CN113097159B - Silicon carbide MOSFET chip bidirectional switch power module and preparation method thereof - Google Patents

Silicon carbide MOSFET chip bidirectional switch power module and preparation method thereof Download PDF

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Publication number
CN113097159B
CN113097159B CN202110302888.4A CN202110302888A CN113097159B CN 113097159 B CN113097159 B CN 113097159B CN 202110302888 A CN202110302888 A CN 202110302888A CN 113097159 B CN113097159 B CN 113097159B
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pcb
silicon carbide
carbide mosfet
dbc
power module
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CN113097159A (en
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王来利
侯震鹏
孙立杰
赵成
裴云庆
杨旭
甘永梅
张虹
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Xian Jiaotong University
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Xian Jiaotong University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)

Abstract

The invention discloses a silicon carbide MOSFET chip bidirectional switch power module and a preparation method thereof, wherein a plurality of DBCs are transversely arranged on a copper base plate, 9 bidirectional switches are formed by the plurality of DBCs, a power loop of the DBC is led out through a power terminal, a first PCB and a second PCB are overlapped on the DBC, a driving terminal is led out by the first PCB and the second PCB in a lead bonding mode, and the 9 bidirectional switches are connected to form a topological structure of a matrix converter; the silicon carbide MOSFET chip bidirectional switch power module has the advantages of small volume, small parasitic inductance and large power density.

Description

Silicon carbide MOSFET chip bidirectional switch power module and preparation method thereof
Technical Field
The invention belongs to the technical field of power device packaging, and particularly relates to a silicon carbide MOSFET chip bidirectional switch power module and a preparation method thereof.
Background
Silicon carbide power devices are known as high voltage and high switching frequency devices, as compared to silicon devices. Silicon carbide power semiconductors have inherent advantages such as high voltage blocking capability, low on-state voltage drop, high switching speeds, and low thermal resistance. Thus, silicon carbide power devices have less conduction and switching losses and have higher operating temperatures than silicon power devices. The bidirectional switch power module based on the silicon carbide MOSFET can have higher working temperature, higher package integration and higher reliability.
The nano silver soldering paste is used as a lead-free interface connection material, and the connection of the power semiconductor chip can be realized through a low-temperature sintering technology. Because the nano silver soldering paste has the advantages of high melting point, high electrical conductivity and thermal conductivity, low process temperature and the like, the nano silver soldering paste gradually replaces the traditional solder alloy and conductive epoxy resin, and is widely applied to high-temperature power semiconductor devices.
The matrix converter is a direct conversion type ac-ac power conversion device. The most typical topology is to switch from ac three phase to ac three phase, and its input and output segments are interconnected by bi-directional switches, i.e. 9-switch matrix converters. At present, matrix converter circuits are mostly built by using discrete devices, and the power density is low.
Disclosure of Invention
The invention aims to solve the technical problems in the prior art, and provides a silicon carbide MOSFET chip bidirectional switch power module and a preparation method thereof, which have higher working frequency, better reliability, lower thermal resistance, good electrical performance, higher packaging integration level and greatly reduced size.
The invention adopts the following technical scheme:
The utility model provides a silicon carbide MOSFET chip bidirectional switch power module, includes the copper bottom plate, transversely is provided with the DBC base plate on the copper bottom plate, and the stack is provided with first PCB board and second PCB board on the DBC base plate, and first PCB board and second PCB board draw forth drive terminal through the mode of wire bonding, and the DBC base plate includes the polylith, and the power return circuit of every DBC base plate is drawn forth through power terminal, and the drain electrode of the silicon carbide MOSFET chip that sets up on all DBC base plates is connected and is constituted 9 bidirectional switch.
Specifically, the invention is also characterized in that: each bidirectional switch comprises 4 silicon carbide MOSFET chips, the 4 silicon carbide MOSFET chips are arranged on a DBC substrate, two groups of silicon carbide MOSFET chips are connected in parallel by two to realize common drain connection, and the sources of the two groups of silicon carbide MOSFET chips are led out to the corresponding source substrates through wire bonding.
Specifically, the invention is also characterized in that: the DBC substrates comprise three, the front face of each DBC substrate is provided with a first copper layer, the back face of each DBC substrate is provided with a second copper layer, and three metal substrates are arranged on the first copper layer; the copper bottom plate is correspondingly provided with a first screw hole, a second screw hole and a third screw hole.
Specifically, the invention is also characterized in that: the driving terminal is PIN needle, including 24, and power terminal is the copper sheet, including 6.
Specifically, the invention is also characterized in that: and the first PCB and the second PCB are connected by insulating glue in an isolated manner.
Specifically, the invention is also characterized in that: the driving terminal comprises a grid terminal and a source terminal, the first PCB is used for leading out the grid terminal, and the second PCB is used for leading out the source terminal.
Specifically, the invention is also characterized in that: the first PCB and the second PCB are of 4-layer structures, and the layers are partially connected through the through holes.
The invention also provides a method for preparing the silicon carbide MOSFET chip bidirectional switch power module, which comprises the following steps:
s1, printing a layer of nano silver soldering paste at corresponding positions on a DBC substrate and a copper base plate respectively, and attaching a silicon carbide MOSFET chip on the DBC substrate; attaching a DBC substrate to a copper base plate;
S2, printing nano silver soldering paste in the step S1 and completing vacuum sintering of a copper bottom plate of the patch;
s3, attaching the first PCB to the second PCB, and respectively welding PIN needles serving as driving terminals on the first PCB and the second PCB;
S4, taking out the first PCB and the second PCB which are welded in the step S3, printing a layer of insulating glue on the DBC substrate subjected to vacuum sintering treatment in the step S2, and attaching the second PCB on the insulating glue;
S5, printing a layer of nano silver soldering paste on the DBC substrate, placing a power terminal at the nano silver soldering paste, and welding to finish wire bonding from the silicon carbide MOSFET chip to an electrode area of the DBC substrate and corresponding positions of the first PCB and the second PCB;
And S6, using epoxy resin to carry out plastic package on the DBC substrate with the terminal welded in the step S5, and obtaining the silicon carbide MOSFET chip bidirectional switch power module.
Specifically, the invention is also characterized in that: in the step S2, the temperature of vacuum sintering is 25-300 ℃ and the time is 1-2 h.
Specifically, the invention is also characterized in that: in step S6, the plastic-packaged module is vacuumized, and then potting is carried out by using potting adhesive.
Compared with the prior art, the invention has at least the following beneficial effects:
According to the silicon carbide MOSFET chip bidirectional switch power module, the silicon carbide MOSFET chip arranged on the DBC substrate has higher working frequency, better reliability, lower thermal resistance and good electrical performance, the DBC substrate is transversely arranged on the copper substrate, the first PCB and the second PCB are arranged on the DBC substrate in a superposition mode, the packaging integration level is high, the size is greatly reduced, the first PCB and the second PCB are led out of the driving terminal in a wire bonding mode, the driving terminal is led out through the multi-layer PCB (vertical space of the module is utilized), the overall module size is smaller, the power loop area is smaller, and the parasitic inductance is smaller.
Furthermore, a silicon carbide MOSFET chip of 1200V/140A is used in the module, the silicon carbide chip can work for a long time at 300 ℃, and the highest temperature can reach 600 ℃; the silicon carbide chip is adopted, the module can work in a high-temperature environment, the switching frequency is higher, and the reliability is better.
Furthermore, the DBC substrate design makes the power loop shorter as much as possible, the chip layout is symmetrical, and the influence of parasitic inductance and parallel current non-uniformity is reduced.
Further, the power terminal needs to circulate high power, so that the power terminal needs to be set to be a large copper sheet, the driving is not required to be high in current, the power terminal is set to be a PIN needle, and occupied space is reduced.
Further, the first PCB and the second PCB are connected in an insulating and isolating mode, and driving short circuit is avoided.
Further, the gate terminal and the source terminal of the drive are led out separately, satisfying the kelvin connection.
Furthermore, the layout of the PCB utilizes the self-canceling effect of the magnetic field, and reduces parasitic inductance.
The preparation method of the silicon carbide MOSFET chip bidirectional switch power module comprises the steps that interconnection materials between chips and electrode terminals and a DBC substrate are nano silver soldering paste, the nano silver soldering paste has the advantages of high melting point, high electrical conductivity and thermal conductivity, low process temperature and the like, connection of a power semiconductor chip can be realized through a low-temperature sintering technology, and the nano silver soldering paste is used for vacuum sintering, so that the void ratio of chip welding can be reduced, the thermal resistance of the module is reduced, and the reliability of the module is enhanced.
Further, the temperature of vacuum sintering is 25-300 ℃ and the time is 1-2 hours, so that the sintering quality is ensured, the density is high, the hole rate is low, the process operation is simple and convenient under the vacuum sintering condition, and adverse effects of the filler on the surface of a sintered body can be avoided.
Further, plastic package glue filling is carried out on the module, and the insulating strength of the module is guaranteed.
In summary, the module of the invention has the advantages of small volume, small parasitic inductance and high power density.
The technical scheme of the invention is further described in detail through the drawings and the embodiments.
Drawings
FIG. 1 is a schematic front view of a single DBC;
FIG. 2 is a schematic diagram of a back side of a single DBC;
FIG. 3 is a schematic front view of 3 DBC arranged on a copper plate;
FIG. 4 is a schematic front view of the module after the chip is soldered to the DBC;
FIG. 5 is a schematic view of a PCB board for extracting gate terminals;
fig. 6 is a schematic view of a PCB board for extracting source terminals;
Fig. 7 is a schematic front view of the module after two PCB boards are attached;
fig. 8 is a schematic diagram of the overall structure of the present invention.
Wherein: 1. a first copper layer; 2. a second copper layer; 3. a first screw hole; 4. a second screw hole; 5. a third screw hole; 6. a silicon carbide MOSFET chip; 7. a first bonding pad; 8. a second bonding pad; 9. a third copper layer; 10. a via hole; 11. a drive terminal; 12. a power terminal; 13. a first PCB board; 14. a second PCB board; 15. a source substrate.
Detailed Description
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
It should be understood that the terms "comprises" and "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be further understood that the term "and/or" as used in the present specification and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes such combinations.
Various structural schematic diagrams according to the disclosed embodiments of the present invention are shown in the accompanying drawings. The figures are not drawn to scale, wherein certain details are exaggerated for clarity of presentation and may have been omitted. The shapes of the various regions, layers and their relative sizes, positional relationships shown in the drawings are merely exemplary, may in practice deviate due to manufacturing tolerances or technical limitations, and one skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions as actually required.
The invention provides a silicon carbide MOSFET chip bidirectional switch power module and a preparation method thereof, wherein 36 silicon carbide MOSFET chips, 2 PCBs and 3 aluminum oxide ceramic copper-clad substrates (DBC substrates) are adopted to manufacture the bidirectional switch power module, and the bidirectional switch power module is formed into a power module with a bidirectional conduction function through wire bonding, so that the bidirectional switch power module has higher working frequency, better reliability, lower thermal resistance, good electrical performance, higher packaging integration level and greatly reduced size.
