CN212560517U - Quartz tube reaction chamber with preheating function - Google Patents
Quartz tube reaction chamber with preheating function Download PDFInfo
- Publication number
- CN212560517U CN212560517U CN202020845224.3U CN202020845224U CN212560517U CN 212560517 U CN212560517 U CN 212560517U CN 202020845224 U CN202020845224 U CN 202020845224U CN 212560517 U CN212560517 U CN 212560517U
- Authority
- CN
- China
- Prior art keywords
- heating furnace
- reaction chamber
- quartz tube
- tube reaction
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model discloses a quartz capsule reaction chamber with preheat function, it includes quartz capsule reaction chamber, first heating furnace and second heating furnace, first heating furnace sets up the one end at quartz capsule reaction chamber length direction, first heating furnace has the cavity that extends along its axial, the tip that the quartz capsule reaction chamber was kept away from to first heating furnace is provided with at least one intake pipe, the intake pipe passes through first heating furnace and extends to quartz capsule reaction chamber inside, the intake pipe is connected with external air source, first heating furnace is used for heating the interior gas of intake pipe; the second heating furnace is arranged outside the quartz tube reaction chamber, and a distance is kept between the second heating furnace and the first heating furnace. The utility model discloses a quartz capsule reaction chamber with preheat function heats process gas through heating process gas in advance for process gas temperature promotes to be close with quartz capsule reaction intracavity portion boron diffusion technology assigned temperature, reduces quartz capsule reaction intracavity portion temperature fluctuation scope, reduces the warm area difference in temperature and fluctuates, accelerates reaction rate.
Description
Technical Field
The utility model relates to a silicon chip preparation field especially relates to a quartz capsule reaction chamber with preheat function.
Background
The price of the crystalline silicon solar cell products is greatly reduced along with the years to promote the technical development of high-efficiency and low-cost solar cells, and the conventional technical development of the crystalline silicon solar cell products reaches the bottleneck stage. The industry focuses on that a hot spot gradually turns to an N-pert battery with a double-sided fine grid line structure, the N-pert battery has the characteristics of low cost and high efficiency, and the N-type crystalline silicon battery has the natural advantages of few photons, no light-induced attenuation, long service life, small temperature coefficient, good weak light response and the like. The formation of the back field and P-N junction is a critical step in obtaining a high efficiency cell in an N-pert structure. The P-N junction is formed by doping boron atoms in production, wherein the most common method is to directly dope BBr3Or BCl3The source heat is diffused into the N-type silicon wafer.
Preparing an emitter and a back field by two high-temperature processes, heating for the first time until the diffusion temperature is reached, introducing a boron source (process gas), depositing a certain amount of impurity source on the surface of the silicon wafer, and forming an initial diffusion depth; stopping introducing the boron source, propelling impurity atoms deposited on the surface of the silicon wafer and forming initial diffusion at the diffusion temperature, and continuing the diffusion process of the impurities. The temperature difference between the process gas to be reacted and the quartz tube reaction cavity is large, so that the temperature difference fluctuation of a temperature zone of the process gas which is contacted firstly is large, the initial diffusion environment is different, and the performance of the battery is influenced.
The gas inlet mode at the present stage is that the process gas (the gas source temperature is 10-20 ℃) directly enters the quartz tube, the pre-deposition temperature is about 800-; the local temperature change is large, a high-precision temperature control system is needed to be adopted for a corresponding temperature area, and the cost is high.
SUMMERY OF THE UTILITY MODEL
In order to solve the problem that exists among the prior art, the utility model provides a quartz capsule reaction chamber with preheat function reduces quartz capsule reaction intracavity portion temperature fluctuation range, reduces the warm area difference in temperature and fluctuates for reaction rate, technical scheme is as follows:
the utility model provides a quartz capsule reaction chamber with preheat function, it includes quartz capsule reaction chamber, first heating furnace and second heating furnace, first heating furnace sets up the one end at quartz capsule reaction chamber length direction, first heating furnace has along its axially extended cavity, the tip that quartz capsule reaction chamber was kept away from to first heating furnace is provided with at least one intake pipe, the intake pipe extends to quartz capsule reaction chamber inside through first heating furnace, the intake pipe is connected with external air source, first heating furnace is used for heating the interior gas of intake pipe; the second heating furnace is arranged outside the quartz tube reaction cavity, and a distance is kept between the second heating furnace and the first heating furnace.
Further, first heating furnace includes a plurality of heating plates or heater strip, heating plate or heater strip are used for providing heat in the cavity of first heating furnace.
