CN113665233B - HJT battery silk screen and printing method thereof - Google Patents
HJT battery silk screen and printing method thereof Download PDFInfo
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- CN113665233B CN113665233B CN202111238278.9A CN202111238278A CN113665233B CN 113665233 B CN113665233 B CN 113665233B CN 202111238278 A CN202111238278 A CN 202111238278A CN 113665233 B CN113665233 B CN 113665233B
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000007639 printing Methods 0.000 title claims abstract description 12
- 238000003466 welding Methods 0.000 claims abstract description 109
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 238000012360 testing method Methods 0.000 claims abstract description 8
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims abstract description 6
- 150000002500 ions Chemical class 0.000 claims abstract description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000008439 repair process Effects 0.000 abstract description 22
- 229910000679 solder Inorganic materials 0.000 abstract description 18
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 abstract description 3
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 abstract description 3
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005476 soldering Methods 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 230000009286 beneficial effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41F—PRINTING MACHINES OR PRESSES
- B41F15/00—Screen printers
- B41F15/14—Details
- B41F15/34—Screens, Frames; Holders therefor
- B41F15/36—Screens, Frames; Holders therefor flat
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M1/00—Inking and printing with a printer's forme
- B41M1/12—Stencil printing; Silk-screen printing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M1/00—Inking and printing with a printer's forme
- B41M1/26—Printing on other surfaces than ordinary paper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41P—INDEXING SCHEME RELATING TO PRINTING, LINING MACHINES, TYPEWRITERS, AND TO STAMPS
- B41P2215/00—Screen printing machines
- B41P2215/10—Screen printing machines characterised by their constructional features
- B41P2215/12—Screens
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention discloses an HJT battery silk screen, which comprises two rows of a plurality of main grid lines arranged in parallel; two end point welding spots, a plurality of middle welding spots and a plurality of welding spot connecting lines are arranged on each main grid line. The printing method comprises the following steps: (1) performing texturing treatment on the N-type monocrystalline silicon wafer to form a pyramid textured surface, removing impurity ions, and cleaning the surface; (2) respectively preparing a double-intrinsic amorphous silicon layer and a doped amorphous silicon layer on the front side and the back side of the N-type monocrystalline silicon wafer, and depositing an ITO film; (3) forming front and back crystal-form electrodes by step-by-step screen printing, and curing; (4) testing and sorting, and performing series welding production on the assembly end. By using the HJT battery silk screen to print, after a battery piece is manufactured, the repair proportion of a welding rosin joint string and the repair proportion before a layer of the assembly is greatly reduced, and the manual repair cost is reduced; the power attenuation or failure after the assembly is manufactured is avoided, and the influence of the insufficient solder on the service life of the assembly is avoided.
Description
Technical Field
The invention relates to the technical field of solar cell manufacturing, in particular to an HJT cell screen and a printing method thereof.
Background
With the development of solar cell technology, the development of high-efficiency cells is more and more emphasized. Among them, a silicon-based heterojunction solar cell (HJT cell) passivated with an amorphous silicon intrinsic layer (a-Si: h (i)) is one of the important research directions.
As is well known, the silicon-based heterojunction solar cell not only has high conversion efficiency and high open-circuit voltage, but also has the advantages of low temperature coefficient, no Light Induced Degradation (LID), no induced degradation (PID), low preparation process temperature and the like. In addition, the silicon-based heterojunction battery ensures high conversion efficiency, and the thickness of the silicon wafer can be reduced to 100 mu m, so that the consumption of silicon materials is effectively reduced, and the silicon-based heterojunction battery can be used for preparing a bendable battery component.
Due to the limitation of a low-temperature process, the screen printing of the HJT battery adopts low-temperature slurry. The existing low-temperature slurry welding window is poor compared with the conventional slurry, and the phenomena of insufficient solder, empty solder and the like are more likely to occur when the corresponding component end is welded, so that the string repair and the pre-layer repair proportion are seriously increased. In the actual generation process, the positions of the cold joint of the assembly end are mainly the head and tail cold joints. The following conclusions can be obtained by designing different sizes of the bonding pads at two ends to carry out welding test research: the reduction of the false soldering proportion is obviously improved by lengthening the length of the welding discs at the two ends parallel to the welding strip, but the consumption of slurry at the battery end is increased, so that the cost of the silver paste is greatly increased. Keep under the silver thick liquid cost circumstances, weld the area length through shortening both ends pad perpendicular to, can maintain the silver thick liquid quantity, nevertheless will bring simultaneously and weld the area welding skew window and diminish, lead to welding the area slightly offset after, can't weld to the pad on the problem.
