CN212725363U - 发光装置 - Google Patents
发光装置 Download PDFInfo
- Publication number
- CN212725363U CN212725363U CN202021191226.1U CN202021191226U CN212725363U CN 212725363 U CN212725363 U CN 212725363U CN 202021191226 U CN202021191226 U CN 202021191226U CN 212725363 U CN212725363 U CN 212725363U
- Authority
- CN
- China
- Prior art keywords
- light
- emitting diode
- emitting device
- axis
- diode module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000003287 optical effect Effects 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/02—Detecting, measuring or recording pulse, heart rate, blood pressure or blood flow; Combined pulse/heart-rate/blood pressure determination; Evaluating a cardiovascular condition not otherwise provided for, e.g. using combinations of techniques provided for in this group with electrocardiography or electroauscultation; Heart catheters for measuring blood pressure
- A61B5/0205—Simultaneously evaluating both cardiovascular conditions and different types of body conditions, e.g. heart and respiratory condition
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/02—Detecting, measuring or recording pulse, heart rate, blood pressure or blood flow; Combined pulse/heart-rate/blood pressure determination; Evaluating a cardiovascular condition not otherwise provided for, e.g. using combinations of techniques provided for in this group with electrocardiography or electroauscultation; Heart catheters for measuring blood pressure
- A61B5/024—Detecting, measuring or recording pulse rate or heart rate
- A61B5/02416—Detecting, measuring or recording pulse rate or heart rate using photoplethysmograph signals, e.g. generated by infrared radiation
- A61B5/02427—Details of sensor
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/02—Detecting, measuring or recording pulse, heart rate, blood pressure or blood flow; Combined pulse/heart-rate/blood pressure determination; Evaluating a cardiovascular condition not otherwise provided for, e.g. using combinations of techniques provided for in this group with electrocardiography or electroauscultation; Heart catheters for measuring blood pressure
- A61B5/024—Detecting, measuring or recording pulse rate or heart rate