Further, a temperature sensor is arranged in the first heating furnace and used for detecting the temperature in the cavity of the first heating furnace.
Furthermore, heat insulation supporting blocks are arranged outside two ends of the first heating furnace along the length direction.
Further, the thermally insulating support block is made of polycrystalline mullite.
Further, the temperature sensor is a thermocouple, and the quartz tube reaction chamber with the preheating function further comprises a control mechanism connected with the thermocouple.
Furthermore, the end part of the quartz tube reaction cavity, which is provided with the air inlet pipe, is provided with an air outlet pipe.
Further, the first heating furnace and the second heating furnace are both of cylindrical structures.
Further, the second heating furnace comprises a plurality of heating sheets or heating wires, and the heating sheets or the heating wires are used for providing heat for the cavity of the quartz tube reaction cavity.
The utility model provides a beneficial effect that technical scheme brought as follows:
a. the quartz tube reaction chamber with the preheating function of the utility model heats the process gas in advance, so that the temperature of the process gas is raised to be close to the designated temperature of the boron diffusion process in the quartz tube reaction cavity, the temperature fluctuation range in the quartz tube reaction cavity is reduced, the temperature difference fluctuation of a temperature zone is reduced, and the reaction speed is accelerated; the reaction preheating time of the process gas in the reaction cavity of the quartz tube is shortened; the initial diffusion environment is stable, the manufacturing quality of the silicon wafer is improved, and the performance of a battery manufactured by the silicon wafer at the later stage is further ensured;
b. the utility model discloses a quartz capsule reacting chamber with preheat function reduces cascade temperature control system and chooses precision for use, reduce the cost.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a cross-sectional view of a quartz tube reaction chamber with preheating function according to an embodiment of the present invention.
Wherein the reference numerals include: 1-quartz tube reaction chamber, 2-first heating furnace, 3-second heating furnace, 4-gas inlet pipe, 5-thermocouple, 6-heat insulation supporting block and 7-gas outlet pipe.
Detailed Description
In order to make the technical solution of the present invention better understood, the technical solution of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts shall belong to the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, apparatus, article, or device that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or device.
The utility model discloses an embodiment provides a quartz capsule reaction chamber with preheat function, and specific structure refers to FIG. 1, and it includes quartz capsule reaction chamber 1, first heating furnace 2 and second heating furnace 3, first heating furnace 2 sets up the one end at quartz capsule reaction chamber 1 length direction, first heating furnace 2 has along its axially extended cavity, the tip that quartz capsule reaction chamber 1 was kept away from to first heating furnace 2 is provided with at least one intake pipe 4, intake pipe 4 is rectangular shape tubular structure, intake pipe 4 extends to quartz capsule reaction chamber 1 inside through first heating furnace 2, promptly intake pipe 4 stretches into first heating furnace 2 earlier, extends to quartz capsule reaction chamber 1 inside again, the exit end of intake pipe 4 is inside quartz capsule reaction chamber 1. The gas inlet pipe 4 is connected with an external gas source, external gas enters the quartz tube reaction chamber 1 through the gas inlet pipe 4, a gas inlet of the gas inlet pipe 4 is indicated as a in fig. 1, and the diffusion direction of process gas in the quartz tube reaction chamber 1 is indicated as an arrow in fig. 1. The first heating furnace 2 is used for heating the gas in the gas inlet pipe 4, and when the temperature in the first heating furnace 2 rises, the temperature in the gas inlet pipe 4 correspondingly rises.
The first heating furnace 2 comprises a plurality of heating sheets or heating wires, and the heating sheets or the heating wires are heated by being connected with a power supply to provide heat for the cavity of the first heating furnace 2.
The reaction chamber comprises a first heating furnace 2, a temperature sensor, a thermocouple 5, a control mechanism and a control mechanism, wherein the temperature sensor is arranged in the first heating furnace 2, the temperature sensor is preferably a thermocouple 5, the quartz tube reaction chamber with the preheating function further comprises the control mechanism connected with the thermocouple 5, the thermocouple 5 is used for detecting the temperature in the cavity of the first heating furnace 2 in real time and sending a detection result to the control mechanism, the control mechanism adjusts the temperature in the first heating furnace 2 according to the detection result of the thermocouple 5, so that the temperature in the first heating furnace 2 reaches a preset temperature, and if the temperature in the first heating furnace 2 reaches the preset temperature, heating is stopped and the constant temperature is kept; and if the temperature in the first heating furnace 2 is lower than the preset temperature, continuing heating until the preset temperature is reached.