Therefore, how to develop a method compatible with the cost of silver paste and improving the ratio of the false soldering of the device is urgent.
Disclosure of Invention
In view of the above, the present invention provides a screen for an HJT battery and a printing method thereof, which solves the problems of insufficient solder joint and desoldering of a heterojunction battery piece during the assembly end welding process, thereby reducing the string repair and pre-layer repair ratio of the assembly, and reducing the manual repair cost; the attenuation or failure of power after the assembly is manufactured is avoided; the influence of the insufficient solder on the service life of the assembly is avoided.
In order to achieve the purpose, the invention adopts the following technical scheme:
a screen mesh of an HJT battery comprises two rows of a plurality of main grid lines which are arranged in parallel; each main grid line is provided with two end point welding spots, a plurality of middle welding spots and a plurality of welding spot connecting lines; two end point welding spots are respectively arranged at two ends of the main grid line, a middle welding spot is arranged between the two end point welding spots, and a welding spot connecting line is arranged between the two end point welding spots and the middle welding spot.
Furthermore, the number of the main grid lines is 6-12 in each row, the distance between adjacent main grid lines is 13-35mm, the main grid lines are arranged at two ends of the battery in parallel, and the upper row and the lower row are in a symmetrical structure. Further, the number of the main grid lines is 9 per row.
Furthermore, the end point welding points comprise top end welding points and bottom end welding points; the width of the top welding spot is 0.4-2.0mm, the height is 0.1-1.0mm, and the radius of the circular arc is 0.1-0.5 mm; the width of the bottom welding point is 0.2-1.5mm, the height is 0.2-2.0mm, and the radius of the circular arc is 0.1-0.5 mm. Furthermore, the width of the top welding spot is 1.3mm, the height is 0.5mm, and the radius of the circular arc is 0.2 mm; the width of the bottom welding point is 0.4mm, the height is 0.8mm, and the radius of the circular arc is 0.2 mm.
The beneficial effects of adopting above-mentioned further technical scheme lie in, the end point solder joint more is favorable to welding the area and melts tin extension, promotes the area of contact of soldering tin and main grid line, promotes the pulling force.
Furthermore, the number of the middle welding points is 3-6, the width is 0.4-2.0mm, the height is 0.2-1.5mm, and the radius of the circular arc is 0.1-0.5 mm. Furthermore, the width of the middle welding point is 1.0mm, the height is 0.8mm, and the radius of the circular arc is 0.2 mm.
The beneficial effects of adopting above-mentioned further technical scheme lie in, middle solder joint more is favorable to welding the area and melts tin extension, promotes the area of contact of soldering tin and main grid line, promotes the pulling force.
Furthermore, the width of the welding spot connecting line is 0.02-0.10 mm. Furthermore, the width of the solder joint connecting line is 0.08 mm.
The welding spot connecting line has the beneficial effects that the welding spot connecting line is used for connecting adjacent end points and middle welding spots on the same main grid line.
A printing method of the screen of the HJT battery specifically comprises the following steps:
(1) performing texturing treatment on the N-type monocrystalline silicon wafer to form a pyramid textured surface, removing impurity ions, and cleaning the surface;
(2) respectively preparing a double-intrinsic amorphous silicon layer and a doped amorphous silicon layer on the front side and the back side of the N-type monocrystalline silicon wafer, and depositing an ITO film;
(3) forming front and back crystal-form electrodes by step-by-step screen printing, and curing to obtain a cell containing the HJT cell screen;
(4) and testing and sorting the battery pieces containing the HJT battery wire mesh, and performing series welding production at the positive end of the module.
Further, in the step (1), the thickness of the N-type single crystal silicon wafer is 150. mu.m.
Further, in the step (2), the preparation method is plasma chemical vapor deposition; the deposition method is magnetron sputtering.
Further, in the step (3), the curing temperature is 200 ℃.
