooves of the flange and the top plate, performing high-temperature welding as shown in fig. 6, performing steam oxidation on the welded silicon boat in a wet oxidation furnace to grow an oxide film, and finishing preparation of the silicon boat after the oxide film grows.
In the embodiment, the silicon boat and the parts are all prepared by using high-purity polycrystalline silicon materials, and the materials are similar to the wafers in the aspects of hardness, thermal expansion coefficient, purity and the like, so that exogenous pollution can be effectively avoided, and the contact damage of the wafer materials can be reduced. The groove teeth are arranged on the inner side of the groove rod, in the embodiment, the groove teeth are horizontal sheets parallel to the top plate and the flange, and the thickness of the groove teeth is preferably 2 mm; the groove tooth sheet is formed by cutting the groove rod, and the shape of the groove tooth sheet is consistent with the projection shape of the groove rod, so that the groove tooth is a rectangle with two tips at one side provided with round corners; in the embodiment, the width of the groove tooth sheet is preferably 4mm, so that the contact area between the groove tooth and the wafer can be effectively reduced, and the risk of particle pollution is reduced.
The structure of the deposited layer on the surface of the used silicon boat is shown in fig. 7, an oxide layer 9 grown by wet oxidation is arranged on a silicon boat substrate 14, a polysilicon film 13 deposited by chemical vapor in a furnace body is arranged on the oxide layer, and the film can generate particle stripping when reaching the thickness of 200um, so that the cleanliness of the wafer is influenced, therefore, the silicon boat needs to be repaired and cleaned, and the deposited layer on the surface of the polysilicon is removed.
Example 2:
as shown in fig. 1 to 5, the trench teeth are arranged at equal intervals along the length direction of the trench rod, after the trench rod, the top layer trench teeth and the top plate and the flange are assembled, the distance between the top layer trench teeth and the top plate, namely the first gap section 10.1, is extremely small, in this embodiment, the first gap section is slightly larger than the distance between the two trench teeth, the distance between the bottom layer trench teeth and the flange, namely the second gap section 10.2, is larger, the flange is of a complete annular structure, the top plate is of an annular plate-shaped structure, and is provided with a flat cut notch along the chord length direction, the trench rod comprises two front trench rods and one rear trench rod, the trench teeth on the three trench rods are all inward along the radial direction of the flange, and the chord length direction of an arc line formed by the trench teeth at the same position is. The reason for the above structural design is that in order to ensure that the silicon boat has good stability, the silicon wafer insertion is performed from bottom to top, the second gap section is larger so as to ensure the free insertion of the silicon wafer, and the first gap section can also be similarly designed to be larger, but the structural design can cause the number of the groove teeth on the lower groove rod with the same length to be reduced, and the number of the silicon wafers which can be carried by the silicon boat to be reduced. First clearance section is minimum in this embodiment, and this design can promote the upper limit that bears of silicon chip under the unchangeable circumstances of ditch stick length, and the truncation breach on the day board can avoid the day board to cause to be blockked the silicon chip cartridge that is close to the day board on the one hand, and on the other hand guarantees that the silicon chip cartridge is along the radial protrusion of day board, and efficiency is higher when top-down extracts the silicon chip like this, can not take place to be less than the inconvenient phenomenon of extraction that the day board size leads to because of the silicon chip size.
Claims (8)
1. The utility model provides a silicon boat for CVD technology, including day board, flange and ditch stick, be equipped with the ditch tooth on the ditch stick, a serial communication port, the one end of day board is equipped with first butt fusion groove, the one end that the flange is close to day board is equipped with second butt fusion groove, the one end of ditch stick is equipped with the first butt fusion head that matches with first butt fusion groove, the other end of ditch stick is equipped with the second butt fusion head that matches with second butt fusion groove, first butt fusion head and first butt fusion groove pass through the hot melt and connect fixedly continuous, second butt fusion head and second butt fusion groove pass through the hot melt and connect fixedly continuous, silicon boat surface is equipped with the oxide film.
2. The silicon boat as set forth in claim 1, wherein the groove bars comprise a body, the number of the groove teeth is several and the groove teeth are arranged at intervals along the length direction of the body, the cross section of the groove teeth is rectangular, and the end portions of the groove teeth away from the body are rounded.
3. The silicon boat of claim 1, wherein the trench rods comprise a first front trench rod, a second front trench rod and a rear trench rod, the trench teeth of the first front trench rod, the second front trench rod and the rear trench rod face inward, and the trench teeth of the first front trench rod, the second front trench rod and the rear trench rod at the same height are matched to support the same silicon wafer.
4. The silicon boat of claim 3, wherein the top plate and the flange are parallel annular silicon plates, the top plate has a flat cut along a chord length thereof, and the rear channel bar is perpendicular to the flat cut space.
5. The silicon boat for CVD process of claim 2, wherein the body has a first gap section and a second gap section, the first gap section is located between the gullet teeth and the first fusion head, the second gap section is located between the gullet teeth and the second fusion head, and the length of the first gap section is smaller than the length of the second gap section.
6. The silicon boat for CVD process according to claim 1, 2 or 3, wherein the material for preparing the silicon boat is high purity polysilicon.
7. The silicon boat for CVD process according to claim 1, 2 or 3, wherein the surface roughness of the silicon boat is 2 μm or more.
8. The silicon boat of claim 1, wherein the oxide film has a thickness of 6000A or more.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202022005370.8U CN213401121U (en) | 2020-09-14 | 2020-09-14 | Silicon boat for CVD process |
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| CN202022005370.8U CN213401121U (en) | 2020-09-14 | 2020-09-14 | Silicon boat for CVD process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7364275B1 (en) | 2022-06-07 | 2023-10-18 | 株式会社フェローテックホールディングス | wafer boat |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7364275B1 (en) | 2022-06-07 | 2023-10-18 | 株式会社フェローテックホールディングス | wafer boat |
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