Further, heat insulation supporting blocks 6 are arranged outside two ends of the first heating furnace 2 in the length direction, and the heat insulation supporting blocks 6 are made of polycrystalline mullite. The heat insulation support block 6 plays a heat insulation role to prevent heat of the first heating furnace 2 from being dissipated, and plays a role in supporting the first heating furnace 2. And the heat insulation supporting block 6 is provided with an opening for the air inlet pipe to enter the first heating furnace 2 through the opening. The heat insulation supporting block 6 is of an annular structure, and the diameter of the circle of the outer ring of the heat insulation supporting block is the same as that of the excircle of the first heating furnace 2.
The second heating furnace 3 is arranged outside the quartz tube reaction chamber 1, and a distance is kept between the second heating furnace 3 and the first heating furnace 2. The silicon wafer to be processed is arranged in the cavity of the quartz tube reaction cavity 1, the process gas is introduced into the cavity, and the silicon wafer is activated by heat energy under lower pressure to be subjected to thermal decomposition or chemical reaction and deposited on the surface of the silicon wafer to form a required film (the pre-deposition temperature is about 800-. The second heating furnace 3 has a cavity extending along the axial direction thereof, the quartz tube reaction chamber 1 is arranged in the cavity of the second heating furnace 3, the second heating furnace 3 comprises a plurality of heating sheets or heating wires, and the heating sheets or the heating wires are utilized for heating, so as to provide heat in the cavity of the quartz tube reaction chamber 1.
The first heating furnace 2 and the second heating furnace 3 are preferably cylindrical structures, and processing and production are facilitated.
The end part of the quartz tube reaction chamber 1 provided with the gas inlet pipe 4 is provided with a gas outlet pipe 7, gas after the deposition reaction is finished is discharged through the reaction gas outlet pipe 7, and the gas outlet of the gas outlet pipe 7 is referred to as b in fig. 1. The air outlet pipe 7 and the air inlet pipe are preferably arranged in parallel.
The utility model provides a quartz capsule reaction chamber with preheat function's concrete implementation mode as follows: the first heating furnace 2 is preheated, the process gas is conveyed into the gas inlet pipe after reaching a certain temperature, the temperature of the process gas is raised to be close to the specified temperature of the boron diffusion process in the quartz tube reaction cavity, the heated process gas enters the quartz tube reaction cavity and flows to the silicon wafer, and the subsequent doping process is carried out.
The gas inlet mode at the present stage is that process gas (such as gas source temperature is 10-20 ℃) directly enters the quartz tube reaction cavity, the deposition temperature in the quartz tube reaction cavity is higher (such as about 800-; the process gas enters the heating furnace and then sequentially passes through each temperature zone, the temperature of the last temperature zone is raised to the required temperature (namely the temperature specified by the boron diffusion process in the quartz tube reaction chamber), and the process gas passes through each temperature zone, so that the required heating time is longer. The first heating furnace is arranged and can heat the process gas in advance, so that the temperature of the process gas is raised to be close to the specified temperature of the boron diffusion process in the quartz tube reaction cavity, the temperature fluctuation range in the quartz tube reaction cavity is reduced, and the reaction speed is accelerated; the reaction preheating time of the process gas in the reaction cavity of the quartz tube is shortened; the selection precision of the cascade temperature control system is reduced, and the cost is reduced.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included within the protection scope of the present invention.
Claims (9)
1. The quartz tube reaction chamber with the preheating function is characterized by comprising a quartz tube reaction chamber (1), a first heating furnace (2) and a second heating furnace (3), wherein the first heating furnace (2) is arranged at one end of the quartz tube reaction chamber (1) in the length direction, the first heating furnace (2) is provided with a cavity extending along the axial direction of the first heating furnace, at least one air inlet pipe (4) is arranged at the end part, far away from the quartz tube reaction chamber (1), of the first heating furnace (2), the air inlet pipe (4) extends towards the interior of the quartz tube reaction chamber (1) through the first heating furnace (2), the air inlet pipe (4) is connected with an external air source, and the first heating furnace (2) is used for heating air in the air inlet pipe (4); the second heating furnace (3) is arranged outside the quartz tube reaction cavity (1) and keeps a distance with the first heating furnace (2).
2. The quartz tube reaction chamber with preheat function according to claim 1, wherein the first heating furnace (2) comprises a plurality of heating plates or heating wires for providing heat to the cavity of the first heating furnace (2).
3. The quartz tube reaction chamber with the preheating function according to claim 1, wherein a temperature sensor is arranged in the first heating furnace (2), and the temperature sensor is used for detecting the temperature in the cavity of the first heating furnace (2).
