CN212365965U - Fast recovery rectifier diode module - Google Patents
Fast recovery rectifier diode module Download PDFInfo
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- CN212365965U CN212365965U CN202020963873.3U CN202020963873U CN212365965U CN 212365965 U CN212365965 U CN 212365965U CN 202020963873 U CN202020963873 U CN 202020963873U CN 212365965 U CN212365965 U CN 212365965U
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- 238000011084 recovery Methods 0.000 title claims abstract description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052802 copper Inorganic materials 0.000 claims abstract description 42
- 239000010949 copper Substances 0.000 claims abstract description 42
- 238000000605 extraction Methods 0.000 claims abstract description 22
- 239000000919 ceramic Substances 0.000 claims description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 238000004857 zone melting Methods 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 abstract description 4
- 238000003466 welding Methods 0.000 description 19
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- 238000013461 design Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 230000002035 prolonged effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
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- 239000002131 composite material Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
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- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model relates to a fast recovery rectifier diode module, including the red copper bottom plate, set up the shell on the red copper bottom plate, shell middle part and red copper bottom plate cooperation constitute a cavity, are located to be provided with on the red copper bottom plate in the cavity and cover the copper potsherd, cover the copper potsherd and be provided with a set of extraction electrode and two chips according to fast recovery module circuit on the copper potsherd, the shell inner wall corresponds each extraction electrode and is provided with a direction card hole respectively. The utility model discloses can effectively solve and realize the fixed of leading out the electrode through epoxy in the current fast recovery rectifier diode module, have the dress ratio more complicated, with high costs, equip inconvenient problem.
Description
Technical Field
The utility model relates to a fast recovery rectifier diode module.
Background
With the gradual maturity of the scientific research and production of the traditional components, the technology of the electronic components is being updated, upgraded and developed by a new material, a new process and a new technology, and the electronic components are mainly improved by mainly meeting the characteristic requirements of the development of the digital technology and the microelectronic technology and are in a complete set to meet the development stage from the original improvement mainly adapting to the miniaturization of the whole machine and the new process requirements. The volume of the existing electronic equipment and information system is smaller and smaller, the circuit density is higher and higher, the transmission speed is faster and faster, and the chip type and miniaturization become one of the important marks for measuring the development level of electronic components.
In the prior art, the fixing of the leading-out electrode is realized through epoxy resin in the fast recovery rectifier diode module, and the assembling mode has the problems of complex assembling ratio, overhigh cost and inconvenient equipment.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a be a fast recovery rectifier diode module, realize the fixed of leading out the electrode through epoxy in solving current fast recovery rectifier diode module, have the dress ratio more complicated, with high costs, equip inconvenient problem.
The utility model provides a technical scheme that its technical problem adopted is: the utility model provides a fast recovery rectifier diode module, includes red copper bottom plate, sets up the shell on red copper bottom plate, and the cooperation of shell middle part and red copper bottom plate constitutes a cavity, is provided with the copper-clad potsherd on the red copper bottom plate that is located the cavity, and the copper-clad potsherd is provided with a set of extraction electrode and two chips according to fast recovery module circuit on, and the shell inner wall corresponds each extraction electrode and is provided with a direction card hole respectively.
Furthermore, the left side and the right side of the shell are respectively provided with a mounting hole, the upper part of the extraction electrode is provided with an external connection hole, the lower part of the extraction electrode, which is positioned below the external connection hole, is provided with a bendable groove, and the lower part of the extraction electrode, which is positioned below the bendable groove, is provided with a limiting convex strip matched with the guide clamping hole; the shell is a plastic part, and the limiting convex strips and the guide clamping holes which are integrally formed on the shell can be assembled and disassembled in an interference fit mode.
For the convenience of assembly, a cover plate positioning groove is arranged around the periphery of the inner side wall of the upper part of the cavity in the middle of the shell, a cover plate matched with the cover plate positioning groove is arranged on the cover plate positioning groove, and a positioning hole matched with the leading-out electrode is formed in the cover plate
In order to reduce stress, the upper part of the leading-out electrode, which is positioned at the connecting position with the copper-clad ceramic sheet, is provided with an arc-shaped bent part.
In order to reduce stress and avoid the defect that a product is easy to damage in the traditional welding mode, an aluminum wire is arranged between the chip and a copper-coated area of the copper-coated high-temperature ceramic chip in a bonding mode.
