CN213718312U - Paster power module - Google Patents
Paster power module Download PDFInfo
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- CN213718312U CN213718312U CN202120050217.9U CN202120050217U CN213718312U CN 213718312 U CN213718312 U CN 213718312U CN 202120050217 U CN202120050217 U CN 202120050217U CN 213718312 U CN213718312 U CN 213718312U
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- circuit board
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- board frame
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Abstract
A patch power module comprises a circuit board frame provided with two or more groups of through hole welding pads, wherein the two or more groups of through hole welding pads are provided with welding pads on two sides of the circuit board frame; the circuit board frame is welded on the ceramic-based circuit board through the two or more groups of through hole pads; the circuit board further comprises two or more than two groups of MOS tubes, the two or more than two groups of MOS tubes are welded on the circuit layer of the ceramic-based circuit board, and the input and output pins are correspondingly connected with the two or more than two groups of through hole pads on the circuit board frame and are positioned in the space surrounded by the circuit board frame. Arranging an external pin required by a patch for the power module by arranging a circuit board frame; a power module with simplified process is simply and reliably realized.
Description
Technical Field
The utility model relates to a power device module for power product or motor product. The ceramic-based circuit board with good heat dissipation effect is adopted.
Background
With the advance of technology, power tubes are used in electronic products in large quantities. MOS tube and IGBT are commonly used; the MOS transistor is also called as a field effect transistor; it has many uses, mainly used as switch component. The IGBT is another power tube, also called an insulated gate bipolar thyristor, and is mainly used as a switch component.
MOS transistors and IGBTs are used in a large number of electronic products such as frequency-variable home appliances, power supplies, motor controls, and inverters.
The ceramic-based circuit board is a special process board in which copper foil is directly bonded to the surface of a ceramic substrate at high temperature. The prepared composite substrate has excellent electrical insulation performance and high heat conduction characteristic. Comprises a ceramic substrate and a circuit layer.
The method is a new direction for manufacturing a power module of an MOS (metal oxide semiconductor) transistor or an IGBT (insulated gate bipolar transistor) by adopting a ceramic-based circuit board; the packaging cost of the conventional power module is high; and is not flexible to manufacture.
In the process of manufacturing a power module by a simplified process, how to install pins on the module is one of difficulties; the welding needs to be finished, and the cost is superior.
Disclosure of Invention
In view of the above problems, the present invention aims to provide a power module of a ceramic-based circuit board, which adopts a mature process, easily controls the regularity of a pin device, and increases the production consistency; and increases the production efficiency.
In order to realize the technical purpose, the utility model discloses a scheme is: a patch power module comprises a circuit board frame provided with two or more groups of through hole welding pads, wherein the two or more groups of through hole welding pads are provided with welding pads on two sides of the circuit board frame; the circuit board is characterized by also comprising a ceramic-based circuit board, wherein the ceramic-based circuit board consists of a circuit layer and a ceramic base layer, two or more than two groups of bonding pads are distributed on the circuit layer of the ceramic-based circuit board, and the two or more than two groups of bonding pads correspond to two or more than two groups of through hole bonding pads on a circuit board frame; the circuit board frame is welded on the ceramic-based circuit board through a group of two or more than two through hole pads; the circuit board further comprises two or more than two groups of MOS tubes, the two or more than two groups of MOS tubes are welded on the circuit layer of the ceramic-based circuit board, and the input and output pins are correspondingly connected with the two or more than two groups of through hole pads on the circuit board frame and are positioned in the space surrounded by the circuit board frame. When the MOS tube wafer is adopted by the two or more than two MOS tubes, glue is dripped for reinforcement in the space surrounded by the circuit board frame.
Preferably, the ceramic-based circuit board used can be replaced with a metal-based circuit board. An aluminum substrate is commonly used in the metal-based circuit board; the aluminum substrate has a poor heat dissipation effect compared with a ceramic substrate, but has low cost.
The beneficial effects of this technical scheme are: the welding consistency of the pins can be increased when the power module adopting the MOS tube or the IGBT is produced; the workload is reduced, and the production cost is reduced; the preparation of the power module is facilitated, and the cost is reduced.
Drawings
Fig. 1 is a schematic cross-sectional view of a through-hole pad according to a first embodiment of the present invention.
Fig. 2 is a side view of a circuit board frame according to a first embodiment of the present invention.
FIG. 3 is a schematic view of a single ceramic-based circuit board according to one embodiment.
Fig. 4 is a schematic cross-sectional view of a patch power module applied to an electronic product.
Fig. 5 is a reference circuit diagram of a group of two or more MOS transistors in a three-phase motor driving circuit.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
As shown in fig. 1, which is a schematic cross-sectional view of a through-hole pad according to a first embodiment of the present invention, a patch power module includes a circuit board frame 1 having two or more sets of through-hole pads, and two or more sets of through-hole pads 11 having pads on both sides of the circuit board frame 1; the circuit board further comprises a ceramic-based circuit board 2, wherein the ceramic-based circuit board 2 consists of a circuit layer 21 and a ceramic base layer 22, two or more than two groups of bonding pads 211 are distributed on the circuit layer 21 of the ceramic-based circuit board 2, and the two or more than two groups of bonding pads 211 correspond to two or more than two groups of through hole bonding pads 11 on the circuit board frame 1; the circuit board frame 1 is soldered to the ceramic-based circuit board 2 through a set of two or more via pads 11.
Fig. 2 is a view of a power module circuit board frame side. The circuit board frame 1 is provided with two or more than two groups of through hole bonding pads 11, and the two or more than two groups of through hole bonding pads 11 are provided with bonding pads on two sides of the circuit board frame 1; the circuit board further comprises two or more than two groups of MOS tubes 3, the two or more than two groups of MOS tubes 3 are welded on the circuit layer 21 of the ceramic-based circuit board 2, and the input and output pins are correspondingly connected with the two or more than two groups of through hole bonding pads 11 on the circuit board frame 1 and are located in the space surrounded by the circuit board frame 1. When a group of two or more than two MOS tubes 3 uses the MOS tube wafer, glue is dripped into the space surrounded by the circuit board frame for reinforcement.
Fig. 3 is a schematic diagram of a single ceramic-based circuit board according to the first embodiment. A group of two or more MOS transistors 3 is soldered to the wiring layer 21 of the ceramic substrate circuit board 2.
Fig. 4 is a schematic cross-sectional view of a patch power module applied to an electronic product. The power module is soldered to the main circuit board 4 of the electronic product through a set of two or more via pads 11 on the circuit board frame 1.
As shown in fig. 5, a reference circuit diagram of a group of two or more MOS transistors in a three-phase motor driving circuit. The total number of the MOS tubes is six, and a three-phase driving circuit is formed.
The above, only do the preferred embodiment of the present invention, not used to limit the present invention, all the technical matters of the present invention should be included in the protection scope of the present invention for any slight modification, equivalent replacement and improvement of the above embodiments.
Claims (2)
1. A patch power module, characterized by: the circuit board comprises a circuit board frame provided with two or more groups of through hole welding pads, wherein the two or more groups of through hole welding pads are provided with welding pads on two sides of the circuit board frame; the circuit board is characterized by also comprising a ceramic-based circuit board, wherein the ceramic-based circuit board consists of a circuit layer and a ceramic base layer, two or more than two groups of bonding pads are distributed on the circuit layer of the ceramic-based circuit board, and the two or more than two groups of bonding pads correspond to two or more than two groups of through hole bonding pads on a circuit board frame; the circuit board frame is welded on the ceramic-based circuit board through a group of two or more than two through hole pads; the circuit board further comprises two or more than two groups of MOS tubes, the two or more than two groups of MOS tubes are welded on the circuit layer of the ceramic-based circuit board, and the input and output pins are correspondingly connected with the two or more than two groups of through hole pads on the circuit board frame and are positioned in the space surrounded by the circuit board frame.
2. A patch power module according to claim 1, characterized in that: the ceramic-based circuit board used can be replaced with a metal-based circuit board.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202120050217.9U CN213718312U (en) | 2021-01-09 | 2021-01-09 | Paster power module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202120050217.9U CN213718312U (en) | 2021-01-09 | 2021-01-09 | Paster power module |
Publications (1)
Publication Number | Publication Date |
---|---|
CN213718312U true CN213718312U (en) | 2021-07-16 |
Family
ID=76790365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202120050217.9U Active CN213718312U (en) | 2021-01-09 | 2021-01-09 | Paster power module |
Country Status (1)
Country | Link |
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CN (1) | CN213718312U (en) |
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2021
- 2021-01-09 CN CN202120050217.9U patent/CN213718312U/en active Active
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