4. The quartz tube reaction chamber with the preheating function according to claim 1, wherein the first heating furnace (2) is provided with heat insulation support blocks (6) at both ends in the length direction.
5. The quartz tube reaction chamber with preheat function according to claim 4, wherein the thermally insulating support block (6) is made of polycrystalline mullite.
6. The quartz tube reaction chamber with the preheating function as claimed in claim 3, wherein the temperature sensor is a thermocouple (5), and the quartz tube reaction chamber with the preheating function further comprises a control mechanism connected with the thermocouple (5).
7. The quartz tube reaction chamber with the preheating function according to claim 1, wherein the end of the quartz tube reaction chamber (1) provided with the gas inlet tube (4) is provided with a gas outlet tube (7).
8. The quartz tube reaction chamber with preheat function according to claim 1, wherein the first heating furnace (2) and the second heating furnace (3) are both cylindrical structures.
9. The quartz tube reaction chamber with preheat function according to claim 1, wherein the second heating furnace (3) comprises a plurality of heating sheets or heating wires for providing heat to the inside of the quartz tube reaction chamber (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020845224.3U CN212560517U (en) | 2020-05-20 | 2020-05-20 | Quartz tube reaction chamber with preheating function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020845224.3U CN212560517U (en) | 2020-05-20 | 2020-05-20 | Quartz tube reaction chamber with preheating function |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212560517U true CN212560517U (en) | 2021-02-19 |
Family
ID=74623668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020845224.3U Active CN212560517U (en) | 2020-05-20 | 2020-05-20 | Quartz tube reaction chamber with preheating function |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212560517U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115094521A (en) * | 2022-06-27 | 2022-09-23 | 中南大学 | Boron diffusion reaction system and process method thereof |
-
2020
- 2020-05-20 CN CN202020845224.3U patent/CN212560517U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115094521A (en) * | 2022-06-27 | 2022-09-23 | 中南大学 | Boron diffusion reaction system and process method thereof |
| CN115094521B (en) * | 2022-06-27 | 2023-12-19 | 中南大学 | Boron diffusion reaction system and process method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| McCann et al. | A review of thin-film crystalline silicon for solar cell applications. Part 1: Native substrates | |
| CN103618028B (en) | A kind of method and equipment preparing PN knot and the crystal silicon solar energy battery with surface passivation | |
| CN212560517U (en) | Quartz tube reaction chamber with preheating function | |
| JP2016076709A (en) | Substrate of solar cell | |
| RU2008142471A (en) | INCREASING THE PRODUCTIVITY OF DEPOSIT OF POLYSILICON IN THE REACTOR OF CHEMICAL DEPOSITION FROM VAPOR PHASE | |
| TW200903820A (en) | Method, apparatus and system of manufacturing solar cell | |
| TW201110396A (en) | Diffusion furnaces employing ultra low mass transport systems and methods of wafer rapid diffusion processing | |
| CN101414647A (en) | Diffusion method for high-efficiency solar battery local depth junction | |
| CN104882516A (en) | High-temperature low-pressure method for silicon wafer diffusion | |
| US20150206990A1 (en) | Solar cell production method, and solar cell produced by same production method | |
| CN203871351U (en) | Structure capable of diffusing reaction gas of boron diffusion furnace uniformly | |
| CN203869512U (en) | Adhesion-preventing self-heating furnace door of boron diffusion furnace | |
| CN102299204B (en) | Boat discharging method for use in solar cell diffusing technology | |
| CN103014838B (en) | A kind of vertical pulling preparation method of ultra thin single crystalline silicon chip | |
| CN201044516Y (en) | Tubular shaped carbon fiber electro-heat core energy-saving quartz electric heating tube | |
| CN114695598B (en) | Preparation method and application of crystalline silicon solar cell with shallow junction diffusion emitter | |
| EP2401415B1 (en) | Apparatus for manufacture of solar cells | |
| CN203869511U (en) | Adhesion-preventing reaction gas self-heating furnace door of boron diffusion furnace | |
| CN211529964U (en) | Annealing furnace with auxiliary heating device | |
| CN113745411A (en) | Perovskite solar cell in-situ annealing film forming device | |
| CN104157592B (en) | A kind of technique for increasing silicon based hetero-junction solar cell production capacity | |
| CN201044517Y (en) | Bandlet carbon fiber spiral electro-heat core energy-saving quartz electric heating tube | |
| CN112071953A (en) | Method and device for preparing passivated contact solar cell by plate-type equipment | |
| CN113066896A (en) | Preparation method of solar cell emitter junction | |
| CN111354839A (en) | Heating control method of annealing furnace and annealing furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |