CN216903291U - Novel power amplifier - Google Patents
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- CN216903291U CN216903291U CN202122773234.8U CN202122773234U CN216903291U CN 216903291 U CN216903291 U CN 216903291U CN 202122773234 U CN202122773234 U CN 202122773234U CN 216903291 U CN216903291 U CN 216903291U
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Abstract
The novel power amplifier comprises a packaging box and an outer cover plate arranged at the top of the packaging box; a driving amplification module, a power distribution network module and a power synthesis network module are sequentially arranged in the packaging box from top to bottom; the radio frequency input connector is connected with the drive amplification module; the driving amplification module sends the signals processed by the amplifier to the power distribution network module and distributes the signals into a plurality of paths of signals, the plurality of paths of signals in the power distribution network module are respectively received by the power synthesis network module in a plurality of paths, amplified and then synthesized and output, and the radio frequency output connector is connected with the power synthesis network module; the multipath signals are respectively output from the radial direction of the power synthesis network module, and the multipath signal receiving is respectively received from the radial direction of the power distribution network module.
Description
Technical Field
The utility model relates to the technical field of communication, in particular to a 6-18 GHz 200W power amplifier.
Background
In recent years, with the rapid development of civil and military communication technology systems, more and more attention is paid to a solid-state power amplifier with reliable performance, ultra-wideband and high power. The traditional power amplifier is mainly realized by a vacuum electron tube and a traveling wave tube, but the traditional vacuum electron tube amplifier has the defects of heavy weight, huge volume, extremely high working voltage, short service life, poor reliability and the like, and the solid-state power amplifier is based on an integrated MMIC (monolithic microwave integrated circuit) and obtains high-power output by a power synthesis technology, has the characteristics of small volume, high reliability, long service life, convenient use and the like, and has incomparable advantages compared with the traditional vacuum electron tube. Various scientific research institutions and high-tech enterprises at home and abroad also invest more and more resources for research and development, various new technologies and new ideas are continuously emerging in recent years, and a plurality of ideas and problem solving methods are provided for the research and development of the ultra-wideband and high-power solid-state power amplifier.
The radial power synthesis technology has the characteristics of small insertion loss, no restriction of the synthesis path number by the rule of the traditional binary system, synthesis of any path number and wide working frequency, and can be widely applied to broadband high-power synthesis. However, the conventional 6-18 GHz radial power synthesis is generally based on a gradual change coaxial structure, the coaxial line is radially split into a plurality of parts, each part represents one power module, a power amplifier chip is mounted on the power module, and finally the power modules are newly combined into the coaxial structure. Although the working bandwidth of the structure can realize ultra-wideband work, the structure is not friendly to high-power heat dissipation due to the characteristic of a cylindrical structure; each module can not meet the boundary condition of an electromagnetic field, a testable unit can be formed only after the modules are combined, and an independent power module can not be tested independently, so that the test and the maintenance are extremely difficult; the chip mounted by each independent module is limited, and secondary power is integrated.
SUMMERY OF THE UTILITY MODEL
It is an object of the present invention to provide a novel power amplifier that solves some of the problems of the prior art by means of power splitting.
The purpose of the utility model is mainly realized by the following technical scheme:
the novel power amplifier comprises a packaging box and an outer cover plate arranged at the top of the packaging box; a driving amplification module, a power distribution network module and a power synthesis network module are sequentially arranged in the packaging box from top to bottom;
the radio frequency input connector is connected with the drive amplification module; the driving amplification module sends the signals processed by the amplifier to the power distribution network module and distributes the signals into a plurality of paths of signals, the plurality of paths of signals in the power distribution network module are respectively received by the power synthesis network module in a plurality of paths, amplified and synthesized and output, and the radio frequency output connector is connected with the power synthesis network module; the multipath signals are respectively output from the radial direction of the power synthesis network module, and the multipath signal reception is respectively received from the radial direction of the power distribution network module.
As a preferred technical scheme, the radio frequency input connector and the radio frequency output connector are both arranged on the side surface of the packaging box.
