CN212750867U - Double-sided heat dissipation packaging device - Google Patents
Double-sided heat dissipation packaging device Download PDFInfo
- Publication number
- CN212750867U CN212750867U CN202021778899.7U CN202021778899U CN212750867U CN 212750867 U CN212750867 U CN 212750867U CN 202021778899 U CN202021778899 U CN 202021778899U CN 212750867 U CN212750867 U CN 212750867U
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- copper
- chip
- sheet
- ceramic
- lead
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model provides a two-sided scattered heat-seal device, includes lead wire foot rest (5), establishes ceramic substrate (2) on lead wire foot rest (5), and ceramic cover copper sheet is all established to ceramic substrate (2) positive and negative, and the pottery is covered and is established SiC MOS chip (4) on the copper sheet, establishes copper lead sheet (3) on SiC MOS chip (4), and copper lead sheet (3) link to each other with positive copper foil (1), establishes chip gate pole (7) on SiC MOS chip (4), and chip gate pole (7) are connected with aluminium wire bonding wire (6). The utility model discloses reduce the whole thermal resistance of product.
Description
Technical Field
The utility model relates to a two-sided heat dissipation encapsulation device.
Background
With the increasing demand for energy conservation and emission reduction in the current society, the new energy industry develops vigorously. The method drives the related fields of new energy power generation, new energy automobiles, rail transit, smart power grids and the like. The rapid development of the industry needs a high-power device with high temperature and high frequency characteristics, the traditional silicon device can only work below the junction temperature of 175 ℃, and for the SiC high-temperature device, the SiC high-power device can work above 250 ℃, has high working temperature and large stable working temperature range, and has considerable superiority under the high-temperature condition. The superior material properties possessed by silicon carbide make it one of the hot spots of international research in the semiconductor field in recent years. However, high power devices often suffer from large power dissipation, and if this limit is exceeded in real-life, the device may suffer irreparable damage. The effective heat dissipation can obviously reduce the power dissipation and ensure a relatively safe working environment of the chip.
At present, the common heat dissipation method of the electronic device is to lock the bottom plate and the heat sink, so as to achieve the effect of heat transfer. The heat generated by the chip under operation is dissipated primarily through the backplane to the heat sink. And an insulating pad is arranged between the bottom plate and the radiating fin, so that the overall thermal resistance of the device is increased undoubtedly.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem, the utility model provides a two-sided scattered hot-seal dress device, including the lead wire foot rest, establish ceramic substrate on the lead wire foot rest, the copper foil is all established to the ceramic substrate positive and negative, establishes the SiC MOS chip on the positive copper foil, establishes the copper lead piece on the SiC MOS chip, and the copper lead piece links to each other with positive copper foil, establishes the chip gate pole on the SiC MOS chip, and the chip gate pole is connected with the aluminium wire bonding wire.
The utility model discloses beneficial effect as follows:
(1) and the lead frame is replaced by a double-sided ceramic copper-clad sheet to form an internal insulation plastic package device. When the device is used on a machine, an insulating pad is not needed to be added, and the device can be directly locked on the radiating fin, so that the integral thermal resistance of a product is reduced.
(2) The copper sheet is adopted to be bonded with the front surface of the chip and the ceramic-coated copper sheet, so that the effect of double-sided heat dissipation is realized, and the service life of the device is prolonged. The copper sheet bonding can effectively bring heat generated by the chip during working to the ceramic-coated copper sheet through the copper sheet, and compared with the traditional lead bonding method, the method has the advantages of larger heat dissipation area, relatively lower thermal resistance and better heat dissipation effect. And for a high-power device, a copper sheet bonding mode is adopted, so that a series of process problems caused by complex wiring, such as regulation and control of factors such as silk shape, arc height and welding spots, can be avoided. In addition, the number of bonding wires is limited by the limited base pin bonding area, and the through-current capacity of the device can be greatly improved by using copper sheet bonding.
(3) The copper lead sheet and the outer lead foot rest are welded on the same copper foil, but not directly welded into a whole. The device needs to be subjected to rib cutting after plastic package is completed, and the outer pins can be subjected to great external force in the rib cutting process. If the copper lead sheet is directly welded on the outer pin, the copper lead sheet is easily affected by external stress, and a welding layer generates a layering phenomenon, thereby bringing hidden danger to product safety. Therefore, the indirect welding method is adopted, on one hand, the electrical interconnection of the chip and the pin is realized, and on the other hand, the layering risk can be avoided.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
In the figure, 1, copper foil, 2, a ceramic substrate, 3, a copper lead sheet, 4, a SiC MOS chip, 5, a lead foot stand, 6, an aluminum wire bonding wire and 7, a chip gate pole.