According to the technical scheme, compared with the prior art, the invention has the following beneficial effects:
1. by using the HJT battery silk screen to print, after a battery piece is manufactured, the repair proportion of a welding rosin joint string and the repair proportion before a layer of the assembly is greatly reduced, and the manual repair cost is reduced; the power attenuation or failure after the assembly is manufactured is avoided, and the influence of the insufficient solder on the service life of the assembly is avoided.
2. The printing method can enlarge the insufficient soldering debugging window of the produced battery piece in the assembly welding process, thereby solving the problem of assembly series welding insufficient soldering and reducing the assembly series welding repair and the layer-before repair.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a screen mesh for an HJT battery according to the present invention;
FIG. 2 is a schematic structural diagram of an end point solder joint of a silk screen of an HJT battery provided by the invention;
fig. 3 is a schematic structural diagram of a middle solder joint of a screen mesh of an HJT battery provided by the present invention.
Wherein, 1-main grid line, 2-end point welding spot, 3-middle welding spot and 4-welding spot connecting line.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The embodiment of the invention discloses an HJT battery silk screen, which comprises two rows of a plurality of main grid lines 1 which are arranged in parallel as shown in figure 1; each main grid line 1 is provided with two end point welding spots 2, a plurality of middle welding spots 3 and a plurality of welding spot connecting lines 4; two end point welding spots 2 are respectively arranged at two ends of the main grid line 1, a middle welding spot 3 is arranged between the two end point welding spots 2, and a welding spot connecting line 4 is arranged between the two end point welding spots 2 and the middle welding spot 3.
In one embodiment, the number of the main grid lines 1 is 9, the distance between adjacent main grid lines 1 is 25mm, the main grid lines 1 are arranged at two ends of the battery in parallel, and the upper and lower rows are in a symmetrical structure. In another embodiment, the number of the main grid lines 1 is 6, the distance between adjacent main grid lines 1 is 35mm, the main grid lines 1 are arranged at two ends of the battery in parallel, and the upper and lower rows are in a symmetrical structure. In other embodiments, the number of the main grid lines 1 is 12 per row, the distance between adjacent main grid lines 1 is 13mm, the main grid lines 1 are arranged at two ends of the battery in parallel, and the upper and lower rows are in a symmetrical structure.
In one embodiment, as shown in FIG. 2, endpoint pads 2 comprise a top pad and a bottom pad; the width a of the top welding spot is 1.3mm, the height c is 0.5mm, and the arc radius Re is 0.2 mm; the width b of the bottom welding point is 0.4mm, the height d is 0.8mm, and the radius Rf of the circular arc is 0.2 mm. In another embodiment, the width a of the tip weld is 0.4mm, the height c is 0.1mm, and the arc radius Re is 0.1 mm; the width b of the bottom welding point is 0.2mm, the height d is 0.2mm, and the radius Rf of the circular arc is 0.1 mm. In other embodiments, the width a of the tip weld is 2.0mm, the height c is 1.0mm, and the arc radius Re is 0.5 mm; the width b of the bottom welding point is 1.5mm, the height d is 2.0mm, and the radius Rf of the circular arc is 0.5 mm. The end point welding points 2 are more beneficial to the extension of the molten tin of the welding strip, the contact area of the soldering tin and the main grid line is increased, and the pulling force is increased.
In one embodiment, as shown in FIG. 3, the number of intermediate pads 3 is 5, the width a is 1.0mm, the height b is 0.8mm, and the arc radius Rc is 0.2 mm. In another embodiment, the number of intermediate pads 3 is 3, the width a is 0.4mm, the height b is 0.2mm, and the arc radius Rc is 0.1 mm. In other embodiments, the number of intermediate pads 3 is 6, the width a is 2.0mm, the height b is 1.5mm, and the arc radius Rc is 0.5 mm. The middle welding point 3 is more favorable for the extension of the molten tin of the welding strip, the contact area of the soldering tin and the main grid line is increased, and the pulling force is increased.
In one embodiment the width of the solder joint connection lines 4 is 0.08 mm. In another embodiment the width of the solder joint connection lines 4 is 0.02 mm. In other embodiments the width of the solder joint connection lines 4 is 0.10 mm. In the invention, the welding spot connecting wire 4 is used for connecting adjacent end points on the same main grid line 1 and the middle welding spot 3.
