CN105281671A - Millimeter wave and terahertz high-order frequency multiplier adopting avalanche diode - Google Patents
Millimeter wave and terahertz high-order frequency multiplier adopting avalanche diode Download PDFInfo
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- CN105281671A CN105281671A CN201410260773.3A CN201410260773A CN105281671A CN 105281671 A CN105281671 A CN 105281671A CN 201410260773 A CN201410260773 A CN 201410260773A CN 105281671 A CN105281671 A CN 105281671A
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Abstract
The invention discloses a millimeter wave and terahertz high-order frequency multiplier adopting an avalanche diode. A micro-strip transmission line A is connected with one end of a blocking capacitor C; the other end of the blocking capacitor C is connected to one end of a spiral compact micro-strip resonant unit with double-sector stubs through a micro-strip transmission line B; the other end of the spiral compact micro-strip resonant unit with double-sector stubs is connected with one end of a parallel-grounded avalanche diode through a micro-strip transmission line C and a welding metal strip B; the other end of the avalanche diode is connected with a transmission waveguide through a welding metal strip A, an impedance linear-gradient micro-strip transmission line and a micro-strip probe; and the micro-strip line B is further connected with a direct-current bias circuit. According to the millimeter wave and terahertz high-order frequency multiplier, the working frequency of frequency multiplication input signals can be reduced effectively, the cost of system equipment can be reduced, and the stability can be improved.
Description
Technical field
The present invention relates to millimeter-wave technology field, particularly relate to a kind of millimeter and involve Terahertz High Degree Frequency Multiplier.
Background technology
Usually the frequency multiplier frequency multiplication number of times based on Schottky diode is no more than 5 times.Involving Terahertz frequency range at millimeter, involving the signal of Terahertz frequency range to obtain millimeter, then need to amplify link by multistage frequency multiplication and realize, need frequency multiplication to amplify the Circuit Matching filter and amplification of link inter-stage, circuit structure is complicated, and poor stability, realizes difficulty large.
P.A.Rolland is at IEEETransactionsonMicrowaveTheoryandTechniques, 24 (11), pp.768-775, the theory that a kind of harmonic wave utilizing avalanche diode to produce realizes frequency multiplication and up-conversion is proposed in the document of 1976 " Newmodesofoperationforavalanchediodesfrequencymultiplica tionandup-conversion " by name, and in design example, give a result based on Ka wave band snowslide diode No. 11 frequency multipliers of wave-guide cavity wave structure, but do not provide the generalized design method utilizing avalanche diode to realize high order frequency, especially the method for designing of the avalanche diode High Degree Frequency Multiplier of planar microstrip structure is adopted.
The present inventor is at ProgressInElectromagneticsResearchLetters, No.36:, pp.77-86, a kind of structure of the compact resonant element of spiral shaped microstrip (SCMRC) with biparting shape detail was proposed in 2013 " Compactlowpassfilterwithwidestopbandusingnoveldouble-fol dedSCMRCstructurewithparallelopen-endedstub " documents by name, this structure has good low-pass filter effect, in passband, loss is little, there is very wide stop band frequency range, and parasitic passband is away from operating frequency.The compact resonant element of spiral shaped microstrip (SCMRC) circuit size with biparting shape detail is little, and can be used as accurate integrated package to be used in neatly in functional circuit, realize to need signal transmission by and suppress effective suppression of signal to needing, but do not propose how it is applied in millimeter in the publication and involved in the avalanche diode High Degree Frequency Multiplier of Terahertz frequency range.
Because the technical limit spacing millimeter adopting existing multistage frequency multiplication to amplify link involves the mode of terahertz signal, manufacturing cost and use cost are all higher, and circuit structure is complicated, poor stability.Communicate under growing background so involve Terahertz at current millimeter, the frequency multiplication of prior art is amplified link and has been difficult to meet user and reduces costs and the requirement improving job stability.
Summary of the invention
The present invention aims to provide a kind of millimeter of avalanche diode that adopts and involves Terahertz High Degree Frequency Multiplier, amplifies link, effectively reduce the operating frequency of frequency multiplication input signal further, reduce system equipment cost and improve stability in order to replace existing frequency multiplication.
For achieving the above object, the present invention realizes by the following technical solutions:
The millimeter of employing avalanche diode disclosed by the invention involves Terahertz High Degree Frequency Multiplier, microstrip transmission line A connects one end of capacitance C, the other end of described capacitance C passes through one end of the compact resonant element of spiral shaped microstrip of microstrip transmission line B connecting band biparting shape detail, the other end of the compact resonant element of spiral shaped microstrip of described band biparting shape detail is by microstrip transmission line C, welding gold ribbon B connects one end of the avalanche diode of earth, the other end of described avalanche diode is by welding gold ribbon B, impedance linear gradient microstrip transmission line, microstrip probe connects transmission waveguide, microstrip transmission line B also connects DC bias circuit.