Furthermore, the aluminum wires on each chip are provided with a group, the aluminum wires on the chips are wavy, and a plurality of contact points contacted with the chips are arranged.
Furthermore, the chip is a zone-melting single crystal, passivation regions are arranged around the outer edge of the upper surface of the chip and around the outer ring of the gate point, and the passivation regions are regions formed by passivating silicon dioxide and glass powder with high melting point of 780 ℃.
Further, the chip green is welded on the ceramic chip in a resistance mode.
Further, the diameter of the aluminum wire is 0.38mm, and the bonding height of the aluminum wire is not higher than 5 mm.
Furthermore, the spacing between the aluminum wires bonded on the same chip bare chip is between 0.5mm and 1 mm; the bottom plate is a pre-bent red copper bottom plate, and the ceramic plate is vacuum-welded on the bottom plate by nitrogen.
The utility model has the advantages that: through setting up direction card hole at the auris interna, it is fixed that direct will draw forth the electrode through direction card hole location in the assembling process, has solved and has realized drawing forth the fixed of electrode through epoxy in the current fast recovery rectifier diode module, has to dress the ratio more complicated, with high costs, equips inconvenient problem. The arrangement of the limiting convex strips and the easily-bendable grooves can reduce the influence of external stress on the assembly process, prevent the product from being damaged in the assembly process and improve the yield of the product.
Drawings
Fig. 1 is a schematic structural diagram of the present invention, and the cover plate is omitted in the figure.
Detailed Description
In the embodiment, as shown in fig. 1, a fast recovery rectifier diode module includes a red copper base plate, a housing 1 disposed on the red copper base plate, a cavity 2 formed by the middle of the housing 1 and the red copper base plate, a copper-clad ceramic plate 3 disposed on the red copper base plate in the cavity 2, a set of extraction electrodes 4 and two chips 5 disposed on the copper-clad ceramic plate 3 according to a fast recovery module circuit, and a guiding hole 6 disposed on the inner wall of the housing 1 corresponding to each extraction electrode 4. The left side and the right side of the shell 1 are provided with mounting holes 12, the upper portion of the leading-out electrode 4 is provided with an external connection hole 11, a flexible groove 10 is arranged below the leading-out electrode 4 which is located at the external connection hole, a limiting convex strip 9 matched with the guide card hole 6 is arranged below the leading-out electrode 4 which is located at the flexible groove 10, the shell 1 is a plastic piece, and the limiting convex strip 9 and the guide card hole 6 which are integrally formed on the shell can be assembled and disassembled in an interference fit mode. The width of the guide card hole 6 is matched with the thickness of the extraction electrode 4. The guide clamping hole 6 is a square through hole. Realize fixedly through the cooperation of direction card hole 6 and extraction electrode 4, the main objective is to replace the current product to come fixed assembly methods through epoxy, is favorable to the environmental protection more, and the assembly process is simpler simultaneously, the operation of being convenient for. And a cover plate positioning groove 13 is arranged around the periphery of the inner side wall of the upper part of the cavity 2 in the middle of the shell 1, a cover plate matched with the cover plate positioning groove 13 is arranged on the cover plate positioning groove 13, and a positioning hole matched with the leading-out electrode 4 is arranged on the cover plate. The cover plate can adopt the conventional common structural form and is not specifically described here.
In the description of the present invention, it is to be understood that the terms "center", "lateral", "up", "down", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified. Furthermore, the term "comprises" and any variations thereof is intended to cover non-exclusive inclusions.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
The concept of the present invention is further explained below with reference to fig. 1.
The utility model provides a fast recovery rectifier diode module, including the red copper bottom plate, set up shell 1 on the red copper bottom plate, 1 middle part of shell and red copper bottom plate cooperation constitute a cavity 2, be located and be provided with copper-clad potsherd 3 on the red copper bottom plate of cavity 2, copper-clad potsherd 3 is gone up and is provided with a set of extraction electrode 4 and two chips 5 according to fast recovery module circuit, 1 inner wall of shell corresponds each extraction electrode 4 and is provided with a direction card hole 6 respectively, the upper portion of extraction electrode 4 is provided with spacing sand grip 9.
The upper part of the leading-out electrode 4, which is positioned at the connecting position with the copper-clad ceramic plate 3, is provided with an arc-shaped bending part 7. The extraction electrode 4 is integrally formed.