Example 1
A printing method of the screen of the HJT battery specifically comprises the following steps:
(1) carrying out texturing treatment on an N-type monocrystalline silicon wafer with the thickness of 150 mu m to form a pyramid textured surface, removing impurity ions, and cleaning the surface;
(2) preparing a double-intrinsic amorphous silicon layer and a doped amorphous silicon layer on the front side and the back side of the N-type monocrystalline silicon wafer through plasma chemical vapor deposition respectively, and depositing an ITO film through magnetron sputtering;
(3) forming front and back crystal-form electrodes by step-by-step screen printing, and curing at 200 ℃ to obtain a cell containing an HJT cell screen;
the number of the main grid lines 1 is 9, the distance between every two adjacent main grid lines 1 is 25mm, the main grid lines 1 are arranged at two ends of the battery in parallel, and the upper and lower rows are in a symmetrical structure;
the end point welding points 2 comprise top end welding points and bottom end welding points; the width a of the top welding spot is 1.3mm, the height c is 0.5mm, and the arc radius Re is 0.2 mm; the width b of the bottom welding spot is 0.4mm, the height d is 0.8mm, and the radius Rf of the circular arc is 0.2 mm;
the number of the middle welding points 3 is 5, the width a is 1.0mm, the height b is 0.8mm, and the arc radius Rc is 0.2 mm;
the width of the welding spot connecting line 4 is 0.08 mm;
(4) and testing and sorting the battery pieces containing the HJT battery wire mesh, and performing series welding production at the positive end of the module.
Example 2
A printing method of the screen of the HJT battery specifically comprises the following steps:
(1) carrying out texturing treatment on an N-type monocrystalline silicon wafer with the thickness of 150 mu m to form a pyramid textured surface, removing impurity ions, and cleaning the surface;
(2) preparing a double-intrinsic amorphous silicon layer and a doped amorphous silicon layer on the front side and the back side of the N-type monocrystalline silicon wafer through plasma chemical vapor deposition respectively, and depositing an ITO film through magnetron sputtering;
(3) forming front and back crystal-form electrodes by step-by-step screen printing, and curing at 200 ℃ to obtain a cell containing an HJT cell screen;
the number of the main grid lines 1 is 6, the distance between every two adjacent main grid lines 1 is 35mm, the main grid lines 1 are arranged at two ends of the battery in parallel, and the upper and lower rows are in a symmetrical structure;
the end point welding points 2 comprise top end welding points and bottom end welding points; the width a of the top welding spot is 0.4mm, the height c is 0.1mm, and the arc radius Re is 0.1 mm; the width b of the bottom welding spot is 0.2mm, the height d is 0.2mm, and the radius Rf of the circular arc is 0.1 mm;
the number of the middle welding points 3 is 3, the width a is 0.4mm, the height b is 0.2mm, and the arc half Rc diameter is 0.1 mm;
the width of the welding spot connecting line 4 is 0.02 mm;
(4) and testing and sorting the battery pieces containing the HJT battery wire mesh, and performing series welding production at the positive end of the module.
Example 3
A printing method of the screen of the HJT battery specifically comprises the following steps:
(1) carrying out texturing treatment on an N-type monocrystalline silicon wafer with the thickness of 150 mu m to form a pyramid textured surface, removing impurity ions, and cleaning the surface;
(2) preparing a double-intrinsic amorphous silicon layer and a doped amorphous silicon layer on the front side and the back side of the N-type monocrystalline silicon wafer through plasma chemical vapor deposition respectively, and depositing an ITO film through magnetron sputtering;
(3) forming front and back crystal-form electrodes by step-by-step screen printing, and curing at 200 ℃ to obtain a cell containing an HJT cell screen;
the number of the main grid lines 1 is 12, the distance between every two adjacent main grid lines 1 is 13mm, the main grid lines 1 are arranged at two ends of the battery in parallel, and the upper and lower rows are in a symmetrical structure;
the end point welding points 2 comprise top end welding points and bottom end welding points; the width a of the top welding spot is 2.0mm, the height c is 1.0mm, and the arc radius Re is 0.5 mm; the width b of the bottom welding spot is 1.5mm, the height d is 2.0mm, and the radius Rf of the circular arc is 0.5 mm;
the number of the middle welding points 3 is 6, the width a is 2.0mm, the height b is 1.5mm, and the arc radius Rc is 0.5 mm;
the width of the welding spot connecting line 4 is 0.10 mm;
(4) and testing and sorting the battery pieces containing the HJT battery wire mesh, and performing series welding production at the positive end of the module.
