CN211127734U - Millimeter wave miniaturized power amplification synthesis structure - Google Patents
Millimeter wave miniaturized power amplification synthesis structure Download PDFInfo
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- CN211127734U CN211127734U CN202020311761.XU CN202020311761U CN211127734U CN 211127734 U CN211127734 U CN 211127734U CN 202020311761 U CN202020311761 U CN 202020311761U CN 211127734 U CN211127734 U CN 211127734U
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Abstract
The utility model discloses a miniaturized power amplification synthetic structure of millimeter wave has solved current circuit level power amplification synthetic circuit and can satisfy the system requirement on the technical indicator, but with high costs, bulky, the module is heavy, is difficult to satisfy the problem of the miniaturized demand of system output high power. The utility model discloses a ware, power amplifier, merit that connect gradually close ware, microstrip waveguide transition structure and circulator. The utility model has the advantages of output capacity is high, small, with low costs, satisfy the miniaturized requirement of module.
Description
Technical Field
The utility model relates to a power synthesis technical field, concretely relates to miniaturized power amplification synthetic structure of millimeter wave.
Background
In microwave millimeter wave communication and radar systems, in recent years, the output power of a single solid-state power amplifier chip is limited by the characteristics of semiconductor materials and processing technology and cannot meet the increasing requirements of the system on the output power, and the adoption of a microwave power synthesis technology is an effective solution.
compared with a solid-state power amplifier adopting a separation element, the solid-state power amplifier based on the MMIC has the advantages of relatively low cost, high repeated production efficiency, small volume, light weight, stability, reliability and the like.
at present, millimeter wave power synthesis circuit design and planar circuit power synthesis mainly have three forms, namely, ③ bridge type, in which ③ millimeter wave band must use ③ waveguide bridge and miniaturization is difficult, ③ chain type, in which ③ weak coupling mode is adopted, processing is difficult to realize after ③ plurality of stages, the higher the frequency of the millimeter wave band is, the more the limit of processing precision is, ③ one-in-one-multiple-path type, in which the size and the bearing power of ③ circuit are usually limited by the size of ③ branch structure such as ③ Wilkinson power divider, ③ radial line or ③ tapered waveguide structure in ③ multi-path parallel mode, and the Wilkinson two-path power combiner is the most basic and most common power synthesis three-port unit.
Although the existing circuit-level power amplification synthesis circuit can meet the system requirements in technical indexes, the circuit-level power amplification synthesis circuit is high in cost, large in size and heavy in module, and the requirement for high-power miniaturization of system output is difficult to meet. The utility model discloses aim at solving and satisfy simultaneously that output is high, small and realize millimeter wave power amplification synthetic circuit under the condition of control cost again.
SUMMERY OF THE UTILITY MODEL
The utility model discloses the technical problem that will solve is: although the existing circuit-level power amplification synthesis circuit can meet the system requirements in technical indexes, the circuit-level power amplification synthesis circuit is high in cost, large in size and heavy in module, and the requirement for high-power miniaturization of system output is difficult to meet.
The utility model provides a miniaturized power amplification composite structure of millimeter wave of solving above-mentioned problem.
The utility model discloses a following technical scheme realizes:
A millimeter wave miniaturized power amplification and synthesis structure comprises a power divider, a power amplifier, a power combiner, a microstrip waveguide transition structure and a circulator which are sequentially connected.
The utility model discloses in, millimeter wave signal gets into the merit and divides the ware to fall into two tunnel or multichannel and the same amplitude cophase signal and gets into two the same or a plurality of MMIC power amplifier respectively and enlarge, and the synthetic output of reentrant merit closes the ware, advances through microstrip waveguide transition structure go into the circulator, the antenna radiation who exports and is connected with it goes, the utility model discloses a mode that directly converts to the waveguide after the power synthesis has output capacity height, small, characteristics with low costs.
The utility model discloses the miniaturized power amplification synthetic structure of preferred millimeter wave, the ware is divided to the merit is two way at least merits.
The utility model discloses preferred a miniaturized power amplification composite structure of millimeter wave, power amplifier is two at least.
The utility model discloses preferred a miniaturized power amplification synthetic structure of millimeter wave, the merit closes the ware for two way at least merits closes the ware.
The utility model discloses preferred a miniaturized power amplification synthetic structure of millimeter wave, microstrip waveguide transition structure includes coaxial probe, coaxial probe inserts waveguide E face, utilizes the transmission of the signal of accomplishing that the electricity between probe and the waveguide is coupled. By means of the probe, the airtightness of the whole assembly can be guaranteed.
The utility model discloses preferred a miniaturized power amplification integrated configuration of millimeter wave, the circulator is T type circulator.
The utility model discloses preferred miniaturized power amplification integrated configuration of millimeter wave, power amplifier is GaNMMIC power amplifier, and every power amplifier's chip is the dual voltage power supply, and positive and negative electricity is equipped with sequential circuit, and it is positive after adding the elder generation, and outage is positive after the elder generation is burden to the protection chip is equipped with protective measures such as excessive pressure overcurrent excess temperature warning simultaneously. The MMIC power amplifier has small chip size and large heat quantity, in order to better radiate heat, special alloy with high heat conductivity and low thermal expansion coefficient is adopted as a carrier, a bare chip is welded on the special alloy carrier by adopting an eutectic welding process technology to carry out rapid heat diffusion, and then the special alloy is bonded and fixed on a metal cavity through a thin layer of high heat conductivity material, so that good heat radiation is realized, and the MMIC power amplifier is connected by adopting a gold wire bonding process to reduce power loss.
The utility model discloses the miniaturized power amplification synthetic structure of a preferred millimeter wave, the ware is divided to the merit is Wilkinson merit, the merit is divided the ware and is based on the film technology, has reduced the size that the ware was divided to the merit/merit closes the ware greatly.
The utility model discloses preferred miniaturized power amplification integrated configuration of millimeter wave still includes the high frequency board, the high frequency board material adopts the soft substrate of RT5880 high frequency.
The millimeter wave signal enters the planar microstrip power divider and is divided into two or more paths of same-amplitude in-phase signals, the two or more paths of same-amplitude in-phase signals respectively enter two or more MMIC power amplifiers for amplification, then enter the power combiner for synthesis and output, enter the circulator through the microstrip waveguide transition structure, and are output to the antenna connected with the circulator to be radiated. The MMIC power chip selects a domestic GaN power amplifier chip, the saturation output power is 43dBm, the synthetic output power of two paths is more than or equal to 45dBm, the loss of a circulator and a waveguide at the rear stage is calculated according to 1dB, and the final output of the circuit can reach 44 dBm. The circuit adopts RT5880 high frequency soft substrate, the dielectric constant is 2.2, the thickness is 0.254mm, easy to process and dielectric loss are little, this circuit structure is often used in the microwave millimeter wave emission extension transmission branch circuit final drive amplifier circuit.
The utility model discloses following beneficial effect has:
The utility model discloses a mode that directly converts to the waveguide after the power synthesis has output capacity height, small, characteristics with low costs, and the millimeter wave power synthesis circuit output that this scheme of adoption realized can reach 25W.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. In the drawings:
Fig. 1 is a schematic block diagram of the present invention.
FIG. 2 shows the ADS simulation model of the present invention.
Fig. 3 is a diagram of the ADS simulation result of the present invention.
Fig. 4 shows the HFSS simulation model of the power divider of the present invention.
Fig. 5 is a HFSS simulation result diagram of the power divider of the present invention.
Fig. 6 is an HFSS simulation diagram of the transition structure of microstrip waveguide according to the present invention.
Fig. 7 is a HFSS simulation result diagram of the microstrip waveguide transition structure of the present invention.
Detailed Description
To make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the following examples and drawings, and the exemplary embodiments and descriptions thereof of the present invention are only used for explaining the present invention, and are not intended as limitations of the present invention.
As shown in fig. 1 and fig. 2, a millimeter wave miniaturized power amplification and synthesis structure includes a power divider, a power amplifier, a power combiner, a microstrip waveguide transition structure, and a circulator, which are connected in sequence.
The utility model discloses in, millimeter wave signal gets into the merit and divides the ware to fall into two tunnel or multichannel and amplitude in phase signal and get into two the same or a plurality of MMIC power amplifier respectively and enlarge, and the synthetic output of reentrant merit closes the ware, advances through microstrip waveguide transition structure go into the circulator, the antenna radiation who exports and be connected with it goes, and fig. 2 and fig. 3 are the utility model discloses an ADS simulation model and simulation result, this structure can be used to microwave millimeter wave transmission extension transmission branch line final drive amplifier circuit.
The power divider is a two-path power divider, the number of the power amplifiers is at least two, the power combiner is at least two-path power combiner, the power divider is a Wilkinson power divider, the power divider is based on a thin film process, the size of the power divider/power combiner is greatly reduced, as can be seen from simulation models and results in fig. 4 and 5, the result display accords with circuit application indexes, S11 reaches-33 dB near the center frequency of 35GHz, and the loss is less than 0.5 dB.
The transition from waveguide to microstrip is the interface of the launch channel with the circulator. During transmission, the transition attenuation from the waveguide to the microstrip can cause the loss of transmission output power, and during receiving, the noise coefficient is directly introduced. Therefore, the waveguide to microstrip transition requires small insertion loss. To this end, the microstrip waveguide transition structure of the present invention includes a coaxial probe inserted into the E-plane of the waveguide, and the transmission of signals is accomplished by the electrical coupling between the probe and the waveguide. The air tightness of the whole assembly can be ensured by the mode of the probe, and the insertion loss introduced by the transition unit is less than 0.5dB and meets the requirement as can be seen from the simulation model and the simulation result of the figures 6 and 7.
The circulator is a T-shaped circulator.
The power amplifier is a GaN MMIC power amplifier, a chip of each power amplifier supplies power for double voltages, a time sequence circuit is arranged on positive and negative electricity, the power-up is negative firstly and then positive, the power-off is positive firstly and then negative, so as to protect the chip, and meanwhile, protective measures such as overvoltage, overcurrent and overtemperature alarm are arranged. The MMIC power amplifier has small chip size and large heat quantity, in order to better radiate heat, special alloy with high heat conductivity and low thermal expansion coefficient is adopted as a carrier, a bare chip is welded on the special alloy carrier by adopting an eutectic welding process technology to carry out rapid heat diffusion, and then the special alloy is bonded and fixed on a metal cavity through a thin layer of high heat conductivity material, so that good heat radiation is realized, and the MMIC power amplifier is connected by adopting a gold wire bonding process to reduce power loss.
The utility model discloses still include the high frequency board, the high frequency board material adopts the soft substrate of RT5880 high frequency.
The millimeter wave signal enters the planar microstrip power divider and is divided into two or more paths of same-amplitude in-phase signals, the two or more paths of same-amplitude in-phase signals respectively enter two or more MMIC power amplifiers for amplification, then enter the power combiner for synthesis and output, enter the circulator through the microstrip waveguide transition structure, and are output to the antenna connected with the circulator to be radiated. The MMIC power chip selects a domestic GaN power amplifier chip, the saturation output power is 43dBm, the synthetic output power of two paths is more than or equal to 45dBm, the loss of a circulator and a waveguide at the rear stage is calculated according to 1dB, and the final output of the circuit can reach 44 dBm. The circuit adopts RT5880 high frequency soft substrate, the dielectric constant is 2.2, the thickness is 0.254mm, easy to process and dielectric loss are little, this circuit structure is often used in the microwave millimeter wave emission extension transmission branch circuit final drive amplifier circuit.
The above-mentioned embodiments, further detailed description of the objects, technical solutions and advantages of the present invention, it should be understood that the above description is only the embodiments of the present invention, and is not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. A millimeter wave miniaturized power amplification and synthesis structure is characterized by comprising a power divider, a power amplifier, a power combiner, a microstrip waveguide transition structure and a circulator which are sequentially connected.
2. The millimeter wave miniaturized power amplification synthesis structure of claim 1, wherein the power divider is at least a two-way power divider.
3. A millimeter wave miniaturized power amplification combining structure as claimed in claim 1 or 2, wherein said power amplifiers are at least two.
4. The millimeter wave miniaturized power amplification and synthesis structure according to claim 1 or 2, wherein the power combiner is at least a two-way power combiner.
5. A millimeter wave miniaturized power amplification composite structure as claimed in claim 1 or 2, wherein said microstrip waveguide transition structure comprises a coaxial probe inserted into the waveguide E-plane.
6. A millimeter wave miniaturized power amplifying composite structure according to claim 1 or 2, wherein said circulator is a T-shaped circulator.
7. A millimeter wave miniaturized power amplification combining structure as claimed in claim 1 or 2, wherein said power amplifier is a GaN MMIC power amplifier.
8. The millimeter wave miniaturized power amplification and synthesis structure as claimed in claim 1 or 2, wherein the power divider is a WilKinson power divider.
9. A millimeter wave miniaturized power amplifying composite structure according to claim 1 or 2, characterized by further comprising a high frequency board, wherein the material of said high frequency board is RT5880 high frequency soft substrate.
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| CN202020311761.XU CN211127734U (en) | 2020-03-13 | 2020-03-13 | Millimeter wave miniaturized power amplification synthesis structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113078882A (en) * | 2021-03-31 | 2021-07-06 | 绵阳天赫微波科技有限公司 | 18-40GHz power amplifier module |
| CN113242031A (en) * | 2021-03-31 | 2021-08-10 | 西安空间无线电技术研究所 | Device for improving utilization efficiency of pulse compression energy |
| CN115765701A (en) * | 2022-11-24 | 2023-03-07 | 优镓科技(苏州)有限公司 | Time sequence control circuit and gallium nitride power amplifier module |
-
2020
- 2020-03-13 CN CN202020311761.XU patent/CN211127734U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113078882A (en) * | 2021-03-31 | 2021-07-06 | 绵阳天赫微波科技有限公司 | 18-40GHz power amplifier module |
| CN113242031A (en) * | 2021-03-31 | 2021-08-10 | 西安空间无线电技术研究所 | Device for improving utilization efficiency of pulse compression energy |
| CN113242031B (en) * | 2021-03-31 | 2024-05-14 | 西安空间无线电技术研究所 | Device for improving pulse compression energy utilization efficiency |
| CN115765701A (en) * | 2022-11-24 | 2023-03-07 | 优镓科技(苏州)有限公司 | Time sequence control circuit and gallium nitride power amplifier module |
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