- A61B5/02438—Detecting, measuring or recording pulse rate or heart rate with portable devices, e.g. worn by the patient
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/145—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue
- A61B5/1455—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters
- A61B5/14551—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters for measuring blood gases
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/145—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue
- A61B5/1455—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters
- A61B5/14551—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters for measuring blood gases
- A61B5/14552—Details of sensors specially adapted therefor
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/68—Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient
- A61B5/6801—Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient specially adapted to be attached to or worn on the body surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
- A61B2562/16—Details of sensor housings or probes; Details of structural supports for sensors
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
- A61B2562/16—Details of sensor housings or probes; Details of structural supports for sensors
- A61B2562/164—Details of sensor housings or probes; Details of structural supports for sensors the sensor is mounted in or on a conformable substrate or carrier
Landscapes
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Heart & Thoracic Surgery (AREA)
- Animal Behavior & Ethology (AREA)
- Veterinary Medicine (AREA)
- Public Health (AREA)
- Biophysics (AREA)
- Pathology (AREA)
- Biomedical Technology (AREA)
- General Health & Medical Sciences (AREA)
- Medical Informatics (AREA)
- Molecular Biology (AREA)
- Surgery (AREA)
- Cardiology (AREA)
- Manufacturing & Machinery (AREA)
- Physiology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Pulmonology (AREA)
- Electromagnetism (AREA)
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
本实用新型公开一种发光装置。发光装置包含有一基板、一发光二极管模块及一对称透镜。发光二极管模块设置于基板上,发光二极管模块朝基板的方向的正投影呈长方形并具有一中心点。对称透镜设置于基板上并覆盖发光二极管模块。对称透镜具有一光轴,光轴通过发光二极管模块朝基板的方向的正投影的中心点。发光二极管模块发射的光束通过对称透镜能产生一类长方形光型。据此,发光装置能相较于现有的发光装置具有更低的制造成本,且具有更高的公差容忍度。
Description