Comparative example
The only difference from example 1 is that in step (3), the width a of the apex weld is 1.3mm, the height c is 1.1mm, and the radius Re of the circular arc is 0.2 mm; the width b of the bottom welding point is 1.3mm, the height d is 1.1mm, and the radius Rf of the circular arc is 0.2 mm.
Performance testing
Statistics is given to the ratio of series rework and pre-layer rework caused by insufficient solder in the production process of the components in example 1 and comparative example.
The results show that in the production process of the comparative example component, the repair ratio of the series and the pre-layer repair caused by the insufficient solder is 1.1%; in the production process of the assembly in example 1, the repair ratio of the series and the pre-layer repair caused by the insufficient solder is 0.6%, which is reduced by 0.5% compared with the comparative example.
According to the technical scheme, compared with the prior art, the invention has the following beneficial effects:
1. by using the HJT battery silk screen to print, after a battery piece is manufactured, the repair proportion of a welding rosin joint string and the repair proportion before a layer of the assembly is greatly reduced, and the manual repair cost is reduced; the power attenuation or failure after the assembly is manufactured is avoided, and the influence of the insufficient solder on the service life of the assembly is avoided.
2. The printing method can enlarge the insufficient soldering debugging window of the produced battery piece in the assembly welding process, thereby solving the problem of assembly series welding insufficient soldering and reducing the assembly series welding repair and the layer-before repair.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (2)
1. The screen mesh for the HJT battery is characterized by comprising two rows of a plurality of main grid lines which are arranged in parallel;
each main grid line is provided with two end point welding spots, a plurality of middle welding spots and a plurality of welding spot connecting lines;
the two end point welding spots are respectively arranged at two ends of the main grid line, the middle welding spot is arranged between the two end point welding spots, and the welding spot connecting line is arranged between the two end point welding spots and the middle welding spot;
the number of the main grid lines is 6-12 in each row, the distance between every two adjacent main grid lines is 13-35mm, the main grid lines are arranged at two ends of the battery in parallel, and the upper row and the lower row are in a symmetrical structure;
the end point welding spots comprise top end welding spots and bottom end welding spots; the width of the top welding spot is 0.4mm or 2.0mm, the height is 0.1-1.0mm, and the radius of the circular arc is 0.1mm or 0.5 mm; the width of the bottom welding spot is 0.2mm, 0.4mm or 1.5mm, the height is 0.2mm, 0.8mm or 2.0mm, and the radius of the circular arc is 0.1mm or 0.5 mm;
the number of the middle welding points is 3-6, the width is 0.4-2.0mm, the height is 0.2-1.5mm, and the radius of the circular arc is 0.1-0.5 mm;
the width of the welding spot connecting line is 0.02-0.10 mm.
2. The method for printing the screen of the HJT cell of claim 1, comprising the steps of:
(1) performing texturing treatment on the N-type monocrystalline silicon wafer to form a pyramid textured surface, removing impurity ions, and cleaning the surface; wherein the thickness of the N-type monocrystalline silicon wafer is 150 μm;
(2) respectively preparing a double-intrinsic amorphous silicon layer and a doped amorphous silicon layer on the front side and the back side of the N-type monocrystalline silicon wafer, and depositing an ITO film; the preparation method is plasma chemical vapor deposition, and the deposition method is magnetron sputtering;
(3) forming front and back crystal-form electrodes by step-by-step screen printing, and curing to obtain a cell containing the HJT cell screen; wherein the curing temperature is 200 ℃;
(4) and testing and sorting the battery pieces containing the HJT battery wire mesh, and performing series welding production at the positive end of the module.
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| CN109585580A (en) * | 2018-11-08 | 2019-04-05 | 晋能光伏技术有限责任公司 | A kind of hetero-junctions high performance solar batteries production method based on stepped construction |
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