As a preferable technical scheme, the driving amplification module comprises a board-mounted structure body, an amplifier mounting cavity groove provided with an amplifier is arranged on the structure body, and the amplifier is connected with the radio frequency input connector and the power distribution network module through conductors.
As a preferred technical scheme, the power distribution network module comprises a double-ridge-like waveguide outer cavity and a cover plate; a conductor is arranged at the center of the quasi-double-ridge waveguide outer cavity, an annular quasi-double-ridge waveguide lower conductor step is arranged around the center of the quasi-double-ridge waveguide outer cavity, and the impedance transformation step is sealed by a cover plate to form a quasi-double-ridge waveguide cavity; a plurality of microstrip cavities are arranged in the outer cavity of the quasi-double-ridge waveguide around the circle center, and a quasi-double-ridge waveguide short circuit transformation section is arranged between the microstrip cavities and the lower conductor step of the quasi-double-ridge waveguide; the microwave medium substrate is arranged in the quasi-double-ridge waveguide short circuit transformation section and the micro-strip cavity.
As a preferred technical scheme, the power synthesis network module comprises a quasi-double-ridge waveguide outer cavity and a cover plate; a conductor is arranged at the center of the outer cavity of the quasi-double-ridge waveguide and is connected to a conductor and a radio frequency output connector which are arranged at the center of the power distribution network module;
an annular double-ridge-like waveguide lower conductor step is arranged around the center of the circle in the double-ridge-like waveguide outer cavity, and the impedance transformation step is sealed by the cover plate to form a double-ridge-like waveguide cavity; a plurality of microstrip cavities are arranged in the outer cavity of the quasi-double-ridge waveguide around the circle center, and a quasi-double-ridge waveguide short circuit transformation section is arranged between the microstrip cavities and the lower conductor step of the quasi-double-ridge waveguide; the microwave medium substrate is arranged in the quasi-double-ridge waveguide short circuit transformation section and the micro-strip cavity.
As a preferred technical scheme, an amplifier mounting cavity groove provided with an amplifier is also arranged in the quasi-double-ridge waveguide outer cavity of the power synthesis network module, and the amplifier mounting cavity groove is positioned in the quasi-double-ridge waveguide outer cavity; the amplifier is connected with the microwave medium substrate and is used for amplifying signals.
As a preferred technical scheme, the microwave medium substrate comprises an annular substrate short-circuit transition section and microstrip lines uniformly distributed on the substrate short-circuit transition section along the circumference.
As a preferred technical scheme, a plurality of upper and lower connecting conductors are respectively arranged between the power distribution synthesis network module and the power distribution network module, and one-to-one corresponding transmission of multiple paths of signals is completed.
As a preferred technical scheme, a conductor arranged at the center of the outer cavity of the quasi-double-ridge waveguide of the power synthesis network module is a combining probe, the part of the combining probe connected with the conductor at the center of the power distribution network module is positioned in the vertical direction, the part connected with the radio frequency output connector is positioned in the horizontal direction, the combining probe is in transition from the vertical direction to the horizontal direction, the inner side of the combining probe is in vertical transition, and the outer side of the combining probe is in chamfer transition; the radial section effect of the transverse part is square, the vertical part is composed of three structures with different shapes, the radial section effect is circular, circular and square from one end far away from the transverse part to one end connected with the transverse part, and the diameter of the circle in the middle is smaller than that of the circle in the previous part.
Compared with the prior art, the utility model has the following beneficial effects:
the utility model can realize the ultra-wideband and octave work: the power synthesis network can realize the full-band coverage work of 6-18 GHz;
the utility model can realize ultra-low insertion loss, and adopts a coaxial structure and a similar double-ridge waveguide step transformation structure to realize ultra-low insertion loss;
the utility model can realize convenient chip integration, directly converts the double-ridge waveguide step transformation structure into a microstrip line structure convenient for integration with the chip, and directly integrates with the chip;
the utility model can realize high-efficiency heat dissipation, converts the amplifier module needing heat dissipation into a plane heat dissipation structure, and can solve the problem of high-power heat dissipation by utilizing the traditional heat dissipation mode.
Based on the principle of the radial power distributor, the utility model can fundamentally solve the problems of high-power heat dissipation, non-testability and difficult assembly of the 6-18 GHz broadband. The power amplifier module is arranged on the lowest layer, and each amplifier module on the lower layer can be fed with a radio frequency signal to test amplitude and phase independently; the distribution network driving amplifying part is arranged on the upper layer of the power amplifier, the heat dissipation pressure of an upper layer circuit is small, and meanwhile, the driving amplifier can be integrated on the upper layer circuit, so that the single module gain of the amplifier is effectively improved; the upper layer circuit and the lower layer circuit are connected through the SMP connecting module, and the connecting module simultaneously enhances the structural strength of the amplifier. The utility model is based on radial power distribution, and can fundamentally solve the problems of high-power heat dissipation, non-testability and difficult assembly of the 6-18 GHz broadband. The power amplifier module is arranged on the lowest layer, and each amplifier module on the lower layer can be fed with a radio frequency signal to test amplitude and phase independently; the distribution network driving amplifying part is arranged on the upper layer of the power amplifier, the heat dissipation pressure of an upper layer circuit is small, and meanwhile, the driving amplifier can be integrated on the upper layer circuit, so that the single module gain of the amplifier is effectively improved; the upper layer circuit and the lower layer circuit are connected through the SMP connecting module, and the connecting module simultaneously enhances the structural strength of the amplifier.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the utility model and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the utility model and together with the description serve to explain the principles of the utility model. In the drawings:
FIG. 1 is an exploded view of the present invention;
FIG. 2 is a cross-sectional view of the present invention;
FIG. 3 is a schematic structural diagram of an SMP upper and lower connection module;
FIG. 4 is a schematic structural view of a shunt probe;
fig. 5 is a schematic structural view of a combining probe;
fig. 6 is a cross-sectional view of a combining probe;
FIG. 7 is a schematic structural diagram of a driving amplification module;
FIG. 8 is a schematic diagram of a power distribution network module;
FIG. 9 is a schematic diagram of a power combining network module;
FIG. 10 is a schematic view of the structure of the lower cover plate;
FIG. 11 is a schematic structural view of a square coaxial slot cover;
fig. 12 is a schematic structural view of a microstrip line in the driving amplification module;
FIG. 13 is a schematic structural diagram of an upper microwave dielectric substrate;
FIG. 14 is a schematic structural diagram of a lower microwave dielectric substrate;
fig. 15 is a schematic structural diagram of a microstrip line in the SMP upper and lower connection module;
fig. 16 shows the actual power test results of the example.
Wherein the reference numerals are as follows: 1-packaging box, 2-outer cover plate, 3-power management module, 4-drive amplification module, 5-power distribution network module, 6-power synthesis network module, 7-radio frequency input connector, 8-radio frequency output connector, 9-upper microwave dielectric substrate, 10-lower microwave dielectric substrate, 11-upper SMP double-negative commutator, 12-lower SMP double-negative commutator, 13-SMP up-and-down connection module, 14-upper cover plate, 15-lower cover plate, 16-amplifier installation cavity groove, 17-microstrip cavity groove, 18-microstrip line, 19-coaxial square groove, 20-coaxial square groove cover, 21-amplifier installation cavity groove, 22-combination probe, 23-shunt probe, 24-type double-waveguide ridge lower conductor step I, 25-class double-ridge waveguide lower conductor step II, 26-class double-ridge waveguide lower conductor step III, 27-upper-layer class double-ridge waveguide outer cavity, 28-lower-layer class double-ridge waveguide outer cavity, 29-class double-ridge waveguide short circuit transformation section, 30-coaxial switching inner conductor, 31-impedance transformation step and 32-substrate short circuit transition section.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Examples
As shown in FIGS. 1-2, the novel power amplifier comprises a package box and an outer cover plate arranged on the top of the package box. The packaging box is used for accommodating the electronic components.
The packaging box is internally provided with a power management module, a driving amplification module, a power distribution network module and a power synthesis network module from top to bottom in sequence. The power management module supplies power to the power utilization elements of the amplifier.