技术领域
本实用新型涉及一种发光装置,尤其涉及一种能产生类长方形光型的发光装置。
背景技术
现有的发光装置包含有一芯片及覆盖所述芯片的一透镜,现有的发光装置为了确保所发出的光线(例如:红外光)具有理想的均匀度及光学利用率。因此,现有的发光装置会通过将其透镜设计为不对称,从而使前述光线的光型于两轴上的具有差异(例如:两轴比为16:9),也就是说,所述光线的光型呈长方形。
然而,不对称的透镜相较于对称的透镜更加难以制作,也造成不对称透镜的公差容忍度相较于对称透镜更小。也就是说,现有的发光装置仍有需要改善的空间。
于是,本实用新型人认为上述缺陷可改善,乃特潜心研究并配合科学原理的运用,终于提出一种设计合理且有效改善上述缺陷的本实用新型。
实用新型内容
本实用新型所要解决的技术问题在于,针对现有技术的不足提供一种发光装置。
本实用新型实施例公开一种发光装置,其包括:一基板;一发光二极管模块,其设置于所述基板上,所述发光二极管模块朝所述基板的方向的正投影呈长方形并具有一中心点;以及
一对称透镜,设置于所述基板上并覆盖所述发光二极管模块,所述对称透镜具有一光轴,所述光轴通过所述发光二极管模块朝所述基板的方向的所述中心点;其中,所述发光二极管模块发射的光束通过所述对称透镜能产生一类长方形光型。
优选地,所述发光二极管模块包含呈长方形的至少一个芯片,至少一个所述芯片具有长边及短边,所述长边与所述短边的长度比值为1.25至6.6倍。
优选地,至少一个所述芯片的数量为多个,多个所述芯片数组排列呈长方形。
优选地,多个所述芯片彼此间隔配置,任两个所述芯片之间具有一间隔距离,所述间隔距离介于0.05毫米至0.3毫米之间。
优选地,所述发光二极管模块包含一扩散件,所述扩散件设置于至少一个所述芯片上,所述发光二极管模块由其顶面所发出的所述光束将通过所述扩散件而向外射出。
优选地,所述对称透镜具有一半径及一高度,所述半径与所述高度的比值为0.3至2倍。
优选地,所述半径的长度介于0.5毫米至5毫米之间。
优选地,所述基板具有一凹槽,所述发光二极管模块设置于所述凹槽内,所述凹槽的高度大于所述发光二极管模块的高度,所述对称透镜设置于所述发光二极管模块的一侧且覆盖所述凹槽。
优选地,所述对称透镜不包含光转换物质或扩散粒子。
优选地,所述对称透镜的透明度大于85%。
优选地,所述类长方形光型具有一长轴及一短轴,所述长轴的最大光强度的绝对值介于40度至50度之间。
优选地,所述类长方形光型具有一长轴及一短轴,当所述长轴的光强度及所述短轴的光强度位于0度的角度时,所述长轴的光强度及所述短轴的光强度介于0.8至1之间。
优选地,所述长轴的光强度具有一长轴半高全宽,所述短轴的光强度具有一短轴半高全宽,所述长轴半高全宽与所述短轴半高全宽的比值介于1.05至1.8之间。
综上所述,本实用新型实施例所公开的发光装置,通过所述发光二极管模块朝所述基板的方向的正投影呈长方形,且所述对称透镜覆盖所述发光二极管模块的设计,使所述发光二极管模块发射的光束通过所述对称透镜时能产生所述类长方形光型。据此,所述发光装置能相较于现有的发光装置具有更低的制造成本,且具有更高的公差容忍度。
为能更进一步了解本实用新型的特征及技术内容,请参阅以下有关本实用新型的详细说明与附图,但是此等说明与附图仅用来说明本实用新型,而非对本实用新型的保护范围作任何的限制。
附图说明
图1为本实用新型的第一实施例的发光装置的俯视示意图。
图2为本实用新型的第一实施例的发光装置的侧视示意图。
图3为本实用新型的第一实施例的发光装置的另一视角侧视示意图。
图4为本实用新型的第一实施例的发光装置的类长方形光型于归一化光强度及角度的曲线示意图。
图5为本实用新型的第二实施例的发光装置的俯视示意图。
图6为本实用新型的第三实施例的发光装置的侧视示意图。
图7为本实用新型的第三实施例的发光装置的俯视示意图(一)。
图8为本实用新型的第三实施例的发光装置的俯视示意图(二)。
图9为本实用新型的第四实施例的发光装置的俯视示意图。
图10为本实用新型的第四实施例的发光装置的侧视示意图。
具体实施方式
以下是通过特定的具体实施例来说明本实用新型所公开的实施方式,本领域技术人员可由本说明书所公开的内容了解本实用新型的优点与效果。本实用新型可通过其他不同的具体实施例加以施行或应用,本说明书中的各项细节也可基于不同观点与应用,在不悖离本实用新型的构思下进行各种修改与变更。另外,本实用新型的附图仅为简单示意说明,并非依实际尺寸的描绘,事先声明。以下的实施方式将进一步详细说明本实用新型的相关技术内容,但所公开的内容并非用以限制本实用新型的保护范围。
应当可以理解的是,虽然本文中可能会使用到“第一”、“第二”、“第三”等术语来描述各种组件或者信号,但这些组件或者信号不应受这些术语的限制。这些术语主要是用以区分一组件与另一组件,或者一信号与另一信号。另外,本文中所使用的术语“或”,应视实际情况可能包括相关联的列出项目中的任一个或者多个的组合。再者,本文中所使用的述语“电性耦接”指的是“间接电性连接”及“直接电性连接”的其中之一。
[第一实施例]