And an aluminum wire 8 is bonded between the chip 5 and the copper-coated area of the copper-coated high ceramic chip. The aluminum wire 8 replaces a copper sheet connecting bridge in the traditional structure to play a role in connection, and is bonded on the chip 5 and the copper-clad ceramic sheet 3 through a wire-drawing machine.
The aluminum wires 8 on each chip 5 are all provided with a group, and the aluminum wires 8 on the chips 5 are wavy and are provided with a plurality of contact points contacted with the chips 5.
The chip 5 is a zone-melting single crystal, passivation zones are arranged around the periphery of the outer edge of the upper surface of the chip and the periphery of the outer ring of the gate point, and the passivation zones are formed by passivating silicon dioxide and glass powder with high melting point of 780 ℃. The problem that products are easily damaged in the welding process because the traditional chip 5 needs to be provided with protective glue is solved.
The chip 5 green is welded on the ceramic plate (the copper-coated ceramic plate 3). The diameter of the aluminum wire 8 is 0.38mm, and the bonding height of the aluminum wire 8 is not higher than 5 mm. The spacing between the aluminum wires 8 bonded on the bare chips of the same chip 5 is 0.5mm-1 mm; the bottom plate is a pre-bent red copper bottom plate, and the ceramic plate is vacuum-welded on the bottom plate by nitrogen.
The bare chip 5 and the copper-clad area (the copper-clad area of the copper-clad ceramic sheet 3) are connected in a flexible connection mode of bonding the aluminum wire 8, so that the stress received by the chip 5 is effectively reduced, and the problems that the stress is high, the chip 5 is easy to damage and the service life is shortened due to the fact that the existing controllable connection is carried out in a bridge mode are solved. Meanwhile, the chip 5 of the existing controllable module is protected by protective glue, the temperature resistance of the chip is about 200 ℃, and the chip is easy to damage and influence the quality of a product in the module welding process; and the utility model discloses in adopt 5 bare chips of chip, it is the zone-melting single crystal, and the surface passivation adopts silica, the higher melting point of glass powder (more than 780 ℃) to protect, and about module welding temperature 220 ℃ -320 ℃ (high temperature solder), can not play the destruction to 5 protective layers of chip in the manufacturing process.
The aluminum wire 8 is bonded between the bare chip 5 and the copper-clad area in a wire-bonding mode of a wire-bonding machine, has lower hard force with the bare chip 5, and belongs to a low-stress design between the bracket and the chip 5. In the welding process of the module, because the expansion coefficients of various materials are inconsistent, great thermal stress is generated, the bare chip 5 can be damaged or the service life of the module can be reduced due to the stress, the problem is solved by the structural design of soft connection (wire bonding process) between the bracket and the chip 5 of the company, and the problem that the chip 5 is subjected to the action of external force when the module is shaped and installed is also solved, so that the qualification rate in the production process of the module is greatly improved, and the service life of the module in use is greatly prolonged.
The ceramic plate is vacuum welded on the bottom plate by nitrogen. Nitrogen (N)2) The secondary high-low temperature vacuum welding under the protection of gas, the soldering lug and the copper bottom plate with uniform impurity components ensure firm welding and no holes, the effective welding area can reach about 99 percent, the thermal resistance of the module is greatly reduced, the energy conversion efficiency of the module is improved, and the thermal fatigue strength is greatly increased.