Referring to fig. 8, a silicon carbide MOSFET chip bidirectional switching power module of the present invention includes: the first PCB 13, the second PCB 14, 3 aluminum oxide ceramic copper-clad substrates (DBC substrates), a copper base plate, 6 power terminals 12 and 24 driving terminals 11,3 DBCs are transversely and tightly arranged on the copper base plate to form 9 bidirectional switches, and the 6 power terminals 12 are correspondingly connected with the 3 DBC substrates; the first PCB 13 and the second PCB 14 are overlapped on 3 DBC substrates, the driving terminal 11 is led out on the PCB in a wire bonding mode, the driving terminal 11 comprises 18 grid terminals and 6 source terminals, the first PCB 13 is used for leading out the grid terminals, 36 chips are combined into a group, 18 power switches are formed, and the grids of the 18 switches are respectively connected to different positions of the first PCB 13 through wire bonding and then connected to the grid terminals. The second PCB 14 is configured to lead out source terminals, connect together 3 sources of 18 power switches, and lead out the sources to a driving source to form a topology structure of the matrix converter, so as to form a power module with bidirectional conduction capability.
Each bidirectional switch comprises 4 silicon carbide MOSFET chips 6, a chip common drain connection structure is adopted, the 4 silicon carbide MOSFET chips 6 are connected in parallel in pairs to realize common drain connection, drains of the two groups of chips are respectively led out in a wire bonding mode and connected to corresponding source substrates 15, and referring to fig. 4, the led-out mode is that one group of substrates is led to the upper side, and the other group of substrates is led to the lower side, so that the bidirectional switch is formed.
Referring to fig. 1, 2, 3 and 4, 3 DBC substrates are arranged on a copper base plate, a first copper layer 1 is arranged on the front surface of each DBC substrate, a second copper layer 2 is arranged on the back surface of each DBC substrate, three metal substrates are arranged on the first copper layer 1,4 silicon carbide MOSFET chips 6 are placed on each metal substrate, source substrates 15 and 12 silicon carbide MOSFET chips 6 are correspondingly arranged on the upper side and the lower side of each metal substrate to form 3 bidirectional switches, and the copper base plate serves as a base plate of a plastic package die and is used for heat dissipation; the copper bottom plate is correspondingly provided with a first screw hole 3, a second screw hole 4 and a third screw hole 5 for fixing the PCB driving plate, the module shell and the copper bottom plate.
24 Drive terminals 11 and 6 power terminals 12; the driving terminal 11 adopts a PIN needle, and the power terminal 12 adopts a copper sheet.
The first PCB 13 and the second PCB 14 are isolated by using insulating glue; the first PCB 13 for leading out the gate terminal is slightly narrower, located above, and the second PCB 14 is located below, and is tightly attached to the front surface of the DBC substrate.
Referring to fig. 5, 6 and 7, the first PCB 13 and the second PCB 14 are 4 layers, each layer is provided with a first pad 7, a second pad 8 and a via 10, and the first layer of the first PCB 13 is provided with a third copper layer 9, and the layers are partially connected through the via 10.
A preparation method of a silicon carbide MOSFET chip bidirectional switch power module comprises the following steps:
S1, cleaning DBC and a copper base plate, printing nano silver soldering paste on corresponding positions of silicon carbide MOSFET chips on a DBC substrate, and attaching the silicon carbide MOSFET chips on the DBC substrate; printing a layer of nano silver soldering paste on the corresponding position of the 3 DBC substrates on the copper base plate in a steel screen printing mode, and attaching the DBC substrates on the nano silver soldering paste layer;
a schematic front view of a single DBC substrate is shown in fig. 1, a schematic front view of a 3-piece DBC substrate arranged on a copper plate is shown in fig. 2, and a schematic front view of a 3-piece DBC substrate is shown in fig. 3.
S2, placing the module printed with the nano silver soldering paste and completed with the patch into a vacuum sintering furnace, setting the temperature to be 25-300 ℃ and sintering for 1-2 hours;
S3, printing a layer of insulating glue on the second PCB at a corresponding position of the first PCB, attaching the first PCB to the second PCB, and welding PIN needles serving as driving terminals on the first PCB and the second PCB;
S4, taking out the module subjected to reflow soldering, printing a layer of insulating glue on a corresponding position of the second PCB on the DBC substrate, and attaching the second PCB on the insulating glue;
S5, completing wire bonding of the silicon carbide MOSFET chip to an electrode area of the DBC substrate and a corresponding position of the PCB; printing a layer of nano silver soldering paste on the corresponding position of the power terminal on the DBC substrate, placing the power terminal on the corresponding position, heating on a heating table at 25-300 ℃ for 1-2 h, and welding the terminal;
s6, placing the module with the terminal welded in a plastic packaging mould, and using epoxy resin for plastic packaging.
After the pouring sealant is prepared, the module is vacuumized and then is encapsulated, and the pouring sealant with the insulation strength meeting the insulation requirement, transparency, water resistance and other characteristics is adopted, such as the model 195 of the organic silicon pouring sealant.
According to the preparation method of the silicon carbide MOSFET chip bidirectional switch power module, nano sintered silver can be adopted as soldering paste, vacuum sintering is carried out according to the temperature curve of the nano sintered silver, the melting point after sintering is completed can reach 900 ℃, the welding void ratio is extremely low, and the requirements of commercial products on the chip void ratio of 2% and the DBC substrate void ratio of 5% are met.
In summary, the silicon carbide MOSFET chip bidirectional switch power module and the preparation method thereof are used for packaging silicon-based power electronic devices or wide bandgap semiconductor power electronic devices, and have the advantages of higher working frequency, better reliability, lower thermal resistance, good electrical performance, higher packaging integration level and greatly reduced size.
The above is only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited by this, and any modification made on the basis of the technical scheme according to the technical idea of the present invention falls within the protection scope of the claims of the present invention.