The circuit size of the compact resonant element of spiral shaped microstrip (SCMRC) of adjustment belt biparting shape detail, the low-loss of frequency multiplication input signal can either be effectively impelled to pass through, the reactive load presented in the harmonic frequency of snowslide pipe generation can be adjusted again flexibly, the harmonic energy that reflection and suppression are leaked in frequency multiplication input circuit, realize the recycling of harmonic frequency energy, thus improve shg output power and efficiency.
Preferably, described DC bias circuit comprises high resistant line and single fan-shaped detail, and described microstrip transmission line B connects high resistant line.
Preferably, the characteristic impedance of described microstrip transmission line A, B, C is 50 ohm.
Preferably, described capacitance C is microband paste electric capacity.
The present invention is applicable to millimeter and involves terahertz wave band, and the frequency multiplication that can replace prior art amplifies link, effectively reduces the operating frequency of frequency multiplication input signal further, reduces system equipment cost and improves stability.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is the structure chart of the compact resonant element of spiral shaped microstrip being with biparting shape detail;
Fig. 3 is the typical transmission performance plot of the compact resonant element of spiral shaped microstrip being with biparting shape detail;
Fig. 4 is the output spectrum figure of invention near 110GHz;
In figure: 1-microstrip transmission line A, 2-microstrip transmission line B, 3-compact resonant element of spiral shaped microstrip with biparting shape detail, 4-microstrip transmission line C, 5-impedance linear gradient microstrip transmission line, 6-transmission waveguide, 7-avalanche diode, 8-weld gold ribbon A, 9-high resistant line, 10-DC bias circuit, 11-microstrip probe, the mono-fan-shaped detail of 12-, 13-welding gold ribbon B.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with accompanying drawing, the present invention is further elaborated.
As shown in Figure 1, the millimeter of employing avalanche diode disclosed by the invention involves Terahertz High Degree Frequency Multiplier, microstrip transmission line A1 connects one end of capacitance C, capacitance C is microstrip capacitor, the other end of capacitance C passes through one end of the compact resonant element 3 of spiral shaped microstrip of microstrip transmission line B2 connecting band biparting shape detail, the other end of the compact resonant element 3 of the spiral shaped microstrip with biparting shape detail is by microstrip transmission line C4, welding gold ribbon B13 connects one end of the avalanche diode 7 of earth, the other end of avalanche diode 7 is by welding gold ribbon A8, impedance linear gradient microstrip transmission line 5, microstrip probe 11 connects transmission waveguide 6, frequency-doubled signal exports from the flange face of transmission waveguide 6, microstrip transmission line B2 also connects the DC bias circuit 10 including high resistant line 9 and single fan-shaped detail 12, and microstrip transmission line B2 connects high resistant line 9, and the characteristic impedance of microstrip transmission line A1, B2, C4 is 50 ohm.
In the present embodiment, frequency multiplication input circuit and DC bias circuit are produced on the Rogers 4350B substrate that substrate thickness is 0.508mm, and frequency multiplication output circuit is produced on Rogers 5880 substrate that thickness is 0.127mm.Frequency multiplication input signal fin inputs 50 ohm microstrip transmission line A1 from a times frequency input terminal for left end, after 90 degree of microstrip line bent angles, by capacitance C, transferring to through 50 ohm microstrip transmission line B2 is with in the compact resonant element of spiral shaped microstrip (SCMRC) 3 low-pass filter circuit of biparting shape detail, after SCMRC structure, through one section of 50 ohm microstrip transmission line C4, be fed in the avalanche diode 7 of earth finally by welding gold ribbon B13.
One section of DC bias circuit 10 with low-frequency filter characteristics be made up of high resistant line 9 and single fan-shaped detail 12 is connected with the 50 ohm microstrip transmission line B2 be arranged between frequency multiplication input circuit capacitance C and the compact resonant element of spiral shaped microstrip (SCMRC) 3 of the biparting shape detail of band, realize transmission bias direct current, and effectively suppress frequency multiplication input signal, prevent frequency multiplication input signal from leaking in DC bias circuit, at utmost guarantee that frequency multiplication input signal is effectively fed in avalanche diode 7.
If frequency multiplier frequency multiplication number of times is N, then frequency input signal is the 1/N of output signal frequency.Such as frequency multiplication number of times is 17, then frequency input signal is then 1/17 of output signal frequency.
Frequency multiplication output circuit is made up of to waveguide transition two parts one section of impedance linear gradient microstrip line and microstrip probe.The linear transition line 5 of impedance is connected with the avalanche diode 7 of earth by gold ribbon welding B13, realizes the impedance of avalanche diode 7 on frequency multiplication output frequency and mates with the impedance transformation between 50 ohm microstrip; Microstrip probe transition then realizes frequency multiplication to output signal from microstrip transmission line low-loss switch transition to transmission waveguide, finally realizes the output of frequency-doubled signal.
Because the compact resonant element of spiral shaped microstrip (SCMRC) 3 with biparting shape detail in frequency multiplication input circuit can low-loss transmission frequency multiplication input signal, the each harmonic simultaneously suppressing avalanche diode 7 to produce leaks in frequency multiplication input circuit, the reflection realizing harmonic energy is recycled, therefore avalanche diode High Degree Frequency Multiplier of the present invention can obtain higher shg efficiency, and obtains higher shg output power.