参阅图1至图4所示,本实施例提供一种发光装置100。所述发光装置100包含有一基板1、设置于所述基板1的一发光二极管模块2、及覆盖所述发光二极管模块2的一对称透镜3。所述发光装置100的所述发光二极管模块2发射的光束会通过所述对称透镜3,从而产生一类长方形光型,需强调的是所述类长方形光型举例来说可以是长方形、四个角为倒角的长方形、四个角为倒圆角的长方形等。换个角度说,任何不是光束通过对称透镜而产生类长方形光型的发光装置,并非本实用新型所指的发光装置100。以下将分别介绍所述发光装置100的各个组件构造,并适时说明所述发光装置100的各个组件彼此之间的连接关系。
参阅图1及图2所示,所述基板1为片状结构,所述发光二极管模块2朝所述基板1的方向的正投影呈长方形并具有一中心点G。具体来说,所述发光二极管模块2包含至少一个芯片21,至少一个所述芯片21于本实施例中的数量为一个,所述芯片21能发出一光束,所述光束由所述芯片21的顶面发出,但不排除从所述芯片21的侧面发出。
所述芯片21配置于所述基板1上,所述芯片21朝所述基板1的方向的正投影具有所述中心点G。所述芯片21呈长方形具有一长边及一短边,所述芯片21的所述长边及所述短边的比值为1.25至6.6倍,从而使所述芯片21的电流分布较为均匀以避免电流拥挤现象产生。
配合图1及图2所示,所述对称透镜3设置于所述基板1上并覆盖所述芯片21,所述对称透镜3具有一光轴LA,所述光轴LA通过所述芯片21朝所述基板1的方向的正投影的所述中心点G。进一步地说,所述对称透镜3具有一半径r1及一高度h1,所述半径r1与所述高度h1的比值为0.3至2倍,且所述半径r1的长度是介于0.5毫米至5毫米之间。换个方式说,所述对称透镜3的直径是大于所述芯片21(所述发光二极管模块2)的所述长边。
另外,所述对称透镜3于本实施例中较佳不包含任何光转换物质或扩散粒子,以避免干扰所述芯片21的光束在通过所述对称透镜3所产生的类长方形光型。此外,所述对称透镜3的透明度大于85%,以减少能量损耗。
进一步地说,所述发光二极管模块2(所述芯片21)定义有沿着其顶面长边2a的一X轴方向DX、沿着其顶面短边2b的一Y轴方向DY及垂直所述X轴方向DX及所述Y轴方向DY的一Z轴方向DZ。配合图2所示,当所述发光装置100以所述X轴方向DX及所述Z轴方向DZ的平面观之时,所述X轴方向DX的光束L1于所述对称透镜3内发生全反射,使所述发光二极管模块2(所述芯片21)的小角度的光束无法由所述对称透镜3射出。
配合图3所示,当所述发光装置100以所述Y轴方向DY及所述Z轴方向DZ的平面观之时,所述X轴方向DX的光束L1偏折会相较于所述Y轴方向DY的光束L2偏折少,从而使所述X轴方向DX与所述Y轴方向DY的发散角度不一样,从而让所述发光二极管模块2(所述芯片21)的所述光束通过所述对称透镜3时,能于所述X轴方向DX及所述Y轴方向DY之间具有差异以产生所述类长方形光型。
配合参阅图4所示,所述类长方形光型具有一长轴AX1及一短轴AX2。如图4所示,所述类长方形光型于归一化光强度及角度的曲线图中,所述长轴AX1及所短轴AX2相对于0度角呈对称曲线,且所述长轴AX1的最大光强度Br1具有两个,两个所述长轴AX1的最大光强度Br1大致相等且各别位于-40度至-50度之间及40度至50度之间,也就是说,所述长轴AX1的最大光强度Br1的绝对值介于40至50度之间,所述短轴AX2的最大光强度Br2则为于-15度至15度之间。当所述长轴AX1与所述短轴AX2的光强度位于0度的角度时,所述长轴AX1的光强度及所述短轴AX2的光强度介于0.8至1之间。
此外,所述长轴AX1的光强度具有一长轴半高全宽HW1,所述短轴AX2的光强度具有一短轴半高全宽HW2,长轴与短轴的半全宽就是对应于现行业界中所定义的可视角度(Viewangle)。在本实用新型中,所述长轴半高全宽HW1与所述短轴半高全宽HW2的比值(也就是长轴与短轴的可视角比值)介于1.05至1.8之间。举例来说,如图4所示,所述长轴AX1的光强度最大值大致为1,而所述长轴AX1的光强度的一半大致为0.5;当所述长轴AX1的光强度于0.5时,所述长轴AX1的角度大致介于-65度至65度之间,也就是说所述长轴半高全宽HW1为130度。所述短轴AX2的光强度最大值大致为0.85,而所述短轴AX2的光强度的一半大致为0.425;当所述短轴AX2的光强度于0.425时,所述短轴AX2的角度大致介于-40度至40度之间,也就是说所述短轴半高全宽HW2为80度。由此可知,所述长轴半高全宽HW1与所述短轴半高全宽HW2的比值为1.625,但本实用新型不受限于此实施例所载。所述类长方形光型通过所述长轴半高全宽HW1与所述短轴半高全宽HW2的比值介于1.05至1.8之间的设计,能有效大幅提升所述类长方形光型的均匀度且避免能量浪费。
[第二实施例]
如图5所示,其为本实用新型的第二实施例,本实施例类似于上述第一实施例,两个实施例的相同处则不再加以赘述,而本实施例相较于上述第一实施例的差异主要在于:
所述发光二极管模块2的至少一个所述芯片的数量于本实施例中为多个,多个所述芯片21数组排列呈长方形并定义为一长方形数组M。具体来说,图5中所示的所述长方形数组M具有彼此间隔配置的三个所述芯片21,多个所述芯片21以一乘三的数组方式排列,但本实用新型不受限于本实施例所载。举例来说,本实用新型于未绘示的其他实施例中,多个所述芯片21的数量也可以是三、四、…、或八等,并且可以是以一乘三、二乘二、或四乘二等方式排列。