Claims (7)

1. The silicon carbide MOSFET chip bidirectional switch power module is characterized by comprising a copper base plate, wherein DBC substrates are transversely arranged on the copper base plate, a first PCB (13) and a second PCB (14) are arranged on the DBC substrates in a superimposed mode, a driving terminal (11) is led out from the first PCB (13) and the second PCB (14) in a wire bonding mode, the driving terminal (11) comprises a grid terminal and a source terminal, the first PCB (13) is used for leading out the grid terminal, the second PCB (14) is used for leading out the source terminal, the DBC substrates comprise three DBC substrates, the power loops of each DBC substrate are led out through the power terminals (12), the drains of silicon carbide MOSFET chips (6) arranged on all DBC substrates are connected to form 9 bidirectional switches, the front face of each DBC substrate is provided with a first copper layer (1), the back face of each DBC substrate is provided with a second copper layer (2), and three metal substrates are arranged on the first copper layer (1); the copper bottom plate is correspondingly provided with a first screw hole (3), a second screw hole (4) and a third screw hole (5);
Each bidirectional switch comprises 4 silicon carbide MOSFET chips (6), the 4 silicon carbide MOSFET chips (6) are arranged on a DBC substrate, two groups of silicon carbide MOSFET chips are connected in parallel in pairs to realize common drain connection, and sources of the two groups of silicon carbide MOSFET chips are led out to corresponding source substrates (15) through wire bonding.
2. The silicon carbide MOSFET chip bi-directional switch power module of claim 1, wherein the drive terminals (11) are PIN PINs, including 24, and the power terminals (12) are copper sheets, including 6.
3. The silicon carbide MOSFET chip bi-directional switch power module of claim 1, wherein the first PCB (13) and the second PCB (14) are connected using an insulating glue.
4. The silicon carbide MOSFET chip bi-directional switching power module of claim 1, wherein the first PCB (13) and the second PCB (14) are each of a 4-layer structure with a layer-to-layer partial connection through the via (10).
5. A method of making the silicon carbide MOSFET die bi-directional switching power module of claim 1, comprising the steps of:
s1, printing a layer of nano silver soldering paste at corresponding positions on a DBC substrate and a copper base plate respectively, and attaching a silicon carbide MOSFET chip on the DBC substrate; attaching a DBC substrate to a copper base plate;
S2, printing nano silver soldering paste in the step S1 and completing vacuum sintering of a copper bottom plate of the patch;
s3, attaching the first PCB to the second PCB, and respectively welding PIN needles serving as driving terminals on the first PCB and the second PCB;
s4, taking out the first PCB and the second PCB which are welded in the step S3, printing a layer of insulating glue on the DBC subjected to vacuum sintering treatment in the step S2, and attaching the second PCB on the insulating glue;
S5, printing a layer of nano silver soldering paste on the DBC substrate, placing a power terminal at the nano silver soldering paste, and welding to finish wire bonding from the silicon carbide MOSFET chip to the DBC electrode area and corresponding positions of the first PCB and the second PCB;
And S6, using epoxy resin to carry out plastic package on the DBC substrate with the terminal welded in the step S5, and obtaining the silicon carbide MOSFET chip bidirectional switch power module.
6. The method according to claim 5, wherein in step S2, the vacuum sintering is performed at a temperature of 25 to 300℃for a time of 1 to 2 hours.
7. The method according to claim 5, wherein in step S6, the vacuum-pumping treatment is performed on the molded module, and then the potting is performed by using a potting adhesive.
CN202110302888.4A 2021-03-22 2021-03-22 Silicon carbide MOSFET chip bidirectional switch power module and preparation method thereof Active CN113097159B (en)

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