CN212572483U - Ultrahigh frequency power amplifying device - Google Patents

Ultrahigh frequency power amplifying device Download PDF

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Publication number
CN212572483U
CN212572483U CN202021547238.3U CN202021547238U CN212572483U CN 212572483 U CN212572483 U CN 212572483U CN 202021547238 U CN202021547238 U CN 202021547238U CN 212572483 U CN212572483 U CN 212572483U
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CN
China
Prior art keywords
unit
impedance
capacitor
network unit
matching network
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Expired - Fee Related
Application number
CN202021547238.3U
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Chinese (zh)
Inventor
王茂华
周国睿
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Sichuan Shentai Microwave Co ltd
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Sichuan Shentai Microwave Co ltd
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Priority to CN202021547238.3U priority Critical patent/CN212572483U/en
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Publication of CN212572483U publication Critical patent/CN212572483U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The utility model discloses a ultrahigh frequency power amplifying device, which comprises a cavity and an amplifying circuit arranged in the cavity; the amplifying circuit comprises a driver unit, a first matching network unit, a pushing unit, a second matching network unit, an amplifier unit, a filter network unit and an open-circuit protection unit which are electrically connected in sequence, wherein the output end of the amplifier unit is electrically connected with the output end of the first matching network unit through a harmonic negative feedback unit. The utility model introduces harmonic negative feedback inside to effectively restrain harmonic wave in the excitation signal, so that the energy is concentrated in the main spectrum, and the output efficiency of the power amplifier is improved; meanwhile, under the condition that the power amplifier outputs no load, the open-circuit protection unit can effectively absorb energy reflection, damage of high-power signals to the power amplifier tube is avoided, and reliability is improved.

Description

Ultrahigh frequency power amplifying device
Technical Field
The utility model relates to a microwave power amplifier technical field, concretely relates to high efficiency high reliability superfrequency power amplification device.
Background
The microwave power amplifier amplifies the modulated microwave signal to the required power value and sends the signal to the antenna for transmission.
The main problems and defects of the current high-frequency power amplifier are as follows:
a. the efficiency is low, generally 30-40%;
b. the reliability is poor, and the device is easy to damage under the mismatch condition.
SUMMERY OF THE UTILITY MODEL
The problem to inefficiency, the reliability difference that power amplifier exists among the prior art, the utility model provides a high efficiency high reliability superfrequency power amplification device.
In order to achieve the above object, the utility model adopts the following technical scheme:
an ultrahigh frequency power amplifying device comprises a cavity and an amplifying circuit arranged in the cavity; the amplifying circuit comprises a driver unit, a first matching network unit, a pushing unit, a second matching network unit, an amplifier unit, a filter network unit and an open-circuit protection unit which are electrically connected in sequence, wherein the output end of the amplifier unit is electrically connected with the output end of the first matching network unit through a harmonic negative feedback unit.
Preferably, the power supply processing unit is further included, and the power supply processing unit is electrically connected with the excitation stage unit and the amplification stage unit respectively.
Preferably, an input end of the first matching network unit is connected to a gate of an MOS transistor through an impedance Z1, an impedance Z2, a capacitor C1, an impedance Z3, and an impedance Z3, which are sequentially connected in series, a connection end of the impedance Z3 and the impedance Z3 is connected to a bias voltage through a resistor R3 and a transformer B3, one end of the resistor R3 is grounded through a capacitor C3, the other end of the resistor R3 is grounded through a capacitor C3, and a capacitor C3, respectively, a drain of the MOS transistor is connected to an output end through an impedance Z3, a capacitor C3, and a capacitor C3, which are sequentially connected in series, and a connection end of the impedance Z3 and the impedance Z3 is connected to a power supply voltage and grounded through a capacitor C3, respectively.
Preferably, the circuit structure of the second matching network unit is the same as the circuit structure of the first matching network unit.
Preferably, the filter network unit includes a plurality of cascaded filter structures, and the filter structures are composed of capacitors and inductors connected in parallel.
Preferably, the harmonic negative feedback unit comprises a coupler, a filter, a phase shifter, an attenuator and a coupler which are cascaded in sequence.
The utility model discloses following beneficial effect has:
the utility model introduces harmonic negative feedback inside to effectively restrain harmonic wave in the excitation signal, so that the energy is concentrated in the main spectrum, and the output efficiency of the power amplifier is improved; meanwhile, under the condition that the power amplifier outputs no load, the open-circuit protection unit can effectively absorb energy reflection, damage of high-power signals to the power amplifier tube is avoided, and reliability is improved.
Drawings
Fig. 1 is a schematic structural diagram of an ultrahigh frequency power amplifying device of the present invention;
fig. 2 is a schematic diagram of a first matching network unit in an embodiment of the present invention;
fig. 3 is a schematic diagram of a harmonic negative feedback unit in an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and various changes may be made apparent to those skilled in the art within the spirit and scope of the present invention as defined and defined by the appended claims.
As shown in fig. 1, an embodiment of the present invention provides an ultrahigh frequency power amplifying device, which includes a cavity and an amplifying circuit disposed inside the cavity; the amplifying circuit comprises a driver unit, a first matching network unit, a pushing unit, a second matching network unit, an amplifier unit, a filter network unit and an open-circuit protection unit which are electrically connected in sequence, wherein the output end of the amplifier unit is electrically connected with the output end of the first matching network unit through a harmonic negative feedback unit.
The utility model discloses an amplifier circuit level is clear, and circuit and structural design are reasonable, the convenience of electromagnetic compatibility problem and user's installation has been fully considered when the design. And the power device used by the power amplifier basically adopts a power device commonly used in the current communication market, so that the product reliability is improved, the production cost of the product is reduced, the advantages of the product in the application field can be effectively improved, and the power amplifier has excellent market competitiveness.
In an optional embodiment of the present invention, the present invention further comprises a power processing unit, and the power processing unit is electrically connected to the excitation stage unit and the amplification stage unit respectively. The power supply processing unit adopts a power supply device which is commonly used in the current market, thereby reducing the product cost.
In an optional embodiment of the present invention, as shown in fig. 2, an input end of the first matching network unit is connected to a gate of the MOS transistor through an impedance Z1, an impedance Z2, a capacitor C1, an impedance Z3, and an impedance Z3, which are sequentially connected in series, a connection end of the impedance Z3 and the impedance Z3 is connected to a bias voltage through a resistor R3 and a transformer B3, one end of the resistor R3 is grounded through a capacitor C3, the other end of the resistor R3 is connected to the ground through a capacitor C3, and a capacitor C3, respectively, a drain of the MOS transistor is connected to the output end through an impedance Z3, a capacitor C3, and a capacitor C3 which are sequentially connected in series.
The utility model discloses well circuit structure of second matching network unit with the circuit structure of first matching network unit is the same, does not do here and does not describe repeatedly.
In an optional embodiment of the present invention, the filter network unit comprises a plurality of cascaded filter structures, wherein the filter structure is composed of a capacitor and an inductor connected in parallel.
In an optional embodiment of the present invention, as shown in fig. 3, the harmonic negative feedback unit includes a coupler, a filter, a phase shifter, an attenuator, and a coupler, which are sequentially cascaded. Harmonic waves in the excitation signals are effectively inhibited by introducing harmonic negative feedback, so that energy can be concentrated in a main spectrum, and the output efficiency of the power amplifier is improved.
The utility model discloses well open circuit protection unit adopts the general protection device that opens a way on the existing market, under the unloaded condition of power amplifier output, open circuit protection unit can effectively absorb the energy reflection, avoids high-power signal to the damage of power amplifier tube, and then improves the reliability.
The utility model discloses a superfrequency power amplification device's theory of operation does:
the input signal is amplified by the driver unit, enters the push stage through the first matching network unit, enters the amplifier unit through the second matching network unit again, the harmonic part output by the amplifier unit returns to the push stage unit through the harmonic negative feedback unit to reduce the harmonic wave introduced by nonlinearity, and the main spectrum part output by the amplifier unit is output to the transmitting antenna through the filter network unit and the open-circuit protection unit.
The utility model discloses a latest power amplifier chip technique and power control mode, the integrated level is high, owing to adopted the negative feedback technique, output efficiency is higher than the homogeneous power amplifier, can reach 50%.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention, and it is to be understood that the scope of the invention is not limited to such specific statements and embodiments. Those skilled in the art can make various other specific modifications and combinations based on the teachings of the present invention without departing from the spirit of the invention, and such modifications and combinations are still within the scope of the invention.

Claims (6)

1. An ultrahigh frequency power amplifying device is characterized by comprising a cavity and an amplifying circuit arranged in the cavity; the amplifying circuit comprises a driver unit, a first matching network unit, a pushing unit, a second matching network unit, an amplifier unit, a filter network unit and an open-circuit protection unit which are electrically connected in sequence, wherein the output end of the amplifier unit is electrically connected with the output end of the first matching network unit through a harmonic negative feedback unit.
2. The vhf power amplifying device according to claim 1, further comprising a power processing unit electrically connected to the driver stage unit and the amplifier stage unit, respectively.
3. The VHF power amplifying device according to claim 1, wherein the input terminal of the first matching network unit is connected to the gate of the MOS transistor through an impedance Z1, an impedance Z2, a capacitor C1, an impedance Z3, an impedance Z4 and an impedance Z5 connected in series, the connection end of the impedance Z4 and the impedance Z5 is connected with bias voltage through a resistor R1 and a transformer B1, one end of the resistor R1 is grounded through a capacitor C3, the other end of the resistor R1 is grounded through a capacitor C4, a capacitor C5, a capacitor C6 and a capacitor C7 respectively, the drain of the MOS transistor is connected with the output end through an impedance Z6, an impedance Z7, an impedance Z8, an impedance Z9, a capacitor C2 and an impedance Z10 which are sequentially connected in series, the connection end of the impedance Z6 and the impedance Z7 is connected with a power supply voltage, and is grounded through a capacitor C8, a capacitor C9, a capacitor C10, a capacitor C11, a capacitor C12, a capacitor C13 and a capacitor C14.
4. The uhf power amplification apparatus according to claim 3, wherein a circuit configuration of the second matching network unit is the same as a circuit configuration of the first matching network unit.
5. The vhf power amplifying device according to claim 1, wherein the filter network unit comprises a plurality of cascaded filter structures, the filter structures consisting of capacitors and inductors connected in parallel.
6. The uhf power amplifying apparatus of claim 1, wherein the harmonic negative feedback unit includes a coupler, a filter, a phase shifter, an attenuator and a coupler, which are sequentially cascaded.
CN202021547238.3U 2020-07-30 2020-07-30 Ultrahigh frequency power amplifying device Expired - Fee Related CN212572483U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202021547238.3U CN212572483U (en) 2020-07-30 2020-07-30 Ultrahigh frequency power amplifying device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202021547238.3U CN212572483U (en) 2020-07-30 2020-07-30 Ultrahigh frequency power amplifying device

Publications (1)

Publication Number Publication Date
CN212572483U true CN212572483U (en) 2021-02-19

Family

ID=74632161

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202021547238.3U Expired - Fee Related CN212572483U (en) 2020-07-30 2020-07-30 Ultrahigh frequency power amplifying device

Country Status (1)

Country Link
CN (1) CN212572483U (en)

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Granted publication date: 20210219

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