进一步地说,所述长方形数组M朝所述基板1的方向的正投影具有所述中心点G,且所述对称透镜3的所述光轴LA通过所述中心点G。此外,于所述长方形数组M中的任两个所述芯片21之间具有一间隔距离L,所述间隔距离L介于0.05毫米至0.3毫米之间。
另外说明的是,所述长方形数组M的多个所述芯片21的顶面的一侧长度总和大于另一侧长度总和,长度总和较大的一侧为所述发光二极管模块2的所述顶面长边2a,长度总和较小的一侧为所述发光二极管模块2的所述顶面短边2b。所述发光二极管模块2能通过前述第一实施例所说明的方式,通过所述X轴方向DX的光束及所述Y轴方向DY的光束之间的差异以产生所述类长方形光型。
[第三实施例]
如图6至图8所示,其为本实用新型的第三实施例,本实施例类似于上述第一实施例或第二实施例,两个实施例的相同处则不再加以赘述,而本实施例相较于上述第一实施例的差异主要在于:
所述发光二极管模块2更包含有一扩散件22及一接合体23。所述扩散件22设置于至少一个所述芯片21上,所述接合体23配置于至少一个所述芯片21与所述扩散件22之间,从而固定至少一个所述芯片21与所述扩散件22,其中所述接合体23优选为硅氧树脂(silicone)或环氧树脂(epoxy),但本实用新型不受限于本实施例所载。详细地说,所述扩散件22呈长方形,且所述扩散件22的材料可以选用玻璃、陶瓷、或硅氧树脂,但本实用新型不受限于本实施例所载。所述扩散件22是覆盖至少一个所述芯片21的顶面,但本实用新型不受限于本实施例所载。举例来说,本实用新型于未绘示的其他实施例中,所述扩散件22也可以是同时覆盖至少一个所述芯片21的顶面及四周侧面。
参阅图7或图8所示,所述扩散件22朝所述基板1的方向的正投影具有所述中心点G,且所述对称透镜3的所述光轴LA通过所述中心点G。所述扩散件22于本实施例中的高度h2介于0.05毫米至0.3毫米之间(如图6所示),所述扩散件22朝向至少一个所述芯片21的一侧面与至少一个所述芯片21直接接触,所述扩散件22朝向所述对称透镜3的一侧面与所述对称透镜3直接接触,从而使由至少一个所述芯片21的顶面射出的所述光束能通过所述扩散件22经由所述对称透镜3而向外射出。
另外,所述扩散件22进一步地设置有多个散射颗粒24或多个光转换物质(图中未示),所述芯片21发出的所述光束能通过多个所述散射颗粒24或多个所述光转换物质的散射而进入所述对称透镜3,其中多个所述散射颗粒24的材料可以选用二氧化钛(TiO2)、二氧化硅(SiO2)、或二氧化锆(ZrO2)等,但本实用新型不受限于本实施例所载。
需说明的是,所述扩散件22的顶面长边为第一实施例所指的所述发光二极管模块2的所述顶面长边2a,所述扩散件22的顶面短边为第一实施例所指的所述发光二极管模块2的所述顶面短边2b。所述发光二极管模块2能通过前述第一实施例所说明的方式,通过所述X轴方向DX的光束及所述Y轴方向DY的光束之间的差异以产生所述类长方形光型。
另外,当本实施例对应第一实施例时,也就是图7所示,本实施例所载“至少一个所述芯片”为第一实施例所指的一个所述芯片;当本实施例对应第二实施例时,也就是图8所示,本实施例所载“至少一个所述芯片”为第二实施例所指的多个所述芯片。
[第四实施例]
如图9及图10所示,其为本实用新型的第四实施例,本实施例类似于上述第一实施例,两个实施例的相同处则不再加以赘述,而本实施例相较于上述第一实施例的差异主要在于:
所述基板1于本实施例中具有呈圆形的一凹槽11。所述发光二极管模块2设置于所述基板1的所述凹槽11内。具体来说,所述芯片21配置于所述凹槽11的中心处,使所述芯片21朝所述基板1的方向的正投影的所述中心点G与所述凹槽11的所述底面的圆心C迭合。进一步地,所述芯片21的高度是小于或等于所述凹槽11的高度(深度),使所述芯片21的顶面不会高于所述基板1。
所述对称透镜3设置于所述基板1上并覆盖所述发光二极管模块2。进一步地说,所述对称透镜3设置于所述凹槽11上,所述对称透镜3的所述光轴LA同时通过所述芯片21朝所述基板1的方向的正投影的所述中心点G及所述凹槽11的所述底面的圆心C。所述对称透镜3的底部于本实施例中是直接与所述芯片21的顶面接触,但本实用新型不受限于本实施例所载。所述对称透镜3的直径于本实施例中大于或等于所述凹槽11的直径,从而所述对称透镜3完全遮挡所述凹槽11且覆盖所述发光二极管模块2(所述芯片21)。
优选地,所述凹槽11于其环周侧更进一步地形成有一反射斜面111,所述凹槽11的底面为平坦状且与所述反射斜面111具有一夹角θ,所述夹角θ理想介于90度至180度之间。当所述芯片21发出所述光束时,部份的所述光束能通过所述反射斜面111反射至所述对称透镜3内,从而使所述发光装置100具有更好的出光效率。
值得一提的是,本实用新型于未绘示的其他实施例中,所述发光二极管模块2的芯片2数量也可以是多个(也就是如上述第二实施例所示)。
[本实用新型实施例的技术效果]
综上所述,本实用新型实施例所公开的发光装置100,通过所述发光二极管模块2朝所述基板1的方向的正投影呈长方形,且所述对称透镜3覆盖所述发光二极管模块2的设计,使所述发光二极管模块2发射的光束通过所述对称透镜3时能产生所述类长方形光型。据此,所述发光装置100能相较于现有的发光装置具有更低的制造成本,且具有更高的公差容忍度。
