WO2022226738A1 - 一种发光装置 - Google Patents

一种发光装置 Download PDF

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Publication number
WO2022226738A1
WO2022226738A1 PCT/CN2021/090016 CN2021090016W WO2022226738A1 WO 2022226738 A1 WO2022226738 A1 WO 2022226738A1 CN 2021090016 W CN2021090016 W CN 2021090016W WO 2022226738 A1 WO2022226738 A1 WO 2022226738A1
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WO
WIPO (PCT)
Prior art keywords
light
emitting
resonant cavity
vertical resonant
emitting device
Prior art date
Application number
PCT/CN2021/090016
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English (en)
French (fr)
Inventor
李兴龙
时军朋
Original Assignee
泉州三安半导体科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 泉州三安半导体科技有限公司 filed Critical 泉州三安半导体科技有限公司
Priority to CN202180006394.XA priority Critical patent/CN115529828A/zh
Priority to PCT/CN2021/090016 priority patent/WO2022226738A1/zh
Publication of WO2022226738A1 publication Critical patent/WO2022226738A1/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect

Definitions

  • the invention relates to the technical field of semiconductors, in particular to a packaging structure of a vertical cavity surface emitting laser.
  • infrared LEDs have been widely used in optical communication, security and other fields as a conventional light source technology.
  • people's requirements for the use of light sources have been continuously improved, especially in some special application fields (such as vehicle radar, face recognition and iris recognition), which often require fast response, high purity and directivity. Therefore, the effect of the existing infrared LED obviously cannot match.
  • changing the structure of the lighting device or adding an optical lens can only increase the light intensity and change the light shape, but cannot improve the shortcomings of infrared LEDs such as low response speed, low purity, and short emission distance.
  • 3D projection modules can be used for face recognition, face unlocking and other scenarios, while 3D projection modules usually use vertical resonant cavity surface-emitting laser diodes (Vertical Laser Diodes).
  • Cavity Surface Emitting Laser, VCSEL Cavity Surface Emitting Laser
  • VCSEL Vertical Laser Diodes
  • optical components such as diffusers and diffracters are arranged on the light path of the light source, so that the laser projected by the 3D projection module can achieve better optical effects.
  • the use of traditional vertical cavity surface emitting lasers with optical components such as diffusers and diffracters will lead to a larger overall size of the 3D projection module, which is not conducive to use in small space application scenarios such as mobile phones, and the size of optical components is average. Similar in size to a 3D projection module, a larger area of optical components is required, and the cost of optical components is high, so the packaging cost remains high.
  • the present invention can be implemented without affecting the optical components to diffuse the laser beam emitted by the VCSEL chip to form uniform or arrayed light spots.
  • the following technical solutions are used:
  • a light-emitting device characterized in that it includes:
  • the package substrate has a first surface and a second surface disposed oppositely;
  • the vertical resonant cavity surface-emitting laser diode is disposed on the first surface of the package substrate, the vertical resonant cavity surface-emitting laser diode has a light-emitting surface away from the package substrate, and the light-emitting surface has a first area, the first area is the area where the vertical resonant cavity surface-emitting laser diode emits a laser beam;
  • optical component with an incident surface and an exit surface arranged oppositely, the optical component is arranged above the first region of the vertical resonant cavity surface emitting laser diode so that the light emitting surface of the vertical resonant cavity surface emitting laser diode faces the incident surface of the optical component;
  • the edge of the orthographic projection of the optical component on the second surface of the packaging substrate and the edge of the orthographic projection of the first region of the vertical resonant cavity surface-emitting laser diode on the second surface of the packaging substrate are the smallest
  • the distance is between 0.05mm and 0.8mm.
  • Another aspect of the present invention provides a light-emitting device, comprising:
  • the package substrate has a first surface and a second surface disposed oppositely;
  • m pieces of vertical resonant cavity surface-emitting laser diodes are disposed on the first surface of the packaging substrate, and the m pieces of vertical resonant cavity surface-emitting laser diodes respectively have a light emitting light on the side away from the packaging substrate
  • the light-emitting surfaces respectively have a first area, and the first area is a vertical resonant cavity surface-emitting laser diode emitting laser beam area;
  • an optical component having an incident surface and an exit surface arranged oppositely, the optical component is arranged above the first region of the m vertical resonant cavity surface emitting laser diodes to enable the m vertical resonant cavity surface emitting laser diodes
  • the light-emitting surface of the diode faces the incident surface of the optical component
  • the edge of the orthographic projection of the optical component on the second surface of the package substrate is at least the same as the first region of the one vertical resonant cavity surface-emitting laser diode on the second surface of the package substrate.
  • the minimum edge distance for orthographic projections is between 0.05mm and 0.8mm.
  • Another aspect of the present invention provides a light-emitting device, comprising:
  • the package substrate has a first surface and a second surface disposed oppositely;
  • m pieces of vertical resonant cavity surface-emitting laser diodes are disposed on the first surface of the packaging substrate, and the m pieces of vertical resonant cavity surface-emitting laser diodes respectively have a light emitting light on the side away from the packaging substrate
  • the light-emitting surfaces respectively have a first area, and the first area is a vertical resonant cavity surface-emitting laser diode emitting laser beam area;
  • the m optical components are arranged above the first regions of the m vertical resonant cavity surface-emitting laser diodes so that the The light-emitting surfaces of m vertical resonant cavity surface-emitting laser diodes face the incident surfaces of the m optical components respectively;
  • the edge of the orthographic projection of the m optical components on the second surface of the packaging substrate and the first region of the m vertical resonant cavity surface-emitting laser diodes are on the positive side of the second surface of the packaging substrate
  • the projected edge minimum distance is between 0.05mm and 0.8mm respectively.
  • the light-emitting device provided by the present invention has at least the following beneficial technical effects:
  • the light-emitting device of the present invention includes a package substrate, a vertical resonant cavity surface-emitting laser diode, and an optical component, wherein the optical component is at the edge of the orthographic projection of the second surface of the package substrate and the first area of the vertical resonant cavity surface-emitting laser diode.
  • the minimum distance between the edges of the orthographic projection of the second surface of the package substrate is between 0.05mm and 0.8mm, and even between 0.05mm and 0.5mm.
  • the size of the optical component is reduced to 1/the size of the traditional light-emitting device without affecting the optical component to diffuse the laser beam emitted by the VCSEL chip to form a uniform or arrayed spot. 3-1/5, or even reduced to 1/5-1/9 of the traditional light-emitting device, which greatly reduces the packaging cost.
  • the present invention controls the size of the optical element to minimize the size of the optical element as much as possible, and greatly reduces the packaging cost without affecting the optical component to diffuse the laser beam emitted by the VCSEL chip to form a uniform or arrayed spot. .
  • a flat substrate is used to replace the bowl-shaped substrate, and a package body is used to wrap the optical element on the periphery of the substrate, which can effectively reduce the size of the light-emitting device, facilitate the integration and miniaturization of the light-emitting device, and block moisture and avoid oxidation and peeling. situation occurs.
  • FIG. 1 and 3 are cross-sectional views of a light emitting device according to a first embodiment.
  • FIG. 2 is an orthographic schematic diagram of a part of the structure of the light emitting device 100 according to the first embodiment on the package substrate.
  • FIG. 4 is a cross-sectional view of another embodiment of the light emitting device according to the first embodiment shown in FIG. 1 .
  • FIG. 5 is a cross-sectional view of a light emitting device according to a second embodiment.
  • FIG. 6a is a schematic diagram of an orthographic projection of a part of the structure of the light emitting device 200 according to the second embodiment on the package substrate.
  • FIG. 6b is a schematic orthographic view of another embodiment of the light emitting device 200 according to the second embodiment in which a part of the structure is disposed on a package substrate.
  • FIG. 7 is a cross-sectional view of another embodiment of the light emitting device according to the second embodiment.
  • FIG 8 is a plan view of a light emitting device according to a third embodiment.
  • FIG. 9 is a plan view of the light emitting device according to the third embodiment shown in FIG. 8 with optical components omitted.
  • FIGS. 10 and 11 are cross-sectional views taken along line A1 - A1 ′ of the light emitting device according to the third embodiment shown in FIGS. 8 and 9 .
  • FIG. 12 is an orthographic schematic diagram of a part of the structure of the light emitting device 300 according to the third embodiment on the package substrate.
  • FIG. 13 is a cross-sectional view of another embodiment of the light emitting device according to the third embodiment shown in FIG. 9 .
  • FIG. 14 is a cross-sectional view of another embodiment of the light emitting device according to the third embodiment shown in FIG. 9 .
  • FIG. 1 and 3 are cross-sectional views of the light emitting device 100 according to the first embodiment
  • FIG. 2 is a partially enlarged plan view of the light emitting device 100 according to the first embodiment.
  • the first surface 1101 of the package substrate 110 may be defined by an x-axis and a y-axis, and a normal direction perpendicular to the first surface 1101 of the package substrate 110 may be the z-axis.
  • the horizontal width along the x-axis direction on the surface of the package substrate 110 may be equal to the horizontal width along the y-axis direction, but is not limited thereto.
  • the light emitting device 100 may include a package substrate 110 , a VCSEL chip 120 , an optical member 140 and a glass layer 150 .
  • the package substrate 110 of the present embodiment may include a material having excellent support strength, heat dissipation, insulation and the like.
  • the package substrate 110 may include a material having high thermal conductivity.
  • the package substrate 110 may be made of a material having good heat dissipation properties, so that heat generated from the VCSEL chip 120 may be efficiently discharged to the outside.
  • the package substrate 110 may include an insulating material.
  • the package substrate 110 may include a ceramic material.
  • the package substrate 110 may include low temperature co-fired ceramic (LTCC) or high temperature co-fired ceramic (HTCC).
  • the package substrate 110 may be provided with silicone resin, epoxy resin, thermosetting resin including plastic material, or high heat resistance material.
  • the package substrate 110 may include a metal compound.
  • the package substrate 110 may include a metal oxide having a thermal conductivity of 140 W/mK or more.
  • the package substrate 110 may include aluminum nitride (AlN) or aluminum oxide (Al 2 O 3 ).
  • the package substrate 110 of this embodiment can be used to carry the VCSEL chip 120 and the glass layer 150 .
  • the package substrate 110 includes a main body part 11 and an extension part 12 .
  • the main body portion 11 and the extension portion 12 may be made of the same material and integrally formed.
  • the main body portion 11 and the extension portion 12 may be formed of different materials and may be formed by separate processes.
  • the first surface 1101 of the main body part 11 and the bottom surface of the extension part 12 may be partially adhered to each other by an adhesive member (not shown).
  • the adhesive member may include any one or more of organic materials, epoxy resins, or silicone resins.
  • the main body portion 11 is used to carry the VCSEL chip 120 .
  • the main body portion 11 includes a first surface 1101 and a second surface 1102 which are disposed opposite to each other.
  • the VCSEL chip 120 is disposed on the first surface 1101 .
  • the main body portion 11 includes a first conductive pad 111 and a second conductive pad 112 .
  • the first conductive pads 111 and the second conductive pads 112 may be formed on the first surface 1101 of the main body 11 and spaced apart from each other by means of mold molding, attachment, or electroplating.
  • the first conductive pad 111 and the second conductive pad 112 may include copper, aluminum, nickel, tin, or a combination thereof, but not limited thereto.
  • first conductive pad 111 and the second conductive pad 112 are disposed on the first surface 1101 of the main body portion 11 in FIG. 1 , in some optional embodiments, the first conductive pad 111 And the second conductive pad 112 can also be embedded in the main body 11 and flush with the first surface 1101 of the main body 11 .
  • the present embodiment may include a first pad 115 and a second pad 116 that are provided on the second surface 1102 of the main body portion 11 , spaced apart from each other, and further include a penetrating pad 1101 and a second surface 1102 .
  • the first via hole 113 and the second via hole 114 are used to realize the electrical connection between the first conductive pad 111 and the first pad 115
  • the second via hole 114 is used to realize the electrical connection between the second conductive pad 112 and the second pad 116 .
  • the extension 12 is used to carry the glass layer 150 .
  • the extension portion 12 extends along the first surface 1101 of the main body portion 11 toward the emission direction of the VCSEL chip 120 .
  • the extension 12 includes a top surface and a bottom surface disposed oppositely away from the first surface, and the top surface can be used for adhering the glass layer 150 to each other by an adhesive member (not shown).
  • the extension portion 12 and the main body portion 11 together form a cavity.
  • the VCSEL chip 120 is disposed in the cavity.
  • the VCSEL chip 120 is disposed on the first surface 1101 of the main body portion 11 and is electrically connected to the first conductive pad 111 and the second conductive pad 112 .
  • the VCSEL chip 120 can be disposed on the first conductive pad 111 by silver paste bonding, solder paste bonding, flux bonding, solder bonding or hot pressing eutectic for metal plating at the bottom of the chip.
  • the first wire 117 is electrically connected to the second conductive pad 112 to form a loop.
  • the VCSEL chip 120 can emit light beams upward at the light emitting surface (the surface on the side away from the package substrate).
  • the wavelength of the light beam emitted by the VCSEL chip 120 is between 780 nm and 1200 nm.
  • the glass layer 150 has a third surface 1501 disposed opposite to each other and a fourth surface 1502 on the side away from the package substrate, and the glass layer 150 is disposed on the extension portion 12 .
  • the glass layer 150 is disposed on the top surface of the extension part 12, and the third surface 1501 may be partially adhered to the top surface to each other by an adhesive member (not shown).
  • the adhesive member may be formed of a material having excellent adhesiveness, moisture resistance, insulating properties, and supporting strength.
  • the adhesive member may include any one or more of organic materials, epoxy resins, or silicone resins.
  • the third surface 1501 of the glass layer 150 is provided with an optical component 140 , and specifically, the optical component has an incident surface 1401 and an exit surface 1402 arranged oppositely.
  • the third surface 1501 of the glass layer 150 and the exit surface 1402 of the optical part 140 may be bonded to each other by a transparent bonding member (not shown).
  • the adhesive member may include any one or more of organic materials, epoxy resins, or silicone resins.
  • the optical element 140 is a diffractive optical element 141 .
  • a diffractive microstructure 142 is provided on the incident surface 1401 of the diffractive optical element 141 .
  • the diffractive microstructure 142 can be obtained by means of nano-imprinting or the like to obtain the diffractive optical element 141 , and its surface topography can be divided into random topography and regular topography.
  • the light-emitting surface of the VCSEL chip 120 faces the incident surface 1401 . After the laser beam emitted by the VCSEL chip 120 passes through the diffractive optical element 141 , the diffractive optical element 141 forms the laser beam into a uniform or arrayed spot.
  • the luminous angle changes, which can be effectively adapted to various applications and has strong flexibility. Specifically, the adjustment of the light-emitting angle of the light-emitting device 100 can be effectively realized, and the light-emitting angle of the light-emitting device can be adjusted and changed from 30° to 120°.
  • FIG. 2 is a schematic diagram of an orthographic projection of a part of the structure of the light emitting device 100 according to the first embodiment on the package substrate 110 .
  • an optical component 140 and a VCSEL chip 120 are included, wherein the VCSEL chip 120 may include a first region 121 and a second region 122 .
  • the first area 121 is the area where the VCSEL chip 120 emits the laser beam
  • the second area 122 is the area where the VCSEL chip 120 does not emit the laser beam, which is also called an electrode area.
  • the widths a1 and a2 of the second region 122 may be 0.05 mm to 0.2 mm.
  • a1 and a2 can be the same or different.
  • the widths b1 and b2 of the second region 122 may be 0.05 mm to 0.2 mm. b1 and b2 can be the same or different.
  • the area of the first region 121 accounts for between 50% and 95% of the area of the VCSEL chip 120 , wherein the area of the VCSEL chip 120 refers to the area of the VCSEL chip substrate. If the area ratio of the first area 121 is less than 50%, the area for emitting the laser beam will be too small. If the area ratio of the first region 121 is greater than 95%, the second region 122 will be too small, and the electrode region will not be easy to wire.
  • the first wire 117 is disposed on the second region 122 and is electrically connected to the second conductive pad 112 by wire bonding.
  • the first region 121 of the VCSEL chip 120 may be a regular pattern, such as a square, an ellipse or a circle, or an irregular pattern.
  • the VCSEL chip 120 is divided into a first area 121 and a second area 122 surrounding the first area 121 , and the first area 121 is square.
  • the orthographic projection of the optical component 140 on the second surface 1102 of the package substrate 110 covers the orthographic projection of the first region 121 of the VCSEL chip 120 on the second surface 1102 of the package substrate 110 .
  • the minimum distance c between the edge of the orthographic projection of the optical component 140 on the second surface 1102 of the package substrate 110 and the edge of the orthographic projection of the first region 121 of the VCSEL chip 120 on the second surface 1102 of the package substrate 110 is between 0.05 Between mm and 0.8mm. Therefore, the size of the optical components can be reduced to 1/3 to 1/5 of the conventional size without affecting the optical components 140 to diffuse the laser beams emitted by the VCSEL chips 120 to form uniform or arrayed light spots, which greatly reduces the size of the optical components. The size of the component 140 reduces packaging costs.
  • the edge of the orthographic projection of the optical component 140 on the second surface 1102 of the package substrate 110 and the edge of the orthographic projection of the first region 121 of the VCSEL chip 120 on the second surface 1102 of the package substrate 110 The minimum distance c may be smaller than the width ( a1 , a2 , b1 , b2 ) of the second region 122 of the VCSEL chip 120 .
  • the orthographic projection of the optical component 140 on the second surface 1102 of the package substrate 110 is preferably formed to have an area 1.2 to 3.5 times the orthographic projection of the first region 121 of the VCSEL chip 120 on the second surface 1102 of the package substrate 110 area. Then, without affecting the optical component 140 to diffuse the laser beam emitted by the VCSEL chip 120 to form a uniform or arrayed spot, the size of the optical component can be reduced to 1/3 to 1/5 of the traditional one, effectively reducing the optical size. The area of the component 140 reduces the packaging cost.
  • the distance h between the light-emitting surface of the VCSEL chip 120 and the incident surface 1401 of the optical component 140 is at most 0.5 mm. If the distance h between the light-emitting surface of the VCSEL chip 120 and the incident surface 1401 of the optical component 140 is too large, eg, h is greater than 0.5 mm, the package size will be too large, which is not conducive to the miniaturization of the light-emitting device. Preferably, the distance h between the light-emitting surface of the VCSEL chip 120 and the incident surface 1401 of the optical component 140 is 0.1 mm to 0.5 mm.
  • the distance h between the light-emitting surface of the VCSEL chip 120 and the incident surface 1401 of the optical component 140 is 0.3 mm, so that the laser beam can be uniformly diffused under the action of the optical component, and the packaging process is easier to implement.
  • the VCSEL chip 120 can emit light beams upward at a light emission angle ⁇ of 20° to 40°.
  • the thickness T of the optical member 140 may be 0.2 mm to 0.6 mm in consideration of the emission angle of the light emitting device.
  • the thickness T of the optical member 140 is controlled to be about 0.2 mm or more, so that a sufficient laser emission range can be ensured.
  • the thickness T of the optical member 140 is less than 0.2 mm, there is a concern that it is damaged during the manufacturing process or actual use.
  • the thickness T of the optical member 140 by designing the thickness T of the optical member 140 to be 0.6 mm or less, a compact light emitting device can be realized.
  • the length of the first region 121 of the VCSEL chip 120 in the x direction is R
  • the length of the optical component 140 in the x direction is W
  • the difference between W and R is controlled to be between 0.05mm and 1.5mm.
  • the lengths R and W represent the maximum lengths of the first region 121 of the VCSEL chip 120 and the optical component 140 in the x-direction. Therefore, the size of the optical component can be reduced to 1/3 to 1/5 of the traditional size without affecting the optical component 140 to perform diffusion processing on the laser beam emitted by the VCSEL chip 120 to form a uniform or arrayed spot.
  • the size of the optical component 140 is reduced, and the packaging cost is reduced.
  • the difference between W and R is 0.5 mm, 0.8 mm, and 1.2 mm, which can greatly reduce the packaging cost without affecting the optical performance of the light emitting device 100 .
  • W and R can also be controlled to the following relationship: R+2h ⁇ tan(0.5 ⁇ )+0.6>W>R+2h ⁇ tan(0.5 ⁇ )+0.1.
  • the length R of the first region 121 of the VCSEL chip 120 is 0.8 mm
  • the distance h between the light-emitting surface of the VCSEL chip 120 and the incident surface 1401 of the optical component 140 is 0.3 mm
  • the light-emitting angle ⁇ is 30°
  • the length W of the optical component 140 is between Between 1.06mm and 1.56mm
  • the difference between W and R is between 0.26mm and 0.76mm.
  • FIG. 4 is a cross-sectional view of another embodiment of the light emitting device 100 according to the first embodiment shown in FIG. 1 .
  • a mounting groove 102 recessed into the cavity is formed on the top surface of the extension portion 12 , and the glass layer 150 is at least partially disposed in the mounting groove 102 .
  • the glass layer 150 is partially combined with the mounting groove 102, and the combination method includes gluing, snapping, and the like. Since the top surface is provided with the mounting groove 102 , when the light-emitting device is assembled, the glass layer 150 is in contact with the bottom and side walls of the mounting groove 102 (ie, the side wall of the extension portion 12 ), indicating that the glass layer 150 is installed in the extension portion 12 in place. .
  • the glass layer 150 is disposed in the installation groove 102 . Under the restriction of the sidewall of the installation groove 102 , the glass layer 150 is stably disposed in the cavity, and the height of the light emitting device 100 can also be reduced, which is beneficial to the miniaturization of the package.
  • the second embodiment may adopt the technical features of the first embodiment, and the main features of the first embodiment will be described below.
  • m (m ⁇ 2) VCSEL chips can be set in one light-emitting device to increase the power output of the light-emitting device.
  • the light emitting device 200 may include a package substrate 210 , m VCSEL chips 220 , an optical member 240 and a glass layer 250 .
  • the number of VCSEL chips 220 is m, for example, m is equal to 2, VCSEL chips 220a and 220b.
  • the VCSEL chip 220 a and the VCSEL chip 220 b are disposed on the first surface 2101 of the main body portion 21 .
  • the main body portion 21 includes first conductive pads 211a, 211b and second conductive pads 212a, 212b.
  • the first conductive pads 211a, 211b and the second conductive pads 212a, 212b can be formed on the main body portion 21 by, for example, mold molding, attachment, or electroplating.
  • the first conductive pads 211a, 211b and the second conductive pads 212a, 212b may include copper, aluminum, nickel, tin, or a combination thereof, but not limited thereto. It should be understood that, although in FIG.
  • the first conductive pads 211a, 211b and the second conductive pads 212a, 212b are disposed on the first surface 2101 of the main body portion 21, in some embodiments, the first conductive pads
  • the pads 211 a and 211 b and the second conductive pads 212 a and 212 b can also be embedded in the main body 21 and are flush with the first surface 2101 of the main body 21 .
  • the present embodiment also includes the first pads 215a, 215b and the second pads 216a, 216b that are provided on the second surface 2102 of the main body portion 21, and are spaced apart from each other, and also include through the first surface 2101 and the first pads 2101 and 216b.
  • the first via hole 213a is used to realize the electrical connection between the first conductive pad 211a and the first pad 215a
  • the second via hole 214a is used to realize the electrical connection between the second conductive pad 212a and the second pad 216a
  • a via hole 213b is used to realize the electrical connection between the first conductive pad 211b and the first pad 215b
  • the second via hole 214b is used to realize the electrical connection between the second conductive pad 212b and the second pad 216b.
  • the light emitting device 200 further includes first wires 217a, 217b.
  • the VCSEL chip 220a is electrically connected to the first conductive pad 211a, and the first wire 217a is electrically connected to the VCSEL chip 220a and the second conductive pad 212a; the VCSEL chip 220b is electrically connected to the first conductive pad 211b, and the first wire 217b is electrically connected The VCSEL chip 220b is electrically connected to the second conductive pad 212b.
  • the VCSEL chip 220a can be disposed on the first conductive pad 211a by silver glue bonding, solder paste bonding, flux bonding, solder bonding or hot pressing eutectic of metal plating at the bottom of the chip.
  • the second region 222a is electrically connected to the second conductive pad 212a through the first wire 217a by wire bonding to form a loop; similarly, the VCSEL chip 220b can be bonded by silver paste, solder paste, and flux.
  • the die-bonding, solder-bonding or metal plating on the bottom of the chip is thermally pressed eutectic so as to be disposed on the first conductive pad 211b, and the second region 222b of the VCSEL chip 220b is electrically connected through the first wire 217b by wire bonding to the second conductive pad 212b to form a loop;
  • the light emitting device 200 includes a glass layer 250 and an optical member 240 .
  • the glass layer 250 has a third surface 2501 disposed opposite to each other and a fourth surface 2502 on the side away from the package substrate.
  • the third surface 2501 of the glass layer 250 is provided with an optical component 240 .
  • the optical component 240 has The incident surface 2401 and the exit surface 2402 are oppositely arranged.
  • the third surface 2501 of the glass layer 250 and the exit surface 2402 of the optical part 240 may be bonded to each other by a transparent bonding member (not shown).
  • the adhesive member may include any one or more of organic materials, epoxy resins, or silicone resins.
  • the light-emitting surfaces of the VCSEL chip 220a and the VCSEL chip 220b face the incident surface 2401, and the optical component 240 forms the laser beam emitted by the VCSEL chip 220a and the VCSEL chip 220b into a uniform or arrayed light spot.
  • FIG. 6a and FIG. 6b are schematic diagrams of orthographic projections of a part of the structure of the light emitting device 200 according to the second embodiment on the package substrate.
  • the optical component 240 in order to enable the optical component 240 to cover the laser beam divergence range of the VCSEL chip 220a and the VCSEL chip 220b, so that the laser beams emitted by the VCSEL chip 220a and the VCSEL chip 220b can be diffused to form uniform or arrayed light spots,
  • the optical component 240 can be minimized and the packaging cost can be reduced.
  • the orthographic projection of the optical component 240 on the second surface 2102 of the packaging substrate 210 covers the first area 221a of the VCSEL chip 220a and the first area 221b of the VCSEL chip 220b on the packaging substrate.
  • Orthographic projection of second surface 2102 of 210 More preferably, the edge of the orthographic projection of the optical component 240 on the second surface 2102 of the package substrate 210 is in contact with the first region 221a of the VCSEL chip 220a and/or the first region 221b of the VCSEL chip 220b on the package substrate 210 on the package substrate 210 .
  • the edge minimum distance c of the orthographic projection of the second surface 2102 is between 0.05 mm and 0.8 mm.
  • the spacing between adjacent VCSEL chips is d, and the spacing d is preferably 0.2 mm to 1 mm.
  • the spacing d between the VCSEL chips 220a and 220b is 0.2 mm.
  • m (m ⁇ 2) optical components are respectively disposed above m VCSEL chips in order to meet user requirements for light field distribution at different angles of the light emitting device.
  • m (m ⁇ 2) optical components respectively form uniform or arrayed light spots from the laser beams emitted by m VCSEL chips.
  • the number of VCSEL chips is m, for example, m is equal to 2, VCSEL chips 220a, VCSEL chips 220b.
  • m is equal to 2
  • VCSEL chips 220a, VCSEL chips 220b In order to enable the optical component 240a and the optical component 240b to cover the divergence ranges of the laser beams of the VCSEL chip 220a and the VCSEL chip 220b respectively, so that the laser beams emitted by the VCSEL chip 220a and the VCSEL chip 220b can be diffused to form uniform or arrayed light spots, In addition, the optical component 240a and the optical component 240b can be minimized, and the packaging cost can be reduced. Referring to FIG.
  • the orthographic projection of the optical component 240a on the second surface 2102 of the packaging substrate 210 covers the first area 221a of the VCSEL chip 220a on the packaging substrate 210 orthographic projection of the second surface 2102 of . More preferably, the minimum distance c between the edge of the orthographic projection of the optical component 240a on the second surface 2102 of the package substrate 210 and the edge of the orthographic projection of the first region 221a of the VCSEL chip 220a on the second surface 2102 of the package substrate 210 is between 0.05 Between mm and 0.8mm.
  • the optical properties of the optical component 140a and the optical component 140b may be different.
  • the nano-imprint structures of the optical component 140a and the optical component 140b may be different, so that the diffracting effects on the laser light are different, so as to achieve different light emission angles.
  • the optical component 140a can achieve 60*45 degrees with the VCSEL chip
  • the optical component 140b can achieve 75*60 degrees with the VCSEL chip.
  • the third embodiment may adopt the technical features of the second embodiment, and the main features of the third embodiment will be described below.
  • FIG. 8 is a plan view of the light emitting device 300 according to the third embodiment
  • FIG. 9 is a plan view of the light emitting device 300 according to the first embodiment shown in FIG. 8 omitting the optical member 340
  • FIG. FIG. 9 shows a cross-sectional view of the light emitting device 300 of the third embodiment taken along the line A1-A1'.
  • the light emitting device 300 may include a package substrate 310 , an optical part 340 and a package body 350 .
  • the ground may be defined by the x-axis and the y-axis, and the normal direction perpendicular to the ground may be the z-axis.
  • the horizontal width along the x-axis direction on the surface of the package substrate 310 may be equal to the horizontal width along the y-axis direction, but is not limited thereto.
  • the light emitting device 300 includes: a package substrate 310 having a first surface 3101 and a second surface 3102 disposed oppositely; a VCSEL chip 320 disposed on the first surface 3101 of the package substrate 310 Optical component 340, having oppositely arranged incident surface 3401 and exit surface 3402, arranged above VCSEL chip 320 so that VCSEL chip 320 faces incident surface 3401 of optical component 340; and package body 350, formed on package substrate 310, wrapping VCSEL The chip 320 and the optical component 340 are exposed to the exit surface 3402 of the optical component 340 .
  • the laser light emitted from the VCSEL chip 320 is diffused by the optical component 340, so that the laser beam forms a uniform or arrayed light spot.
  • the VCSEL chip 320 may include a first region 321 and a second region 322 .
  • the first area 321 is the area where the VCSEL chip 220 emits the laser beam
  • the second area 322 is the area where the VCSEL chip 320 does not emit the laser beam, which is also called an electrode area.
  • the VCSEL chip 320 is divided into a first area 321 and a second area 322 surrounding the first area 321 .
  • the widths a1 and a2 of the second region 322 may be 0.05 mm to 0.2 mm.
  • a1 and a2 can be the same or different.
  • the widths b1 and b2 of the second region 322 may be 0.05 mm to 0.2 mm. b1 and b2 can be the same or different.
  • the area of the first region 321 accounts for 50% to 95% of the area of the VCSEL chip 320 , wherein the area of the VCSEL chip 320 refers to the area of the VCSEL chip substrate. If the area ratio of the first area 321 is less than 50%, the area for emitting the laser beam will be too small. If the area ratio of the first area 321 is greater than 95%, the second area 322 will be too small, and the electrode area will not be easy to wire.
  • the first region 321 of the VCSEL chip 320 may be a regular pattern, such as a rectangle, a square or a circle, or an irregular pattern.
  • the package substrate 310 may include a material with excellent support strength, heat dissipation, insulation and the like.
  • the package substrate 310 may include a material having high thermal conductivity.
  • the package substrate 310 may be made of a material having good heat dissipation properties, so that heat generated from the VCSEL chip 320 may be efficiently discharged to the outside.
  • the package substrate 310 may include an insulating material.
  • the package substrate 310 may include a ceramic material.
  • the package substrate 310 may include a low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC).
  • the package substrate may be provided with silicone resin, epoxy resin, thermosetting resin including plastic material, or high heat resistance material.
  • the light emitting device 300 may include a first conductive pad 311 and a second conductive pad 312 .
  • the first conductive pad 311 and the second conductive pad 312 may be formed on the first surface 3101 of the package substrate 310 and spaced apart from each other by means of mold molding, attachment, or electroplating.
  • the first conductive pad 311 and the second conductive pad 312 may include copper, aluminum, nickel, tin, or a combination of the foregoing, but not limited thereto. It should be understood that although the first conductive pad 311 and the second conductive pad 312 are disposed on the first surface 3101 of the package substrate 310 in FIG. 10 , in some embodiments, the first conductive pad 311 and the second conductive pad 312 The two conductive pads 312 can also be embedded in the package substrate 310 and are flush with the first surface 3101 of the package substrate 310 .
  • the VCSEL chip 320 is disposed on the first surface 3101 of the package substrate 310 and is electrically connected to the first conductive pad 311 and the second conductive pad 312 .
  • the VCSEL chip 320 can be disposed on the first conductive pad 311 by silver paste bonding, solder paste bonding, flux bonding, solder bonding or hot pressing eutectic of metal plating at the bottom of the chip.
  • the first wire 317 is electrically connected to the second conductive pad 312 to form a loop.
  • the VCSEL chip 320 can emit light beams upward at the light emitting surface (the surface on the side away from the package substrate). For example, the VCSEL chip 320 can emit light beams upward with an emission angle ⁇ of 20° to 40°.
  • the wavelength of the laser beam emitted by the VCSEL chip 320 is between 780 nm and 1200 nm.
  • the light emitting device 300 may include a spacer structure 330 disposed on the second region 322 of the VCSEL chip 320 .
  • the spacer structure 330 has a top surface 3301 and a bottom surface 3302 disposed oppositely, and the bottom surface 3302 of the spacer structure 330 and the second region 322 of the light emitting surface of the VCSEL chip 220 are adhered to each other by an adhesive member (not shown).
  • the adhesive member may include any one or more of organic materials, epoxy resins, or silicone resins.
  • the spacer structure 330 needs to avoid the first wires 317 , so when the spacer structure 330 is fabricated, an escape area 332 should be provided in the contact area between the first wires 317 and the spacer structure 330 .
  • the top-view outline of the spacer structure 330 is "hollow rectangle" (or "dam type"), but the invention is not limited to this. Referring to FIG. 11 , the height h of the spacer structure 330 is at most 0.5 mm. If the height h of the spacer structure 330 is too large, eg, greater than 0.5 mm, the package size will be too large, which is not conducive to the miniaturization of the light emitting device 300 .
  • the height h of the spacer structure 330 is 0.1 mm to 0.5 mm.
  • the height h of the spacer structure 330 is 0.3 mm, so that the light can be uniformly diffused under the action of the optical components, and the packaging process is easier to implement.
  • the optical component 340 is disposed on the spacer structure 330 .
  • the optical component 340 has an incident surface 3401 and an exit surface 3402 disposed opposite to each other.
  • the light emitting surface of the VCSEL chip 340 faces the incident surface 3401 of the optical component 340 .
  • the incident surface 3401 of the optical part 340 and the top surface 3301 of the spacer structure 330 may be partially adhered to each other by an adhesive member (not shown).
  • the adhesive member may be formed of a material having excellent adhesiveness, moisture resistance, insulating properties, and supporting strength.
  • the adhesive member may include any one or more of organic materials, epoxy resins, or silicone resins.
  • the optical element 340 is a diffractive optical element 341 .
  • a diffractive microstructure 342 is provided on the incident surface 3401 of the diffractive optical element 341 .
  • the diffractive microstructure 342 can be obtained by means of nano-imprinting or the like to obtain the diffractive optical element 341, and the surface topography thereof can be divided into random topography and regular topography.
  • the light-emitting surface of the VCSEL chip 320 faces the incident surface 3401 . After the laser beam emitted by the VCSEL chip 320 passes through the diffractive microstructure 342 , the diffractive microstructure 342 forms the laser beam into a uniform or arrayed spot.
  • the size of the optical component 340 is generally similar to that of the light-emitting device, so a larger area of the optical component 340 is required, and the cost of the optical component 340 is high, so the packaging cost Stay high.
  • the light-emitting device 300 disclosed herein without affecting the optical component 340 to diffuse the laser beam emitted by the VCSEL chip to form uniform or arrayed light spots, refer to FIG.
  • the orthographic projection of the optical component 340 on the second surface 3102 of the package substrate 310 covers the first surface of the VCSEL chip 320 An orthographic projection of an area 321 on the second surface 3102 of the package substrate 310 . More preferably, the minimum distance c between the edge of the orthographic projection of the optical component 340 on the second surface 3102 of the package substrate 310 and the edge of the orthographic projection of the first region 321 of the VCSEL chip 320 on the second surface 3102 of the package substrate 310 is between 0.05 mm to 0.5mm.
  • the size of the optical component can be reduced to 1/5 to 1/9 of the traditional one, which greatly reduces the size of the optical component.
  • the size of component 340 reduces packaging costs.
  • the size of the light-emitting device can be effectively reduced, which facilitates the integration and miniaturization of the light-emitting device.
  • the conventional package size can be reduced from 3.5mm*2.8mm to 1.6*2.0mm, and it can also block moisture and avoid oxidation and peeling.
  • the orthographic projection of the optical component 340 on the second surface 3102 of the package substrate 310 is preferably formed to have an area 1.2 to 2.5 times the orthographic projection of the first region 321 of the VCSEL chip 320 on the second surface 3102 of the package substrate 310 area. Then, without affecting the optical component 340 to diffuse the laser beam emitted by the VCSEL chip 320 to form a uniform or arrayed spot, the size of the optical component can be reduced to 1/5 to 1/9 of the traditional one, effectively reducing the optical size. The area of the component 340 reduces the packaging cost.
  • the thickness T of the optical member 340 may be 0.2 mm to 0.6 mm.
  • the thickness T of the optical member 340 is controlled to be about 0.2 mm or more, so that a sufficient laser emission range can be ensured.
  • the thickness T of the optical member 340 is less than 0.2 mm, there is a concern that it is damaged during the manufacturing process or actual use.
  • the thickness T of the optical member 340 is 0.6 mm or less, a compact light emitting device can be realized.
  • the length of the first region 321 of the VCSEL chip 320 in the x direction is R
  • the length of the optical component 340 in the x direction is W
  • the difference between W and R is controlled to be between 0.05mm and 1mm.
  • the lengths R and W represent the maximum lengths of the first region 321 of the VCSEL chip 320 and the optical component 340 in the x-direction. Therefore, the size of the optical component 340 can be greatly reduced and the packaging cost can be greatly reduced without affecting the optical component 340 to diffuse the laser beam emitted by the VCSEL chip 320 to form a uniform or arrayed light spot.
  • the difference between W and R is 0.5 mm, 0.8 mm, and 1.2 mm, which can greatly reduce the packaging cost without affecting the optical performance of the light emitting device 300 .
  • W and R can also be controlled to the following relationship: R+2h ⁇ tan(0.5 ⁇ )+0.6>W>R+2h ⁇ tan(0.5 ⁇ )+0.1.
  • the length R of the first region 321 of the VCSEL chip 320 is 0.8 mm
  • the distance h between the light-emitting surface of the VCSEL chip 320 and the incident surface 3401 of the optical component 340 is 0.3 mm
  • the light-emitting angle ⁇ is 30°
  • the length W of the optical component 340 is between Between 1.06mm and 1.56mm
  • the difference between W and R is between 0.26mm and 0.76mm.
  • the light-emitting angle changes, which can be effectively adapted to various applications and has strong flexibility. Specifically, the adjustment of the light-emitting angle of the light-emitting device 300 can be effectively realized, and the light-emitting angle of the light-emitting device can be adjusted and changed from 30° to 120°.
  • the package body 350 is formed on the package substrate 310 , wraps the VCSEL chip 320 , the spacer structure 330 and the sidewall of the optical component 340 , and exposes the exit surface 3402 of the optical component 340 .
  • the package body 350 can block moisture and avoid oxidation of the first conductive pads 311 , the second conductive pads 312 , and the first wires 317 .
  • the package body 350 can also protect the bonding between the VCSEL chip 320 and the first conductive pad 311, and the bonding between the first wire 317 and the VCSEL chip 320 or the second conductive pad 312, so as to avoid the occurrence of peeling .
  • the package body 350 includes silicone resin, epoxy resin or acrylic resin, but not limited thereto.
  • the spacer structure 330 is disposed on the light-emitting surface of the VCSEL chip 320 , and the spacer structure 330 is bonded to the light-emitting surface of the VCSEL chip 320 by an adhesive member (not shown), and the adhesive member 331 is Transparent materials, such as any one or more of transparent organic materials, transparent epoxy resins, or transparent silicone resins.
  • an air gap 360 exists between the spacer structure 330 and the optical component 340 .
  • the surface of the spacer structure 330 away from the packaging substrate 310 is a concave structure, and accordingly, the spacer structure 330 and the optical component 340 can define an air gap 360, so that the optical path has a medium refractive index difference, which can effectively improve the light emission The uniformity of the light output of the device.
  • the optical component 340 includes an incident surface 3401 and an exit surface 3401 arranged opposite to each other, and the incident surface 3401 of the optical component 340 is directly bonded to the VCSEL chip 320 through an adhesive member (not shown).
  • the adhesive member is a transparent material, such as any one or more of transparent organic material, transparent epoxy resin or transparent silicone resin.
  • the optical component 340 is a diffractive optical element 341 .
  • a diffractive microstructure 342 is provided on the exit surface 3402 of the diffractive optical element 341 .
  • the laser beam emitted by the VCSEL chip 320 passes through the diffractive microstructure 342 of the diffractive optical element 341 and enters the external environment to form a uniform or arrayed light spot. Since the diffractive optical element 341 is not directly disposed above the VCSEL chip 320 through the spacer structure, the size of the light emitting device 300 can be further reduced, which is beneficial to the miniaturization of the package.
  • the light-emitting device provided by the present invention has at least the following beneficial technical effects:
  • the light-emitting device of the present invention includes a package substrate, a vertical resonant cavity surface-emitting laser diode, and an optical component, wherein the optical component is at the edge of the orthographic projection of the second surface of the package substrate and the first area of the vertical resonant cavity surface-emitting laser diode.
  • the minimum distance between the edges of the orthographic projection of the second surface of the package substrate is between 0.05mm and 0.8mm, and even between 0.05mm and 0.5mm.
  • the size of the optical component is reduced to 1/the size of the traditional light-emitting device without affecting the optical component to diffuse the laser beam emitted by the VCSEL chip to form a uniform or arrayed spot. 3-1/5, or even reduced to 1/5-1/9 of the traditional light-emitting device, which greatly reduces the packaging cost.
  • the present invention controls the size of the optical element to minimize the size of the optical element as much as possible, and greatly reduces the packaging cost without affecting the optical component to diffuse the laser beam emitted by the VCSEL chip to form a uniform or arrayed spot. .
  • a flat substrate is used to replace the bowl-shaped substrate, and a package body is used to wrap the optical element on the periphery of the substrate, which can effectively reduce the size of the light-emitting device, facilitate the integration and miniaturization of the light-emitting device, and block moisture and avoid oxidation and peeling. situation occurs.

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Abstract

一种发光装置（100），包括：封装基板（110），封装基板（110）具有相对设置的第一表面（1101）和第二表面（1102）；垂直共振腔面射型激光二极管（120），设置于封装基板（110）的第一表面（1101）上，垂直共振腔面射型激光二极管（120）具有一远离封装基板（110）一侧的发光面，发光面具有一第一区域（121），第一区域（121）为垂直共振腔面射型激光二极管（120）发射激光束区域；光学部件（140），具有相对设置的入射面（1401）和出射面（1402），光学部件（140）设置于垂直共振腔面射型激光二极管（120）的第一区域（121）的上方以使垂直共振腔面射型激光二极管（120）发光面朝向光学部件（140）的入射面（1401）；其中，光学部件（140）在封装基板（110）的第二表面（1102）的正投影的边缘与垂直共振腔面射型激光二极管（120）的第一区域（121）在封装基板（110）的第二表面（1102）的正投影的边缘最小距离介于0.05mm至0.8mm之间，减小了光学部件（140）的尺寸，降低了封装成本。

Description

一种发光装置 技术领域
本发明涉及半导体技术领域，尤其是指一种垂直腔面发射激光器封装结构。
 背景技术
目前，红外LED作为常规的光源技术已被广泛应用于光通讯、安防等领域。但是，由于新技术的形成，使得人们对光源的使用要求不断提高，尤其在一些特殊的应用领域(如车载雷达、人脸识别及虹膜识别)，往往需要采用响应速度快、纯度高、指向性强、照射距离远的光源，因此，现有的红外LED的效果明显匹配不了。而通过更改照明器件的结构或者增加光学透镜也只能增加出光强度和改变光形，却无法改善红外LED响应速度低、纯度低、发射距离近等缺点。
3D投影模组可以用于人脸识别、人脸解锁等场景，而3D投影模组通常采用垂直共振腔面射型激光二极管(Vertical Cavity Surface Emitting Laser，VCSEL)作为光源，并在光源的光路上设置扩散器、衍射器等光学部件，以使3D投影模组投射的激光实现更好的光学效果。然而，传统垂直腔面发射激光器配合扩散器、衍射器等光学部件使用，将会导致3D投影模组的整体尺寸较大，不利于在手机等小空间应用场景中使用，并且光学部件的尺寸一般与3D投影模组的尺寸相近，需要较大面积的光学部件，而光学部件的成本高昂，因此封装成本居高不下。
 技术解决方案
相较于上述先前技术所遇到的问题，在此揭露的发光装置中，在不影响光学部件对VCSEL芯片发射出的激光束进行扩散处理形成均匀或者阵列式的光斑的情况下，本发明实施例采用以下技术方案：
一种发光装置，其特征在于，包括：
封装基板，所述封装基板具有相对设置的第一表面和第二表面；
垂直共振腔面射型激光二极管，设置于封装基板的第一表面上，所述垂直共振腔面射型激光二极管具有一远离封装基板一侧的发光面，所述发光面具有一第一区域，所述第一区域为所述垂直共振腔面射型激光二极管发射激光束区域；
光学部件，具有相对设置的入射面和出射面，所述光学部件设置于所述垂直共振腔面射型激光二极管的第一区域的上方以使所述垂直共振腔面射型激光二极管发光面朝向光学部件的入射面；
其中，所述光学部件在所述封装基板的第二表面的正投影的边缘与所述垂直共振腔面射型激光二极管的第一区域在所述封装基板的第二表面的正投影的边缘最小距离介于0.05mm至0.8mm之间。
本发明另一方面又提供了一种发光装置，包括：
封装基板，所述封装基板具有相对设置的第一表面和第二表面；
m颗垂直共振腔面射型激光二极管（m≥2），设置于所述封装基板的第一表面上，所述m颗垂直共振腔面射型激光二极管分别具有一远离封装基板一侧的发光面，所述发光面分别具有一第一区域，所述第一区域为垂直共振腔面射型激光二极管发射激光束区域；
光学部件，具有相对设置的入射面和出射面，所述光学部件设置于所述m颗垂直共振腔面射型激光二极管的第一区域的上方以使所述m颗垂直共振腔面射型激光二极管发光面朝向所述光学部件的入射面；
其中，且所述光学部件在所述封装基板的第二表面的正投影的边缘至少与其中所述一颗垂直共振腔面射型激光二极管的第一区域在所述封装基板的第二表面的正投影的边缘最小距离介于0.05mm至0.8mm之间。
本发明另一方面又提供了一种发光装置，包括：
封装基板，所述封装基板具有相对设置的第一表面和第二表面；
m颗垂直共振腔面射型激光二极管（m≥2），设置于所述封装基板的第一表面上，所述m颗垂直共振腔面射型激光二极管分别具有一远离封装基板一侧的发光面，所述发光面分别具有一第一区域，所述第一区域为垂直共振腔面射型激光二极管发射激光束区域；
m个光学部件（m≥2），具有相对设置的入射面和出射面，所述m个光学部件设置于所述m颗垂直共振腔面射型激光二极管的第一区域的上方以使所述m颗垂直共振腔面射型激光二极管发光面分别朝向所述m个光学部件的入射面；
其中，所述m个光学部件在所述封装基板的第二表面的正投影的边缘与所述m颗垂直共振腔面射型激光二极管的第一区域在所述封装基板的第二表面的正投影的边缘最小距离分别介于0.05mm至0.8mm之间。
 有益效果
如上所述，本发明提供的发光装置，至少具备如下有益技术效果：
本发明的发光装置包括封装基板、垂直共振腔面射型激光二极管以及光学部件，其中，光学部件在封装基板的第二表面的正投影的边缘与垂直共振腔面射型激光二极管的第一区域在封装基板的第二表面的正投影的边缘最小距离介于0.05mm至0.8mm之间，甚至于介于0.05mm至0.5mm之间。相对于现有的发光装置来说，在不影响光学部件对VCSEL芯片发射出的激光束进行扩散处理形成均匀或者阵列式的光斑的情况下，将光学部件的尺寸缩小到传统发光装置的1/3-1/5，甚至于缩小到传统发光装置的1/5-1/9，极大降低了封装成本。
本发明通过在不影响光学部件对VCSEL芯片发射出的激光束进行扩散处理形成均匀或者阵列式的光斑的情况下，控制光学元件的尺寸，使光学元件的尺寸尽可能最小化，大大降低封装成本。
本发明还通过采用平面基板替代碗杯型基板，在基板的外周采用封装体包裹光学元件，可有效地缩小发光装置的尺寸便于发光装置集成化和小型化，并阻隔水气及避免氧化及剥离情况的发生。
 附图说明
图1和图3是根据第一实施例的发光装置的剖视图。
图2是根据第一实施例的发光装置100中的部分结构于封装基板上的正投影示意图。
图4是根据在图1中示出的第一实施例的发光装置的另一实施例的剖视图。
图5是根据第二实施例的发光装置的剖视图。
图6a是根据第二实施例的发光装置200中的部分结构于封装基板上的正投影示意图。
图6b是根据第二实施例的发光装置200中的部分结构于封装基板上的另一实施例的正投影示意图。
图7是根据第二实施例的发光装置的另一实施例的剖视图。
图8是根据第三实施例的发光装置的平面图。
图9是在图8中示出的根据第三实施例的发光装置省略了光学部件的俯视图。
图10和图11是是沿着根据在图8和图9中示出的第三实施例的发光装置的线A1-A1'截取的剖视图。
图12是根据第三实施例的发光装置300中的部分结构于封装基板上的正投影示意图。
图13是根据在图9中示出的第三实施例的发光装置的另一实施例的剖视图。
图14是根据在图9中示出的第三实施例的发光装置的另一实施例的剖视图。
图示说明：
100、200、300：发光装置；121、221a、221b、321：第一区域；110、210、310：封装基板；122、222a、222b、322：第二区域；120、220、220a、220b、320：VCSEL芯片；102：安装槽；140、141、240、241、240a、240b、340、341：光学部件；150、250：玻璃层；117、217a、217b 、317：第一导线；11、21：主体部；142、242、342：衍射微结构；12、22：延伸部；332：让位区；350：封装体；330：间隔结构；1101、2101、3101：第一表面；1401、2401、3401：入射面；1102、2102、3102：第二表面；1402、2402、3402：出射面；111、211a、211b 、311：第一导电垫；1501、2501：第三表面；112、212a、212b 、312：第二导电垫；1502、2502：第四表面；113、213a、213b 、313：第一导通孔；3301：间隔结构的顶面；114、214a、214b 、314：第二导通孔；3302：间隔结构的底面；115、215a、215b、315：第一焊盘；116、216a、216b、316：第二焊盘；360：空气间隔。
 本发明的实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明作进一步地详细描述。仅此声明，本发明在文中出现或即将出现的上、下、左、右、前、后、内、外等方位用词，仅以本发明的附图为基准，其并不是对本发明的具体限定。
第一实施例
图1和图3是根据第一实施例的发光装置100的剖视图，图2是根据第一实施例的发光装置100中的局部放大俯视图。
在本实施例的附图中，封装基板110第一表面1101可由x轴和y轴限定，并且垂直于封装基板110第一表面1101的法线方向可以是z轴。在本实施例中，封装基板110在表面上沿x轴方向的水平宽度可以等于沿y轴方向的水平宽度，但不限于此。
参照图1，根据第一实施例的发光装置100可包括封装基板110、VCSEL芯片120、光学部件140和玻璃层150。
本实施例的封装基板110可包括具有优秀的支撑强度、散热性、绝缘性等的材料。封装基板110可包括具有高导热率的材料。此外，封装基板110可以由具有良好散热性质的材料制成，使得从VCSEL芯片120产生的热可被有效地排放到外部。在可选实施例中，封装基板110可包括绝缘材料。例如，封装基板110可包括陶瓷材料。封装基板110可包括低温共烧陶瓷(LTCC)或高温共烧陶瓷(HTCC)。在另一可选实施例中，封装基板110可以设置有硅树脂、环氧树脂、包括塑料材料的热固性树脂或高耐热性材料。在另一可选实施例中，封装基板110可包括金属化合物。封装基板110可包括具有140W/mK或更大导热率的金属氧化物。例如，封装基板110可包括氮化铝(AlN)或氧化铝(Al 2O 3)。
本实施例的封装基板110可用于承载VCSEL芯片120和玻璃层150。具体地，封装基板110包括主体部11和延伸部12。主体部11和延伸部12可以由相同的材料制成并且一体地形成。或者，主体部11和延伸部12可以由不同的材料形成并且可以通过单独的工艺形成。在这种情况下，主体部11的第一表面1101可以部分和延伸部12的底表面通过粘合构件(未示出)彼此粘合。例如，粘合构件可包括有机材料、环氧树脂或硅树脂中的任何一种或多种。
主体部11用于承载VCSEL芯片120。主体部11包括相对设置的第一表面1101和第二表面1102。VCSEL芯片120设置在第一表面1101上。主体部11包括第一导电垫111和第二导电垫112。第一导电垫111和第二导电垫112可通过模具成型、贴附或电镀等方式，形成在主体部11第一表面上1101且彼此间隔开。在一些实施例中，第一导电垫111和第二导电垫112可包括铜、铝、镍、锡或前述的组合，但不以此为限。应理解的是，虽然在图1中，第一导电垫111及第二导电垫112是设置于主体部11的第一表面1101上，但在某些可选实施例中，第一导电垫111和第二导电垫112亦可嵌置于主体部11中，并与主体部11的第一表面1101齐平。
此外，本实施例中可包括被设置在主体部11的第二表面1102，彼此间隔开的第一焊盘115和第二焊盘116，并且还包括贯通第一表面1101和第二表面1102的第一导通孔113和第二导通孔114。该第一导通孔113用于实现第一导电垫111与第一焊盘115的电连接，第二导通孔114用于实现第二导电垫112与第二焊盘116的电连接。
延伸部12用于承载玻璃层150。延伸部12沿主体部11的第一表面1101朝向VCSEL芯片120的发射方向延伸。延伸部12包括相对设置的远离第一表面的顶面和底面，顶面可以用于与玻璃层150通过粘合构件(未示出)彼此粘合。延伸部12与主体部11共同形成空腔。VCSEL芯片120设置在空腔内。
在本实施例中，VCSEL芯片120设置于主体部11第一表面1101上，并与第一导电垫111和第二导电垫112电性连接。具体地，如图1所示，VCSEL芯片120可通过银胶固晶、锡膏固晶、助焊剂固晶、焊料固晶或芯片底部金属镀层热压共晶从而设置于第一导电垫111上，通过打线接合(wire bonding)方式，第一导线117电性连接至第二导电垫112，以形成回路。
VCSEL芯片120能够在发光面（远离封装基板一侧的表面）处向上方发射光束。此外，VCSEL芯片120发射光束的波长介于780nm至1200nm之间。
参照图1，在本实施例中，玻璃层150具有相对设置的第三表面1501和远离封装基板一侧的第四表面1502，玻璃层150设置在延伸部12上。具体地，玻璃层150设置在延伸部12的顶面上，第三表面1501可以部分与顶面通过粘合构件（未示出）彼此粘合。粘合构件可以由具有优秀的粘合性、耐湿性、绝缘性和支撑强度的材料形成。例如，粘合构件可包括有机材料、环氧树脂或硅树脂中的任何一种或多种。
本实施例中，玻璃层150的第三表面1501设有光学部件140，具体地，光学部件具有相对设置的入射面1401和出射面1402。玻璃层150的第三表面1501和光学部件140的出射面1402可以通过透明的粘合构件 (未示出)彼此粘合。例如，粘合构件可包括有机材料、环氧树脂或硅树脂中的任何一种或多种。在一个实施例中，光学元件140为衍射光学元件141。衍射光学元件141的入射面1401上设置有衍射微结构142。在可选的实施例中，衍射微结构142可以采用纳米压印等方式以获得所述衍射光学元件141，其表面形貌可分为随机形貌、规则形貌。VCSEL芯片120的发光面朝向入射面1401，VCSEL芯片120发射的激光束经过衍射光学元件141后，经衍射光学元件141将激光束形成均匀或者阵列式的光斑。
VCSEL芯片120发射的激光束经光学部件140扩散处理后，发光角度产生变化，可有效地适应多种应用，灵活性强。具体地，可有效地实现发光装置100发光角度的调节，实现发光装置发光角度从30°至120°可调变化。
图2是根据第一实施例的发光装置100中的部分结构于封装基板110上的正投影示意图。参照图2，包括光学部件140和VCSEL芯片120，其中VCSEL芯片120可包括第一区域121和第二区域122。第一区域121为VCSEL芯片120发射激光束的区域，第二区域122为VCSEL芯片120不发射激光束的区域，也称作为电极区。沿x轴方向，第二区域122的宽度a1和a2可以为0.05mm至0.2mm。a1和a2可以是相同的，也可以是不同的。沿y轴方向，第二区域122的宽度b1和b2可以为0.05mm至0.2mm。b1和b2可以是相同的，也可以是不同的。第一区域121的面积占VCSEL芯片120面积的50%至95%之间，其中VCSEL芯片120面积指VCSEL芯片衬底的面积。若第一区域121面积占比小于50%，则会导致发射激光束的区域过小。若第一区域121面积占比大于95%，则会导致第二区域122过小，电极区不易打线。如上所述，第一导线117设置于第二区域122上，通过打线接合(wire bonding)方式与第二导电垫112电性连接。VCSEL芯片120的第一区域121可以为规则图形，例如方形、椭圆形或圆形，也可以为不规则图形。在本实施例中，参照图2，VCSEL芯片120分为第一区域121和环绕第一区域121的第二区域122,第一区域121为方形。同时，光学部件140在封装基板110的第二表面1102的正投影覆盖VCSEL芯片120的第一区域121在封装基板110的第二表面1102的正投影。更优选地，光学部件140在封装基板110的第二表面1102的正投影的边缘与VCSEL芯片120的第一区域121在封装基板110的第二表面1102的正投影的边缘最小距离c介于0.05mm至0.8mm之间。因而可以在不影响光学部件140对VCSEL芯片120发射出的激光束进行扩散处理形成均匀或者阵列式的光斑的情况下，将光学部件尺寸缩小到传统的1/3至1/5，大大减低光学部件140的尺寸，降低封装成本。
在一种可替换的实施例中，光学部件140在封装基板110的第二表面1102的正投影的边缘与VCSEL芯片120的第一区域121在封装基板110的第二表面1102的正投影的边缘最小距离c可以比VCSEL芯片120第二区域122的宽度（a1、a2、b1、b2）小。
参照图2，光学部件140在封装基板110的第二表面1102的正投影优选形成为具有与VCSEL芯片120的第一区域121在封装基板110的第二表面1102的正投影的面积1.2至3.5倍的面积。则可以在不影响光学部件140对VCSEL芯片120发射出的激光束进行扩散处理形成均匀或者阵列式的光斑的情况下，将光学部件尺寸缩小到传统的1/3至1/5，有效降低光学部件140的面积，降低封装成本。
参照图3，在本实施例中，VCSEL芯片120发光面与光学部件140的入射面1401距离h至多为0.5mm。若VCSEL芯片120发光面与光学部件140的入射面1401距离h过大,例如h大于0.5mm，会导致封装尺寸过大，不利于该发光装置小型化。优选地，VCSEL芯片120发光面与光学部件140的入射面1401距离h为0.1mm至0.5mm。例如，VCSEL芯片120发光面与光学部件140的入射面1401距离h为0.3mm,可使激光束在光学部件的作用下均匀地扩散，封装工艺更容易实施。
此外，在本实施例中，VCSEL芯片120能够以20°至40°的发光角θ向上发射光束。考虑到发光装置的发光角，光学部件140的厚度T可以是0.2mm到0.6mm。光学部件140的厚度T被控制为大约0.2mm或更大，从而可以确保足够的激光发射范围。当光学部件140的厚度T小于0.2mm时，存在对在制造工艺或实际使用期间其被损坏的顾虑。此外，通过将光学部件140的厚度T设计为0.6mm或更小，可以实现紧凑的发光装置。
参照图2和图3，VCSEL芯片120的第一区域121在x方向的长度为R,光学部件140在x方向的长度为W，将W与R之差控制为介于0.05mm至1.5mm。其中，长度R和W表示VCSEL芯片120的第一区域121和光学部件140在x方向最大长度。由此，可以在不影响光学部件140对VCSEL芯片120发射出的激光束进行扩散处理形成均匀或者阵列式的光斑的情况下，将光学部件尺寸缩小到传统的1/3至1/5，大大减低光学部件140的尺寸，降低封装成本。例如，根据封装体的尺寸，W与R之差为0.5mm、0.8mm、1.2mm,即可在不影响发光装置100的光学性能情况下，大幅降低封装成本。
在可替换的实施例中，也可将W与R控制为下列关系：R+2h×tan(0.5θ)+0.6>W>R+2h×tan(0.5θ)+0.1。
例如，VCSEL芯片120第一区域121的长度R为0.8mm，VCSEL芯片120发光面与光学部件140的入射面1401距离h为0.3mm，发光角θ为30°，则光学部件140的长度W介于1.06mm至1.56 mm之间，W与R之差介于0.26mm至0.76mm。
应理解的是，虽然在图3中，描述的是发光装置100在x轴方向W与R之间的关系，但是，发光装置100在y轴方向也同样满足上述关系。
图4是根据在图1中示出的第一实施例的发光装置100的另一实施例的剖视图。参照图4，延伸部12顶面开设有向空腔内凹陷的安装槽102，玻璃层150至少部分设置在安装槽102内。玻璃层150部分与安装槽102结合，结合的方式包括胶合 、卡合等。由于顶面开设有安装槽102，在组装发光装置时，玻璃层150与安装槽102的底部和侧壁（即延伸部12的侧壁）相接触，表示玻璃层150在延伸部12内安装到位。玻璃层150设置在安装槽102内，在安装槽102的侧壁限制下，玻璃层150稳定的设置在空腔内，而且发光装置100的高度也能得到降低，有利于封装体的小型化。
第二实施例
第二实施例可以采用第一实施例的技术特征，下面将描述第一实施例的主要特征。
为了满足用户对输出功率的要求，可以在一个发光装置设置m（m≥2）颗VCSEL芯片增加发光装置的功率输出。
参照图5，根据第二实施例的发光装置200可包括封装基板210、m颗VCSEL芯片220、光学部件240和玻璃层250。
在本实施例中，VCSEL芯片220为m颗，例如m等于2，VCSEL芯片220a、VCSEL芯片220b。VCSEL芯片220a、VCSEL芯片220b设置在主体部21的第一表面2101上。
具体地，主体部21包括第一导电垫211a、211b及第二导电垫212a、212b。第一导电垫211a、211b及第二导电垫212a、212b可通过例如模具成型、贴附或电镀等方式，形成在主体部21上。在一些实施例中，第一导电垫211a、211b及第二导电垫212a、212b可包括铜、铝、镍、锡或前述的组合，但不以此为限。应理解的是，虽然在图5中，第一导电垫211a、211b及第二导电垫212a、212b是设置于主体部21的第一表面2101上，但在某些实施方式中，第一导电垫211a、211b及第二导电垫212a、212b亦可嵌置于主体部21中，并与主体部21的第一表面2101齐平。
此外，本实施例中还包括被设置在主体部21的第二表面2102，彼此间隔开的第一焊盘215a、215b以及第二焊盘216a、216b，并且还包括贯通第一表面2101和第二表面1102的第一导通孔213a、213b和第二导通孔214a、214b。该第一导通孔213a用于实现第一导电垫211a与第一焊盘215a的电连接，第二导通孔214a用于实现第二导电垫212a与第二焊盘216a的电连接,第一导通孔213b用于实现第一导电垫211b与第一焊盘215b的电连接，第二导通孔214b用于实现第二导电垫212b与第二焊盘216b的电连接。
如图5所示，发光装置200进一步包括第一导线217a、217b。VCSEL芯片220a与第一导电垫211a电性连接，且第一导线217a电性连接VCSEL芯片220a与第二导电垫212a；VCSEL芯片220b与第一导电垫211b电性连接，且第一导线217b电性连接VCSEL芯片220b与第二导电垫212b。具体地，VCSEL芯片220a可通过银胶固晶、锡膏固晶、助焊剂固晶、焊料固晶或芯片底部金属镀层热压共晶从而设置于第一导电垫211a上，VCSEL芯片220a的第二区域222a通过打线接合(wire bonding)方式通过第一导线217a电性连接至第二导电垫212a，以形成回路；同样，VCSEL芯片220b可通过银胶固晶、锡膏固晶、助焊剂固晶、焊料固晶或芯片底部金属镀层热压共晶从而设置于第一导电垫211b上，VCSEL芯片220b的第二区域222b通过打线接合(wire bonding)方式通过第一导线217b电性连接至第二导电垫212b，以形成回路；
参照图5，发光装置200包括玻璃层250和光学部件240。本实施例中，玻璃层250具有相对设置的第三表面2501和和远离封装基板一侧的第四表面2502，玻璃层250的第三表面2501设有光学部件240，具体地，光学部件240具有相对设置的入射面2401和出射面2402。玻璃层250的第三表面2501和光学部件240的出射面2402可以通过透明的粘合构件 (未示出)彼此粘合。例如，粘合构件可包括有机材料、环氧树脂或硅树脂中的任何一种或多种。VCSEL芯片220a和VCSEL芯片220b的发光面朝向入射面2401，光学部件240将VCSEL芯片220a和VCSEL芯片220b发射的激光束形成均匀或者阵列式的光斑。
参照图6a和图6b，图6a和图6b为根据第二实施例的发光装置200中的部分结构于封装基板上的正投影示意图。本实施例中，为了能够使光学部件240覆盖VCSEL芯片220a和VCSEL芯片220b激光束发散范围，从而能对VCSEL芯片220a和VCSEL芯片220b发射出的激光束进行扩散处理形成均匀或者阵列式的光斑，又能够使光学部件240实现最小化，降低封装成本,光学部件240在封装基板210的第二表面2102的正投影覆盖VCSEL芯片220a的第一区域221a和VCSEL芯片220b的第一区域221b在封装基板210的第二表面2102的正投影。更优选地，光学部件240在封装基板210的第二表面2102的正投影的边缘与VCSEL芯片220a的第一区域221a和/或者VCSEL芯片220b的第一区域221b在封装基板210在封装基板210的第二表面2102的正投影的边缘最小距离c介于0.05mm至0.8mm之间。
此外，相邻VCSEL芯片之间的间距为d,间距d优选为0.2mm至1mm，例如本实施例中，VCSEL芯片220a和VCSEL芯片220b之间的间距d为0.2mm。
在可替换的实施例中，参照图7，为了能够实现用户对发光装置不同角度的光场分布的需求，m颗VCSEL芯片上方分别设置有m（m≥2）个光学部件。m（m≥2）个光学部件分别将m颗VCSEL芯片发射的激光束形成均匀或者阵列式的光斑。
本实施例中，VCSEL芯片为m颗，例如m等于2，VCSEL芯片220a、VCSEL芯片220b。为了能够使光学部件240a和光学部件240b分别覆盖VCSEL芯片220a和VCSEL芯片220b激光束发散范围，从而能对VCSEL芯片220a和VCSEL芯片220b发射出的激光束进行扩散处理形成均匀或者阵列式的光斑，又能够使光学部件240a和光学部件240b实现最小化，降低封装成本，参照图7，光学部件240a在封装基板210的第二表面2102的正投影覆盖VCSEL芯片220a的第一区域221a在封装基板210的第二表面2102的正投影。更优选地，光学部件240a在封装基板210的第二表面2102的正投影的边缘与VCSEL芯片220a的第一区域221a在封装基板210的第二表面2102的正投影的边缘最小距离c介于0.05mm至0.8mm之间。
不难理解的是，光学部件240b与VCSEL芯片220b的第一区域221b之间也满足上述关系。
此外，本实施例中，光学部件140a和光学部件140b光学特性可以不同，例如光学部件140a和光学部件140b纳米压印结构可以不相同，使得对激光衍射扩散作用不相同，从而实现不同的发光角度，例如光学部件140a配合VCSEL芯片能够实现60*45度，光学部件140b配合VCSEL芯片能够实现75*60度。
第三实施例
第三实施例可以采用第二实施例的技术特征，下面将描述第三实施例的主要特征。
图8是根据第三实施例的发光装置300的平面图，图9是在图8中示出的根据第一实施例的发光装置300省略了光学部件340的俯视图，图10是根据在图8和图9中示出的第三实施例的发光装置300沿着线A1-A1’截取的剖面图。
首先，参照图8，根据第三实施例的发光装置300可包括封装基板310、光学部件340和封装体350。在本实施例中，地面可由x轴和y轴限定，并且垂直于地面的法线方向可以是z轴。在本实施例中，封装基板310在表面上沿x轴方向的水平宽度可以等于沿y轴方向的水平宽度，但不限于此。
参照图8至图10，根据第三实施例的发光装置300包括：封装基板310，具有相对设置的第一表面3101和第二表面3102；VCSEL芯片320，设置在封装基板310第一表面3101上；光学部件340，具有相对设置的入射面3401和出射面3402，设置在VCSEL芯片320上方使得VCSEL芯片320朝向光学部件340的入射面3401；以及封装体350，形成于封装基板310上，包裹VCSEL芯片320和光学部件340并暴露出光学部件340的出射面3402。本实施例中，从VCSEL芯片320发射的激光通过光学部件340扩散，使激光束形成均匀或者阵列式的光斑。
参照图9，VCSEL芯片320可包括第一区域321和第二区域322。第一区域321为VCSEL芯片220发射激光束的区域，第二区域322为VCSEL芯片320不发射激光束的区域，也称作为电极区。在本实施例中，VCSEL芯片320分为第一区域321和环绕第一区域321的第二区域322。参照图9，沿x轴方向，第二区域322的宽度a1和a2可以为0.05mm至0.2mm。a1和a2可以是相同的，也可以是不同的。沿y轴方向，第二区域322的宽度b1和b2可以为0.05mm至0.2mm。b1和b2可以是相同的，也可以是不同的。此外，第一区域321的面积占VCSEL芯片320面积的50%至95%，其中VCSEL芯片320面积指VCSEL芯片衬底的面积。若第一区域321面积占比小于50%，则会导致发射激光束的区域过小。若第一区域321面积占比大于95%，则会导致第二区域322过小，电极区不易打线。VCSEL芯片320的第一区域321可以为规则图形，例如长方形、正方形或圆形，也可以为不规则图形。
本实施例中，封装基板310可包括具有优秀的支撑强度、散热性、绝缘性等的材料。封装基板310可包括具有高导热率的材料。此外，封装基板310可以由具有良好散热性质的材料制成，使得从VCSEL芯片320产生的热可被有效地排放到外部。在可选的实施例中，封装基板310可包括绝缘材料。例如，封装基板310可包括陶瓷材料。封装基板310可包括低温共烧陶瓷(LTCC)或高温共烧陶瓷(HTCC)。在另一可选的实施例中，封装基板可以设置有硅树脂、环氧树脂、包括塑料材料的热固性树脂或高耐热性材料。
参照图9，根据本实施例的发光装置300可包括第一导电垫311和第二导电垫312。第一导电垫311和第二导电垫312可通过模具成型、贴附或电镀等方式，形成在封装基板310的第一表面3101上且彼此间隔开。在一些实施例中，第一导电垫311和第二导电垫312可包括铜、铝、镍、锡或前述的组合，但不以此为限。应理解的是，虽然在图10中，第一导电垫311及第二导电垫312是设置于封装基板310的第一表面3101上，但在某些实施方式中，第一导电垫311和第二导电垫312亦可嵌置于封装基板310中，并与封装基板310的第一表面3101齐平。
在本实施例中，VCSEL芯片320设置于封装基板310的第一表面3101上，并与第一导电垫311和第二导电垫312电性连接。具体地，如图10所示，VCSEL芯片320可通过银胶固晶、锡膏固晶、助焊剂固晶、焊料固晶或芯片底部金属镀层热压共晶从而设置于第一导电垫311上，通过在VCSEL芯片320的第二区域322上打线接合(wire bonding)，第一导线317电性连接至第二导电垫312，以形成回路。 VCSEL芯片320能够在发光面（远离封装基板一侧的表面）处向上方发射光束。例如，VCSEL芯片320能够以20°至40°的发光角θ向上发射光束。VCSEL芯片320发射激光束的波长介于780nm至1200nm之间。
参照图10，根据本实施例的发光装置300可包括间隔结构330，间隔结构330设置在VCSEL芯片320的第二区域322上。具体地，间隔结构330具有相对设置的顶表面3301和底表面3302，间隔结构330的底表面3302和VCSEL芯片220发光面的第二区域322通过粘合构件（未示出）彼此粘合。例如，粘合构件可包括有机材料、环氧树脂或硅树脂中的任何一种或多种。间隔结构330需对第一导线317进行避让，因此在制作间隔结构330时应对第一导线317与间隔结构330接触区域设置让位区332。间隔结构330的俯视轮廓为“中空矩形”(或“围坝型”)，但本发明不以此为限。参照图11，间隔结构330的高度h至多为0.5mm。若间隔结构330的高度h过大，例如大于0.5mm，会导致封装尺寸过大，不利于该发光装置300小型化。优选地，间隔结构330的高度h为0.1mm至0.5mm。例如，在本实施例中，间隔结构330的高度h为0.3mm,可使光线在光学部件的作用下均匀地扩散，封装工艺更容易实施。
参照图11，在本实施例中，光学部件340设置在间隔结构330上。具体地，光学部件340具有相对设置的入射面3401和出射面3402，当光学部件340设置在间隔结构330上，VCSEL芯片340的发光面朝向光学部件340的入射面3401。光学部件340的入射面3401可以部分与间隔结构330的顶表面3301通过粘合构件（未示出）彼此粘合。粘合构件可以由具有优秀的粘合性、耐湿性、绝缘性和支撑强度的材料形成。例如，粘合构件可包括有机材料、环氧树脂或硅树脂中的任何一种或多种。在一个实施例中，光学元件340为衍射光学元件341。衍射光学元件341的入射面3401上设置有衍射微结构342。在可选的实施例中，衍射微结构342可以采用纳米压印等方式以获得所述衍射光学元件341，其表面形貌可分为随机形貌、规则形貌。VCSEL芯片320的发光面朝向入射面3401，VCSEL芯片320发射的激光束经过衍射微结构342后，经衍射微结构342将激光束形成均匀或者阵列式的光斑。
如先前技术所述，在目前现有的VCSEL发光装置中，光学部件340的尺寸一般与发光装置的尺寸相近，则需要较大面积的光学部件340，而光学部件340的成本高昂，因此封装成本居高不下。相较于上述先前技术所遇到的问题，在此揭露的发光装置300中，在不影响光学部件340对VCSEL芯片发射出的激光束进行扩散处理形成均匀或者阵列式的光斑的情况下，参照图12，图12是根据第三实施例的发光装置300中的部分结构于封装基板310上的正投影示意图，光学部件340在封装基板310的第二表面3102的正投影覆盖VCSEL芯片320的第一区域321在封装基板310的第二表面3102的正投影。更优选地，光学部件340在封装基板310的第二表面3102的正投影的边缘与VCSEL芯片320的第一区域321在封装基板310的第二表面3102的正投影的边缘最小距离c介于0.05mm至0.5mm之间。因而可以在不影响光学部件340对VCSEL芯片320发射出的激光束进行扩散处理形成均匀或者阵列式的光斑的情况下，将光学部件尺寸缩小到传统的1/5至1/9，大大减低光学部件340的尺寸，降低封装成本。并且，通过采用平面基板替代碗杯型基板（具有主体部和延伸部），在封装基板310的外周采用封装体350包裹光学元件340，可有效地缩小发光装置的尺寸便于发光装置集成化和小型化，例如可将常规封装体尺寸3.5mm*2.8mm 缩减到1.6 *2.0 mm，还可以阻隔水气及避免氧化及剥离情况的发生。
参照图12，光学部件340在封装基板310的第二表面3102的正投影优选形成为具有与VCSEL芯片320的第一区域321在封装基板310的第二表面3102的正投影的面积1.2至2.5倍的面积。则可以在不影响光学部件340对VCSEL芯片320发射出的激光束进行扩散处理形成均匀或者阵列式的光斑的情况下，将光学部件尺寸缩小到传统的1/5至1/9，有效降低光学部件340的面积，降低封装成本。
此外，在此参照图11，在本实施例中，考虑到发光装置300的发光角，光学部件340的厚度T可以是0.2mm到0.6mm。光学部件340的厚度T被控制为大约0.2mm或更大，从而可以确保足够的激光发射范围。当光学部件340的厚度T小于0.2mm时，存在对在制造工艺或实际使用期间其被损坏的顾虑。此外，通过将光学部件340的厚度T设计为0.6mm或更小，可以实现紧凑的发光装置。
参照图11，VCSEL芯片320的第一区域321在x方向的长度为R,光学部件340在x方向的长度为W，将W与R之差控制为介于0.05mm至1mm。其中，长度R和W表示VCSEL芯片320的第一区域321和光学部件340在x方向最大长度。由此，可以在不影响光学部件340对VCSEL芯片320发射出的激光束进行扩散处理形成均匀或者阵列式的光斑的情况下，大大减低光学部件340的尺寸，降低封装成本。例如，根据封装体的尺寸，W与R之差为0.5mm、0.8mm、1.2mm,即可在不影响发光装置300的光学性能情况下，大幅降低封装成本。
在可替换的实施例中，也可将W与R控制为下列关系：R+2h×tan(0.5θ)+0.6>W>R+2h×tan(0.5θ)+0.1。
例如，VCSEL芯片320第一区域321的长度R为0.8mm，VCSEL芯片320发光面与光学部件340的入射面3401距离h为0.3mm，发光角θ为30°，则光学部件340的长度W介于1.06mm至1.56 mm之间，W与R之差介于0.26mm至0.76mm。
应理解的是，虽然在图11中，描述的是发光装置300在x轴方向W与R之间的关系，但是，发光装置300在y轴方向也同样满足上述关系。
VCSEL芯片320发射的激光束经光学部件340扩散处理后，发光角度产生变化，可有效地适应多种应用，灵活性强。具体地，可有效地实现发光装置300发光角度的调节，实现发光装置发光角度从30°至120°可调变化。
在本实施例中，参照图11，封装体350形成于封装基板310上，包裹VCSEL芯片320、间隔结构330和光学部件340的侧壁，并暴露出光学部件340的出射面3402。封装体350可阻隔水气，并避免第一导电垫311、第二导电垫312、以及第一导线317的氧化。另一方面，封装体350亦可保护VCSEL芯片320与第一导电垫311之间的接合，以及第一导线317与VCSEL芯片320或第二导电垫312之间的接合，从而避免剥离情况的发生。在一些实施例中，封装体350包括硅氧树脂、环氧树脂或压克力树脂，但不以此为限。
在可替换的实施例中，参照图13，间隔结构330设置在VCSEL芯片320发光面上，间隔结构330通过粘合构件（未示出）与VCSEL芯片320发光面粘合，粘合构件331为透明材质，例如透明的有机材料、透明的环氧树脂或透明的硅树脂中的任何一种或多种。此外，间隔结构330与光学部件340之间存在空气间隙360。详言之，间隔结构330远离封装基板310一侧表面为内凹结构，据此，间隔结构330与光学部件340可以界定出空气间隙360，从而使光路具有介质折射率差，可有效的提高发光装置的出光均匀性。
在可替换的实施例中，参照图14，光学部件340包括相对设置的入射面3401和出射面3401，光学部件340的入射面3401直接通过粘合构件（未示出）与VCSEL芯片320粘合，粘合构件为透明材质，例如透明的有机材料、透明的环氧树脂或透明的硅树脂中的任何一种或多种。在一个实施例中，光学部件340为衍射光学元件341。衍射光学元件341的出射面3402上设置有衍射微结构342，VCSEL芯片320发射的激光束经过衍射光学元件341的衍射微结构342后进入外界环境形成均匀或者阵列式的光斑。由于衍射光学元件341没有通过间隔结构直接设置在VCSEL芯片320芯片上方，可进一步降低发光装置300的尺寸，有利于封装体的小型化。
如上所述，本发明提供的发光装置，至少具备如下有益技术效果：
本发明的发光装置包括封装基板、垂直共振腔面射型激光二极管以及光学部件，其中，光学部件在封装基板的第二表面的正投影的边缘与垂直共振腔面射型激光二极管的第一区域在封装基板的第二表面的正投影的边缘最小距离介于0.05mm至0.8mm之间，甚至于介于0.05mm至0.5mm之间。相对于现有的发光装置来说，在不影响光学部件对VCSEL芯片发射出的激光束进行扩散处理形成均匀或者阵列式的光斑的情况下，将光学部件的尺寸缩小到传统发光装置的1/3-1/5，甚至于缩小到传统发光装置的1/5-1/9，极大降低了封装成本。
本发明通过在不影响光学部件对VCSEL芯片发射出的激光束进行扩散处理形成均匀或者阵列式的光斑的情况下，控制光学元件的尺寸，使光学元件的尺寸尽可能最小化，大大降低封装成本。
本发明还通过采用平面基板替代碗杯型基板，在基板的外周采用封装体包裹光学元件，可有效地缩小发光装置的尺寸便于发光装置集成化和小型化，并阻隔水气及避免氧化及剥离情况的发生。

Claims (25)

  1. 一种发光装置，其特征在于，包括：
    封装基板，所述封装基板具有相对设置的第一表面和第二表面；
    垂直共振腔面射型激光二极管，设置于封装基板的第一表面上，所述垂直共振腔面射型激光二极管具有一远离封装基板一侧的发光面，所述发光面具有一第一区域，所述第一区域为所述垂直共振腔面射型激光二极管发射激光束区域；
    光学部件，具有相对设置的入射面和出射面，所述光学部件设置于所述垂直共振腔面射型激光二极管的第一区域的上方以使所述垂直共振腔面射型激光二极管发光面朝向光学部件的入射面；
    其中，所述光学部件在所述封装基板的第二表面的正投影的边缘与所述垂直共振腔面射型激光二极管的第一区域在所述封装基板的第二表面的正投影的边缘最小距离介于0.05mm至0.8mm之间。
  2. 根据权利要求1所述的发光装置，其特征在于：所述封装基板第一表面由x轴和y轴限定，并且垂直于所述封装基板第一表面的法线方向为z轴，所述光学部件在x轴方向长度为W，所述垂直共振腔面射型激光二极管的第一区域在x轴方向长度为R，W与R之差介于为0.05mm至1.5mm。
  3. 根据权利要求1所述的发光装置，其特征在于：所述垂直共振腔面射型激光二极管发光面与所述光学部件入射面之间的距离为h，所述垂直共振腔面射型激光二极管发光角度为θ，其满足下列关系：R+2h×tan(0.5θ)+0.6>W>R+2h×tan(0.5θ)+0.1。
  4. 根据权利要求1所述的发光装置，其特征在于：所述垂直共振腔面射型激光二极管发光面与所述光学部件入射面之间的距离为h，其中所述h介于0.1mm至0.5mm之间。
  5. 根据权利要求1所述的发光装置，其特征在于：所述封装基板包括主体部和延伸部，所述主体部具有相对设置的第一表面和第二表面，所述垂直共振腔面射型激光二极管设置于所述第一表面上。
  6. 根据权利要求5所述的发光装置，其特征在于：还包括玻璃层，具有相对设置的第三表面和远离封装基板一侧的第四表面，所述玻璃层设置在所述延伸部上，所述第三表面上设有所述光学部件。
  7. 根据权利要求1所述的发光装置，其特征在于：所述光学部件在所述封装基板的第二表面的正投影的边缘与所述垂直共振腔面射型激光二极管的第一区域在所述封装基板的第二表面的正投影的边缘最小距离介于0.05mm至0.5mm之间。
  8. 根据权利要求7所述的发光装置，其特征在于：所述封装基板第一表面由x轴和y轴限定，并且垂直于所述封装基板第一表面的法线方向为z轴，所述光学部件在x轴方向长度为W，所述垂直共振腔面射型激光二极管的第一区域在x轴方向长度为R，W与R之差介于为0.05mm至1mm。
  9. 根据权利要求7所述的发光装置，其特征在于：还包括封装体，形成于所述封装基板上，所述封装体包裹所述垂直共振腔面射型激光二极管和所述光学部件并暴露出所述光学部件的出射面。
  10. 根据权利要求7所述的发光装置，其特征在于：所述垂直共振腔面射型激光二极管发光面还具有一第二区域，所述第二区域为垂直共振腔面射型激光二极管不发射激光束区域，所述第二区域环绕所述第一区域。
  11. 根据权利要求10所述的发光装置，其特征在于：还包括间隔结构，所述间隔结构设置于所述第二区域上，所述光学部件设置于所述间隔结构上。
  12. 根据权利要求11所述的发光装置，其特征在于：所述间隔高度介于0.1mm至0.5mm。
  13. 根据权利要求1所述的发光装置，其特征在于：所述光学部件在所述封装基板的第二表面的正投影面积与所述垂直共振腔面射型激光二极管的第一区域在所述封装基板的第二表面的正投影面积的比值介于1.2至3.5之间。
  14. 根据权利要求13所述的发光装置，其特征在于：所述光学部件在所述封装基板的第二表面的正投影面积与所述垂直共振腔面射型激光二极管的第一区域在所述封装基板的第二表面的正投影面积的比值介于1.2至2.5之间。
  15. 根据权利要求1所述的发光装置，其特征在于：所述垂直共振腔面射型激光二极管发光角度θ介于20°至40°。
  16. 根据权利要求1所述的发光装置，其特征在于：所述垂直共振腔面射型激光二极管发射出的激光束经光学部件扩散后发光角度介于30°至120°。
  17. 根据权利要求1所述的发光装置，其特征在于：所述垂直共振腔面射型激光二极管发光发射激光的波长介于780nm至1200nm之间。
  18. 根据权利要求1所述的发光装置，其特征在于：所述垂直共振腔面射型激光二极管第一区域占所述垂直共振腔面射型激光二极管面积的50%至95%。
  19. 根据权利要求1所述的发光装置，其特征在于：所述光学元件为衍射光学元件。
  20. 根据权利要求19所述的发光装置，其特征在于：所述衍射光学元件包括衍射微结构，所述衍射微结构设置在所述衍射光学元件入射面。
  21. 根据权利要求19所述的发光装置，其特征在于：所述衍射光学元件包括衍射微结构，所述衍射微结构设置在所述衍射光学元件出射面。
  22. 一种发光装置，其特征在于，包括：
    封装基板，所述封装基板具有相对设置的第一表面和第二表面；
    m颗垂直共振腔面射型激光二极管（m≥2），设置于所述封装基板的第一表面上，所述m颗垂直共振腔面射型激光二极管分别具有一远离封装基板一侧的发光面，所述发光面分别具有一第一区域，所述第一区域为垂直共振腔面射型激光二极管发射激光束区域；
    光学部件，具有相对设置的入射面和出射面，所述光学部件设置于所述m颗垂直共振腔面射型激光二极管的第一区域的上方以使所述m颗垂直共振腔面射型激光二极管发光面朝向所述光学部件的入射面；
    其中，且所述光学部件在所述封装基板的第二表面的正投影的边缘至少与其中所述一颗垂直共振腔面射型激光二极管的第一区域在所述封装基板的第二表面的正投影的边缘最小距离介于0.05mm至0.8mm之间。
  23. 一种发光装置，其特征在于，包括：
    封装基板，所述封装基板具有相对设置的第一表面和第二表面；
    m颗垂直共振腔面射型激光二极管（m≥2），设置于所述封装基板的第一表面上，所述m颗垂直共振腔面射型激光二极管分别具有一远离封装基板一侧的发光面，所述发光面分别具有一第一区域，所述第一区域为垂直共振腔面射型激光二极管发射激光束区域；
    m个光学部件（m≥2），具有相对设置的入射面和出射面，所述m个光学部件设置于所述m颗垂直共振腔面射型激光二极管的第一区域的上方以使所述m颗垂直共振腔面射型激光二极管发光面分别朝向所述m个光学部件的入射面；
    其中，所述m个光学部件在所述封装基板的第二表面的正投影的边缘与所述m颗垂直共振腔面射型激光二极管的第一区域在所述封装基板的第二表面的正投影的边缘最小距离分别介于0.05mm至0.8mm之间。
  24. 根据权利要求22或23所述的发光装置，其特征在于：所述垂直共振腔面射型激光二极管之间的间距为d,其中所述d介于0.2mm至1mm。
  25. 根据权利要求23所述的发光装置，其特征在于：所述各个光学部件的光学性质不同。
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