The radio frequency input connector is connected with the drive amplification module; the driving amplification module sends the signals processed by the amplifier to the power distribution and distribution network module and distributes the signals into a plurality of paths of signals, the signals in the plurality of paths are respectively and correspondingly sent to the power synthesis network module to be received, amplified, synthesized and output, and the radio frequency output connector is connected with the power synthesis network module. The radio frequency input connector and the radio frequency output connector respectively penetrate out of two opposite side surfaces of the packaging box.
In this embodiment, the driving amplifier module, the power distribution network module, and the power combining network module are all designed autonomously, and the structures thereof are described below one by one.
As shown in fig. 7, the driving amplification module includes a structural body close to a disk shape, and the structural body is provided with an amplifier mounting cavity and a microstrip cavity. In this embodiment, for the convenience of connection, the microstrip cavity groove is divided into two sections, and the amplifier installation cavity groove is located in the two sections of microstrip cavity grooves. An amplifier is arranged in the amplifier mounting cavity groove, and a microstrip line is arranged in the microstrip cavity groove. Since the microstrip cavity is divided into two sections, the corresponding microstrip line in the microstrip cavity is also divided into two sections, as shown in fig. 12. The input end and the output end of the amplifier are respectively connected with two sections of microstrip lines, one section of microstrip line is connected with the radio frequency input connector, and the other section of microstrip line is connected to the power distribution network module through the shunt probe. The structure of the shunt probe is shown in fig. 4. On the structure body of the driving amplification module, steps of rising steps are formed from the bottom of the amplifier installation cavity groove to the bottoms of the two sections of microstrip cavity grooves.
As shown in fig. 8, the power distribution network module includes an upper cover plate and an upper double-ridge-like waveguide outer cavity. The upper layer type double-ridge waveguide outer cavity is internally provided with a cavity, the top surface of the cavity is provided with a circular opening, and the upper layer cover plate seals the circular opening at the top of the upper layer type double-ridge waveguide outer cavity.
The upper cover plate is integrally formed at the bottom of the structure body of the driving amplification module; a hole is formed in the center of the upper layer cover plate for a shunt probe for coaxial switching to penetrate through, and the hole is a reducing hole, so that an impedance transformation step with a step-up function is formed from the center of the circle from inside to outside.
A circular opening is formed in the center of the upper-layer double-ridge waveguide outer cavity, a coaxial switching inner conductor is arranged at the bottom of the upper-layer double-ridge waveguide outer cavity, an annular impedance transformation step which is capable of changing the step in a lifting mode from outside to inside is arranged on the coaxial switching inner conductor, and the impedance transformation step extends into the inner cavity of the upper-layer double-ridge waveguide outer cavity from the circular opening. An annular step-shaped similar double-ridge waveguide lower conductor step I, a similar double-ridge waveguide lower conductor step II and a similar double-ridge waveguide lower conductor step III are sequentially arranged at the circular opening of the bottom surface of the upper-layer similar double-ridge waveguide outer cavity from inside to outside. The center of the coaxial switching inner conductor is penetrated with a coaxial switching inner conductor feeder, the top of the coaxial switching inner conductor feeder is spliced with the shunt probe, and the bottom of the coaxial switching inner conductor feeder is spliced with the combiner probe.
In this embodiment, the upper-layer double-ridge-like waveguide cavity is formed by matching the impedance transformation step of the upper-layer cover plate with the lower conductor step of the double-ridge-like waveguide of the upper-layer double-ridge-like waveguide outer cavity.
In the upper layer double-ridge waveguide outer cavity, a plurality of micro-strip cavity grooves (50 ohm micro-strip cavity grooves) are uniformly arranged around the circle center, and an annular double-ridge waveguide short circuit transformation section is also arranged in the upper layer double-ridge waveguide outer cavity and is communicated with the micro-strip cavity grooves. An annular limiting wall is arranged between the quasi-double-ridge waveguide short circuit transformation section and the quasi-double-ridge waveguide lower conductor step III, and the inner annular surface of the microwave dielectric substrate is abutted against the annular limiting wall, so that the limitation of the microwave dielectric substrate is realized, and the contact short circuit is realized.
As a preferable mode, the quasi-double-ridge waveguide short-circuit transformation section adopts a microwave printed board technology, and the front conductor of the upper microwave dielectric substrate is connected to the ridge of the quasi-double-ridge waveguide in a through hole mode to realize the transformation of the ridge waveguide.
Specifically, as shown in fig. 13, the upper microwave dielectric substrate includes an annular substrate short-circuit transition section and microstrip lines (50 ohms) uniformly distributed on the substrate short-circuit transition section along the circumference. The 50 ohm microstrip line is positioned in the microstrip cavity groove. The microstrip cavity slot serves as a shield.
In this embodiment, the formed quasi-double-ridge waveguide cavity converts the coaxially converted electromagnetic field into a waveguide structure electromagnetic field, and then power distribution is multiplexed.
As shown in fig. 9, the power combining network module includes a lower cover plate and a lower quasi-double-ridge waveguide external cavity. The lower layer type double-ridge waveguide outer cavity is internally provided with a cavity, the top surface of the lower layer type double-ridge waveguide outer cavity is provided with a circular opening, and the lower layer cover plate seals the circular opening at the top of the lower layer type double-ridge waveguide outer cavity.
The circle center of the lower layer cover plate is provided with a hole for the combination probe to pass through, and the hole is a reducing hole, so that a step of reducing the impedance transformation is formed from the circle center from inside to outside.
A circular opening is formed in the center of the lower-layer type double-ridge waveguide outer cavity, and a gradually-rising annular step type double-ridge-waveguide lower conductor step I, a double-ridge-waveguide lower conductor step II and a double-ridge-waveguide lower conductor step III are sequentially arranged at the circular opening in the bottom surface of the lower-layer type double-ridge waveguide outer cavity from inside to outside.
The lower layer double-ridge-like waveguide cavity is formed by matching the impedance transformation step of the lower layer cover plate with the lower conductor step of the double-ridge-like waveguide of the lower layer double-ridge-like waveguide outer cavity.
In the lower layer double-ridge waveguide outer cavity, a plurality of micro-strip cavity grooves (50 ohm micro-strip cavity grooves) and amplifier mounting cavity grooves corresponding to the micro-strip cavity grooves are uniformly arranged around the circle center. In order to facilitate conductor connection, the micro-strip cavity groove of the lower layer similar double-ridge waveguide outer cavity is divided into two sections, and the amplifier installation cavity groove is positioned between the two sections of micro-strip cavity grooves corresponding to the amplifier installation cavity groove. And steps of ascending steps are formed from the bottom of the amplifier installation cavity groove to the bottom of the microstrip cavity groove. The micro-strip cavity groove is positioned at the periphery of the lower conductor step III of the quasi-double-ridge waveguide. An annular quasi-double-ridge waveguide short-circuit transformation section is also arranged in the outer cavity of the lower-layer quasi-double-ridge waveguide and is communicated with the micro-strip cavity groove. An annular limiting wall is arranged between the quasi-double-ridge waveguide short circuit transformation section and the quasi-double-ridge waveguide lower conductor step III, and the inner annular surface of the lower microwave dielectric substrate abuts against the annular limiting wall, so that the limitation of the lower microwave dielectric substrate is realized, and the contact short circuit is realized. Amplifier mounting cavity grooves are uniformly arranged in the lower-layer double-ridge waveguide outer cavity around the circle center, the amplifier mounting cavity grooves correspond to the micro-strip cavity grooves of the lower-layer double-ridge waveguide outer cavity one by one, and the circumference where the amplifier cavity grooves are located is located on the periphery of the circumference where the micro-strip cavity grooves are located. An amplifier is arranged in the groove of the amplifier mounting cavity.
As shown in fig. 14, the lower microwave dielectric substrate includes an annular substrate short-circuit transition section and microstrip lines (50 ohms) uniformly distributed on the substrate short-circuit transition section along the circumference, and the microstrip lines are divided into two sections for matching with the two sections of microstrip cavity slots.
The quasi-double-ridge waveguide short-circuit transformation section adopts a microwave printed board technology, and connects a front conductor of a microwave dielectric substrate (the same as the microwave dielectric substrate) to a ridge of the quasi-double-ridge waveguide in a through hole mode to realize the transformation of the ridge waveguide.
The bottom surface of the lower layer double-ridge waveguide outer cavity is provided with a coaxial square groove which is communicated with the circular opening. As shown in fig. 11, a coaxial square groove is formed in the groove, and the groove opening can be sealed to form a cavity for accommodating the combining probe. The structure of the combination probe is shown in fig. 5-6, the part connected with the shunt probe is located in the vertical direction, the part connected with the radio frequency output connector is located in the horizontal direction, the inner side of the combination probe is in vertical transition, and the outer side of the combination probe is in chamfer transition. The radial section effect of the transverse part is square, the vertical part is composed of three structures with different shapes, the radial section effect is circular, circular and square from one end far away from the transverse part to one end connected with the transverse part, and the diameter of the circle in the middle is smaller than that of the circle in the previous part. The combination probe in the traditional structure adopts the output of circular coaxial structure, and the delivery outlet direction will be followed the bottom surface output of amplifier, causes amplifier bottom surface area loss great from this, and this scheme is coaxial bending with the circle, considers mechanical realizability, adopts the rectangle coaxial line to replace the output interface, the processing of being convenient for, the field structure of original coaxial structure has also better reservation simultaneously. The middle involves impedance transformation from circular to rectangular coaxial.
Furthermore, the power distribution network module and the power synthesis network module are connected through a plurality of SMP up-down connection modules. SMP top and bottom connection modules are shown in fig. 3. The module is connected with the power distribution network module and the power network synthesis module; the input interface and the output interface adopt SMP design, and the microstrip line and the SMP are connected in a vertical transition way.
Specifically, the outer sides of the circumferences of the upper layer type double-ridge waveguide outer cavity and the lower layer type double-ridge waveguide outer cavity are respectively distributed with an upper layer SMP double-female commutator and a lower layer SMP double-female commutator around the circle center, and the number of the SMP double-female commutator corresponds to the number of the micro-strip cavity grooves one to one.
One end of the upper SMP double-negative adapter is correspondingly connected with the upper microwave dielectric substrate. One end of the lower SMP double-negative adapter is correspondingly connected with the lower microwave dielectric substrate.
The other end of the SMP double-female adaptor is connected to the SMP upper and lower connecting modules. The SMP upper and lower connection module includes a structural body, a microstrip cavity slot disposed in the structural body, and a microstrip line disposed in the microstrip cavity slot, and the microstrip line structure is shown in fig. 15. The microstrip line is connected with the SMP double-negative adapter on the upper layer.
In this embodiment, a signal is input from the radio frequency input connector, processed by the amplifier, sent to the power distribution network module, distributed into multiple paths, received and amplified by the power synthesis network module in multiple paths, and synthesized into one path for output.
As shown in fig. 16, the actual power test result of this embodiment shows that, in the frequency band range of 6 to 18GHz, the typical value of the power amplification saturation output power is 53.5dBm, and the high-end output power is about 52.5dBm, which achieves the design target.
The above-mentioned embodiments, objects, technical solutions and advantages of the present invention are further described in detail, it should be understood that the above-mentioned embodiments are only illustrative of the present invention and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and logical principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. The novel power amplifier is characterized by comprising a packaging box and an outer cover plate arranged at the top of the packaging box; a driving amplification module, a power distribution network module and a power synthesis network module are sequentially arranged in the packaging box from top to bottom;
the radio frequency input connector is connected with the drive amplification module; the driving amplification module sends the signals processed by the amplifier to the power distribution network module and distributes the signals into a plurality of paths of signals, the plurality of paths of signals in the power distribution network module are respectively received by the power synthesis network module in a plurality of paths, amplified and synthesized and output, and the radio frequency output connector is connected with the power synthesis network module; the multipath signals are respectively output from the radial direction of the power synthesis network module, and the multipath signal reception is respectively received from the radial direction of the power distribution network module.
2. The novel power amplifier of claim 1, wherein the rf input connector and the rf output connector are disposed on the sides of the enclosure.
3. The novel power amplifier of claim 2, wherein the driver amplifier module comprises a board-mounted structure having an amplifier mounting cavity in which the amplifier is mounted, the amplifier being connected to the rf input connector and the power distribution network module by conductors.
4. The novel power amplifier of claim 1, wherein the power distribution network module comprises a double ridge-like waveguide external cavity and a cover plate; a conductor is arranged at the center of the quasi-double-ridge waveguide outer cavity, an annular quasi-double-ridge waveguide lower conductor step is arranged around the center of the quasi-double-ridge waveguide outer cavity, and the impedance transformation step is sealed by a cover plate to form a quasi-double-ridge waveguide cavity; a plurality of microstrip cavities are further arranged in the outer cavity of the quasi-double-ridge waveguide around the circle center, and a quasi-double-ridge waveguide short circuit transformation section is arranged between each microstrip cavity and the lower conductor step of the quasi-double-ridge waveguide; the microwave medium substrate is arranged in the quasi-double-ridge waveguide short circuit transformation section and the micro-strip cavity.
5. The novel power amplifier of claim 1, wherein the power combining network module comprises a quasi-double-ridge waveguide external cavity and a cover plate; a conductor is arranged at the center of the outer cavity of the quasi-double-ridge waveguide and is connected to a conductor arranged at the center of the power distribution network module and a radio frequency output connector;
an annular double-ridge-like waveguide lower conductor step is arranged around the center of the circle in the double-ridge-like waveguide outer cavity, and the impedance transformation step is sealed by the cover plate to form a double-ridge-like waveguide cavity; a plurality of microstrip cavities are arranged in the outer cavity of the quasi-double-ridge waveguide around the circle center, and a quasi-double-ridge waveguide short circuit transformation section is arranged between the microstrip cavities and the lower conductor step of the quasi-double-ridge waveguide; the microwave medium substrate is arranged in the quasi-double-ridge waveguide short circuit transformation section and the micro-strip cavity.
6. The novel power amplifier according to claim 5, wherein an amplifier mounting cavity groove for mounting the amplifier is further provided in the quasi-double-ridge waveguide outer cavity of the power combining network module, and the amplifier mounting cavity groove is located in the quasi-double-ridge waveguide outer cavity; the amplifier is connected with the microwave medium substrate and is used for amplifying signals.
7. The novel power amplifier according to any one of claims 4-6, wherein the microwave dielectric substrate comprises an annular substrate short-circuit transition section and microstrip lines uniformly distributed on the substrate short-circuit transition section along the circumference.
8. The novel power amplifier of claim 1, wherein a plurality of upper and lower connecting conductors are respectively disposed between the power distribution combining network module and the power distribution network module to achieve one-to-one transmission of multiple signals.
9. The novel power amplifier of claim 5, wherein the conductor disposed at the center of the external cavity of the quasi-double-ridge waveguide of the power combining network module is a combining probe, the part of the combining probe connected with the conductor at the center of the power distribution network module is located in the vertical direction, the part connected with the radio frequency output connector is located in the horizontal direction, and the combining probe is in transition from the vertical direction to the horizontal direction, the inner side is vertical transition, and the outer side is chamfer transition; the radial section effect of the transverse part is square, the vertical part is composed of three structures with different shapes, the radial section effect is circular, circular and square from one end far away from the transverse part to one end connected with the transverse part, and the diameter of the circle in the middle is smaller than that of the circle in the previous part.
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| CN202122773234.8U CN216903291U (en) | 2021-11-12 | 2021-11-12 | Novel power amplifier |
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| CN202122773234.8U CN216903291U (en) | 2021-11-12 | 2021-11-12 | Novel power amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113991273A (en) * | 2021-11-12 | 2022-01-28 | 成都浩翼创想科技有限公司 | Novel power amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113991273A (en) * | 2021-11-12 | 2022-01-28 | 成都浩翼创想科技有限公司 | Novel power amplifier |
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