以上所述仅为本实用新型的优选可行实施例,并非用来局限本实用新型的保护范围,凡依本实用新型申请专利范围所做的均等变化与修饰,皆应属本实用新型的权利要求书的保护范围。
Claims (13)
1.一种发光装置,其特征在于,所述发光装置包括:
一基板;
一发光二极管模块,其设置于所述基板上,所述发光二极管模块朝所述基板的方向的正投影呈长方形并具有一中心点;以及
一对称透镜,设置于所述基板上并覆盖所述发光二极管模块,所述对称透镜具有一光轴,所述光轴通过所述发光二极管模块朝所述基板的方向的所述中心点;
其中,所述发光二极管模块发射的光束通过所述对称透镜能产生一类长方形光型。
2.依据权利要求1所述的发光装置,其特征在于,所述发光二极管模块包含呈长方形的至少一个芯片,至少一个所述芯片具有长边及短边,所述长边与所述短边的长度比值为1.25至6.6倍。
3.依据权利要求2所述的发光装置,其特征在于,至少一个所述芯片的数量为多个,多个所述芯片数组排列呈长方形。
4.依据权利要求3所述的发光装置,其特征在于,多个所述芯片彼此间隔配置,任两个所述芯片之间具有一间隔距离,所述间隔距离介于0.05毫米至0.3毫米之间。
5.依据权利要求2至4任一项所述的发光装置,其特征在于,所述发光二极管模块包含一扩散件,所述扩散件设置于至少一个所述芯片上,所述发光二极管模块由其顶面所发出的所述光束将通过所述扩散件而向外射出。
6.依据权利要求1所述的发光装置,其特征在于,所述对称透镜具有一半径及一高度,所述半径与所述高度的比值为0.3至2倍。
7.依据权利要求6所述的发光装置,其特征在于,所述半径的长度介于0.5毫米至5毫米之间。
8.依据权利要求1所述的发光装置,其特征在于,所述基板具有一凹槽,所述发光二极管模块设置于所述凹槽内,所述凹槽的高度大于所述发光二极管模块的高度,所述对称透镜设置于所述发光二极管模块的一侧且覆盖所述凹槽。
9.依据权利要求1所述的发光装置,其特征在于,所述对称透镜不包含光转换物质或扩散粒子。
10.依据权利要求1所述的发光装置,其特征在于,所述对称透镜的透明度大于85%。
11.依据权利要求1所述的发光装置,其特征在于,所述类长方形光型具有一长轴及一短轴,所述长轴的最大光强度的绝对值介于40度至50度之间。
12.依据权利要求1所述的发光装置,其特征在于,所述类长方形光型具有一长轴及一短轴,当所述长轴的光强度及所述短轴的光强度位于0度的角度时,所述长轴的光强度及所述短轴的光强度介于0.8至1之间。
13.依据权利要求12所述的发光装置,其特征在于,所述长轴的光强度具有一长轴半高全宽,所述短轴的光强度具有一短轴半高全宽,所述长轴半高全宽与所述短轴半高全宽的比值介于1.05至1.8之间。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962885872P | 2019-08-13 | 2019-08-13 | |
US62/885,872 | 2019-08-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN212725363U true CN212725363U (zh) | 2021-03-16 |
Family
ID=74602811
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010364269.3A Pending CN112397630A (zh) | 2019-08-13 | 2020-04-30 | 发光装置 |
CN202021191226.1U Active CN212725363U (zh) | 2019-08-13 | 2020-06-23 | 发光装置 |
CN202010701758.3A Pending CN112397605A (zh) | 2019-08-13 | 2020-07-20 | 感测装置 |
CN202021628300.1U Active CN212587505U (zh) | 2019-08-13 | 2020-08-07 | 光学模块和电子装置 |
CN202010796460.5A Active CN112397627B (zh) | 2019-08-13 | 2020-08-10 | 发光装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010364269.3A Pending CN112397630A (zh) | 2019-08-13 | 2020-04-30 | 发光装置 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010701758.3A Pending CN112397605A (zh) | 2019-08-13 | 2020-07-20 | 感测装置 |
CN202021628300.1U Active CN212587505U (zh) | 2019-08-13 | 2020-08-07 | 光学模块和电子装置 |