Detailed Description
As shown in fig. 1, the double-sided heat dissipation packaging device comprises a lead foot stand 5, wherein a ceramic substrate 2 is arranged on the lead foot stand 5, ceramic copper-clad sheets are arranged on the front and back sides of the ceramic substrate 2, a SiC MOS chip 4 is arranged on the ceramic copper-clad sheets, a copper lead sheet 3 is arranged on the SiC MOS chip 4, the copper lead sheet 3 is connected with a front copper foil 1, a chip gate 7 is arranged on the SiC MOS chip 4, and the chip gate 7 is connected with an aluminum wire bonding wire 6.
The ceramic copper-clad sheet is a copper foil 1.
The double-sided copper-clad ceramic plate and the lead foot frame are adopted. The traditional metal radiating fin structure is cancelled, and a ceramic copper-clad sheet is replaced. The ceramic copper-clad sheet is an electronic base material formed by directly sintering copper foil on the surface of ceramic. The front side and the back side of the ceramic copper-clad sheet are respectively sintered with a layer of copper foil with a specific shape, the front side copper foil is used as a carrying area, the back side copper foil is reserved as a contact surface with the radiating fin when a finished product is used on a machine, and the front side copper foil and the back side copper foil are separated by a ceramic layer, so that a special internal insulation structure without a metal radiating fin is formed. The front surface of the ceramic except the carrier area is designed with a copper foil with a specific shape, and the copper foil in the area is used as a welding surface to be connected with a lead foot frame, so that a complete frame structure can be obtained.
The electrical connection between the chip and the terminal pins is realized by the copper lead sheet, and the purpose of heat dissipation of the front side of the chip is achieved. Copper wire Bonding (Clip Bonding) is gradually replacing the traditional wire Bonding process. Because of its lower parasitic inductance of self, resistance can effectively promote current transmission ability, reduces device self consumption, improves product overall efficiency. And because the heat dissipation area is large, the heat dissipation performance of the product is improved. Copper sheet bonding is therefore increasingly being used in semiconductor discrete devices as well as power components. The copper lead sheet mentioned in the invention is used as a gap bridge, one end of the copper lead sheet is welded on the functional area on the surface of the chip, and the other end of the copper lead sheet is welded on the front copper foil of the ceramic copper-clad sheet. The large amount of heat generated by the chip during operation is dissipated through two paths, respectively: the chip front side-copper lead sheet-ceramic coated copper sheet-external heat sink and the chip back side-ceramic coated copper sheet-external heat sink. In addition, the second welding end of the copper lead sheet and one electrode of the lead foot frame are welded on the same copper foil, so that the effect of electrical connection can be achieved.
Claims (2)
1. The utility model provides a two-sided heat dissipation encapsulation device, its characterized in that, including lead wire foot rest (5), establish ceramic substrate (2) on lead wire foot rest (5), ceramic is all established ceramic and is covered the copper sheet to ceramic substrate (2) positive and negative, establish SiC MOS chip (4) on the ceramic covers the copper sheet, establish copper lead wire piece (3) on SiC MOS chip (4), copper lead wire piece (3) link to each other with front copper foil (1), establish chip gate pole (7) on SiC MOS chip (4), chip gate pole (7) are connected with aluminium wire bonding wire (6).
2. A double sided heat sink packaging device according to claim 1, wherein the ceramic copper clad sheet is a copper foil (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021778899.7U CN212750867U (en) | 2020-08-24 | 2020-08-24 | Double-sided heat dissipation packaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021778899.7U CN212750867U (en) | 2020-08-24 | 2020-08-24 | Double-sided heat dissipation packaging device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212750867U true CN212750867U (en) | 2021-03-19 |
Family
ID=74988628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021778899.7U Active CN212750867U (en) | 2020-08-24 | 2020-08-24 | Double-sided heat dissipation packaging device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212750867U (en) |
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2020
- 2020-08-24 CN CN202021778899.7U patent/CN212750867U/en active Active
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