The copper-clad region combined with the ceramic sheet may be referred to as a copper-clad ceramic sheet 3. The copper-clad ceramic sheet 3(DBC) refers to a special process in which a copper foil is directly bonded to the surface (both sides) of an alumina (AL2Q3) ceramic substrate at high temperature. The ultrathin composite substrate has excellent electrical insulation performance, high heat conduction characteristic, excellent soft solderability and high adhesion strength, can be etched into various patterns like a PCB (printed circuit board), and has great current carrying capacity. The characteristics are as follows: 1. the mechanical stress is strong, and the shape is stable; high strength, high thermal conductivity and high insulativity; the binding force is strong, and the corrosion is prevented; 2. the thermal cycle performance is excellent, the cycle frequency reaches 5 ten thousand times, and the reliability is high; 3. the structure with various patterns can be etched like a PCB (or an IMS substrate); no pollution, no public nuisance and no environmental toxicity; 4. the application temperature is-55 ℃ to 850 ℃; the thermal expansion coefficient is close to silicon, and the production process of the power module is simplified. The thermal expansion coefficient of DCB is close to that of the silicon chip 5, so that a transition layer Mo sheet can be saved, labor and materials are saved, and the cost is reduced; 6. the welding layers are reduced, the thermal resistance is reduced, the holes are reduced, and the yield is improved; the excellent thermal conductivity makes the packaging of the chip 5 very compact, thereby greatly improving the power density and improving the reliability of the system and the device; the current-carrying capacity is large, 100A current continuously passes through a copper body with the width of 1mm and the thickness of 0.3mm, and the temperature rise is about 17 ℃; the 100A current continuously passes through a copper body with the width of 2mm and the thickness of 0.3mm, and the temperature rise is only about 5 ℃; low thermal resistance, thermal resistance of 10 × 10mmDCB plate: the thermal resistance of the ceramic substrate DCB with the thickness of 0.38mm is 0.19K/W, the insulation withstand voltage is high, and the personal safety and the protection capability of equipment are guaranteed.
The number and arrangement of the copper-clad regions and the arrangement of the extraction electrodes 4 do not belong to the innovation point of the present invention, and all the copper-clad regions and the arrangement of the extraction electrodes can refer to the prior art, so that a more detailed description is not provided herein.
Regarding the pre-bent red copper soleplate: the coefficient of expansion of copper is 16.7 x 10-6V. DEG C, and Al2O3The expansion coefficient of the ceramic DBC plate is 7.1 x 10-6The difference between the two is about 3 times, and after high-temperature welding, the shrinkage size of the copper base plate is larger, while Al is larger2O3The ceramic DBC plate has small shrinkage size, so that the DBC plate is seriously bent, and plastic deformation of welding materials is caused, so that an area with poor thermal contact is generated between the ceramic DBC plate and the DBC plate, once the effect occurs, vicious cycle is generated, thermal fatigue is accelerated, and finally a module fails.
The chip 5 is a zone-melting single crystal, a passivation zone is arranged around the periphery of the outer edge of the upper surface of the chip, and the passivation zone is passivated by silicon dioxide and glass powder with high melting point of 780 ℃. The module welding temperature is about 220-320 ℃ (high-temperature solder), and the protective layer of the chip 5 cannot be damaged in the manufacturing process. The common chip 5 protective adhesive is easy to be damaged when the temperature is about 200 ℃.
This fast recovery rectifier diode module still possesses following advantage:
the high-frequency switch is suitable for the market and the customer requirements, so that the recovery time is shortened when the product passes through large current, and the overcurrent capacity and the high-frequency switch performance of the product are improved. Meanwhile, under the condition of limited volume, through the research of a semiconductor basic theory, the rapid recovery bare chip 5 and the DBC double-sided copper-clad plate AL2Q3 ceramic substrate are combined by adopting a high-vacuum sintering one-step forming technology and a pure aluminum wire 8 bonding technology, so that the effect of rapidly recovering the overlarge current of the rectifier diode module and ensuring the stable performance is achieved.
Fast recovery rectifier diode module on-state current: 60A to 1000A, inverted repeat peak voltage: 100-1200V, positive peak voltage less than 1.6V, and insulation voltage more than 2500V.
Most of the common fast recovery diode series use PN junction silicon rubber protective wafer, manual furnace and tunnel furnace welding process, the product void ratio is difficult to control, and the PN silicon rubber protective rectifying wafer can not reliably run in places with higher environmental temperature. Most of common quick recovery modules still use the technology of adding copper sheets on ceramic sheets and welding upper and lower molybdenum sheets on the copper sheets, the chip 5 has larger heat resistance, the through-flow capacity of the same module is far smaller than that of the same product in the western world, the operation is performed under the same working condition, and the reliability is far lower than that of the product in the western world.
Adopting a glass passivation bare chip 5 to resist high temperature of 780 ℃; the high vacuum sintering furnace is used for one-time welding, so that the welding is firm without holes, the effective welding area can reach about 99 percent, the thermal resistance of the product is greatly reduced, the energy conversion efficiency of the product is improved, and the thermal fatigue strength is greatly increased; low stress design between the support and the chip 5. In the welding process of the product, due to the fact that expansion coefficients of various materials are inconsistent, great thermal stress is generated, the stress can cause the chip 5 to be damaged or the service life of the module is shortened, the problem is solved by the structural design of soft connection (bonding process) between the support and the chip 5, the problem that the chip 5 is affected by external force when the product is shaped and installed is also solved, and therefore the qualification rate of the product in the production process is greatly improved and the service life of the product in use is greatly prolonged.
The product is mainly applied to industrial equipment such as a power switch, a variable frequency welding machine, a frequency converter, a UPS power supply and the like.
The above embodiments are not to be considered from a limiting point of view, but rather from an illustrative point of view. The scope of the present invention is defined by the scope of the claims, rather than the description, and all differences within the scope and equivalence thereof should be construed as being included in the present invention. Various insubstantial improvements are made by adopting the method conception and the technical proposal of the utility model; or without improvement, the above conception and technical solution of the present invention can be directly applied to other occasions, all within the protection scope of the present invention.
Claims (10)
1. The utility model provides a fast recovery rectifier diode module, includes the red copper bottom plate, sets up the shell on the red copper bottom plate, and the cooperation of shell middle part and red copper bottom plate constitutes a cavity, is provided with the copper-clad potsherd on the red copper bottom plate that is located the cavity, and the copper-clad potsherd is provided with a set of extraction electrode and two chips, its characterized in that according to fast recovery module circuit on the copper-clad potsherd: the inner wall of the shell is provided with a guide clamping hole corresponding to each extraction electrode.
2. The fast recovery rectifier diode module of claim 1, wherein: mounting holes are respectively formed in the left side and the right side of the shell, an outer connecting hole is formed in the upper portion of the extraction electrode, a bendable groove is formed below the outer connecting hole of the extraction electrode, and a limiting convex strip matched with the guide clamping hole is arranged below the bendable groove of the extraction electrode; the shell is a plastic part, and the limiting convex strips and the guide clamping holes which are integrally formed on the shell can be assembled and disassembled in an interference fit mode.
3. A fast recovery rectifier diode module according to claim 1 or 2, wherein: and a cover plate positioning groove is formed in the periphery of the inner side wall of the upper part of the cavity in the middle of the shell, a cover plate matched with the cover plate positioning groove is arranged on the cover plate positioning groove, and a positioning hole matched with the lead-out electrode is formed in the cover plate.
4. A fast recovery rectifier diode module as claimed in claim 3, wherein: the upper part of the leading-out electrode at the connecting position with the copper-clad ceramic sheet is provided with an arc-shaped bending part.
5. The fast recovery rectifier diode module of claim 4, wherein: and an aluminum wire is bonded between the chip and the copper-coated area of the copper-coated high ceramic chip.
6. The fast recovery rectifier diode module of claim 5, wherein: the aluminum wires on each chip are all provided with a set of, and the aluminum wires that are located on the chip are wavy, have a plurality of contact points with the chip contact.
7. The fast recovery rectifier diode module of claim 6, wherein: the chip is a zone-melting single crystal, passivation zones are arranged around the periphery of the outer edge of the upper surface of the chip and the periphery of the outer ring of the gate point, and the passivation zones are formed by passivating silicon dioxide and glass powder at a high melting point of 780 ℃.
8. The fast recovery rectifier diode module of claim 7, wherein: the green chip is welded on the ceramic chip in a resistance mode.
9. The fast recovery rectifier diode module of claim 8, wherein: the diameter of the aluminum wire is 0.38mm, and the bonding height of the aluminum wire is not higher than 5 mm.
10. The fast recovery rectifier diode module of claim 9, wherein: the spacing between the aluminum wires bonded on the bare chip of the same chip is 0.5mm-1 mm; the bottom plate is a pre-bent red copper bottom plate, and the ceramic plate is vacuum-welded on the bottom plate by nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020963873.3U CN212365965U (en) | 2020-05-29 | 2020-05-29 | Fast recovery rectifier diode module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020963873.3U CN212365965U (en) | 2020-05-29 | 2020-05-29 | Fast recovery rectifier diode module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212365965U true CN212365965U (en) | 2021-01-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020963873.3U Expired - Fee Related CN212365965U (en) | 2020-05-29 | 2020-05-29 | Fast recovery rectifier diode module |
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| Country | Link |
|---|---|
| CN (1) | CN212365965U (en) |
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2020
- 2020-05-29 CN CN202020963873.3U patent/CN212365965U/en not_active Expired - Fee Related
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Granted publication date: 20210115 |