CN202010796460.5A Active CN112397627B (zh) | 2019-08-13 | 2020-08-10 | 发光装置 |
Country Status (1)
Country | Link |
---|---|
CN (5) | CN112397630A (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022226738A1 (zh) * | 2021-04-26 | 2022-11-03 | 泉州三安半导体科技有限公司 | 一种发光装置 |
CN117838073A (zh) * | 2022-09-30 | 2024-04-09 | 荣耀终端有限公司 | 一种ppg模组及其制作方法、电子设备 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003298305A (ja) * | 2002-03-28 | 2003-10-17 | Fujitsu Quantum Devices Ltd | 高周波スイッチ装置及びこれを用いた電子装置 |
JP2003332448A (ja) * | 2002-05-14 | 2003-11-21 | Mitsubishi Electric Corp | 半導体装置 |
JP3942495B2 (ja) * | 2002-06-21 | 2007-07-11 | 株式会社ルネサステクノロジ | 半導体装置 |
TWM257518U (en) * | 2004-03-19 | 2005-02-21 | Lite On Technology Corp | Optoelectronic semiconductor component |
JP2007305844A (ja) * | 2006-05-12 | 2007-11-22 | Stanley Electric Co Ltd | 発光装置とその製造方法 |
TW201032319A (en) * | 2009-02-25 | 2010-09-01 | Everlight Electronics Co Ltd | Semiconductor optoelectronic device and quad flat non-leaded optoelectronic device |
DE102010012602B4 (de) * | 2010-03-24 | 2023-02-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes Halbleiterbauteil sowie Anzeigevorrichtung und Herstellungsverfahren |
KR101039994B1 (ko) * | 2010-05-24 | 2011-06-09 | 엘지이노텍 주식회사 | 발광소자 및 이를 구비한 라이트 유닛 |
WO2012039115A1 (ja) * | 2010-09-24 | 2012-03-29 | オンセミコンダクター・トレーディング・リミテッド | 回路装置 |
CN102427075B (zh) * | 2010-10-12 | 2013-08-21 | 友达光电股份有限公司 | 发光二极管装置及场序显示器 |
CN102809764A (zh) * | 2011-05-13 | 2012-12-05 | 英特赛尔美国股份有限公司 | 用于透明层隔离的系统和方法 |
TWI458113B (zh) * | 2012-05-04 | 2014-10-21 | Taiwan Ic Packaging Corp | Proximity sensor and its manufacturing method |
CN104157770B (zh) * | 2013-05-14 | 2017-01-25 | 展晶科技(深圳)有限公司 | 发光二极管模组 |
JP6316086B2 (ja) * | 2014-05-09 | 2018-04-25 | 三菱電機株式会社 | 樹脂封止型電力用半導体装置及びその製造方法 |
CN104332524B (zh) * | 2014-08-26 | 2018-01-09 | 日月光半导体制造股份有限公司 | 电子装置、光学模块及其制造方法 |
TWI580990B (zh) * | 2015-12-27 | 2017-05-01 | 昇佳電子股份有限公司 | 感測裝置及感測裝置製作方法 |
CN205752171U (zh) * | 2016-05-17 | 2016-11-30 | 歌尔股份有限公司 | 一种光学传感器封装结构 |
CN205911310U (zh) * | 2016-07-18 | 2017-01-25 | 研晶光电股份有限公司 | 光源模块 |
CN106328795A (zh) * | 2016-10-21 | 2017-01-11 | 电子科技大学 | 一种医用光疗的pc‑LEDs灯 |
TW201824524A (zh) * | 2016-12-30 | 2018-07-01 | 菱生精密工業股份有限公司 | 光學模組的封裝結構 |