As shown in Figure 2, the concrete structure parameter of the compact resonant element of spiral shaped microstrip of the band biparting shape detail of the present embodiment employing is as table 1:
Table 1
| Structure variable | W50 | W | W1 | W2 |
| Structured value (mm) | 1.1 | 4.8 | 0.21 | 0.25 |
| Structure variable | L1 | L2 | L3 | L4 |
| Structured value (mm) | 6.95 | 7.55 | 8.75 | 1.72 |
Fig. 3 reflects that the compact resonant element of spiral shaped microstrip of the band of the present embodiment biparting shape detail has good low-pass filtering performance.
Fig. 4 reflects the output characteristic near the present embodiment 110GHz, and the maximum shg efficiency of No. 17 frequency multipliers reaches 5%, and the power output near 110GHz reaches 10dBm (10mW); Its frequency characteristic and output bandwidth meet the requirement that millimeter involves the High Degree Frequency Multiplier of Terahertz frequency range.
Meanwhile, because the frequency multiplication number of times of frequency multiplier in the present invention is very high, usual frequency multiplication number of times is 13-17 time, and therefore make the frequency of frequency multiplication input signal greatly reduce, performance improves greatly, and cost effectively reduces and is easy to obtain.This avalanche diode High Degree Frequency Multiplier can be used in transmitting that millimeter involves Terahertz frequency range or receiving system equipment, such as, working in the high-speed wideband wireless communication system etc. near 110GHz frequency.
Certainly; the present invention also can have other various embodiments; when not deviating from the present invention's spirit and essence thereof; those of ordinary skill in the art can make various corresponding change and distortion according to the present invention, but these change accordingly and are out of shape the protection range that all should belong to the claim appended by the present invention.
Claims (4)
1. adopt the millimeter of avalanche diode to involve Terahertz High Degree Frequency Multiplier, it is characterized in that: microstrip transmission line A connects one end of capacitance C, the other end of described capacitance C passes through one end of the compact resonant element of spiral shaped microstrip of microstrip transmission line B connecting band biparting shape detail, the other end of the compact resonant element of spiral shaped microstrip of described band biparting shape detail is by microstrip transmission line C, welding gold ribbon B connects one end of the avalanche diode of earth, the other end of described avalanche diode is by welding gold ribbon A, impedance linear gradient microstrip transmission line, microstrip probe connects transmission waveguide, microstrip transmission line B also connects DC bias circuit.
2. the millimeter of employing avalanche diode according to claim 1 involves Terahertz High Degree Frequency Multiplier, it is characterized in that: described DC bias circuit comprises high resistant line and single fan-shaped detail, and described microstrip transmission line B connects high resistant line.
3. the millimeter of employing avalanche diode according to claim 1 involves Terahertz High Degree Frequency Multiplier, it is characterized in that: the characteristic impedance of described microstrip transmission line A, B, C is 50 ohm.
4. the millimeter of employing avalanche diode according to claim 1 involves Terahertz High Degree Frequency Multiplier, it is characterized in that: described capacitance C is microband paste electric capacity.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410260773.3A CN105281671A (en) | 2014-06-12 | 2014-06-12 | Millimeter wave and terahertz high-order frequency multiplier adopting avalanche diode |
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| CN201410260773.3A CN105281671A (en) | 2014-06-12 | 2014-06-12 | Millimeter wave and terahertz high-order frequency multiplier adopting avalanche diode |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105932392A (en) * | 2016-05-13 | 2016-09-07 | 电子科技大学 | Broadband filtering type power divider |
| CN108449052A (en) * | 2018-05-25 | 2018-08-24 | 成都英微特微波技术有限公司 | A kind of W-waveband High Degree Frequency Multiplier |
| CN110311628A (en) * | 2019-06-14 | 2019-10-08 | 成都理工大学 | Based on the graphene even-order harmonic frequency multiplier and design method under direct current biasing |
| CN111884596A (en) * | 2020-08-26 | 2020-11-03 | 中国电子科技集团公司第四十一研究所 | Terahertz harmonic mixer based on compact ultra-wide band out-of-band rejection low-pass filtering |
-
2014
- 2014-06-12 CN CN201410260773.3A patent/CN105281671A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105932392A (en) * | 2016-05-13 | 2016-09-07 | 电子科技大学 | Broadband filtering type power divider |
| CN108449052A (en) * | 2018-05-25 | 2018-08-24 | 成都英微特微波技术有限公司 | A kind of W-waveband High Degree Frequency Multiplier |
| CN110311628A (en) * | 2019-06-14 | 2019-10-08 | 成都理工大学 | Based on the graphene even-order harmonic frequency multiplier and design method under direct current biasing |
| CN110311628B (en) * | 2019-06-14 | 2023-03-24 | 成都理工大学 | Graphene even harmonic frequency multiplier based on direct current bias and design method |
| CN111884596A (en) * | 2020-08-26 | 2020-11-03 | 中国电子科技集团公司第四十一研究所 | Terahertz harmonic mixer based on compact ultra-wide band out-of-band rejection low-pass filtering |
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Application publication date: 20160127 |