CN212161822U - 功率mosfet器件 - Google Patents
功率mosfet器件 Download PDFInfo
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- CN212161822U CN212161822U CN202020573474.6U CN202020573474U CN212161822U CN 212161822 U CN212161822 U CN 212161822U CN 202020573474 U CN202020573474 U CN 202020573474U CN 212161822 U CN212161822 U CN 212161822U
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- mosfet device
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 8
- 239000000969 carrier Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
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CN202020573474.6U CN212161822U (zh) | 2020-04-17 | 2020-04-17 | 功率mosfet器件 |
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CN202020573474.6U CN212161822U (zh) | 2020-04-17 | 2020-04-17 | 功率mosfet器件 |
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CN212161822U true CN212161822U (zh) | 2020-12-15 |
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CN202020573474.6U Active CN212161822U (zh) | 2020-04-17 | 2020-04-17 | 功率mosfet器件 |
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CN (1) | CN212161822U (zh) |
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2020
- 2020-04-17 CN CN202020573474.6U patent/CN212161822U/zh active Active
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Effective date of registration: 20240205 Address after: 518000 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Patentee after: Shenzhen Hemeiyuan Technology Co.,Ltd. Country or region after: China Address before: Room 501, Building NW20, Suzhou Nano City, No. 99 Jinjihu Avenue, Suzhou Industrial Park, Suzhou City, Jiangsu Province, 215123 Patentee before: SUZHOU SILIKRON SEMICONDUCTOR TECHNOLOGY CO.,LTD. Country or region before: China |
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TR01 | Transfer of patent right |
Effective date of registration: 20240322 Address after: Room 306, Building 2, No.1 Qingshan Road, High tech Zone, Suzhou City, Jiangsu Province, 215100 Patentee after: New Silicon Microelectronics (Suzhou) Co.,Ltd. Country or region after: China Address before: 518000 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Patentee before: Shenzhen Hemeiyuan Technology Co.,Ltd. Country or region before: China |
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TR01 | Transfer of patent right |