CN108269793A (zh) * | 2016-12-30 | 2018-07-10 | 菱生精密工业股份有限公司 | 光学模块的封装结构 |
JP6652117B2 (ja) * | 2017-11-29 | 2020-02-19 | 日亜化学工業株式会社 | 樹脂パッケージおよび発光装置 |
CN109027779A (zh) * | 2018-06-27 | 2018-12-18 | 朗昭创新控股(深圳)有限公司 | 一种高青光led发光件及照明设备 |
CN209119097U (zh) * | 2018-12-05 | 2019-07-16 | 福建天电光电有限公司 | 一种可调全光谱led封装结构 |
-
2020
- 2020-04-30 CN CN202010364269.3A patent/CN112397630A/zh active Pending
- 2020-06-23 CN CN202021191226.1U patent/CN212725363U/zh active Active
- 2020-07-20 CN CN202010701758.3A patent/CN112397605A/zh active Pending
- 2020-08-07 CN CN202021628300.1U patent/CN212587505U/zh active Active
- 2020-08-10 CN CN202010796460.5A patent/CN112397627B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN112397627A (zh) | 2021-02-23 |
CN112397630A (zh) | 2021-02-23 |
CN112397627B (zh) | 2022-02-08 |
CN112397605A (zh) | 2021-02-23 |
CN212587505U (zh) | 2021-02-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8172433B2 (en) | Optoelectronic component and illumination device | |
EP1952056B1 (en) | Thin and efficient light collimating device | |
TWI418854B (zh) | 透鏡結構 | |
CN212725363U (zh) | 发光装置 | |
CN102741738A (zh) | 光电子半导体器件、照明设备和透镜 | |
KR20110117222A (ko) | 조명 장치 | |
JP2009542017A5 (zh) | ||
US20210404633A1 (en) | Backlight module and display device | |
TWI537523B (zh) | 光學透鏡以及應用該光學透鏡的發光元件 | |
US20140340893A1 (en) | Light-guiding structure and light-emitting device | |
US9316852B2 (en) | Lens with diffusion structure and backlight module incorporating the same | |
JP2011151218A (ja) | 発光装置 | |
EP1936261B1 (en) | Illuminating device | |
JP5555927B2 (ja) | 照明装置 | |
US10955111B2 (en) | Lens and lamp having a lens | |
JP5954663B2 (ja) | 照明器具 | |
US7922367B2 (en) | Optical element and backlight module having the same | |
CN103032774B (zh) | 一种led光源 | |
US10145532B2 (en) | Light emitting device package and backlight unit including the same | |
KR102305232B1 (ko) | 발광 소자 패키지 및 그 패키지를 포함하는 조명 장치 | |
KR102554658B1 (ko) | 렌즈, 렌즈를 포함하는 발광 소자 패키지 및 발광 소자 패키지를 포함하는 조명 장치 | |
CN112303594A (zh) | 一种光学透镜、发光装置及显示器 | |
WO2015011105A1 (en) | A lens for a light source | |
KR101733138B1 (ko) | 반도체 광원 | |
US20240250224A1 (en) | Surface light source device and display device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant |