CN212625635U - 一种平面镜面线路支架 - Google Patents
一种平面镜面线路支架 Download PDFInfo
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- CN212625635U CN212625635U CN202021622829.2U CN202021622829U CN212625635U CN 212625635 U CN212625635 U CN 212625635U CN 202021622829 U CN202021622829 U CN 202021622829U CN 212625635 U CN212625635 U CN 212625635U
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- 239000010410 layer Substances 0.000 claims abstract description 105
- 239000011347 resin Substances 0.000 claims abstract description 25
- 229920005989 resin Polymers 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000002335 surface treatment layer Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011889 copper foil Substances 0.000 claims abstract description 6
- 239000002344 surface layer Substances 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000004744 fabric Substances 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 239000011152 fibreglass Substances 0.000 claims description 2
- 238000003466 welding Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000007639 printing Methods 0.000 abstract description 6
- 239000006185 dispersion Substances 0.000 abstract description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical group [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 4
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202021622829.2U CN212625635U (zh) | 2020-08-07 | 2020-08-07 | 一种平面镜面线路支架 |
Applications Claiming Priority (1)
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CN202021622829.2U CN212625635U (zh) | 2020-08-07 | 2020-08-07 | 一种平面镜面线路支架 |
Publications (1)
Publication Number | Publication Date |
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CN212625635U true CN212625635U (zh) | 2021-02-26 |
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CN202021622829.2U Active CN212625635U (zh) | 2020-08-07 | 2020-08-07 | 一种平面镜面线路支架 |
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CN (1) | CN212625635U (zh) |
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2020
- 2020-08-07 CN CN202021622829.2U patent/CN212625635U/zh active Active
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240520 Address after: 337009 Ganxiang Cooperation Industrial Park (Shangli Industrial Park), Jinshan Town, Shangli County, Pingxiang City, Jiangxi Province Patentee after: Jiangxi Xinju Energy Technology Co.,Ltd. Country or region after: China Address before: 518000 3rd floor, No.53, Dapu 2nd Road, Ho yigangtou Industrial Zone, Shajing street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN XIN JU NENG ELECTRONICS CO.,LTD. Country or region before: China |